KR19980044212A - Oxide removal device for semiconductor wafer - Google Patents

Oxide removal device for semiconductor wafer Download PDF

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Publication number
KR19980044212A
KR19980044212A KR1019960062259A KR19960062259A KR19980044212A KR 19980044212 A KR19980044212 A KR 19980044212A KR 1019960062259 A KR1019960062259 A KR 1019960062259A KR 19960062259 A KR19960062259 A KR 19960062259A KR 19980044212 A KR19980044212 A KR 19980044212A
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South Korea
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cooling water
water supply
line
oxide film
semiconductor wafer
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KR1019960062259A
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Korean (ko)
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KR100239710B1 (en
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서범문
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문정환
엘지반도체 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 반도체 웨이퍼의 산화막 제거장치에 관한 것으로, 종래에는 세정시 하부 전극의 온도를 상온으로 상승시키는데 시간이 많이 소요되어 생산성을 향상시키는 데 한계가 있는 문제점이 있었다. 본 발명 반도체 웨이퍼의 산화막 제거장치는 상,하부냉각수공급라인(14)(16)을 연결하는 제1연결라인(22)을 설치하고, 상,하부냉각수회수라인(15)(17)을 연결하는 제2연결라인(23)을 설치하여, 세정작업시 제1/제2연결라인(22)(23)을 통하여 상부냉각수공급라인(14)으로 흐르는 고온의 냉각수를 하부냉각수공급라인(16)으로 공급할 수 있도록 함으로서, 짧은 시간내에 하부전극을 승온시키게 되어 시간의 절감에 따른 생산성 향상효과가 있다.The present invention relates to a device for removing an oxide film of a semiconductor wafer, and in the related art, it takes a long time to raise the temperature of the lower electrode to room temperature during cleaning, which has a problem in that there is a limit in improving productivity. In the present invention, an oxide film removing apparatus of a semiconductor wafer includes a first connection line 22 connecting upper and lower cooling water supply lines 14 and 16 and connects upper and lower cooling water recovery lines 15 and 17 to each other. By installing the second connection line 23, the high temperature cooling water flowing through the first / second connection line 22, 23 through the upper cooling water supply line 14 during the cleaning operation to the lower cooling water supply line 16 By supplying, the lower electrode is heated in a short time, thereby improving productivity according to time savings.

Description

반도체 웨이퍼의 산화막 제거장치Oxide removal device for semiconductor wafer

본 발명은 반도체 웨이퍼의 산화막 제거장치에 관한 것으로, 특히 하부전극의 온도 상승시간을 절감하여 생산성을 향상시키도록 하는데 적합한 반도체 웨이퍼의 산화막 제거장치에 관한 것이다.The present invention relates to an oxide film removing apparatus of a semiconductor wafer, and more particularly, to an oxide film removing apparatus of a semiconductor wafer suitable for reducing the temperature rise time of the lower electrode to improve productivity.

일반적으로 웨이퍼 제조공정 중 산화막 제거공정은 2차에 걸쳐 이루어진다. 첫번째는 포토(PHOTO)공정을 실시한 후에 웨스트테이션(WET STATION)에서 실시하고, 두번째는 플라즈마를 이용한 에칭장치의 내부에서 실시하게 되는데, 이와 같은 종래 반도체 웨이퍼의 에칭공정 중에 플라즈마를 이용한 산화막 제거장치가 도 1에 도시되어 있는 바, 이를 간단히 설명하면 다음과 같다.In general, the oxide film removing process is performed in two stages during the wafer manufacturing process. First, the photo process is carried out in a wet station, and second, in the etching apparatus using plasma, an oxide film removing apparatus using plasma is used during the etching process of the conventional semiconductor wafer. As shown in FIG. 1, this is briefly described as follows.

