KR100244230B1 - Structure for electron emission of cathode ray tube - Google Patents

Structure for electron emission of cathode ray tube Download PDF

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KR100244230B1
KR100244230B1 KR1019970065618A KR19970065618A KR100244230B1 KR 100244230 B1 KR100244230 B1 KR 100244230B1 KR 1019970065618 A KR1019970065618 A KR 1019970065618A KR 19970065618 A KR19970065618 A KR 19970065618A KR 100244230 B1 KR100244230 B1 KR 100244230B1
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cathode
layer
ray tube
cathode ray
metal
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KR19990047275A (en
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김태근
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구자홍
엘지전자주식회사
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/04Cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/13Solid thermionic cathodes
    • H01J1/14Solid thermionic cathodes characterised by the material
    • H01J1/142Solid thermionic cathodes characterised by the material with alkaline-earth metal oxides, or such oxides used in conjunction with reducing agents, as an emissive material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/04Manufacture of electrodes or electrode systems of thermionic cathodes
    • H01J9/042Manufacture, activation of the emissive part

Abstract

본 발명은 음극선관용 음극구조체에서 탄산바륨의 증발이 적고, 에미션(Emission)열화를 방지하여 사용수명을 증대시킴과 함께 전자의 균일 방출로 스크린의 해상도를 높게하는 것에 관한 것으로, 이에 따른 구성은 음극가열용 히터(4)가 삽입설치된 원통형 슬리이브(2)상단에 활성화금속이 미량 함유된 기체금속(1)이 구비되고, 기체금속(1)상면에는 순차적으로 적어도 산화바륨(BaO)이 포함된 알카리토류 금속 복합산화물을 스퍼터링(Sputtering) 증착으로 형성한 제 1 층(5)과, 오스뮴-루테늄(Os-Ru) 또는 이리듐(Ir)을 스퍼터링 증착으로 형성한 제 2 층(6)이 구성됨을 특징으로 하는 음극선관용 음극구조체에 관한 기술이다.The present invention relates to reducing evaporation of barium carbonate in a cathode ray tube cathode structure, preventing the deterioration of emission, increasing the service life, and increasing the resolution of the screen by uniform emission of electrons. A base metal (1) containing a trace amount of an active metal is provided on the upper portion of the cylindrical sleeve (2) in which the cathode heating heater (4) is inserted, and at least the barium oxide (BaO) is sequentially included on the top surface of the base metal (1). A first layer 5 formed of sputtered deposition of the alkaline earth metal composite oxide, and a second layer 6 formed of sputter deposition of osmium-ruthenium (Os-Ru) or iridium (Ir). The present invention relates to a cathode structure for a cathode ray tube.

Description

음극선관용 음극구조체Cathode Structure for Cathode Ray Tube

본 발명은 음극선관용 음극구조체에 관한 것으로, 특히 탄산바륨의 증발이 적고, 에미션(Emission) 열화를 방지하여 사용수명을 증대시킴과 함께 전자의 균일방출로 스크린의 해상도를 높게 하는데 적합한 음극구조체에 관한 것이다.The present invention relates to a cathode structure for a cathode ray tube, and particularly to a cathode structure suitable for increasing the resolution of the screen by uniform emission of electrons while increasing the service life by preventing evaporation of barium carbonate and preventing emission degradation. It is about.

최근 음극선관은 화면의 대형화, 고정세화, 그리고 다양한 정보에 따른 멀티미디어화로 고전류 밀도의 음극선관용 음극을 필요로 하고 있다.Recently, cathode ray tubes require a cathode for cathode ray tube of high current density due to screen size, high definition, and multimedia according to various information.

도 1은 기존의 음극선관용 음극구조체를 나타낸 개략단면도로써, 음극가열용 히터(4)가 삽입설치된 원통형 슬리이브(2)상단에 마그네슘(Mg), 실리콘(Si) 등을 미량함유하고 니켈(Ni)을 주성분으로한 기체금속(1)이 구비되고, 기체금속(1)상면에 적어도 산화바륨(BaO)이 포함된 전자방사물질(3)을 스프레이 코팅(Spray Coating)방식으로 형성시켜 구성된다.1 is a schematic cross-sectional view showing a cathode structure for a conventional cathode ray tube, containing a small amount of magnesium (Mg), silicon (Si) and the like on the upper portion of the cylindrical sleeve (2) in which the cathode heating heater (4) is inserted; ) Is provided by forming a base metal (1) as a main component, the electron-emitting material (3) containing at least barium oxide (BaO) on the upper surface of the base metal (1) by a spray coating method.

