KR19980026060A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing device Download PDFInfo
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- KR19980026060A KR19980026060A KR1019960044385A KR19960044385A KR19980026060A KR 19980026060 A KR19980026060 A KR 19980026060A KR 1019960044385 A KR1019960044385 A KR 1019960044385A KR 19960044385 A KR19960044385 A KR 19960044385A KR 19980026060 A KR19980026060 A KR 19980026060A
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Abstract
신규한 반도체 제조장치가 개시되어 있다. 저압화학기상증착(LPCVD) 공정을 수행하는 반도체 제조장치에 있어서, 반응가스를 공급하는 가스라인이 펌핑라인과 분리되어 튜브의 플랜지에 직접 연결되는 것을 특징으로 한다. 공정을 진행하는 중에 발생되는 반응생성물이 튜브 내로 유입되는 것을 방지하여 미립자의 발생을 억제할 수 있다.A novel semiconductor manufacturing apparatus is disclosed. In a semiconductor manufacturing apparatus performing a low pressure chemical vapor deposition (LPCVD) process, the gas line for supplying the reaction gas is separated from the pumping line is characterized in that it is directly connected to the flange of the tube. The reaction product generated during the process can be prevented from flowing into the tube to suppress the generation of fine particles.
Description
본 발명은 반도체 제조장치에 관한 것으로, 특히 저압화학기상증착(low pressure chemical vapor deposition; 이하 LPCVD라 한다) 반응장치(reactor)를 이용한 반도체 제조공정에 있어서, 공정 중에 발생되는 반응생성물이 튜브(tube) 내로 유입되는 것을 방지할 수 있는 반도체 제조장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus. In particular, in a semiconductor manufacturing process using a low pressure chemical vapor deposition (LPCVD) reactor, a reaction product generated during the process is a tube. It relates to a semiconductor manufacturing apparatus that can prevent the flow into).
화학기상증착(CVD) 공정은 원하는 성분들을 함유하고 있는 증기상태의 화학제의 반응에 의해 기판 상에 불활성 고체막을 형성하는 공정이다. 반응가스들은 반응챔버 내로 유입되어 분해되고 가열된 표면에서 반응되어 박막을 형성하게 된다. 특히, LPCVD 반응장치에서 행해지는 CVD 공정은 초기의 대기압 CVD(atmospheric pressure CVD; APCVD) 반응장치에서 행해지는 CVD 공정에 비해 균일성, 단차 도포성 및 미립자(particle) 오염도 등의 측면에서 우수한 특성을 나타낸다. 현재, LPCVD 공정은 고온산화막, 폴리실리콘막, 질화막, 텅스텐막 등을 형성하는데 주로 사용되고 있다.Chemical Vapor Deposition (CVD) is a process of forming an inert solid film on a substrate by reaction of a chemical in a vapor state containing desired components. The reaction gases are introduced into the reaction chamber to decompose and react on the heated surface to form a thin film. In particular, the CVD process performed in the LPCVD reactor has superior characteristics in terms of uniformity, step coverage, and particle contamination compared to the CVD process performed in the initial atmospheric pressure CVD (APCVD) reactor. Indicates. Currently, the LPCVD process is mainly used to form high temperature oxide film, polysilicon film, nitride film, tungsten film and the like.
LPCVD 반응장치는 수평형 반응장치와 수직형 반응장치로 나뉘어진다. 이 중에서 수직형 LPCVD 반응장치에서 사용되는 반응로(furnace)는 가열챔버(heating chamber)와 튜브로 구성되는데, 진공상태에서 반응가스가 튜브 내로 주입되면 가열챔버의 열에 의해 분해된 가스가 웨이퍼의 표면에서 결합되면서 원하는 막이 형성된다.LPCVD reactor is divided into horizontal reactor and vertical reactor. Among them, the furnace used in the vertical LPCVD reactor is composed of a heating chamber and a tube. When the reaction gas is injected into the tube in a vacuum state, the gas decomposed by the heat of the heating chamber is formed on the surface of the wafer. Are combined to form the desired film.
도 1은 종래의 수직형 LPCVD 반응장치의 구조를 나타내는 개략도이다.1 is a schematic view showing the structure of a conventional vertical LPCVD reactor.
도 1을 참조하면, LPCVD 장치를 이용하여 질화막을 형성하고자 할 때, 질소(N2) 가스를 튜브 내로 유입시켜 압력을 조절하게 된다. 이 것을 N2CLP 방식이라 하는데, 가스유량제어부(mass flow controller; MFCP)로부터 N2가스가 유입되어 튜브 내의 압력을 조절하게 된다. 이때, 상기 N2가스를 유입시키는 가스라인이 튜브 내부를 진공상태로 유지시키기 위한 펌핑라인(pumping line)과 연결되어 있기 때문에, N2가스가 MFCP로부터 76 밸브 및 튜브 내의 진공상태를 제어하기 위한 게이트밸브(gate valve)를 거치면서 튜브 내로 유입되는 과정에서 상기 펌핑라인에 흡착되어 있던 반응생성물이 튜브 내로 유입되어 미립자를 발생시키게 된다.Referring to FIG. 1, when a nitride film is to be formed using an LPCVD apparatus, nitrogen (N 2 ) gas is introduced into a tube to adjust a pressure. This is called N 2 CLP method, the N 2 gas is introduced from the mass flow controller (MFCP) to control the pressure in the tube. At this time, since the gas line into which the N 2 gas is introduced is connected to a pumping line for maintaining the inside of the tube in a vacuum state, the N 2 gas is used to control the vacuum state in the 76 valve and the tube from the MFCP. The reaction product adsorbed to the pumping line is introduced into the tube while generating the fine particles by flowing through the gate valve into the tube.
