KR19980079246A - Record liquid jetting apparatus of printhead and its method - Google Patents

Abstract

The present invention relates to a recording liquid ejecting apparatus for a printhead and a method thereof.

According to the present invention, the recording liquid is injected while the pressure of the liquid chamber is changed by the deformation generated during the phase change process of the thin film type storage alloy, so that the clogging phenomenon of the nozzle is reduced due to the large actuating force of the thin film type storage alloy. In addition, since the deformation amount of the thin film storage alloy is large, the thin film storage alloy can be manufactured in a small size, so that the density of the nozzle can be increased, the resolution can be increased, and the thin film storage alloy can be formed on the substrate using a semiconductor process. The printing liquid jetting apparatus of the increased printhead, in particular, a thin film-type storage alloy that changes shape according to temperature changes, a power supply for generating a temperature change of the thin film-type storage alloy, and the thin film-type storage alloy A liquid chamber is installed on one side and a liquid chamber for storing the recording liquid is formed, and a wall surface surrounding the liquid chamber is formed. A flow path plate having a flow path formed therein so that the recording liquid flows into the flow path, and a liquid plate area of the flow path plate provided on the flow path plate so that the recording liquid can be sprayed in the form of droplets when the thin film-type It is characterized by having a nozzle plate having a small area nozzle.

Description

Record liquid jetting apparatus of printhead and its method

1 is a cross-sectional view of a conventional heated injector,

2 is a cross-sectional view of a conventional piezoelectric element injector,

Figure 3 is an exploded perspective view of the injector of one embodiment of the present invention,

4 is a perspective view showing the recording liquid flow in one embodiment of the present invention;

Figure 5 (a) (b) is a front sectional view of the injector of one embodiment of the present invention,

Figure 6 is a side cross-sectional view of the injector of one embodiment of the present invention, (a) to (d) shows before and after operation,

7 is a diagram showing a phase change of the thin-film-type storage alloy of the present invention,

8 is a process chart showing a method of manufacturing a one-way thin film storage alloy according to the present invention;

9 is a block diagram showing a method of manufacturing a unidirectional thin film type memory alloy according to the present invention;

10 is a process chart showing a method of manufacturing a bidirectional thin film type memory alloy according to the present invention;

11 is a block diagram showing a method for manufacturing a bilateral thin film-type storage alloy according to the present invention;

12 is a diagram showing the heating time and temperature of the thin film-type storage alloy of the present invention,

13 is a cross-sectional view showing the size of the thin-film-type storage alloy of the present invention

14 is a cross-sectional view of an injector according to another embodiment of the present invention, where (a) to (d) show before and after operation.

* Description of the symbols for the main parts of the drawings *

10: substrate 11: space part

12: thin-film shape inhibiting alloy 13: euro plate

14: Liquid room 16: Euro

18: Nozzle plate 19: Nozzle

20: recording liquid 21: electrode

100: deposition step 101: heat treatment step

102: cooling step 103: exposure step

104: bending deformation step 105: recording liquid injection step

106: recording solution replenishment step 107: printing step

200: heat treatment step 201: cooling step

202: bending deformation step 203: heating step

204: learning step 205: bending deformation step

206: recording liquid injection step 207: recording liquid replenishment step

208: Printing step

The present invention relates to a recording liquid jetting apparatus and a method of a printhead, and more particularly, to reduce the pressure of the liquid chamber by deformation in the process of phase change of the thin-film-type retaining alloy so that the recording liquid is injected, thereby making it compact. The present invention relates to a recording liquid ejecting apparatus for a printhead and a method thereof, which can simplify the manufacturing process.

In general, the widely used printhead uses a DoD On Demand (DOD) method. This DOD method is increasingly used because it does not need to charge or deflect recording liquid drops, does not require high pressure, and can easily print by spraying the recording liquid droplets under atmospheric pressure. Typical spraying principles include a heating spray method using a resistance and a vibration spray method using a piezo-electric.

