KR19990012987A - Transverse electric field liquid crystal display device - Google Patents

Abstract

In the transverse electric field liquid crystal display device of the present invention, a light blocking electrode is formed in a gate electrode area on a passivation layer on which a common electrode is formed to serve as a back gate electrode, and light is incident on a semiconductor layer from a backlight or the outside to leak into a thin film transistor. Prevents current from occurring The common electrode overlaps a portion of the gate wiring and the data wiring to block an electric field by the gate wiring and the data wiring, thereby preventing the foreground from occurring in the image.

Description

Transverse electric field liquid crystal display device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and to a transverse electric field type liquid crystal display device having high brightness, high definition, and low manufacturing cost.

Recently, a large area has been strongly demanded in thin film transistor liquid crystal displays (TFT LCDs), which are widely used in portable televisions and notebook computers. However, the above-described TFT LCDs have a problem in that contrast ratio is changed depending on the viewing angle. In order to solve this problem, various liquid crystal display devices such as a twisted nematic liquid crystal display device equipped with an optical compensation plate and a multi-domain liquid crystal display device have been proposed. It is difficult to solve the problem that the contrast ratio decreases and the color changes depending on the viewing angle.

Another type of liquid crystal display device that is proposed to realize a wide viewing angle is a liquid crystal display device of the in plane switching mode (JAPAN DISPLAY 92 P547, Japanese Patent Laid-Open No. 7-36058, Japanese Patent Laid-Open No. 7-225538, It is proposed to ASIA DISPALY 95 P107.

1 is a view showing a conventional transverse electric field type liquid crystal display device. In the conventional transverse electric field type liquid crystal display device, as shown in FIG. 1A, the gate line 1 and the data line 2 are arranged on the first substrate 10 to define a pixel area. The common wiring 3 arranged in the pixel in parallel with the gate wiring 1, the thin film transistor arranged at the intersection of the gate wiring 1 and the data wiring 2, and the data wiring 2 in the pixel. And a data electrode 8 and a common electrode 9 arranged in substantially parallel with each other. As shown in FIG. 1B, the TFT may include a gate electrode 5 formed on the first substrate 10 and connected to the gate wiring 1, and a gate insulating layer stacked on the gate electrode 5. 12), it is formed on the active layer 15 and the n ⁺ layer 16 and the one n ⁺ layer 16 is formed on the above-described active layer 15 formed on the gate insulating film 12, data wire (2 ) And a source electrode 6 and a drain electrode 7 respectively connected to the data electrode 8. The common electrode 9 in the pixel is formed on the first substrate 10 and connected to the common wiring 3, and the data electrode 8 is formed on the gate insulating film 12 and connected to the drain electrode 7 of the thin film transistor. . A protective film 20 is stacked on the thin film transistor, the data electrode 8 and the gate insulating film 12, and the first alignment film 23a is coated thereon, and the orientation direction is determined.

The second substrate 11 is formed with a light blocking layer 28 that prevents light leakage near the thin film transistor, the gate wiring 1, the data wiring 2, and the common wiring 3. 29) and the second alignment film 23b are formed. In addition, a liquid crystal layer 30 is formed between the first substrate 10 and the second substrate 11.

In the transverse electric field type liquid crystal display device configured as described above, when a voltage is applied from an external driving circuit, a transverse electric field parallel to the substrates 10 and 11 is generated between the data electrode 8 and the common electrode 9. . Accordingly, the liquid crystal molecules oriented in the liquid crystal layer 30 rotate along the above-described transverse electric field, thereby controlling the amount of light passing through the liquid crystal layer 30.

However, the above-described conventional transverse electric field type liquid crystal display has the following problems. First, since the light shielding layer 28 is formed to prevent light leakage near the gate wiring 1, the data wiring 2, and the thin film transistor, the manufacturing cost increases. In addition, in order to form the light-shielding layer 28 described above, since a metal such as Cr or CrOx must be laminated and etched or coated with a black resin or the like, there is also a problem that the yield decreases. Second, since the passivation layer 20 is stacked on the data electrode 8 and the gate insulating layer 12 and the passivation layer 20 are formed on the common electrode 9, the transverse electric field applied to the liquid crystal layer 30 is the above-mentioned. The strength of the transverse electric field absorbed by the gate insulating film 12 and the protective film 20 and applied to the liquid crystal layer 30 is reduced. Therefore, the driving speed of the liquid crystal molecules is lowered, which causes the screen to break when the video is implemented. Third, when the first substrate 10 and the second substrate 11 are not bonded correctly, the black mask 28 may invade the pixel region and the aperture ratio is lowered. It is difficult. Fourth, a pixel region in which an actual image is realized with the gate wiring 1 and the data wiring 2 in order to prevent crosstalk due to the electric field generated by the gate wiring 1 and the data wiring 2. Since the distance must be at least a certain distance, the aperture ratio is further lowered.

