KR100221459B1 - Recording liquid ejecting apparatus and method thereof of print head - Google Patents

Abstract

The present invention relates to a recording liquid ejecting apparatus for a printhead and a method thereof.

According to the present invention, the recording liquid is injected while the pressure of the liquid chamber is changed by the deformation generated during the phase change process of the thin film type storage alloy, so that the clogging phenomenon of the nozzle is reduced due to the large actuating force of the thin film type storage alloy. In addition, since the deformation amount of the thin film storage alloy is large, the thin film storage alloy can be manufactured in a small size, the density of the nose can be increased, the resolution can be increased, and the thin film storage alloy can be formed on the substrate using a semiconductor process. The printing liquid jetting apparatus of the increased printhead, in particular, a thin film-type storage alloy that changes shape according to temperature changes, a power supply for generating a temperature change of the thin film-type storage alloy, and the thin film-type storage alloy A liquid chamber is installed on one side and a liquid chamber for storing the recording liquid is formed, and a wall surface surrounding the liquid chamber is formed. A flow path plate having a flow path formed therein so that the recording liquid flows into the flow path, and a liquid plate area of the flow path plate provided on the flow path plate so that the recording liquid can be sprayed in the form of droplets when the thin film-type It is characterized by having a nozzle plate having a small area nozzle.

Description

Record liquid jetting apparatus of printhead and its method

1 is a cross-sectional view of a conventional heated injector.

2 is a cross-sectional view of a conventional piezoelectric element injector.

Figure 3 is an exploded perspective view of the injector of one embodiment of the present invention.

4 is a perspective view showing the recording liquid flow in one embodiment of the present invention.

5a, b is a front sectional view of the injector of the embodiment of the present invention.

6 is a side cross-sectional view of the injector of one embodiment of the present invention, wherein (a) to (b) show before and after operation.

7 is a diagram showing the phase change of the thin film-type storage alloy of the present invention.

8 is a process chart showing a method of manufacturing a one-way thin film storage alloy according to the present invention.

Figure 9 is a block diagram showing a method of manufacturing a one-way thin film type memory alloy according to the present invention.

10 is a process chart showing a method of manufacturing a bidirectional thin film type memory alloy according to the present invention.

11 is a block diagram showing a method of manufacturing a bidirectional thin film type memory alloy according to the present invention.

12 is a diagram showing the heating time and temperature of the thin film-type storage alloy of the present invention.

Figure 13 is a cross-sectional view showing the size of the thin film-type storage alloy of the present invention.

14 is a side cross-sectional view of an injector according to another embodiment of the present invention, in which (a) to (b) show before and after operation.

* Explanation of symbols for main parts of the drawings

10 substrate 11 space part

12: thin film-shaped storage alloy 13: flow plate

14: liquid chamber 16: euro

18: nozzle plate 19: nozzle

20: recording liquid 21: electrode

100: intermediate step 101: heat treatment step

102 cooling step 103 exposure step

104: bending deformation step 105: recording liquid injection step

106: recording solution replenishment step 107: printing step

200: heat treatment step 201: cooling step

202: bending deformation step 203: heating step

204 learning step 205 bending step

206: recording liquid injection step 207: recording liquid replenishment step

208: printing step

The present invention relates to a recording liquid jetting apparatus and a method of a printhead, and more particularly, to reduce the pressure of the liquid chamber by deformation in the process of phase change of the thin-film-type retaining alloy so that the recording liquid is injected, thereby making it compact. The present invention relates to a recording liquid ejecting apparatus for a printhead and a method thereof, which can simplify the manufacturing process.

In general, the widely used printhead uses DoD On Demand (DOD). This DOD system is increasingly used because it does not need to charge or deflect recording liquid drops, does not require high pressure, and can easily print by spraying the recording liquid droplets under atmospheric pressure. Typical spraying principles include a heating spray method using a resistance and a vibration spray method using a piezo-electric.

