KR20000044679A - Method for monitoring chamber status of semiconductor device manufacture equipment - Google Patents

Abstract

PURPOSE: A method for monitoring a chamber status of semiconductor device manufacture equipment is provided to maintain constantly a chamber condition by setting up simply a cleaning period. CONSTITUTION: A method for monitoring a chamber status of semiconductor device manufacturing equipment comprises the following steps. Components of a material adhered on a wall face of a chamber are analyzed by measuring an energy of an Auger electron reflected after emitting an electron beam on the wall face of a semiconductor device manufacture equipment. The material is etched as much as a predetermined thickness by using an Ar ion gun(7). The deposition of the material is monitored and a cleaning period is set up by repeating the above processes.

Description

Chamber condition monitoring method of semiconductor device manufacturing apparatus

The present invention relates to a method for monitoring a state of a chamber used in semiconductor device manufacturing equipment, and more particularly, to a method of maintaining a constant chamber condition at all times by simply setting a cleaning cycle of a chamber.

The semiconductor manufacturing apparatus needs to be managed and maintained at a certain level of monitoring specifications in order to secure process reliability. Existing methods for monitoring the chamber are monitored daily or weekly, as shown in FIG. First, perform particle inspection using wafers, process steps for particle monitoring in a chamber according to a predetermined order, perform particle monitoring again, compare and compare with a predetermined spec value as a difference, and produce wafer processing for production. It is decided whether or not to execute. If the results are poorly monitored compared to the specification values, perform wet cleaning of the chamber or seaming as a task to adapt the atmosphere of the chamber to the process conditions. At this time, a wafer is also needed when adjusting. After completing this operation, the steps for monitoring the chamber are performed once again. Since the above operations are repeated daily or weekly, more wafers are required to maintain the actual equipment, and according to the increase in the wafer size, a large amount of maintenance costs are required only for the wafer value for chamber monitoring.

The above description is for the case of only particles in the chamber, and according to the equipment, the same method is additionally performed to monitor the etching rate or the deposition rate. It will increase exponentially.

The present invention is to solve the above problems, the chamber is focused on the fact that the amount of polymer is deposited on the chamber wall as the frequency of use and the amount of use increases, without the use of a wafer without an electron beam, ion beam, X-ray, laser or point light source It is an object of the present invention to provide a method for significantly reducing the maintenance costs of semiconductor manufacturing apparatus by setting the cleaning cycle of the chamber by monitoring the thickness of the polymer present in the chamber wall using light.

The chamber condition monitoring method according to the first embodiment of the present invention for achieving the above object is to measure the energy of the auger electrons emitted by incident electron beam on the wall surface of the process chamber of the semiconductor device manufacturing apparatus of the material attached to the chamber wall After analyzing the components, using the Ar ion gun, the material is etched to a predetermined thickness, and then the electron beam is incident again. The cleaning cycle of the chamber is set by monitoring the deposition degree of the material deposited on the chamber wall. .

Chamber state monitoring method according to a second embodiment of the present invention for achieving the above object is attached to the chamber wall by analyzing the mass of secondary ions emitted by the incident ion beam accelerated to the wall surface of the process chamber of the semiconductor device manufacturing apparatus The cleaning cycle of the chamber is established by monitoring the deposition of the deposited material.

In accordance with a third aspect of the present invention, there is provided a method for monitoring a chamber state by analyzing X-rays emitted by incident X-rays on a wall of a process chamber of a semiconductor device manufacturing apparatus, and then arranging the chamber using an Ar ion gun. After etching a predetermined thickness of the material deposited on the wall surface, the step of injecting X-rays is repeatedly performed to monitor the deposition degree of the material deposited on the chamber wall to set the cleaning cycle of the chamber.

Chamber condition monitoring method according to a fourth embodiment of the present invention for achieving the above object is to measure the intensity of the laser reflected by the laser incident on the wall surface of the process chamber of the semiconductor device manufacturing apparatus of the polymer deposited on the wall surface of the chamber Deposition rate is monitored to set the cleaning cycle of the chamber.

The chamber condition monitoring method according to the fifth embodiment of the present invention for achieving the above object is a wall surface of the chamber using a path difference of the reflected wave reflected after the laser or point light source is incident on the wall surface of the process chamber of the semiconductor device manufacturing apparatus Set the cleaning cycle of the chamber by monitoring the degree of deposition of the polymer.

