KR20000021407A - Thin film forming apparatus having collimator core - Google Patents

Abstract

PURPOSE: A thin film forming apparatus having a collimator core is to prevent the collimator core from being curved during a plasma discharge at a high temperature and to thereby prevent metal particles passing through the collimator core from being incident with an inclination. CONSTITUTION: A thin film forming apparatus comprises a circular collimator core(110)having a unit structure(112) of the honeycomb, and established in a reactor chamber. The collimator core comprises a circular plate(120) coupled along the circular edge of the circular collimator core and having a diameter greater than the diameter of the collimator core. The circular plate has a stepped structure and comprises an upper portion(122) and a lower portion(124). An ellipsoidal through a hole(126) is formed along the lower portion. The collimator core is installed at a shield of the reactor chamber. Metal particles generated from the plasma discharge pass through the collimator core and the underlying circular plate and are incident with directionality into a wafer on an electrode.

Description

Sputtering apparatus with collimator core

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a collimator core through which particles pass while a metallic particle separated from a target by a plasma discharge is deposited on a surface of a wafer. The present invention relates to a thin film forming apparatus including a reaction chamber including a reaction chamber.

The thin film forming apparatus is a device for forming a thin film by depositing metal particles on the surface of the wafer. For this purpose, a high temperature plasma discharge is formed between a target from which the metal particles are discharged and an electrode on which the wafer is placed. A tool such as a collimator core is also used to ensure that the particles ejected from the target are deposited at an angle of about 90 ° onto the wafer.

1 is a plan view showing a conventional collimator core 10, Figure 2a is a cross-sectional view showing a reaction chamber 100 equipped with a collimator core of Figure 1, Figure 2b shows the bending of the collimator core (10 '). It is a schematic diagram. Referring to FIGS. 1 to 2B, the structure of the collimator core 10 and the structure of the reaction chamber 100 including the collimator core will be briefly described as follows.

The collimator core 10 has a honeycomb unit structure 12 (Honeycomb) arranged in a plane and is generally circular.

The collimator core 10 is placed on the shield 62 in the reaction chamber 100, the target 50 is positioned above the collimator core, and the electrode 40 on which the wafer 30 is placed below the collimator core is provided. Located. The body 60 of the reaction chamber surrounding the collimator core 10, the shield 62, the target 50 and the electrode 40 blocks them from the outside, and a high temperature plasma discharge inside the reaction chamber 100 ( Particles 52 are deposited onto the wafer 30 from the target through A). The particles 52 are discharged from the target with disordered directionality, and only certain particles having directionality passing through the collimator core while passing through the collimator core 10 may be selectively deposited onto the wafer.

At this time, the inside of the reaction chamber due to the high temperature plasma discharge (A), the collimator core (10 ') receives heat, it may occur as shown in Figure 2b, the collimator core 10' is bent as the collimator core 10 ' Passing particles 52 ′ may be deposited by bending the collimator core over the wafer by an angle.

In addition, when the collimator core has a large degree of warpage due to high temperature plasma discharge, the diameter of the collimator core decreases in the horizontal plane, and the collimator core may fall on the wafer and the wafer may be damaged as the portion over the shield slides on the shield. have.

The present invention provides a thin film forming apparatus which prevents the collimator core from being bent by high temperature plasma discharge.

It is still another object of the present invention to provide a thin film forming apparatus having a collimator core including an integrated frame.

1 is a plan view showing a conventional collimator core,

Figure 2a is a cross-sectional view showing a reaction chamber equipped with a collimator core of Figure 1,

Figure 2b is a schematic diagram showing the bending of the collimator core,

3 is a plan view showing a collimator core according to an embodiment of the present invention,

4 is an enlarged plan view illustrating a portion B of FIG. 3;

5 is a cross-sectional view showing a reaction chamber equipped with a collimator core of FIG.

FIG. 6 is an enlarged cross-sectional view of part C of FIG. 5.

Description of the main parts of the drawing

10, 10 ', 110: collimator core

12, 112: unit structure 30, 130: wafer

40, 140: electrode 50, 150: target

52, 52 ', 152: Particle 60, 160: Body

62,162: Shield A: Plasma Region

100, 200: reaction chamber 120: integrated frame

122: top edge 124: bottom edge

In order to achieve the above object, the present invention provides a thin film forming apparatus including a reaction chamber having a circular collimator core in which honeycomb unit structures are arranged in a plane, wherein the collimator core is a unit along a circular periphery. It provides a thin film forming apparatus comprising a; integral frame formed to the thickness of the structure. In addition, at least two protrusions are formed along the point where the edge of the collimator core is supported in the reaction chamber, and elliptical holes are formed in the edge of the collimator core to accommodate each protrusion.

The reaction chamber equipped with a collimator core according to the present invention includes an electrode on which a wafer is placed; A metallic target spaced apart from the electrode; A collimator core positioned between the electrode and the target; And a body sealing the electrode, the target, and the collimator core from the outside, and depositing particles of the target onto the wafer using plasma discharge in the reaction chamber.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

3 is a plan view of the collimator core 110 according to an embodiment of the present invention, Figure 4 is an enlarged plan view of the portion B of FIG. Looking at the structure of the collimator core according to the present invention with reference to Figures 3 and 4 as follows.

