KR19990000358A - Process of Arsenic Ion Implantation Process - Google Patents

Abstract

According to an embodiment of the present invention, a method of implanting an arsenic ion implantation method includes implanting arsenic ions into a wafer, treating the wafer with hydrofluoric acid, chemically treating the wafer, rinsing the wafer, and Drying the wafer, first rapid draining the wafer, second rapid draining the wafer, final rinsing the wafer, cleaning the wafer, and performing a thermal process on the wafer. It includes.

Description

Process of Arsenic Ion Implantation Process

The present invention relates to a method of advancing an arsenic ion implantation process, and more particularly, to a method of advancing an arsenic ion implantation process for implanting arsenic ions into a wafer in a semiconductor manufacturing process.

Semiconductor manufacturing technology requires high cleanliness due to high precision and miniaturization of products, and special manufacturing technology is required. For this reason, a technique for manufacturing a wafer in vacuum is used.

As described above, the ion implantation apparatus, which is one of the semiconductor manufacturing equipment that performs the process in vacuum, is a facility that accelerates ionized dopants at high speed and injects them into a wafer. In this case, the dopants used for ion implantation may be boron or aluminum, and various elements or compounds such as phosphorus or arsenic are used.

As shown in FIG. 1, in the conventional arsenic ion implantation process, first, a step (2) of injecting arsenic ions into a wafer is performed, followed by a step (4) of hydrofluoricating the wafer having completed the step. And performing a thermal process on the wafer (8).

At this time, the hydrofluoric acid treatment step is an essential step to etch the arsenic injected into the masked oxide after implanting arsenic into the wafer. However, in this process, fluorine and deionized water, and silicon oxide and arsenic may react to generate arsenic precipitate. This arsenic precipitate penetrates the surface of the wafer through the masked oxide in a subsequent thermal process, causing the wafer to fail. Due to this phenomenon, a large number of defective chips are generated.

The present invention is to solve such a conventional problem, the object is to provide a method of proceeding a new type of arsenic ion implantation process that can remove the arsenic deposits in the semiconductor process proceeds the ion implantation process using arsenic. There is.

1 is a process progress diagram showing a progress method of a conventional arsenic ion implantation process,

Figure 2 is a process progress diagram showing the progress of the arsenic ion implantation process according to an embodiment of the present invention,

3 is a process progress diagram illustrating in detail the cleaning step in FIG.

* Explanation of symbols for the main parts of the drawings

20: arsenic ion implantation step 30: hydrofluoric acid treatment step

40: washing step 42: chemical treatment step

43: Rinse Step 44: First Rapid Drain Rinse Step

46: second rapid drain rinse step 48: final rinse step

49: drying step 50: thermal process step

According to a feature of the present invention for achieving the above object, the method of the arsenic ion implantation process comprises the steps of implanting arsenic ions into the wafer; Hydrofluoricating the wafer; Cleaning the wafer and performing a thermal process on the wafer.

In the present invention, the cleaning step comprises the steps of chemical processing of the wafer; Rinsing the wafer and drying the wafer. The rinsing step includes a first rapid draining rinse of the wafer; Second rapid drain rinsing of the wafer and final rinsing of the wafer.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to FIGS. 2 and 3, and like reference numerals denote like elements for performing the same function.

Referring to FIG. 2, the arsenic ion implantation process according to the embodiment of the present invention comprises the steps of implanting arsenic ions into a wafer (20), performing a hydrofluoric acid treatment on the wafer (30), and treating the wafer. Cleaning step 40 and performing a thermal process on the wafer 50.

In this case, referring to FIG. 3, the cleaning step may be embodied as a step 42 for chemically processing the wafer, the step 43 for rinsing the wafer, and a step 49 for drying the wafer. In addition, the rinse step 43 includes a first quick drain rinse 44 of the wafer, a second rapid drain rinse 46 of the wafer and a final rinse of the wafer. It consists of 48.

In more detail, the step 42 of chemically treating the wafer may be performed by chemically treating the wafer in an aqueous chemical solution such as sulfuric acid or ammonia within 100 ° C. to 130 ° C., and the first quick drain rinse. In step 44 and the second rapid draining rinse step 46, the wafer is cleaned using deionized water. In the final rinsing step 48, the wafer is finally cleaned and the wafer is dried in step 49 to complete the process.

By applying the present invention as described above, since the arsenic deposits generated in the arsenic ion implantation process can be removed through the cleaning step, it is possible to prevent defects of the wafers caused by the arsenic deposits and to improve the yield of the wafer manufacturing process. have.

Claims (3)

Implanting arsenic ions into the wafer (20); Hydrofluoricating the wafer (30); Cleaning the wafer (40) and Process for the arsenic ion implantation process comprising the step (50) of performing a thermal process on the wafer. The method of claim 1, The cleaning step comprises the steps of: chemically treating the wafer; Rinsing the wafer (43) and And drying the wafer (49). The method of claim 2, The rinse step (43) comprises the steps of: (44) first rapid draining rinse the wafer; Second rapid drain rinsing of the wafer (46) and And rinsing the wafer (48).