KR20000030983A - Aluminum thin film for aluminum electrolytic capacitor having doble dielectric layer - Google Patents
Aluminum thin film for aluminum electrolytic capacitor having doble dielectric layer Download PDFInfo
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- KR20000030983A KR20000030983A KR1019980046755A KR19980046755A KR20000030983A KR 20000030983 A KR20000030983 A KR 20000030983A KR 1019980046755 A KR1019980046755 A KR 1019980046755A KR 19980046755 A KR19980046755 A KR 19980046755A KR 20000030983 A KR20000030983 A KR 20000030983A
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- aluminum
- dielectric layer
- thin film
- aluminum thin
- electrolytic capacitor
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- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 50
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 239000010409 thin film Substances 0.000 title claims abstract description 33
- 239000003990 capacitor Substances 0.000 title claims abstract description 28
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000003980 solgel method Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 19
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 10
- 239000010955 niobium Substances 0.000 claims description 5
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims 1
- 150000004703 alkoxides Chemical class 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 229910003192 Nb–Ta Inorganic materials 0.000 abstract 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000003381 stabilizer Substances 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
본 발명은 알루미늄 전해 캐패시터의 제작에 필수적 구성요소인 알루미늄 박막에 관한 것으로서, 특히 알루미늄 박막에 형성된 산화 알루미늄(Al2O3) 유전체 상부에 sol-gel 법에 의해 산화 니오븀(Nb2O5) 또는 산화 탄탈륨(Ta2O5) 유전체층을 추가로 형성시켜 이를 이용하여 제작한 알루미늄 전해 캐패시터가 소형이면서 400 V 이상의 고전압과 500 MF/dm2이상의 고용량 특성을 갖도록 한 이중 유전체층을 갖는 알루미늄 전해 캐패시터용 알루미늄 박막에 관한 것이다.The present invention relates to an aluminum thin film, which is an essential component in the fabrication of an aluminum electrolytic capacitor, and in particular, niobium oxide (Nb 2 O 5 ) or by a sol-gel method on an aluminum oxide (Al 2 O 3 ) dielectric formed on an aluminum thin film. Titanium oxide (Ta 2 O 5 ) dielectric layer additionally formed by using the aluminum electrolytic capacitors aluminum aluminum electrolytic capacitors having a double dielectric layer having a small, high voltage of more than 400 V and high capacity of 500 MF / dm 2 It relates to a thin film.
알루미늄 전해 캐패시터는 99.9 ％ 이상의 고순도 알루미늄 박막을 전극으로 하여 제조된 캐패시터이다. 도 1은 알루미늄 전해 캐패시터의 제조 과정의 순서도이고, 도 2에 상기한 공정에 의해 만들어진 알루미늄 박막의 단면도로서, 각 공정을 설명하면 다음과 같다.An aluminum electrolytic capacitor is a capacitor manufactured using the high purity aluminum thin film of 99.9% or more as an electrode. FIG. 1 is a flowchart of a manufacturing process of an aluminum electrolytic capacitor, and is a cross-sectional view of an aluminum thin film made by the process described above with reference to FIG. 2.