FIG. 1 is for explaining the principle of the heating jetting method, and there is a chamber a1 in which recording liquid is incorporated, and there is an injection port a2 from the chamber a1 toward the recording material, At the bottom of the chamber a1, on the opposite side, a resistor a3 is embedded to cause the air to expand. Therefore, the bubble inflated by the resistance causes the recording liquid in the chamber a1 to be pushed out to the injection port a2, and the recording liquid is ejected toward the recording material by the force.

However, this heating spray method causes a chemical change since the recording liquid is heated to heat, and the recording liquid adheres to the inner diameter of the injection hole (a2), causing clogging. Documents must be used, resulting in poor document retention.

2 is for explaining the principle of the vibrating injection method by the piezoelectric element, there is also a chamber (b1) in which the recording liquid is built, there is an injection port (b2) from the chamber (b1) toward the recording material, Piezoelectric elements (Piezo Transducer) is embedded in the bottom opposite the injection port is configured to cause vibration.

As described above, when the piezoelectric element b3 causes vibration at the bottom of the chamber b1, the recording liquid is pushed out to the injection hole b2 by the vibration force, and thus the recording liquid is transferred to the recording material by the vibration force. To be sprayed.

As such, the spraying method does not use heat due to the vibration of the piezoelectric element, and thus, there is a wide range of choice of the recording liquid. However, it is difficult to process the piezoelectric element, and in particular, the operation of attaching the piezoelectric element to the bottom of the chamber b1 is difficult. Since it is difficult, there exists a problem that mass productivity falls.

Also, in the conventional printhead, a shape memory alloy is used to discharge the recording liquid. Japanese Unexamined Patent Publication Nos. 57-203177, 63-57251, Pyeong 4-247680, Pyeong 2-265752, Pyeong 2-308466, and Pyeong 3-65349 disclose examples of printheads in which shape memory alloys are used. . Conventional embodiments include a plurality of shape memory alloys having different phase transformation temperatures and different thicknesses, which are configured to be bent and deformed, and those configured to be bent by a combination of the elastic member and the shape memory alloy.

However, the printhead using the conventional shape memory alloy is difficult to miniaturize the size of the head and the density of the nozzle is low, the resolution is not good, and the aspect is difficult to manufacture. In addition, since the shape memory alloy is not implemented as a thin film but a thick film having a thickness of 50 μm or more, it has disadvantages such as high power consumption during heating, long cooling time, low operating frequency, and low printing speed.

The present invention was developed to solve various problems as described above, and an object of the present invention is to allow the recording liquid to be injected while the pressure of the liquid chamber is changed by the deformation generated during the phase change process of the thin film type memory alloy. As the actuation force of the shape memory alloy is very large, the clogging phenomenon of the nozzle is reduced and the deformation amount of the thin film is large. Therefore, the thin film type memory alloy can be manufactured in a small size to increase the density of the nozzle to increase the resolution and the semiconductor thin film. The present invention provides a recording liquid jetting apparatus for a printhead and a method for increasing mass productivity since a shape memory alloy is deposited on a substrate using a manufacturing process and a required displacement can be obtained.

In order to achieve the above object, the recording liquid jetting apparatus of the printhead according to the present invention includes a thin film type retaining alloy which changes shape according to temperature change, a power supply unit for generating a temperature change of the thin film type retaining alloy, and the thin film shape. A liquid chamber installed on one side of the storage alloy and configured to store the recording liquid, and a flow path plate formed on one side of the wall surface surrounding the liquid chamber so that the recording liquid flows; It is characterized in that the nozzle plate is provided with a nozzle plate having an area smaller than the liquid chamber area of the flow path plate so that the recording liquid can be ejected in the form of droplets when the alloy is changed in shape.

The present invention uses a semiconductor thin film manufacturing process using a semiconductor thin film manufacturing process to solve the disadvantages of the conventional piezoelectric method and the method of using the air expansion by heating and the method using a conventional shape memory alloy And a portion of the substrate to be etched to form a space in which the thin film-type suppression alloy can vibrate, and to form a droplet by vibrating the thin film-type suppression alloy.

