KR100315459B1 - Cooling chamber of rapid thermal processing apparatus with dual process chamber - Google Patents
Cooling chamber of rapid thermal processing apparatus with dual process chamber Download PDFInfo
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- KR100315459B1 KR100315459B1 KR1019990068476A KR19990068476A KR100315459B1 KR 100315459 B1 KR100315459 B1 KR 100315459B1 KR 1019990068476 A KR1019990068476 A KR 1019990068476A KR 19990068476 A KR19990068476 A KR 19990068476A KR 100315459 B1 KR100315459 B1 KR 100315459B1
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- semiconductor wafer
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- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000001816 cooling Methods 0.000 title claims abstract description 41
- 230000009977 dual effect Effects 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 122
- 238000010438 heat treatment Methods 0.000 claims abstract description 41
- 230000003028 elevating effect Effects 0.000 claims description 6
- 238000011112 process operation Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 104
- 150000002500 ions Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
본 발명은 듀얼 공정챔버를 갖는 급속열처리장치에서 급속 열처리가 완료된 반도체 웨이퍼를 냉각시키는 냉각챔버에 관한 것으로, 듀얼 공정챔버에서 열처리 공정이 완료되어 이송장치에 의해 이송된 반도체 웨이퍼를 로딩하는 제1작업대와 냉각이 완료된 반도체 웨이퍼를 이송장치가 집을 수 있도록 소정 높이 상승시키는 제1승강장치로 구성된 제1반도체 웨이퍼 로딩부와, 제1반도체 웨이퍼 로딩부의 직하방에 설치되어 듀얼 공정챔버에서 열처리 공정이 완료되어 이송장치에 의해 이송된 반도체 웨이퍼를 로딩하는 제2작업대와 냉각이 완료된 반도체 웨이퍼를 이송장치가 집을 수 있도록 소정 높이 상승시키는 제2승강장치로 구성된 제2반도체 웨이퍼 로딩부로 구성하여 냉각챔버로 반도체 웨이퍼의 로딩 및 언로딩하기 위한 대기 시간을 줄여 열처리 공정 작업의 생산성을 향상시키는데 있다.The present invention relates to a cooling chamber for cooling a semiconductor wafer having a rapid heat treatment in a rapid heat treatment apparatus having a dual process chamber, the first working table for loading a semiconductor wafer transferred by a transfer apparatus after the heat treatment process is completed in the dual process chamber. And a first semiconductor wafer loading part comprising a first lifting device which raises the cooled semiconductor wafer to a predetermined height so that the transfer device can be picked up, and is installed directly below the first semiconductor wafer loading part, and the heat treatment process is completed in the dual process chamber. A second semiconductor wafer loading portion comprising a second work bench for loading the semiconductor wafer transferred by the transfer device and a second lifting device for raising the cooling device to a predetermined height so that the transfer device can be picked up by the transfer device is configured as a cooling chamber. Reduced waiting time for loading and unloading It is to enhance the productivity of the process operation.
Description
본 발명은 듀얼 공정챔버를 갖는 급속열처리장치의 냉각챔버에 관한 것으로, 특히 듀얼 공정챔버(dual process chamber)를 갖는 급속열처리장치에서 급속 열처리가 완료된 반도체 웨이퍼를 냉각시키는 냉각챔버에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cooling chamber of a rapid heat treatment apparatus having a dual process chamber, and more particularly to a cooling chamber for cooling a semiconductor wafer on which a rapid heat treatment is completed in a rapid heat treatment apparatus having a dual process chamber.
급속열처리장치는 반도에 웨이퍼의 표면에 이온을 주입하거나 확산공정 실시 후에 결정을 재결정화 하기 위해 사용된다. 반도체 웨이퍼에 이온을 주입하는 공정은 반도체 웨이퍼의 표면에 트랜지스터의 활성영역을 형성하거나 반도체 웨이퍼 표면에 형성되는 막질의 전기전도도 등을 개선하기 위해 사용된다.Rapid heat treatment devices are used to inject ions into the surface of the wafer on the peninsula or to recrystallize crystals after the diffusion process. A process of implanting ions into a semiconductor wafer is used to form an active region of a transistor on the surface of a semiconductor wafer or to improve the electrical conductivity of a film formed on the surface of a semiconductor wafer.
