KR19980021439A - Diffusion Furnace Equipment and Thermal Process Progression Method of Semiconductor Manufacturing Equipment - Google Patents

Abstract

The present invention has a tube that is heated by a heating means therein, the reaction chamber is formed on one side of the opening and closing door, the wafer is loaded into the tube, the bottom is formed with a pedestal, the wafer boat is loaded with a plurality of wafers therein In the diffusion furnace apparatus of the conventional semiconductor manufacturing equipment which heats the wafer and proceeds the process, the tube has a high temperature region near the half of the chamber door and a low temperature region of the chamber far away from the opening door. Prevent uniformity.

Description

Diffusion Furnace Equipment and Thermal Process Progression Method of Semiconductor Manufacturing Equipment

1 is a view showing a diffusion furnace apparatus and a thermal process progress method of a conventional semiconductor manufacturing equipment,

2 is a view illustrating a diffusion furnace apparatus and a thermal process progressing method of a semiconductor manufacturing apparatus of the present invention.

Explanation of symbols for main parts of the drawings

10, 20. Heating chamber 11, 12. Heating means

12, 22.Tube 13, 23. Opening and closing door

14, 24. Wafer boat 15, 25. Wafer

14-1, 24-1. Pedestal

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a diffusion furnace apparatus of a semiconductor manufacturing equipment and a method of proceeding a thermal process, in particular, a wafer loaded on a wafer boat loaded (unloaded) from a tube (TUBE). (WAFER) relates to a diffusion furnace apparatus and a method of thermal processing of a semiconductor manufacturing equipment suitable for uniformly receiving heat.

The diffusion furnace apparatus of semiconductor manufacturing equipment is a device for injecting impurities into silicon (SILICON), and it is important to control the amount and distribution of impurities through diffusion in semiconductor device production.

1 is a view for explaining a diffusion furnace device of a semiconductor manufacturing equipment, will be described with reference to the accompanying drawings.

The diffusion furnace apparatus of the conventional semiconductor manufacturing equipment has a tube 10-1 heated therein by the heating means 10-2, as shown in FIG. 10 and a wafer boat 14 on which a pedestal 16 is formed at a lower end, and on which a plurality of wafers 15 are loaded, the wafer boat into the tube 10-1 of the reaction chamber 10. Is loaded, and a plurality of wafers 15 in the wafer boat 14 are heated so that the thermal process proceeds.

First, when the thermal process proceeds in the diffusion furnace apparatus of the conventional semiconductor manufacturing equipment in which the diffusion process is performed on the wafer, the reaction chamber 10 is heated by the heating means 10-2 during the heat treatment process. The opening / closing door 10-3 installed at one side of the reaction chamber 10 opens and the wafer boat 14 is loaded into the tube 10-1 so that a heat treatment process is performed on the wafer 15 loaded in the wafer boat 14. Proceed.

After the heat treatment process is completed, the wafer boat 14 comes out of the tube 10-1.

At this time, as the opening and closing door (10-3) is opened and closed due to the temperature drop due to contact with the air outside the upper portion and the lower portion in the tube (10-1) temperature difference occurs.

And the difference temperature in the tube (10-1) is restored to the low phase setting temperature only at the end of the heat treatment process.

Therefore, in the diffusion apparatus of the conventional semiconductor manufacturing equipment, as the temperature difference in the tube occurs, the wafer loaded on the lower portion of the wafer boat receives different heat from the wafer loaded on the upper portion of the wafer boat. A nonuniform deposited film of is obtained.

SUMMARY OF THE INVENTION The present invention has been made to solve this problem, and an object of the present invention is to provide a diffusion furnace apparatus and a thermal processing method of a semiconductor manufacturing equipment capable of uniform heat supply on a wafer.

