CN117912991A - Temperature control method and system for single wafer cleaning device - Google Patents
Temperature control method and system for single wafer cleaning device Download PDFInfo
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- CN117912991A CN117912991A CN202311716999.5A CN202311716999A CN117912991A CN 117912991 A CN117912991 A CN 117912991A CN 202311716999 A CN202311716999 A CN 202311716999A CN 117912991 A CN117912991 A CN 117912991A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 185
- 238000000034 method Methods 0.000 title claims abstract description 60
- 238000001035 drying Methods 0.000 claims abstract description 56
- 239000007788 liquid Substances 0.000 claims abstract description 50
- 239000007789 gas Substances 0.000 claims description 68
- 239000007921 spray Substances 0.000 claims description 68
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 43
- 239000008367 deionised water Substances 0.000 claims description 20
- 229910021641 deionized water Inorganic materials 0.000 claims description 20
- 238000005507 spraying Methods 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 238000007664 blowing Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000012544 monitoring process Methods 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- 238000005336 cracking Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 123
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 2
- 101000580354 Rhea americana Rheacalcin-2 Proteins 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The application relates to a temperature control method and a temperature control system for a single wafer cleaning process, which are characterized in that when cleaning liquid is switched or the cleaning is finished and drying is to be carried out, the cleaning liquid or the gas with the same temperature as drying air is blown out of the back surface of a wafer. And then, the temperature of the two sides of the wafer is monitored according to the cleaning process, and the temperature of the gas sprayed out of the back of the wafer is finely adjusted and controlled so that the temperature of the two sides of the wafer is kept consistent. By keeping the temperature on both sides of the wafer uniform, cracking of the wafer due to temperature differences can be prevented.
Description
Technical Field
The application belongs to the technical field of wafer cleaning equipment, and particularly relates to a temperature control method and a temperature control system for a single wafer cleaning device.
Background
The single wafer cleaning device is suitable for carrying out wet cleaning, wet etching, developing, photoresist removing, LIFT-OFF and other technological operations on single silicon wafers.
Chinese patent document CN113113328a discloses a single wafer cleaning device cleaning tray structure and a single wafer cleaning device, the single wafer cleaning device cleaning tray structure comprising:
The support disc can rotate and is used for supporting and fixing the wafer, the bottom of the support disc is connected with the rotating shaft, the rotating shaft can rotate, the support disc further rotates, a cavity is formed in the middle of the support disc, a channel is formed in the middle of the rotating shaft, heated nitrogen can be introduced into the channel, a plurality of wafer support columns are arranged on the disc surface of the support disc, through holes are further formed in the disc surface of the support disc, heated nitrogen is sprayed out of the through holes from the channel in the middle of the rotating shaft through the cavity, so that the wafer is heated, and air flow is formed at the bottom of the wafer to prevent cleaning liquid from flowing into the bottom surface of the wafer;
the cleaning fluid spray pipes can rotate to enable the spray nozzles to be positioned above the wafer or above the cleaning fluid spray overflow ports, and the cleaning fluid spray pipes are in parallel;
the clean water spray pipe can rotate to enable the spray nozzle to be positioned above the wafer or above the clean water overflow port, and the clean water spray pipe sprays clean water;
the baffle is arranged on the periphery of the supporting disc, can be lifted or lowered, and is used for blocking cleaning liquid or clear water scattered from the periphery of the wafer when lifted.
However, when the above-mentioned single wafer cleaning device cleans the wafer with the tray structure, the temperature of the top surface of the wafer is different from the temperature of the bottom surface due to the influence of the temperature of the cleaning liquid, and when the temperature difference is too large, the wafer is easily damaged due to the temperature difference stress.
Disclosure of Invention
The invention aims to solve the technical problems that: in order to solve the defects in the prior art, the temperature control method and the system for the single wafer cleaning device are provided for preventing the wafer from being damaged due to different temperatures of two surfaces.
The technical scheme adopted for solving the technical problems is as follows:
A temperature control method for a single wafer cleaning process comprises the following steps:
reading the cleaning temperature of each cleaning liquid in the cleaning process and the drying air temperature during drying;
When cleaning or drying is carried out by using cleaning liquid with different temperatures, gas with the temperature corresponding to the temperature of the cleaning liquid or the temperature of drying wind is sprayed on the back of the wafer so as to heat the back of the wafer;
The temperature of the two sides of the wafer is monitored in real time in the cleaning process, and the temperature of the gas sprayed out of the back of the wafer is controlled so as to keep the temperature of the two sides of the wafer consistent.
