KR20000014580A - New photoresist polymer and photoresist compound using the polymer - Google Patents

Abstract

PURPOSE: A new photoresist polymer and photoresist compound using the polymer is provided, which suits an optical lithography progress using a KrF(249nm) and a ArF(193nm) optical source when manufacturing a micro circuit of a high integrated semiconductor device. CONSTITUTION: The new photoresist polymer comprises: a bicycloalkene composed by a chemical formula 2; and a maleic anhydride by a chemical formula 3 or a maleimide derivative by a chemical formula 4, wherein the bicycloalkene is selected from a group including a 2-hydroxyethyl 5-norbone-2-carboxylrate, a t-butyl5-norbune-2-carboxylrate, and a 5-norbone-2-carboxylsan, and R1 of the chemical formula 4 is selected from a group including a methyl, an ethyl, a butyl and a propyl. Thereby, it is possible to use 2.38 percent a TMAH aqueous solution as a developer.

Description

Novel photoresist polymer and photoresist composition using the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoresist polymer used in semiconductor manufacturing and a photoresist composition using the same, and more particularly, to photolithography using KrF (249 nm) or ArF (193 nm) light sources in the manufacture of microcircuits of highly integrated semiconductor devices. It relates to a photoresist polymer suitable for the process and a photoresist composition using the same.

In order to achieve high sensitivity in the microfabrication process of semiconductor manufacturing, chemically amplified deep ultra violet (DUV) photoresist has recently been spotlighted, and its composition is sensitive to photoacid generator and acid. It consists of a matrix polymer of a structure that reacts.

The action mechanism of the photoresist generates an acid when the photoacid generator receives ultraviolet rays from a light source, and as a result of the decomposition or crosslinking of the main chain or side chain of the matrix polymer by the acid generated as described above, the polarity of the polymer is greatly changed and exposed. The part and the non-exposed part have a dissolution difference with respect to the developer. By using this solubility difference, a predetermined pattern is formed.

In such lithography, the resolution depends on the wavelength of the light source.

As the field becomes smaller, fine patterns can be formed.

In general, photoresist (hereinafter referred to as PR) has excellent etching resistance and heat resistance.

And adhesion is required, and in addition, the photoresist used as the ArF photoresist film must satisfy various conditions such as being developable in 2.38% aqueous tetramethylammonium hydroxide (TMAH) solution. It is very difficult to synthesize satisfactory polymers. For example, the synthesis of a polymer having a main chain of polyacrylate is easy, but there are problems in securing etching resistance and developing process. In order to secure the etching resistance, a method of adding an aliphatic cyclic unit into the main chain may be considered. However, even in this case, it is very difficult for the main chain to be composed of all aliphatic rings.

In an attempt to solve the above problems, a polymer having a structure represented by the following Chemical Formula 1, in which the main chain is substituted with noborane, acrylate, and maleic anhydride, was developed in Bell Labs.

<Formula 1>

However, this resin has a problem that the maleic anhydride moiety (A) used to polymerize aliphatic cyclic olefin groups is very well soluble in 2.38% TMAH even when unexposed. Therefore, in order to suppress the dissolution of the polymer in the non-exposed part, the proportion of the Y-substituted part of t-butyl should be increased, but the proportion of the Z part which increases the adhesion with the lower layer is relatively reduced. Therefore, PR is likely to fall from the substrate during patterning.

To improve this, Bell Labs put cholesterol-based dissolution inhibitors in two-component systems. However, since the added dissolution inhibitor is a very large amount of 30% of the resin by weight ratio, there are many problems in using it as a PR resin, such as poor reproducibility and an increase in manufacturing cost. (Journal of photopolymer science and Technology Vol. 10, No 3,511-5209 (1997)

It is an object of the present invention to provide a novel photoresist polymer having etch resistance, heat resistance and adhesion suitable for a photoresist process using deep ultra violet (hereinafter referred to as DUV) and a method of manufacturing the same.