SUMMARY OF THE INVENTION The present invention has been made in view of the above, and has a transverse electric field type liquid crystal display device in which a light shielding electrode is formed on a portion of a gate electrode and a gate wiring, and the light shielding electrode is connected to the gate wiring to achieve high brightness and reduced manufacturing cost. It aims to provide.

Another object of the present invention is to provide a transverse electric field type liquid crystal display device having a common electrode overlapping a portion of a gate wiring and a data wiring to block the electric field by the gate wiring and the data wiring, thereby preventing the foreground and improving the aperture ratio. will be.

In order to achieve the above object, a transverse electric field liquid crystal display device according to the present invention comprises a gate wiring and a data wiring for defining a pixel region by crossing the first substrate and the second substrate, and vertically and horizontally on the first substrate; A thin film transistor disposed at an intersection of the gate wiring and the data wiring, a common wiring arranged in parallel with the gate wiring in a pixel region, a data electrode arranged in parallel with the data wiring in the pixel region, and A common electrode arranged in parallel with one data electrode, a light blocking electrode formed on the thin film transistor and a portion of the gate wiring so as to be connected to the gate wiring, and serving as a back gate electrode, and preventing light from being incident on the thin film transistor; And a first alignment layer applied over the entire first substrate, a color filter layer formed on the second substrate, and the color filter layer. The first consists of a liquid crystal layer formed between the second alignment layer and, above the first substrate and the second substrate applied to.

The thin film transistor includes a gate electrode connected to a gate wiring, a gate insulating film stacked over the first substrate on the gate electrode, an active layer formed on the gate insulating film, an n ⁺ layer formed on the active layer, and a source electrode and a drain electrode formed on the n ⁺ layer.

The data electrode is formed on the gate insulating film and connected to the drain electrode, and the common electrode is formed on the passivation film and connected to the common wiring through the hole. The data electrode and the common electrode form an additional capacitance therebetween, thereby applying a double additional capacitance to the entire liquid crystal display device. In addition, the light blocking electrode is simultaneously formed on the same layer as the common electrode and connected to the gate wiring through the hole of the protective film.

According to another aspect of the present invention, there is provided a transverse electric field type liquid crystal display device comprising: a gate wiring and a data wiring defining a pixel region by crossing the first substrate and the second substrate vertically and horizontally on the first substrate; A thin film transistor arranged at an intersection of the data lines, a common line arranged in parallel with the gate line in the pixel area, a data electrode arranged in parallel with the data line in the pixel area, and parallel to the data electrode And a common electrode which overlaps a portion of the gate line and the data line to block an electric field from the gate line and the data line, and is formed on a portion of the gate electrode and the gate line of the thin film transistor and formed through a hole in the protective layer. Light is irradiated to the active layer of the thin film transistor while being connected to the gate wiring and serving as a back gate electrode. A light shielding electrode for preventing, a first alignment film applied over the first substrate, a color filter layer formed on the second substrate, a second alignment film applied on the color filter layer, and the first substrate; It consists of a liquid crystal layer formed between 2nd board | substrates.

1 is a view showing a conventional transverse electric field type liquid crystal display device.

2 is a plan view of a transverse electric field type liquid crystal display device according to a first embodiment of the present invention.

FIG. 3A is a cross-sectional view taken along the line BB ′ of FIG. 2.

FIG. 3B is a cross-sectional view taken along the line CC 'of FIG. 2.

(C) is sectional drawing in the DD 'line | wire of FIG.

Fig. 4 is a diagram showing the optical axis direction in the transverse electric field type liquid crystal display device according to the first embodiment of the present invention.