Preferably, the temperature control method for the single wafer cleaning process further comprises the steps of judging whether the temperature difference between the two sprayed cleaning solutions with similar time is larger than a first preset value or not, and judging whether the difference between the temperature of the wafer cleaned by the last cleaning solution and the temperature of the drying gas is larger than a second preset value or not;
if the temperature is not greater than the temperature of the cleaning solution or the temperature of the drying air, directly spraying gas with the temperature corresponding to the temperature of the cleaning solution or the temperature of the drying air on the back surface of the wafer;
If the temperature is larger than the preset temperature, the deionized water with the temperature of |T1-T2|/2 is sprayed on the top surface of the wafer, hot air with the temperature of |T1-T2|/2 is sprayed on the bottom of the wafer to heat the bottom of the wafer, and after the temperature of the wafer reaches |T1-T2|/2, the next cleaning liquid cleaning or drying is carried out;
wherein T1 is the temperature of the previous cleaning liquid, and T2 is the temperature of the next cleaning liquid or dry gas.
Preferably, in the temperature control method for the single wafer cleaning process of the present invention, the first preset value and the second preset value are 30 ℃ to 50 ℃.
Preferably, in the temperature control method for the single wafer cleaning process, deionized water with the temperature of |T1-T2|/2 is sprayed on the surface of the wafer in advance, and then gas with the temperature of |T1-T2|/2 is sprayed through the top gas spraying pipe. The reduction by blowing gas is evaporation of water on the wafer surface, thereby reducing the influence on the concentration at the time of subsequent cleaning of the cleaning liquid.
Preferably, in the temperature control method for a single wafer cleaning process of the present invention, the gas for heating the back surface of the wafer is nitrogen.
The invention also provides a temperature control system for the cleaning process of the single wafer, which comprises the following steps:
The cleaning solution spray pipe mechanism comprises a first cleaning solution spray pipe, a second cleaning solution spray pipe and a third cleaning solution spray pipe which are parallel, and the first cleaning solution spray pipe, the second cleaning solution spray pipe and the third cleaning solution spray pipe spray different cleaning solutions respectively;
The supporting disc can rotate and is used for supporting and fixing a wafer and is positioned in the baffle mechanism, the bottom of the supporting disc is connected with the rotating shaft, the rotating shaft is driven by the motor to rotate so as to enable the supporting disc to rotate, a cavity is formed in the middle of the supporting disc, a channel is formed in the middle of the rotating shaft, the channel can be filled with heated gas, a plurality of wafer clamping columns are arranged on the disc surface of the supporting disc, a through hole is formed in the disc surface of the supporting disc, and the heated gas is ejected from the through hole through the cavity from the channel in the middle of the rotating shaft so as to heat the wafer;
The top drying mechanism is arranged above the supporting disc and is used for spraying and drying gas on the wafer;
And the temperature controller is used for controlling the temperature of the gas flowing through the channel, so that when the cleaning liquid spraying pipe mechanism sprays cleaning liquid with different temperatures to clean or the drying mechanism sprays drying gas, the gas with the temperature corresponding to the temperature of the cleaning liquid or the temperature of the drying wind is sprayed on the back of the wafer to heat the back of the wafer, and the temperature controller can also control the temperature of the gas flowing through the channel according to the condition of the temperature of the two sides of the wafer in the process of monitoring the cleaning in real time so as to keep the temperature of the two sides of the wafer consistent.
Preferably, the single wafer cleaning process temperature control system of the present invention,
The temperature controller can also perform the following control: judging whether the temperature difference between the two sprayed cleaning solutions with similar time is larger than a first preset value or not, and judging whether the difference between the temperature of the wafer cleaned by the cleaning solution at the last time and the temperature of the drying gas is larger than a second preset value or not;
if the temperature is not greater than the temperature of the cleaning solution or the temperature of the drying gas is directly sprayed on the back of the wafer;
If the temperature is larger than the preset temperature, the deionized water with the temperature of |T1-T2|/2 is sprayed on the top surface of the wafer, hot air with the temperature of |T1-T2|/2 is sprayed on the bottom of the wafer to heat the bottom of the wafer, and after the temperature of the wafer reaches |T1-T2|/2, the next cleaning liquid cleaning or drying is carried out;
wherein T1 is the temperature of the previous cleaning liquid, and T2 is the temperature of the next cleaning liquid or dry gas.
