KR19990037258A - Capillary for Wire Bonding Device - Google Patents
Capillary for Wire Bonding Device Download PDFInfo
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- KR19990037258A KR19990037258A KR1019980044084A KR19980044084A KR19990037258A KR 19990037258 A KR19990037258 A KR 19990037258A KR 1019980044084 A KR1019980044084 A KR 1019980044084A KR 19980044084 A KR19980044084 A KR 19980044084A KR 19990037258 A KR19990037258 A KR 19990037258A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
고계단차·단루프의 와이어본딩에 있어서도 안정한 루프높이가 얻어짐과 동시에 볼 네크부에서의 와이어 절단이 방지된다.Also in the wire bonding of a high step difference and a single loop, a stable loop height is obtained and wire cutting at the ball neck part is prevented.
보틀네크형 캐필러리(2)이고, 페이스각도 FA가 16∼19도이다.The bottleneck capillary 2 has a face angle FA of 16 to 19 degrees.
Description
본발명은 와이어본딩장치에 사용하는 캐필러리에 관한 것이다.The present invention relates to a capillary for use in a wire bonding apparatus.
도 3은 종래의 캐필러리로, (a)는 표준형 캐필러리 1, (b)는 보틀네크형 캐필러리(2)를 도시한다. 보틀네크형 캐필러리(2)는 일반적으로 반도체칩상의 인접하는 패드 전극사이의 거리가 어느정도 가까운 경우에 사용된다. 즉, 본딩동작중에 캐필러리가 본딩하는 패드전극의 이웃의 패드전극상에 이미 본딩된 볼 및 와이어에 접촉하지 않도록 캐필러리(2)의 선단부분이 가늘게된 네크부(2a)로 되어있다.3 shows a conventional capillary, (a) shows a standard capillary 1 and (b) shows a bottleneck capillary 2. The bottleneck capillary 2 is generally used when the distance between adjacent pad electrodes on a semiconductor chip is somewhat close. That is, the tip portion of the capillary 2 is a tapered neck portion 2a so as not to contact the ball and wire already bonded on the pad electrode adjacent to the pad electrode to which the capillary bonds during the bonding operation.
도 3에서 FA는 페이스각도(Face Angle), OR은 아우터 래디어스(Outer Radius)를 도시한다. 더욱이, 표준형 캐필러리(1)로서는 예를들면 일본 실공평 1-42349호 공보, 일본 실공평 2-19966호 공보, 일본 실공평 2-19967호 공보, 일본 특공평 3-780호 공보등에 개시된 것이 알려지고, 페이스각도 FA는 0도에서 30도까지의 범위로 여러 가지의 것이 제공되어 있다.In FIG. 3, FA denotes a face angle, and OR denotes an outer radius. Furthermore, as the standard capillary 1, for example, disclosed in Japanese Unexamined Patent Application Publication No. 1-42349, Japanese Unexamined Patent Application Publication No. 2-19966, Japanese Unexamined Patent Application Publication No. 2-19967, Japanese Unexamined Patent Application Publication No. 3-780, etc. It is known that various face angle FAs are provided in the range of 0 to 30 degrees.
보틀네크형 캐필러리(2)는 페이스각도 FA가 15도이하이다.The bottleneck capillary 2 has a face angle FA of 15 degrees or less.
그런데 근년의 반도체장치의 소형화, 고밀도화의 요구에 동반하여 이를 실현하기 위한 여러 가지 형상의 반도체장치의 패키지가 개발되어 있다. 그중의 하나 CSP(Chip Size Package)라 불리우는 패키지가 있다. 이 패키지는 반도체칩의 체적이 패키지의 체적의 대부분을 차지하는 구조로 되어 있다. 따라서 외형이 작고, 고밀도로 실제장착이 가능하기 때문에 최근 특히 사용되고 있다.However, in recent years, with the demand for miniaturization and high density of semiconductor devices, packages of various shapes of semiconductor devices have been developed for realizing them. One of them is a package called a Chip Size Package (CSP). This package has a structure in which the volume of the semiconductor chip occupies most of the volume of the package. Therefore, it is especially used recently because it is small in appearance and can be actually mounted with high density.