5 is a schematic diagram showing driving of liquid crystal molecules in a transverse electric field type liquid crystal display device according to the present invention;

6 is a block diagram of a liquid crystal panel according to the present invention.

7 is a configuration diagram of a transverse electric field type liquid crystal display device to which the present invention is applied.

8 is a plan view of a transverse electric field type liquid crystal display device according to a second embodiment of the present invention.

-Explanation of symbols for the main parts of the drawings-

101, 201: gate wiring 102, 202: data wiring

103, 203: common wiring 105, 205: gate electrode

106, 206: source electrode 107, 207: drain electrode

108, 208: data electrode 109, 209: common electrode

110: first substrate 111: second substrate

112: gate insulating film 115: active layer

116: n ⁺ layer 123: alignment layer

125, 225, 325: hole 130: liquid crystal layer

132, 133: liquid crystal molecules 135: polarizing plate

136: detection plate 139: liquid crystal panel

140: display unit 145: frame

147: backlight housing 148: backlight

149: light guide plate 150: gate driving circuit

151: gate pad 154: data driving circuit

155: data pad 157: common pad

160: light blocking electrode 161: hole

165: external ground circuit 167: antistatic circuit

Hereinafter, a transverse electric field type liquid crystal display device according to the present invention will be described in detail with reference to the accompanying drawings.

2 is a diagram showing a first embodiment of the present invention. As shown in the figure, a plurality of gate wirings 101 and data wirings 102 are arranged on a substrate to define a pixel region. In the actual liquid crystal display device, n x m pixels exist by the n gate wirings 101 and the m data wirings 102, but only one pixel is shown in the drawing for convenience of description. The common wiring 103 is arranged in parallel with the gate wiring 101 in the pixel, and a thin film transistor is disposed at the intersection of the gate wiring 101 and the data wiring 102. The data electrode 108 and the common electrode 109 arranged in the pixel are arranged in parallel with the data wiring 102. In this case, the data electrode 108 and the common electrode 109 are also formed on the common wiring 103, respectively. The common electrode 109 is connected to the common wiring 103 through the hole 125 of the passivation layer. In addition, as shown in the drawing, a light blocking electrode 160 is formed on a portion of the gate electrode 105 and the gate wiring 101 of the thin film transistor and is connected to the gate wiring 101 through the hole 161.

(A) is sectional drawing in the BB 'line | wire of FIG. As shown in the drawing, the thin film transistor is formed on the gate electrode 105 formed on the first substrate 110, the gate insulating film 112 stacked on the gate electrode 105, and on the gate insulating film 112. The active layer 115 and the n ⁺ layer 116 formed on the active layer 115 and the source electrode 106 and the drain electrode 107 formed on the n ⁺ layer 116 described above. The gate electrode 105 is formed at the same time as the gate wiring 101 and the common wiring 103. The gate electrode 105 is formed by etching a double film made of an Al thin film having a thickness of 2000 GPa and a Mo thin film having a thickness of 1000 GPa by a sputtering method. The gate insulating film 112 is formed by stacking an inorganic material, such as SiNx, on the entire first substrate 110 to a thickness of 4000 kPa by a chemical vapor deposition (CVD) method. The active layer 115 and the n ⁺ layer 116 are formed by etching 1700 Å thick amorphous silicon (a-Si) and 300 Å thick n ⁺ a-Si deposited by the CVD method. The data wiring 102, the source electrode 106, the drain electrode 107, and the data electrode 108 are formed by etching a 1500 Å thick Cr thin film deposited by a sputtering method. As shown in FIG. 2, the gate electrode 105 of the thin film transistor is connected to the gate wiring 101, the source electrode 106 is connected to the data wiring 102, and the drain electrode 107 is connected to the data electrode 108. Is connected to.

On the thin film transistor, the gator wiring 108 and the gate insulating film 112, a protective film 120 made of SiNx having a thickness of 2000 Å is stacked, and a common electrode 109 is formed thereon. The common electrode 109 is formed by etching a Mo thin film or an ITO / MO thin film of about 1000 mW stacked by a sputtering method.