FIG. 1 is for explaining the principle of the heating jetting method, which has a chamber a1 in which recording liquid is built, and has an injection hole a2 directed from the chamber a1 toward the recording material. At the bottom of the chamber a1, on the opposite side, a resistor a3 is embedded to cause the air to expand. Therefore, the bubble expanded by resistance causes the recording liquid in the chamber a1 to be pushed out to the injection port a2, and the recording liquid is ejected toward the recording material by the force.

However, this heating spray method causes a chemical change since the recording liquid is heated to heat, and the recording liquid adheres to the inner diameter of the injection hole (a2), causing clogging, and also has a short lifespan of the heat generating resistor. Documents need to be used, which results in poor document retention.

Figure 2 is for explaining the principle of the vibrating injection method by the piezoelectric element there is also a chamber (b1) in which the recording liquid is built, there is an injection port (b2) from the chamber (b1) toward the recording material, the injection hole A piezoelectric element (piezo transducer) is buried on the opposite side of the floor to induce vibration.

As described above, when the piezoelectric element b3 causes vibration at the bottom of the chamber b1, the recording liquid is pushed to the injection hole b2 by the vibration force, and thus the recording liquid is transferred to the recording material by the vibration force. To be sprayed.

As the spraying method by vibrating the piezoelectric element does not use heat, there is a wide range of choice of the recording liquid, but it is difficult to process the piezoelectric element, and in particular, the operation of attaching the piezoelectric element to the bottom of the chamber b1 is difficult. Since it is difficult, there exists a problem that mass productivity falls.

In addition, a conventional shape memory alloy is used to discharge the recording liquid. Japanese Unexamined Patent Publication Nos. 57-203177, 63-57251, Pyeong 4-247680, Pyeong 2-265752, Pyeong 2-308466, and Pyeong 3-65349 disclose examples of printheads in which shape memory alloys are used. . Conventional embodiments include a plurality of shape memory alloys having different phase transformation temperatures and different thicknesses are configured to be warped and deformed, and are configured to be warped by a combination of elastic member shape memory alloys.

However, the conventional printhead using the shape memory alloy is difficult to miniaturize the size of the head, the density of the nozzle is low, the resolution is not good, and it is difficult to manufacture, the aspect is poor. In addition, the shape memory alloy used is not a thin film but a thick film having a thickness of 50 μm or more, which causes disadvantages such as high power consumption during heating and long cooling time, low operating frequency, and low printing speed.

The present invention was developed to solve various problems as described above, and an object of the present invention is to allow the recording liquid to be injected while the pressure of the liquid chamber is changed by the deformation generated during the phase change process of the thin film type memory alloy. As the actuation force of the shape memory alloy is very high, the clogging phenomenon of the nozzle is reduced and the deformation amount of the thin film is large. Therefore, the thin film-type memory alloy can be manufactured in small size to increase the density of the nozzle to increase the resolution and the semiconductor thin film. The present invention provides a recording liquid jetting apparatus for a printhead and a method for increasing mass productivity since a shape memory alloy is deposited on a substrate using a manufacturing process and a required displacement can be obtained.

In order to achieve the above object, the recording liquid jetting apparatus of the printhead according to the present invention includes a thin film type retaining alloy which changes shape according to temperature change, a power supply unit for generating a temperature change of the thin film type retaining alloy, and the thin film shape. A liquid chamber installed on one side of the storage alloy and configured to store the recording liquid, and a flow path plate formed on one side of the wall surface surrounding the liquid chamber so that the recording liquid flows; It is characterized in that the nozzle plate is provided with a nozzle plate having a smaller area than the liquid chamber area of the flow path plate so that the recording liquid can be ejected in the form of droplets when the alloy is changed in shape.

The present invention uses a semiconductor thin film manufacturing process using a semiconductor thin film manufacturing process to solve the disadvantages of the conventional piezoelectric method and the method of using the air expansion by heating and the method using a conventional shape memory alloy And a portion of the substrate to be etched to form a space in which the thin film-type suppression alloy can vibrate, and to form a droplet by vibrating the thin film-type suppression alloy.