이 패키지의 와이어본딩작업은 종래보다도 짧은 와이어 길이가 요구된다. 종래에 있어서는 와이어 길이는 2∼7mm였지만, 이 패키지에 있어서 와이어본딩에서는 반도체칩상의 제1본딩점(패드전극)과 리드상의 제2본딩점과의 사이에서 계단차가 300μm이상, 거리가 500μm 이하일때에 예를들면 와이어 길이가 약 0.8mm와 같이 고계단차·단루프로 와이어 본딩하는 것이 요구된다. 이 때문에 도 4에 도시하는 바와같이 반도체칩(3)상의 제1본딩점(패드전극)(4)과 리드(5)상의 제2본딩점(6)의 거리가 극단으로 짧기 때문에 캐필러리(2)를 반도체칩(3)에 가능한 접근시켜서 본딩을 행할 필요가 있다.The wire bonding operation of this package requires a shorter wire length than before. Conventionally, the wire length was 2 to 7 mm. However, in this package, when the step difference is 300 μm or more and the distance is 500 μm or less between the first bonding point (pad electrode) on the semiconductor chip and the second bonding point on the lead in the wire bonding. For example, it is required to wire bond with a high stepped step | step, such as a wire length of about 0.8 mm. Therefore, as shown in FIG. 4, the distance between the first bonding point (pad electrode) 4 on the semiconductor chip 3 and the second bonding point 6 on the lead 5 is extremely short. It is necessary to bond 2) as close to the semiconductor chip 3 as possible.
또, 캐필러리(2)가 반도체칩(3)에 접촉하지 않기위하여 보틀네크형 캐필러리(2)가 사용된다.In addition, the bottleneck capillary 2 is used so that the capillary 2 does not contact the semiconductor chip 3.
도 6에 도시하는 바와같이 제1본딩점(4)과 제2본딩점(6) 사이에 충분한 거리가 있는 경우에는 캐필러리(2)가 와이어(7)의 선단에 형성된 볼을 제1본딩점(4)에 본딩후에 상승하고, 그후 제2본딩점(6)에 하강할때에 루핑중의 와이어(7)에 캐필러리(2)의 아우터 래디어스 OR부가 접촉하지 않고 본딩이 행해진다.As shown in FIG. 6, when there is a sufficient distance between the first bonding point 4 and the second bonding point 6, the capillary 2 first bonds the ball formed at the tip of the wire 7. Bonding takes place after bonding to the point 4 and then the outer radial OR portion of the capillary 2 does not contact the wire 7 during roofing when descending to the second bonding point 6.
그러나, 도 4에 도시하는 바와같이 고계단차·단루프의 본딩을 행하는 경우에는 반도체칩(3)상의 제1본딩점(4)과 리드(5)상의 제2본딩점(6) 사이는 지근거리(약 0.35mm의 거리)에 있다. 이 때문에 도 4(a)에 도시하는 바와같이 캐필러리(2)가 와이어(7)의 선단에 형성된 볼을 제1본딩점(4)에 본딩후에 상승하고, 그후 제2본딩점(6)에 하강할때에 종래와 같이 페이스 각도 FA가 15도 이하이면, 루핑중의 와이어(7)에 캐필러리(2)의 아우터 래디어스 OR부가 접촉하는 것이 실험의 결과 판명되었다.However, as shown in Fig. 4, in the case of performing the high step difference / single loop bonding, there is a gap between the first bonding point 4 on the semiconductor chip 3 and the second bonding point 6 on the lead 5. It is near (a distance of about 0.35mm). For this reason, as shown in FIG.4 (a), the capillary 2 raises the ball formed in the front-end | tip of the wire 7, after bonding to the 1st bonding point 4, and after that, the 2nd bonding point 6 When the face angle FA is 15 degrees or less, as in the conventional case, the outer radial OR portion of the capillary 2 comes into contact with the wire 7 during roofing as a result of the experiment.
캐필러리(2)의 아우터 래디어스 OR부가 와이어(7)에 접촉하면, 와이어(7)를 질질끌고, 도 4(b)와 같이 본딩후의 루프높이가 낮게된다. 또 제2본딩점 6으로의 본딩후, 캐필러리(2)에서 압접된 와이어(7)의 부분이 반도체칩(3) 방향으로 휘므로 와이어(7)가 더 한층 반도체칩(3)에 접근하게되어 와이어본딩 공정이후의 공정에서 반도체칩(3)과 와이어(7)가 접촉하기 쉬워진다. 또 와이어가 끌리면 볼네크부(7a)에 스트레스를 받으므로, 도 5에 도시하는 바와같이 볼네크부(7a)에서 와이어(7)가 절단될 수 있다.When the outer radial OR portion of the capillary 2 contacts the wire 7, the wire 7 is dragged, and the loop height after bonding becomes low, as shown in Fig. 4B. After bonding to the second bonding point 6, the portion of the wire 7 pressed by the capillary 2 bends toward the semiconductor chip 3, so that the wire 7 approaches the semiconductor chip 3 further. As a result, the semiconductor chip 3 and the wire 7 are easily in contact with each other after the wire bonding step. In addition, since the ball neck portion 7a is stressed when the wire is dragged, the wire 7 can be cut from the ball neck portion 7a as shown in FIG.