The light blocking electrode 160 is formed in the gate electrode 105 and the gate wiring 101 region on the passivation layer 120. The light blocking electrode 160 is a Mo metal layer having a thickness of about 1000 mV formed by the same process as the common electrode 109. As shown in FIG. 3 (b), the hole 161 formed in the gate insulating film 112 and the protective film 120 is formed. It is electrically connected to the gate wiring 101 through. Therefore, when voltage is applied to the gate electrode 105 from the external driving circuit, the light blocking electrode 160 also forms a coin phase with the gate electrode 105.

Since the light blocking electrode 160 is formed directly on the gate electrode 105 with the passivation layer 120 interposed therebetween, light from the backlight or the outside is prevented from entering the active layer 115 of the thin film transistor. Therefore, since the active layer 115 is excited by the incident light in the off state of the thin film transistor and prevents leakage current, the image quality is further improved. In addition, since the light shielding electrode 160 is formed directly on the gate electrode 105, it becomes possible to use a high intensity backlight and the luminance is improved. Furthermore, since the light blocking electrode 160 is connected to the gate wiring 101 through the hole 161 to form a coincidence with the gate electrode 105, the light blocking electrode 160 is a back gate electrode (back). It acts as a gate electrode, increasing the on-current of the thin film transistor. The increase in the on-current is a factor to improve the switching speed of the thin film transistor. When the specific switching speed is required as in the conventional liquid crystal display device, the thin film transistor can be made small, so that the thin film transistor can be fixed. .

Unlike the related art, since the black mask is not formed on the second substrate 111, the manufacturing cost increases and the opening ratio decrease due to the precision of the bonding does not occur.

The first alignment layer 123a is coated on the common electrode 109 and the passivation layer 120. Although the alignment direction 123a made of polyimide is determined by mechanical rubbing, the alignment film 123a made of photoreactive material such as polyvinylcinnemate (PVCN) -based material or polysiloxane-based material is irradiated with light such as ultraviolet rays. The orientation direction is determined by. In the optical alignment process described above, the alignment direction is determined according to whether the irradiated light is polarized, the polarization direction, and the number of irradiation times. In general, in the case where the above-described polysiloxane-based material or PVCN-based material is used as the alignment film, the alignment direction is determined by irradiating the ultraviolet light once or twice. The method of irradiating light once includes a method of obliquely irradiating unpolarized light with respect to the alignment layer, a method of obliquely irradiating polarized (particularly linearly polarized) light, a method of obliquely irradiating partially polarized light, and the like. In the method of irradiating twice, the two degeneracy alignment directions are determined by inclining or vertically irradiating the polarized light with respect to the alignment layer once, and then irradiating the polarized light again to select a desired direction among the two alignment directions. .

As shown in FIG. 2, a hole 125 is formed in the passivation layer 120 so that the common electrode 109 is connected to the common wiring 103 through the hole. (C) is sectional drawing in the DD 'line | wire of FIG. 2 which shows said connection. As shown in the figure, the data electrode 108 and the common electrode 109 are connected to metal wirings formed on the gate insulating film 112 and the passivation layer 120, respectively. Of course, these metal wires are simultaneously formed of the same metal as the data electrode 108 and the common electrode 109, respectively. Therefore, the gate insulating film 112 and the metal wiring to which the data electrode 108 is connected and the common wiring 103 are connected between the metal wiring to which the common electrode 109 is connected and the metal wiring to which the data electrode 108 is connected, respectively. Since the passivation layer 120 is stacked, as shown in the drawing, the storage capacity Cst is equal to the additional capacitance Cst1 and the common wiring 103 between the data electrode 108 and the common electrode 109. The sum of the additional capacitances Cst2 between the data electrodes 108 is greater than the conventional additional capacitance Cst2. Therefore, not only the voltage applied to the liquid crystal layer 130 is further stabilized, but also when the additional capacitance similar to the conventional one is provided, the opening ratio can be further improved by reducing the additional capacitance area. In addition, since the common electrode 109 is formed on the passivation layer 120, absorption of an electric field by the insulating layer does not occur, and an electric field of strong intensity is applied to the liquid crystal layer 130. Therefore, the driving voltage can be lowered.

The color filter layer 129 is formed on the second substrate 111. In the color filter layer 129, R, G, and B layers are repeatedly formed for each pixel. After the second alignment layer 123b made of polyimide or a photoreactive material is coated on the color filter layer 129, the orientation direction is determined by rubbing or irradiation of light. In addition, a liquid crystal is injected in a vacuum state between the first substrate 110 and the second substrate 111 to form the liquid crystal layer 130.