Another object of the present invention is to provide a photoresist composition using the novel photoresist polymer and a method of manufacturing the same.

In order to achieve the above object, the present invention discloses a polymer of (a) a bicycloalkene of formula (2) and (b) maleic anhydride of formula (3) or a maleimide derivative of formula (4).

<Formula 2>

Wherein R is hydrogen, substituted or unsubstituted straight or branched chain alkyl or alcohol having 1 to 10 carbon atoms, and n is 1 or 2.

<Formula 3>

<Formula 4>

Wherein R 1 is hydrogen or substituted or unsubstituted straight or branched alkyl having 1 to 10 carbon atoms.

The inventors have focused on the fact that maleimide derivatives and bicyclic alkene derivatives incorporating functional groups have excellent adhesion to a substrate and excellent etching resistance, thereby synthesizing a polymer having a structure in which these compounds are included in the main chain. Since the synthesized new polymer is insoluble in etching resistance, heat resistance and adhesion as well as 2.38% of TMAH developer, it also serves to prevent non-exposed sites from dissolving in the developer.

The novel photoresist polymers according to the invention preferably have a molecular weight of 3,000 to 100,000.

In the monomer used for the polymerization, Formula 2 is a bicyclic alkene wherein R is hydrogen, 2-hydroxyethyl, t-butyl, n is 1, for example, 2-hydroxyethyl 5-norbornene- It is more preferable that it is 2-carboxylate, t-butyl 5-norbornene-2-carboxylate, or 5-norbornene-2-carboxylic acid. In formula (4), R 1 is more preferably methyl, ethyl, butyl or propyl.

The novel photoresist polymer according to the present invention comprises (a) at least one bicycloalkene compound represented by Formula 2, and (b) maleic anhydride of Formula 3 or a compound of Formula 4 It may be prepared by radical polymerization using a radical polymerization initiator.

At this time, the polymerization is carried out by a method such as bulk polymerization or solution polymerization, and as the polymerization solvent, a single solvent such as cyclohexanone, methyl ethyl ketone, benzene, toluene, dioxane, tetrahydrofuran, dimethelformamide, or a mixed solvent thereof. Can be used. Polymerization initiators include benzoyl peroxide, 2,2′-azobisisobutyronitrile (AIBN), acetyl peroxide, lauryl peroxide, t-butylperacetate, t-butylhydroperoxide, di-t-butyl Peroxide and the like can be used.

Example 1 poly (maleic anhydride / 2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-norbornene-2-carne Acid / N-methyl maleimide) 0.4-0.9 mol of maleic anhydride of formula 13, 0.05-0.8 mol of 2-hydroxyethyl 5-norbornene-2-carboxylate, N 0.1 to 0.6 moles of methyl maleimide, 0.5 to 0.95 moles of t-butyl 5-norbornene-2-carboxylate and 0.001 to 0.2 moles of 5-norbornene-2-carboxylic acid were added to tetrahydrofuran or toluene. Dissolve in.

Then, 0.5 to 10 g of AIBN (azobisisobutyronitrile) was added to the solution as a polymerization initiator, and then reacted at a temperature of about 60 to 70 ° C. under nitrogen or argon for 4 to 24 hours.

The polymer thus produced is precipitated in ethyl ether or hexane and dried to obtain poly (maleic anhydride / 2-hydroxyethyl 5-norbornene-2-carboxylate of formula 5). / t-butyl 5-norbornene-2-carboxylate / 5-norbornene 2-carboxylic acid / N-methyl maleimide) polymer.

<Formula 5>

In the above formula, V: W: X: Y: Z = 10 to 100: 10 to 90: 10 to 90: 10 to 90: 10 to 90.

Example 2: poly (maleic anhydride / 2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-norbornene-2-carne Acid / N-ethyl maleimide)

Except for using 0.1 to 0.6 moles of N-ethyl maleimide instead of N-methyl maleimide in Example 1 in the same manner as in Example 1 poly (maleic anhydride / 2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-norbornene-2-carboxylic acid / N-ethyl maleimide) polymer was obtained.

