KR19980030949A - Manufacturing Method of Semiconductor Device - Google Patents

Abstract

A method for manufacturing a semiconductor device capable of reducing contact resistance.

The present invention provides a method for forming a titanium film on a wafer in a first sputtering apparatus provided with a collimator, forming a titanium nitride film on a wafer in the first sputtering apparatus, and a second stutter without a collimator installed therein. And performing a stuffing process on the wafer on which the titanium nitride film is formed in the facility.

Therefore, the process time required can be reduced, and the contact resistance can be reduced.

Description

Manufacturing Method of Semiconductor Device

The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing a semiconductor device capable of reducing a contact resistance.

In recent years, with the high integration of semiconductor devices, the design rules of semiconductor devices such as transistors have become smaller.

In particular, the aspect ratio of the metal contact is getting higher in a 64 mega or more semiconductor device.

Therefore, instead of forming a contact on a wafer on which a substructure such as a gate electrode, S-poly, P-poly, and BPSG (Borophosphorsilicate Glass) is formed for a subsequent wiring process, and applying a metal component such as aluminum, A contact is formed on the formed wafer, and a titanium (Ti) film and a titanium nitride (TiN) film are sequentially formed and a metal component such as aluminum is coated.

1 is a schematic configuration diagram of a sputter chamber for explaining a method of manufacturing a semiconductor device.

Referring to FIG. 1, after placing a wafer 14 on a stage 12 in a vacuum sputter chamber 10, sputters argon and nitrogen gas supplied from an argon and nitrogen gas supply source 20. The chamber 12 is supplied to the chamber 12, and a high frequency (Radio Frequency) is supplied from the power supply source 24 into the sputter chamber 10.

The argon gas supplied to the sputter chamber 10 is accelerated to collide with the target 18, and thus the component particles constituting the target 18 are protruded.

The target material protruding from the target 18 passes through the collimator 16 and the straightness is lowered to be deposited on the wafer 14 positioned on the stage 12 to form a titanium film.

It takes about 10 seconds to form the titanium film.

Subsequently, in the state where the collimator 16 is removed in the sputter chamber 10, oxygen gas supplied from the oxygen source 22 is supplied into the sputter chamber 10 to form a thin oxide film on the wafer 14. The next stuffing process is performed.

The first stuffing process takes about 30 seconds.

Subsequently, argon gas and nitrogen gas are supplied into the sputter chamber 10 in which the collimator 16 is installed to form a titanium nitride film on the wafer 14.

The titanium nitride film forming process takes about 60 seconds.

Subsequently, a second stuffing process is performed in which the oxygen gas supplied from the oxygen gas supply source 22 is supplied into the sputter chamber 10 from which the collimator 16 has been removed to form a thin oxide film on the wafer 14.

The second stuffing process takes about 60 seconds.

However, there is a problem in that the process takes a long time as the titanium film and the titanium nitride film forming process and the stuffing process are performed in one sputter chamber.

In addition, after the titanium film is formed, there is a problem that the contact resistance increases due to the first stuffing process.

It is an object of the present invention to provide a method for manufacturing a semiconductor device which can shorten the process time.

Another object of the present invention is to provide a semiconductor device manufacturing method capable of reducing contact resistance.

1 is a schematic configuration diagram of a sputter chamber for explaining a method of manufacturing a semiconductor device.

※ Explanation of symbols for main parts of drawing

10: sputter chamber 12: stage

14 wafer 16 collimator

18 target 20: argon and nitrogen source

22: oxygen source 24: power supply

In the semiconductor device manufacturing method according to the present invention for achieving the above object, the step of forming a titanium film on the wafer inside the first sputtering equipment having a collimator, forming a titanium nitride film on the wafer inside the first sputtering equipment And a step of performing a stuffing process on the wafer on which the titanium nitride film is formed in a second stuttering facility in which a collimator is not installed.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Referring to FIG. 1, a method of manufacturing a semiconductor device according to the present invention will be described. After arranging a wafer 14 on an upper stage 12 in a vacuum sputter chamber 10, an argon and nitrogen gas supply source 20 is provided. Argon and nitrogen gas supplied from the supply to the sputter chamber 12, and a high frequency from the power supply source 24 to supply the inside of the sputter chamber (10).

The argon gas supplied to the sputter chamber 10 is accelerated to collide with the target 18, and thus the component particles constituting the target 18 are protruded.

The target material protruding from the target 18 passes through the collimator 16 and the straightness is lowered to be deposited on the wafer 14 positioned on the stage 12 to form a titanium film.

It takes about 10 seconds to form the titanium film.

Subsequently, argon gas and nitrogen gas are supplied into the sputter chamber 10 so that a titanium nitride film is formed on the wafer 14.

The titanium nitride film forming process takes about 60 seconds.

Subsequently, the wafer on which the titanium nitride film is formed is transferred to another sputter chamber in which the collimator is not provided.

Subsequently, a stuffing process is performed in which the oxygen gas supplied from the oxygen gas supply source 22 is supplied into the sputter chamber 10 to form a thin oxide film on the wafer 14.

The stuffing process takes about 60 seconds.

Therefore, according to the present invention, a process of forming a titanium film and a titanium nitride film and a stuffing process are performed separately using a sputter chamber forming the titanium film and the titanium nitride film and another sputter chamber in which the stuffing process is performed. By omitting the first stuffing process, there is an effect that can reduce the process time.

In addition, it is possible to reduce the contact resistance by omitting the conventional primary stuffing process.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (1)

Forming a titanium film on the wafer in a first sputtering apparatus provided with a collimator; Forming a titanium nitride film on a wafer in the first sputtering facility; And Performing a stuffing process on the wafer on which the titanium nitride film is formed in a second stuttering facility in which a collimator is not installed; A method of manufacturing a semiconductor device comprising a.