KR19980029069A - Electrospinning material composition of cathode for cathode ray tube - Google Patents
Electrospinning material composition of cathode for cathode ray tube Download PDFInfo
- Publication number
- KR19980029069A KR19980029069A KR1019960048310A KR19960048310A KR19980029069A KR 19980029069 A KR19980029069 A KR 19980029069A KR 1019960048310 A KR1019960048310 A KR 1019960048310A KR 19960048310 A KR19960048310 A KR 19960048310A KR 19980029069 A KR19980029069 A KR 19980029069A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide
- metal
- cathode
- electron
- ray tube
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/14—Solid thermionic cathodes characterised by the material
- H01J1/142—Solid thermionic cathodes characterised by the material with alkaline-earth metal oxides, or such oxides used in conjunction with reducing agents, as an emissive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/20—Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
- H01J1/26—Supports for the emissive material
Landscapes
- Solid Thermionic Cathode (AREA)
Abstract
본 발명은 음극선관용 음극의 전자방사물질 조성물에 관한 것으로, 특히 전자 방사물질을 상층과 하층으로 구성함으로써 음극구조체의 성능을 향상시키고자 하는 것으로서, 이러한 본 발명은 전자방사물질이 기체금속으로부터 탈락하는 것을 방지하도록 산화바륨(BaO)이 포함된 알칼리토류금속복합산화물을 구비한 하층이 기체금속의 상단면에 도포되고, 고음극전류밀도가 가능하도록 산화바륨이 포함된 알칼리토류금속복합산화물에 활성화금속과 분해금속산화물이 함유된 상층이 하층의 상단면에 도포된 것이다.The present invention relates to an electrospinning material composition of a cathode for a cathode ray tube, in particular to improve the performance of the cathode structure by configuring the electron emitting material in the upper layer and the lower layer, the present invention is that the electron-emitting material is eliminated from the base metal The lower layer containing the alkaline earth metal composite oxide containing barium oxide (BaO) is applied to the upper surface of the base metal to prevent the metal oxide from being activated, and the activated metal is added to the alkaline earth metal composite oxide containing the barium oxide to enable high cathode current density. The upper layer containing superdecomposed metal oxide is applied to the upper surface of the lower layer.
Description
본 발명은 음극선관에 관한 것으로서, 특히 전자방사물질을 상층과 하층으로 구성함으로써 음극구조체의 성능을 향상시키도록 한 음극선관용 음극의 전자방사물질 조성물에 관한 것이다.The present invention relates to a cathode ray tube, and more particularly to an electron radiation substance composition of a cathode for a cathode ray tube to improve the performance of the cathode structure by configuring the electron emitting material in the upper and lower layers.
종래 음극선관용 음극구조체는 제 1도와 같이 음극 가열용 히터(1)가 삽입설치된 원통형의 슬리이브(2)와, 상기 슬리이브(2) 상부에 마그네슘(Mg), 실리콘(Si)등의 활성화금속이 미량함유되어 형성된 기체금속(3)과, 상기 기체금속(3)의 상단면에 적어도 산화바륨(BaO)이 포함된 알칼리토류금속복합산화물에 산화스칸드늄(Sc2O3)등과 같은 희토류금속산화물의 분해금속산화물이 함유되어 도포된 전자방사물질(4)로 구성하였다.Conventional cathode structure for cathode ray tube is a cylindrical sleeve (2) in which the cathode heating heater (1) is installed as shown in Figure 1, and activated metal such as magnesium (Mg), silicon (Si) on the sleeve (2) A rare earth metal such as a scantium oxide (Sc 2 O 3 ) or the like on a base metal (3) formed in such a small amount and an alkaline earth metal composite oxide containing at least barium oxide (BaO) on the upper surface of the base metal ( 3 ). It consists of an electrospinning material (4) coated with an oxide metal oxide of an oxide.