The shape memory alloy is deposited on a substrate using a semiconductor thin film manufacturing process and then heat-treated to form a thin film-type memory alloy. Therefore, a flat shape is achieved in the mother state. The deposited thin film storage alloy may have residual compressive stress in martensite, and may change the magnitude of residual compressive stress according to deposition conditions, heat treatment temperature, and time. When a portion of the substrate is etched to form a space portion, the thin film-shaped suppression alloy is warped by bending due to residual compressive stress. When the thin film storage alloy is heated, the thin film storage alloy becomes a matrix and tries to change to a flat state. At this time, the liquid chamber volume is reduced and the recording liquid is injected. During cooling, bending deformation occurs due to residual compressive stress, and recording liquid is refilled at this time. This process is repeated to perform continuous recording liquid injection.

The present invention has a simple structure and can easily realize the displacement required for spraying the recording liquid using the residual compressive stress by implementing the thin film mold suppression alloy through the semiconductor thin film manufacturing process and the substrate etching. The amount of deformation can be easily adjusted by changing the magnitude of the compressive stress, and thus the amount of displacement can be increased, thereby reducing the area of the thin film-type storage alloy. Therefore, the head can be miniaturized, and the density of the nozzle can be increased to achieve high resolution.

The use of thin film-type suppression alloys greatly reduces power consumption during heating and cooling time during cooling, and also stabilizes recording spraying since residual vibration does not occur when returning to bending deformation due to residual compressive stress after recording liquid injection. Can be done. This increases the operating frequency, that is, the printing speed.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is an exploded perspective view of the jetting apparatus of one embodiment of the present invention, and FIG. 4 is a perspective view showing the recording liquid flow of the embodiment of the present invention. In the jetting apparatus of the present invention, in order to increase the resolution, the nozzles 19 to which the recording liquid 20 is sprayed are arranged in a plurality of rows horizontally and vertically, and the thin film-shaped storage alloys 12 that substantially spray the recording liquid 20 are used. One to one correspond to each nozzle 19.

That is, a plurality of spaced portions 11 penetrated in the vertical direction before and after the substrate 10 are formed, and the thin film-shaped storage alloy 12 is coupled to the upper portion of the substrate 10 to cover each space 11. A plurality of these are provided. The flow path plate 13 covering the upper portion of the substrate 10 is provided, and the flow path plate 13 is formed with a liquid chamber 14 in which the recording liquid 20 is accommodated at each upper portion of the thin film-type storage alloy 12. In addition, an oil passage 15 through which the recording liquid 20 flows is provided in the center of the passage plate 13, and the oil passage 15 and the liquid chamber 14 communicate with each other through the passage 16. In addition, a liquid inlet 17 communicating with one side oil passage 15 of the flow path plate 13 is provided at one side of the substrate 10 to supply the recording liquid 20 to the oil passage 15.

In addition, a nozzle plate 18 coupled to the upper portion of the flow path plate 13 is provided, and the nozzle plate 18 is provided with a plurality of nozzles 19 corresponding to each liquid chamber 14 formed in the flow path plate 13. In addition, each nozzle 19 corresponds to the thin film-shaped storage alloy 12 exposed toward the corresponding liquid chamber 14, and when the thin film-shaped storage alloy 12 is deformed, the pressure of the liquid chamber 14 is changed, so that the recording liquid ( 20 is sprayed onto the paper via each nozzle 19 in the state of droplets.

The thin film-shaped retaining alloy 12 is continuously changed in phase with temperature change, and vibration occurs due to deformation in this process, and the recording liquid 20 is sprayed in the state of droplets through each nozzle 19. 6A to 6D are side cross-sectional views of the injector of one embodiment of the present invention, in which one thin film-type suppression alloy is extracted.