전기화학적으로 알루미늄 박막의 표면을 에칭하여 실효면적을 증가시키는 에칭과정(S1), 에칭된 알루미늄 박막(1)을 화성액에 함침시키고 전기분해하여 알루미늄 박막의 표면에 유전체가 되는 산화 알루미늄(Al2O3) 피막(2)을 생성하는 화성과정(S2), 화성 과정을 거쳐 화성된 전극박을 제품의 용량에 맞는 일정한 규격으로 권취하고 인출단자를 접속한 후 전해지(separator)(3)와 음극박(4)을 넣어 동심원으로 절단하는 권취 과정(S3), 권취한 소자에 전해액을 넣는 함침 공정(S4), 함침된 소자를 밀봉시키고 외부에 캐패시터 특성을 표시하는 조립 공정(S5), 조립된 제품에 정격전압을 인가하여 특성을 안정화시키는 재화성 공정(S6)을 거쳐 알루미늄 전해 캐패시터를 완성하게 된다.In the etching process (S1) to increase the effective area by etching the surface of the aluminum thin film electrochemically, aluminum oxide (Al 2 ) which is impregnated with the chemical solution and electrolyzed to become a dielectric on the surface of the aluminum thin film (Al 2) O 3 ) Winding the electrode foil formed through the chemical conversion process (S2) and the chemical conversion process to produce the film (2) to a certain standard suitable for the capacity of the product, connecting the lead-out terminal, the separator (3) and the cathode Winding process (S3) to insert foil (4) into concentric circles, impregnation process (S4) to add electrolyte to the wound element, assembly process (S5) to seal the impregnated element and display capacitor characteristics on the outside, assembled The aluminum electrolytic capacitor is completed through the reprocessing process (S6) in which the rated voltage is applied to the product to stabilize the characteristics.
그러나 캐패시터의 전도도를 높이기 위한 유전체로 산화 알루미늄(Al2O3)만을 사용할 수 있기 때문에 용량 구현에 한계가 있고, 고압용 캐패시터를 제작하는 경우에는 캐패시터의 용량이 500 mF/dm2(400V 기준)로 제한되는 문제점이 있게 되었다. 또한, 이러한 고전압 대용량 캐패시터의 경우는 소자의 크기가 커지기 때문에 경박단소를 추구하는 최근의 전자기기를 제작하기 위해서는 많은 제약이 가해지게 되었다.However, since only aluminum oxide (Al 2 O 3 ) can be used as the dielectric to increase the conductivity of the capacitor, there is a limit in implementing the capacity. When manufacturing a high voltage capacitor, the capacity of the capacitor is 500 mF / dm 2 (400 V standard). There is a problem that is limited to. In addition, in the case of such a high-voltage large-capacity capacitor, since the size of the device is large, a lot of constraints have been applied to fabricate a recent electronic device in pursuit of light and small.
본 발명은 위와같은 문제점을 해소하기 위해 안출된 것으로, 알루미늄 전해 캐패시터의 제작에 사용되는 알루미늄 박막의 표면에 산화 알루미늄(Al2O3) 유전체를 형성시킨 후 그 상부에 sol-gel 법에 의해 유전체를 추가로 형성시켜 소형이면서 고용량, 고전압의 성능을 유지할 수 있는 이중 유전체층으로 형성되는 알루미늄 전해 캐패시터를 제공하는 것을 목적으로 한다.The present invention has been made to solve the above problems, an aluminum oxide (Al 2 O 3 ) dielectric is formed on the surface of the aluminum thin film used in the production of aluminum electrolytic capacitors, the dielectric by the sol-gel method thereon It is an object of the present invention to provide an aluminum electrolytic capacitor formed of a double dielectric layer capable of further maintaining a small capacity, high capacity, and high voltage performance by further forming a.
도 1은 일반적인 알루미늄 전해 캐패시터의 제조 공정을 나타내는 순서도.1 is a flowchart illustrating a manufacturing process of a general aluminum electrolytic capacitor.
도 2는 일반적인 알루미늄 전해 캐패시터용 알루미늄 박막의 단면도.2 is a cross-sectional view of an aluminum thin film for a general aluminum electrolytic capacitor.
도 3은 본 발명에 따른 이중 유전체층 형성 방법을 나타내는 순서도.3 is a flow chart showing a method of forming a double dielectric layer according to the present invention.
도 4는 본 발명에 따른 알루미늄 박막의 단면도.4 is a cross-sectional view of an aluminum thin film according to the present invention.