The shape memory alloy is deposited on a substrate using a semiconductor thin film manufacturing process and then heat-treated to form a thin film-type memory alloy. Therefore, a flat shape is achieved in the mother phase. The deposited thin film storage alloy may have residual compressive stress in martensite, and may change the magnitude of residual compressive stress according to deposition conditions, heat treatment temperature, and time. When a portion of the substrate is etched to form a space portion, the thin film-shaped suppression alloy is warped by bending due to residual compressive stress. When the thin film storage alloy is heated, the thin film storage alloy becomes a matrix and tries to change to a flat state. At this time, the liquid volume decreases and the recording liquid is ejected. During cooling, bending deformation occurs due to residual compressive stress, and recording liquid is refilled at this time. This process is repeated to perform continuous recording liquid injection.

The present invention has a simple structure and can easily realize the displacement required for spraying the recording liquid using the residual compressive stress by implementing the thin film mold suppression alloy through the semiconductor thin film manufacturing process and the substrate etching, and also increase the current. The amount of deformation can be easily adjusted by changing the magnitude of the compressive stress, and thus the amount of displacement can be increased, thereby reducing the area of the thin film-type storage alloy. Therefore, the head can be miniaturized and the density of the nozzle can be increased to achieve high resolution.

Stabilized recording solution because thin film type suppression alloy reduces power consumption during heating, cooling time is very fast during cooling, and residual vibration does not occur when returning to bending deformation by residual compressive stress after recording liquid injection. Injection can be performed. This increases the operating frequency, that is, the printing speed.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is an exploded perspective view of the jetting apparatus of one embodiment of the present invention, and FIG. 4 is a perspective view showing the recording liquid flow of the embodiment of the present invention. In the jetting apparatus of the present invention, a plurality of nozzles 19 to which the recording liquid 20 is sprayed is vertically and horizontally arranged in order to increase the resolution, and the thin film-shaped storage alloy 12 which substantially sprays the recording liquid 20 is used. One to one correspond to each nozzle 19.

That is, a plurality of space portions 11 penetrating in the vertical direction in front and rear of the substrate 10 are formed, and are coupled to the upper portion of the substrate 10 to cover each of the space portions 11. A plurality of these are provided. The flow path plate 13 covering the upper portion of the substrate 10 is provided, and the flow path plate 13 is provided with a liquid chamber 14 in which the recording liquid 20 is accommodated in each of the upper portions of the thin film-type storage alloy 12. In addition, an oil passage 15 through which the recording liquid 20 flows is provided in the center of the passage plate 13, and the oil passage 15 and the liquid chamber 14 communicate with each other through the passage 16. In addition, a liquid inlet 17 communicating with one side oil passage 15 of the flow path plate 13 is provided at one side of the substrate 10 to supply the recording liquid 20 toward the oil passage 15.

In addition, a nozzle plate 18 coupled to the upper portion of the flow path plate 13 is provided, and the nozzle plate 18 is provided with a plurality of nozzles 19 corresponding to each liquid chamber 14 formed in the flow path plate 13. In addition, each nozzle 19 corresponds to the thin film storage alloy 12 exposed toward the corresponding liquid chamber 14, and when the thin film storage alloy 12 is deformed, the pressure of the liquid chamber 14 changes so that the recording liquid 20 ) Is sprayed onto the paper via each nozzle 19 in the form of droplets.

The thin film-shaped retaining alloy 12 is continuously changed in phase with temperature change, and vibration occurs due to deformation in this process, and the recording liquid 20 is sprayed in the state of droplets through each nozzle 19. 6 (a) to 6 (b) are side cross-sectional views of the injector of one embodiment of the present invention. When the thin film-shaped retaining alloy 12 is heated above the set temperature in the initial state convexly deformed to the opposite side of the nozzle 19, the thin film-like alloy 12 changes to a parent phase and becomes flat, and the internal pressure of the liquid chamber 14 is increased. At the same time it is compressed, the recording liquid 20 is ejected through the nozzle 19. In addition, when the thin film-shaped retaining alloy 12 is lower than the set temperature, it is restored to the bending deformation state by the residual compressive stress, and the internal pressure of the liquid chamber 14 is lowered, and the recording liquid 20 is caused by the capillary phenomenon and the suction force of the nozzle 19. ) Is introduced into the liquid chamber 14 and is then printed while the above process is continuously repeated.