상기 구조에 따른 동작에 있어서는, 슬리이브(2)내에 삽입설치된 히터(4)의 가열에 의해 산화바륨(BaO)이 주성분인 전자방사물질(3)과 기체금속(1)내의 활성화금속 사이에서 화학반응이 일어나며 이로 인해 자유바륨(Ba)이 생성하게 되고 자유바륨(Ba)으로부터 전자를 생성하게 된다.In the operation according to the above structure, a chemical is formed between the electron-emitting material 3 whose main component is barium oxide (BaO) by the heating of the heater 4 inserted into the sleeve 2 and the activated metal in the base metal 1. The reaction occurs, which results in the generation of free barium (Ba) and electrons from the free barium (Ba).

이는 음극선관이 동작 중 계속적인 화학반응이 일어나며 기체금속(1)내의 활성화 금속은 기체금속(1)내를 확산하여 기체금속(1)표면으로 이동하고 전자방사물질(3)과 화학반응을 하게 되는 것이다.This causes a continuous chemical reaction during the operation of the cathode ray tube, and the activated metal in the gas metal (1) diffuses in the gas metal (1) to move to the surface of the gas metal (1) and to chemically react with the electron radiating material (3). Will be.

이를 화학적인 기호로 반응식을 살펴보면 다음과 같다.Looking at the reaction scheme as a chemical symbol is as follows.

Figure 1019970065618_B1_M0001
Figure 1019970065618_B1_M0001

음극전류 밀도란 음극선관에 있어서 음극의 최대전류가 40∼50%에 도달하는 시간을 약 20,000 시간으로 하여 수명의 종지점이라 정의할 때 최대 가능한 전류밀도를 말하며, 상기 종래의 음극선관용 산화물 음극의 전류밀도는 약 2A/㎠ 까지 가능하다.Cathode current density refers to the maximum possible current density when the end point of the lifetime is defined as about 20,000 hours when the maximum current of the cathode reaches 40 to 50% in the cathode ray tube. The current density can be up to about 2 A / cm 2.

그러나 상기 음극구조체에서 음극전류 밀도를 2A/㎠ 이상으로 사용하면 전자생성의 근원인 자유바륨(Ba)이 보다 많이 필요하게 되고, 이로 인해 상기의 화학반응식에서와 같이 고저항 물질인 Ba2SiO4와 MgO이 다량 발생하게 됨에 따라 높은 열이 발생되어 동작수명을 열화시키게 된다.However, the if the anode current density at a cathode structure used for more than 2A / ㎠ becomes the source of the electron generating free barium (Ba) this requires a lot more, whereby a high-resistance material, as in the above chemical reaction formula Ba 2 SiO 4 As a large amount of and MgO is generated, high heat is generated to deteriorate the operating life.

또한 종래 음극의 제조방식이 스프레이 코팅방식을 채택하고 있으며, 공극율이 60%로 많기 때문에 음극의 탄산염 증발이 많아 에미션(Emission)특성이 열화된다.In addition, the conventional method of manufacturing the negative electrode adopts the spray coating method, and the porosity is 60%, so the carbonate evaporation of the negative electrode is large, the emission (Emission) characteristics deteriorate.

한편, 산화바륨, 산화스트론튬 및 산화칼슘을 제조하여 스퍼터링 공정을 통하여 금속기재위에 전자방출 물질층이 형성되는 방법(국내특허공보 97-23606)이 있다.Meanwhile, there is a method of preparing barium oxide, strontium oxide and calcium oxide to form an electron-emitting material layer on a metal substrate through a sputtering process (Korean Patent Publication No. 97-23606).

그러나 이와 같은 음극은 일함수가 높으므로 Tk(캐소드 온도)가 높고, 탄산바륨의 증발이 많아지게 되어 에미션(Emission)열화를 발생시키는 등의 문제점이 있다.However, since such a cathode has a high work function, Tk (cathode temperature) is high, and barium carbonate is evaporated to increase the emission (Emission) degradation.