이와 같이 구성된 종래 음극선관용 음극구조체의 슬리이브(2)내에 형성된 히터(1)에 전력이 가해지면 히터(1)가 발열하고, 상기 발열된 히터(1)의 열은 기체금속(3)을 가열하게 되며, 상기 기체금속(3)의 열로 인해 기체금속(3)과 기체금속(3) 상단면에 도포된 전자방사물질(4)이 화학반응하게 되고, 상기 화학반응을 통해 전자가 생성된다.When electric power is applied to the heater 1 formed in the sleeve 2 of the conventional cathode ray tube cathode structure configured as described above, the heater 1 generates heat, and the heat of the heated heater 1 heats the base metal 3. Due to the heat of the base metal 3, the base metal 3 and the electron emitting material 4 coated on the top surface of the base metal 3 are chemically reacted, and electrons are generated through the chemical reaction.
상기 기체금속(3)과 전자방사물질(4)의 화학반응은 다음과 같다.The chemical reaction of the gas metal 3 and the electron emitting material 4 is as follows.
4BaO + Si(기체금속중) = 2Ba + Ba2SiO4(반응물질)4BaO + Si (in gaseous metal) = 2Ba + Ba 2 SiO 4 (reactant)
BaO + Mg(기체금속중) = Ba + MgO(반응물질)BaO + Mg (in gas metal) = Ba + MgO (reactant)
Ba = Ba2++ 2e-(전자생성)Ba = Ba 2+ + 2e - (E generated)
Sc2O3(분해금속산화물) + 3Mg = 2Sc + 3MgOSc 2 O 3 (Decomposed metal oxides) + 3Mg = 2Sc + 3MgO
3Ba2SiO4(반응물질) + 8Sc = 6Ba + 3Si + 4Sc2O3(반응물질분해)3Ba 2 SiO 4 (reactant) + 8Sc = 6Ba + 3Si + 4Sc 2 O 3 (reactant decomposition)
Ba = Ba2++ 2e-(전자생성)Ba = Ba 2+ + 2e - (E generated)
상기와 같은 분산형 음극의 화학반응은 기체금속(3)내에서 다량의 바륨이 검출됨으로써 확인되고 있으며 고음극전류밀도가 가능한 것은 기체금속(3)간의 화학반응에 의한 반응물질로 생성된 바륨실리콘산화물이 산화스칸드늄에 의해 분해되기 때문이다.The chemical reaction of the dispersing cathode as described above is confirmed by the detection of a large amount of barium in the gas metal (3), the high cathode current density is possible barium silicon produced as a reaction material by the chemical reaction between the gas metal (3) This is because the oxide is decomposed by scannium.
그러나 이러한 종래 음극선관용 음극구조체의 전자방사물질과 기체금속간의 화학반응에 의해 생성된 반응물질이 산화스칸드늄에 의해 분해되므로 전자방사물질은 기체금속과 강하게 결합되지 못하고 기체금속표면으로부터 탈락되는 문제점이 있었다.However, since the reactant produced by the chemical reaction between the electron-emitting material and the gas metal of the cathode structure for the conventional cathode ray tube is decomposed by the scandnium oxide, the electron-emitting material is not strongly bound to the gas metal and is removed from the gas metal surface. there was.
이와같은 분산형 음극의 결점을 해결하기위해 기체금속상면에 접하여 산화바륨등과 같은 알칼리토류금속복합산화물의 전자방사물질을 도포하고 그 상면에 산화스칸드늄과 같은 희토금속산화물질을 구비한 분산형 음극이 제안되었으나 음극전류밀도가 상기의 단층 전자방사물질층을 구비한 분산형 음극의 음극전류밀도에 미치지 못하는 문제점이 있었다.In order to solve this drawback of the dispersing cathode, a dispersing type is provided with an electron-emitting material of alkaline earth metal complex oxide, such as barium oxide, in contact with the upper surface of the gas metal, and a rare earth metal oxide such as scannium. Although the negative electrode has been proposed, there is a problem that the negative electrode current density does not reach the negative electrode current density of the dispersion type negative electrode having the single layer electron emission material layer.