<Formula 6>

In the above formula, V: W: X: Y: Z = 10-100: 10-90: 10-90: 10-90: 10-90.

Example 3: poly (maleic anhydride / 2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-norbornene-2-carne Acid / N-propyl maleimide)

A poly (maleic anhydride / 2-hydride as represented by the following formula (7) in the same manner as in Example 1 except that 0.1-0.6 mol of N-propyl maleimide was used instead of N-methyl maleimide in Example 1. Oxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-norbornene-2-carboxylic acid / N-propyl maleimide) polymer.

<Formula 7>

In the above formula, V: W: X: Y: Z = 10 to 100: 10 to 90: 10 to 90: 10 to 90: 10 to 90.

Example 4: Poly (maleic anhydride / 2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-norbornene-2-carne Acid / N-butyl maleimide)

Poly (maleic anhydride / 2-hydroxyethyl 5- as represented by the following formula (8) in the same manner as in Example 1, except that 0.1-0.6 mol of N-butyl maleimide was used instead of N-methyl maleimide. Norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-norbornene-2-carboxylic acid / N-butyl maleimide) polymer.

<Formula 8>

In the above formula, V: W: X: Y: Z = 10 to 100: 10 to 90: 10 to 90: 10 to 90: 10 to 90.

Example 5: poly (2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-norbornene-2-carboxylic acid / N-methyl Maleimide]

0.05-0.8 mol of 2-hydroxyethyl 5-norbornene-2-carboxylate, 0.5-1 mol of N-methyl maleimide, 0.5-0.95 mol of t-butyl 5-norbornene carboxylate And 0.001 to 0.2 moles of 5-norbornene-2-carboxylic acid are dissolved in tetrahydrofuran or toluene.

Then, 0.5 to 10 g of AIBN (azobisisobutyronitrile) was added to the solution as a polymerization initiator, and then reacted at a temperature of about 60 to 70 ° C. under nitrogen or argon for 4 to 24 hours.

The polymer thus produced is precipitated in ethyl ether or hexane and dried to dry poly (2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norm Bonen-2-carboxylate / 5-norbornene-2-carboxylic acid / N-methyl maleimide) polymer was obtained.

<Formula 9>

In the above formula, W: X: Y: Z = 10 to 100: 10 to 90: 10 to 90: 10 to 90.

Example 6: poly (2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-norbornene-2-carboxylic acid / N-ethyl Maleimide)

Except for using 0.5 to 1 mole of N-ethyl maleimide instead of N-methyl maleimide in the same manner as in Example 5 poly (2-hydroxyethyl 5-norbornene-2-carne Carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-norbornene-2-carboxylic acid / N-ethyl maleimide) polymer.

<Formula 10>

In the above formula, W: X: Y: Z = 10 to 100: 10 to 90: 10 to 90: 10 to 90.

Example 7: poly (2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-norbornene-2-carboxylic acid / N-propyl Maleimide)

Except for using 0.5 to 1 mole of N-propyl maleimide instead of N-methyl maleimide in the same manner as in Example 5 poly (2-hydroxyethyl 5-norbornene-2-carne Carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-norbornene-2-carboxylic acid / N-propyl maleimide) polymer.

<Formula 11>

In the above formula, W: X: Y: Z = 10 to 100: 10 to 90: 10 to 90: 10 to 90.

Example 8 poly (2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-norbornene-2-carboxylic acid / N-butyl Maleimide)

Except for using 0.5 to 1 mole of N-butyl maleimide instead of N-methyl maleimide in Example 5 in the same manner as in Example 5 poly (2-hydroxyethyl 5-nor Bonen-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-norbornene-2-carboxylic acid / N-butyl maleimide) polymer was obtained.

<Formula 12>

In the above formula, W: X: Y: Z = 10 to 100: 10 to 90: 10 to 90: 10 to 90.

