KR19980051527A - Method of manufacturing photoresist mask with increased etching selectivity for etched layer - Google Patents
Method of manufacturing photoresist mask with increased etching selectivity for etched layer Download PDFInfo
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- KR19980051527A KR19980051527A KR1019960070429A KR19960070429A KR19980051527A KR 19980051527 A KR19980051527 A KR 19980051527A KR 1019960070429 A KR1019960070429 A KR 1019960070429A KR 19960070429 A KR19960070429 A KR 19960070429A KR 19980051527 A KR19980051527 A KR 19980051527A
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Abstract
본 발명은 피식각층에 대한 식각선택비를 높인 감광막 마스크 제조방법에 관한 것으로, 피식각층에 대하여 감광막 마스크의 식각선택비를 높이기 위하여 비소(As) 또는 불화붕소(BF2)와 같은 불순물을 이온주입하여 상기 불순물들이 감광막 표면을 단단하게 하는 것이다.The present invention relates to a method for manufacturing a photoresist mask having an increased etch selectivity with respect to an etched layer, and ion implantation of impurities such as arsenic (As) or boron fluoride (BF 2 ) to increase the etch selectivity of the photoresist mask with respect to the etched layer. Thus, the impurities harden the surface of the photoresist film.
Description
본 발명은 반도체소자 제조시 이용되는 감광막 마스크 제조방법에 관한 것으로, 특히 피식각층에 대한 식각선택비를 높이기 위해 불순물을 이온주입하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a photoresist mask used in the manufacture of a semiconductor device, and more particularly, to a method of ion implantation of impurities in order to increase an etching selectivity for an etching target layer.
일반적으로 포토리소그라피 공정을 진행하기 위하여 피식각층 상부에 감광막을 도포하고, 마스크를 이용한 노광 및 현상 공정으로 감광막 패턴을 형성한 다음, 이것을 마스크로 이용하여 피식각층을 식각하여 피식각층 패턴을 형성하는 공정으로 이루어진다.In general, a photosensitive film is coated on the etched layer in order to proceed with the photolithography process, a photosensitive film pattern is formed by an exposure and development process using a mask, and then a etched layer is etched using this as a mask to form an etched layer pattern. Is done.
한편, 피식각층은 여러가지인데 예를들어 금속층, 폴리실리콘층, 절연층으로 이루어지며, 반도체소자가 고집적화 됨에 따라 패턴이 점점 미세화되기 때문에 감광막 패턴과 피식각층과는 식각 선택비가 중요한 인자로 작용하게 된다.On the other hand, the etched layer is various, for example, made of a metal layer, a polysilicon layer, an insulating layer, and as the semiconductor device becomes highly integrated, the pattern becomes finer, so the etching selectivity between the photoresist pattern and the etched layer becomes an important factor. .
따라서, 종래에는 피식각층에 대한 감광막 패턴의 식각 선택비를 향상시키기 위하여 감광막의 열처리 조건을 변화시키는 방법을 이용하였는데 예를들어 노광후 베이크 공정의 온도를 향상시키거나 시간을 늘리는 공정이 있으며, 또는 감광막을 경화시킬때 자외선 경화 방법을 이용하는 방법등이 있다. 그러나, 이러한 방법으로는 원하는 만큼의 높은 식각 선택비를 얻기가 어려운 문제가 있다.Therefore, conventionally, a method of changing the heat treatment conditions of the photoresist film is used in order to improve the etching selectivity of the photoresist pattern with respect to the etched layer. For example, there is a process of improving the temperature of the post-exposure bake process or increasing the time. The method of using an ultraviolet curing method, etc. when hardening a photosensitive film | membrane are mentioned. However, this method has a problem that it is difficult to obtain as high a etching selectivity as desired.
감광막 마스크의 식각선택비가 낮아 식각공정시 임계크기 변화를 유발하므로 산화막을 마스크로 하는 공정이 필요하고, 콘택홀 식각 공정의 경우 식각선택비가 낮으면 콘택홀 표면이 일그러지고, 콘택홀의 크기가 증가하여 절연 여유가 적어져 중대한 일드(Yield) 손실을 가져올 수 있다. 그리고, 금속 공정에서는 금속층 식각시 감광막 마스크에 대한 충분한 선택비를 얻지 못해 산화막과 같은 하드 마스크를 이용하여 셀 지역과 주변회로 지역에서 단차에 의한 식각 타켓 증가를 대체하고 있다.Since the etching selectivity of the photoresist mask is low, it causes the threshold size change during the etching process, so a process using an oxide film is required.In the case of the contact hole etching process, if the etching selectivity is low, the contact hole surface is distorted and the size of the contact hole is increased. Less insulation margin can result in significant yield losses. In the metal process, a sufficient selection ratio for the photoresist mask is not obtained in etching the metal layer, and thus, a hard mask such as an oxide layer is used to replace the increase in the etching target due to the step in the cell region and the peripheral circuit region.
본 발명은 감광막 마스크의 식각선택비를 높이기 위하여 비소(As) 또는 불화붕소(BF2)와 같은 불순물을 이온주입하여 상기 불순물들이 감광막 표면을 단단하게하는 성질을 이용하여 피식각층에 대한 식각선택비를 높인 감광막 마스크 제조하는 방법을 제공하는데 그 목적이 있다.In order to increase the etching selectivity of the photoresist mask, the present invention utilizes an ion implantation of an impurity such as arsenic (As) or boron fluoride (BF 2 ) to harden the surface of the photoresist layer, thereby making it possible to select an etching selectivity for the etching layer. It is an object of the present invention to provide a method for manufacturing a photoresist mask having a higher level.