첨부된 도면을 이용하여 반도체 웨이퍼에 이온을 주입하는 열처리하는 급속열처리장치의 구성을 설명하면 다음과 같다. 도 1은 듀얼 공정챔버를 갖는 급속열처리장치의 개략적 구성을 나타낸 평면도이다. 도시된 바와 같이, 급속열처리장치(10)는 이송장치(11)와 이송작업 챔버(12)로 크게 구별된다. 이송작업 챔버(12)의 주변에는 복수의 카세트 장착챔버(13), 듀얼 공정챔버(14) 및 냉각챔버(15)가 부가되어 구성된다.Referring to the configuration of the rapid thermal processing apparatus for heat treatment for implanting ions into the semiconductor wafer using the accompanying drawings as follows. 1 is a plan view showing a schematic configuration of a rapid heat treatment apparatus having a dual process chamber. As shown, the rapid heat treatment apparatus 10 is largely divided into a conveying apparatus 11 and a conveying working chamber 12. A plurality of cassette mounting chambers 13, dual process chambers 14, and cooling chambers 15 are added to the periphery of the transfer work chamber 12.
복수의 카세트 장착챔버(13)는 다수의 반도체 웨이퍼(W)가 장착된 카세트(13a)에 장착된다. 카세트(13a)에 장착된 반도체 웨이퍼(W)는 이송장치(11)에 의해 듀얼 공정챔버(14)로 이송된다. 듀얼 공정챔버(14)의 내측에는 반도체 웨이퍼(W)가 로딩(loading)되는 작업대(14a)가 각각 설치된다. 이송장치(11)에 의해듀얼 공정챔버(14)의 작업대(14a)로 이송되어 로딩된 반도체 웨이퍼(W)는 소정 온도에서 열처리된다. 급속 열처리가 완료되면 이송장치(11)에 의해 냉각챔버(15)의 작업대(15a)로 이송되어 로딩된다.The plurality of cassette mounting chambers 13 are mounted in a cassette 13a on which a plurality of semiconductor wafers W are mounted. The semiconductor wafer W mounted on the cassette 13a is transferred to the dual process chamber 14 by the transfer device 11. Inside the dual process chamber 14, work benches 14a on which the semiconductor wafers W are loaded are respectively installed. The semiconductor wafer W transferred and loaded by the transfer device 11 to the work table 14a of the dual process chamber 14 is heat-treated at a predetermined temperature. When the rapid heat treatment is completed is transferred to the work table (15a) of the cooling chamber 15 by the transfer device 11 is loaded.
냉각챔버(15)의 작업대 이송되어 로딩된 반도체 웨이퍼(W)는 냉각챔버(15)에서 상온으로 냉각된다. 반도체 웨이퍼(W)를 냉각시키는 냉각챔버(15)의 구성을 첨부된 도면을 이용하여 설명하면 다음과 같다.The semiconductor wafer W loaded and loaded on the work table of the cooling chamber 15 is cooled to room temperature in the cooling chamber 15. The configuration of the cooling chamber 15 for cooling the semiconductor wafer W will be described with reference to the accompanying drawings.
도 2는 종래의 급속열처리장치의 냉각장치의 구성을 나타낸 사시도이다. 도시된 바와 같이, 냉각챔버(15)는 작업대(15a), 프레임(frame)(15b) 및 승강장치(20)로 구성된다. 승강장치(20)는 다수의 승강핀(pin)(21∼23)과 공기 실린더(24)로 구성된다. 다수의 승강핀(21∼23)은 공기 실린더(24)에 의해 공급되는 공기(AIR)를 배관(25)을 통해 공급받아 상승 동작되도록 구성된다.2 is a perspective view showing the configuration of a conventional cooling device of a rapid heat treatment device. As shown, the cooling chamber 15 is composed of a work table (15a), a frame (15b) and the lifting device 20. The lifting device 20 includes a plurality of lifting pins 21 to 23 and an air cylinder 24. The plurality of lifting pins 21 to 23 are configured to be lifted by receiving air supplied from the air cylinder 24 through the pipe 25.