본 발명은 이러한 점을 감안하여 적어도 산화바륨(BaO)이 포함된 알칼리토류금속복합산화물로 구성된 전자방사물질의 하층을 기체금속의 상단면에 도포하고, 적어도 산화바륨(BaO)이 포함된 알칼리토류금속복합산화물에 활성화금속과 분해금속산화물이 함유된 전자방사물질의 상층을 상기 전자방사물질의 하층 상단면에 도포함으로써, 전자방사물질이 기체금속으로부터 탈락되는 것을 방지하며, 고음극전류밀도를 가능하게하여 음극구조체의 성능을 향상시키는 데 그 목적이 있다.In view of this, the present invention applies a lower layer of an electron-emitting material composed of an alkaline earth metal complex oxide containing at least barium oxide (BaO) to the upper surface of the base metal, and at least alkaline earth containing barium oxide (BaO). By applying the upper layer of the electron-emitting material containing the active metal and the decomposition metal oxide in the metal complex oxide on the upper surface of the lower layer of the electron-emitting material, the electron-emitting material can be prevented from falling off from the base metal and high cathode current density is possible. The purpose is to improve the performance of the cathode structure.
제 1도는 종래 음극선관용 음극구조체의 단면도.1 is a cross-sectional view of a cathode structure for a conventional cathode ray tube.
제 2도는 본 발명 음극선관용 음극구조체의 단면도.2 is a cross-sectional view of the cathode structure for the cathode ray tube of the present invention.
* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings
101 : 히터, 102 : 슬리이브, 103 : 기체금속, 104 : 전자방사물질, 104a : 상층, 104b : 하층101: heater, 102: sleeve, 103: gas metal, 104: electron-emitting material, 104a: upper layer, 104b: lower layer
이하, 본 발명을 첨부한 도면에 의거하여 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
제 2도는 본 발명에 의한 음극선관용 음극구조체의 구성도를 나타낸 것으로서, 음극 가열용 히터(101)가 삽입설치된 원통형의 슬리이브(102)와, 상기 슬리이브(102)상부에 마그네슘(Mg), 실리콘(Si)등의 활성화금속이 미량함유되어 형성된 기체금속(103)과, 상기 기체금속(103)의 상단면에 도포된 전자방사물질(104)로 구성된다.2 is a view illustrating a structure of a cathode structure for a cathode ray tube according to the present invention, and includes a cylindrical sleeve 102 in which a cathode heating heater 101 is inserted, magnesium (Mg), and an upper portion of the sleeve 102. It is composed of a base metal 103 formed by containing a small amount of activated metal such as silicon (Si), and an electron-emitting material 104 coated on the upper surface of the base metal 103.
그리고 상기 전자방사물질(104)은 적어도 산화바륨(BaO)이 포함된 알칼리토류금속복합산화물로 구성되어 기체금속(103)의 상단면에 도포된 하층(104b)과, 상기 하층 (104b)의 상단면에 적어도 산화바륨이 포함된 알칼린토류금속복합산화물에 활성화금속과 분해금속산화물이 함유되어 도포된 상층(104a)으로 구성된다.In addition, the electron-emitting material 104 is composed of an alkaline earth metal complex oxide containing at least barium oxide (BaO), the lower layer 104b applied to the upper surface of the base metal 103, and the upper layer of the lower layer 104b. An alkaline earth metal composite oxide containing at least barium oxide on its surface is composed of an upper layer 104a coated with an active metal and a decomposition metal oxide.
상기 산화바륨이 포함된 알칼리토류금속복합산화물은 산화바륨, 산화스트론늄(SrO), 산화칼슘(CaO)등이며, 상기 전자방사물질상층(104a)의 활성화금속으로는 마그네슘, 실리콘, 크롬(Cr), 지르코늄(Zr), 텅스텐(W), 레늄(Re)등의 금속이 적어도 한 종 이상 함유된 것이며,상기 분해금속산화물은 산화스칸드늄(Sc2O3)등과 같은 희토류금속산화물이 적어도 한 종 이상 함유된 것이다.The alkaline earth metal complex oxide containing barium oxide is barium oxide, strontium oxide (SrO), calcium oxide (CaO), and the like, and the active metal of the upper layer of electron-emitting material 104a is magnesium, silicon, chromium ( At least one metal such as Cr), zirconium (Zr), tungsten (W), or rhenium (Re) is contained, and the decomposed metal oxide includes at least rare earth metal oxides such as scandnium oxide (Sc 2 O 3 ). It contains one or more species.