따라서, 본 발명이 이루고자 하는 기술적 과제는, LPCVD 반응장치를 이용한 반도체 제조공정에 있어서, 공정 중에 발생되는 반응생성물이 튜브 내로 유입되는 것을 방지할 수 있는 반도체 제조장치를 제공하는데 있다.Accordingly, a technical object of the present invention is to provide a semiconductor manufacturing apparatus capable of preventing a reaction product generated during a process from flowing into a tube in a semiconductor manufacturing process using an LPCVD reaction apparatus.
도 1은 종래의 저압화학기상증착 반응장치의 구조를 나타내는 개략도.1 is a schematic view showing the structure of a conventional low pressure chemical vapor deposition reactor.
도 2는 본 발명에 의한 저압화학기상증착 반응장치의 구조를 나타내는 개략도.Figure 2 is a schematic diagram showing the structure of a low pressure chemical vapor deposition reactor according to the present invention.
상기 과제를 이루기 위하여 본 발명은, LPCVD 공정을 수행하는 반도체 제조장치에 있어서, 반응가스를 공급하는 가스라인이 펌핑라인과 분리되어 튜브의 플랜지(flange)에 직접 연결되는 것을 특징으로 하는 반도체 제조장치를 제공한다.In order to achieve the above object, the present invention, in the semiconductor manufacturing apparatus performing the LPCVD process, the semiconductor manufacturing apparatus, characterized in that the gas line for supplying the reaction gas is separated from the pumping line is directly connected to the flange (flange) of the tube To provide.
이하, 본 발명의 바람직한 실시예를 첨부한 도면을 참조하여 상세히 설명하고자 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 2는 본 발명에 의한 수직형 LPCVD 반응장치의 구조를 나타내는 개략도이다.2 is a schematic view showing the structure of a vertical LPCVD reactor according to the present invention.
도 2를 참조하면, 본 발명에 의한 수직형 LPCVD 반응장치는 종래의 것과 마찬가지로, 진공상태에서 반응가스가 튜브 내로 주입되어 가열챔버의 열에 의해 분해된 가스가 웨이퍼의 표면에서 결합되면서 원하는 막이 형성되는 반응로와, 가스유량제어부(MFCP), 반응가스를 공급하는 가스라인, 튜브 내의 진공상태를 제어하기 위한 게이트밸브, 및 튜브 내부를 진공상태로 유지시키기 위한 펌핑라인으로 구성된다. 그러나, 종래의 LPCVD 반응장치와는 달리, 가스라인이 76 밸브에서 펌핑라인과 분리되어 튜브의 플랜지에 직접 연결됨으로써, 튜브 내의 압력을 조절하게 된다. 따라서, 본 발명의 LPCVD 반응장치를 이용하여 질화막을 형성하고자 할 때, N2가스가 펌핑라인과 분리된 가스라인을 통해 직접 튜브 내로 유입되기 때문에 펌핑라인에 흡착되어 있던 반응생성물이 튜브 내로 유입되는 것을 완전히 제거할 수 있다.Referring to FIG. 2, in the vertical LPCVD reactor according to the present invention, as in the prior art, a reaction film is injected into a tube in a vacuum state, and a gas decomposed by heat of a heating chamber is combined on a surface of a wafer to form a desired film. A reactor, a gas flow rate control unit (MFCP), a gas line for supplying the reaction gas, a gate valve for controlling the vacuum state in the tube, and a pumping line for maintaining the inside of the tube in a vacuum state. However, unlike conventional LPCVD reactors, the gas line is separated from the pumping line at 76 valves and directly connected to the flange of the tube, thereby regulating the pressure in the tube. Therefore, when the nitride film is formed by using the LPCVD reaction apparatus of the present invention, since N 2 gas is directly introduced into the tube through the gas line separated from the pumping line, the reaction product adsorbed on the pumping line is introduced into the tube. You can remove it completely.
상술한 바와 같이 본 발명에 의하면, LPCVD 공정을 수행하는 반도체 제조장치에 있어서, 반응가스를 공급하는 가스라인이 펌핑라인과 분리되어 튜브의 플랜지에 직접 연결되도록 한다. 따라서, 공정을 진행하는 중에 발생되는 반응생성물이 튜브 내로 유입되는 것을 방지하여 미립자의 발생을 억제시킬 수 있다.As described above, according to the present invention, in the semiconductor manufacturing apparatus performing the LPCVD process, the gas line for supplying the reaction gas is separated from the pumping line so as to be directly connected to the flange of the tube. Therefore, the reaction product generated during the process can be prevented from flowing into the tube to suppress the generation of fine particles.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960044385A KR19980026060A (en) | 1996-10-07 | 1996-10-07 | Semiconductor manufacturing device |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019960044385A KR19980026060A (en) | 1996-10-07 | 1996-10-07 | Semiconductor manufacturing device |
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| KR19980026060A true KR19980026060A (en) | 1998-07-15 |
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| KR1019960044385A KR19980026060A (en) | 1996-10-07 | 1996-10-07 | Semiconductor manufacturing device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100826502B1 (en) * | 2006-09-18 | 2008-05-02 | 삼성전자주식회사 | Semiconductor Manufacturing Apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100826502B1 (en) * | 2006-09-18 | 2008-05-02 | 삼성전자주식회사 | Semiconductor Manufacturing Apparatus |
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