다수의 승강핀(21∼23)은 공기 실린더(24)에 의해 공급되는 공기(AIR)를 공급받아 상승되어 이송장치(11)가 반도체 웨이퍼(W)를 집을 수 있도록 반도체 웨이퍼(W)를 소정 높이로 상승시키게 된다. 냉각이 완료되어 소정 높이로 상승된 반도체 웨이퍼(W)를 집은 이송장치(11)는 반도체 웨이퍼(W)를 복수의 카세트 장착챔버(13)에 장착된 빈 카세트(13a)에 이송시킨다.The plurality of lifting pins 21 to 23 are lifted by receiving air supplied from the air cylinder 24 to define the semiconductor wafer W so that the transfer device 11 can pick up the semiconductor wafer W. It is raised to height. The transfer apparatus 11 which picks up the semiconductor wafer W raised to the predetermined height after completion of cooling transfers the semiconductor wafer W to the empty cassette 13a mounted in the plurality of cassette mounting chambers 13.
이송장치(11)에 의해 듀얼 공정챔버(14)로 반도체 웨이퍼(W)를 각각 이송하여 로딩한 후 급속열처리공정이 완료된 반도체 웨이퍼(W)를 냉각챔버(15)로 이송시 냉각챔버(15)는 하나의 작업대(15a)로 구성되어 있다. 이로 인해 듀얼 공정챔버(14)에서 공정이 완료된 반도체 웨이퍼(W)를 냉각챔버로 로딩시 지연되어반도체 웨이퍼(W)를 듀얼 공정챔버(14)로 로딩하는 시간보다 공정이 완료된 반도체 웨이퍼(W)를 언로딩하는 시간이 길어지게 된다.After transferring and loading the semiconductor wafers W into the dual process chambers 14 by the transfer device 11, the cooling chambers 15 are transferred to the cooling chambers 15 in which the semiconductor wafers W having the rapid heat treatment process are completed. Is composed of one worktable 15a. As a result, when the semiconductor wafer W, which has been processed in the dual process chamber 14, is delayed when the semiconductor wafer W is loaded into the cooling chamber, the semiconductor wafer W whose process is completed is longer than the time for loading the semiconductor wafer W into the dual process chamber 14. Unloading will take a long time.
반도체 웨이퍼를 로딩하는 시간보다 언로딩 시간이 길어짐과 함께 듀얼 챔버에서 냉각챔버로 로딩하는 시간 또한 길어져 전체적으로 급속열처리 공정 진행 시간이 길어져 급속열처리장치의 생산성이 감소되는 문제점이 있다.The unloading time is longer than the loading time of the semiconductor wafer, and the loading time from the dual chamber to the cooling chamber is also longer, so that the rapid heat treatment process progresses as a whole, thereby reducing productivity of the rapid heat treatment apparatus.
본 발명의 목적은 듀얼 공정챔버를 갖는 급속열처리장치에서 듀얼 공정챔버에서 열처리가 완료된 반도체 웨이퍼를 냉각챔버로 로딩하는 시간과 냉각챔버에서 카세트로 언로딩하기 위한 대기 시간을 줄일 수 있는 냉각챔버를 제공함에 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide a cooling chamber capable of reducing the time for loading a semiconductor wafer heat-treated in a dual process chamber into a cooling chamber and a waiting time for unloading from the cooling chamber to a cassette in a rapid heat treatment apparatus having a dual process chamber. Is in.
본 발명의 다른 목적은 급속 열처리가 완료된 반도체 웨이퍼를 냉각챔버로 로딩하는 시간과 카세트로 언로딩하기 위해 대기하는 시간을 줄임으로써 급속열처리 공정 작업의 생산성을 향상시킴에 있다.Another object of the present invention is to improve the productivity of the rapid heat treatment process by reducing the time for loading the semiconductor wafer after the rapid heat treatment into the cooling chamber and waiting for unloading into the cassette.