이와같이 구성된 본 발명의 작용을 설명하면 다음과 같다.Referring to the operation of the present invention configured as described above is as follows.
먼저, 음극선관용 음극구조체의 슬리이브(102)내에 형성된 히터(101)에 전력이 가해지면 히터(101)가 발열하고, 상기 발열된 히터(101)의 열은 기체금속(103)을 가열하게 되고, 상기 기체금속(103)의 열로 인해 기체금속(103)과 전자방사물질(104)의 하층(104b)이 화학반응을 하게 되고, 상기 전자방사물질(104)의 하층(104b) 상단면에 도포된 전자방사물질(104)의 상층(104a)내에서도 화학반응이 일어나며, 상기 화학반응을 통해 전자가 생성된다.First, when electric power is applied to the heater 101 formed in the sleeve 102 of the cathode structure for the cathode ray tube, the heater 101 generates heat, and the heat of the heated heater 101 heats the base metal 103. Due to the heat of the base metal 103, the base metal 103 and the lower layer 104b of the electron emitting material 104 undergo a chemical reaction, and are applied to an upper surface of the lower layer 104b of the electron emitting material 104. A chemical reaction occurs in the upper layer 104a of the electron emitting material 104, and electrons are generated through the chemical reaction.
상기 전자방사물질(104)의 하층(104b)과 기체금속(103)사이에는 다음과 같은 화학반응이 일어난다.The following chemical reaction occurs between the lower layer 104b of the electron-emitting material 104 and the base metal 103.
4BaO + Si(기체금속중) = 2Ba + Ba2SiO4(반응물질)4BaO + Si (in gaseous metal) = 2Ba + Ba 2 SiO 4 (reactant)
BaO + Mg(기체금속중) = Ba + MgO(반응물질)BaO + Mg (in gas metal) = Ba + MgO (reactant)
Ba = Ba2++ 2e-(전자생성)Ba = Ba 2+ + 2e - (E generated)
또한, 전자방사물질(104)의 상층(104a)내에서는 알칼리토류금속복합산화물과 활성화금속과 분해금속산화물사이에 다음과 같은 화학반응이 일어나게 된다.In addition, in the upper layer 104a of the electron emitting material 104, the following chemical reaction occurs between the alkaline earth metal complex oxide, the activated metal and the decomposed metal oxide.
4BaO + Si(활성화금속) = 2Ba + Ba2SiO4(반응물질)4BaO + Si (activated metal) = 2Ba + Ba 2 SiO 4 (reactant)
BaO + Mg(활성화금속) = Ba + MgO(반응물질)BaO + Mg (activated metal) = Ba + MgO (reactant)
Ba = Ba2++ 2e-(전자생성)Ba = Ba 2+ + 2e - (E generated)
Sc2O3(분해금속산화물) + 3Mg = 2Sc + 3MgOSc 2 O 3 (Decomposed metal oxides) + 3Mg = 2Sc + 3MgO
3Ba2SiO4(반응물질) + 8Sc = 6Ba + 3Si + 4Sc2O3(반응물질분해)3Ba 2 SiO 4 (reactant) + 8Sc = 6Ba + 3Si + 4Sc 2 O 3 (reactant decomposition)
Ba = Ba2++ 2e-(전자생성)Ba = Ba 2+ + 2e - (E generated)
여기서, 상기 전자방사물질(104)의 하층(104b)과 기체금속(103)의 화학반응을 통해 발생되는 반응물질이 분해금속산화물에 의해 분해되지 않으므로 전자방사물질(104)과 기체금속(103)간의 결합력이 강하게 되어 전자방사물질(104)이 기체금속(103)으로부터 탈락하는 것을 방지하게 되고, 상기 전자방사물질(104)의 상층(104a)내에서의 화학반응을 통해 발생되는 반응물질은 분해금속산화물에 의해 분해되므로 고음극전유밀도가 가능하게 되는 것이다.Here, since the reactant generated through the chemical reaction between the lower layer 104b of the electron-emitting material 104 and the gas metal 103 is not decomposed by the decomposed metal oxide, the electron-emitting material 104 and the gas metal 103 The strong bonding force between the two prevents the electron-emitting material 104 from falling off from the base metal 103, and the reactants generated through the chemical reaction in the upper layer 104a of the electron-emitting material 104 are decomposed. Since it is decomposed by the metal oxide, high cathode dielectric density becomes possible.
