KR19980055935A - Wafer Development Method - Google Patents
Wafer Development Method Download PDFInfo
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- KR19980055935A KR19980055935A KR1019960075172A KR19960075172A KR19980055935A KR 19980055935 A KR19980055935 A KR 19980055935A KR 1019960075172 A KR1019960075172 A KR 1019960075172A KR 19960075172 A KR19960075172 A KR 19960075172A KR 19980055935 A KR19980055935 A KR 19980055935A
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- wafer
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
감광막이 노광된 웨이퍼 현상시 용해잔류물이 남아서 패턴 형상에 악영향을 미치는 것을 방지하기 위하여 상기 웨이퍼를 현상용액이 미리 뿌려진 용기에 거꾸로 돌려 표면만 현상액에 넣어 현상한다. 따라서 용해된 감광막 잔여물이 미세 패턴 사이에 침투하지 못하고 밑으로 가라앉아 용해잔류물로 인한 악영향을 방지하는 웨이퍼 현상방법이 개시된다.In order to prevent dissolution residues remaining on the pattern shape when the photosensitive film is exposed to the wafer, the wafer is turned upside down in a container sprayed with a developing solution, and only the surface thereof is put into the developing solution. Accordingly, a method of developing a wafer is disclosed in which dissolved photoresist residues do not penetrate between fine patterns and sink to the bottom to prevent adverse effects due to dissolved residues.
Description
본 발명은 웨이퍼 현상방법에 관한 것으로 특히, 현상시 웨이퍼 표면에 잔류 용해물을 완전하게 제거하는 웨이퍼 현상방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer developing method, and more particularly, to a wafer developing method for completely removing residual melt on a wafer surface during development.
종래의 웨이퍼 현상방법을 도 1을 통하여 설명하면 다음과 같다.A conventional wafer developing method is described below with reference to FIG. 1.
도 1은 현상 챔버(Develop Chamber)(1) 상에 웨이퍼 받침대(2) 및 노광된 웨이퍼(3)가 형성되고 상기 웨이퍼(3)를 노즐(4)을 통하여 현상액이 공급되는 상태의 단면도이다. 상기와 같이 종래 현상방법은 노광된 웨이퍼(3)를 감광막이 형성하는 장치와 동일한 장치에 사용된다. 상기 웨이퍼 받침대(2) 상부면에 놓여진 상기 웨이퍼(3) 표면에 현상액을 공급함과 동시에 상기 웨이퍼(3)를 회전시켜 현상액이 상기 웨이퍼(3) 표면에 골고루 펴지도록 한다. 그 후 상기 웨이퍼(3)를 일정시간 정지와 교반을 하여 현상한다. 이어서 순수를 사용하여 헹굼처리를 한 후 고속으로 상기 웨이퍼(3)를 회전시켜 건조시킨다. 상기 종래의 방식은 웨이퍼(3)상에 현상액이 뿌려지기 때문에 감광막이 용해된 후 남은 잔류용해물이 미세한 패턴 사이에 침투하거나 초기에 용해시킨 현상액이 계속적으로 웨이퍼(3) 표면에 고여 있게 된다. 따라서 상기 고여 있는 현상액이 용해 잔류물과 섞여 현상액 농도를 저하시킴으로써 적절한 현상이 되지 않는다. 또 상기 웨이퍼(3)의 헹굼공정 후에도 미세 패턴 틈 사이에 고여 있던 용해잔류물이 완전히 씻겨지지 않고 남아서 패턴 형성에 악영향을 미치게 된다.1 is a cross-sectional view of a state in which a wafer pedestal 2 and an exposed wafer 3 are formed on a development chamber 1 and the developer is supplied through the nozzle 4 to the wafer 3. As described above, the conventional developing method is used in the same apparatus as the apparatus in which the photosensitive film forms the exposed wafer 3. The developer is supplied to the surface of the wafer 3 placed on the upper surface of the wafer pedestal 2 and the wafer 3 is rotated so that the developer is evenly spread on the surface of the wafer 3. Thereafter, the wafer 3 is developed by stopping and stirring for a predetermined time. Subsequently, after rinsing with pure water, the wafer 3 is rotated and dried at high speed. In the conventional method, the developer is sprinkled onto the wafer 3, so that the residual solution remaining after the photoresist film is dissolved is penetrated between the fine patterns or the developer initially dissolved is continuously accumulated on the surface of the wafer 3. Therefore, the accumulated developer is mixed with the dissolved residue to lower the developer concentration, thereby preventing proper development. In addition, even after the rinsing process of the wafer 3, the dissolved residue accumulated between the fine pattern gaps is not completely washed out, which adversely affects the pattern formation.
