KR19980076093A - Thin film transistor liquid crystal display device substrate using molybdenum tungsten alloy as the source and drain metal and method for manufacturing same - Google Patents
Thin film transistor liquid crystal display device substrate using molybdenum tungsten alloy as the source and drain metal and method for manufacturing same Download PDFInfo
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- KR19980076093A KR19980076093A KR1019970012637A KR19970012637A KR19980076093A KR 19980076093 A KR19980076093 A KR 19980076093A KR 1019970012637 A KR1019970012637 A KR 1019970012637A KR 19970012637 A KR19970012637 A KR 19970012637A KR 19980076093 A KR19980076093 A KR 19980076093A
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
Abstract
유기 절연막을 보호막으로 사용하는 TFT-LCD 기판에서 몰리브덴 텅스텐(MoW) 합금을 이용하여 소스 전극 및 드레인 전극을 형성함으로써 화소 전극과의 접촉부의 접촉(contact) 저항이 감소된다.In a TFT-LCD substrate using an organic insulating film as a protective film, contact resistance with a pixel electrode is reduced by forming a source electrode and a drain electrode using a molybdenum tungsten (MoW) alloy.
Description
이 발명은 박막 트랜지스터 액정 표시 소자(thin film transistor liquid crystal display : TFT-LCD, 이하 'TFT-LCD'라 한다)에 관한 것으로서, 보다 상세하게는 유기 절연막을 보호막으로 사용하는 박막 트랜지스터 기판 및 그 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor liquid crystal display (TFT-LCD, hereinafter referred to as 'TFT-LCD'), and more particularly, to a thin film transistor substrate using an organic insulating film as a protective film, and fabrication thereof. It is about a method.
TFT-LCD를 제작하는 종래의 방법은 에치 백(etch back)과 에치 스토퍼(etch stopper) 방법으로 나눌 수 있는데, 에치 백 방법에서는 5매 마스크(mask)를 사용한 공정이 주로 적용되고 있다. 5 매 마스크 공정에서는 투명 전극(indium tin oxide)으로 된 화소(pixel) 전극과 데이터 라인(data line)간의 거리가 가까워서 측면 전계(lateral electric field) 등에 의한 영향으로 컬러 필터(color filter) 기판을 형성할 때 리버스 틸트 도메인(reverse tilt domain)이 발생된다. 이러한 리버스 틸트 도메인은 광 누설을 발생시켜 디스플레이(display) 특성을 저하시킨다. 이러한 문제를 해결하기 위해서 블랙 매트릭스(black matrix)의 폭을 증가시키는 방법이 사용될 수 있는데 이 방법은 개구율이 줄어드는 단점이 있다. 따라서 개구율을 증가시키고 광 누설의 문제를 해결하기 위하여 유기 절연막을 보호막으로 사용하는 방법이 사용된다.Conventional methods for manufacturing TFT-LCDs can be divided into etch back and etch stopper methods. In the etch back method, a process using five masks is mainly applied. In the five mask process, a distance between a pixel electrode made of indium tin oxide and a data line is close to form a color filter substrate under the influence of a lateral electric field. When the reverse tilt domain (reverse tilt domain) is generated. This reverse tilt domain generates light leakage and degrades display characteristics. In order to solve this problem, a method of increasing the width of the black matrix may be used, which has a disadvantage in that the aperture ratio is reduced. Therefore, in order to increase the aperture ratio and solve the problem of light leakage, a method using an organic insulating film as a protective film is used.
아크릴, 폴리이미드(polyimide) 등의 유기 절연막을 보호막으로 사용하는 상기의 TFT-LCD 제조 방법에서는 유기 절연막에 다량으로 포함된 수소(H2O) 성분에 의해 소스/드레인(source/drain) 금속(metal) 상부에 산화층(oxide layer)이 형성되거나, 채널부의 에칭(etching)시에 염소(Cl)를 사용함에 따라 소스/드레인 금속 상부에 염화물(chlorination)에 의한 절연층이 형성된다. 따라서 드레인 패턴(drain pattern)과 픽셀 전극을 연결할 때에 접촉(contact)부의 접촉 저항이 높아지는 단점을 가지고 있다. 이러한 접촉 저항의 증가는 TFT-LCD의 구동시에 데이터 라인에서 신호 지연을 발생시키고, 이로 인해 디스플레이에서 세로 줄무늬 현상이 나타나는 문제점이 있다.In the above-described TFT-LCD manufacturing method using an organic insulating film such as acryl or polyimide as a protective film, the source / drain metal is formed by the hydrogen (H 2 O) component contained in a large amount in the organic insulating film ( An oxide layer is formed on the metal or an insulating layer is formed on the source / drain metal by chlorination as the chlorine (Cl) is used during etching of the channel portion. Therefore, the contact resistance of the contact portion increases when the drain pattern is connected to the pixel electrode. This increase in contact resistance causes signal delay in the data line when the TFT-LCD is driven, which causes a problem of vertical streaks in the display.