The collimator core 110 is a honeycomb unit structure 112 is arranged in a plane and forms a circle as a whole. In addition, the collimator core 110 according to the present invention is formed with an integral edge 120 in a constant width along the circumference of the circle at the bottom of the circle.

The constant width of the unitary frame 120 may be formed to be equal to or smaller than the thickness of each unit structure of the collimator core, the unitary frame 120 is again formed with a step to the top 122 and the bottom 124, At least two elliptical holes 126 are formed along the bottom 124.

Unlike conventional collimator cores, the collimator core according to the present invention includes an integrated edge formed at the top and bottom of the collimator core by the edge having a constant width even when plasma discharge is performed in the reaction chamber. Direction, and as the bottom of the unitary rim is formed with a larger diameter than the top, the degree of warpage of the collimator core can be significantly reduced.

5 is a cross-sectional view of the reaction chamber 200 provided with the collimator core 110 of FIG. 3, and FIG. 6 is an enlarged cross-sectional view of part C of FIG. 5. 5 and 6, the structure of the reaction chamber 200 equipped with the collimator core 110 according to the present invention will be described below.

The collimator core 110 is placed on the shield 162 in the reaction chamber 200, the target 150 is positioned above the collimator core, and the electrode 140 on which the wafer 130 is placed below the collimator core is positioned. . The body 160 of the reaction chamber surrounding the collimator core 110, the shield 162, the target 150, and the electrode 140 blocks them from the outside, and a high-temperature plasma discharge inside the reaction chamber 200 ( Through A) particles 152 are deposited onto the wafer 130 from the target. Particles 152 exit the target with disordered directionality, and only certain particles of directionality passing through the collimator core 110 while passing through the collimator core 110 may be selectively deposited onto the wafer.

The structural feature of the reaction chamber 200 according to the present invention is that protrusions 164 corresponding to the elliptical hole 126 of the collimator core are formed along the shield 162 through which the collimator core 110 is spread.

As shown in FIG. 6, the oval hole 126 of the unitary edge bottom 124 is formed long in the direction of the center of the collimator core 110, and thus the protrusions required when the collimator core 110 is slightly bent ( The clearance with the 164 may be accommodated, and the collimator core 110 may be prevented from slipping on the shield 162 even if the degree of bending increases. That is, as the protrusion 164 and the elliptical hole 126 are fitted, no matter how much the collimator core is bent, it is possible to prevent the wafer from being damaged by slipping on the shield and falling down on the wafer.

According to the structure of the collimator core and the corresponding reaction chamber having the above structure, it is possible to prevent the collimator core from bending by the plasma discharge, through which the metal particles of the target passing through the collimator core are about 90 ° above the surface of the wafer. It may be deposited in the direction of. In addition, by forming an elliptical hole with at least two pairs of protrusions along the point where the collimator core is placed, it is possible to prevent the collimator core from slipping on the shield to prevent damage to the wafer.

As described above, in order to prevent the collimator core from bending due to high temperature, the structure of the collimator core having an integrated border is not limited to the thin film forming apparatus illustrated in the present invention, and may be freely applied within the scope of the technical idea of the present invention. It can be obvious.

A thin film forming apparatus having a collimator core according to the present invention is characterized by a structure of a collimator core having an integrated edge having a step at the top and a bottom thereof, an elliptical hole formed at the bottom of the edge, and a reaction chamber having a protrusion of a shield corresponding thereto. According to this structural feature, the collimator core can be prevented from bending at high temperatures through plasma discharge and the like, and the metal particles penetrating the collimator core can be prevented from being deposited at an angle on the wafer as the collimator core is warped. . In addition, it is possible to prevent the collimator core from slipping on the shield by using the elliptical hole of the collimator core rim and the corresponding protrusion of the shield to prevent damage to the wafer.

Claims (4)

In the thin film forming apparatus comprising a reaction chamber provided with a circular collimator core in which the honeycomb unit structure is arranged in a plane, And the collimator core has an integral edge formed to have a thickness of the unit structure along the circumference of the circle. The method of claim 1, wherein at least two protrusions are formed along the point where the edge of the collimator core is supported in the reaction chamber, and the elliptical holes are formed in the edge of the collimator core to accommodate each protrusion. Thin film forming apparatus characterized by the above-mentioned. The method of claim 2, wherein the reaction chamber An electrode on which the wafer is placed; A metallic target spaced apart from the electrode; A collimator core positioned between the electrode and the target; And A body sealing the electrode, the target, and the collimator core from the outside; And depositing particles of the target onto the wafer using plasma discharge in the reaction chamber. 4. The apparatus of claim 3, wherein the particles are deposited at an angle of about 90 [deg.] Over the surface of the wafer while selectively passing through the collimator core.