KR19980043529A - Semiconductor Chemical Vapor Deposition Equipment - Google Patents

Abstract

The present invention relates to a semiconductor chemical vapor deposition apparatus which eliminates the waiting time for cooling the finished wafer and ensures HSG reproducibility.

The configuration of the present invention comprises a plurality of process chambers 21 and an elevator 23, a load lock chamber 22 provided between the process chamber and the elevator, and a cassette installed in the load lock chamber 22 and placed in an elevator. In the semiconductor chemical vapor deposition apparatus which consists of the robot 24 which takes out a wafer from the wafer, and transfers and conveys it to a process chamber, and the cooling chamber which cools the wafer which has finished the process, the said cooling chamber 25 is carried out by the load lock chamber 22 of the load chamber. It is installed on one side, the cooling chamber (26) having a slot (27) for loading a plurality of wafers in the cooling chamber 25 is installed so as to be transported up and down, and the cooling block (26) It is made by installing a cooling water line 28 for cooling the wafer W around.

Therefore, since the cooling of the wafer proceeds to a batch type, the waiting time for cooling is eliminated, and productivity is improved, and impurities are prevented from entering by using cooling water, thereby ensuring reproducibility when forming HSG.

Description

Semiconductor Chemical Vapor Deposition Equipment

The present invention relates to a semiconductor chemical vapor deposition apparatus, and more particularly to a semiconductor chemical vapor deposition apparatus that eliminates the waiting time for cooling the finished wafer and ensures HSG reproducibility.

In general, semiconductor DRAMs are increasingly integrated and miniaturized, and require high capacitance in a narrow space. In order to increase the capacitance, a method of increasing capacitance using a capacitor and a dielectric in a DRAM has been researched and developed.

A new process called Hemi-Spherical Grain (HSG) has been studied as a method of increasing capacitance by increasing the area of a double capacitor. This is a process of increasing the area of a capacitor by configuring the lower storage node of the capacitor in the DRAM to be convex in a hemispherical shape on a flat surface.

The equipment for forming the HSG can be implemented as a wafer type sheet and a batch type that simultaneously processes a plurality of wafers. When the single type of equipment is configured, the process is somewhat more stable and easier to handle than the batch type, but shows poor performance in terms of productivity. Accordingly, the sheet type equipment is composed of a multi-processing module to improve productivity, and the HSG process requires a cooler module when unloading after wafer processing due to a high temperature process.

Figure 1 shows a chemical vapor deposition apparatus of the sheet type as described above, with a plurality of process chambers 11 for performing a process on one side of the load lock chamber 12, a plurality of An elevator 13 is installed to place a cassette loaded with wafers for performing a process, and a robot 14 provided in the load lock chamber 12 loads the wafer on the elevator 13 into the process chamber 11. And unloading.

In addition, since the HSG is formed at a high temperature, one cooling chamber 15 for cooling the wafer is provided between the load lock chamber 12 and the elevator 13.

However, in the conventional chemical vapor deposition apparatus, since one cooling chamber 15 is installed, when the process is completed in the process chamber 11, the process chamber 11 is first unloaded after unloading the wafer in the cooling chamber 15. Since the wafers in the chambers must be taken out, the wafers in the process chamber 11 must wait in the process chamber 11 even after the HSG process is completed, so that the unloading time is delayed.

In addition, due to the pressure difference between the load lock chamber 12 and the process chamber 11, impurity ions in the load lock chamber 12 are introduced into the process chamber 11 during the wafer transfer in the process chamber 11 to affect HSG formation. As a result, productivity decreases due to lack of HSG reproducibility.

Furthermore, Ar or N ₂ gas used as the cooling gas in the cooling chamber 15 is introduced into the load lock chamber 12 when the cooling chamber 15 is opened, and impurity ions contained therein exist in the load lock chamber 12. In addition to the impurity ions of more impurity ions are introduced into the process chamber 11 has a problem that is difficult to secure the HSG reproducibility.

The present invention is to solve the conventional problems as described above, the purpose is to improve the productivity by configuring the cooling method of the finished wafer in a batch type, using a cooling water as a cooling medium load lock chamber It is to provide a semiconductor chemical vapor deposition apparatus that can secure the HSG reproducibility by preventing impurities from flowing into.