도 1은 종래 반도체 웨이퍼의 산화막 제거장치의 구성을 개략적으로 보인 배관도로서, 도시된 바와 같이, 종래 반도체 웨이퍼 산화막 제거장치는 공정 챔버(CHAMBER)(1)의 내측에 상,하부전극(2)(3)이 설치되어 있고, 그 상부전극(2)에는 상부냉각수공급라인(4)과 상부냉각수회수라인(5)이 연결설치되어 있으며, 상기 하부전극(3)에는 하부냉각수공급라인(6)과 하부냉각수회수라인(7)이 연결설치되어 있다.FIG. 1 is a piping diagram schematically showing the structure of an oxide film removing device of a conventional semiconductor wafer. As shown in the drawing, the conventional semiconductor wafer oxide film removing device includes an upper and lower electrodes 2 (inside the process chamber 1). 3) is provided, the upper electrode (2) is connected to the upper cooling water supply line (4) and the upper cooling water recovery line (5), the lower electrode (3) and the lower cooling water supply line (6) and Lower cooling water recovery line 7 is connected.

그리고, 상기 상부냉각수공급라인(4)과 상부냉각수회수라인(5)의 단부에는 상기 상부전극(2)을 콘트롤하기 위한 상부제어계(8)가 설치되어 있고, 상기 하부냉각수공급라인(6)과 하부냉각수회수라인(7)의 단부에는 상기 하부전극(3)을 콘트롤 하기 위한 하부제어계(9)가 설치되어 있다.At the ends of the upper cooling water supply line 4 and the upper cooling water recovery line 5, an upper control system 8 for controlling the upper electrode 2 is installed, and the lower cooling water supply line 6 The lower control system 9 for controlling the lower electrode 3 is provided at the end of the lower cooling water recovery line 7.

또한, 상기 상,하부제어계(8)(9)에는 장비의 전체를 제어하기 위한 메인 콘트롤러(MAIN CONTROLLER)(10)가 연결설치되어 있다.In addition, the upper and lower control systems (8) (9) is connected to the main controller (MAIN CONTROLLER) 10 for controlling the entire equipment.

상기와 같이 구성되어 있는 종래 반도체 웨이퍼의 산화막 제거장치에서 공정이 진행되는 동작을 설명하면 다음과 같다.Referring to the operation of the process proceeds in the oxide film removal apparatus of the conventional semiconductor wafer configured as described above are as follows.

먼저, 하부전극(2)의 상면에 산화막을 제거하기 위한 웨이퍼를 얹어 놓고, 공정 챔버(1)의 내부로 아르곤 가스 또는 프레온 가스 등의 공정가스를 주입한 다음, RF 파워를 인가하면 플라즈마가 발생되어 웨이퍼에 형성된 불필요한 산화막을 제거하게 된다.First, a wafer for removing an oxide film is placed on an upper surface of the lower electrode 2, a process gas such as argon gas or freon gas is injected into the process chamber 1, and then plasma is generated when RF power is applied. Thus, the unnecessary oxide film formed on the wafer is removed.

그리고, 상기와 같이 공정이 진행되는 중에는 메인 콘트롤러(10)의 지시에 의하여 상부전극(2)은 40℃가 유지되고, 하부전극(3)은 0℃가 유지되도록 상,하부제어계(8)(9)에서 상,하부냉각수공급라인(4)(6)을 통하여 냉각수를 공급한다.During the process as described above, the upper electrode 2 is maintained at 40 ° C. and the lower electrode 3 is maintained at 0 ° C. according to the instruction of the main controller 10. In 9) the cooling water is supplied through the upper and lower cooling water supply lines (4) and (6).

이와 같이 웨이퍼의 산화막 제거작업이 600매 정도 진행이 되면 챔버(1) 내부에 공정 가스, 식각물질, 포토레지스트 등이 반응하여 폴리머가 증착이 되고, 이와 같은 폴리머를 제거하는 세정작업을 실시하게 되는데, 이때, 챔버(1)의 내부에 물방울이 맺히지 않도록 하부전극(3)의 온도를 상온(약 18℃이상)으로 상승시킨 상태에서 공기를 밴트한 다음, 세정액을 이용하여 폴리머를 제거하게 된다.As such, when the oxide film removal process of the wafer proceeds to about 600 sheets, a process gas, an etching material, a photoresist, and the like react inside the chamber 1 to deposit a polymer, and a cleaning operation is performed to remove such a polymer. At this time, the air is vented while raising the temperature of the lower electrode 3 to room temperature (about 18 ° C. or more) so that water droplets do not form inside the chamber 1, and then the polymer is removed using a cleaning solution.