4 is a view showing the optical axis direction of the liquid crystal display device according to the first embodiment of the present invention, Figure 5 is a view showing the driving of the liquid crystal molecules. In the figure, θ _EL , θ _R , θ _E represent the extension direction of the data electrode 108 and the common electrode 109, the alignment direction of the alignment film, and the transverse electric field direction between the electrodes 108, 109, respectively. As shown in the figure, the data electrode 108 and the common electrode 109 are arranged in parallel with the extending direction of the data wiring 102 (θ _EL = 90 °). The orientation direction θ _R determined in the alignment film is 0 ° <θ _R <90 °, and the liquid crystal molecules are aligned along the above-described orientation direction θ _R as shown in FIG. 5. When a voltage is applied to the electrode to generate a transverse electric field of θ _E = 0 ° between the electrodes 108 and 109, the liquid crystal molecules 132 are rotated clockwise to be oriented along the electric field direction θ _E. In the figure, the dashed liquid crystal molecules 132 are liquid crystal molecules when no voltage is applied, and the solid liquid crystal molecules 133 are liquid crystal molecules when voltage is applied.

6 illustrates a thin film transistor array substrate to which the present invention is applied. As shown in the figure, the gate wiring 101 and the data wiring 102 arranged vertically and horizontally are connected to the external driving circuit through the gate pad 151 and the data pad 155, respectively. The gate wiring 101 and the data wiring 102 are connected to the outer circumferential ground wiring 165 through an antistatic circuit 167 composed of a thin film transistor. In addition, an antistatic circuit 167 is formed between the gate wiring 101 and the data wiring 102. The source electrode and the drain electrode of the antistatic circuit 167 are connected to the data wiring 102. In addition, the common wiring 103 is also grounded to the outside through the common pad 157. Although not shown in the figure, the pads 151, 155, and 157 are composed of a plurality of metal layers. Mo / Al layer is mainly used as the first metal layer and Cr layer is used as the second metal layer. In addition, when the ITO / Mo film is used as the common electrode 109 on the passivation layer 120, the ITO is laminated on the pads 151, 155, and 157, whereby the metal layer of the pad is oxidized to increase the contact resistance. It can be prevented.

7 is a view showing the configuration of a transverse electric field type liquid crystal display device according to the present invention. FIG. 7 (a) is a plan view and FIG. 7 (b) is a cross-sectional view taken along the line E-E 'of FIG. 7 (a). As shown in FIG. 7A, the gate driver circuit 150 and the data driver circuit 154 are disposed in the frame 145 outside the display unit 140 to provide the gate pad 151 and the data pad 155. The gate line 101 and the data line 102 of the display unit 140 are connected to each other.

As shown in FIG. 7B, a backlight 148 is mounted in the back light housing 147 on the frame 145 to project light onto the liquid crystal panel 139 through the light guide plate 149. do. A polarizing plate 135 for linearly polarizing the projected light is attached between the light guide plate 149 and the liquid crystal panel 139, and an analyzer 136 is attached to the outside of the liquid crystal panel 139.

8 is a diagram showing a second embodiment of the present invention. As shown in the drawing, the second embodiment is the same as the first embodiment except for the shape of the common electrode 209. That is, a thin film transistor is formed at the intersection of the gate wiring 201 and the data wiring 202, and the data electrode 208 in the pixel region is the same as the source electrode 206 and the drain electrode 207 of the thin film transistor. Formed in layers. The common electrode 209 arranged on the passivation layer 209 overlaps the gate wiring 201 and a portion of the data wiring 202 and is electrically connected to the common wiring 203 through the hole 225. As a result of the overlap, the common electrode 209 blocks the electric field generated from the gate wiring 201 and the data wiring 202 to prevent the occurrence of foreground on the screen. In addition, the overlapped portion serves as a black mask to prevent light from leaking near the gate wiring 201 and the data wiring 202. Therefore, not only the manufacturing cost can be reduced, but also the opening ratio decrease due to the poor bonding of the first substrate 110 and the second substrate 111 can be prevented. Also in the second embodiment, the light blocking electrode 260 is formed on a portion of the gate electrode 205 and the gate wiring 201 to serve as a back gate electrode and to prevent light from being incident on the active layer 215 from the backlight and the outside. . As described above, when the common electrode 209 overlaps the gate wiring 201 and the data wiring 202, parasitic capacitances of the gate wiring 201 and the data wiring 202 may increase, resulting in signal delay. have. In this case, if the gate wiring 201 and the data wiring 202 are used as the Mo thin film, the Mo / Al / Mo thin film, and the Cr / Al / Cr foil made of a low resistance material, the above problem of signal delay can be solved. Will be.

