KR20000019269A - Method for forming dielectric layer of high capacity using exmet to sol-gel method - Google Patents
Method for forming dielectric layer of high capacity using exmet to sol-gel method Download PDFInfo
- Publication number
- KR20000019269A KR20000019269A KR1019980037275A KR19980037275A KR20000019269A KR 20000019269 A KR20000019269 A KR 20000019269A KR 1019980037275 A KR1019980037275 A KR 1019980037275A KR 19980037275 A KR19980037275 A KR 19980037275A KR 20000019269 A KR20000019269 A KR 20000019269A
- Authority
- KR
- South Korea
- Prior art keywords
- exmet
- sol
- dielectric
- dielectric layer
- gel method
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000003980 solgel method Methods 0.000 title claims abstract description 11
- 230000007062 hydrolysis Effects 0.000 claims abstract description 10
- 238000006460 hydrolysis reaction Methods 0.000 claims abstract description 10
- 238000005470 impregnation Methods 0.000 claims abstract description 8
- 239000003989 dielectric material Substances 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 23
- 229910052782 aluminium Inorganic materials 0.000 abstract description 23
- 239000003990 capacitor Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000011888 foil Substances 0.000 description 18
- 239000000126 substance Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
본 발명은 sol-gel법에 의하여 알루미늄 전해커패시터를 제조할 때 유전용량을 확대하여 제조하는 방법에 관한 것으로서, 익스메트(Exmet)를 사용하여 유전체층 표면적을 확대시켜 유전용량을 확대하는 방법에 관한 것이다.The present invention relates to a method of increasing the dielectric capacity when manufacturing an aluminum electrolytic capacitor by the sol-gel method, and to a method of expanding the dielectric capacity by expanding the surface area of the dielectric layer by using an Exmet (Exmet). .
알루미늄 전해 콘덴서는 99.9% 이상의 고순도 알루미늄박막을 전극으로 하여 제조된 콘덴서로서, 그 공정을 살펴보면 다음과 같다.An aluminum electrolytic capacitor is a capacitor manufactured by using a high purity aluminum thin film of 99.9% or more as an electrode. The process is as follows.
전기화학적으로 알루미늄 박막의 표면을 에칭하여 실효면적을 증가시키는 에칭과정, 에칭된 알루미늄 박막을 화성액에 함침시키고 전기분해하여 알루미늄 박막의 표면에 유전체가 되는 산화 알루미늄 피막을 생성하는 화성과정, 상기 화성 과정을 거쳐 화성된 전극박을 제품의 용량에 맞는 일정한 규격으로 절단하고 인출단자를 접속한 후 음극박과 전해지(separator)를 넣어 동심원으로 절단하는 절단 과정, 권취한 소자에 전해액을 넣는 함침 공정, 함침된 소자를 밀봉시키고 외부에 콘덴서 특성을 표시하는 조립 공정, 조립된 제품에 정격전압을 인가하여 특성을 안정화시키는 재화성 공정으로 크게 나누게 된다.An etching process of electrochemically etching the surface of the aluminum thin film to increase the effective area, a chemical conversion process of impregnating the etched aluminum thin film into the chemical solution and electrolyzing to produce an aluminum oxide film that becomes a dielectric on the surface of the aluminum thin film, the chemical composition Process of cutting the electrode foil, which has been formed through the process, to a certain standard suitable for the capacity of the product, connecting the lead-out terminal, cutting the electrode foil and the electrolytic cell into a concentric circle, and impregnating the electrolyte into the wound element; It is divided into the assembly process of sealing the impregnated element and displaying the characteristics of the capacitor on the outside, and the reprocessing process of applying the rated voltage to the assembled product to stabilize the characteristic.
이상과 같은 공정에 화성액에 함침시켜 유전체를 형성하는 방법을 사용하여 이용하는 것을 내용으로 하는 것이며, 이러한 유전체를 형성하는 방법을 개선하여 sol-gel법을 사용하기도 한다.In the above process, the method of forming a dielectric by impregnating the chemical solution is used. The method of forming such a dielectric is improved to use the sol-gel method.