In addition, the thin film-type storage alloy 12 is heated by the power supply unit 21 as shown in FIG. That is, when the power supply of the power supply unit 21 is applied to the electrodes 21a coupled to both ends of the thin film-type storage alloy 12, the thin film-type storage alloy 12 is heated by its own resistance to raise the temperature and change to the mother phase. Flatten In addition, when the power supply to the power supply 21 is cut off, the thin-film-type storage alloy 12 is naturally cooled and restored to its original convex state by residual compressive stress. In addition, as shown in (b) of FIG. 5 (b), the heater 21b heated by the power applied from the power supply 21 is directly attached to one side of the thin film-type storage alloy 12 to attach the thin film-type storage alloy 12. Can be heated.

The thin-film shape memory alloy 12 is a shape memory alloy (phase memory alloy) is used to change the phase according to the temperature and the material is made of titanium (Ti) and nickel (Ni) and the thickness is about 0.3㎛ ~ It is about 5 micrometers. In addition, the thin film-shaped storage alloy 12 composed of a shape memory alloy has a direction according to the manufacturing method. 8 to 9 are process diagrams and block diagrams illustrating a method of manufacturing a one-way thin file shape memory alloy according to the present invention. FIGS. 3 to 6 are views illustrating a method of manufacturing a one-way thin file shape memory alloy. will be. A step 100 of depositing a thin film-type storage alloy 12 on a substrate 10 made of a material such as silicon is provided. Deposition is mainly the method of sputter-deposition and laser ablation.

And when the crystallization by heat treatment for a certain time at a constant temperature step (101) is provided in the form of a plate in the parent phase (parent phase). After the martensite end temperature Mf is cooled to about 40 ° C. to 70 ° C., the mother phase becomes martensite, and a residual compressive stress is present in the thin film type retaining alloy 12.

In addition, when the lower portion of the thin-film-type storage alloy 12 is etched, a space portion 11 is formed on the substrate 10 formed of a silicon wafer, and the thin-film-type storage alloy 12 is provided with a step 103. Thereafter, the thin film-shaped retaining alloy 12 is deflected toward the lower portion (or upper portion) by the residual compressive stress, and a step 104 is provided as shown in FIG. Then, when the set temperature, that is, the phase termination temperature (Af), is raised to about 50 ° C. to 90 ° C. in the thin film-shaped retaining alloy 12 which is warped in martensite, the recording liquid is flattened as shown in FIG. 6 (c). A step 105 is provided in which 20 is injected. In addition, when the thin film-type storage alloy 12 is cooled to become martensite, step 106 is deflected by the residual compressive stress and the recording liquid 20 is replenished into the liquid chamber 14, and the thin film-type storage alloy 12 ) Repeats the above steps 105 and 106 in accordance with the temperature change and consists of steps 107 printed in this process.

10 to 11 are process diagrams and block diagrams illustrating a method of manufacturing a two-way thin file shape memory alloy according to the present invention. When the thin film-shaped retaining alloy 12 is crystallized by heat treatment at a predetermined temperature for a predetermined time in the chamber 22, a step 200 is provided. Thereafter, when the thin film-shaped storage alloy 12 is cooled to about 40 ° C. to 70 ° C. of the martensite end temperature Mf, a step 201 is provided in which the mother phase is changed to martensite. In addition, the step 2020 is provided to deform by applying an external force within the range that the plastic slip does not occur in the martensite. Thereafter, when the thin film-shaped retaining alloy 12 is heated to about 50 ° C. to 90 ° C. as a mother phase termination temperature Af, a step 203 is provided in which the thin film-shaped retaining alloy 12 becomes a mother phase and becomes flat.