1 is a flowchart illustrating a conventional chamber condition monitoring process.

2 is a cross-sectional view showing a general etching chamber.

3 is a view showing a chamber state for monitoring the chamber condition according to an embodiment of the present invention.

4 is a diagram illustrating a chamber state for monitoring chamber conditions according to another embodiment of the present invention.

5 is a diagram illustrating a chamber state for monitoring the chamber condition according to another embodiment of the present invention.

FIG. 6 is an enlarged view of the mirror part of FIG. 5; FIG.

* Description of the symbols for the main parts of the drawings *

1.GDP 2.The wall of the chamber

3. Viewport 4. Pumping part

5.chuck 6.mirror

7.electron beam incident device and Ar ion gun,

7.ion beam scanning device and secondary ion mass spectrometer,

7. X-ray injector and Ar ion gun,

7.Laser generation and strength measuring device

7.Laser or point light source incident device and reinforcement

12.Chamber wall 13.Mirror

14. Deposited polymer

Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.

The principle of the present invention will be described with reference to the drawings.

2 shows a general etching chamber, which includes a chuck 5 on which a wafer is mounted, a chamber wall 2 constituting a reaction chamber, and a gas distribution panel (GDP) for supplying etching gas ( 1), consisting of a pumping part 4 for pumping the chamber, the chamber wall is provided with a view port 3 for monitoring the end of point (EOP).

3 is a cross-sectional view showing a state in which a mirror 6 is attached to the chamber wall 2 of FIG. 2, and an electron beam injector and an Ar ion gun 7 are attached to the viewport 3. The chamber wall state analysis method according to the first embodiment of the present invention uses an AES (Auger electron spectroscopy) method, which first emits an electron beam 8 focused on a surface of the mirror 6 at a size of several thousand microns. Analyze the composition of the material by measuring the energy of the Auger electrons (9,10), and then etch the area where the analysis is completed with an Ar ion gun (7) to a certain thickness, and then concentrate the size to The method of measuring the energy of auger electrons emitted by injecting an electron beam is repeated to determine the state of the polymer present in the chamber wall based on information about the thickness of the etch and the composition of the emitted material. Here, the mirror 6 uses a standard that is easy to analyze in order to avoid crosstalk in the analysis of emitted auger electrons.

2 and 3, the chamber by attaching an electron beam injector and Ar ion gun focused to a specific size of the existing chamber and a mirror using a standard material on the opposite side to increase the efficiency of analysis. As the number of uses increases, the chamber conditions can be analyzed by analyzing the degree of polymer deposited on the mirror. In the above embodiment, the electron beam incident position and the position of the Ar ion gun may be changed within a certain range in order to prevent the disadvantage that the region where the electron beam is incident is already analyzed before being incident again in the region where the polymer is thinned. In addition, the data analyzed using the above method may be transmitted to the central control unit of the semiconductor manufacturing apparatus so that an alarm may be displayed on the monitor at a certain point so that the operator may easily obtain information on the chamber condition.

The monitoring method may be used after turning on the plasma in the chamber, or after turning off the plasma, and may be used simultaneously in the plasma on state and the plasma off state.

Using the above principle, the amount of wafers used for the daily or weekly repeated chamber inspection as described above can be largely reduced. Especially, considering the increase in wafer size and the increase in wafer cost, the equipment maintenance cost is drastically reduced. You can.

Next, a second embodiment of the present invention will be described. The second embodiment of the present invention uses a secondary ion mass spectroscopy (SIMS) method, which scans an ion beam accelerated at several KeVs to a chamber wall to measure the mass of secondary ions that are detected after a certain portion of the material, and The composition of the molecules is analyzed to monitor the condition of the polymer present on the chamber walls to establish the cleaning cycle of the chamber. For this method, instead of the electron beam injector and the Ar ion gun 7 of FIG. 3, an ion beam propulsion device accelerated to several KeV and a device capable of measuring the mass of the emitted secondary ion are attached to the viewport 3. do. At this time, the mirror 6 serves to prevent crosstalk in the analysis of the secondary ions. In the second embodiment of the present invention, the ion beam may be changed within a certain range in order to prevent the disadvantage that the area where the ion beam is incident is already analyzed and is reentered in the area where the polymer is thinned.

