KR20000057851A - Combined system, method and apparatus for wire bonding and testing - Google Patents

Abstract

PURPOSE: A connection method for a wire-bonding and a test is provided to reduce the number of defective bonds to almost zero and to substantially eliminate the time not to generate a bonding, by performing a computer-controlled bonding and testing for controlling a wire connection between integrated circuit chips and boards, and by automatically adjusting a bonding parameter in response to the testing. CONSTITUTION: A connection method for a wire-bonding and a test comprises the steps of: forming a computer-controlled wire connection so that a wire bonding between a chip and a board can be done, and a length of a wire can be formed; automatically performing a test while computer-controlling the wire connection, to generate test data; and automatically adjusting a bonding parameter of a succeeding wire connection in response to the test data.

Description

COMBINED SYSTEM, METHOD AND APPARATUS FOR WIRE BONDING AND TESTING}

FIELD OF THE INVENTION The present invention generally relates to the field of electronic systems and semiconductor devices, and more particularly, to automated bonding systems, methods and apparatus for wire bonding and quality testing of semiconductor chips.

Conventionally, input / output pads of integrated circuit chips have been connected to the outside by metal wires that form a predetermined span. The metal of the input / output pad is typically composed of aluminum or copper and is commonly used as gold or copper wire material. In most semiconductor devices, capillary is used to attach one end of the connecting wire (eg gold) to the pad metal in a flattened ball shape. Careful control of high temperature, ultrasonic energy, mechanical pressure and bonding time is required for high quality welding, for example in the case of gold balls on aluminum metal, the welding consists of five series of intermetallic gold-aluminum And need to be started quickly within a short bonding time (5 to 20 ms).

The other end of the connecting wire is attached in form of a stitch bond to the metal surface by a capillary tube. In various semiconductor devices, the metal surface is composed of silver flash deposited on a copper base leadframe, and wire stitches are formed at high temperature and mechanical pressure (range of about 5 to 20 ms) so that intermetallic diffusion is achieved. Is generated. When using wedge-shaped tools instead of capillaries to form wedge bonds, similar intermetallic diffusion occurs.

Wire bonding operations are performed by an automated, computer-controlled bonder, typically coupled with a vision system. This allows the setting and control of bonding parameters such as the geometric positioning of the bonding tool, impact velocity and contact force, and dwell time and ultrasonic energy during bond formation. Despite this control, the quality of the bond is at its lowest limit or very poor. In most cases, the root cause is due to unknown variables (eg crystalline or hardness) of the metal to be bonded or insufficiently cleaned metal surfaces (eg undetected oxidation, organic residue or particulate contamination). to be. Therefore, over the last decade, quality tests have been developed that aim to identify poor bond quality or run-away processes as early as possible.

The most important and regularly performed test is pulling the wire length to the wire break point and cutting the wire attachment, especially the ball bond, to the cutting point. In both of these tests, the required force is measured and the test is destructive and must be performed off-line, but is performed relatively quickly. Other tests are very cumbersome and time consuming, and these tests include chemical etching, surface Auger analysis, or Knoop metal hardness analysis of metal surfaces or cross sections of metallurgy. Of course, all of these tests are disruptive and off-line.

Summary of the Invention

According to the present invention for a semiconductor integrated circuit (IC) assembly, the two operations of wire bonding and wire quality testing are combined into one computer controlled system, one tool head performing the bonding operation first and then the testing operation. Is performed on-line, and finally, before continuing the bonding process, a predetermined correction is performed with real-time feedback with the bonding parameters based on the testing result. According to the present invention, the number of defective bonds is reduced to almost zero, and the bonding production downtime due to off-line testing is substantially eliminated.

The present invention relates in particular to high density ICs with multiple input / output or bonding pads, chips mounted on insulating substrates, devices using metal leadframes and devices requiring small package outlines and low side. These ICs can be found in many semiconductor device classes such as processors, digital and analog devices, standard linear and logic products, memory, high frequency and high power devices, and chip categories in large and small areas. The present invention helps to ensure built-in quality and reliability in applications such as cellular communication devices, pagers, hard disk drives, laptop computers and medical devices.