When the thin film-shaped retaining alloy 12 is heated above the set temperature in the initial state convexly deformed to the opposite side of the nozzle 19, the thin film-like alloy 12 changes to a parent phase and becomes flat, and the internal pressure of the liquid chamber 14 is increased. At the same time it is compressed, the recording liquid 20 is ejected through the nozzle 19. In addition, when the thin-film-type retaining alloy 12 falls below the set temperature, it is restored to the warpage deformation state by the residual compressive stress, and the internal pressure of the liquid chamber 14 is lowered, thereby recording liquid 20 by the capillary phenomenon and the suction force of the nozzle 19. ) Is introduced into the liquid chamber 14 and is then printed while the above process is continuously repeated.

In addition, the thin film-shaped storage alloy 12 is heated by the power supply unit 21 as shown in FIG. That is, when the power supply of the power supply unit 21 is applied to the magnetic poles 21a coupled to both ends of the thin film-type storage alloy 12, the thin film-type storage alloy 12 is heated by its own resistance, the temperature is raised, and changes to the mother phase. Flatten In addition, when the power supply to the power supply 21 is cut off, the thin-film-type storage alloy 12 is naturally cooled and restored to its original convex state by residual compressive stress. In addition, as shown in FIG. 5 (b), the heater 21b heated by the power applied from the power supply 21 is directly attached to one side of the thin film-type storage alloy 12 so that the thin film-type storage alloy 12 is attached. Can be heated.

The thin-film shape memory alloy 12 is a shape memory alloy that changes shape according to temperature and causes deformation. The material is made of titanium (Ti) and nickel (Ni), and its thickness is about 0.3 μm ~. It is about 5μm. In addition, the thin film-shaped storage alloy 12 composed of a shape memory alloy has a direction according to the manufacturing method. 8 to 9 are process diagrams and block diagrams illustrating a method of manufacturing an Oen-Way Thin film Shape memory alloy according to the present invention, and FIGS. 3 to 6 are unidirectional thin film type memory alloys. Will be used. A step 100 of depositing a thin film-type storage alloy 12 on a substrate 10 made of a material such as silicon is provided. Deposition is mainly the method of sputter-deposition and laser ablation.

And when the crystallization by heat treatment for a certain time at a constant temperature step (101) is provided in the form of a plate in the parent phase (parent phase). After the martensite end temperature (Mf) is cooled to about 40 ° C. to 70 ° C., the mother phase becomes martensite, and a residual compressive stress is present in the thin film-type storage alloy 12.

In addition, when the lower portion of the thin film-shaped storage alloy 12 is etched, a space portion 11 is formed on the substrate 10 formed of a silicon wafer, and the thin film-shaped storage alloy 12 is provided with a step 103. After that, the thin film-shaped retaining alloy 12 is deflected toward the lower portion (or upper portion) by the residual compressive stress, and the step 104 is provided as shown in FIG. Then, when the temperature is raised to the set temperature, that is, the phase termination temperature (Af) of about 50 ° C. to 90 ° C., in the thin film-shaped retaining alloy 12 that is warped in martensite, it is transformed into a shape and recorded as flat as shown in FIG. A step 105 of spraying the liquid 20 is provided. In addition, when the thin film-type storage alloy 12 is cooled to become martensite, step 106 is deflected by the residual compressive stress and the recording liquid 20 is replenished into the liquid chamber 14, and the thin film-type storage alloy 12 ) Repeats the above steps 105 and 106 in accordance with the temperature change and consists of steps 107 printed in this process.

10 to 11 are process diagrams and block diagrams illustrating a method of manufacturing a two-way thin film shape memory alloy according to the present invention.

When the thin film-shaped retaining alloy 12 is crystallized by heat treatment at a predetermined temperature for a predetermined time in the chamber 22, a step 200 is provided. Thereafter, when the thin film-shaped storage alloy 12 is cooled to about 40 ° C. to 70 ° C. of the martensite termination temperature Mf, a step 201 is provided in which the mother phase is changed to martensite. In addition, a step 202 is provided to deform by applying an external force within a range in which plastic slip does not occur in martensite. Thereafter, when the thin film-shaped storage alloy 12 is heated to about 50 ° C. to 90 ° C. as a mother phase termination temperature Af, a step 203 is provided to become a mother phase and become flat.

