KR20000065390A - Method for removing residue according for manufacturing process of semiconductor device - Google Patents
Method for removing residue according for manufacturing process of semiconductor device Download PDFInfo
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- KR20000065390A KR20000065390A KR1019990011614A KR19990011614A KR20000065390A KR 20000065390 A KR20000065390 A KR 20000065390A KR 1019990011614 A KR1019990011614 A KR 1019990011614A KR 19990011614 A KR19990011614 A KR 19990011614A KR 20000065390 A KR20000065390 A KR 20000065390A
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- South Korea
- Prior art keywords
- pattern
- photoresist
- light blocking
- foreign
- foreign substance
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 16
- 230000000903 blocking effect Effects 0.000 claims abstract description 13
- 239000010453 quartz Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000011651 chromium Substances 0.000 claims description 16
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 13
- 229910052804 chromium Inorganic materials 0.000 claims description 13
- 238000001312 dry etching Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 12
- 238000000206 photolithography Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
본 발명은 위상 반전 마스크에 관한 것으로, 특히, 전자 빔 묘화에 따른 차광막 재료인 크롬 이물질을 손쉽게 제거하는데 적당한 반도체 소자 제조공정에 따른 이물질 제거방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a phase reversal mask, and more particularly, to a method for removing foreign matters according to a semiconductor device manufacturing process suitable for easily removing chromium foreign matter, which is a light shielding film material caused by electron beam writing.
이하, 첨부된 도면을 참조하여 종래 기술에 따른 반도체 소자 제조공정에 따른 이물질 제거방법을 설명하기로 한다.Hereinafter, a method for removing foreign substances in the semiconductor device manufacturing process according to the prior art will be described with reference to the accompanying drawings.
도 1a 내지 1e는 종래 기술에 따른 반도체 소자 제조공정에 따른 이물질 제거방법을 설명하기 위한 공정단면도이다.1A to 1E are cross-sectional views illustrating a method of removing foreign substances in a semiconductor device manufacturing process according to the related art.
도 1a에 도시한 바와 같이, 석영 기판(11)상에 MoSiN을 이용한 사진 식각 공정으로 위상 반전 패턴(12)을 형성하고, 상기 위상 반전 패턴(11)상에 차광 물질을 도포한 후, 패터닝하여 차광 패턴(13)을 형성한다.As shown in FIG. 1A, a phase inversion pattern 12 is formed on a quartz substrate 11 by a photolithography process using MoSiN, a light shielding material is coated on the phase inversion pattern 11, and then patterned. The light shielding pattern 13 is formed.
이때, 상기 위상 반전 패턴(12) 및 차광 패턴(13)은 포토레지스트를 이용한 사진 식각 공정을 이용하여 형성한다.In this case, the phase reversal pattern 12 and the light blocking pattern 13 are formed using a photolithography process using a photoresist.
상기 차광 패턴(13)의 물질은 통상 크롬(Cr)을 적용한다.The material of the light shielding pattern 13 generally applies chromium (Cr).
이와 같이, 두 번의 사진 식각 공정을 이용하여 위상 반전 패턴(12) 및 차광 패턴(13)을 형성함에 있어서, 차광 패턴(13)을 형성하기 위한 사진 식각 공정시, 포토레지스트상에 이물질이 형성되었음에도 불구하고, 노광 및 현상 공정을 수행하게 되면, 도 1a에 도시한 바와 같이, 원하지 않은 부분에 크롬 이물질(14)이 발생하는 경우가 생기게 된다.As described above, in forming the phase inversion pattern 12 and the light shielding pattern 13 by using two photolithography processes, even when foreign matter is formed on the photoresist during the photolithography process for forming the light shielding pattern 13, Nevertheless, when the exposure and development processes are performed, as shown in FIG. 1A, chromium foreign matter 14 is generated in an unwanted portion.
따라서, 도 1b에 도시한 바와 같이, 상기 크롬 이물질(14)을 포함한 전면에 다시 한번 포토레지스트(15)를 도포한 후, 도 1c에 도시한 바와 같이, 상기 차광 패턴(13)을 형성할 때의 동일한 패턴대로 노광하고, 도 1d에 도시한 바와 같이 현상 공정을 진행한다.Therefore, as shown in FIG. 1B, when the photoresist 15 is once again applied to the entire surface including the chromium foreign material 14, the light shielding pattern 13 is formed as shown in FIG. 1C. It exposes according to the same pattern of and develops a process, as shown in FIG. 1D.
이후, 도 1e에 도시한 바와 같이, 원하지 않은 부분에 발생된 크롬 이물질(14)을 습식식각 공정을 통해 제거한다.Thereafter, as illustrated in FIG. 1E, the chromium foreign matter 14 generated in the unwanted portion is removed through a wet etching process.