The present invention uses the materials and basic processing commonly used in wire bonding techniques in the case of ball bonding and wedge bonding variations. However, the bonding process changes only the bonding process so that test data can be obtained after completing only a statistically significant number of bondings. The test data is evaluated in real time and automatically converted into potential corrections of the bonding parameters and fed back to the bonder. In this way, the features of all subsequent bonds are automatically improved.

One feature of the present invention is to provide a technique that combines wire bonding and wire testing operations in a semiconductor assembly that is fully automatic and requires no additional equipment space for the bonder machine. This feature is achieved by the addition of a computer controlled tool in close proximity to the bond head designed to perform quality tests that pull the wire, push the bond and record the force required.

Another feature of the present invention is to achieve these goals while using a manufacturing equipment base that is installed to keep equipment modification costs to a minimum and eliminate the need for a new base capital.

Another feature of the present invention is to provide real-time feedback of the testing results so that the bonding parameters can be corrected to improve the bond quality without significant bond downtime. This feature is achieved by automatically converting test data into bonding parameters using direct feedback to the bonder.

Another feature of the present invention is to provide flexibility in the bonding process to accommodate variations in chip metallization, such as variable crystallinity, oxide formation and at least somewhat accidental impurities.

Another feature of the present invention is the introduction of a more general assembly concept that is flexible to be applied to ball bonding as well as to wedge bonding technology and various classes of semiconductor IC products.

These features are achieved by the techniques of the present invention that relate to the design concepts and methods of systems and devices suitable for high capacity production.

The wire testing tool is designed as an elongate arm with certain features at a first end suitable for pulling wire and pushing bonding. Such a tool for wire testing may be retracted during the wire bonding process.

In one embodiment of the invention, this retraction is achieved by rotating the arm about one axis through the second end. The axis is fixed to the support structure attached to the tool head for operating the bonding tool.

In one aspect of the invention, retraction is achieved by rotating the arm together with the support structure, in which case it has an axis of rotation near the tool head.

In addition to these features, the technical advantages shown in the present invention will become apparent from the following description of the preferred embodiments of the present invention in view of the accompanying drawings and the appended claims.

1 is a block diagram of a computer system that combines wire bonding and wire testing and automatically corrects bonding parameters.

2 is a schematic diagram of a portion of an integrated circuit chip mounted on a leadframe.

3 is a schematic, simplified cross-sectional view of the tip of a capillary and its movement during wire bonding operation;

4A and 4B are schematic, simplified cross-sectional views of ball bonds during a given state of bond cut quality test.

5 is a schematic, simplified perspective view of a first embodiment of a tool head of the present invention.

6 is a schematic perspective view of a wire testing tool of the present invention.

7A and 7B are schematic, simplified perspective views of a second embodiment of a tool head of the present invention.

8A, 8B and 8C are schematic, simplified perspective views of a tool head and a vision subsystem during a given state of the calibration process according to the present invention.

<Explanation of symbols for the main parts of the drawings>

100: coupling system

101: chip installed

102: Material Handling System

103: computer

105: bonding tool

106: tool head

107 Z driver

108: test tool

109: vision subsystem

110: test data storage device

111: data converter

112: bonding parameter storage device

As a preferred embodiment of the present invention, FIG. 1 shows a block diagram of a coupling system 100 for automatically bonding and testing wire connections attached to integrated circuit (IC) chips and substrates. The chip is typically mounted on a support (which may be part of a substrate), and the chip mounted in FIG. 1 is indicated by reference numeral 101. The mounted chip is moved into and out of the system 100 by a material processing subsystem 102 coupled to the system's computer 103. Within the system, the movement of the mounted chip 101 may also be adjusted by the X-Y table 104 also coupled to the computer 103.