그러나, 상기와 같은 종래 반도체 웨이퍼의 산화막 제거장치는 세정시 하부전극(3)의 온도를 상온으로 상승시키거나, 세정이 끝난 다음에는 다시 온도를 내리기 위한 시간이 많이 소요되고, 이로 인하여 생산성을 향상시키는데 한계가 있는 문제점이 있었다.However, the oxide film removing apparatus of the conventional semiconductor wafer as described above takes a long time to raise the temperature of the lower electrode 3 to room temperature during cleaning or to lower the temperature again after cleaning, thereby improving productivity. There was a problem to limit.

상기와 같은 문제점을 감안하여 안출한 본 발명의 목적은 세정작업시 하부전극의 온도상승과 하강시간을 단축하여 생산성을 향상시키도록 하는데 적합한 반도체 웨이퍼의 산화막 제거장치를 제공함에 있다.SUMMARY OF THE INVENTION An object of the present invention devised in view of the above problems is to provide an oxide film removing apparatus of a semiconductor wafer suitable for improving productivity by reducing the temperature rise and fall time of the lower electrode during the cleaning operation.

도 1은 종래 반도체 웨이퍼의 산화막 제거장치의 구성을 개략적으로 보인 배관도.1 is a piping diagram schematically showing a configuration of an oxide film removing apparatus of a conventional semiconductor wafer.

도 2는 본 발명 반도체 웨이퍼의 산화막 제거장치의 구성을 개략적으로 보인 배관도.Figure 2 is a schematic diagram showing the configuration of the oxide film removing apparatus of the present invention semiconductor wafer.

*도면의 주요 부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *

11: 챔버12,13: 상,하부전극11: chamber 12, 13: upper and lower electrodes

14,16: 상,하부냉각수공급라인15,17: 상,하부냉각수회수라인14,16: upper and lower coolant supply line 15,17: upper and lower coolant recovery line

21,21': 차단밸브22: 제1연결라인21, 21 ': Shut-off valve 22: First connection line

23: 제2연결라인24: 공급밸브23: second connection line 24: supply valve

25: 회수밸브26: 바이-패스 라인25: return valve 26: bypass line

27: 연결밸브27: connecting valve

상기와 같은 본 발명의 목적을 달성하기 위하여 챔버의 내측에 설치된 상,하부전극에 상,하부냉각수공급라인과, 상,하부냉각수회수라인이 연결설치되어 있는 반도체 웨이퍼의 산화막 제거장치에 있어서, 상기 하부냉각수공급라인과 하부냉각수회수라인 상에 차단밸브를 각각 설치하고, 상기 상,하부냉각수공급라인을 연결하는 제1연결라인과 상,하부냉각수회수라인을 연결하는 제2연결라인을 설치하며, 상기 제1/제2연결라인 상에 각각 공급밸브와 회수밸브를 설치하여서 구성된 것을 특징으로 하는 반도체 웨이퍼의 산화막 제거장치가 제공된다.In order to achieve the object of the present invention as described above, the upper and lower coolant supply line and the upper and lower coolant recovery line connected to the upper and lower electrodes provided inside the chamber, the oxide film removal apparatus of the semiconductor wafer, A shutoff valve is installed on the lower cooling water supply line and the lower cooling water recovery line, respectively, and a first connection line connecting the upper and lower cooling water supply lines and a second connection line connecting the upper and lower cooling water recovery lines are provided. Provided is an oxide film removing apparatus for a semiconductor wafer, which is formed by providing a supply valve and a recovery valve on the first and second connection lines, respectively.