In addition, the steps 201, 202, and 203 may be repeated a plurality of times to train the thin film-shaped storage alloy 12 (204). In the learning step 204, the thin film-shaped storage alloy is provided. When (12) is lowered to the martensite end temperature Mf, a step 205 is provided in which deformation occurs even without an external force. In addition, a step 206 is provided in which the recording liquid 20 is sprayed while being flattened by heating the thin film-shaped storage alloy 12 to the mother phase end temperature Af. In addition, when the thin film storage alloy 12 is cooled and becomes martensite, step (207) of bending deformation by magnetic force and replenishing the recording liquid 20 into the liquid chamber 14, and the thin film storage alloy 12 Each step consists of steps 206 and 207 above, which are repeated and printed in this process. That is, the thin film-shaped storage alloy 12 ejects the recording liquid 20 while causing the reciprocating motion in both directions depending on the temperature. In addition, the bidirectional thin film-type storage alloy can be easily implemented to the required amount of displacement is determined by the amount of deflection depending on the external force applied in the manufacturing process.

The thin film type memory alloy 12 having bidirectionality can be applied to FIG. 6 according to one embodiment of the present invention. For example, the space 11 is formed on one side of the substrate 10, and then the learned thin film-type storage alloy 12 is coupled to the substrate 10. At this time, if the thin film-shaped storage alloy 12 is fixed to one side of the substrate 10 while covering the space 11, the thin film-shaped storage alloy 12 is centered on the space 11 when the temperature is changed. The recording liquid 20 can be sprayed while being deformed.

In addition, the thin film-shaped retaining alloy 12 of the present invention is flat in the mother phase according to the temperature difference and warp deformation in martensite, the smaller the temperature difference, the frequency (operating frequency) of the thin film-shaped retaining alloy 12 increases. Therefore, copper (Cu) may be added to an alloy of titanium (Ti) and nickel (Ni) to reduce the phase change temperature difference. As such, the shape memory alloy using titanium (Ti), nickel (Ni), and copper (Cu) reduces the phase change temperature difference, thereby increasing the frequency, that is, the vibration frequency, of the thin film type memory alloy 12, thereby increasing the printing speed.

The droplet feasibility of the thin film-type storage alloy of the present invention configured as described above is as follows.

The energy density (W _max ) generated by the thin film storage alloy is at most 10 × 10 ⁶ J / m ^3, and the volume (V) of the thin film storage alloy is 200 × 200 × 1 μm ^3. Suppose that 60μm can determine whether or not the thin film-type storage alloy can be sprayed as follows.

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U = U _S + U _K

U _S = πR ² γ

U = energy required to generate droplets of the desired recording liquid

U _S = surface energy of recording liquid

U _K = Kinetic energy of recording liquid

R = diameter of droplets

V = speed of recording liquid

ρ = density of recording liquid (1000 kg / m ³ )

γ = surface tension of the recording liquid (0.073 N / m)

If the desired droplet velocity is 10m / sec, the required energy (U)

U = 2.06 × 10 ^-10 + 7.07 × 10 ^-10 = 9.13 × 10 ^-10 J

The maximum energy generated by the thin film storage alloy is W _max = W _v · V

(W _v : energy J / m ³ per unit volume of the thin-film shape suppression alloy,

V: volume of the thin-film shape inhibiting alloy)

Wmax = (10 × 10 ⁶ ) · (200 × 200 × 1) = 4 × 10 ^-7 J

If the diameter of the droplet is 100 μm, the required energy U is 3.85 × 10 ^-9 J.

Therefore, W _max »U can implement droplets of a desired size. That is, since the thin film type storage alloy has a very high generating force, droplets of a desired recording liquid can be easily realized.