Preferably, the temperature control system for the single wafer cleaning process of the present invention, wherein the first preset value and the second preset value are 30 ℃ to 50 ℃.
Preferably, the temperature control system for the single wafer cleaning process further comprises a clean water spray pipe, wherein the clean water spray pipe can rotate to enable the spray nozzle to be positioned above the wafer or above the clean water overflow port, and the clean water spray pipe can spray deionized water; when the deionized water with the temperature of |T1-T2|/2 is sprayed on the top surface of the wafer, the gas with the temperature of |T1-T2|/2 is sprayed through a top drying mechanism after the deionized water is sprayed.
Preferably, in the temperature control system for the single wafer cleaning process of the present invention, the gas flowing out of the channel is nitrogen.
The beneficial effects of the invention are as follows:
According to the temperature control method for the single wafer cleaning process, when cleaning liquid is switched or cleaning is finished and drying is to be carried out, the cleaning liquid or the gas with the same temperature as the drying air is blown out of the back surface of the wafer. And then, the temperature of the two sides of the wafer is monitored according to the cleaning process, and the temperature of the gas sprayed out of the back of the wafer is finely adjusted and controlled so that the temperature of the two sides of the wafer is kept consistent. By keeping the temperature on both sides of the wafer uniform, cracking of the wafer due to temperature differences can be prevented.
Drawings
The technical scheme of the application is further described below with reference to the accompanying drawings and examples.
FIG. 1 is a flow chart of a method for controlling temperature during a single wafer cleaning process in accordance with an embodiment of the present application;
FIG. 2 is a flow chart of a method for controlling temperature during a single wafer cleaning process in accordance with an embodiment of the present application;
FIG. 3 is a flow chart of a method for controlling temperature during a single wafer cleaning process in accordance with an embodiment of the present application;
The reference numerals in the figures are:
1. A cleaning liquid spray pipe mechanism;
2. A clear water spray pipe;
3. Having an emergency spout;
4. an emergency nozzle water receiving disc;
5. A support plate;
6. A baffle mechanism;
7. A through hole;
8. Wafer clamping columns;
9. A temperature controller;
11. A first cleaning liquid spray pipe;
12. a second cleaning liquid spray pipe;
13. A third cleaning liquid spray pipe;
51. A channel.
Detailed Description
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the drawings, are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the scope of the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", etc. may explicitly or implicitly include one or more such feature. In the description of the application, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art in a specific case.
The technical scheme of the present application will be described in detail below with reference to the accompanying drawings in combination with embodiments.
Example 1
The embodiment provides a temperature control method for a single wafer cleaning process, as shown in fig. 1, comprising the following steps:
reading the cleaning temperature of each cleaning liquid in the cleaning process and/or the drying air temperature during drying;
When cleaning or drying is carried out by using cleaning liquid with different temperatures, gas with the temperature corresponding to the temperature of the cleaning liquid or the temperature of drying wind is sprayed on the back of the wafer so as to heat the back of the wafer;
The temperature of the two sides of the wafer is monitored in real time in the cleaning process, and the temperature of the gas sprayed out of the back of the wafer is controlled so as to keep the temperature of the two sides of the wafer consistent.
In the temperature control method for the single wafer cleaning process of this embodiment, when the cleaning solution is switched or the cleaning solution is cleaned and dried, the cleaning solution or the gas with the same temperature as the drying air is blown to the back surface of the wafer. And then, the temperature of the two sides of the wafer is monitored according to the cleaning process, and the temperature of the gas sprayed out of the back of the wafer is finely adjusted and controlled so that the temperature of the two sides of the wafer is kept consistent. By keeping the temperature on both sides of the wafer uniform, cracking of the wafer due to temperature differences can be prevented.