As described above, unlike the conventional liquid crystal display device in which the light blocking layer prevents light from entering the thin film transistor, the light blocking electrode is formed on a portion of the gate electrode and the gate wiring to serve as a back gate electrode. At the same time, since light is prevented from being incident on the active layer of the thin film transistor to prevent leakage current, the image quality can be improved, and a high-definition transverse electric field type liquid crystal display device can be manufactured, and manufacturing cost can be greatly reduced. In addition, since the common electrode overlaps a part of the gate wiring and the data wiring, the pixel region is actually implemented in order to prevent crosstalk caused by the gate wiring and the data wiring in the conventional transverse type liquid crystal display device. The aperture ratio is significantly improved compared with forming the pixel region such that the gate wiring and the data wiring are separated by a predetermined distance or more.

Claims (42)

A first substrate and a second substrate; A plurality of gate wirings and data wirings arranged vertically and horizontally on the first substrate to define a pixel area; A plurality of thin film transistors disposed at intersections of the gate lines and the data lines; A common wiring formed in the pixel in parallel with the gate wiring; At least a pair of electrodes formed in the pixel to apply a transverse electric field parallel to the surface of the substrate; A transverse electric field liquid crystal display device composed of a metal layer formed on the thin film transistor. The transverse electric field liquid crystal display device according to claim 1, wherein the pair of electrodes are a common electrode and a data electrode. The method of claim 1, A protective film for holding a hole applied over the entire first substrate; A first alignment film coated on the protective film; A second alignment layer coated on the second substrate; A transverse electric field type liquid crystal display device further comprising a liquid crystal layer formed between the first substrate and the second substrate. The transverse electric field liquid crystal display device according to claim 3, wherein a metal layer is formed on the protective film. The transverse electric field liquid crystal display device according to claim 4, wherein the metal layer is connected to the gate wiring through a hole. According to claim 1, wherein the thin film transistor, A gate electrode formed on the first substrate; A gate insulating film formed on the gate electrode; A semiconductor layer formed on the gate insulating film; A transverse electric field liquid crystal display device comprising a source electrode and a drain electrode formed on the semiconductor layer. The transverse electric field liquid crystal display device according to claim 3, wherein the first alignment layer is a polyimide or a photoreactive material. 8. The transverse electric field liquid crystal display device according to claim 7, wherein the photoreactive material is selected from the group consisting of a polyvinylcinnamate (PVCN) material and a polysiloxane material. The transverse electric field liquid crystal display device according to claim 3, wherein the second alignment layer is a polyimide or a photoreactive material. The transverse electric field liquid crystal display device according to claim 9, wherein the photoreactive material is selected from the group consisting of a polyvinylcinnamate (PVCN) material and a polysiloxane material. A first substrate and a second substrate; A plurality of gate wirings and data wirings arranged vertically and horizontally on the first substrate to define a pixel area; A gate electrode, a gate insulating film formed on the gate electrode, a semiconductor layer formed on the gate insulating film, a source electrode and a drain electrode formed on the semiconductor layer; A plurality of transistors; A common wiring formed in the pixel; A first electrode formed on the gate insulating film in the pixel; A protective film laminated over the entire first substrate; A second electrode formed in parallel with the first electrode on the passivation layer in the pixel; A transverse electric field liquid crystal display device comprising a metal layer formed in a gate electrode region on the passivation layer and a portion of the gate wiring. The transverse electric field liquid crystal display device according to claim 11, wherein the first electrode is a data electrode and the second electrode is a common electrode. 12. The transverse electric field liquid crystal display device according to claim 11, wherein the metal layer and the second electrode are formed at the same time. The transverse electric field liquid crystal display device according to claim 11, wherein the metal layer and the second electrode are made of the same metal. The method of claim 11, And a first hole and a second hole in the passivation layer. The transverse electric field liquid crystal display device according to claim 15, wherein the metal layer and the gate wiring are connected to each other through the first hole. The method of claim 11, A first alignment film coated on the protective film; A second alignment layer coated on the second substrate; And a liquid crystal layer formed between the first substrate and the second substrate. The method of claim 11, A first metal wiring to which the first electrode is connected on the gate insulating film in the common wiring region; And a second metal wiring to which the second electrode is connected is formed on the passivation layer of the common wiring region. 