이하, 본 발명을 첨부된 도면들을 참조하여 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
본 발명 이중 유전체층으로 형성되는 알루미늄 전해 캐패시터는, 알루미늄 박막의 표면에 형성된 산화 알루미늄(Al2O3) 유전체 상부에 산화니오븀(Nb2O5) 또는 산화탄탈(Ta2O5) 유전체층이 추가로 형성되는 것을 특징으로 한다.The aluminum electrolytic capacitor formed of the double dielectric layer of the present invention further includes a niobium oxide (Nb 2 O 5 ) or tantalum oxide (Ta 2 O 5 ) dielectric layer on the aluminum oxide (Al 2 O 3 ) dielectric formed on the surface of the aluminum thin film. It is characterized by being formed.
도 3에 도시되어 있는 순서도를 참조하여 본 발명의 구성과 작용을 살펴보면 다음과 같다.Referring to the configuration and operation of the present invention with reference to the flow chart shown in Figure 3 as follows.
알루미늄 전해 캐패시터의 중요 구성요소인 알루미늄 박막(10)을 에칭한 후, 화성공정을 실시하여 알루미늄 박막의 에칭된 표면에 산화 알루미늄(Al2O3)(20) 유전체를 형성하는 것은 종래의 기술과 동일하다.The etching of the aluminum thin film 10, which is an important component of the aluminum electrolytic capacitor, and then performing a chemical conversion process to form an aluminum oxide (Al 2 O 3 ) 20 dielectric on the etched surface of the aluminum thin film is a conventional technique. same.
산화 알루미늄(Al2O3) 유전체(20)가 형성된 알루미늄 박막을 sol-gel 법에 의해 추가로 유전체층을 형성하도록 한다. 이때 추가의 유전체층을 형성하는 sol-gel 법은 다음과 같은 공정에 의해 실시된다.The aluminum thin film on which the aluminum oxide (Al 2 O 3 ) dielectric 20 is formed is further formed by the sol-gel method. At this time, the sol-gel method for forming an additional dielectric layer is carried out by the following process.
먼저 알루미늄 박막에 유전체를 형성시키기 위해 사용하는 sol 용액을 제조하는 sol 용액 제조 공정(S10)을 수행한다. 이때 제조되는 sol 용액은 금속 알콕사이드(Metal Alkoxide)계열의 용액으로서, 니오븀(Nb) - 알콕사이드 용액 또는 탄탈륨(Ta) - 알콕사이드 용액을 사용한다.First, a sol solution manufacturing process (S10) of manufacturing a sol solution used to form a dielectric on an aluminum thin film is performed. The prepared sol solution is a metal alkoxide-based solution, niobium (Nb)-alkoxide solution or tantalum (Ta)-alkoxide solution.
상기한 sol 용액을 상기 sol 용액 제조 공정(S10)에서 제조한 후, 만들어진 sol 용액에 에탄올, 메탄올 또는 부탄올과 같은 희석제를 넣어 필요한 농도를 맞추는 희석제 첨가 공정(S20)을 수행한 후, 반응 속도를 맞추기 위해 메틸 아세톤과 같은 안정제를 첨가하는 안정제 첨가 공정(S30)을 수행한다.After the sol solution is prepared in the sol solution manufacturing process (S10), the diluent such as ethanol, methanol or butanol is added to the prepared sol solution, and then a diluent addition process (S20) is performed to adjust the required concentration. A stabilizer addition process (S30) is performed in which a stabilizer such as methyl acetone is added to adjust.
안정제와 희석제를 넣은 sol 용액에 H20를 추가하는 가수분해 공정(S16)을 수행하고, 상기 가수분해 공정(S40)을 거친 sol 용액에 산화 알루미늄(Al2O3) 유전체가 형성된 알루미늄 박막을 함침시키는 알루미늄 박막 함침 공정(S50)을 수행한다.A hydrolysis process (S16) of adding H 2 0 to the sol solution containing the stabilizer and the diluent is performed, and the aluminum thin film on which the aluminum oxide (Al 2 O 3 ) dielectric is formed in the sol solution subjected to the hydrolysis process (S40). An aluminum thin film impregnation process (S50) to be impregnated is performed.