In addition, the steps 201, 202 and 203 are repeated a plurality of times to train the thin film-shaped storage alloy 12 (204), and in the learning step 204, the thin film-shaped storage alloy ( When 12) is lowered to the martensite end temperature Mf, a step 205 is provided in which deformation occurs even without an external force. In addition, a step 206 is provided in which the recording liquid 20 is sprayed while being flattened when the thin film-shaped storage alloy 12 is heated to the mother phase end temperature Af. In addition, when the thin film storage alloy 12 is cooled and becomes martensite, the bending deformation is caused by magnetic force and the recording liquid 20 is replenished into the liquid chamber 14 and the thin film storage alloy 12 is changed in temperature. Each step 206, 207 above is repeated and consists of step 208, which is printed in this process. That is, the thin film-shaped storage alloy 12 ejects the recording liquid 20 while causing the reciprocating motion in both directions depending on the temperature. In addition, the bidirectional thin film-type storage alloy can be easily implemented to the required amount of displacement is determined by the amount of deflection depending on the external force applied in the manufacturing process.

The thin film type memory alloy 12 having bidirectionality may be applied to FIG. 6, which is an embodiment of the present invention. For example, the space 11 is formed on one side of the substrate 10, and then the learned thin film-type storage alloy 12 is coupled to the substrate 10. At this time, when the thin film-shaped storage alloy 12 is fixed to one side of the substrate 10 while covering the space 11, the thin film-shaped storage alloy 12 deforms about the space 11 when the temperature is changed. While the recording liquid 20 can be sprayed.

In addition, according to the present invention, the thin film-shaped retaining alloy 12 is flat in the mother phase according to the temperature difference and is warped in martensite, so as the temperature difference is reduced, the frequency (operating frequency) of the thin film-shaped retaining alloy 12 is increased. Therefore, copper (Cu) may be added to an alloy of titanium (Ti) and nickel (Ni) to reduce the phase change temperature difference. As such, the shape memory alloy using copper (Cu) in an alloy of titanium (Ti) and nickel (Ni) increases the frequency, that is, the operating frequency of the thin film-shaped storage alloy 12, thereby increasing the printing speed by reducing the phase change temperature difference. .

The droplet feasibility of the thin film-type storage alloy of the present invention configured as described above is as follows.

The energy density (W _max ) generated by the thin film storage alloy 12 is at most 10 × 10 6 J / m 3, and the volume V of the thin film storage alloy 12 is 200 × 200 × 1 μm 3. When the diameter of the enemy is 60 μm, whether or not the thin film-shaped storage alloy 12 can be sprayed is determined as follows.

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U = energy required to generate droplets of the desired recording liquid

Us = surface energy of recording liquid

Uk = kinetic energy of recording liquid

R = diameter of the droplet

v = speed of recording liquid

ρ = density of recording liquid (1000 ㎏ / ㎥)

γ = surface tension of recording solution (0.073 N / m)

If the desired droplet velocity is 10m / sec, the required energy (U)

The maximum energy generated by the thin film storage alloy is

(W _ν : Energy that can be exerted per unit volume of thin film type memory alloy)

V is the volume of the thin film-type storage alloy)

If the diameter of the droplet is 10㎛, the required energy U = 3.85 × 10 ^-9 j.

이므로 원하는 크기의 액적을 구현할 수 있다. 즉 박막형상기억합금은 발생력이 매우 크기 때문에 원하는 기록액의 액적을 쉽게 구현할 수 있다.therefore,

Therefore, droplets of a desired size can be realized. That is, since the thin film type storage alloy has a very high generating force, droplets of a desired recording liquid can be easily realized.