More specifically, FIG. 2 schematically illustrates mounting chips and wire bonds to a substrate. The IC is made of an active surface of a semiconductor chip 201 made of silicon, silicon germanium, gallium arsenide, or any other semiconductor material used in the manufacture of electronic devices. In the case of silicon, the thickness of the chip is usually 225 to 475 mu m. The chip 201 is mounted on the support 202 (which may be part of the substrate) such that the active circuit side having the plurality of bonding pads 203 faces away from the support at a predetermined distance. Such mounting is usually carried out with a thin film of adherent epoxy or polyimide (indicated by 209 in FIG. 3),

The bonding pads 203 are formed into a spherical, square or circular shape having a side length of about 40 to 150 mu m, preferably 90 to 100 mu m. For ICs with many input / output terminals, the pitch between adjacent bonding pads is typically in the range of 50 to 200 μm, preferably 50 to 75 μm. 2 illustrates a plurality of external contact pads 204. When the substrate is a metal leadframe, the support 202 is a chip mounting pad and the contact pad 204 is an external lead. When the substrate is a conductive pattern mounted in an insulating medium, the support 202 may be part of the substrate, and the contact pad 204 is a metal pad integrated with the substrate.

The bonding pads 203 are often made of aluminum alloyed primarily with 0.5-2% copper and / or 0.5-1% silicon. The thickness of the metal layer is about 0.4 to 1.5 mu m. Aluminum is mainly a thin layer (4-20 nm), for example of titanium, titanium nitride, titanium tungsten, tantalum, tantalum nitride or tungsten nitride. Alternatively, the bonding pads 203 may include copper (about 0.2-1.0 μm thick) coated with a bondable metal thin film such as palladium, gold or nickel.

Wire connection 205 provides an interconnection between bonding pads 203 and contact pads 204. The wire connection is attached to the bonding pad 203 by ball bond 206 and to the contact pad 204 by stitch bond 207. Alternatively, the attachment may be a wedge bond on the bonding pad and the contact pad. The wire length 208 extends between the two attachments.

In a preferred embodiment of the present invention, standard round wires of about 18 to 33 μm in diameter, preferably 20 to 25 μm are used. In the case of bonding with aluminum pads, the wire is optionally used to control the thermally-affecting (sometimes ball formation) of beryllium, copper, palladium, iron, silver, calcium or magnesium, Mechanically weak). In the case of bonding with a copper pad, the wire consists of copper or gold of the same diameter.

In FIG. 3, the wire bonding process is started by positioning the chip 201 mounted on the support 202 by an adhesion layer 209 on a heated pedesral and raised to a temperature of 150 to 300 ° C. Wire 205 is secured through a capillary with tip 301. At the tip of the wire, free air balls are created using frame or spark technology. Such balls typically have a wire diameter of about 1.2 to 1.6. The capillary is moved towards the chip bonding pad, and the ball is compressed against metallization of the pad, resulting in a nail head configuration 302. In the case of aluminum pads, the compressive force and ultrasonic energy combinations form intermetallic gold-aluminum, resulting in strong metal bonding. The compressive force (called Z- or mash force) is typically about 17 to 75 g, the ultrasonic time is about 10 to 20 ms, and the ultrasonic force is about 20 to 50 mW. In bonding, the temperature is generally 150 to 270 ° C. In the case of copper wires on copper pads, intermetallic diffusion occurs to produce strong bonds.

Moving the capillary through the air in some computer-controlled fashion creates a wire looping of exactly defined form. For example, the tip of the capillary follows the path 303 as schematically shown in FIG. 3 to form a natural loop 304. Due to recent advances in technology, circular, trapezoidal, linear and custom loop paths can be formed. Eventually, the capillary reaches the desired destination 305. The capillary is lowered to contact pad 204, and upon imprint of the capillary, a metal stitch bond is formed, and the wire is cut to relax the capillary. Stitch contact is less reliable, and the outer dimension of the stitch imprint is about 1.5 to 3 times the wire diameter (its actual form depends on the type of capillary used, such as capillary wall thickness and capillary footprint).

Alternatively, both wire ends 302 and 305 may be wedge bonded.

Recent technological advances in wire bonding allow for compact, reliable ball and stitch contact formation and tightly controlled form of wire loop 304. Such advances can be found, for example, in Computerized Bond 8020 by Willow Groove Corick and Couch, USA, or ABACUS SA by Texas Instruments, Dallas, Texas.

Referring to FIG. 1, the capillary is coupled to the Z driver 107 and is part of the bending tool 105 on the tool head 106. Z driver 107 and X-Y table 104 receive positioning commands from computer 103.

1 also shows a testing tool 108 coupled to a Z driver and a computer 103. This testing tool is the backbone of the present invention, which, for example, performs subsequent quality tests on wire connections completed by wire length 304, ball bond 302 and stitch bond 305 as shown in FIG. Configured to execute.