도 1은 듀얼 공정챔버를 갖는 급속열처리장치의 개략적 구성을 나타낸 평 면도,1 is a plan view showing a schematic configuration of a rapid heat treatment apparatus having a dual process chamber,
도 2는 종래의 듀얼 공정챔버를 갖는 급속열처리장치의 냉각장치의 구성 을 나타낸 사시도,Figure 2 is a perspective view showing the configuration of a cooling apparatus of a rapid heat treatment apparatus having a conventional dual process chamber,
도 3은 본 발명에 의한 듀얼 공정챔버를 갖는 급속열처리장치의 냉각장치 의 구성을 나타낸 사시도,3 is a perspective view showing the configuration of a cooling apparatus of a rapid heat treatment apparatus having a dual process chamber according to the present invention;
도 4는 도 3에 도시된 제1승강장치와 제2승강장치의 구성을 나타낸 단면 도이다.4 is a cross-sectional view showing the configuration of the first lifting device and the second lifting device shown in FIG.
＊도면의 주요 부분에 대한 부호 설명＊* Explanation of symbols on the main parts of the drawings
10: 급속열처리장치 11: 이송장치10: rapid heat treatment device 11: transfer device
12: 이송작업 챔버 13: 복수의 카세트 장착챔버12: Transfer Working Chamber 13: Multiple Cassette Loading Chamber
14: 듀얼 공정챔버 30: 제1반도체 웨이퍼 로딩부14: dual process chamber 30: the first semiconductor wafer loading portion
31: 제1작업대 32: 제1승강장치31: 1st working platform 32: 1st lifting device
40: 제2반도체 웨이퍼 로딩부 41: 제2작업대40: second semiconductor wafer loading portion 41: the second working table
42: 제2승강장치42: second lifting device
본 발명의 듀얼 공정챔버를 갖는 급속열처리장치의 냉각챔버는 듀얼 공정챔버에서 열처리 공정이 완료되어 이송장치에 의해 이송된 반도체 웨이퍼를 로딩하는 제1작업대와 냉각이 완료된 반도체 웨이퍼를 이송장치가 집을 수 있도록 소정 높이 상승시키는 제1승강장치로 구성된 제1반도체 웨이퍼 로딩부와, 제1반도체 웨이퍼 로딩부의 직하방에 설치되어 듀얼 공정챔버에서 열처리 공정이 완료되어 이송장치에 의해 이송된 반도체 웨이퍼를 로딩하는 제2작업대와 냉각이 완료된 반도체 웨이퍼를 이송장치가 집을 수 있도록 소정 높이 상승시키는 제2승강장치로 구성된 제2반도체 웨이퍼 로딩부로 구성됨을 특징으로 한다.In the cooling chamber of the rapid thermal processing apparatus having the dual process chamber of the present invention, the transfer apparatus can pick up the first workbench for loading the semiconductor wafer transferred by the transfer apparatus after the heat treatment process is completed in the dual process chamber, and the transfer wafer can be cooled. A first semiconductor wafer loading portion including a first lifting device configured to increase a predetermined height so as to be raised up to a predetermined height, and a first semiconductor wafer loading portion installed directly below the first semiconductor wafer loading portion to load the semiconductor wafer transferred by the transfer apparatus after the heat treatment process is completed in the dual process chamber. And a second semiconductor wafer loading unit comprising a second work platform and a second lifting device for raising a predetermined height so that the transfer device can pick up the cooled semiconductor wafer.
제1반도체 웨이퍼 로딩부와 제2반도체 웨이퍼 로딩부는 소정 높이로 이격되어 이송장치가 각각의 제1작업대와 제2작업대로 반도체 웨이퍼를 이송시킬 수 있도록 설치되며, 제1반도체 웨이퍼 로딩부의 제1승강장치와 제2반도체 웨이퍼 로딩부의 제2승강장치는 각각 다수의 제1승강핀 및 제2승강핀과 다수의 제1승강핀 및 제2승강핀을 각각 수직 방향으로 상승/하강시키기 위해 공기의 공급을 개폐하는 제1공기 실린더 및 제2공기 실린더로 구성됨을 특징으로 한다.The first semiconductor wafer loading portion and the second semiconductor wafer loading portion are spaced apart by a predetermined height so that the transfer device can transfer the semiconductor wafers to each of the first work bench and the second work bench, and the first lift of the first semiconductor wafer load section The second lifting device of the device and the second semiconductor wafer loading unit respectively supply air to raise / lower the plurality of first lifting pins and the second lifting pins and the plurality of first lifting pins and the second lifting pins in the vertical direction, respectively. It is characterized by consisting of the first air cylinder and the second air cylinder to open and close.
