KR100482377B1 - manufacturing apparatus of semiconductor device - Google Patents

Abstract

The present invention relates to a lift pin penetrating a susceptor provided inside a chamber for manufacturing a semiconductor and lifting a wafer seated on an upper surface of the susceptor. A susceptor having a wafer seated thereon, vertical movement in the chamber, and having a plurality of lift pin holes penetrating up and down; The semiconductor manufacturing apparatus includes a plurality of lift pins which are installed to move vertically in the state of penetrating the plurality of lift pin holes, respectively, and have protruding ends protruding from the upper surface thereof, thereby realizing a more improved semiconductor device. To make it possible.

Description

Manufacturing apparatus of semiconductor device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly, a lift that penetrates a susceptor provided inside a semiconductor manufacturing chamber, and lifts a wafer seated on an upper surface of the susceptor. It is related to a lift pin.

In recent years, with the development of science, the field of new materials, which enables the development and processing of new materials, has been rapidly developed, and the development results of these materials are driving the development of the semiconductor industry.

A semiconductor device is a large scale integration (LSI), which is realized through a process of depositing and patterning a thin film several times on the upper surface of a wafer, which is a substrate, and depositing and patterning such a thin film. This process is usually performed in a chamber type process module.

Referring to FIG. 1, a general chamber type process module 10 is a sealed reaction vessel in which a wafer 1 is mounted therein and a direct processing process such as depositing or patterning a thin film on an upper surface thereof is performed. A source and a reactant supply unit 40 which stores a gaseous material such as a source and a reactant for the progress of a desired process in the chamber 20 and the chamber 20, and supplies the same into the chamber 20. ) Is included.

At this time, the chamber 20 controls the pressure inside the chamber by discharging the supply pipe 42 having one end connected to the source and the reactant supply part 40 and the gas therein so that the aforementioned source and the reactant can be introduced. A discharge tube 24 and a pump (P) attached to the end thereof, and a susceptor (30) in the form of a disc, usually made of a material such as graphite or silicon carbide (SiC) is installed therein. When the wafer 1 is seated on the upper surface thereof, first, when the wafer 1 is seated on the upper surface of the susceptor 30 and the chamber 20 is sealed, the pump P disposed at the end of the discharge pipe 24 is closed. After the internal environment of the chamber 20 is controlled through the supply of the source and reactants 40, the chemical reaction of the source and the reactants introduced into the chamber 20 through the supply pipe 42 connected to the source and the reactant supply unit 40 is performed. ) Is processed and processed.

Accordingly, the source and the reactant are evenly distributed to the entire internal area of the chamber 20 through the injector 22 coupled to the other end of the supply pipe 42 in the chamber 20, and although not shown, a susceptor ( A heater is mounted inside the vessel 30 to accelerate the chemical reaction of the source and the reactant. The susceptor 22 includes a plurality of lift pins 34 for elevating the wafer 1 seated thereon. It is installed through the bar, which will be described in more detail with reference to FIGS. 1 and 2.

2 is a cross-sectional view of the susceptor 30 installed in the chamber 20 shown in FIG. 1 and a plurality of lift pins 34 penetrating the same. First, the susceptor 30 is a wafer. (1) has a heater (not shown) for heating the wafer 50 therein for the deposition of the thin film and improving its processing speed and more stable process implementation, and in the lower part of the susceptor 30 The lift pin base 32 in which a plurality of lift pins 34 are vertically disposed is positioned, and the plurality of lift pins 34 pass through the susceptor 30.

For reference, the susceptor 30 and the lift pin base 32 may be respectively lifted and lowered through driving means 52 and 54 such as an air cylinder or a motor installed outside the chamber 1. Is common.

Therefore, a loading step of introducing the wafer 1 into the chamber 20 from the outside to be seated on the upper surface of the susceptor 30, and the unloading wafer 1 to be taken out into the chamber 20. In the unloading step, the lift pin base 32 is raised to protrude a plurality of lift pins 34 onto the upper surface of the susceptor 30 so as to elevate the wafer 1 to proceed the process more smoothly. .

In this case, the susceptor 30 and the lift pin 34 penetrating the same will be described in detail with reference to FIG. 3 showing a cross section taken along the line II-II of FIGS. 2 and 2. A plurality of penetrated lift pin holes 30a are installed, and the lift pin holes 30a are respectively lifted and lifted with the lift pins 34 inserted into the upper surface of the susceptor 30 to protrude or enter the wafer 1. In this case, the lifting end 34a is formed at the upper end of each lift pin 34, and the upper end of the lift pin hole 30a is recessed so as to correspond to the locking end 34a. It is common that the locking step 30b having a size enough to allow the locking end 34a to be completely inserted therein is installed.

Therefore, as shown in FIG. 3, when the lift pin 34 is lowered as much as possible, that is, while the wafer 1 is being processed, the susceptor 30 is in close contact with the upper surface of the susceptor 30. Heated by the driving of the heater (not shown) inside, the temperature of the upper surface of the susceptor 30 is different from the engaging jaw (30b) portion of the lift pin hole (30a), the temperature of the other portion.

That is, the latter is compared with the temperature of the upper surface of the susceptor 30 directly heated by the heater therein and the temperature of the locking step 30b in which the locking end 34a of the lift pin 34 heated indirectly is introduced. In addition, since the locking end 34a is generally spaced apart from the wafer 1, the heat of the heater may not be sufficiently transferred in the spaced part inside the chamber having a vacuum environment. 34) The temperature gradient of the part shows a significant difference.