본 발명은 상기한 종래의 문제점을 해결하기 위해 안출한 것으로, 음극의 공극율이 거의 없고, 일함수를 낮출 수 있어 음극온도를 낮게 하는 것이 가능하여 탄산바륨의 증발이 억제됨으로써 에미션(Emission)열화를 방지하여 고전류밀도, 장수명이 가능한 음극구조체를 얻기 위하는데 그 목적이 있다.The present invention has been made in order to solve the above-mentioned conventional problems, there is little porosity of the negative electrode, the work function can be lowered, it is possible to lower the temperature of the cathode, deterioration of the emission (Emission) by suppressing evaporation of barium carbonate The purpose of the present invention is to obtain a cathode structure capable of high current density and long life by preventing the damage.

도 1은 종래 음극선관의 음극구조체를 나타낸 개략 단면도1 is a schematic cross-sectional view showing a cathode structure of a conventional cathode ray tube

도 2는 본 발명 음극선관의 음극구조체를 나타낸 개략 단면도Figure 2 is a schematic cross-sectional view showing the cathode structure of the cathode ray tube of the present invention

도면의 주요부분에 대한 부호의 설명Explanation of symbols for main parts of the drawings

1 : 기체금속 2 : 슬리이브1: Gas metal 2: Sleeve

4 : 히터 5 : 제 1 층4: heater 5: first floor

6 : 제 2 층 7 : 전자방사물질층6: 2nd layer 7: Electron emission material layer

상기 목적 달성을 위한 본 발명은 음극가열용 히터가 삽입설치된 원통형 슬리이브 상단에 활성화 금속이 미량 함유된 기체금속이 구비되고, 상기 기체금속 상면에는 산화바륨(BaO)이 포함된 알카리토류 금속 복합산화물을 스퍼터링(Sputtering)증착으로한 제 1 층과, 상기 제 1 층위에 오스뮴-루테늄(Os-Ru) 또는 이리듐(Ir)을 스퍼터링 증착으로한 제 2 층이 형성된 음극구조체로 구성된다.The present invention for achieving the above object is provided with a base metal containing a trace amount of the active metal on the top of the cylindrical sleeve is inserted into the heater for heating the cathode, the alkaline earth metal complex oxide containing barium oxide (BaO) on the gas metal upper surface And a cathode structure having a first layer formed by sputtering deposition and a second layer formed by sputter deposition of osmium-ruthenium (Os-Ru) or iridium (Ir) on the first layer.

상기 제 1 층의 두께는 1㎛ 이상으로 함이 바람직하다.It is preferable that the thickness of the said 1st layer shall be 1 micrometer or more.

도 2는 본 발명에 따른 음극구조체의 단면도를 나타낸 것으로, 음극가열용 히터(4)가 삽입설치된 원통형 슬리이브(2) 상단에 마그네슘(Mg), 실리콘(Si) 등의 활성화금속이 미량 함유된 기체금속(1)이 구비되고, 기체금속(1) 상면의 제 1 층(5)에는 적어도 산화바륨(BaO)이 포함된 알카리토류 금속 복합산화물이 스퍼터링 증착으로 형성되고, 제 2 층(6)에는 Os-Ru 또는 Ir이 스퍼터링 증착으로 형성된 전자방사물질층(7)으로 이루어진다.Figure 2 is a cross-sectional view of the negative electrode structure according to the present invention, containing a small amount of activated metal such as magnesium (Mg), silicon (Si) on the top of the cylindrical sleeve (2) in which the heater (4) for the negative electrode heating is inserted An alkaline earth metal composite oxide including at least barium oxide (BaO) is formed on the first layer 5 on the upper surface of the base metal 1 by sputter deposition, and the second layer 6 is provided with a base metal 1. Os-Ru or Ir consists of an electron-emitting material layer 7 formed by sputter deposition.

스퍼터링법은 저압의 챔버내에서 금속을 가열하거나 금속에 이온충격을 가하면 금속입자가 비산하여 부근의 물체면에 부착하는 현상을 이용하는 것이다.The sputtering method utilizes a phenomenon in which a metal particle scatters and adheres to a nearby object surface when a metal is heated or an ion shock is applied to the metal in a chamber of low pressure.