이하, 본 발명을 첨부된 도면을 이용하여 설명하면 다음과 같다.Hereinafter, the present invention will be described with reference to the accompanying drawings.
도 3은 본 발명에 의한 듀얼 공정챔버를 갖는 급속열처리장치의 냉각장치의 구성을 나타낸 사시도이고, 도 4는 도 3에 도시된 제1승강장치와 제2승강장치의 구성을 나타낸 단면도이다. 도시된 바와 같이, 듀얼 공정챔버(14: 도 1에 도시됨)에서 열처리 공정이 완료되어 이송장치(11: 도 1에 도시됨)에 의해 이송된 반도체 웨이퍼(W)를 로딩하는 제1작업대(31)와 냉각이 완료된 반도체 웨이퍼(W)를 이송장치(11)가 집을 수 있도록 소정 높이 상승시키는 제1승강장치(32)로 구성된 제1반도체 웨이퍼 로딩부(30)와, 제1반도체 웨이퍼 로딩부(30)의 직하방에 설치되어 듀얼 공정챔버(14)에서 열처리 공정이 완료되어 이송장치(11)에 의해 이송된 반도체 웨이퍼(W)를 로딩하는 제2작업대(41)와 냉각이 완료된 반도체 웨이퍼(W)를 이송장치(11)가 집을 수 있도록 소정 높이 상승시키는 제2승강장치(42)로 구성된 제2반도체 웨이퍼 로딩부(40)로 구성된다.Figure 3 is a perspective view showing the configuration of a cooling apparatus of a rapid heat treatment apparatus having a dual process chamber according to the present invention, Figure 4 is a cross-sectional view showing the configuration of the first lifting device and the second lifting device shown in FIG. As shown in the drawing, a first work bench for loading the semiconductor wafer W transferred by the transfer apparatus 11 (shown in FIG. 1) after the heat treatment process is completed in the dual process chamber 14 (shown in FIG. 1) 31) and a first semiconductor wafer loading section 30 composed of a first elevating device 32 which raises a predetermined height so that the transfer device 11 can pick up the cooled semiconductor wafer W, and the first semiconductor wafer loading. The second work table 41 installed below the unit 30 and the heat treatment process is completed in the dual process chamber 14 to load the semiconductor wafer W transferred by the transfer device 11 and the semiconductor is cooled. A second semiconductor wafer loading portion 40 composed of a second lifting device 42 for raising the wafer W to a predetermined height so that the transfer device 11 can be picked up.
이하, 본 발명의 구성 및 작용을 보다 상세히 설명하면 다음과 같다.Hereinafter, the configuration and operation of the present invention in more detail as follows.
본 발명의 냉각챔버는 제1반도체 웨이퍼 로딩부(30)와 제2반도체 웨이퍼 로딩부(40)로 구성된다. 제2반도체 웨이퍼 로딩부(40)는 제1반도체 웨이퍼 로딩부(30)의 직하방에 소정 거리(M)로 이격되어 이송장치(11)가 반도체 웨이퍼(W)를 각각의 제1작업대(31)와 제2작업대(41)로 이송시킬 수 있도록 설치된다.The cooling chamber of the present invention includes a first semiconductor wafer loading portion 30 and a second semiconductor wafer loading portion 40. The second semiconductor wafer loading portion 40 is spaced apart from the first semiconductor wafer loading portion 30 by a predetermined distance M so that the transfer device 11 moves the semiconductor wafer W to each first work platform 31. ) And the second worktable 41 is installed to be transported.