전술한 sol-gel 법에 의한 알루미늄 호일상의 유전체 생성방법은, 알루미늄 호일에 유전체를 형성시키는 위한 sol 용액을 제조하는 sol 용액 제조 공정, 상기 공정에서 만들어진 sol 용액에 희석제를 넣어 필요한 농도를 맞추는 희석제 첨가 공정, 반응 속도를 맞추기 위해 안정제를 첨가하는 안정제 첨가 공정, sol 용액에서 유전체 물질을 생성하기 위한 가수분해 공정, 상기 가수분해 공정을 거친 sol 용액을 알루미늄 호일에 함침시키는 Sol 용액 함침 공정, sol 용액이 묻은 알루미늄 호일을 상온에서 48시간 또는 200℃ 내지 350 ℃ 의 온도로 건조하는 건조 공정, 상기 건조 공정을 거친 알루미늄 호일을 550℃ 내지 650 ℃ 의 온도로 열처리하는 열처리 공정으로 구성되어 있는데, 상기 가수분해 공정을 거친 sol 용액을 알루미늄 호일에 함침시키는 Sol 용액 함침 공정에서 유전체층의 표면적은 알루미늄 포일의 면적에 비례하기 때문에 알루미늄 포일의 면적에 따라 유전용량에 제한이 생긴다.In the above-described method of generating a dielectric on an aluminum foil by the sol-gel method, a sol solution manufacturing process for preparing a sol solution for forming a dielectric on an aluminum foil, and a diluent for adding a diluent to a sol solution made in the above process to meet a required concentration Addition process, stabilizer addition process to add stabilizer to match reaction rate, hydrolysis process to produce dielectric material in sol solution, Sol solution impregnation process to impregnate sol solution after hydrolysis process in aluminum foil, sol solution It is composed of a drying step of drying the embedded aluminum foil at room temperature for 48 hours or a temperature of 200 ℃ to 350 ℃, and a heat treatment step of heat-treating the aluminum foil subjected to the drying process at a temperature of 550 ℃ to 650 ℃, Sol solution impregnation to impregnate the sol solution after the decomposition process into aluminum foil Since the surface area of the dielectric layer in the process is proportional to the area of the aluminum foil, the dielectric capacity is limited depending on the area of the aluminum foil.
본 발명은 전술한 문제점을 해결하기 위하여 안출한 것으로서, 함침의 모재로 쓰이는 알루미늄 포일 대신에 익스메트(Exmet)를 사용하여 보다 넓은 표면적을 얻어서 유전용량을 증대시키고자 하는 목적을 가지고 있다.The present invention has been made to solve the above-mentioned problems, and has an object of increasing dielectric capacity by obtaining a larger surface area using Exmet instead of an aluminum foil used as a base material for impregnation.
본 발명은 전술한 목적을 달성하기 위하여 sol-gel 법으로 유전체층을 형성함에 있어서, sol 용액에서 유전체 물질을 생성하기 위한 가수분해 공정 후에 가수분해 공정을 거친 sol 용액에 메쉬(mesh)형태의 익스메트(Exmet)에 함침시키는 함침공정을 포함하는 것을 특징으로 하는 sol-gel 법에 Exmet를 사용한 유전체층 형성방법을 제공한다.The present invention is to form a dielectric layer by the sol-gel method in order to achieve the above object, in the form of a mesh (mesh) in the sol solution subjected to the hydrolysis process after the hydrolysis process for producing a dielectric material in the sol solution Provided is a dielectric layer forming method using Exmet in a sol-gel method comprising an impregnation process in which (Exmet) is impregnated.
본 발명의 구성 및 작용을 상세히 설명하면 다음과 같다.Referring to the configuration and operation of the present invention in detail.
sol-gel 법에서 sol 용액에서 유전체 물질을 생성하기 위한 가수분해 공정 다음에 있는 가수분해 공정을 거친 sol 용액을 알루미늄 호일에 함침시키는 Sol 용액 함침 공정에서 알루미늄 포일 대신에 익스메트(Exmet)로 대체한다. 상기 익스메트는 일종의 망처럼 mesh형태로 되어 있으므로 sol용액을 함침 시킬 때 알루미늄 포일에 비해 많은 양의 유전체 재료를 코팅할 수 있다. 이러한 함침공정 후의 공정은 종래의 sol-gel법과 같다.The sol-gel method replaces aluminum foil with exmet instead of aluminum foil in the sol solution impregnation process, where the hydrolysis process followed by hydrolysis to produce dielectric material in sol solution is immersed in aluminum foil. . Since the exmet is a mesh like a net, it can coat a large amount of dielectric material when compared to aluminum foil when the sol solution is impregnated. The process after such an impregnation process is the same as the conventional sol-gel method.