Further, the temperature control method for the single wafer cleaning process further comprises the steps of judging whether the temperature difference (|T1-T2|) between two sprayed cleaning solutions (T1 and T2 respectively) with similar time is larger than a first preset value or not, and judging whether the difference (|T1-T2|absolute value) between the temperature of the wafer cleaned by the last cleaning solution and the temperature of the drying gas (T1 and T2 respectively) is larger than a second preset value or not;
if the temperature is not greater than the temperature of the cleaning solution or the temperature of the drying air, directly spraying gas with the temperature corresponding to the temperature of the cleaning solution or the temperature of the drying air on the back surface of the wafer;
If the temperature is larger than the preset temperature, deionized water with the temperature of |T1-T2|/2 is sprayed on the top surface of the wafer, hot air with the temperature of |T1-T2|/2 is sprayed on the bottom of the wafer to heat the bottom of the wafer, and after the temperature of the wafer reaches |T1-T2|/2, the next cleaning liquid cleaning or drying is performed.
Further, the first preset value and the second preset value are 30-50 ℃.
Further, deionized water with the temperature of |T1-T2|/2 is sprayed on the surface of the wafer, and then gas with the temperature of |T1-T2|/2 is sprayed through a top gas spraying pipe. The reduction by blowing gas is evaporation of water on the wafer surface, thereby reducing the influence on the concentration at the time of subsequent cleaning of the cleaning liquid.
Further, the gas that heats the back of the wafer is nitrogen.
Example 2
The present embodiment provides a temperature control system for a wafer cleaning process, as shown in fig. 2, including:
The cleaning solution spray pipe mechanism 1 comprises a first cleaning solution spray pipe 11, a second cleaning solution spray pipe 12 and a third cleaning solution spray pipe 13 which are arranged in parallel, wherein the first cleaning solution spray pipe 11, the second cleaning solution spray pipe 12 and the third cleaning solution spray pipe 13 spray different cleaning solutions respectively;
The supporting disc 5 is rotatable and is used for supporting and fixing a wafer and is positioned in the baffle mechanism 6, the bottom of the supporting disc 5 is connected with a rotating shaft, the rotating shaft is driven by a motor to rotate, the supporting disc 5 is further rotated, a cavity is formed in the middle of the supporting disc 5, a channel 51 is formed in the middle of the rotating shaft, the channel 51 can be filled with heated gas, a plurality of wafer clamping columns 8 are arranged on the disc surface of the supporting disc 5, a through hole 7 is formed in the disc surface of the supporting disc 5, and heated nitrogen is sprayed out of the through hole from the channel in the middle of the rotating shaft through the cavity so as to heat the wafer;
the top drying mechanism is arranged above the supporting disc 5 and is used for spraying and drying gas on the wafer;
The temperature controller 9 is configured to control the temperature of the gas flowing through the channel 51, so that when the cleaning solution spraying mechanism 1 sprays the cleaning solution with different temperatures to clean or the drying mechanism sprays the drying gas, the gas with the temperature corresponding to the temperature of the cleaning solution or the drying air temperature is sprayed onto the back surface of the wafer to heat the back surface of the wafer, and the temperature controller 9 can also control the temperature of the gas flowing through the channel 51 to keep the temperature of the two surfaces of the wafer consistent according to the temperature condition of the two surfaces of the wafer in the process of monitoring the cleaning in real time.
The temperature controller 9 can also perform the following control: judging whether the temperature difference (|T1-T2|) between two sprayed cleaning solutions (T1 and T2 respectively) with similar time is larger than a first preset value or not, and judging whether the difference (|T1-T2|representingthe absolute value of T1-T2) between the temperature of the wafer cleaned by the cleaning solution and the temperature of the drying gas (T1 and T2 respectively) after the last time is larger than a second preset value or not;
If the temperature is not greater than the temperature of the cleaning solution or the temperature (same as the temperature) corresponding to the drying gas is directly sprayed on the back of the wafer;
If the temperature is larger than the preset temperature, deionized water with the temperature of |T1-T2|/2 is sprayed on the top surface of the wafer, hot air with the temperature of |T1-T2|/2 is sprayed on the bottom of the wafer to heat the bottom of the wafer, and after the temperature of the wafer reaches |T1-T2|/2, the next cleaning liquid cleaning or drying is performed.
Further, the first preset value and the second preset value are 30-50 ℃.