제1반도체 웨이퍼 로딩부(30)는 듀얼 공정챔버(14)에서 열처리 공정이 완료되어 이송장치(11)에 의해 이송된 반도체 웨이퍼(W)를 로딩하는 제1작업대(31)가 상측에 설치되며, 제1작업대(31)의 하측에는 냉각이 완료된 반도체 웨이퍼(W)를 이송장치(11)가 집을 수 있도록 소정 높이 상승시키는 제1승강장치(32)로 구성된다. 제1승강장치(32)는 반도체 웨이퍼(W)를 수직으로 상승/하강시키는 다수의 제1승강핀(32b)이 설치되며 다수의 제1승강핀(32b)은 제1공기 실린더(32a)로 연결 접속 설치된다.The first semiconductor wafer loading unit 30 has a first working table 31 for loading the semiconductor wafer W transferred by the transfer apparatus 11 after the heat treatment process is completed in the dual process chamber 14. The lower side of the first work bench 31 is configured as a first elevating device 32 which raises a predetermined height so that the transfer device 11 can pick up the cooled semiconductor wafer W. The first elevating device 32 is provided with a plurality of first lifting pins 32b for vertically raising / lowering the semiconductor wafer W. The plurality of first lifting pins 32b are connected to the first air cylinder 32a. Connection is installed.
제2반도체 웨이퍼 로딩부(40)는 듀얼 공정챔버(14)에서 열처리 공정이 완료되어 이송장치(11)에 의해 이송된 반도체 웨이퍼(W)를 로딩하는 제2작업대(41)가 상측에 설치되며, 제2작업대(41)의 하측에는 냉각이 완료된 반도체 웨이퍼(W)를 이송장치(11)가 집을 수 있도록 소정 높이 상승시키는 제1승강장치(42)로 구성된다. 제1승강장치(42)는 반도체 웨이퍼(W)를 수직으로 상승/하강시키는 다수의 제2승강핀(42b)이 설치되며 다수의 제2승강핀(42b)은 제2공기 실린더(42a)로 연결 접속 설치된다.The second semiconductor wafer loading unit 40 has a second working table 41 for loading the semiconductor wafer W transferred by the transfer device 11 after the heat treatment process is completed in the dual process chamber 14. The lower part of the 2nd work bench 41 is comprised by the 1st lifting device 42 which raises the semiconductor wafer W which completed cooling, the predetermined height so that the conveying apparatus 11 may pick up. The first lifting device 42 is provided with a plurality of second lifting pins 42b for vertically raising / lowering the semiconductor wafer W, and the plurality of second lifting pins 42b are connected to the second air cylinder 42a. Connection is installed.
전술한 구성을 갖는 본 발명의 냉각챔버의 작용을 상세히 설명하면 다음과 같다.Referring to the operation of the cooling chamber of the present invention having the above-described configuration in detail as follows.
복수의 카세트 장착챔버(13)에 다수의 반도체 웨이퍼(W)가 장착된 카세트(13a)에 장착되면 이송장치(11)에 의해 듀얼 공정챔버(14)로 반도체 웨이퍼(W)를 이송한다. 반도체 웨이퍼(W)가 듀얼 공정챔버(14)로 각각 이송이 완료되면 약 1000℃에서 반도체 웨이퍼(W)를 열처리한다. 열처리가 완료된 반도체 웨이퍼(W)는 이송장치(11)에 의해 냉각챔버의 제1반도체 웨이퍼 로딩부(30)로 이송된다.When the plurality of cassette mounting chambers 13 are mounted on the cassettes 13a on which the plurality of semiconductor wafers W are mounted, the semiconductor wafers W are transferred to the dual process chamber 14 by the transfer device 11. When the transfer of the semiconductor wafers W to the dual process chambers 14 is completed, the semiconductor wafers W are heat-treated at about 1000 ° C. The semiconductor wafer W after the heat treatment is completed is transferred to the first semiconductor wafer loading portion 30 of the cooling chamber by the transfer device 11.
제1반도체 웨이퍼 로딩부(30)에 열처리가 완료된 반도체 웨이퍼(W)가 로딩되면 이송장치(11)는 복수의 카세트 장착챔버(13: 도 1에 도시됨)에서 새로운 반도체 웨이퍼(W)를 듀얼 공정챔버(14)로 이송시킨다. 새로운 반도체 웨이퍼(W)의 이송이 완료된 상태에서 이전에 듀얼 공정챔버(14)에 장착된 반도체 웨이퍼(W)를 제2반도체 웨이퍼 로딩부(40)로 이송한다.When the semiconductor wafer W, which has been heat-treated, is loaded on the first semiconductor wafer loading unit 30, the transfer apparatus 11 may dualize the new semiconductor wafer W in the plurality of cassette mounting chambers 13 (shown in FIG. 1). Transfer to process chamber 14. In the state where the transfer of the new semiconductor wafer W is completed, the semiconductor wafer W previously mounted in the dual process chamber 14 is transferred to the second semiconductor wafer loading unit 40.