Next, a third embodiment of the present invention will be described. The third embodiment of the present invention uses the X-ray photoelectron spectroscopy (XPS) method, and uses the X-ray injector and the Ar ion gun in place of the electron beam injector and the Ar ion gun 7 in the apparatus of FIG. 3. do. In the analysis method of the chamber wall state, first, by analyzing the kinetic energy of the photoelectrons emitted by the incident X-rays on the surface of the mirror (6) to analyze the components of the material, and then etched a certain thickness with the Ar ion gun (7), The method of analyzing the kinetic energy of the photoelectrons emitted by incident X-rays is repeated to determine the state of the polymer in the chamber wall based on the thickness of the etch and the information on the composition of the emitted material. The mirror here uses a standard that is easy to analyze to avoid crosstalk in the analysis of emitted photons. In the third embodiment of the present invention, the incident position of the X-rays and the position of the Ar ion gun may be changed within a certain range in order to prevent the disadvantage that the region where the X-rays are incident is already analyzed before being incident again in the thinned region.

Next, a fourth embodiment of the present invention is a method of using a laser, which uses an existing chamber as shown in FIG. 4, but adds a laser generation and intensity measuring device 7 to the viewport 3 to laser the chamber wall. (8) firing and measuring the intensity of the laser (9) reflected from the chamber wall, and as the frequency of use of the chamber increases, polymers are deposited on the chamber wall, thereby reducing the intensity of the reflected laser (9). The cleaning cycle of the chamber is set by monitoring the degree of deposition of polymer inside the chamber. In the fourth embodiment of the present invention, the chamber wall itself has the characteristic of being reflected by the laser, so that a specially manufactured mirror is not required. HeNe laser or Ar laser may be used as the laser.

The fifth embodiment of the present invention utilizes a sine or cosine graph formed according to constructive and destructive interference caused by incidence of laser or point light source incident on the chamber wall without using a wafer. By setting the cleaning cycle of the chamber by monitoring the thickness of the polymer on the chamber wall through the analysis of the graph obtained here. FIG. 5 shows a state in which a mirror 6 is attached to the chamber wall of FIG. 2, and an incidence device for irradiating light of a laser or point light source and a reinforcement and cancellation interference analyzer 7 is attached to the viewport 3. It is a cross section. Here, the mirror 6 uses a standard that is easy to analyze in order to avoid cross talk.

FIG. 6 is an enlarged view of the mirror of FIG. 5, in which light or laser is incident, partly reflected immediately, and partly reflected at the end of the deposited polymer. In this case, the refractive index of the polymer is defined as n, and the wavelength in the polymer λ n, the wavelength in the chamber λ If you define

λ n = λ / n (1)

Equation

In addition, the distance from the starting point of the deposited polymer to the end point d, the incident angle and the reflection angle in the polymer θ , The light reflected from the polymer surface ( ν 1) and light reflected through the polymer ( ν 2) the path difference is 2dcos θ Since this is equal to the integral multiple of the wavelength in the polymer, the following equation holds.

2dcos θ = m λ n (m = 0,1,2, ...) (2)

Substituting equation (1) into equation (2)

2dcos θ = m λ (3)

In equation (3) θ ≡ If 0

2nd = m λ (4)

Equation of

Therefore, the thickness of the deposited polymer can be known by calculating d using equation (4).

Referring to FIGS. 2, 5, and 6, a mirror using a laser or a point light source and a mirror using a low-permeability standard material on the opposite side is attached to the mirror as the frequency of use of the chamber increases. It can be seen that chamber conditions can be analyzed by analyzing the thickness of the deposited polymer. The laser may be a HeNe laser or an Ar laser. In addition, the area where the laser or point light source is incident may be changed within a certain range. In Fig. 6, reference numeral 12 denotes a chamber wall, 13 a mirror, and 14 denotes a deposited polymer.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes can be made in the art without departing from the technical spirit of the present invention. It will be apparent to those of ordinary knowledge.

According to the present invention, the use of a mirror, an electron beam injector and an Ar ion gun, an ion beam injector, a laser or point light source injector, an X-ray injector, etc. can be drastically reduced without changing the basic structure of existing equipment. This can reduce the equipment maintenance cost and reduce the device production cost.