이하, 상기와 같이 구성되는 본 발명 반도체 웨이퍼의 산화막 제거장치를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, an oxide film removing apparatus of a semiconductor wafer of the present invention configured as described above will be described in more detail with reference to embodiments of the accompanying drawings.

도 2는 본 발명 반도체 웨이퍼의 산화막 제거장치의 구성을 개략적으로 보인 배관도로서, 도시된 바와 같이, 본 발명 반도체 웨이퍼의 산화막 제거장치는 공정 챔버(11)의 내측에 상,하부전극(12)(13)이 설치되고, 그 상부전극(12)에는 상부냉각수공급라인(14)과 상부냉각수회수라인(15)이 연결설치되며, 상기 하부전극(13)에는 하부냉각수공급라인(16)과 하부냉각수회수라인(17)이 연결설치되고, 상기 상부냉각수공급라인(14)과 상부냉각수회수라인(15)의 단부에는 상기 상부전극(12)을 콘트롤 하기 위한 상부제어계(18)가 설치되고, 상기 하부냉각수공급라인(16)과 하부냉각수회수라인(17)의 단부에는 상기 하부전극(13)을 콘트롤 하기 위한 하부제어계(19)가 설치되며, 상기 상,하부제어계(18)(19)에는 장비의 전체제어를 하기 위한 메인 콘트롤러(20)가 연결설치되는 구성은 종래와 유사하다.FIG. 2 is a piping diagram schematically showing the structure of the oxide film removing device of the semiconductor wafer of the present invention. As shown in the drawing, the oxide film removing device of the semiconductor wafer of the present invention includes upper and lower electrodes 12 (inside the process chamber 11). 13 is installed, the upper electrode 12 is connected to the upper cooling water supply line 14 and the upper cooling water recovery line 15, the lower electrode 13, the lower cooling water supply line 16 and the lower cooling water. A recovery line 17 is connected and installed, and an upper control system 18 for controlling the upper electrode 12 is installed at ends of the upper cooling water supply line 14 and the upper cooling water recovery line 15. At the ends of the cooling water supply line 16 and the lower cooling water recovery line 17, a lower control system 19 for controlling the lower electrode 13 is installed, and the upper and lower control systems 18 and 19 are provided with The sphere where the main controller 20 is connected and installed for overall control The surname is similar to the conventional one.

여기서, 본 발명은 상기 하부냉각수공급라인(16)과 하부냉각수회수라인(17) 상에 차단밸브(21)(21')를 각각 설치하고, 상기 상,하부냉각수공급라인(14)(16)을 연결하는 제1연결라인(22)과 상,하부냉각수회수라인(15)(17)을 연결하는 제2연결라인(23)을 각각 상기 차단밸브(21)(21')의 후방에 설치하며, 상기 제1/제2 연결라인(22)(23)상에 각각 공급밸브(24)와 회수밸브(25)를 설치하여 구성된다.Here, in the present invention, the shutoff valves 21 and 21 'are respectively installed on the lower cooling water supply line 16 and the lower cooling water recovery line 17, and the upper and lower cooling water supply lines 14 and 16 are respectively provided. The second connection line 23 for connecting the first connection line 22 and the upper and lower cooling water recovery line 15, 17 for connecting to the rear of the shut-off valves 21, 21 ' The supply valve 24 and the recovery valve 25 are respectively provided on the first and second connection lines 22 and 23.

그리고, 상기 하부냉각수공급라인(16)과 하부냉각수회수라인(17)을 연결하는 바이-패스 라인(26)을 설치하고, 그 바이-패스 라인(BY-PASS LINE)(26)상에 연결밸브(27)을 설치하여 구성된다.Then, a by-pass line 26 connecting the lower cooling water supply line 16 and the lower cooling water recovery line 17 is installed, and a connecting valve on the BY-PASS LINE 26. It is comprised by installing 27.