상기 산화바륨(BaO)이 포함된 알카리토류 금속 복합산화물로된 제 1 층(5)을 종래 방법인 스프레이 코팅(Spray Coating)법으로한 상태에서는 음극표면이 딱딱하지 않아 Os-Ru 또는 Ir의 스퍼터링 증착이 불가능하나, 본 발명은 상기 제 1 층(5)을 스퍼터링으로 증착함으로써 치밀하게 되어 표면이 딱딱한 상태가 되기 때문에 그 상부층, 즉 제 2 층(6)에 Os-Ru 또는 Ir을 스퍼터링 증착이 가능하게 되어 고전류, 장수명이 가능한 음극구조체를 얻을 수 있다.Sputtering of Os-Ru or Ir because the cathode surface is not hard when the first layer 5 of the alkaline earth metal composite oxide containing barium oxide (BaO) is made by the conventional spray coating method. Although the deposition is impossible, the present invention is because the sputtering of the first layer (5) becomes dense and the surface becomes hard, so that sputtering deposition of Os-Ru or Ir on the upper layer, that is, the second layer (6) This makes it possible to obtain a cathode structure capable of high current and long life.

본 발명은 음극선관용 음극구조체의 음극선관내에서 전자생성의 동작구조를 살펴보면 음극슬리이브(2)내에 삽입설치된 히터(4)의 가열에 의해 적어도 산화바륨(BaO)이 포함된 알카리토류 금속 복합산화물의 전자방사물질과 기체금속(1)내의 활성화 금속 또는 알카리토류 금속사이에서 화학반응이 일어나며 이로 인해 자유바륨(Ba)이 생성하게 되고 자유바륨(Ba)으로부터 전자를 생성하게 된다.The present invention looks at the operation structure of the electron generation in the cathode ray tube of the cathode structure for cathode ray tube of the alkaline earth metal composite oxide containing at least barium oxide (BaO) by the heating of the heater (4) inserted into the cathode sleeve (2) A chemical reaction occurs between the electron-emitting material and the activated metal or alkaline earth metal in the gas metal (1), thereby generating free barium (Ba) and generating electrons from the free barium (Ba).

이는 음극선관이 동작 중 계속적인 화학반응이 일어나며 기체금속(1)내의 활성화 금속은 기체금속(1)내를 확산하여 기체금속(1) 표면으로 이동하고 전자방사물질(7)과 화학반응을 하게 되는 것이다.This causes a continuous chemical reaction during the operation of the cathode ray tube, and the activated metal in the gas metal (1) diffuses in the gas metal (1) to move to the surface of the gas metal (1) and to chemically react with the electron radiating material (7). Will be.

예로써 기체금속(1)중의 알카리토류금속으로써 스트론튬(Sr)을 함유하고 있다면 반응식은 아래와 같다.For example, if the strontium (Sr) is contained as the alkaline earth metal in the base metal (1), the reaction formula is as follows.

Figure 1019970065618_B1_M0002
Figure 1019970065618_B1_M0002

본 발명은 동작수명중 기체금속(1)중의 마그네슘(Mg)을 제외한 알카리토류금속으로 부터 전자생성의 근원인 알카리토류금속의 자유원자를 공급하여 주므로 종래의 음극선관용 음극구조체에 있어서 음극전류밀도를 약 2A/㎠ 이상으로 사용할 때 기체금속(1) 상면의 제 1 층(5)에는 적어도 산화바륨(BaO)이 포함된 알카리토류 금속 복합산화물을 Sputtering 증착으로 박막을 형성하고, 제 2 층(6)에는 희토류 금속인 Os-Ru 또는 Ir을 Sputtering 증착하여 박막을 형성함으로써 음극의 공극율이 거의 없어 탄산바륨의 증발이 적게되고 Emission이 향상된다.The present invention provides a free atom of the alkaline earth metal, which is the source of electron generation, from the alkaline earth metal except for magnesium (Mg) in the base metal (1) during the service life. When used at about 2 A / cm 2 or more, a thin film is formed on the first layer 5 of the upper surface of the base metal 1 by sputtering deposition of an alkali earth metal composite oxide containing at least barium oxide (BaO), and the second layer 6 ) Is sputtered and deposited to form a thin film of Os-Ru or Ir, which is a rare earth metal, thereby reducing the evaporation of barium carbonate and improving the emission due to almost no porosity of the cathode.