따라서 본 발명은 현상챔버내에 현상용액이 담겨진 용기를 형성하여 노광된 웨이퍼 표면을 거꾸로 하여 현상하므로 상기 문제점을 해소할 수 있는 웨이퍼 현상방법을 제공하는데 그 목적이 있다.Accordingly, an object of the present invention is to provide a wafer developing method that can solve the above problems by forming a container containing a developing solution in a developing chamber and inverting the exposed wafer surface.
상기 목적을 달성하기 위한 본 발명에 따른 웨이퍼 세정방법은 현상챔버내에 형성된 용기에 현상액노즐을 통하여 일정량의 현상액을 상기 용기에 뿌려주는 단계와, 감광막이 노광된 웨이퍼를 로딩암을 이용하여 노광된 상기 웨이퍼 표면을 밑으로 하여 현상액이 담겨진 상기 용기에 일정시간 넣어 현상하는 단계와, 일정시간 현상되어진 상기 웨이퍼를 상기 용기로부터 들어올린 후 감광막을 용해시킨 현상액을 배출구를 통하여 배출하는 단계와, 순수노즐을 통하여 순수를 상기 용기에 일정량 뿌려주는 단계와, 현상된 상기 웨이퍼를 순수가 담겨진 상기 용기에 넣어 세정하는 단계와, 충분히 세정된 상기 웨이퍼를 상기 용기로부터 들어올려 건조시키는 단계로 이루어지는 것을 특징으로 한다.The wafer cleaning method according to the present invention for achieving the above object is spraying a predetermined amount of developer onto the container through a developer nozzle in a container formed in the developing chamber, and the wafer exposed to the photosensitive film using the loading arm Putting the developer under the surface of the wafer in the container containing the developer for a predetermined time, lifting the wafer, which has been developed for a period of time, from the container, and then discharging the developing solution in which the photosensitive film is dissolved through an outlet; Spraying a predetermined amount of pure water into the container, washing the developed wafer into the container containing pure water, and lifting and drying the sufficiently cleaned wafer from the container.
도 1은 종래 웨이퍼 현상방법을 설명하기 위한 단면도1 is a cross-sectional view illustrating a conventional wafer developing method.
도 2는 본 발명에 따른 웨이퍼 현상방법을 설명하기 위한 단면도.2 is a cross-sectional view for explaining a wafer developing method according to the present invention.
* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
1 및 11 : 현상챔버2 : 웨이퍼 받침대1 and 11: Development chamber 2: Wafer support
3 및 13 : 웨이퍼4 및 15 : 현상액 노즐3 and 13: wafer 4 and 15: developer nozzle
12 : 용기14 : 로딩암12 container 14 loading arm
16 : 순수노즐17 : 배출구16: pure nozzle 17: outlet
이하, 첨부된 도면을 참조하여 본 발명을 상세히 설명하기로 한다.Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
도 2는 본 발명에 따른 웨이퍼 현상방법을 설명하기 위한 단면도이다.2 is a cross-sectional view for explaining a wafer developing method according to the present invention.