제2반도체 웨이퍼 로딩부(40)에 반도체 웨이퍼(W)가 로딩되면 제1반도체 웨이퍼 로딩부(30)에서 냉각이 완료된 반도체 웨이퍼(W)를 복수의 카세트 장착챔버(13)의 빈 카세트(13a)로 이송시켜 언로딩한다. 전술한 과정을 연속적으로 실행하여 제1반도체 웨이퍼 로딩부(30) 및 제2반도체 웨이퍼 로딩부(40)로 로딩된 반도체 웨이퍼(W)를 언로딩하기 위한 동작을 설명하면 다음과 같다.When the semiconductor wafer W is loaded on the second semiconductor wafer loading unit 40, the empty wafer 13a of the plurality of cassette mounting chambers 13 is loaded with the semiconductor wafers W that have been cooled by the first semiconductor wafer loading unit 30. To unload. An operation for unloading the semiconductor wafer W loaded into the first semiconductor wafer loading unit 30 and the second semiconductor wafer loading unit 40 by continuously executing the above process will be described below.
열처리가 완료된 반도체 웨이퍼(W)는 제1반도체 웨이퍼 로딩부(30)의 제1작업대(31)에 로딩된다. 제1작업대(31)에 로딩이 완료된 반도체 웨이퍼(W)를 소정 시간 냉각시키고 냉각 작업이 완료되면 이송장치(11)에 의해 복수의 카세트 장착챔버(13)에 장착된 빈 카세트(13a)에 언로딩하게 된다. 이송장치(11)가 반도체웨이퍼(W)를 집을 수 있도록 제1작업대(31)에 장착된 반도체 웨이퍼(W)를 소정 높이로 상승시킨다. 이를 위해 제1승강장치(32)가 사용된다.The semiconductor wafer W after the heat treatment is completed is loaded on the first work bench 31 of the first semiconductor wafer loading unit 30. The semiconductor wafer W loaded on the first work bench 31 is cooled for a predetermined time, and when the cooling operation is completed, the semiconductor wafer W is unloaded to the empty cassette 13a mounted on the plurality of cassette mounting chambers 13 by the transfer device 11. Will load. The semiconductor wafer W mounted on the first work bench 31 is raised to a predetermined height so that the transfer device 11 can pick up the semiconductor wafer W. For this purpose, the first elevating device 32 is used.
제1승강장치(32)는 제1작업대(31)에 로딩된 반도체 웨이퍼(W)를 소정 높이로 상승시키기 위해 다수의 제1승강핀(32b)을 구동시킨다. 다수의 제1승강핀(32b)은 공기관(32c)을 통해 접속 연결된 공기 실린더(32a)를 통해 외부에서 공기(AIR)를 공급받아 구동된다. 공기 실린더(32a)는 다수의 제1승강핀(32b)을 상승시키기 위해 다수의 제1승강핀(32b)으로 공기(AIR)를 주입한다. 공기(AIR)가 주입되면 다수의 제1승강핀(32b)이 소정 높이로 수직 상승하여 반도체 웨이퍼(W)를 소정 높이로 상승시킨다.The first lifting device 32 drives the plurality of first lifting pins 32b to raise the semiconductor wafer W loaded on the first work platform 31 to a predetermined height. The plurality of first lifting pins 32b are driven by receiving air from the outside through an air cylinder 32a connected through the air pipe 32c. The air cylinder 32a injects air AIR into the plurality of first lifting pins 32b to raise the plurality of first lifting pins 32b. When air is injected, the plurality of first lifting pins 32b are vertically raised to a predetermined height to raise the semiconductor wafer W to a predetermined height.