도 1 및 도 2는 본 발명에 의해 피식각층에 대한 식각선택비를 높인 감광막 마스크를 제조하는 방법을 도시한 것이다.1 and 2 illustrate a method of manufacturing a photoresist mask having an increased etching selectivity for an etched layer according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 피식각층 2 : 감광막 패턴1 layer etched 2: photoresist pattern
3 : 불순물 이온주입3: impurity ion implantation
상기한 목적을 달성하기 위한 본 발명은 피식각층 상부에 감광막을 도포하고, 마스크를 이용한 노광 및 현상 공정으로 감광막 패턴을 형성하는 공정과, 피식각층에 대하여 식각선택비를 높이기 위해 상기 감광막 패턴으로 불순물 이온 주입을 실시하는 공정을 포함하는 것을 특징으로 한다.The present invention for achieving the above object is a process of forming a photoresist pattern on the etching target layer, the photoresist pattern by the exposure and development process using a mask, and the impurities in the photoresist pattern to increase the etching selectivity for the etching layer It is characterized by including the process of performing an ion implantation.
감광막 패턴을 형성한 다음, 감광막 패턴으로 비소(As) 또는 불화붕소(BF2)와 같은 불순물을 주입함으로써 상기 불순물들이 감광막 표면을 단단하게 만들게 된다. 그 결과 감광막 패턴이 피식각층에 대하여 식각선택비가 높게 되는 것은 자명한 일이다.After the photoresist pattern is formed, impurities such as arsenic (As) or boron fluoride (BF 2 ) are implanted into the photoresist pattern to harden the photoresist surface. As a result, it is obvious that the etching selectivity of the photoresist pattern becomes high with respect to the etching layer.
상술한 목적 및 특징들, 장점은 첨부된 도면과 관련한 다음의 상세한 설명을 통하여 보다 분명해 질 것이다. 이하 첨부된 도면을 참조하여 본 발명의 실시예를 상세히 설명하면 다음과 같다.The above objects, features, and advantages will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 1 및 도 2는 본 발명에 의해 피식각층에 대한 식각선택비를 높인 감광막 마스크 제조단계를 도시한 것이다.1 and 2 illustrate a photoresist mask manufacturing step of increasing an etching selectivity for an etched layer according to the present invention.
도 1은 피식각층(1) 예를들어 금속층, 폴리실리콘층, 절연막등 상부에 감광막을 도포하고, 마스크를 이용한 노광 및 현상 공정으로 감광막 패턴(2)을 형성한 단면도이다.FIG. 1 is a cross-sectional view of a photoresist film 1 applied to an etched layer 1, for example, a metal layer, a polysilicon layer, an insulating film, and the like, and the photoresist pattern 2 is formed by an exposure and development process using a mask.
도 2는 상기 감광막 패턴(2)으로 예를들어 비소, 불화붕소, 붕소(B), 아르곤(Ar), 인(P)등의 불순물 이온주입(3)을 도시한 단면도이다.2 is a cross-sectional view showing impurity ion implantation 3 of, for example, arsenic, boron fluoride, boron (B), argon (Ar), phosphorus (P) and the like as the photosensitive film pattern 2.
참고로, 상기 불순물을 이온 주입하는 것은 상기 감광막 패턴(2)의 하드 베이크 공정을 거친다음, 실시하는 것이다.For reference, ion implantation of the impurity is performed after the hard bake process of the photosensitive film pattern 2.
본 발명은 상기와같이 감광막 마스크에 불순물을 이온주입하여 더욱 단단하게 함으로써 피식각층에 대한 식각선택비를 증대시킬 수 있다.The present invention can increase the etching selectivity with respect to the etched layer by implanting impurities into the photoresist mask to make it harder.
아울러 본 발명의 바람직한 실시예들은 예시의 목적을 위해 개시된 것이며, 당업자라면 본 발명의 사상과 범위안에서 다양한 수정, 변경, 부가등이 가능할 것이며, 이러한 수정 변경 등은 이하의 특허 청구의 범위에 속하는 것으로 보아야 할 것이다.In addition, preferred embodiments of the present invention are disclosed for the purpose of illustration, those skilled in the art will be able to various modifications, changes, additions, etc. within the spirit and scope of the present invention, such modifications and modifications belong to the following claims You will have to look.
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019960070429A KR19980051527A (en) | 1996-12-23 | 1996-12-23 | Method of manufacturing photoresist mask with increased etching selectivity for etched layer |
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| KR1019960070429A KR19980051527A (en) | 1996-12-23 | 1996-12-23 | Method of manufacturing photoresist mask with increased etching selectivity for etched layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030002312A (en) * | 2001-06-28 | 2003-01-09 | 주식회사 하이닉스반도체 | Pattern Forming Process of Photoresist Using Boron Implantation |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030002312A (en) * | 2001-06-28 | 2003-01-09 | 주식회사 하이닉스반도체 | Pattern Forming Process of Photoresist Using Boron Implantation |
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