19. The transverse electric field liquid crystal display device according to claim 18, wherein the first metal wiring is made of the same metal as the first electrode. 19. The transverse electric field liquid crystal display device according to claim 18, wherein the second metal wiring is made of the same metal as the second electrode. 19. The transverse electric field liquid crystal display device according to claim 18, wherein the first electrode and the second electrode form an additional capacitance. The transverse electric field liquid crystal display device according to claim 18, wherein the second metal wiring is connected to the common wiring through the second hole. 18. The transverse electric field liquid crystal display device according to claim 17, wherein the first alignment layer is a polyimide or a photoreactive material. 24. The transverse electric field liquid crystal display device according to claim 23, wherein the photoreactive material is selected from the group consisting of polyvinylcinnamate (PVCN) material and polysiloxane material. 18. The transverse electric field liquid crystal display device according to claim 17, wherein the second alignment layer is polyimide or photoreactive material. The transverse electric field liquid crystal display device according to claim 25, wherein the photoreactive material is selected from the group consisting of a polyvinylcinnamate (PVCN) material and a polysiloxane material. A first substrate and a second substrate; A plurality of gate wirings and data wirings arranged vertically and horizontally on the first substrate to define a pixel area; A gate electrode, a gate insulating film formed on the gate electrode, a semiconductor layer formed on the gate insulating film, a source electrode and a drain electrode formed on the semiconductor layer; A plurality of transistors; A common wiring formed in the pixel; A first electrode formed on the gate insulating film in the pixel; A protective film laminated over the entire first substrate; A second electrode formed on the passivation layer in the pixel in parallel with the first electrode and overlapping a portion of the gate line and the data line; A transverse electric field liquid crystal display device comprising a metal layer formed in a gate electrode region on the passivation layer and a portion of the gate wiring. 28. The transverse electric field liquid crystal display device according to claim 27, wherein the first electrode is a data electrode and the second electrode is a common electrode. 28. The transverse electric field liquid crystal display according to claim 27, wherein the metal layer and the second electrode are formed at the same time. 28. The transverse electric field liquid crystal display according to claim 27, wherein the metal layer and the second electrode are made of the same metal. The method of claim 27, And a first hole and a second hole in the passivation layer. 32. The transverse electric field liquid crystal display device according to claim 31, wherein the metal layer and the gate wiring are connected through the first hole. The method of claim 27, A first alignment film coated on the protective film; A second alignment layer coated on the second substrate; And a liquid crystal layer formed between the first substrate and the second substrate. The method of claim 27, A first metal wiring to which the first electrode is connected on the gate insulating film in the common wiring region; And a second metal wiring to which the second electrode is connected is formed on the passivation layer of the common wiring region. 35. The transverse electric field liquid crystal display device according to claim 34, wherein the first metal wiring is made of the same metal as the first electrode. 35. The transverse electric field liquid crystal display device according to claim 34, wherein the second metal wiring is made of the same metal as the second electrode. 35. The transverse electric field liquid crystal display device according to claim 34, wherein the first electrode and the second electrode form an additional capacitance. 35. The transverse electric field liquid crystal display device according to claim 34, wherein the second metal wiring is connected to the common wiring through the second hole. 34. The transverse electric field liquid crystal display according to claim 33, wherein the first alignment layer is a polyimide or a photoreactive material. 40. The transverse electric field liquid crystal display according to claim 39, wherein the photoreactive material is selected from the group consisting of polyvinylcinnamate (PVCN) material and polysiloxane material. 34. The transverse electric field liquid crystal display according to claim 33, wherein the second alignment layer is a polyimide or a photoreactive material. 42. The transverse electric field liquid crystal display device according to claim 41, wherein the photoreactive material is selected from the group consisting of polyvinylcinnamate (PVCN) material and polysiloxane material.