이상에서 설명한 바와 같이 본 발명은 전자방사물질을 상층과 하층으로 구성함으로써 전자방사물질의 하층과 기체금속간의 화학반응을 통하여 전자방사물질이 기체금속으로부터 탈락되는 것을 방지하고, 전자방사물질의 상층내에서의 화학반응을 통하여 고음극전류밀도를 가능하게 하는 효과가 있다.As described above, the present invention comprises the upper and lower layers of the electron radiating material to prevent the electron radiating material from falling off from the base metal through the chemical reaction between the lower layer of the electron radiating material and the base metal. It is effective to enable high cathode current density through chemical reaction at.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960048310A KR100259420B1 (en) | 1996-10-25 | 1996-10-25 | Electron emission material compounds of electrode for crt |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960048310A KR100259420B1 (en) | 1996-10-25 | 1996-10-25 | Electron emission material compounds of electrode for crt |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19980029069A true KR19980029069A (en) | 1998-07-15 |
| KR100259420B1 KR100259420B1 (en) | 2000-06-15 |
Family
ID=19478926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960048310A KR100259420B1 (en) | 1996-10-25 | 1996-10-25 | Electron emission material compounds of electrode for crt |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100259420B1 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR910009660B1 (en) * | 1988-02-23 | 1991-11-25 | 미쓰비시전기 주식회사 | Cathode for electron tube |
| JPH02201841A (en) * | 1989-01-31 | 1990-08-10 | Sony Corp | Oxide coated hot-cathode |
-
1996
- 1996-10-25 KR KR1019960048310A patent/KR100259420B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100259420B1 (en) | 2000-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100195955B1 (en) | Cathode structure and the coating method of electron emitter | |
| US6417607B1 (en) | Cold electrode for gas discharges | |
| KR19980029069A (en) | Electrospinning material composition of cathode for cathode ray tube | |
| JPH0765694A (en) | Cathode for electron tube | |
| KR900006166B1 (en) | Method of making a borided dispenser cathode | |
| US6552485B2 (en) | Electron tube comprising a semiconductor cathode | |
| EP0263483B2 (en) | Hot cathode in wire form | |
| US20090273269A1 (en) | Scandate dispenser cathode | |
| KR940009306B1 (en) | Cathode for electron tube | |
| KR100397411B1 (en) | Cathode for electron tube | |
| KR100246293B1 (en) | Cathode for emitting electrons and manufacturing method thereof | |
| KR100269360B1 (en) | Cathode Structure for Cathode Ray Tube | |
| KR100228156B1 (en) | Cathode of cathode ray tube | |
| KR100249206B1 (en) | Electron emission metal in cathode ray tube | |
| KR0139639Y1 (en) | Cathode ray tube | |
| KR100228170B1 (en) | Method for manufacturing cathode of cathode ray tube | |
| KR100249208B1 (en) | Impregnated cathode | |
| JPH11329211A (en) | Impregnated negative electrode and manufacture thereof and electron gun thereof | |
| KR19980078449A (en) | Cathode Structure for Cathode Ray Tube | |
| KR100262638B1 (en) | cathode ray tube | |
| KR100244230B1 (en) | Structure for electron emission of cathode ray tube | |
| KR960030289A (en) | Impregnated dispenser cathode | |
| KR20010077443A (en) | Cathode structure for a cathode ray tube | |
| JPH04115437A (en) | Oxide cathode | |
| JPH11213860A (en) | Impregnated negative electrode structure and manufacture of negative electrode base |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application | ||
| J201 | Request for trial against refusal decision | ||
| AMND | Amendment | ||
| B701 | Decision to grant | ||
| GRNT | Written decision to grant | ||
| LAPS | Lapse due to unpaid annual fee |