이후, 상기 포토레지스트(15)를 제거하게 되면, PSM(Phase Shift Mask)제조 공정이 완료된다.Subsequently, when the photoresist 15 is removed, a PSM manufacturing process is completed.
그러나 상기와 같은 종래 반도체 소자 제조공정에 따른 이물질 제거방법은 다음과 같은 문제점이 있었다.However, the foreign material removal method according to the conventional semiconductor device manufacturing process as described above has the following problems.
이물질을 제거하기 위해 이물질이 형성된 부분을 포함하여 형성되지 않은 부분까지도 노광 및 현상 공정을 또 한번 진행하여야 하므로 노광에 소요되는 시간이 많이 걸린다.In order to remove the foreign matter, even the portion not formed, including the portion in which the foreign matter is formed, the exposure and development process must be carried out again, so it takes a long time for exposure.
또한, 포토레지스트와 위상 패턴간의 접착력에 문제가 발생하여 포토레지스트 현상시 레지스트 리피팅(repeating) 현상에 의해 차광 역할을 해야 하는 차광 패턴이 떨어져 나가는 문제가 발생하여 실제로 마스크 자체가 불량처리되는 문제점이 있다.In addition, there is a problem in the adhesion between the photoresist and the phase pattern, the problem that the light-shielding pattern that should act as a light shielding fall off due to the resist repeating phenomenon during the photoresist development, so that the mask itself is actually poorly processed. have.
본 발명은 상기한 종래의 문제점을 해결하기 위해 안출한 것으로써, 이물질이 발생된 부분만 노광하는 것에 의해 노광에 걸리는 시간을 단축시키고, 마스크의 신뢰성을 향상시키는데 적당한 반도체 소자 제조공정에 따른 이물질 제거방법을 제공하는데 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and it is possible to shorten the time required for exposure by exposing only a portion where foreign matter is generated and to remove foreign matters according to a semiconductor device manufacturing process suitable for improving the reliability of a mask. The purpose is to provide a method.
도 1a 내지 1e는 종래 기술에 따른 이물질 제거방법을 설명하기 위한 공정도1a to 1e is a process chart for explaining a foreign material removal method according to the prior art
도 2a 내지 2d는 본 발명에 따른 이물질 제거방법을 설명하기 위한 공정도2a to 2d is a process chart for explaining a foreign material removal method according to the present invention
도면의 주요부분에 대한 부호의 설명Explanation of symbols for main parts of the drawings
21 : 석영 기판 22 : 위상 반전 패턴21: quartz substrate 22: phase inversion pattern
23 : 차광 패턴 24 : 크롬 이물질23: shading pattern 24: chromium foreign matter
25 : 포토레지스트25: photoresist
상기의 목적을 달성하기 위한 본 발명의 반도체 소자 제조공정에 따른 이물질 제거방법은 위상 반전 마스크 제조시 원하지 않은 부분에 차광 물질이 잔류하는 것을 제거하기 위한 이물질 제거 방법에 있어서, 석영 기판상에 위상 반전 패턴을 형성하는 공정과, 상기 위상 반전 패턴을 포함한 전면에 차광 물질을 증착하고, 패터닝하여 원하는 패턴대로 차광 패턴을 형성하는 공정과, 상기 차광 패턴 형성에 따른 이물질 제거를 위해 상기 차광 패턴을 포함한 전면에 포토레지스트를 도포한 후, 상기 이물질이 형성될 부위만을 선택적으로 노광하는 공정과, 현상 공정을 통해 상기 이물질이 형성된 부위를 노출시킨 후, 건식 식각 공정으로 상기 이물질을 제거하는 공정과, 상기 포토레지스트를 제거하는 공정을 포함하여 이루어짐을 특징으로 한다.The foreign material removal method according to the semiconductor device manufacturing process of the present invention for achieving the above object is a phase inversion on the quartz substrate in the foreign material removal method for removing the residue of the light-shielding material in the unwanted portion during the manufacturing of the phase inversion mask Forming a pattern, depositing a light blocking material on the entire surface including the phase reversal pattern, and patterning the light blocking pattern to form a desired pattern; and removing the foreign matter caused by forming the light blocking pattern. After the photoresist is applied, selectively exposing only the portion where the foreign substance is to be formed, exposing the portion where the foreign substance is formed through a developing process, and then removing the foreign substance by a dry etching process, and the photo And removing the resist.
이하, 본 발명의 반도체 소자 제조공정에 따른 이물질 제거방법을 첨부된 도면을 참조하여 설명하기로 한다.Hereinafter, a method for removing foreign substances according to a semiconductor device manufacturing process of the present invention will be described with reference to the accompanying drawings.
도 2a 내지 2e는 본 발명의 반도체 소자 제조공정에 따른 이물질 제거방법을 설명하기 위한 공정단면도이다.2A through 2E are cross-sectional views illustrating a method of removing foreign matters according to a semiconductor device manufacturing process of the present invention.
