KR19990009168A - Method of manufacturing thin film transistor substrate - Google Patents
Method of manufacturing thin film transistor substrate Download PDFInfo
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- KR19990009168A KR19990009168A KR1019970031474A KR19970031474A KR19990009168A KR 19990009168 A KR19990009168 A KR 19990009168A KR 1019970031474 A KR1019970031474 A KR 1019970031474A KR 19970031474 A KR19970031474 A KR 19970031474A KR 19990009168 A KR19990009168 A KR 19990009168A
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Abstract
질화 실리콘막, 비정질 실리콘층, n+비정질 실리콘층의 삼층막을 증착하는 단계 및 어니일 단계를 포함하는 본 발명에 따른 박막 트랜지스터 액정 표시 장치의 제조 방법에서는, 삼층막 증착의 최고 온도의 ±50℃에서 어니일 공정을 실시함으로써 모빌리티를 증가시켜 기판의 스위칭 기능을 향상시킨다.In the method for manufacturing a thin film transistor liquid crystal display device according to the present invention comprising the step of depositing a three-layer film of a silicon nitride film, an amorphous silicon layer, an n + amorphous silicon layer and an annealing step, ± 50 ° C. of the maximum temperature of the three-layer film deposition. Implementing an anneal process in the process increases the mobility of the substrate by increasing the mobility.
Description
본 발명은 모빌리티(mobility) 특성을 향상시키는 박막 트랜지스터 기판의 제조 방법에 관한 것으로서, 특히 어니일(anneal)의 공정 온도를 최적화한 박막 트랜지스터 기판의 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thin film transistor substrate that improves mobility characteristics, and more particularly, to a method of manufacturing a thin film transistor substrate optimized for annealing process temperature.
박막 트랜지스터 액정 표시 장치는 날이 갈수록 고정세 및 대면적화되고 있다. 이렇게 기판이 고정세화, 대형화되면서 신호 지연의 문제가 발생하고, 이의 해결을 위해 데이터선의 형성을 위한 저저항 물질의 개발 등의 연구가 진행되고 있다.Thin film transistor liquid crystal display devices are becoming more and more high in size and area. As the substrate becomes more fine and larger in size, there is a problem of signal delay, and in order to solve this problem, researches on the development of a low resistance material for forming a data line have been conducted.
그러면, 종래의 기술에 따른 박막 트랜지스터 기판의 제조 방법 및 특성에 대하여 간단히 설명한다.The manufacturing method and characteristics of the thin film transistor substrate according to the related art will now be briefly described.
종래의 박막 트랜지스터 기판의 제조 공정에서는 게이트 전극의 형성 이후, 질화 실리콘층, 비정질 실리콘층, n+비정질 실리콘층의 삼층막을 증착할 때, 각각 350℃, 275℃, 275℃의 온도에서 증착시키고, 소스-드레인 전극의 형성 및 ITO 화소 전극의 형성이후의 어니일링(annealing) 공정은 200 ℃의 온도에서 두 시간 가량 실시하였다. 이러한 온도에서 제조된 종래의 15.1 기판의 모빌리티는 약 0.4∼0.5 cm2/V·sec 수준으로서, 이러한 모빌리티는 10 기판에서는 충분히 대응될 수 있지만 1cm2/V·sec 이상의 모빌리티가 요구되는 20 급 기판에서는 표시 장치의 스위칭(switching) 효과가 떨어진다.In the conventional manufacturing process of the thin film transistor substrate, after the formation of the gate electrode, when the three-layer film of the silicon nitride layer, the amorphous silicon layer, n + amorphous silicon layer is deposited, it is deposited at a temperature of 350 ℃, 275 ℃, 275 ℃, The annealing process after the formation of the source-drain electrode and the formation of the ITO pixel electrode was performed for about two hours at a temperature of 200 ° C. The mobility of the conventional 15.1 substrate manufactured at such a temperature is about 0.4 to 0.5 cm 2 / V · sec. Such a mobility can be sufficiently coped with 10 substrates, but a 20 class substrate requiring mobility of 1 cm 2 / V · sec or more is required. In the switching effect of the display device is inferior.