즉, 세정공정시 하부전극(13)의 온도를 빠른시간에 승온시키기 위하여 상,하부냉각수공급라인(14)(16)을 연결하는 제1연결라인(22)을 설치하고, 상,하부냉각수회수라인(15)(17)을 연결하는 제2연결라인(23)을 설치하여, 세정공정이 시작되면 제1/제2연결라인(22)(23)을 통하여 상부냉각수공급라인(14)으로 흐르는 고온의 냉각수를 하부냉각수공급라인(16)으로 공급할 수 있도록 구성되어 있는 것이다.That is, in order to raise the temperature of the lower electrode 13 in the washing process at a rapid time, the first connection line 22 connecting the upper and lower cooling water supply lines 14 and 16 is installed, and the upper and lower cooling water recovery is performed. A second connection line 23 is provided to connect the lines 15 and 17, and when the cleaning process is started, flows to the upper cooling water supply line 14 through the first and second connection lines 22 and 23. It is configured to supply high temperature cooling water to the lower cooling water supply line (16).

상기와 같이 구성되는 본 발명 반도체 웨이퍼의 산화막 제거장치의 작용을 설명하면 다음과 같다.Referring to the operation of the oxide film removing device of the semiconductor wafer of the present invention configured as described above are as follows.

하부전극(12)의 상면에 산화막을 제거하기 위한 웨이퍼를 얹어 놓고, 공정 챔버(11)의 내부로 아르곤 가스 또는 프레온 가스 등의 공정가스를 주입하면서 RF 파워를 인가하면 플라즈마가 발생되어 웨이퍼에 형성된 불필요한 산화막을 제거하게 되는데, 이때의 상부전극(12)은 40℃가 유지되고, 하부전극(13)은 0℃가 유지되도록 상,하부제어계(18)(19)에서 상,하부냉각수공급라인(14)(16)을 통하여 냉각수를 공급한다. 이와 같이 웨이퍼의 산화막 제거작업이 600매 정도 진행이 되면 챔버(11)내부에 증착된 폴리머를 제거하는 세정작업을 실시하게 되는데, 이때, 하부냉각수공급라인(16)과 하부냉각수회수라인(17)상에 설치되어 있는 차단밸브(21)(21')를 닫고, 제1연결라인(22)과 제2연결라인(23)상에 설치되어 있는 공급밸브(24)와 회수밸브(25)를 열어서 상부냉각수공급라인(14)으로 흐르는 고온의 냉각수가 하부냉각수공급라인(16)으로 공급되어 하부전극(13)을 급속가열하게 된다.When the wafer for removing the oxide film is placed on the upper surface of the lower electrode 12, RF power is applied while injecting a process gas such as argon gas or freon gas into the process chamber 11 to generate plasma to form the wafer. Unnecessary oxide film is removed, the upper electrode 12 at this time is maintained at 40 ℃, the lower electrode 13 is maintained in the upper, lower control system 18, 19 so that the upper and lower cooling water supply line ( 14) (16) is supplied with cooling water. As described above, when the oxide film removing operation of the wafer proceeds to about 600 sheets, a cleaning operation for removing the polymer deposited in the chamber 11 is performed. In this case, the lower cooling water supply line 16 and the lower cooling water recovery line 17 are performed. To close the shutoff valves 21 and 21 'provided on the upper side, and open the supply valve 24 and the recovery valve 25 provided on the first connection line 22 and the second connection line 23. The high temperature coolant flowing in the upper cooling water supply line 14 is supplied to the lower cooling water supply line 16 to rapidly heat the lower electrode 13.

그리고, 상기와 같이 하부전극(13)의 온도를 상온(약18℃이상)으로 상승시킨 상태에서 공기를 벤트한 다음, 세정액을 이용하여 챔버(11)의 내부에 증착되어 있는 폴리머를 제거하게 되며, 이때 상기 바이-패스 라인(26)상에 설치되어 있는 연결밸브(27)는 열어서 냉각수를 순환시킴으로서 하부제어계(19)에 설치되어 있는 펌프(미도시)를 보호하도록 한다.Then, the air is vented while the temperature of the lower electrode 13 is raised to room temperature (about 18 ° C. or more) as described above, and then the polymer deposited in the chamber 11 is removed using a cleaning liquid. In this case, the connection valve 27 installed on the bypass line 26 opens to circulate the cooling water to protect the pump (not shown) installed in the lower control system 19.