Claims (22)

Analyze the composition of the material attached to the chamber wall by measuring the energy of the auger electrons emitted by the electron beam incident on the wall surface of the process chamber of the semiconductor device manufacturing apparatus, and then etching the material by using an Ar ion gun A method of monitoring a chamber state of a semiconductor device manufacturing apparatus for setting a cleaning cycle of a chamber by repeatedly performing a step of injecting an electron beam to monitor a deposition degree of the material deposited on a chamber wall. The method of claim 1, And the electron beam is incident on a wall surface of the chamber by using an electron beam incidence device focused to a size of thousands of microseconds attached to the chamber. The method of claim 1, And a mirror is provided on a wall surface of the chamber into which the electron beam is incident. The method of claim 3, The mirror is a chamber state monitoring method of a semiconductor device manufacturing apparatus, characterized in that formed in the analysis of the auger electrons emitted from the region where the electron beam is incident. The method of claim 1, And changing an incident position of the electron beam and a position of the Ar ion gun within a predetermined range in order to prevent the electron beam from being incident again in the region where the electron beam has already been analyzed and thinned. An apparatus for manufacturing a semiconductor device, in which a cleaning cycle of a chamber is set by analyzing a mass of secondary ions emitted by accelerating an ion beam incident on a wall of a process chamber of a semiconductor device manufacturing apparatus, and monitoring the deposition degree of a substance attached to the chamber wall. Chamber condition monitoring method. The method of claim 6, The ion beam is incident into the chamber by an ion beam accelerator attached to the chamber, and the emitted secondary ions are analyzed by mass using a secondary ion mass spectrometer attached to the chamber. Chamber condition monitoring method. The method of claim 6, And a mirror is provided on a wall surface of the chamber into which the ion beam is incident. The method of claim 8, The mirror is a chamber state monitoring method for a semiconductor device manufacturing apparatus, characterized in that formed in the mass analysis of the secondary ions emitted in the region where the ion beam is incident free of crosstalk. The method of claim 6, And changing the dice of the ion beam within a predetermined range in order to prevent the ion beam from being incident again in a region where the thickness of the ion beam has already been analyzed before. Analyze the photoelectrons emitted by injecting X-rays into the wall of the process chamber of the semiconductor device manufacturing apparatus, using a Ar ion gun to etch a predetermined thickness of the material deposited on the wall of the chamber and then incident X-rays again A chamber condition monitoring method of a semiconductor device manufacturing apparatus for setting a cleaning cycle of the chamber by monitoring the deposition degree of the material deposited on the chamber wall by performing. The method of claim 11, And the X-rays are incident on the wall surface of the chamber by using an X-ray incidence device attached to the chamber. The method of claim 11, The chamber state monitoring method of the semiconductor device manufacturing apparatus, characterized in that for installing the mirror on the wall surface of the chamber incident X-rays. The method of claim 13, The mirror is a chamber state monitoring method of a semiconductor device manufacturing apparatus, characterized in that formed in the analysis of the photoelectrons emitted in the region where the X-rays are incident. The method according to claim 11, The method for monitoring a chamber state of a semiconductor device manufacturing apparatus according to claim 1, wherein the position of the X-rays and the position of the Ar ion gun are changed within a predetermined range to prevent the X-rays from being incident again in the region where the thickness has already been analyzed. Chamber state monitoring of the semiconductor device manufacturing apparatus which sets the cleaning cycle of the chamber by measuring the intensity of the laser reflected on the wall of the process chamber of the semiconductor device manufacturing apparatus and measuring the deposition degree of the polymer deposited on the wall of the chamber. Way. The method of claim 16, The method of claim 1, wherein the intensity of the laser reflected by the polymer deposited on the chamber wall is reduced. The method of claim 16, Chamber state monitoring method of a semiconductor device manufacturing apparatus, characterized in that using the laser HeNe laser or Ar laser. After the laser or point light source is incident on the wall of the process chamber of the semiconductor device manufacturing apparatus, the cleaning cycle of the chamber is set by monitoring the deposition degree of the polymer on the wall of the chamber using the path difference of the reflected wave. Chamber condition monitoring method. The method of claim 19, The chamber state monitoring method of the semiconductor device manufacturing apparatus, characterized in that for setting the cleaning cycle of the chamber by monitoring the thickness of the polymer. The method of claim 19, Chamber state monitoring method of a semiconductor device manufacturing apparatus, characterized in that using the laser HeNe laser or Ar laser. The method of claim 19, The chamber state monitoring method of the semiconductor device manufacturing apparatus, characterized in that for changing the position of the region where the laser or point light source is incident within a predetermined range.