<Formula 13>

1 is N-methyl maleimide, 2 is N-ethyl maleimide, 3 is N-propyl maleimide, 4 is N-butyl maleimide, 5 is 2-hydroxyethyl 5-norbornene-2-car Carboxylate, 6 is t-butyl 5-norbornene-2-carboxylate, 7 is 5-norbornene-2-carboxylic acid, 8 is maleic anhydride.

Hereinafter, a method for preparing a photoresist composition using the novel photoresist polymer of the present invention will be described.

The new polymer according to the present invention is dissolved in a conventional organic solvent together with a conventional photoacid generator to prepare a photoresist composition by a conventional method. That is, first, the polymer of the present invention is dissolved in an organic solvent such as ethyl 3-ethoxypropionate at 10 to 30% by weight, and onium salt or eutechonic acid, which is a photoacid generator, is added at 0.1 to 10% by weight relative to the polymer. Then, it is filtered through an ultrafine filter to prepare a photoresist composition. In this case, the organic solvent used may vary depending on the type of polymer, photoacid generator, lithography conditions, etc., but may generally use about 200 to 800 wt% based on the polymer.

The photoacid generator is a sulfur salt-based or onium salt-based diphenyl iodo hexafluorophosphate, diphenyl iodo hexafluoro arsenate, diphenyl iodo hexafluoro antimonate, diphenyl paramethoxyphenyl triflate, diphenyl Paratoluenyl triflate, diphenylparaisobutylphenyl triflate, diphenylpara-t-butylphenyl triflate, triphenylsulfonium hexafluoro phosphate, triphenylsulfonium hexafluor arsenate, triphenylsulfonium hexa Fluorine antimonate, triphenylsulfonium triflate, dibutylnaphthylsulfonium triflate, etc. can be used.

The organic solvent is cyclohexanone, methyl 3-methoxypropionate, ethyl 3-ethoxy

Cipropionate, propylene glycol methyl ether acetate, or a conventional organic solvent can be used.

Example 9 Preparation of a Composition of Photoresist

Poly (2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-norbornene-2-carboxylic acid / N- of Example 5 10 g of methyl maleimide) polymer was dissolved in 50 g of methyl 3-methoxypropionate or ethyl 3-ethoxypropionate solvent, and then triphenyl sulfonium, a photoacid generator 0.01 to 1 g of triphenyl sulfonium triflate or dibutyl naphthyl sulfonium triflate was added and stirred, and the solution was filtered with a 0.10 μm filter to obtain a photoresist composition of the present invention. .

Hereinafter, a method of forming a pattern of a semiconductor device using the photoresist composition will be described.

A thin film is prepared by spin coating a photoresist composition according to the present invention onto a silicon wafer, followed by soft baking, and exposure using an ultraviolet ray exposure apparatus or an excimer laser exposure apparatus. Subsequently, when developing after post-baking, a predetermined | prescribed fine pattern is obtained. At this time, the soft bake and the post bake is preferably carried out at 70-200 ℃. In addition to the ArF light, the exposure step may use KrF light, E-beam, X-ray, DUV, or the like. The exposure energy is preferably 0.1 to 10 mJ / cm 2.

Example 10 Formation of Pattern of Photoresist

After spin-coating the photoresist composition obtained in Example 9 on a silicon wafer to prepare a thin film, soft bake for 1 to 5 minutes in an oven or a hot plate at 80 to 150 ℃, an ultraviolet exposure apparatus or an excimer laser exposure apparatus After exposing using, it post-bakes at 100-200 degreeC.

The wafer thus exposed was immersed in a 2.38% TMAH aqueous solution for 1 minute 30 seconds and developed to obtain an ultrafine photoresist image.

The photoresist composition using the novel copolymer according to the present invention is not only excellent in etching resistance, heat resistance and adhesion to the substrate when using an exposure source in the DUV region, but also 2.38% tetramethylammonium, which is a common alkali developer. Aqueous hydroxide (TMAH) solution can be used as a developer.

As described above, the detailed description and the embodiments of the present invention have been disclosed for the purpose of illustration, and the technical scope of the present invention should not be limited thereto.

Claims (34)

(a) a bicycloalkene of formula (2), and (b) a maleic anhydride of formula (3) For photoresist consisting of a dry or maleimide derivative of formula coalescence. <Formula 2> Wherein R is hydrogen, substituted or unsubstituted straight or branched chain alkyl or alcohol having 1 to 10 carbon atoms, and n is 1 or 2. <Formula 3> <Formula 4> Wherein R 1 is hydrogen or substituted or unsubstituted straight or branched alkyl having 1 to 10 carbon atoms. According to claim 1, wherein the bicycloalkene of Formula 2 is 2-hydroxyethyl 5-norbornene-2-carboxylate, t-butyl 5-norbornene-2-carboxylate and 5-norbornene- Polymer for photoresist, characterized in that selected from the group consisting of 2-carboxylic acid. The polymer of claim 1, wherein R 1 in Formula 4 is selected from the group consisting of methyl, ethyl, butyl, and propyl. The polymer of claim 1, wherein the polymer has a molecular weight of 3,000 to 100,000. The method of claim 1, wherein the polymer is a poly (maleic anhydride / 2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate of formula 5 / 5-norbornene 2-carboxylic acid / N-methyl maleimide). <Formula 5> At this time, V: W: X: Y: Z = 10 to 100: 10 to 90: 10 to 90: 10 to 90: 10 to 90. The method of claim 1, wherein the polymer is a poly (maleic anhydride / 2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxe Cyclate / 5-norbornene-2-carboxylic acid / N-ethyl maleimide). <Formula 6> At this time, V: W: X: Y: Z = 10-100: 10-90: 10-90: 10-90: 10-90. The method of claim 1, wherein the polymer is a poly (maleic anhydride / 2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxyl of the formula Rate / 5-norbornene-2-carboxylic acid / N-propyl maleimide). <Formula 7> At this time, V: W: X: Y: Z = 10-100: 10-90: 10-90: 10-90: 10-90. The method of claim 1, wherein the polymer is a poly (maleic anhydride / 2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxe Cyclate / 5-norbornene-2-carboxylic acid / N-butyl maleimide). <Formula 8> At this time, V: W: X: Y: Z = 10-100: 10-90: 10-90: 10-90: 10-90. The method of claim 1, wherein the polymer is poly (2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-norbornene- 2-carboxylic acid / N-methyl maleimide). <Formula 9> At this time, W: X: Y: Z = 10 to 100: 10 to 90: 10 to 90: 10 to 90. The method of claim 1, wherein the polymer is a poly (2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-nor Bonene-2-carboxylic acid / N-ethyl maleimide) polymer for photoresists. <Formula 10> At this time, W: X: Y: Z = 10 to 100: 10 to 90: 10 to 90: 10 to 90. According to claim 1, wherein the polymer is a poly (2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-nor Bonene-2-carboxylic acid / N-propyl maleimide) polymer for photoresists. <Formula 11> In the above formula, W: X: Y: Z = 10 to 100: 10 to 90: 10 to 90: 10 to 90. The method of claim 1, wherein the polymer is a poly (2-hydroxyethyl 5-norbornene-2-carboxylate / t-butyl 5-norbornene-2-carboxylate / 5-nor Bonene-2-carboxylic acid / N-butyl maleimide). <Formula 12> In the above formula, W: X: Y: Z = 10 to 100: 10 to 90: 10 to 90: 10 to 90. (a) a bicycloalkene of formula (2), and (b) a maleic anhydride of formula (3) A method for producing a polymer for photoresist, characterized in that the radical polymerization of a dry or maleimide derivative of the formula (4) using a radical polymerization initiator. <Formula 2> Wherein R is hydrogen, substituted or unsubstituted straight or branched chain alkyl or alcohol having 1 to 10 carbon atoms, and n is 1 or 2. <Formula 3> <Formula 4> Wherein R 1 is hydrogen or substituted or unsubstituted straight or branched alkyl having 1 to 10 carbon atoms. The method of claim 13, wherein the radical polymerization initiator is selected from the group consisting of benzoyl peroxide, 2,2'-azobisisobutyronitrile (AIBN), acetyl peroxide, lauryl peroxide and t-butylperacetate. A method for producing a polymer for photoresist, characterized in that. The method of claim 13, wherein the radical polymerization is performed by bulk polymerization or solution polymerization. The method of claim 13, wherein the radical polymerization is performed using one or two or more selected from the group consisting of cyclohexanone, methyl ethyl ketone, benzene, toluene, dioxane, dimethelformamide and tetrahydrofuran as a polymerization solvent. A method for producing a polymer for photoresist, characterized in that. The photoresist composition of claim 1 comprising a photoresist polymer, a photoacid generator and an organic solvent. The photoresist composition of claim 17, wherein the photoacid generator is a sulfide salt or an onium salt salt. 19. The method of claim 18, wherein the photoacid generator is diphenyl iodo hexafluorophosphate, diphenyl iodo hexafluoro arsenate, diphenyl iodo hexafluoro antimonate, diphenyl paramethoxy phenyl triflate, diphenyl paratoluene Neyl Triflate, Diphenylparaisobutylphenyl Triflate, Diphenylpara-t-butylphenyl Triflate, Triphenylsulfonium Hexafluor Phosphate, Triphenylsulfonium Hexafluor Arsenate, Triphenylsulfonium Hexafluor Antimo A photoresist composition comprising one or two or more selected from the group consisting of nates, triphenylsulfonium triflate, and dibutylnaphthylsulfonium triflate. 18. The photoresist composition of claim 17, wherein the organic solvent is selected from the group consisting of cyclohexanone, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate and propylene glycol methylether acetate. The photoresist composition of claim 17, wherein the polymer is used in an amount of 10 to 30 wt% with respect to the organic solvent. Dissolving the photoresist polymer and the photoacid generator according to claim 1 in an organic solvent, Method for producing a photoresist composition comprising the step of filtering the resulting solution with an ultra-fine filter. 23. The method of claim 22, wherein the photoacid generator is a sulfide salt or an onium salt salt. 24. The method of claim 23, wherein the photoacid generator is diphenyl iodo hexafluorophosphate, diphenyl iodo hexafluoro arsenate, diphenyl iodo hexafluoro antimonate, diphenyl paramethoxy phenyl triflate, diphenyl paratoluene Neyl Triflate, Diphenylparaisobutylphenyl Triflate, Diphenylpara-t-butylphenyl Triflate, Triphenylsulfonium Hexafluor Phosphate, Triphenylsulfonium Hexafluor Arsenate, Triphenylsulfonium Hexafluor Antimo Nate, triphenylsulfonium triflate, and dibutylnaphthylsulfonium triflate comprising one or two or more selected from the group consisting of. The photoresist composition of claim 22, wherein the organic solvent is selected from the group consisting of cyclohexanone, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, and propylene glycol methylether acetate. Manufacturing method. The method of claim 22, wherein the polymer is used in an amount of 10 to 30 wt% with respect to the organic solvent. (a) applying the photoresist composition of claim 17 on a substrate to form a photoresist film; (b) exposing the photoresist film; And and (c) developing the photoresist film. Method for manufacturing a conductor element. 28. The method of claim 27, further comprising the step of performing a soft bake after step (a). 29. The method of claim 28, wherein the soft bake is performed at 70-200 ° C. 28. The method of claim 27, further comprising performing post-baking after step (b). 31. The method of claim 30, wherein the post bake is performed at 70-200 ° C. 28. The method of claim 27, wherein step (b) is performed using ArF, KrF, DUV, E-beam or X-ray. 28. The method of claim 27, wherein step (b) is performed by irradiating exposure energy of 0.1-10 mJ / cm 2. A semiconductor device manufactured using the photoresist composition of claim 17.