Wire Pull

The wire pulling test measures the strength of the wire length, the quality of the stitch bond and the performance of the bonding device. A testing tool, preferably formed in the shape of a hook, is used to hold the wire length (there are standardized rules for accurate positioning of the tool) and to lift the wire length towards the increasing force until the wire length is broken. The force required for breakage is measured and recorded in a test data storage device (indicated by reference numeral 110 in FIG. 1). However, for information regarding the strength of the ball bond, the test for pulling the wire is an order of magnitude less sensitive to the bond shear stress test.

Defective wire length breakdown appears at too low attraction or error locations along the wire length, which indicates a weakened wire zone or incomplete bond performance due to error looping, heating or bending of the wire length.

Bond Shear

The "bond shearing" test is a test of ball bond (or wedge bond strength), intermetallic quality formed between the ball metal and the bonding pad metal (thus, bond shear stress is a function of wafer fab process performance). Is an indirect measure of quality) and the effect of bonding parameters. The testing tool, preferably formed in the shape of a ram with a flat contact surface, pushes outward with respect to the wire ball (there are standardized rules for accurate positioning of the tool) and exerts external forces on the ball until there is no ball shear stress. Used to increase. The force required for shear stress relief is measured and recorded in a test data storage device (indicated by reference numeral 110 in FIG. 1). However, the ball shear stress test does not measure wire or stitch bond quality.

Too low shear stress or defective shear stress at improper locations indicates insufficient intermetallic formation, lifting of pad metal, lifting of semiconductor portions during pad metallization, wire shear stress or ball shear stress at improper locations.

In FIGS. 4A and 4B, the IC chip 40 has a bond pad metal 41. In FIG. 4A, a ball bond 42 including intermetallic (not separately shown) is formed at the weld with the pad metal 41. Shear stress ram 43 is a touching ball 42 having a flat surface 43a. In FIG. 4B, the shear bond is removed at the ball bond weld zone 44 by the shear stress ram 43 moving outward, and the shear stress proceeds through the intermetallic zone, thus the quality of the bond. Test The main portion 46 of the ball 42 is still attached to the wire 45.

Referring to FIG. 1, force data obtained by a wire pulling test and a ball shear stress test is stored in the test data storage device 110. The data converter 111 converts the test data into instructions for adjusting the computer control 103 of the subsequent wire lengths generated by the bonding tool 105 and the bonding parameters for bond attachment. The corrected bonding parameters are stored in a bonding parameter storage device 112 coupled to the computer 103. Using this corrected bonding parameter, the number of defective bonds is reduced to nearly zero, and the bond generation downtime due to off-line testing and parameter correction is substantially eliminated.

Vision subsystem 109 coupled to computer 103 serves to align the relative positions of the bonding and testing means of the device and tool head to be bonded. There is also a need for a calibration procedure (discussed in conjunction with FIGS. 8A, 8B and 8C).

5 shows a preferred embodiment of the tool head of the present invention. The tool head, indicated generally at 500, has a carrier 501 that is rotatable about the Z axis (Z driver) 502. The carrier 501 is attached with bonding means 510 and testing means 520. Tool head 500 is shown in close proximity to IC chip 503 that is wire bonded to lead frame lead 504 to test bond quality. The bonding means 510 comprises an arm 511 fixed to the carrier 501 and a bonding tool 512 comprising a capillary in an appropriate support structure.

The testing means 520 comprises an arm 521 fixed to the carrier 501 and a testing tool 522 attached to the arm 521 so as to be rotatable about an axis. By rotating the testing tool 522 about this axis, this testing tool can be retracted to allow the bonding tool 512 to operate freely during the wire bonding operation.

6 illustrates testing tool 522 in more detail. The testing tool, shown generally at 600, is formed in the shape of an extended arm 63 with a longitudinal axis 61. The length 63a of the arm 63 is 5-6 mm. In a preferred embodiment, the testing tool is made of metal such as stainless steel or copper, must be resistant to low wear, and must be sufficiently robust against minimal deformation under testing conditions that pull and push the wire.