본 발명은 상기한 문제점을 해결하기 위한 것으로서, 본 발명의 목적은 유기 절연막을 보호막으로 이용하고, 소스/드레인 접촉 저항을 줄여 디스플레이에서 발생하는 세로 줄무늬 현상을 제거할 수 있는 박막 트랜지스터 표시 장치 및 그 제조방법을 제공하는 것이다.SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to use a thin film transistor display device capable of eliminating vertical streaks in a display by using an organic insulating film as a protective film and reducing source / drain contact resistance. It is to provide a manufacturing method.
도 1은 본 발명의 실시예에 따른 TFT-LCD 기판의 단면도이고,1 is a cross-sectional view of a TFT-LCD substrate according to an embodiment of the present invention,
도 2가 내지 도 2라는 본 발명의 실시예에 따른 TFT-LCD 기판의 제조 방법을 도시하는 단면도이다.2 to 2 are cross-sectional views showing the manufacturing method of the TFT-LCD substrate according to the embodiment of the present invention.
이러한 목적을 달성하기 위하여, 본 발명에 따른 TFT-LCD 기판 및 그 제조 방법에서는 기판 위에 게이트(gate) 전극 및 유지 용량(storage capacitor) 전극을 형성하고, 그 위에 게이트 절연막, 반도체층 및 접촉층을 차례로 형성한다. 상기 접촉층 위에 몰리브덴 텅스텐(MoW) 합금으로 된 소스 전극과 드레인 전극을 형성하고 그 위에 유기 절연막으로 된 보호막을 형성하고, 그 위에 접촉 홀(contact hole)을 통해 상기한 드레인 전극과 연결된 화소 전극을 형성한다.In order to achieve this object, in a TFT-LCD substrate and a method of manufacturing the same, a gate electrode and a storage capacitor electrode are formed on the substrate, and a gate insulating film, a semiconductor layer, and a contact layer are formed thereon. Form in turn. A source electrode and a drain electrode of molybdenum tungsten (MoW) alloy are formed on the contact layer, and a protective film of an organic insulating layer is formed thereon, and a pixel electrode connected to the drain electrode through a contact hole is formed thereon. Form.
상기한 바와 같이, 본 발명의 따른 TFT-LCD 기판과 그 제조 방법에서는 몰리브덴 텅스텐 합금을 사용하여 소스 및 드레인 전극을 형성함으로써 접촉 저항을 감소시킬 수 있으며, 따라서 접촉 저항에 기인한 데이터 라인에서의 신호 지연을 억제할 수 있기 때문에 TFT-LCD의 디스플레이에서 세로 줄무늬가 발생하는 문제점을 해결할 수 있다.As described above, in the TFT-LCD substrate and the manufacturing method thereof according to the present invention, the contact resistance can be reduced by forming the source and drain electrodes using molybdenum tungsten alloy, and thus the signal in the data line due to the contact resistance Since the delay can be suppressed, the problem of vertical stripes occurring in the display of the TFT-LCD can be solved.
이하 본 발명의 바람직한 실시예를 기재한다. 그러나 하기한 실시예는 본 발명의 바람직한 하나의 실시예일 뿐 본 발명이 하기한 실시예에 한정되는 것은 아니다.Hereinafter, preferred embodiments of the present invention will be described. However, the following examples are only one preferred embodiment of the present invention and the present invention is not limited to the following examples.