1 is a plan view schematically showing a conventional semiconductor chemical vapor deposition apparatus.

Figure 2 is a plan view schematically showing a chemical vapor deposition apparatus according to the present invention.

Figure 3 is a cross-sectional structural view showing a cooling chamber of the chemical vapor deposition apparatus according to the present invention.

※ Explanation of symbols for main parts of drawing

21: process chamber 22: load lock chamber

23 elevator 24 robot

25: cooling chamber 26: cooling block

27: slot 28: cooling water line

The above object is a plurality of process chambers and elevators, a load lock chamber provided between the process chamber and the elevator, a robot installed in the load lock chamber to take the wafer from the cassette placed in the elevator to transfer and convey to the process chamber; In the semiconductor chemical vapor deposition apparatus comprising a cooling chamber for cooling the wafer after the process, the cooling chamber is provided on one side of the load lock chamber, the cooling chamber is provided with a slot for loading a plurality of wafers It can be achieved by a semiconductor chemical vapor deposition apparatus characterized in that the cooling block is installed so as to be transported up and down, and a cooling water line for cooling the wafer around the cooling block.

At this time, the number of slots of the cooling block is preferably equal to the number of process chambers or at least one more to have a margin.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Figure 2 shows a semiconductor chemical vapor deposition apparatus according to the present invention, the wafer is provided with a plurality of process chambers 21 for performing a process, the process chamber 21 maintains a high vacuum, so the wafer is in a standby state Is transferred to the process chamber 21 in a high vacuum state through the load lock chamber 22.

The load lock chamber 22 is provided with a robot 24 for transferring and conveying wafers. A plurality of elevators 23 are provided outside one side of the load lock chamber 22, and the elevator 23 is provided with a robot 24. A cassette on which a plurality of wafers are loaded is placed.

In addition, one side of the load lock chamber 22 is provided with a cooling chamber 25 of the arrangement type, inside the cooling chamber 25, the cooling block 26 is installed to be movable in the up and down directions, The cooling block 26 is provided with a plurality of slots 27 on which the wafers W can be placed, and cooling water for cooling the wafers W placed in the slots 27 around the cooling block 26. The line 28 is installed.

Preferably, the slots 27 are formed in the same number as the process chamber 21 or one more than the number of the process chambers 21 to have a margin.

According to the present invention having the above configuration, when the process is completed in the process chamber 21, the robot 24 takes out the wafer after the process and inserts the wafer into the slot 27 of the cooling block 26 in the cooling chamber 25. In this case, since four slots 27 are formed, the wafers sequentially processed in three process chambers 21 may be inserted into and loaded in the slots 27 in order while transferring the cooling block 26 up and down.

In addition, since the wafer W in the cooling chamber 25 is sequentially cooled during the next process, when the process of another wafer is finished later, the first loaded wafer is unloaded and the newly completed wafer is empty. Since it is put in (27), it can eliminate the waiting time for cooling.

In addition, since the cooling method of the wafer uses a cooling water, there is no fear that impurities may flow into the load lock chamber, thereby preventing defects due to impurities during the process, thereby ensuring reproducibility when forming HSG.

As described above, according to the semiconductor chemical vapor deposition apparatus according to the present invention, the cooling of the wafer proceeds to a batch type, thereby eliminating the waiting time for cooling, thereby improving productivity, and preventing the inflow of impurities using a cooling water. When HSG is formed, reproducibility is secured.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (2)

A plurality of process chambers and elevators, a load lock chamber provided between the process chambers and the elevator, a robot installed in the load lock chamber to take wafers from the cassette placed in the elevator, and transfer and transfer the wafers to the process chambers, In the semiconductor chemical vapor deposition apparatus composed of a cooling chamber for cooling a wafer, The cooling chamber is installed on one side of the load lock chamber, and a cooling block having a slot for loading a plurality of wafers in the cooling chamber is installed to be transported up and down, and wafers are disposed around the cooling block. A semiconductor chemical vapor deposition apparatus comprising a cooling water line for cooling. The apparatus of claim 1, wherein the slot is formed at least one more than the number of process chambers.