In addition, when the displacement amount according to the heating time and energy consumption and residual compressive stress of an embodiment of the present invention is as follows. The power is applied to the thin film-shaped storage alloy 12 to generate heat according to the resistance, and the phase change occurs by the heat, but the thin film-shaped storage alloy 12 at 25 ° C. is heated to 70 ° C. until it becomes a mother phase. The heating time and energy consumption are as follows.

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Material of Thin Film Retaining Alloy = TiNi

Length of thin-film shaped memory alloy (l) = 400μm

Density (ρ _s ) of thin film base alloys = 6450kg / m ³

Temperature change (ΔT) = 70-25 = 45 ℃

Specific heat (C _p ) = 230J / Kg ℃

Resistivity of thin film type alloy (ρ) = 80μcm

Current applied (I) = 1.0 A

Width (w) of Thin-film Retaining Alloy = 300μm

Height (t) of thin-film shaped storage alloy = 1.0 μm

Heating time (t _h )

Resistance (R) of thin film type memory alloy = ρ (l / w · t) = 1 / 1Ω

Power Consumption (IR ² ) = 1.1Watt

The energy needed to generate droplets

Heating time × power consumption = 8.1 μJ

Therefore, the energy required for ejecting the recording liquid 20 to generate droplets is about 8.1 μJ, which reduces the energy consumption of 20 μJ of the conventional heating method.

12 is a diagram showing the heating time and temperature of the thin film-type storage alloy of the present invention, and the physical properties for the experiment are as follows.

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However, the thickness of the thin film storage alloy 12 is 1 탆 and the ambient temperature is 25 ° C.

If the ambient temperature is 25 ℃, the time to heat up to 70 ℃ to change to the mother phase, and the time to cool to 30 ℃ is about 5kHz when converted to the frequency of about 200μsec. Therefore, the operating frequency of the printhead is about 5kHz. However, the temperature at which the deformation is completed (martensitic end temperature) is about 45 ° C, so there is no need to wait until it cools to 30 ° C, and it can be heated again before continuing to spray the recording liquid 20, thereby increasing the operating frequency above 5kHz. have. Larger operating frequency increases printing speed.

In addition, the displacement amount according to the residual compressive stress of the thin film-type storage alloy is analyzed with reference to FIG.

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a = 200 μm when a = b

Material of Thin Film Retaining Alloy = TiNi

Young's modulus (E _m ) of thin film base alloys = 30 GPa

Residual compressive stress (S) = 30 MPa acting on the thin film storage alloy

Poisson's ratio (ν) = 0.3

The length of the thin film-shaped suppression alloy exposed to the space 11 is a

Thickness of Thin Film Retaining Alloy = h _m

Width of the thin-film-shaped storage alloy exposed to the space 11 = b

Critical stress of thin film storage alloy (S _cr )

S _cr = 3.6 MPa

Center displacement of thin film storage alloy (δ _m ):

δ _s = 6.2 μm

Total energy (U _m ) generated when the thin film-forming alloy is buckled

= 2.8 × 10 ^-10 J

The total energy generated when the thin film storage alloy is restored (buckled) after recording liquid injection is changed into the restoring force P that causes the bending deformation of the thin film storage alloy. Resilience is as follows.

U = P ・ △ V

Volume change (△ V) = (δ _s a ² ) /4=6.2×10 ^-14 m ³

Restoration force (P) = 4.5KPa

Assuming that half of the total volume change caused by the warpage deformation of the thin-film-shaped suppression alloy is injected, 39 μm droplets are formed.

Displacement amount for the thickness and size of the thin film-shaped storage alloy is shown in the table below, and the unit is μm.

14 is a cross-sectional view of an injector according to another embodiment of the present invention, in which the same components as in FIG. 3 will be described with the same reference numerals. According to another embodiment of the present invention, the flow path plate 13 and the nozzle plate 18 are provided below the substrate 10, and an extraction state of any one of the thin film-type suppression alloys is extracted. The space part 11 penetrated in the up-and-down direction is formed in the substrate 10, and the thin film-shaped storage alloy 12 is coupled to an upper portion of the substrate 10 to cover the space part 11. In addition, a flow path plate 13 covering the lower portion of the substrate 10 is provided, and the flow path plate 13 is formed with a liquid chamber 14 corresponding to the space 11 so as to accommodate the recording liquid 20.