도 1에 본 발명의 실시예에 따른 TFT-LCD 기판의 단면을 나타내었다. 도 1에서와 같이 기판(10) 위에 알루미늄(Al)이나 크롬(Cr) 등을 사용한 게이트 전극(20) 및 유지 용량 전극(30)이 형성되어 있다. 상기 게이트 전극(20) 및 유지 용량 전극(30) 위에 질화막(SiNx) 등으로 형성된 게이트 절연막(40)이 형성되어 있다. 상기 게이트 절연막(40) 위에 비정질 실리콘(amorphous silicon)층의 반도체층(50)이 형성되어 있고 그 위에 N+비정질 실리콘을 이용한 접촉층(51)이 형성되어 있다. 상기 접촉층(51) 위에 몰리브덴 텅스텐(MoW) 합금으로 된 소스 전극(60)과 드레인 전극(70)이 형성되어 있고 그 위에 유기 절연막으로 된 보호막(80)이 있으며, 접촉 홀(contact hole)을 통해 드레인 전극(70)과 연결된 ITO막인 화소 전극(90)이 형성되어 있다.1 shows a cross section of a TFT-LCD substrate according to an embodiment of the present invention. As shown in FIG. 1, a gate electrode 20 and a storage capacitor electrode using aluminum (Al), chromium (Cr), or the like are formed on the substrate 10. A gate insulating film 40 formed of a nitride film SiNx or the like is formed on the gate electrode 20 and the storage capacitor electrode 30. A semiconductor layer 50 of an amorphous silicon layer is formed on the gate insulating layer 40, and a contact layer 51 using N + amorphous silicon is formed thereon. A source electrode 60 and a drain electrode 70 made of molybdenum tungsten (MoW) alloy are formed on the contact layer 51, and a protective film 80 made of an organic insulating layer is formed thereon, and a contact hole is formed. The pixel electrode 90, which is an ITO film connected to the drain electrode 70, is formed.
상기의 TFT 기판에서는 소스 전극(60) 또는 드레인 전극(70)의 상부에 부수적으로 형성된 산화층이나 염화물에 의한 절연층에 의해 증가된 접촉 저항을 줄이기 위하여 소스/드레인용 금속으로 몰리브덴 텅스텐 합금을 사용한다. 크롬(Cr) 등을 이용하여 소스/드레인 전극을 형성한 경우에 접촉 저항은 108Ω 이상의 값으로 측정되지만, 본 발명의 실시예와 같이 몰리브덴 텅스텐을 소스/드레인 금속으로 사용할 경우에는 103Ω 정도의 낮은 접촉 저항을 갖는다.In the above TFT substrate, molybdenum tungsten alloy is used as the source / drain metal in order to reduce the contact resistance increased by an insulating layer formed by an oxide layer or chloride incidentally formed on the source electrode 60 or the drain electrode 70. . In the case where the source / drain electrodes are formed using chromium (Cr) or the like, the contact resistance is measured to a value of 10 8 Ω or more, but when molybdenum tungsten is used as the source / drain metal as in the embodiment of the present invention, 10 3 Ω Has a low contact resistance.
도 2가 내지 도 2라에 본 발명의 실시예에 따른 TFT-LCD 기판의 제조 방법을 나타내는 단면을 도시하였다. 도1과 동일한 내용은 동일한 부호로 표시하였다. 도 2가에서 유리(glass)와 같은 투명한 기판(10) 위에 알루미늄이나 몰리브덴을 사용하여 게이트 전극(20) 및 유지 용량 전극(30)을 형성한다.2A through 2D are cross-sectional views illustrating a method of manufacturing a TFT-LCD substrate according to an embodiment of the present invention. The same contents as in Fig. 1 are indicated by the same reference numerals. In FIG. 2, the gate electrode 20 and the storage capacitor electrode 30 are formed using aluminum or molybdenum on a transparent substrate 10 such as glass.
도 2나와 같이 상기한 게이트 전극(20) 및 유지 용량 전극(30) 위에 질화막 등을 사용한 게이트 절연막(40)을 형성하고, 그 위에 비정질 실리콘을 이용한 반도체층(50)과 N+비정질 실리콘을 이용한 접촉층(51)을 연속으로 증착한다.As shown in FIG. 2, a gate insulating film 40 using a nitride film or the like is formed on the gate electrode 20 and the storage capacitor electrode 30, and the semiconductor layer 50 using amorphous silicon and N + amorphous silicon are formed thereon. The contact layer 51 is deposited continuously.
도 2다에서와 같이 몰리브덴을 이용하여 소스 전극(60)과 드레인 전극(70)을 접촉층(51) 위에 형성한다.As shown in FIG. 2, the source electrode 60 and the drain electrode 70 are formed on the contact layer 51 using molybdenum.
도 2라에서와 같이 접촉층(51)을 패터닝(patterning) 하고, 유기절연막을 사용하여 보호막(80)을 기판(10) 위의 전면에 걸쳐 형성한다. 도 1에서와 같이 상기 보호막(80)에 접촉 홀을 뚫어 드레인 전극(70)과 연결되도록 하면서 ITO를 이용하여 투명 화소 전극(90)을 상기 보호막(80) 위에 형성한다.As shown in FIG. 2A, the contact layer 51 is patterned, and a protective film 80 is formed over the entire surface on the substrate 10 using an organic insulating film. As shown in FIG. 1, the transparent pixel electrode 90 is formed on the passivation layer 80 using ITO while making contact holes in the passivation layer 80 to be connected to the drain electrode 70.