본발명의 과제는 고계단차·단루프의 와이어본딩에 있어서도 안정한 루프높이가 얻어짐과 동시에 볼네크부에서의 와이어 절단이 방지되는 와이어본딩장치용 캐필러리를 제공하는 것에 있다.An object of the present invention is to provide a capillary for a wire bonding apparatus in which a stable loop height is obtained even in wire bonding of a high step difference and a single loop, and the wire cutting at the ball neck portion is prevented.
도 1은 본발명의 보틀네크형 캐필러리의 일실시예의 형태를 도시하는 단면도,1 is a cross-sectional view showing the form of an embodiment of a bottleneck capillary of the present invention;
도 2는 보틀네크형 캐필러리에 의한 고계단차·단루프의 와이어본딩을 도시하고, (a)는 캐필러리의 하강도중의 상태도, (b)는 제2본딩점에서 본딩후의 상태도,FIG. 2 shows wire bonding of a high step difference and step loop by a bottleneck capillary, (a) is a state during the lowering of the capillary, (b) is a state after bonding at the second bonding point,
도 3은 종래의 캐필러리를 도시하고, (a)는 표준형 캐필러리의 단면도, (b)는 보틀네크형 캐필러리의 단면도,3 shows a conventional capillary, (a) is a sectional view of a standard capillary, (b) is a sectional view of a bottleneck capillary,
도 4는 도 3(b)의 보틀네크형 캐필러리에 의한 고계단차·단루프의 와이어본딩을 도시하고, (a)는 캐필러리의 하강도중의 상태도, (b)는 제2본딩점의 본딩후의 상태도.FIG. 4 shows the wire bonding of the high step difference and the step loop by the bottleneck capillary of FIG. 3 (b), (a) is a state diagram during the lowering of the capillary, and (b) is a second bonding point State diagram after bonding.
도 5는 볼네크부가 절단된 상태도,5 is a state in which the ball neck portion is cut,
도 6은 제1 본딩점과 제2본딩점과의 거리가 긴 경우의 본딩상태도.6 is a bonding state diagram when the distance between the first bonding point and the second bonding point is long.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
2: 보틀네크형 캐필러리 3:반도체칩2: bottleneck capillary 3: semiconductor chip
4:제1본딩점 6:제2본딩점4: first bonding point 6: second bonding point
7:와이어 7a:볼네크부7: Wire 7a: Volneck
FA: 페이스각도FA: Face Angle
상기 과제를 해결하기 위한 본발명의 제1수단은 선단면에 페이스 각도를 설치한 와이어본딩장치용 캐필러리에 있어서, 상기 캐필러리는 보틀네크형으로서, 상기 페이스각도가 16∼ 19도인 것을 특징으로 한다.The first means of the present invention for solving the above problems is a capillary for wire bonding apparatus provided with a face angle on the front end surface, the capillary is a bottle neck type, the face angle is 16 to 19 degrees It is done.
상기 과제를 해결하기 위한 본발명의 제2 수단은 선단면에 페이스 각도를 설치한 와이어본딩징치용 캐필러리에서 상기 캐필러리는 보틀네크형으로서 와이어직경이 10∼40㎛일때에 상기 페이스 각도가 16∼19도인 것을 특징으로 한다.The second means of the present invention for solving the above problems is the capillary in the wire bonding device capillary provided with a face angle on the front end face is the bottle neck type, the face angle when the wire diameter is 10 to 40㎛ Is characterized by being 16 to 19 degrees.
본발명의 일실시 형태를 도 1 및 도 2에 의하여 설명한다. 더욱이 도 3 및 도 4와 같거나 또는 상당부분에는 동일부호를 붙여 설명한다. 도 1에 도시하는 바와같이 본 실시의 형태에 있어서 보틀네크형 캐필러리(2)는 선단면의 페이스각도 FA가 16∼19도로 형성되어 있다.An embodiment of the present invention will be described with reference to FIGS. 1 and 2. 3 and 4, the same or equivalent parts will be described with the same reference numerals. As shown in FIG. 1, in this embodiment, the bottleneck capillary 2 is formed with a face angle FA of the tip end face of 16 to 19 degrees.
