JPS58107483A - Vapor deposition apparatus - Google Patents

Abstract

PURPOSE:To impart a structure for intercepting vapor deposition particles obliquely injected toward a wafer to the titled apparatus, by a method wherein an arranging part for arranging the wafer is provided to a wafer holder while a barrier wall encircling the peripheral thereof is provided and an protruded shield plate is arranged to the inner wall surface of said barrier wall. CONSTITUTION:To the surface of a wafer holder 6 having a wafer arranging part 9 provided thereto, a cylindrical barrier wall 10 comprising a material such as stainless steel or Al is vertically provided so as to encircle the arranging part 9. To the inner wall surface of the barrier wall 10, plural shield plates protruded from said inner wall surface and inclined to the side of the wafer holder 6 are provided. Therefore, obliquely injected vapor deposition particles are obliquely intercepted by the cylindrical barrier wall 10 and does not reach the wafer 5. In addition, among the particles injected into the barrier wall 10, particles reflected by said wall 10 are prevented from reaching the wafer by the shield plates 11. By this mechanism, a lift-off pattern with a good pattern edge can be formed.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention particularly relates to a wafer holder for a vapor deposition apparatus when a circuit pattern such as a digital integrated circuit is created by a lift-off method.

(2) Prior Art and Problems The 7-to-7 method is widely used as one method for forming circuit patterns such as integrated circuits on a substrate. FIG. 1 shows the manufacturing process when a pattern is formed by the lift-off method. A patterned resist 2 is formed on the substrate 1 by applying a resist such as an AZ resist to the entire surface of the substrate 1, exposing a desired pattern to ultraviolet light using a photomask, and developing it (see Fig. 1). (A) ) o Next, a material such as metal is deposited on the entire surface of the substrate 1 and the resist 2 to form a deposited layer 3 (FIG. 1(b)). For Jiren Sefson integrated circuit taste,
A lead (Pb) alloy or silicon monoxide (S:O) material is deposited. Finally, by lift-off using a solvent that dissolves the resist 2, acetone in the case of AZ resist, only the vapor deposited layer 3 on the resist 2 is removed together with the resist, and a desired pattern can be formed on the substrate 1 (1111 Figure (C)).

However, in reality, when forming the vapor deposition layer 3 on the substrate, the vapor deposition material 3 also adheres to the @ surface of the resist pattern 2, as shown in FIG. This is due to the inclination of the surface of the resist 211, oblique incidence of the Fi vapor deposited particles, or scattering by the substrate. When the vapor deposition material adheres to the side surface of the resist in this manner, the pattern shape of the lift-off method produces protrusions at the pattern edges as shown in FIG. This is because when multiple deposited layers are stacked, step coverage at the protrusion becomes poor, leading to problems such as wire breakage and short circuits.

Therefore, in order to solve the above problem, the cross-sectional shape of the resist pattern was made into an overhanging shape as shown in FIG. As methods for forming this, methods such as forming with two layers of resist, forming a two-layer structure of resist and metal, and chlorobenzene treatment have been proposed.
Particularly in the manufacture of Josephnon integrated circuits, the third chlorobenzene treatment method is often used because of its relatively simple process and excellent reproducibility.

By using such an overhang-like resist pattern, the reproducibility of the lift-off method has been greatly improved, but the oblique incidence of deposition particles and particles scattered by the substrate and walls of the evaporation equipment under the overhang can cause problems. It was not possible to completely eliminate the interference.

Next, a conventional vapor deposition apparatus will be explained.
FIG. 5 shows a schematic cross section of a conventional vapor deposition apparatus. Fifth
In the figure, 4 is a chamber, 5 is a wafer, 6 is a wafer holder, 7 is a shutter, and 8 is a resistance heating vapor deposition material storage boat.

In this device, the vapor deposition material is stored in the boat 8, and
Here, the vapor deposition particles are blown off by heating with a resistance heating method, and with the shutter 7 open, the vapor deposition particles are vapor-deposited onto the wafer 5 supported by the wafer holder 3 placed opposite the boat 8. .

There are various shapes of conventionally used wafer holders, and FIG. 6 shows a perspective view (a) and a cross-sectional view (b) of a conventionally commonly used wafer holder.

The wafer holder 6 is provided with several wafer placement portions 9 on which wafers 5 are placed.

However, with a wafer holder having such a structure, even if an overhang-like resist layer is formed on the substrate as shown in Figure M4, the light will not be incident on the wafer 5 obliquely, so This has the disadvantage that a good lift-off pattern edge cannot be obtained because of the wraparound.

(3) Object of the Invention An object of the present invention is to provide a vapor deposition apparatus having a structure that blocks vapor deposition particles obliquely incident on a wafer.

(4) Structure of the Invention The present invention provides a vapor deposition apparatus including a wafer holder for supporting a wafer, in which the phenol holder is provided with an installation part for placing the wafer, a barrier is provided surrounding the installation part, and a barrier is provided to surround the installation part. A shielding plate is arranged that protrudes from the inner wall surface of the barrier.

(5) Example of the Invention The present invention will be explained below using an example of the present invention. FIG. 7 is a partial sectional view of a wafer holder in one embodiment of the present invention.

The same parts as those explained in FIGS. 6(a) and (b) are indicated by the same symbols.

The wafer holder of this embodiment is provided with a cylindrical tube 10 made of a material such as stainless steel or aluminum that surrounds the installation part 9 perpendicularly to the surface of the wafer holder 6 on which the wafer installation (IIM 9) is provided, and further includes a cylindrical tube 10 made of a material such as stainless steel or aluminum. The inner periphery of the inner wall has a structure in which several oblique plates 11 are provided that protrude from the surface of the inner wall and are inclined toward the wafer holder 6@ toward the tip of the protrusion.

According to this embodiment, the vapor deposition particles incident obliquely are obliquely blocked by the cylindrical tube lO and do not reach the wafer 5. Moreover, among the particles incident on the inside of the cylinder 10, particles reflected by the inner wall of the cylinder 10 can be prevented from reaching the wafer 5 by the inclined oblique plate 11. Thereby, it is possible to completely prevent the vapor deposited particles from going around under the overhang of the overhang-like resist, and it is possible to form a lift-off pattern with good reproducibility and a good pattern edge.

(6) Effects of the Invention According to the present invention, during vapor deposition, it is possible to prevent vapor deposition particles from being scattered on the inner wall of the apparatus and obliquely incident on the wafer, so that it is possible to prevent vapor deposition particles from being obliquely incident on the wafer. When a pattern is formed by the lift-off method, a lift-off pattern with high reproducibility and a good pattern edge shape can be formed.

FIG. 4 is a cross-sectional view of the substrate showing the illumination point, FIG. 4 is a cross-sectional view of the substrate showing a resist pattern having an overhang structure, and FIGS.
The figure is a sectional view of a wafer holder in one embodiment of the present invention.

2 Resist 9 Queue installation part 3 Vapor deposition layer 10 Cylindrical tube 5 Wafer
11 Swash plate 6 Wafer holder diagram

Claims (1)

[Claims] In a vapor deposition apparatus including a wafer holder that supports a wafer, the wafer holder is provided with an installation part for placing the wafer, a barrier is provided surrounding the installation part, and a barrier protrudes from the inner wall surface of the barrier. A vapor deposition apparatus characterized by disposing a shielding plate.