이와같이 메쉬형태의 익스메트에 고유전체물질이 함침되어 코팅되므로 알루미늄 포일에 비해서 단위면적당 유전체층을 보다 많이 코팅할수 있다.In this way, the high-k dielectric material is impregnated and coated on the mesh-type exmet to coat more dielectric layers per unit area than aluminum foil.
이상에서 보듯이 본 발명은 알루미늄 포일에 비해 단위 면적당 유전체층을 보다 많이 코팅하여 유전체층의 양이 많아 지므로서 알루미늄 포일의 정전용량 보다 큰 고체 전해질 커패시터를 제조할수 있는 효과가 있다.As described above, the present invention has the effect of manufacturing a solid electrolyte capacitor larger than the capacitance of the aluminum foil by increasing the amount of the dielectric layer by coating more dielectric layers per unit area than the aluminum foil.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980037275A KR20000019269A (en) | 1998-09-10 | 1998-09-10 | Method for forming dielectric layer of high capacity using exmet to sol-gel method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980037275A KR20000019269A (en) | 1998-09-10 | 1998-09-10 | Method for forming dielectric layer of high capacity using exmet to sol-gel method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20000019269A true KR20000019269A (en) | 2000-04-06 |
Family
ID=19550142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980037275A KR20000019269A (en) | 1998-09-10 | 1998-09-10 | Method for forming dielectric layer of high capacity using exmet to sol-gel method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20000019269A (en) |
-
1998
- 1998-09-10 KR KR1019980037275A patent/KR20000019269A/en not_active Application Discontinuation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3093883A (en) | Manganese dioxide | |
US4105513A (en) | Solid electrolyte capacitor having metallic cathode collector in direct contact with manganese dioxide electrolyte and method of producing same | |
JP3296727B2 (en) | Method for manufacturing solid electrolytic capacitor | |
US3397446A (en) | Thin film capacitors employing semiconductive oxide electrolytes | |
JPH04112519A (en) | Manufacture of solid electrolytic capacitor | |
US3302074A (en) | Capacitor with solid oxide electrolyte pyrolytically produced in wet atmosphere | |
US3241008A (en) | Formation of electrode | |
KR20000019269A (en) | Method for forming dielectric layer of high capacity using exmet to sol-gel method | |
JP3339511B2 (en) | Method for manufacturing solid electrolytic capacitor | |
US3270254A (en) | Electrical capacitors and method of making the same | |
JPH0785461B2 (en) | Capacitor | |
JP2000068160A (en) | Ta SOLID ELECTROLYTIC CAPACITOR AND ITS MANUFACTURE | |
JP3092512B2 (en) | Method for manufacturing solid electrolytic capacitor | |
US3255390A (en) | Electrical capacitor | |
US3467895A (en) | Manganous nitrate-catalytic agent solution for solid electrolyte capacitor | |
KR100339754B1 (en) | Making method of aluminium electrolytic capacitor | |
JPH04137517A (en) | Manufacture of solid electrolytic capacitor | |
US3311797A (en) | Electrolytic capacitor including heat resistant spacer containing the electrolyte and method of making same | |
JPS62185307A (en) | Solid electrolytic capacitor | |
KR100280291B1 (en) | Dielectric crack recovery method of aluminum thin film for aluminum electrolytic capacitor | |
US4672512A (en) | Solid electrolytic capacitor | |
JPS622519A (en) | Manufacture of solid electrolytic capacitor | |
KR20000014156A (en) | Method for forming dielectric layer of foil used for electrolytic capacitor | |
JPH05205980A (en) | Manufacture of solid electrolytic capacitor | |
JPH0314220B2 (en) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |