KR19990044729A - Leakage Detection Device and Leakage Detection Sensor in Semiconductor Device Manufacturing Equipment - Google Patents

Abstract

Install a device to detect leaks that may occur from the fluid supply line of the equipment for manufacturing semiconductor devices and the area where the fluid is provided, and quickly identify the leak and generate an alarm to detect an accident due to the leak. The present invention relates to a leak detection device of a semiconductor device manufacturing facility having a sensor which prevents and effectively leaks, and a sensor used therein, the leak detection device comprising: sensing means for sensing a penetration of a fluid and a signal by sensing the sensing means Comparing unit for comparing the voltage level of the predetermined reference voltage and the set, the switching unit is switched according to the level of the signal output from the comparison unit and the alarm unit for the alarm operation is performed by the switching signal of the switching unit. The leak detection sensor is configured to detect the leakage of fluid by absorbing fluid leaked by an absorber surrounding a plurality of conductors to which power is applied and energizing the plurality of conductors.

Description

Leakage Detection Device and Leakage Detection Sensor in Semiconductor Device Manufacturing Equipment

The present invention relates to a leak detection device and a leak detection sensor of a semiconductor device manufacturing facility, and more particularly to leaks that may be generated from a fluid supply line of a facility for manufacturing a semiconductor device and a site where a fluid is provided. The present invention relates to a leak detection device and a sensor used therein, which are provided with a sensor for detecting the leak and quickly detect the occurrence of a leak to prevent an accident due to a leak and to effectively detect the leak.

Fluid is supplied to a manufacturing plant or a general living space in which various facilities are installed, and a pipe connected in a predetermined length unit is usually used for a fluid supply path. And these pipes are used joints, valves, pipe joints, etc. to connect different pipes.

In piping, the factors to be considered should be the material, thickness and strength of the pipes, taking into account the expected flow rate and hydraulic pressure of the fluid flowing through the pipes.

In general, fluids such as pure water or cooling water, various chemicals, oils, and IPA (Isopropyl Alcohol, hereinafter referred to as 'IPA') are used in semiconductor manufacturing lines. Pipes for fluid supply are usually corrosion resistant, airtight, and have properties and materials that minimize the influence of the external environment. However, water leakage has sometimes occurred due to inadvertent installation, defects in pipes or connectors, or the service life of piping components.

As described above, leakage may contaminate the clean room, and the humidity and temperature may increase due to the leakage, which may affect the air conditioning system of the clean room and worsen process conditions. In particular, if the leak occurs in the site where the operator can not easily determine whether the leak occurred, it is difficult to determine whether the leak occurred, resulting in a fatal failure of the equipment. As a result, a significant recovery time was required for the original restoration of the facility, and there was a problem in that the productivity was reduced.

An object of the present invention is to install a leak detection device having a sensor for detecting a leak at a site where a leak is expected to occur, so as to react quickly when a leak occurs, the leak of the semiconductor device manufacturing equipment to prevent accidents due to leak in advance To provide a sensing device.

Another object of the present invention is to provide a leak detection sensor of a semiconductor device manufacturing facility that is sensitive to fluid leakage and humidity above a predetermined level.

1 is a block diagram showing a preferred embodiment of a leak detection apparatus of a semiconductor device manufacturing apparatus according to the present invention.

2 is a circuit diagram showing an embodiment of a leak detection apparatus of a semiconductor device manufacturing facility according to the present invention.

3A is a plan view illustrating an example of a leak detection sensor of a semiconductor device manufacturing apparatus according to the present invention.

3B is a side view of FIG. 3A.

4A is a perspective view showing another example of a leak detection sensor of a semiconductor device manufacturing apparatus according to the present invention.

4B is a side view of FIG. 4A.

※ Explanation of codes for main parts of drawing

10: power supply unit 12: sensing unit

14: comparison unit 16: switching unit

18: alarm unit 20: bridge rectifier

22: leak detection sensor 24: comparator

26: relay 28: independent power

30, 40: wire 32: fabric

34: center 36, 42: connection

38: absorber F: fuse

Vs: AC Power Vcc: Driving Voltage

T1: transformer VR1: variable resistor

R1 to R6, Ra: Resistor D1 to D4: Diode

Q1: transistors L1, L2, L3: lamps

Bz: Buzzer S1, S2, S3: Switch

Leak detection apparatus of a semiconductor device manufacturing apparatus according to the present invention for achieving the above object, the sensing means for detecting the penetration of the fluid, the comparison unit for comparing the voltage level of the signal by the sensing of the sensing means and the predetermined reference voltage set And a switching unit which is switched according to the level of the signal output from the comparing unit, and an alarm unit configured to perform an alarm operation by the switching signal of the switching unit.

In addition, the sensing means is absorbed by the fluid is absorbed and energized, the sensing is made, it can be made to be installed in a fixed position or a natural left or the like at a predetermined position.