sol 용액에 함침되어 있는 알루미늄 박막을 꺼내어 표면에 sol 용액이 묻은 상태의 알루미늄 박막을 상온에서 48시간 건조하거나 또는 200℃ 내지 350 ℃ 의 온도로 20분 내지 40 분간 건조하는 건조 공정(S60)과 상기 건조 공정(S60)을 거친 알루미늄 박막을 550℃ 내지 650 ℃ 의 온도로 30 ~ 60 분간 열처리하는 열처리 공정(S70)을 거치게 되면 알루미늄 박막에 형성되어 있는 산화 알루미늄(Al2O3) 유전체층의 상부에는 사용된 sol 용액에 따라 산화 니오븀(Nb2O5) 또는 산화 탄탈륨(Ta2O5)과 같은 유전체 층(30)이 추가로 형성되어, 알루미늄 박막은 2개의 유전체층을 갖게 된다.Drying process (S60) and taking out the aluminum thin film impregnated in the sol solution and drying the aluminum thin film with the sol solution on the surface for 48 hours at room temperature or for 20 to 40 minutes at a temperature of 200 ℃ to 350 ℃ After the heat treatment step (S70) of heat-treating the aluminum thin film subjected to the drying step (S60) at a temperature of 550 ℃ to 650 ℃ for 30 to 60 minutes, the upper portion of the aluminum oxide (Al 2 O 3 ) dielectric layer formed on the aluminum thin film Depending on the sol solution used, a dielectric layer 30 such as niobium oxide (Nb 2 O 5 ) or tantalum oxide (Ta 2 O 5 ) is additionally formed, such that the aluminum thin film has two dielectric layers.
상기와 같은 공정에 의해 완성된 알루미늄 박막을 사용하여 캐패시터를 완성하기 위한 캐패시터 제작 공정은 종래의 기술과 동일하므로 여기서는 그 상세한 설명은 생략한다.The capacitor fabrication process for completing the capacitor using the aluminum thin film completed by the above process is the same as in the prior art, the detailed description thereof will be omitted here.
상기한 바와같이 알루미늄 전해 캐패시터의 알루미늄 박막에 형성되는 산화 알루미늄 유전체층의 상부에 sol-gel 법에 의해 산화 니오븀(Nb2O5) 또는 산화 탄탈륨(Ta2O5)과 같은 유전체 층을 추가로 형성시키게 되면, 이를 이용하여 완성된 알루미늄 전해 캐패시터는 이중 유전체층에 의해 400 V 이상의 고전압과 고용량 특성을 갖게되며, 캐패시터의 크기도 소형화 되는 효과를 갖게된다.As described above, a dielectric layer such as niobium oxide (Nb 2 O 5 ) or tantalum oxide (Ta 2 O 5 ) is further formed by the sol-gel method on the aluminum oxide dielectric layer formed on the aluminum thin film of the aluminum electrolytic capacitor. In this case, the aluminum electrolytic capacitor completed using the same has a high voltage and a high capacity of 400 V or more due to the double dielectric layer, and the size of the capacitor is also miniaturized.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100441854B1 (en) * | 2001-06-22 | 2004-07-27 | 파츠닉(주) | Making method of capacitor by using solid electrolyte |
| KR101629657B1 (en) | 2015-02-06 | 2016-06-13 | 한국과학기술원 | Micro power generation module |
| KR20160097157A (en) | 2016-03-30 | 2016-08-17 | 한국과학기술원 | Micro power generation module |
-
1998
- 1998-11-02 KR KR1019980046755A patent/KR20000030983A/en not_active Application Discontinuation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100441854B1 (en) * | 2001-06-22 | 2004-07-27 | 파츠닉(주) | Making method of capacitor by using solid electrolyte |
| KR101629657B1 (en) | 2015-02-06 | 2016-06-13 | 한국과학기술원 | Micro power generation module |
| KR20160097157A (en) | 2016-03-30 | 2016-08-17 | 한국과학기술원 | Micro power generation module |
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