At one end 64, the testing tool is suitable for pivotal bonding (as shown in FIG. 5) to be able to rotate about axis 62. At the other end 65, the testing tool has protrusions 66 extending transversely from the arm 63. In a preferred embodiment, the projection 66 extends generally perpendicular from the longitudinal axis 61 with respect to the length 67a of the projection. In general, the length 67a of the projection depends on the diameter of the wire to be tested and the perimeter of the length. For example, in the case of a wire having a diameter of 25 μm and a pitch of 150 μm, the length 67a of the protrusion may be about 200 to 250 μm. Its length should be large enough to hold the wire within the bonder's X-Y positioning precision, but small enough for application to closely spaced wire lengths. Surface 67 exhibits an appearance that allows the wire to be grasped during the test of pulling the wire, and typically the surface resembles a hook shape. The surface has curved edges to prevent flaws in the wire to be tested in case of false errors.

End 65 has at least one surface 68 suitable for pushing against wire bonds, particularly ball bonds, in bond shear stress testing. As such, the tool 600 is operable to move vertically and laterally to perform a shear stress test. In a preferred embodiment, the surface 68 is flat to provide a well defined contact surface for the wire bonds. In other embodiments, the surface 68 may be curved. Width 68a is related to the ball bond diameter and should not be small enough to cut through the ball, but should be large enough to be in contact with adjacent balls. Typical widths are 75 to 125 μm.

Shear stress contact surface 68 is associated with bottom surface 68b of tool 600. (A person of ordinary skill in the art will recognize that the terms "lower" and "end", etc., are used for illustrative purposes only, as the devices and assemblies of the present invention may be used in a variety of states and ways.) The shape of the surface provides positive touchdown detection and ease in driving the projections 67 between the wires without excessive tool wear. The flatness of the bottom surface 68b facilitates contact with the surface without digging into it, and the inclination allows the wire to be pushed without breaking.

7A and 7B show another embodiment of the present invention in the construction of a tool head, generally indicated at 700. The tool head has a carrier 701 that can rotate about the Z axis (Z driver) 702. Bonding means 710 and testing means 720 are attached to the carrier 701. In FIG. 7A, tool head 700 is shown in close proximity to IC chip 703 that is wire bonded to lead frame lead 704 and bond quality is to be tested. The bonding means 710 comprises an arm 711 fixed to the carrier 701 and a bonding tool 712 comprising a capillary in a suitable support structure.

The testing means 720 includes an arm 721 rotatable about an axis 723 for retracting the testing means 720 so that the bonding tool 712 can operate freely during the wire bonding operation. The actual testing tool 722 is fixed to the arm 721. FIG. 7A shows the test position of the arm 721 and FIG. 7B shows the position of the arm 721 during the bonding operation. Advantages of the embodiment shown in FIGS. 7A and 7B over the embodiment shown in FIG. 5 are the low rotational inertia during bonding, and the disadvantage is that the free space required for tool retraction is greater.

Options for performing the retraction shown in FIG. 7B include solenoids, piezo stacks, micro-rotary motors and air cylinders.

Computer controlled bonding and wire connection testing between the IC chip and the substrate (e.g., lead frame) and a method for automatically adjusting the bonding parameters in response to such testing include the following processing steps:

Forming a wire connection between the chip and the substrate under the computer control described above in conjunction with FIG. 3 to create ball and stitch attachment and wire length while the testing tool is in the retracted position;

*-Tilt the Z axis upward to get the bonding tool clear of the testing area,

Moving the bonding tool to the test apparatus by moving the X and Y positioning system by a calibrated offset providing clearance to test tool ground;

Performing some X-Y passes through the test area to establish a nominal “load-free” force measurement;

Rotating the testing tool to the testing position;

Performing Z axis ground calibration using a testing tool;

Raising the Z axis by a programmed amount for shear stress testing;

Using the X-Y axis to drive the test tool to shear strain the wire ball while recording electrical current as test data;

Calculating the shear stress from the electrical current;

Inverting the role of the Z and XY axes for testing to pull the wire on subsequent wire connections-using the XY axis to position the tool for testing, and using the Z axis to move the tool during test measurements. -; And

Automatically adjusting the bonding parameters of subsequent wire connections in response to the test data

Is illustrated.