In addition, when the displacement amount according to the heating time and energy consumption and residual compressive stress of the embodiment of the present invention is as follows. Apply power to the thin-film-shaped storage alloy 12 to generate heat according to the resistance and to cause phase change by the heat, but heat the thin-film-shaped storage alloy 12 at 25 ° C. until it becomes 70 ° C. The heating time and energy consumption are as follows.

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Material of Thin Film Retaining Alloy = TiNi

Length (l) of thin-film shaped memory alloy = 400㎛

Density (ρs) of thin film storage alloy = 6450㎏ / ㎥

Temperature change (ΔT) = 70-25 = 45 ℃

Specific heat (C _p ) = 230 J / kg ℃

Resistivity of thin film type memory alloy (ρ) = 80μcm

Current applied (I) = 1.0 A

Width (w) of Thin Film Retaining Alloy = 300㎛

Height (t) of Thin Film Retaining Alloy = 1.0㎛

Heating time (t _h )

= 7.4 μsec

= 7.4 μsec

Resistance (R) = ρ (1w · t) = 1.1Ω of thin film storage alloy

Power Consumption (I ² R) = 1.1 Watt

The energy needed to generate droplets

Heating time × Power consumption = 8.1 μJ

Therefore, the energy required for ejecting the recording liquid 20 to generate droplets is about 8.1 μJ, which reduces the energy consumption of 20 μJ of the conventional heating method.

12 is a diagram showing the heating time and temperature of the thin film-type memory alloy of the present invention.

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However, the thickness of the thin film storage alloy 12 is 1 μm and the ambient temperature is 25 ° C.

When the ambient temperature is 25 ℃, the time to heat up to 70 ℃ to change to the mother phase, and the time to cool to 30 ℃ is about 5㎑ when converted to the frequency of about 200μsec. However, since the end of deformation (martensite end temperature) is about 45 ° C, there is no need to wait until it cools down to 30 ° C, and it can be heated again before continuing to spray the recording liquid 20. It can increase. Larger operating frequencies increase printing speed.

In addition, the displacement amount according to the residual compressive stress of the thin film-type storage alloy is analyzed as follows with reference to FIG.

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a = 200μm when a = b

Material of Thin Film Retaining Alloy = TiNi

Young's modules () = 30 GPa

Residual compressive stress () = 30 MPa acting on the thin film storage alloy

Poisson's ratio (ν) = 0.3

The length of the thin film-shaped suppression alloy exposed to the space 11 is a

Thickness of Thin Film Retaining Alloy = hm

Width of the thin-film-shaped storage alloy exposed to the space 11 = b

Critical stress of thin film type alloy

Center Displacement of Thin Film Retaining Alloy (δ _m )

Total energy (U _m ) generated when buckling of thin film storage alloy

The total energy generated when the thin film-shaped suppression alloy is restored (buckled) after the injection of the recording liquid is converted into a restoring force (P) that causes the bending deformation of the thin film-shaped suppression alloy. Resilience is as follows.

Assuming that 1/2 of the total volume change caused by the warpage deformation of the thin-film-shaped retaining alloy is injected, a droplet of 39 mu m is formed.

The amount of displacement with respect to the thickness and size of the thin film storage alloy is shown in the table below and the unit is μm.

14 is a cross-sectional view of an injector of another embodiment of the present invention, in which the same components as in FIG. 3 will be described with the same reference numerals. According to another embodiment of the present invention, the flow path plate 13 and the nozzle plate 18 are provided below the substrate 10, and an extraction state of any one of the thin film-type inhibitors is extracted. The space part 11 penetrated in the up-and-down direction is formed in the substrate 10, and the thin film-type storage alloy 12 is coupled to an upper portion of the substrate 10 to cover the space part 11. In addition, a flow path plate 13 covering the lower portion of the substrate 10 is provided, and the flow path plate 13 is formed with a liquid chamber 14 corresponding to the space 11 so as to accommodate the recording liquid 20.