도 2에 도시된 바와 같이 배출구(17)가 형성된 현상챔버(11)상에 용기(12)를 형성한 다음 현상액노즐(15)을 통하여 일정량의 현상액을 용기(12)에 뿌린다. 감광막이 노광된 웨이퍼(13)를 로딩암( Loading Arm)(14)으로 상기 웨이퍼(13) 표면 상기 현상액에 접하도록 한다. 그후 상기 웨이퍼(13) 표면만 현상액이 담겨진 용기에 50 내지 60초간 담근다. 그리고 담겨진 상기 웨이퍼(13)를 좌우로 흔들어 골고루 현상할 수 있도록 한다. 이때 이미 용해된 용해잔류물은 용기(12) 밑으로 침전되어 가라앉게 된다. 일정시간 현상되어진 웨이퍼(13)를 용기(12)로부터 들어올린 후 상기 현상액을 배출구(17)로 배출한다. 그 후 순수노즐(16)을 통하여 적당량의 순수를 상기 용기(12)에 뿌린 다음 상기 웨이퍼(13)를 상기 용기(12)에 담긴 순수에 넣어 저속으로 회전시켜 세정을 실시한다. 그후 충분히 세척한 웨이퍼(13)를 들어올려 현상챔버(11)내에서 고속으로 회전시켜 건조시킨다.As shown in FIG. 2, the container 12 is formed on the developing chamber 11 in which the discharge port 17 is formed, and then a certain amount of the developer is sprayed on the container 12 through the developer nozzle 15. The photosensitive film exposed wafer 13 is brought into contact with the developer on the surface of the wafer 13 with a loading arm 14. Thereafter, only the surface of the wafer 13 is immersed in a container containing the developer for 50 to 60 seconds. Then, the contained wafer 13 may be shaken from side to side to develop evenly. At this time, the dissolved dissolved residue is settled under the container 12 to sink. After the wafer 13 that has been developed for a predetermined time is lifted from the container 12, the developer is discharged to the discharge port 17. Thereafter, an appropriate amount of pure water is sprayed into the container 12 through the pure nozzle 16, and then the wafer 13 is placed in the pure water contained in the container 12 and rotated at a low speed to perform cleaning. Thereafter, the sufficiently washed wafer 13 is lifted up and rotated at high speed in the developing chamber 11 to be dried.
상술한 바와 같이 웨이퍼 현상시 용해잔류물을 완전히 제거하기 위하여 노광된 웨이퍼를 현상용액이 미리 뿌려진 용기에 거꾸로 돌려 표면만 현상액에 넣어 현상한다. 따라서 용해된 감광막 잔여물이 미세 패턴 사이에 침투하지 못하고 밑으로 가라앉아 용해잔류물로 인한 악영향을 방지하여 패턴형성에 유리한 효과가 있다.As described above, in order to completely remove the dissolved residue during the development of the wafer, the exposed wafer is turned upside down in a container sprayed with the developing solution, and only the surface thereof is developed into the developing solution. Therefore, the dissolved photoresist residues do not penetrate between the fine patterns and sink to the bottom, thereby preventing adverse effects due to the dissolved residues, which is advantageous in pattern formation.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019960075172A KR19980055935A (en) | 1996-12-28 | 1996-12-28 | Wafer Development Method |
Applications Claiming Priority (1)
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KR1019960075172A KR19980055935A (en) | 1996-12-28 | 1996-12-28 | Wafer Development Method |
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KR1019960075172A KR19980055935A (en) | 1996-12-28 | 1996-12-28 | Wafer Development Method |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100442146B1 (en) * | 2002-06-17 | 2004-07-27 | 동부전자 주식회사 | Developing apparatus for manufacturing a semiconductor device |
KR100490520B1 (en) * | 2001-10-03 | 2005-05-19 | 호야 가부시키가이샤 | Coating Film Drying Method, Coating Film Forming Method, and Coating Film Forming Apparatus |
-
1996
- 1996-12-28 KR KR1019960075172A patent/KR19980055935A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100490520B1 (en) * | 2001-10-03 | 2005-05-19 | 호야 가부시키가이샤 | Coating Film Drying Method, Coating Film Forming Method, and Coating Film Forming Apparatus |
KR100442146B1 (en) * | 2002-06-17 | 2004-07-27 | 동부전자 주식회사 | Developing apparatus for manufacturing a semiconductor device |
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