8A, 8B and 8C show the calibration process steps of the testing means. Each figure shows a perspective view of tool head 801 and vision subsystem 802. The tool head 801 is attached with a bonding tool 803 and a testing tool 804. The testing tool is shown on top of the metallized testing surface 805, which may be an actual chip bonding pad or a general mirrored surface that is similar in metal hardness properties to aluminum commonly used in IC fabrication. Using the support of the motion arrows of FIGS. 8A, 8B and 8C, the following calibration process steps are as follows:

Placing the tool head 801 in the testing apparatus;

Placing the test tool 804 over the test region 805 so that the end has a transversely projecting surface region 805;

Automatically recording the associated X-Y position of the X-Y table;

Directing the test tool 804 to contact with the surface 805 (position 806 in FIG. 8B) using the Z driver;

Automatically recording the associated Z position of the Z driver;

Using a Z driver, applying sufficient pressure with the testing tool 804 to create a visible mark 807 (representing the bottom surface 68b of the tool 600 in FIG. 6) in the area 805. step;

Raising the test tool 804 over the surface 805;

Using an X-Y table to move the field of view 808 of the vision subsystem 802 to approximate the location of the tool mark 807 (see FIG. 8C);

* Automatically recording the X-Y position;

Using the vision subsystem to determine the exact position of the tool mark 807;

Repeating all calibration processing steps using the bonding tool 803 in addition to the testing tool 804; And

Automatically correcting the exact relative position of the bonding tool 803, the testing tool 804, and the vision subsystem 802.

Although the present invention has been described with reference to exemplary embodiments, this description should not be interpreted in a limiting sense. Those skilled in the art will appreciate that various modifications and combinations of the illustrated embodiments, as well as other embodiments of the invention, are possible with reference to the specification. For example, the material of the semiconductor chip may include silicon, silicon germanium, gallium arsenide or other semiconductor materials used in the manufacture of semiconductors. As another example, the improved bonder may include equipment such as Shinkawa UTC-200 manufactured by Shinkawa Electric Company Ltd. of Tokyo, Japan. Therefore, the appended claims are intended to cover any such modifications or embodiments.

The present invention provides a technique that combines wire bonding and wire testing operations in a semiconductor assembly that is fully automatic and requires no additional equipment space for the bond machine. The present invention also uses a manufacturing equipment base that is installed to keep equipment modification costs to a minimum and eliminates the need for a new base capital, and also allows for testing parameters to be calibrated to improve the bonding quality without significant bond downtime. Provide real-time feedback.

Claims (23)