In addition, a nozzle plate 18 coupled to the lower portion of the flow path plate 13 is provided, and the nozzle plate 18 is formed with a nozzle 19 corresponding to the liquid chamber 14 formed in the flow path plate 13. In addition, the nozzle 19 corresponds to the thin film-shaped storage alloy 12 exposed toward the liquid chamber 14, and the recording liquid 20 becomes liquid when the pressure of the liquid chamber 14 changes when the thin-film storage alloy 12 is deformed. It is sprayed on the paper via the nozzle 19 in an enemy state.

Another embodiment of the present invention configured as described above has the same structure of the thin film-type storage alloy as one embodiment of the present invention. In this case, the thin-film-shaped storage alloy 12 has one-way and two-way depending on the manufacturing process, and is deformed by a phase change according to temperature change. In this process, the liquid chamber 14 and the space part ( The recording liquid 20 stored in 11 is sprayed onto the paper in the form of droplets via the nozzle 19. In another embodiment of the present invention, the recording liquid 20 is accommodated in the space portion 11 formed in the substrate 10 so that the liquid chamber 15 and the flow path 16 can be easily made in the substrate 10.

As described above, according to the present invention, the thin film-shaped retaining alloy injecting the recording liquid causes a phase change as the temperature is changed, and the recording liquid is ejected by deformation in this process. In addition, since the thin film type retaining alloy has a large displacement amount, each space portion formed on the substrate and each liquid chamber formed on the flow path plate can be made small, so that the overall size of the print head can be reduced and can be made small. . In addition, since the generating force is large, the pushing force of the recording liquid is increased to reduce the clogging of the nozzle, thereby improving reliability, and the droplet size of the recording liquid can be sufficiently reduced, which is advantageous for achieving high image quality. In addition, since the driving voltage is 10 volts or less, it is easy to design and manufacture the driving circuit, and a thin film type memory alloy, which functions as a diaphragm using a conventional semiconductor process and an etching process, is composed of silicon, glass, metal plate, and polymer. Since it can be easily implemented in the phase, there is an effect such as mass production is improved and the structure is simplified.

Claims (18)