Further, the system also comprises a clean water spray pipe 2, the clean water spray pipe 2 can rotate to enable the spray opening to be positioned above the wafer or above the clean water overflow opening, and the clean water spray pipe 2 can spray deionized water; when the deionized water with the temperature of |T1-T2|/2 is sprayed on the top surface of the wafer, the gas with the temperature of |T1-T2|/2 is sprayed through a top drying mechanism after the deionized water is sprayed. The reduction by blowing gas is evaporation of water on the wafer surface, thereby reducing the influence on the concentration at the time of subsequent cleaning of the cleaning liquid.
Further, the gas flowing out of the passage 51 is nitrogen.
The cleaning solution spray pipe mechanism 1 can spray the following cleaning solution: spraying an alkali solution of SC-1 cleaning solution to remove particles and organic substances, spraying SC-2 cleaning solution to remove metal on the surface of the silicon wafer, spraying DHF to remove a natural oxide film on the surface of the wafer, and simultaneously inhibiting the formation of the oxide film to remove metals such as Al, fe, zn, ni on the surface of the silicon, and also removing hydroxide on the natural oxide film. And (3) spraying RCA-2 to remove Na, fe, mg and other metals on the surface of the wafer. Which cleaning liquid is sprayed is determined by the wafer manufacturing process. Deionized water is also one type of cleaning solution.
For example, the process requires that the first cleaning solution spray pipe 11, the second cleaning solution spray pipe 12 and the third cleaning solution spray pipe 13 spray the first cleaning solution with temperature A, the second cleaning solution with temperature B and the third cleaning solution with temperature C respectively, and when the first cleaning solution spray pipe 11 works, the channel 51 sprays the gas with temperature A; when the second cleaning liquid spray pipe 12 works, the channel 51 sprays the gas with the temperature B; when the third cleaning liquid spray pipe 13 is operated, the channel 51 sprays the gas of the temperature C. When the first cleaning liquid spray pipe 11, the second cleaning liquid spray pipe 12 and the third cleaning liquid spray pipe 13 continuously work, the temperature is adjusted according to actual monitoring.
When judging, if the temperature A is 120 ℃ and the temperature B is 60 ℃, if the temperature I A-B I is larger than a first preset value, the deionized water with the temperature of 90 ℃ (I A-B I/2) is sprayed on the top surface of the wafer, and hot air with the temperature of 90 ℃ is sprayed on the bottom of the wafer to heat the bottom of the wafer, so that the temperature of the wafer is gradually increased, and the wafer is not excessively changed at one time.
Also shown in fig. 2 are an emergency spout 3 and an emergency spout drip tray 4.
With the above-described preferred embodiments according to the present application as a teaching, the worker skilled in the art could make various changes and modifications without departing from the scope of the technical idea of the present application. The technical scope of the present application is not limited to the contents of the specification, and must be determined according to the scope of claims.
Claims (10)
1. The temperature control method for the single wafer cleaning process is characterized by comprising the following steps of:
reading the cleaning temperature of each cleaning liquid in the cleaning process and the drying air temperature during drying;
When cleaning or drying is carried out by using cleaning liquid with different temperatures, gas with the temperature corresponding to the temperature of the cleaning liquid or the temperature of drying wind is sprayed on the back of the wafer so as to heat the back of the wafer;
The temperature of the two sides of the wafer is monitored in real time in the cleaning process, and the temperature of the gas sprayed out of the back of the wafer is controlled so as to keep the temperature of the two sides of the wafer consistent.
2. The method according to claim 1, further comprising determining whether a temperature difference between the two ejected cleaning solutions having similar time is greater than a first preset value, and determining whether a difference between a temperature of the wafer after the last cleaning solution cleaning and a temperature of the drying gas is greater than a second preset value;
if the temperature is not greater than the temperature of the cleaning solution or the temperature of the drying air, directly spraying gas with the temperature corresponding to the temperature of the cleaning solution or the temperature of the drying air on the back surface of the wafer;
If the temperature is larger than the preset temperature, the deionized water with the temperature of |T1-T2|/2 is sprayed on the top surface of the wafer, hot air with the temperature of |T1-T2|/2 is sprayed on the bottom of the wafer to heat the bottom of the wafer, and after the temperature of the wafer reaches |T1-T2|/2, the next cleaning liquid cleaning or drying is carried out;
wherein T1 is the temperature of the previous cleaning liquid, and T2 is the temperature of the next cleaning liquid or dry gas.