반도체 웨이퍼(W)가 소정 높이로 상승되면 이송장치(11)는 반도체 웨이퍼(W)를 집어 복수의 카세트 장착챔버(13)의 빈 카세트(13a)에 언로딩시키게 된다. 반도체 웨이퍼(W)를 언로딩시키기 위한 제2반도체 웨이퍼 로딩부(40)는 공기 실린더(42a), 다수의 제2승강핀(42b) 및 배관(42c)으로 구성되어 제1반도체 웨이퍼 로딩부(30)와 동일한 동작을 통해 반도체 웨이퍼(W)를 이송장치(11)가 집을 수 있도록 동작한다.When the semiconductor wafer W is raised to a predetermined height, the transfer device 11 picks up the semiconductor wafer W and unloads the empty cassette 13a of the plurality of cassette mounting chambers 13. The second semiconductor wafer loading portion 40 for unloading the semiconductor wafer W is composed of an air cylinder 42a, a plurality of second lifting pins 42b, and a pipe 42c, so that the first semiconductor wafer loading portion ( Through the same operation as 30, the transfer device 11 is operated to pick up the semiconductor wafer W.
전술한 과정의 반복을 통해 듀얼 복수의 카세트 장착챔버(13), 듀얼 공정챔버(14), 제1반도체 웨이퍼 로딩부(30) 및 제2반도체 웨이퍼 로딩부(40) 순서로 반도체 웨이퍼(W)를 이송하여 로딩시키고 다시 제1반도체 웨이퍼 로딩부(30) 및 제2반도체 웨이퍼 로딩부(40)에서 복수의 카세트 장착챔버(13)로 반도체 웨이퍼(W)를 언로딩시킴으로써 전체적으로 반도체 웨이퍼(W)의 이송 작업시 대기 시간을 줄여열처리 작업성을 향상시킬 수 있게 된다.By repeating the above-described process, the semiconductor wafer W in the order of the dual plurality of cassette mounting chambers 13, the dual process chambers 14, the first semiconductor wafer loading unit 30, and the second semiconductor wafer loading unit 40. The semiconductor wafer W as a whole by unloading the semiconductor wafer W from the first semiconductor wafer loading section 30 and the second semiconductor wafer loading section 40 to the plurality of cassette mounting chambers 13. It is possible to improve the heat treatment workability by reducing the waiting time during the transfer operation.
이상에서 설명한 바와 같이 본 발명은 냉각챔버에서 복수의 반도체 웨이퍼 로딩부를 설치하여 냉각챔버로 반도체 웨이퍼를 로딩하는 시간 및 언로딩 하는 시간을 줄임으로써 반도체 웨이퍼의 이송 대기 시간을 제거하여 열처리 공정 작업의 생산성을 향상시키는 효과를 제공한다.As described above, the present invention eliminates the transfer waiting time of the semiconductor wafer by reducing the time for loading and unloading the semiconductor wafer into the cooling chamber by installing a plurality of semiconductor wafer loading units in the cooling chamber, thereby improving productivity of the heat treatment process. To improve the effect.
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| JPH09283589A (en) * | 1996-04-08 | 1997-10-31 | Hitachi Ltd | Method and apparatus for processing substrate |
| KR19980043529A (en) * | 1996-12-03 | 1998-09-05 | 김광호 | Semiconductor Chemical Vapor Deposition Equipment |
| EP0935279A2 (en) * | 1998-02-09 | 1999-08-11 | Asm Japan K.K. | Device and method for load locking for semiconductuctor processing |
| JPH11233588A (en) * | 1998-02-09 | 1999-08-27 | Mc Electronics Kk | Wafer conveyor and wafer conveying method |
-
1999
- 1999-12-31 KR KR1019990068476A patent/KR100315459B1/en not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09148417A (en) * | 1995-11-24 | 1997-06-06 | Dainippon Screen Mfg Co Ltd | Heat-treating device for substrate |
| JPH09283589A (en) * | 1996-04-08 | 1997-10-31 | Hitachi Ltd | Method and apparatus for processing substrate |
| KR19980043529A (en) * | 1996-12-03 | 1998-09-05 | 김광호 | Semiconductor Chemical Vapor Deposition Equipment |
| EP0935279A2 (en) * | 1998-02-09 | 1999-08-11 | Asm Japan K.K. | Device and method for load locking for semiconductuctor processing |
| JPH11233588A (en) * | 1998-02-09 | 1999-08-27 | Mc Electronics Kk | Wafer conveyor and wafer conveying method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010087467A (en) | 2001-09-21 |
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