본 발명은 기판의 대면적화에 따른 앞 선 요구를 해결하기 위한 것으로서, 모빌리티를 향상시키기 위한 박막 트랜지스터 기판의 제조 방법을 제시하는 것을 그 과제로 한다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned demands due to the large area of the substrate, and to provide a method for manufacturing a thin film transistor substrate for improving mobility.
질화 실리콘막, 비정질 실리콘층, n+비정질 실리콘층의 삼층막을 증착하는 단계 및 어니일 단계를 포함하는 박막 트랜지스터 액정 표시 장치의 제조 방법에 있어서, 앞 선 과제를 해결하기 위한 본 발명에 따른 박막 트랜지스터 기판의 제조 방법은 삼층막 증착의 최고 온도의 ±50℃에서 어니일 공정을 실시하는 것을 특징으로 한다.In the method for manufacturing a thin film transistor liquid crystal display device comprising the steps of depositing a three-layer film of a silicon nitride film, an amorphous silicon layer, an n + amorphous silicon layer and an annealing step, the thin film transistor according to the present invention for solving the foregoing problems. The manufacturing method of a board | substrate is characterized by performing an annealing process at +/- 50 degreeC of the highest temperature of three-layer film deposition.
이러한 박막 트랜지스터 기판의 제조 방법은 기판 내의 모빌리티를 증가시키는 작용을 한다.Such a method of manufacturing a thin film transistor substrate serves to increase the mobility in the substrate.
그러면, 본 발명에 따른 박막 트랜지스터 기판의 제조 방법에 대하여 본 발명의 기술 분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 상세하게 설명한다.Then, the method for manufacturing the thin film transistor substrate according to the present invention will be described in detail so that a person skilled in the art can easily perform the method.
본 발명에서는 종래와 마찬가지로 질화 실리콘막, 비정질 실리콘층, n+비정질 실리콘층의 삼층막의 증착을 각각 350℃, 275℃, 275℃의 온도에서 실시하고, 어니일링은 삼층막 증착 온도 중 최고 온도인 350℃ 부근, 즉 350±50℃에서 실시한다. 350±50℃에서 어니일 한 경우 스핀 밀도가 최소가 되고 화학 결합이 감소되므로 모빌리티가 증가된다.In the present invention, as in the prior art, the deposition of the three-layer film of the silicon nitride film, the amorphous silicon layer, and the n + amorphous silicon layer is performed at temperatures of 350 ° C, 275 ° C and 275 ° C, respectively, and annealing is the highest temperature among the three-layer film deposition temperatures. It is performed at around 350 ° C, ie 350 ± 50 ° C. When annealed at 350 ± 50 ° C, mobility is increased because spin density is minimal and chemical bonds are reduced.
이상에서와 같이, 본 발명에서는 모빌리티를 향상시킴으로써, 대면적 액정 표시 장치에서의 스위칭 기능이 향상되는 효과가 있다.As described above, in the present invention, the switching function in the large-area liquid crystal display device is improved by improving mobility.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970031474A KR19990009168A (en) | 1997-07-08 | 1997-07-08 | Method of manufacturing thin film transistor substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970031474A KR19990009168A (en) | 1997-07-08 | 1997-07-08 | Method of manufacturing thin film transistor substrate |
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| KR19990009168A true KR19990009168A (en) | 1999-02-05 |
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| KR1019970031474A KR19990009168A (en) | 1997-07-08 | 1997-07-08 | Method of manufacturing thin film transistor substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100652126B1 (en) * | 2005-07-29 | 2006-12-01 | 두리산업 주식회사 | Liquid detection device of diatomaceous earth filter |
| KR20190011848A (en) | 2017-07-25 | 2019-02-08 | 주식회사 진텍 | capacitive types fluid detector sensing apparatus |
-
1997
- 1997-07-08 KR KR1019970031474A patent/KR19990009168A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100652126B1 (en) * | 2005-07-29 | 2006-12-01 | 두리산업 주식회사 | Liquid detection device of diatomaceous earth filter |
| KR20190011848A (en) | 2017-07-25 | 2019-02-08 | 주식회사 진텍 | capacitive types fluid detector sensing apparatus |
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