도 2a에 도시한 바와 같이 석영 기판(21)상에 위상 반전 패턴(22)을 형성한다.As shown in FIG. 2A, a phase inversion pattern 22 is formed on the quartz substrate 21.
이후, 상기 위상 반전 패턴(22)을 포함한 전면에 차광 물질을 형성한 후, 선택적으로 제거하여 원하는 패턴대로 차광 패턴(23)을 형성한다.Thereafter, the light blocking material is formed on the entire surface including the phase reversal pattern 22, and then selectively removed to form the light blocking pattern 23 in a desired pattern.
이때, 상기 차광 패턴(23)의 물질은 크롬(Cr)을 적용하며, 상기 차광 패턴 형성에 따른 크롬(Cr) 이물질(24)이 원하지 않은 부분에 발생하는 경우, 이를 제거하기 위해 상기 크롬 이물질(24)을 포함한 전면에 포토레지스트(25)를 도포한다.In this case, the material of the light shielding pattern 23 is applied to the chromium (Cr), and if the chromium (Cr) foreign matter 24 caused by the shading pattern is formed in an unwanted portion, the chromium foreign material ( The photoresist 25 is applied to the entire surface including the 24.
이후, 도 2b에 도시한 바와 같이, 상기 이물질(24)이 형성된 좌표를 검출하여 이를 토대로 노광장비를 제어하여 상기 이물질(24)이 형성된 부위만을 선택적으로 노광을 실시한다.Then, as shown in Figure 2b, by detecting the coordinates on which the foreign material 24 is formed and to control the exposure equipment based on this to selectively expose only the portion where the foreign material 24 is formed.
이때, 상기 이물질(24)이 형성된 좌표의 검출은 테스트 장비를 통해 얻어지며, 상기 테스트 장비에서 얻어진 좌표를 노광 장비에 적용하여 해당 부위에만 전자 빔이 묘화되도록 제어한다.At this time, the detection of the coordinates on which the foreign matter 24 is formed is obtained through test equipment, and the coordinates obtained from the test equipment are applied to the exposure equipment to control the electron beam to be drawn only in the corresponding area.
이후, 도 2c에 도시한 바와 같이, 현상 공정을 실시하여 상기 크롬 이물질(24)이 형성된 부위만을 선택적으로 노출시킨 후, 도 2d에 도시한 바와 같이, Cl2가스를 이용한 건식 식각을 통해 상기 크롬 이물질(24)을 제거한다.Thereafter, as illustrated in FIG. 2C, a development process is performed to selectively expose only a portion where the chromium foreign material 24 is formed, and as shown in FIG. 2D, the chromium is subjected to dry etching using Cl 2 gas. Remove the foreign matter (24).
이후, 도 2e에 도시한 바와 같이, 상기 포토레지스트(25)를 제거하면 위상 반전 마스크 제조공정이 완료된다.Thereafter, as shown in FIG. 2E, when the photoresist 25 is removed, the phase inversion mask manufacturing process is completed.
이상에서 상술한 바와 같이, 본 발명의 반도체 소자 제조 공정에 따른 이물질 제거방법은 다음과 같은 효과가 있다.As described above, the foreign material removal method according to the semiconductor device manufacturing process of the present invention has the following effects.
크롬 이물질 제거를 위해 노광공정시 이물질이 형성될 부분만을 선택적으로 전자 빔을 묘화하므로 노광에 걸리는 시간을 최소화할 수 있다.In order to remove chromium debris, an electron beam is selectively drawn only in the portion where the debris is to be formed during the exposure process, thereby minimizing the time taken for exposure.
또한, 건식 식각을 통해 포토레지스트와 위상 반전 패턴간의 접착력 문제를 해결하므로 소자의 신뢰성을 향상시킬 수 있다.In addition, the dry etching solves the problem of adhesion between the photoresist and the phase reversal pattern, thereby improving the reliability of the device.
Claims (3)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990011614A KR20000065390A (en) | 1999-04-02 | 1999-04-02 | Method for removing residue according for manufacturing process of semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990011614A KR20000065390A (en) | 1999-04-02 | 1999-04-02 | Method for removing residue according for manufacturing process of semiconductor device |
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| KR20000065390A true KR20000065390A (en) | 2000-11-15 |
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| KR1019990011614A KR20000065390A (en) | 1999-04-02 | 1999-04-02 | Method for removing residue according for manufacturing process of semiconductor device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100755065B1 (en) * | 2005-12-22 | 2007-09-06 | 주식회사 하이닉스반도체 | Method for depressing growable residue |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100755065B1 (en) * | 2005-12-22 | 2007-09-06 | 주식회사 하이닉스반도체 | Method for depressing growable residue |
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