It is installed on one side of the thin film-type storage alloy 12, the power supply 21 for generating a temperature change of the thin-film-type storage alloy 12, and the thin film-type storage alloy 12 which changes in shape according to temperature change. And a fluid chamber 14 for storing the recording liquid 20 and a flow path plate 13 having a flow path formed therein so that the recording liquid 20 flows into one side of the wall surrounding the liquid chamber 14 and the flow path. Nozzle 19 having an area smaller than that of the liquid chamber 14 of the flow path plate 13 so that the recording liquid 20 can be ejected in the form of droplets when the thin film-shaped storage alloy 12 is changed in shape. A recording liquid jetting apparatus for a print head, comprising: a nozzle plate (18) formed with a; The apparatus of claim 1, wherein the thin film-shaped storage alloy (12) is a shape memory alloy composed mainly of titanium (Ti) and nickel (Ni). The apparatus of claim 2, wherein the thin film-shaped storage alloy (12) is a shape memory alloy to which copper (Cu) is further added to reduce the phase change temperature difference to increase the operating frequency. The recording liquid jetting apparatus according to claim 1, wherein the thin film-shaped storage alloy (12) has a thickness of about 0.3 µm to 5 µm. The method of claim 1, wherein the power supply unit 21 is characterized in that it comprises an electrode (21a) coupled to both ends of the thin-film-type storage alloy 12 so as to generate heat by the self-regulation of the thin-film-type storage alloy 12 The recording liquid injection device of the printhead. The recording liquid of claim 1, wherein the power supply unit 21 includes a heater 21b attached to one side of the thin film-type storage alloy 12 and heated by a power applied thereto. Injector. According to claim 1, characterized in that provided with a substrate 10 provided below the thin-film-type storage alloy 12 and having a space portion 11 so that the thin-film-type storage alloy 12 can change the shape The recording liquid injection device of the printhead. 8. The recording liquid jetting apparatus according to claim 7, wherein the substrate (10) is made of silicon. The area (b) having a width (b) of 100 µm to 50 µm and a length (a) of 100 according to claim 7, wherein the thin film-shaped storage alloy 12 is exposed to the space portion 11 and is substantially changed in shape. A recording liquid jetting apparatus for a printhead, wherein the recording liquid has a thickness of 300 µm to 300 µm. The thin film-shaped storage alloy (12) according to claim 1, wherein the thin film-shaped retaining alloy (12) is heated to a base end temperature and changed to a base shape so that the recording liquid (20) is sprayed through the nozzle (19) and ends martensite. And cooling to below the temperature to change the martensite to warp by the residual compressive stress so that the recording liquid (20) is replenished with the liquid chamber (14). 11. The recording liquid jetting apparatus according to claim 10, wherein the mother phase end temperature is about 50 ° C to 90 ° C and the martensite end temperature is about 40 ° C to 70 ° C. 11. The recording liquid jetting apparatus according to claim 10, wherein the time from heating to the mother phase to cooling to martensite is about 200 mu sec or less and 5 sec or more in operation. The thin film-shaped storage alloy (12) according to claim 1, wherein the thin film-shaped retaining alloy (12) is heated to a base end temperature and changed to a base shape so that the recording liquid (20) is sprayed through the nozzle (19) and ends martensite. And cooling to below the temperature and changing to martensite to warp and deform by learning so that the recording liquid (20) is replenished with the liquid chamber (14). 15. The method of claim 13, wherein when the thin-film-shaped retaining alloy 12 is martensite, the external force is applied several times to learn, and when cooled below the end temperature of martensite, martensite is formed in a specific direction to have a desired displacement. The recording liquid jetting device of the printhead. The recording liquid jetting apparatus according to claim 13, wherein the mother phase end temperature is about 50 ° C to 90 ° C and the martensite end temperature is about 40 ° C to 70 ° C. 15. The recording liquid jetting apparatus according to claim 13, wherein the time from heating to the mother phase to cooling to martensite is about 200 µsec or less and an operating frequency is 5 Hz or more. Depositing the thin film-type storage alloy 12 on the substrate 10, and storing the flat state in the mother phase when the thin film-type storage alloy 12 is thermally crystallized (101), and the thin film shape Cooling the memory alloy 12 to martensite, and having a residual compressive stress (102), etching the substrate (10) to expose a portion of the thin-film-shaped storage alloy (12) and In step 104, the exposed portion of the thin film storage alloy 12 is warped and deformed by residual compressive stress, and when the thin film storage alloy 12 is heated to form a matrix, the recording liquid 20 becomes flat. Spraying step 105, and the thin film-shaped retaining alloy 12 cools to become martensite, and is deflected by residual compressive stress, and the recording liquid 20 is replenished into the liquid chamber 14; And the respective stages according to the temperature change of the thin film-type storage alloy 12. 107, a recording liquid injecting method performed by the print head, comprising the step (107), (108) are printed while repeating. Depositing a thin film-type storage alloy 12 and then performing heat treatment to crystallize, cooling to become martensite of the thin film-type storage alloy 12 (201), and the thin film-type storage alloy 12 A step 202 of applying an external force to warp deformation, a step 203 of heating the thin-film-shaped retaining alloy 12 to be flat in the parent phase, and the cooling, deformation, and heating steps 201 and 202 ( Repeating 203 several times to learn the thin film-shaped storage alloy 12 (204), and when the thin film-shaped storage alloy 12 passed through the learning step 204 is cooled to martensite, Step 205 of bending deformation, the step 206 of spraying the recording liquid 20 while the thin film-shaped retaining alloy 12 is heated and becomes flat, and the thin film-shaped retaining alloy 12 are cooled. When the martensite is formed, the recording liquid 20 is replenished into the liquid chamber 14 due to the bending deformation. 207, and, and recording liquid injecting method performed by the print head with a step 208 to be printed as the respective steps 206, 207 are repeated according to the temperature change of the thin-film shape memory alloy (12).

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