도 2(a)에 도시하는 바와같이 고계단차·단루프의 본딩에서 캐필러리(2)가 와이어(7)의 선단에 형성된 볼을 제1본딩점(4)에 본딩후에 상승하고 그후 제2본딩점(6)에 하강할때에 페이스각도 FA가 16∼19도이면 실험의 결과 아우터 래디어스 OR부의 반경을 크게하지 않더라도 와이어(7)와 캐필러리(2)의 아우터 래디어스 OR부의 접촉을 없게할 수 있었다. 이 때문에 와이어(7)를 질질끄는일 없이 도 2(b)에 도시하는 바와같이 본딩후의 루프높이가 낮아지는 일이 없음과 동시에 캐필러리(2)로 압접된 와이어(7)의 부분이 반도체칩(3)의 방향으로 휘는 일도 없고, 와이어(7)가 반도체칩(3)에 접근하는 일도 없어졌다. 또 볼네크부(7a)에 스트레스를 받지않으므로 볼네크부(7a)에서 와이어(7)가 절단하는 일도 없어졌다.As shown in Fig. 2 (a), the capillary 2 ascends the ball formed at the tip of the wire 7 after bonding to the first bonding point 4 in the bonding of the high step and the step loop, and then If the face angle FA is 16 to 19 degrees when descending to the bonding point 6, the result of the experiment shows that the outer radial OR portion of the wire 7 and the capillary 2 cannot be contacted even if the radius of the outer radial OR portion is not increased. Could not have been. For this reason, as shown in FIG. 2 (b), the height of the loop after bonding is not lowered and the portion of the wire 7 press-bonded to the capillary 2 is semi-conductor without squeezing the wire 7. There was no bending in the direction of the chip 3, and the wire 7 did not approach the semiconductor chip 3, either. In addition, since the ball neck portion 7a is not stressed, the wire 7 is no longer cut off from the ball neck portion 7a.
실험의 결과, 와이어직경이 10∼40㎛의 경우에 페이스 각도 FA 가 16∼19도이면 양호한 결과가 얻어졌다. 특히 와이어직경이 20∼30㎛의 경우에 페이스 각도 FA가 18∼19도이면 특히 양호한 결과가 얻어졌다. 또 페이스 각도 FA가 16∼19도이면, 접합성에 대하여 하등 문제가 생기지 않았다.As a result of the experiment, good results were obtained when the face angle FA was 16 to 19 degrees when the wire diameter was 10 to 40 µm. Particularly good results were obtained when the face angle FA was 18 to 19 degrees when the wire diameter was 20 to 30 µm. Moreover, if face angle FA is 16-19 degree | times, no problem arose about joinability.
본발명에 의하면 캐필러리는 보틀네크형으로서, 페이스 각도가 16∼19도이므로, 고계단차·단루프의 와이어본딩에 있어서도 안정한 루프높이가 얻어짐과 동시에 볼네크부에서의 와이어 절단이 방지된다.According to the present invention, the capillary is a bottle neck type, and the face angle is 16 to 19 degrees, so that a stable loop height can be obtained even at high step and step loop wire bonding, and wire cutting at the ball neck portion is prevented. do.
Claims (2)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP97-316371 | 1997-10-31 | ||
| JP9316371A JPH11135542A (en) | 1997-10-31 | 1997-10-31 | Capillary for wire bonding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR19990037258A true KR19990037258A (en) | 1999-05-25 |
Family
ID=18076360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980044084A KR19990037258A (en) | 1997-10-31 | 1998-10-21 | Capillary for Wire Bonding Device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH11135542A (en) |
| KR (1) | KR19990037258A (en) |
| TW (1) | TW406862U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2444999A4 (en) | 2009-06-18 | 2012-11-14 | Rohm Co Ltd | Semiconductor device |
-
1997
- 1997-10-31 JP JP9316371A patent/JPH11135542A/en not_active Withdrawn
-
1998
- 1998-09-29 TW TW087216136U patent/TW406862U/en not_active IP Right Cessation
- 1998-10-21 KR KR1019980044084A patent/KR19990037258A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| TW406862U (en) | 2000-09-21 |
| JPH11135542A (en) | 1999-05-21 |
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