상기한 TFT-LCD 제조 방법에서는 소스 전극(60)과 드레인 전극(70)을 몰리브덴 텅스텐 합금을 사용하여 형성하므로 유기 절연막으로 된 보호막으로 인하여 증가된 접촉 저항을 감소시킬 수 있다. 일반적으로 패널(panel)의 디스플레이에서 데이터 라인 방향으로 세로 줄무늬 현상이 발생하는 경우에 접촉 저항은 106Ω이상으로 측정되는데, 본 발명의 실시예와 같이 몰리브덴 텅스텐 합금을 소스/드레인 금속으로 사용하여 TFT-LCD를 제조할 경우에는 103Ω정도의 낮은 접촉 저항을 가진다.In the above-described TFT-LCD manufacturing method, since the source electrode 60 and the drain electrode 70 are formed using molybdenum tungsten alloy, an increased contact resistance can be reduced due to a protective film made of an organic insulating film. In general, when vertical stripes occur in the direction of a data line in a display of a panel, the contact resistance is measured to be 10 6 Ω or more. As in the embodiment of the present invention, a molybdenum tungsten alloy is used as a source / drain metal. When manufacturing a TFT-LCD has a low contact resistance of about 10 3 Ω.
상기한 바와 같이, 본 발명의 따른 TFT-LCD 기판과 그 제조 방법에서는 몰리브덴 텅스텐 합금을 사용하여 소스 및 드레인 전극을 형성함으로써 접촉 저항을 감소시킨다. 따라서 접촉 저항에 기인한 데이터 라인에서의 신호 지연을 억제할 수 있기 때문에 디스플레이에서 세로 줄무늬가 발생하는 문제점을 해결할 수 있다.As described above, in the TFT-LCD substrate according to the present invention and the manufacturing method thereof, the contact resistance is reduced by forming the source and drain electrodes using molybdenum tungsten alloy. Therefore, since the signal delay in the data line due to the contact resistance can be suppressed, the problem of vertical stripes occurring in the display can be solved.
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| KR1019970012637A KR100569729B1 (en) | 1997-04-07 | 1997-04-07 | Thin film transistor liquid crystal display device substrate using molybdenum tungsten alloy as the source and drain metal and method for manufacturing same |
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| KR1019970012637A KR100569729B1 (en) | 1997-04-07 | 1997-04-07 | Thin film transistor liquid crystal display device substrate using molybdenum tungsten alloy as the source and drain metal and method for manufacturing same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010058150A (en) * | 1999-12-24 | 2001-07-05 | 박종섭 | Method for fabricating thin-film-transistor liquid crystal display with organic insulator as passivation |
| KR100797374B1 (en) * | 2001-06-05 | 2008-01-22 | 엘지.필립스 엘시디 주식회사 | Liquid Crystal Display and Fabricating Method Thereof |
| KR100878263B1 (en) * | 2001-06-13 | 2009-01-13 | 삼성전자주식회사 | thin film transistor array panel for liquid crystal display and manufacturing method thereof |
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| JPS6083373A (en) * | 1983-10-14 | 1985-05-11 | Nec Corp | Thin film transistor array and manufacture thereof |
| US5202572A (en) * | 1988-09-21 | 1993-04-13 | Fuji Xerox Co., Ltd. | Thin film transistor |
| US5130263A (en) * | 1990-04-17 | 1992-07-14 | General Electric Company | Method for photolithographically forming a selfaligned mask using back-side exposure and a non-specular reflecting layer |
| US6372534B1 (en) * | 1995-06-06 | 2002-04-16 | Lg. Philips Lcd Co., Ltd | Method of making a TFT array with photo-imageable insulating layer over address lines |
| JPH0992716A (en) * | 1995-09-21 | 1997-04-04 | Toshiba Corp | Non-single crystal semiconductor device and fabrication thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010058150A (en) * | 1999-12-24 | 2001-07-05 | 박종섭 | Method for fabricating thin-film-transistor liquid crystal display with organic insulator as passivation |
| KR100797374B1 (en) * | 2001-06-05 | 2008-01-22 | 엘지.필립스 엘시디 주식회사 | Liquid Crystal Display and Fabricating Method Thereof |
| KR100878263B1 (en) * | 2001-06-13 | 2009-01-13 | 삼성전자주식회사 | thin film transistor array panel for liquid crystal display and manufacturing method thereof |
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