In addition, a nozzle plate 18 coupled to the lower portion of the flow path plate 13 is provided, and the nozzle plate 18 is formed with a nozzle 19 corresponding to the liquid chamber 14 formed in the flow path plate 13. In addition, the nozzle 19 corresponds to the thin film storage alloy 12 exposed toward the liquid chamber 14, and the recording liquid 20 is liquid when the pressure of the liquid chamber 14 changes when the thin film storage alloy 12 is deformed. It is sprayed on the paper via the nozzle 19 in an enemy state.

The other embodiment of the present invention configured as described above has the same structure of the thin film-type storage alloy as the embodiment of the present invention. In this case, the thin-film-shaped storage alloy 12 has one-way and two-way depending on the manufacturing process, and is deformed by a phase change according to temperature change. In this process, the liquid chamber 14 and the space part ( The recording liquid 20 stored in 11 is sprayed onto the paper in the form of droplets via the nozzle 19. In another embodiment of the present invention, the recording liquid 20 is accommodated in the space portion 11 formed in the substrate 10 so that the liquid chamber 15 and the flow path 16 can be easily made in the substrate 10.

As described above, according to the present invention, a phase change occurs as the temperature of the thin film type retaining alloy for spraying the recording liquid changes, and the recording liquid is ejected by deformation in this process. In addition, since the thin film type retaining alloy has a large displacement amount, each liquid portion formed in the substrate and each liquid chamber formed in the flow path plate can be made small, so that the overall size of the print head can be reduced and can be made small. . In addition, since the generating force is large, the pushing force of the recording liquid is increased to reduce the clogging of the nozzle, thereby improving reliability, and the droplet size of the recording liquid can be sufficiently reduced, which is advantageous for achieving high image quality. In addition, since the driving voltage is 10 volts or less, it is easy to design and fabricate a component circuit, and a substrate composed of silicon, glass, a metal plate, a polymer, and the like as a diaphragm which serves as a diaphragm using a conventional semiconductor process and an etching process. Since it can be easily implemented in the phase, there is an effect such as improved mass productivity and simplified structure.

Claims (18)