상기와 같이 소정시간 세정작업을 마친 후에는 다시 공급밸브(24), 회수밸브(25), 연결밸브(27)를 딛고, 차단밸브(21)(21')를 열어서 하부전극(13)을 냉각하여 0℃상태로 유지시킨 다음, 웨이퍼의 산화막제거작업을 다시 진행한다.After cleaning the predetermined time as described above, the supply valve 24, the recovery valve 25, the connecting valve 27, and the shut-off valves 21 (21 ') are opened to cool the lower electrode 13 After maintaining the temperature at 0 ° C., the oxide film is removed from the wafer.

이상에서 상세히 설명한 바와 같이 본 발명 반도체 웨이퍼의 산화막 제거장치에 관한 것으로, 상,하부냉각수공급라인을 연결하는 제1연결라인을 설치하고, 상,하부냉각수회수라인을 연결하는 제2연결라인을 설치하여, 세정공정시 제1/제2연결라인을 통하여 상부냉각수공급라인으로 흐르는 고온의 냉각수를 하부냉각수공급라인으로 공급할 수 있도록 함으로서, 짧은 시간내에 하부전극을 승온시키게 되어 시간의 절감에 따른 생산성 향상효과가 있다.As described in detail above, the present invention relates to an oxide film removing apparatus of a semiconductor wafer, and includes a first connection line connecting upper and lower cooling water supply lines and a second connection line connecting upper and lower coolant recovery lines. In the cleaning process, high temperature cooling water flowing to the upper cooling water supply line through the first / second connection line can be supplied to the lower cooling water supply line, thereby raising the lower electrode in a short time, thereby improving productivity according to the time saving. It works.

Claims (2)

챔버의 내측에 설치된 상,하부전극에 상,하부냉각수공급라인과, 상,하부냉각수회수라인이 연결설치되어 있는 반도체 웨이퍼의 산화막 제거장치에 있어서;An oxide film removal apparatus of a semiconductor wafer, in which upper and lower cooling water supply lines and upper and lower cooling water recovery lines are connected to upper and lower electrodes provided inside the chamber; 상기 하부냉각수공급라인과 하부냉각수회수라인 상에 차단밸브를 각각 설치하고, 상기 상,하부냉각수공급라인을 연결하는 제1연결라인과 상,하부냉각수회수라인을 연결하는 제2연결라인을 상기 차단밸브의 후방에 설치하며, 상기 제1/제2 연결라인 상에 각각 공급밸브와 회수밸브를 설치하여서 구성된 것을 특징으로 하는 반도체 웨이퍼의 산화막 제거장치.Shut-off valves are installed on the lower cooling water supply line and the lower cooling water recovery line, respectively, and the first connection line connecting the upper and lower cooling water supply lines and the second connection line connecting the upper and lower cooling water recovery lines are blocked. An oxide film removing device of a semiconductor wafer, which is installed at a rear side of a valve, and is provided by providing a supply valve and a recovery valve on the first and second connection lines, respectively. 제1항에 있어서, 상기 하부냉각수공급라인과 하부냉각수회수라인을 연결하는 바이-패스 라인을 설치하고, 그 바이-패스 라인 상에 연결밸브를 설치한 것을 특징으로 하는 반도체 웨이퍼의 산화막 제거장치.2. The oxide film removing apparatus of claim 1, wherein a bypass line connecting the lower cooling water supply line and the lower cooling water recovery line is provided, and a connection valve is provided on the bypass line.
KR1019960062259A 1996-12-06 1996-12-06 Apparatus for removing oxide of semiconductor wafer KR100239710B1 (en)

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