In addition, the sensing means is preferably provided with a leak detection sensor.

The switching unit may include a transistor that is turned on or off by an output signal of the comparator and a relay connected to the transistor to which a driving voltage is applied when the transistor is turned on to perform a switching operation.

In addition, the alarm unit may include a buzzer which performs an alarm operation by a lamp or a sounding device in which an alarm operation is performed by light emission.

In the leak detection sensor of the semiconductor device manufacturing apparatus according to the present invention for achieving the above object, the fluid leaked by the absorber surrounding the plurality of conductors to which the power is applied is absorbed and the plurality of conductors are energized to leak the fluid Is made to be detected.

And, the conductor may be made of two or more, preferably arranged in parallel with each other.

In addition, the conductor may be made of a material having excellent electrical conductivity, including gold, silver, copper, aluminum, and the like, and a plurality of rings may be connected to each other to be modified in shape.

In addition, the conductor may be composed of three lines, preferably, two lines connected to the same connection terminal and one line connected to another connection terminal between the two lines are arranged in parallel with each other.

In addition, it is preferable that predetermined paths are respectively formed in the absorber so that the respective conductors do not short-circuit each other.

In addition, the absorbent is made of a material having an excellent absorbing power to quickly absorb the fluid, it may be made of a material or fabric having a cellulose component.

In addition, it is preferable to further include a connecting portion connecting the conductors to the same side end of the plurality of conductors, respectively, to be detachably connected to a predetermined device.

The connection part may be formed in a plug shape having two terminals.

In addition, the fluid may include water, oil, IPA (Isopropyl Alcohol), chemical (Chemical) and the like.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

An embodiment of a leak detection apparatus of a semiconductor device manufacturing apparatus according to the present invention will be described first, and then the specific characteristics and structure of the leak detection sensor will be described.

First, referring to FIG. 1, an embodiment of a leak detection apparatus of a semiconductor device manufacturing apparatus according to the present invention includes a pipe (not shown) in which a fluid such as water is supplied to a power supply unit 10 to which driving power is supplied to a device. A sensing unit 12 for detecting a leak is installed at a specific part where leakage is expected, and a comparator 14 is connected to the sensing unit 12 for detecting a leak.

The comparing unit 14 is connected to the switching unit 16 is switched by the comparison signal, the switching unit 16 is configured by the alarm unit 18 is connected to the alarm operation.

In the exemplary embodiment according to the present invention configured as described above, when a leak in the pipe is detected through the sensing unit 10 having a sensor for detecting a leak, a sensing signal is applied to the comparator 12. The output signal is applied to the switching unit 16 in comparison with the voltage. In the switching unit 16 is switched according to the output signal of the comparator 14 and the alarm operation is performed while power is supplied to the alarm unit 18.

A specific embodiment according to the present invention will be described in more detail with reference to FIG.

2, a bridge rectifier 20 is connected to a secondary side of a transformer T1 to which an AC power supply Vs is applied through a power switch S1 and a fuse F, so that a bridge rectifier 20 is connected. A constant voltage is supplied from 20.

On one output side of the bridge rectifier 20, the variable resistor VR1 is connected to ground through a resistor R2 and a diode D1 connected in series to a resistor R1 receiving a driving voltage Vcc.

At the connection terminal of the resistor R1 and the resistor R2, the diode D2 is connected in series with the diode D3 in the forward direction and connected to the input side of the comparator 24, and the cathodes of the diodes D2 and D3 are connected. ) Is connected to ground by resistor R3 and resistor R4, respectively.

On the other output side of the bridge rectifier 20, a leak detection sensor 22 having one end connected to the cathode of the diode D1 is connected.

The other input side of the comparator 24 is grounded through a resistor Ra, and on the output side, a resistor R5 is connected in series with a resistor R6 connected in parallel with the transistor Q1.

The induction terminal of the relay 26 to which the driving voltage Vcc is applied and the diode D4 are connected in parallel to the collector of the transistor Q1.

The switching terminal K1 of the relay is made to switch so that the blue lamp L1 and the red lamp L2 are selectively turned on, and the switching terminal K2 is configured to switch the operation of the buzzer Bz.

In addition, the manual switch S2 is connected so that the power 28 is selectively supplied to the switch S3 and the switching terminal K2 of the relay. The white lamp L3 is connected to the switch S3. The lamp L1, the red lamp L2, the white lamp L3 and the buzzer Bz are connected in parallel with each other.

The switching terminal K1 and the switch S2 of the relay 26 are connected in parallel with each other, and the independent power source 28 is connected so that the driving power is applied.

In detail, the operation of the circuit configured as described above is performed when the leak detection sensor 22 is in an off state in which the leak detection sensor 22 is not activated and the leak detection sensor 22 is operated by the leak. It can be explained by dividing into On).