The present invention includes a tube having a tube heated inside by a heating means, a reaction chamber having an opening and closing door formed at one side thereof, and a pedestal formed at a lower end thereof, and a wafer boat having a plurality of wafers loaded into the tube. In the diffusion furnace apparatus of the conventional semiconductor manufacturing equipment which heats and processes, the tube is configured to have a high temperature region near the opening / closing door of the reaction chamber and to have a low temperature region far from the opening / closing door, so that the heat is uniformly supplied. In the method of proceeding the thermal process using the diffusion furnace apparatus of the semiconductor manufacturing equipment of the present invention, the wafer boat is introduced to the high temperature region in the tube, and then the operation of introducing the wafer boat to the low temperature region is performed repeatedly.

2 is a view showing a diffusion device of a semiconductor manufacturing apparatus of the present invention, will be described with reference to the accompanying drawings.

The diffusion apparatus of the semiconductor manufacturing equipment of the present invention, as shown in FIG. 2, has a tube 20-1 heated by a heating means 20-2 (for example, an electric heater), and on one side thereof, an opening and closing door 20-3. The wafer is provided with a reaction chamber 20 formed therein, and a pedestal 26 formed at a lower end thereof, and a wafer boat 24 on which a plurality of wafers 25 are loaded and loaded into the tube 20-1. In the diffusion furnace apparatus of the conventional semiconductor manufacturing equipment for heating the process while heating, the tube 20-1 has a high temperature region near the opening and closing door 20-3 of the reaction chamber 20, and far from the opening and closing door. It is configured to have a low temperature region, the half according to the opening and closing of the door to prevent the temperature non-uniformity in the chamber.

The length of the tube 20-1 of the diffusion furnace apparatus of the semiconductor manufacturing equipment of the present invention is the same as before, but is divided into two parts into a high temperature region and a low temperature region, and the heating means 20-2 is provided only near the reaction chamber 20. Is added to form a high temperature region and a low temperature region away from the reaction chamber 20.

In addition, the bottom of the wafer boat 24 is formed, and the pedestal 26 supporting the wafer boat is formed to have the same length as the wafer boat length so that the wafer is loaded on the top of the wafer boat.

Referring to FIG. 2, a method of thermally processing a wafer in a tube 20-1 of a diffusion furnace apparatus of a semiconductor manufacturing apparatus of the present invention will be described. First, an opening and closing door 20 installed below the reaction chamber 20 will be described. -3) is opened, the wafer boat 24 having a plurality of wafers 25 loaded thereon is loaded up to the portion A of the top of the high temperature region of the tube 20-1.

Then, the wafer boat 24 is loaded up to the uppermost part (B portion) of the low temperature region of the tube 20-1, which is the low temperature region.

That is, as the wafer boat 24 is moved back and forth between the A and B portions, each wafer may receive a uniform heat supply regardless of the position of the wafer loaded on the wafer boat.

Therefore, in the diffusion furnace apparatus of the semiconductor manufacturing equipment of the present invention, since a uniform heat supply is possible to a plurality of wafers loaded on a wafer boat, regardless of the position, the same effect is applied to the damage reduction and the formation of the junction, which are the purpose of the heat treatment process. You can get it.

Claims (2)

It has a tube that is heated by a heating means therein, the reaction chamber is formed on one side of the opening and closing door, the wafer is loaded into the tube, the bottom is formed with a pedestal, and a plurality of wafers are loaded therein In the diffusion furnace device of the semiconductor manufacturing equipment for processing the wafer while heating the wafer, the tube is configured to have a high temperature region near the reaction chamber and the opening and closing doors, and to have a low temperature region far from the opening and closing doors, The diffusion furnace apparatus of the semiconductor manufacturing equipment for preventing the temperature non-uniformity in the reaction chamber. In a method of thermal processing applied to a wafer loaded on a wafer boat in a tube having a low temperature region and a high temperature region of a diffusion furnace apparatus of a semiconductor manufacturing equipment, the wafer boat is first introduced into a high temperature region of the tube. And, wherein the step of introducing the wafer boat to the low temperature region is repeatedly performed.