3. The method of claim 2, wherein the first and second preset values are 30 ℃ to 50 ℃.
4. The method according to claim 1, wherein the deionized water having a temperature of |t1-t2|/2 is sprayed on the wafer surface before the gas having a temperature of |t1-t2|/2 is sprayed through the top gas nozzle. The reduction by blowing gas is evaporation of water on the wafer surface, thereby reducing the influence on the concentration at the time of subsequent cleaning of the cleaning liquid.
5. The method of claim 1, wherein the gas used to heat the backside of the wafer is nitrogen.
6. A single wafer cleaning process temperature control system, comprising:
The cleaning solution spray pipe mechanism (1) comprises a first cleaning solution spray pipe (11), a second cleaning solution spray pipe (12) and a third cleaning solution spray pipe (13) which are arranged in parallel, wherein the first cleaning solution spray pipe (11), the second cleaning solution spray pipe (12) and the third cleaning solution spray pipe (13) spray different cleaning solutions respectively;
The supporting disc (5) can rotate and is used for supporting and fixing a wafer and is positioned in the baffle mechanism (6), the bottom of the supporting disc (5) is connected with a rotating shaft, the rotating shaft is driven by a motor to rotate, the supporting disc (5) is further rotated, a cavity is formed in the middle of the supporting disc (5), a channel (51) is formed in the middle of the rotating shaft, the channel (51) can be filled with heated gas, a plurality of wafer clamping columns (8) are arranged on the disc surface of the supporting disc (5), through holes (7) are further formed in the disc surface of the supporting disc (5), and the heated gas is sprayed out of the through holes from the cavity through the channels in the middle of the rotating shaft so as to heat the wafer;
The top drying mechanism is arranged above the supporting disc (5) and is used for spraying drying gas to the wafer;
And the temperature controller (9) is used for controlling the temperature of the gas flowing through the channel (51), so that when the cleaning liquid spraying pipe mechanism (1) sprays cleaning liquid with different temperatures to clean or the drying mechanism sprays drying gas, the gas with the temperature corresponding to the temperature of the cleaning liquid or the temperature of the drying air is sprayed on the back of the wafer to heat the back of the wafer, and the temperature controller (9) can also control the temperature of the gas flowing through the channel (51) to keep the temperature of the two sides of the wafer consistent according to the temperature condition of the two sides of the wafer in the process of monitoring the cleaning in real time.
7. The wafer cleaning process temperature control system of claim 6, wherein,
The temperature controller (9) is also capable of performing the following control: judging whether the temperature difference between the two sprayed cleaning solutions with similar time is larger than a first preset value or not, and judging whether the difference between the temperature of the wafer cleaned by the cleaning solution at the last time and the temperature of the drying gas is larger than a second preset value or not;
if the temperature is not greater than the temperature of the cleaning solution or the temperature of the drying gas is directly sprayed on the back of the wafer;
If the temperature is larger than the preset temperature, the deionized water with the temperature of |T1-T2|/2 is sprayed on the top surface of the wafer, hot air with the temperature of |T1-T2|/2 is sprayed on the bottom of the wafer to heat the bottom of the wafer, and after the temperature of the wafer reaches |T1-T2|/2, the next cleaning liquid cleaning or drying is carried out;
wherein T1 is the temperature of the previous cleaning liquid, and T2 is the temperature of the next cleaning liquid or dry gas.
8. The single wafer cleaning process temperature control system of claim 7, wherein the first and second preset values are between 30 ℃ and 50 ℃.
9. The single wafer cleaning process temperature control system according to claim 6, further comprising a clean water nozzle (2), the clean water nozzle (2) being rotatable to have a spout located above the wafer or above a clean water overflow port, the clean water nozzle (2) being capable of spraying deionized water; when the deionized water with the temperature of |T1-T2|/2 is sprayed on the top surface of the wafer, the gas with the temperature of |T1-T2|/2 is sprayed through a top drying mechanism after the deionized water is sprayed.
10. The single wafer cleaning process temperature control system of claim 6, wherein the gas flowing out of the channel (51) is nitrogen.
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