First, when the leak detection sensor 22 is in the off state, the signal applied to the comparator 24 through the diodes D2 and D3 by the driving voltage Vcc is kept low, so that the comparator 24 The level of the output signal of is low.

The level of the output signal becomes low so that the transistor Q1 remains off. When the transistor Q1 is in the off state, the contact C1 of the relay 26 is connected to the contact A1 as shown in FIG. 2 so that the blue lamp LP1 is turned on. This indicates a steady state indicating that no leak occurs.

The red lamp RL and the white lamp WL remain off, and the buzzer Bz does not sound.

When the leak detection sensor 22 reacts to a short circuit due to leakage and is in an on state due to the operation of the sensor, the leak detection sensor 22 is turned on so that the output voltage of the bridge rectifier 20 is increased. When applied to the comparator 24 through the diode D3, the comparator 24 is compared with a reference voltage applied to the resistor Ra, and as a result, a high level signal is applied to the transistor Q1.

Since the high level signal is applied to the base, the transistor Q1 is turned on, and the driving voltage Vcc is applied to the relay 26. Then, each switching terminal K1.K2 is switched by the induction action of the relay 26 so that the contact C1 is connected to the contact B1 so that the red lamp LP2 emits light, and the contact C2 is connected to the contact ( It is connected to B2), the buzzer Bz is activated, and the alarm operation by the pronunciation is performed.

That is, when the red lamp L2 is emitted and the leak alarm is generated by the operation of the buzzer Bz, the operator judges that the leak has occurred at the site where the leak detection device is installed and quickly finds the occurrence area to prevent continuous leakage. A series of actions will be taken. At this time, the operator operates the switch 27 to stop the sound of the buzzer Bz during the operation. When the contact point of the switch S2 is changed from the contact point Y to the contact point X, the power is applied to the white lamp L3. .

The white lamp L3 is used for the test, and the lighting of the white lamp L3 may be performed during the repair or the device test due to the leakage.

Repairing the equipment and the internal environment according to the leak to restore the leak detection sensor 22 again or replaced with a new leak detection sensor 22 is installed again, the leak detection sensor 22 maintains an open (Open) state.

In this case, the transistor Q1 maintains Turn Off as in the case where the leak detection sensor 22 is in the off state, and the relay 26 switches the leak detection sensor 22 in the off state. The contacts of the terminals K1 and K2 remain switched to the switching positions of A1 and A2.

In the above-described bar, a case in which only one leak detection sensor is connected is illustrated. However, the leak detection device may be connected to a plurality of leak detection devices in parallel. In addition, it is natural that the leak detection apparatus can be connected to each other by installing a plurality of leak detection devices and connected to one controller to monitor the leakage of each part.

And, the characteristics and structure of the leak detection sensor of the semiconductor device manufacturing equipment according to the present invention with reference to Figures 3a to 4b.

FIG. 3A shows two leak detection conductive wires 30a and 30b having excellent electrical conductivity are inserted into the fabric 32 having excellent absorbency, and the two conductive wires 30a and 30b are not in contact with each other. ) Is sutured.

And, one end of the fabric 32 is formed with a connecting portion 36 is to facilitate connection to the connecting terminal of the device using the same.

The conductive wires 30a and 30b are preferably made of a metallic material such as gold, silver, copper, and aluminum, which have excellent electrical conductivity and have a low specific resistance. A single wire may be used, and various wires such as twisted wire may be used. Can be. In addition, a conductor wire having a shape in which ring-shaped conductors are connected to each other so as to be easily fixed to a predetermined floor or wall and to be freely deformed in shape can be used.

The fabric 32 is made of a material having a property of absorbing water, oil, IPA, various chemicals, and the like used in the semiconductor manufacturing process, cotton or similar fabric is used.

When the fabric 32 is formed too thick to surround the conductors 30a and 30b, the response time detected and responded by the conductors 30a and 30b is delayed, so that the conductors 30a and 30b are formed by the fabric 32. It is desirable to maintain the minimum thickness that can be shorted.

In addition, the space between the conductive wires 30a and 30b is separated between the conductive wires 30a and 30b by sealing the central portion 34 so as to maintain a space such that the gap is not shorted in the normal state in which the fluid is not absorbed.

In FIG. 4A, a sensing lead 40 is inserted into the core of an absorber 38 of a material slightly different from that of FIG. 3A. An absorbent material 38 including a cellulose component may be used, and a connecting portion 42 is formed outside the absorbent material 38 from the conductive wire 40 inserted into the core portion of the absorbent material 38. The conducting wire 40 between the outer side of the absorber 38 and the connection part 42 is each covered by the coating | cover, and it is comprised so that it may not mutually short. In addition, the length between the connecting portion 42 and the conductive wire 40 may be expanded or reduced.