A coupling system for automatically bonding and testing an integrated circuit chip having at least one bonding pad and a wire connection attached to a substrate having at least one contact pad spaced apart from the bonding pad, wherein: A computer for controlling the bonding and testing; A wire bonder to extend the wire spacing from the bonding pad to the contact pad, to form a wire bond on the two pads, and to follow instructions from the computer; An X-Y table suitable for positioning the chip mounted on the substrate in combination with the bonder; Means controlled by the computer to adjust the relative positions of the bonder and the table relative to each other; A testing device coupled with the bonder to exert a force for testing bonding quality controlled by the computer, the testing device capable of storing the testing data in a test file; A defect bond by including a data converter coupled to receive the testing data and converting the data into instructions for adjusting the bonding parameters of subsequent wire bond lengths and computer control of the attachment to be formed by the bonder. A bonding system for automatic bonding and testing that reduces the number of to nearly zero and virtually eliminates bond generation downtime. 10. The system of claim 1, further comprising a vision subsystem coupled to the computer for electronically sensing the relative position of the integrated circuit chip, the wire connection, and the testing device. 2. The bonding system of claim 1 wherein the attachment comprises ball bonds, stitch bonds, and wedge bonds. The method of claim 1, wherein the bonding parameters and the computerized instructions comprise an automatic bonding and testing comprising a geometrical position for attachment, impact speed and contact force of the bonding tool, downtime and ultrasonic energy at bond formation, and operating temperature. Combined system. 10. The system of claim 1, wherein said adjustment to relative position is provided by moving said bonder under computer control. The bonding system of claim 1, wherein the testing for bonding quality comprises pulling the wire length and applying the pushing force including a ball bond, a stitch bond, and a wedge bond. . A method for performing computer controlled bonding and testing of wire connections between integrated circuit chips and substrates and for automatically adjusting bonding parameters in response to the testing, Forming a wire connection such that wire attachment and wire length are formed between the chip and the substrate under computer control; Automatically testing the wire connection under computer control to generate test data; And automatically adjusting the bonding parameters of subsequent wire connections in response to the test data, thereby reducing the number of defect bonds to nearly zero and virtually eliminating the bond generation downtime. 8. The method of claim 7, wherein the wire bonding and testing comprises bonding means and means for testing the quality of the bonding wires and is achieved with a tool head attached to an XY table coupled to the computer, wherein the bonding means and testing means Is a computer controlled bonding and testing method attached to a Z driver. 9. The computer controlled wire bonding of claim 8 wherein said computer controlled wire bonding comprises: Lowering the bonding means into contact with the chip bonding pads to form a ball bond; Moving the bonding means upwards and laterally to form a wire length; Lowering the bonding means into contact with a substrate contact pad to form a stitch bond Computer controlled bonding and testing method comprising a. 9. The computer controlled wire bonding of claim 8 wherein said computer controlled wire bonding comprises: Lowering the bonding means into contact with the chip bonding pads to form a wedge bond; Moving the bonding means upwards and laterally to form a wire length; Lowering the bonding means into contact with a substrate contact pad to form a wedge bond Computer controlled bonding and testing method comprising a. 11. The method of claim 9 or 10, wherein the lowering and raising of the bonding means is provided by a Z driver coupled to the computer, and the lateral movement of the bonding means is provided by an XY table coupled to the computer. Computer controlled bonding and testing method. The method of claim 8, wherein the computer controlled testing is Lowering the testing means to capture the wire length; Raising the testing means to pull the wire length until the wire is cut; Recording the force required to initiate the wire cutting; Lowering the testing means to push the wire attachment laterally until the wire attachment is cut; Recording the force required to initiate the wire attachment cutting Computer controlled bonding and testing method comprising a. 13. The computer controlled control of claim 12, wherein the lowering and raising of the testing means is provided by a Z driver coupled to the computer and the lateral push of the testing means is provided by a XY table coupled to the computer. Bonding and testing methods. 9. The method of claim 8, further comprising retracting the testing means while the step of forming the wire connection is being performed. 8. The method of claim 7, wherein the step of forming the wire connection is repeated a number of times before a subsequent step of testing the wire connection and generating the test data is performed, and the adjusting of the bonding parameters is performed on statistical test data. Based computer controlled bonding and testing method. 13. The computer controlled bonding and testing method of Claim 12, wherein the step of pulling wire length and the step of pushing the wire attachment are performed on separate wire connection populations. An apparatus for automatically bonding a wire connection and testing the quality of the connection between bonding pads on an integrated circuit chip and contact pads on a substrate, the method comprising: An apparatus for controlling the bonding and testing, A tool head cooperating with positioning means coupled to the computer, A first tool coupled to the tool head to form the bond wire connection; A second tool coupled to the tool head capable of testing the quality of the connection Wire connection automatic bonding device comprising a. 18. The device of claim 17, wherein the positioning means comprises an X-Y table and a Z driver. 18. The apparatus of claim 17, wherein the first tool is a bonding tool comprising a capillary and wedge tool. 18. The apparatus of claim 17, wherein the second tool is a mechanical arm suitable for exerting force in the X, Y, and Z directions. An apparatus for testing the quality of a bonding wire attached to a wire bonder and formed in an assembly of an integrated circuit, the apparatus comprising: An elongate arm having a longitudinal axis and first and second ends, The first end is pivotally attached to the bonder, The second end further has a protrusion extending transversely from the longitudinal axis and generally perpendicular to the longitudinal axis, the second end further comprising a surface contoured to capture wire length in a wire pull test, The second end further comprises at least one surface suitable for pushing the wire bond in a bond cutting test, And the arm moves vertically and horizontally to perform the test. The testing device of claim 21, wherein the testing device rotates about an axis such that the arm retracts during wire connection. The testing apparatus of claim 21, wherein the at least one surface of the second end suitable for pushing is a flat surface.