Thin-film-shaped storage alloy 12 that changes in shape as the temperature changes, A power supply unit 21 for generating a temperature change of the thin film-type storage alloy 12; A liquid chamber 14 is formed on one side of the thin film-shaped storage alloy 12 to store the recording liquid 20, and the recording liquid 20 flows into one side of a wall surface surrounding the liquid chamber 14. A flow path plate 13 on which the flow path 16 is formed, The liquid chamber 14 of the flow path plate 13 is disposed on the flow path plate 13 so that the recording liquid 20 can be sprayed in the form of droplets when the thin film-shaped storage alloy 12 is changed in shape. A recording liquid jetting apparatus for a printhead, comprising a nozzle plate (18) on which a nozzle (19) of a smaller area is formed. The method of claim 1, The thin film type memory alloy (12) is a recording liquid jetting apparatus of a printhead, characterized in that the shape memory alloy mainly composed of titanium (Ti) and nickel (Ni). The method of claim 2, The thin film-shaped storage alloy (12) is a recording liquid injection device of the printhead, characterized in that the shape memory alloy further added copper (Cu) in order to increase the operating frequency by reducing the phase change temperature difference. The method of claim 1, The thin film-shaped storage alloy 12 has a thickness of 0.3 μm to 5 μm. The method of claim 1, The power supply unit 21 has a printhead recording comprising: electrodes 21a coupled to both ends of the thin film-type storage alloy 12 such that the thin film-type storage alloy 12 generates heat by its own resistance. Liquid injectors. The method of claim 1, And the power supply unit (21) has a heater (21b) attached to one side of the thin film-shaped storage alloy (12) and heated by a power applied thereto. The method of claim 1, Spraying the recording liquid of the printhead, which is provided under the thin film-type storage alloy 12 and has a substrate 10 having a space portion 11 so that the thin-film-type storage alloy 12 can change shape. Device. The method of claim 7, wherein The substrate 10 is a recording liquid jetting apparatus of the printhead, characterized in that the material of silicon. The method of claim 7, wherein The area where the thin film-shaped storage alloy 12 is exposed to the space portion 11 and is substantially changed in shape has a width b of 100 μm to 500 μm and a length a of 100 μm to 300 μm. Head of recording liquid injector. The method of claim 1, When the thin film-shaped retaining alloy 12 is heated above the mother phase end temperature and changed into the mother phase, the recording liquid 20 is formed into a flat plate, and the recording liquid 20 is sprayed through the nozzle 19 and cooled below the martensite end temperature. And the recording liquid (20) is replenished by the liquid chamber (14) when it is changed to the site and is deflected by the residual compressive stress. The method of claim 10, And the mother phase end temperature is about 50 ° C to 90 ° C, and the martensite end temperature is about 40 ° C to 70 ° C. The method of claim 10, And a time from about 200 μsec or less and an operating frequency of about 5 kHz or more to the martensite after heating to the mother phase. The method of claim 1, When the thin film-shaped retaining alloy 12 is heated above the mother phase end temperature and changed into the mother phase, the recording liquid 20 is formed into a flat plate, and the recording liquid 20 is sprayed through the nozzle 19 and cooled to below the martensite end temperature. The recording liquid jetting apparatus of the printhead, characterized in that when the site is changed, it is warped by learning and the recording liquid (20) is replenished with the liquid chamber (14). The method of claim 13, When the thin film-shaped storage alloy 12 is martensite, the external force is applied several times to learn, and when cooled below the end temperature of martensite, martensite is formed in a specific direction so as to have a desired displacement. Injector. The method of claim 13, And the mother phase end temperature is about 50 ° C to 90 ° C, and the martensite end temperature is about 40 ° C to 70 ° C. The method of claim 13, And the time from the heating to the martensite after heating to the mother phase is about 200 μsec or less and the operating frequency is 5 kHz or more. Depositing the thin film-type storage alloy 12 on the substrate 10; (101) storing a flat state in the mother phase when the thin film-shaped retaining alloy 12 is heat-treated and crystallized; Cooling the thin film-type storage alloy 12 to be martensite, the residual compressive stress is step 102, Etching 103 the substrate 10 to expose a portion of the thin-film-shaped storage alloy 12; (104) the exposed portion of the thin film-shaped storage alloy 12 is deflected by residual compressive stress; When the thin film-shaped retaining alloy 12 is heated to form a matrix, the recording liquid 20 is sprayed while being flattened (105); When the thin film-shaped retaining alloy 12 is cooled and becomes martensite, bending deformation is performed by residual compressive stress and the recording liquid 20 is replenished into the liquid chamber 14, And (107) printing the steps (107) and (108) repeatedly as the temperature changes of the thin film-type storage alloy (12). Depositing the thin-film-type storage alloy 12 and then heat-treating it to crystallize (200); Cooling the thin film-shaped storage alloy 12 to be martensite (201), (202) bending deformation by applying an external force to the thin film-shaped retaining alloy (12); A step (203) of heating the thin film-shaped retardation alloy (12) to be flat in the mother phase; Repeating the cooling, deforming and heating steps 201, 202 and 203 several times to learn the thin film type memory alloy 12 (204); When the thin film-shaped storage alloy 12 that has passed through the learning step 204 is cooled to become martensite, bending deformation by magnetic force (205); When the thin film-shaped storage alloy 12 is heated to form a matrix, the recording liquid 20 is sprayed while being flattened (206); When the thin film-shaped retaining alloy 12 is cooled and becomes martensite, the recording liquid 20 is replenished into the liquid chamber 14 by bending deformation (207); And (208) printing the steps (206) and (207) repeatedly as the temperature changes of the thin film-type storage alloy (12).