It is usually easy to connect and disconnect the leak detection device.

The configuration similar to the above may be configured by forming a common terminal in the center to detect a larger area of leakage, and separately installing the conductive wires connected to the same terminal to both sides of the common terminal.

That is, a leak may be detected when a conductor connected to a common terminal and a terminal of one side of both sides is leaked by a leak, and a leak may be detected when a conductor connected to the common terminal and a terminal of the other side of both sides is leaked by a leak. A perceived effect can be obtained.

As described above, according to the embodiment of the present invention, when a leak occurs in a part where the semiconductor device manufacturing equipment is installed and the fluid is supplied, an alarm is generated while being detected by the leak detection sensor, thereby preventing an accident due to the leak in advance. By using a leak detection sensor having various shapes and characteristics, there is an advantage that a leak can be quickly detected.

Therefore, according to the present invention, the leak of the fluid that can be generated in the line or the equipment supplied to the facility, or the leak detection sensor is detected by the device using the leak detection sensor, the alarm to notify the occurrence of the leak is generated in advance to detect the leak And this does not spread the accident is effective to protect the facility.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (21)

Sensing means for detecting the penetration of the fluid; A comparator for comparing the voltage level of the signal by the sensing means with a predetermined reference voltage; A switching unit switched according to a level of a signal output from the comparison unit; And An alarm unit configured to perform an alarm operation by a switching signal of the switching unit; Leak detection apparatus of a semiconductor device manufacturing equipment characterized in that it comprises a. The method of claim 1, wherein the sensing means, The leak detection device of the semiconductor device manufacturing equipment, characterized in that the sensing is performed by the leaked fluid is absorbed and energized. The method of claim 1, wherein the sensing means, Leakage detection device of the semiconductor device manufacturing equipment, characterized in that the installation is made in a fixed position or a natural, such as in a predetermined position. The method of claim 2 or 3, wherein the sensing means, Leakage detection device of the semiconductor device manufacturing equipment characterized in that it comprises a leak detection sensor. The method of claim 1, wherein the switching unit, A transistor turned on and off by an output signal of the comparator; And A relay connected to the transistor and configured to perform a switching operation by applying a driving voltage when the transistor is turned on; Leak detection apparatus of the semiconductor device manufacturing equipment characterized in that it comprises a. The method of claim 1, wherein the alarm unit, And a lamp for alarming operation by light emission. The method of claim 1, wherein the alarm unit, And a buzzer in which an alarm operation is performed by sounding. The leak detection sensor of the semiconductor device manufacturing equipment, characterized in that the leaked fluid is absorbed by the absorber surrounding the plurality of conductors to which the power is applied so that the plurality of conductors are energized to detect the leakage of the fluid. The method of claim 8, wherein the conductor, Leakage detection sensor of the semiconductor device manufacturing equipment, characterized in that consisting of two or more. The method of claim 8, wherein the conductor, Leak detection sensor of the semiconductor device manufacturing equipment, characterized in that arranged in parallel to each other. The method of claim 10, And a predetermined path is formed in the absorber so that the respective conductors do not short-circuit each other. The method of claim 8, wherein the conductor, The leak detection sensor of the semiconductor device manufacturing equipment, characterized in that made of a material having excellent electrical conductivity including gold, silver, copper, aluminum. The method of claim 8, wherein the conductor, Leak detection sensor of the semiconductor device manufacturing equipment, characterized in that the deformation of the shape is made by connecting a plurality of rings coupled to each other. The method of claim 8, wherein the conductor, Leak detection sensor of the semiconductor device manufacturing equipment, characterized in that consisting of three lines. The method of claim 14, wherein the three lines, And two lines connected to the same connection terminal and one line connected to the other connection terminal between the two lines are arranged in parallel with each other. The method of claim 8, wherein the absorbent material, Leak detection sensor of the semiconductor device manufacturing equipment, characterized in that made of a material having excellent absorption ability to quickly absorb the fluid. The method of claim 16, wherein the absorbent material, Leak detection sensor of the semiconductor device manufacturing equipment, characterized in that made of a material having a cellulose component. The method of claim 16, wherein the absorbent material, Leakage detection sensor of the semiconductor device manufacturing equipment, characterized in that made of a fabric. The method of claim 8, Leak detection apparatus of the semiconductor device manufacturing equipment, characterized in that further comprising a connecting portion for connecting the conductors to the same side end of the plurality of conductors, respectively, freely detachable to a predetermined device. The method of claim 19, wherein the connecting portion, Leak detection sensor of the semiconductor device manufacturing equipment, characterized in that the plug form having two terminals. The method of claim 8, wherein the fluid, Leak detection sensor of the semiconductor device manufacturing equipment, characterized in that water, oil, IPA (Isopropyl Alcohol), chemical (Chemical) and the like.