또한 Os-Ru 또는 Ir은 workfunction(일함수)을 낮출 수 있는 물질로 Tk(캐소드 온도)를 낮게 하는 것이 가능하여 탄산바륨의 증발이 줄어들어 Emission 열화를 감소시킴으로써 수명 중 Emission 열화를 방지하여 고전류밀도, 장수명이 가능한 음극구조체이다.In addition, Os-Ru or Ir is a material that can lower the work function. It is possible to lower the Tk (cathode temperature), which reduces the evaporation of barium carbonate, thereby reducing the deterioration of emission. Long life cathode structure.

그리고 Os-Ru 및 Ir을 제 2 층(상부)에 Sputtering 증착으로 박막을 형성함으로써 음극은 매우 미세하고 균일한 전자방출 물질층을 갖기 때문에 방출되는 전자가 균일하므로 스크린의 해상도를 높일 수 있다.By forming a thin film by sputtering deposition of Os-Ru and Ir on the second layer (upper), since the cathode has a very fine and uniform layer of electron-emitting material, electrons emitted are uniform, thereby increasing the screen resolution.

이상에서와 같이 본 발명은 기체금속(1)의 상면에 적어도 산화바륨(BaO)이 포함된 알카리토류 금속 복합산화물로된 제 1 층(5)과 Os-Ru 또는 Ir으로된 제 2 층을 각각 스퍼터링법으로 증착시킴으로써 음극의 공극율이 거의 없고 일함수를 낮출 수 있어 탄산바륨의 증발 억제로 에미션(Emission)열화를 방지하여 고전류밀도, 장수명이 가능한 효과를 갖는 음극구조체를 얻게 된다.As described above, the present invention provides a first layer 5 made of an alkaline earth metal complex oxide containing at least barium oxide (BaO) on the upper surface of the base metal 1 and a second layer made of Os-Ru or Ir, respectively. By depositing by the sputtering method, the cathode has almost no porosity and the work function can be lowered. Thus, deterioration of emission is prevented by suppressing evaporation of barium carbonate, thereby obtaining a cathode structure having the effect of high current density and long life.

Claims (3)

음극가열용 히터(4)가 삽입설치된 원통형 슬리이브(2)상단에 활성화금속이 미량 함유된 기체금속(1)이 구비되고, 기체금속(1)상면에는 순차적으로 적어도 산화바륨(BaO)이 포함된 알카리토류 금속 복합산화물을 형성한 제 1 층(5)과, 오스뮴-루테늄(Os-Ru) 또는 이리듐(Ir)을 형성한 제 2 층(6)이 구성됨을 특징으로 하는 음극선관용 음극구조체.A base metal (1) containing a trace amount of an active metal is provided on the upper portion of the cylindrical sleeve (2) in which the cathode heating heater (4) is inserted, and at least the barium oxide (BaO) is sequentially included on the top surface of the base metal (1). A cathode structure for a cathode ray tube, characterized in that it comprises a first layer (5) on which an alkaline earth metal composite oxide is formed, and a second layer (6) on which osmium-ruthenium (Os-Ru) or iridium (Ir) is formed. 제 1 항에 있어서,The method of claim 1, 제 1 층(5)의 두께가 1㎛ 이상임을 특징으로 하는 음극선관용 음극구조체.Cathode structure for cathode ray tube, characterized in that the thickness of the first layer (5) is 1㎛ or more. 제 1 항에 있어서,The method of claim 1, 오스뮴-루테늄(Os-Ru) 또는 이리듐(Ir)을 스퍼터링 증착방법으로 제 2 층을 형성한 것을 특징으로 하는 음극선관용 음극구조체.A cathode structure for a cathode ray tube, characterized in that the second layer is formed by sputtering deposition of osmium-ruthenium (Os-Ru) or iridium (Ir).
KR1019970065618A 1997-12-03 1997-12-03 Structure for electron emission of cathode ray tube KR100244230B1 (en)

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