When the wafer is observed after the process is completed, as shown in FIG. 4, the portion A corresponding to the engaging end 34a or the engaging jaw 30b in which the lift pin 34 is installed is different from the other portion B. It is frequently observed that the degree of process progression with the part directly contacting the upper surface of the susceptor 30 shows a considerable difference.

In addition, in the portion B directly contacting the upper surface of the susceptor 30, as the wafer 1 is heated, deformation such as local warping occurs, and thus, the deposition degree and etching degree of the thin film are frequently different. Is observed.

This reduces the manufacturing yield of the semiconductor device and at the same time has an important influence on the uniformity, the critical dimension, the profile and the repeatability of the finished semiconductor device, and thus the quality of the device. Have

The present invention has been made to solve the above problems, and an object of the present invention is to provide a lift pin that enables more uniform wafer processing and processing.

The present invention to achieve the above object, the chamber; A susceptor mounted on the wafer with the wafer spaced apart from each other, vertically moving in the chamber, and having a plurality of lift pin holes penetrating up and down; Provided is a semiconductor manufacturing apparatus including a plurality of lift pins which are installed to be movable vertically in a state of penetrating the plurality of lift pin holes, respectively, the hemispherical protrusion end is formed on the upper surface.

In addition, the upper end of the lift pin according to the present invention is provided with a locking end, and the upper end of the lift hole may further include a locking step into which the locking end can be inserted, wherein the hemispherical protrusion end is the locking end. Characterized in that formed on the upper surface.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Particularly, the present invention provides a projecting end to an upper end of a lift pin to enable more uniform processing and processing of a wafer. 5 shows a chamber type process module employing such a lift pin according to the present invention.

The chamber-type process module 110 employing the lift pin according to the present invention includes a chamber 120 which is a sealed reaction container in which a wafer 1 is seated therein and a direct processing process is performed. A source and a reactant supply unit 140 for storing a source and a reactant gas supplied into the bar and the reactant supply unit 140 are provided. In this case, the source and the reactant supply unit may be introduced into the chamber 120 to allow the aforementioned source and the reactant to be introduced. An injector 122 for uniformly diffusing the source and the reactant to the entire internal area of the chamber 120 with one end connected to the 140 and a part of the other end drawn into the chamber 120; The supply pipe 142 to be connected, the discharge pipe 124 for discharging the gas in the chamber and the pump (P) attached to the end thereof is the same as in the general case.

At this time, in the state in which the lift pin 134 according to the present invention is installed through the chamber 120, a susceptor 130 on which the wafer 1 is seated is installed. Preferably, the susceptor ( A heat generating heater (not shown) is mounted inside the 130 to heat the wafer 1.

That is, FIG. 5 and FIG. 6, which is a perspective view of the susceptor 130 installed in the chamber 120 shown in FIG. 5 and the plurality of lift pins 134 penetrating the same, will be described in more detail. The susceptor 130 is mounted with a heater (not shown) for improving the processing speed of the wafer 1 and for implementing a more stable process, and a plurality of lift pins under the susceptor 130. The lift pin base 132 is vertically installed 134, the plurality of lift pins 134 is configured to penetrate the susceptor 130, preferably such a susceptor 130 and the lift pin base The 132 is configured to be lifted and lowered through driving means 152 and 154, such as an air cylinder or a motor, which are installed outside the chamber 120, respectively.

Accordingly, after the plurality of lift pins 134 are raised to protrude to the upper surface of the susceptor 130, the wafer 1 is seated on the lift pins 134, and then the plurality of lift pins 134 are disposed. When the wafer 1 is loaded and loaded on the upper surface of the susceptor 130, the chamber 120 is sealed and the chamber 120 is disposed through the pump P installed at the end of the discharge pipe 124. The internal environment of the wafer is controlled, and the wafer 1 is processed and processed by chemical reaction of the source and the reactant introduced into the chamber 120 through the supply pipe 142 connected to the source and the reactant supply unit 140.

When the processing and processing of the wafer 1 is completed, the lift pin 134 is raised again to lift the wafer 1 to the upper portion of the susceptor 130 through an unloading process to be carried out to the outside. Completion of the processing process of one wafer, which is shown in Figure 7 showing a cross-sectional view taken along the line VI-VI of Figure 6 and 6, Preferably, the susceptor 130 has a plurality of through The lift pin hole 130a is installed, and a plurality of lift pins 134 are inserted into and lifted from the lift pin hole 130a.

Particularly preferably, a locking end 134a is formed at an upper end of each lift pin 134, and a recess end 134a is formed at the upper end of the lift pin hole 130a so as to correspond to the locking end 134a. It is advantageous that the locking step 130b having a size enough to allow the 134a to be fully introduced into the inside thereof is particularly advantageous. In the present invention, a protruding end may be provided on an upper surface of the locking end 134a of the lift pin 134. 134b).

That is, referring to an enlarged view of a part of FIG. 7, the lift pin 134 according to the present invention includes a protruding end 134b provided on an upper surface of the engaging end 134a. The upper surface of the susceptor 130 has a wafer 1 seated on the upper surface of the susceptor 130 by a predetermined length h. Away from it.

Therefore, in the chamber 120 in which the lift pin 134 according to the present invention is mounted, the wafer 1 is predetermined as the upper part of the susceptor 130 except for the portion where the bottom surface of the wafer 1 contacts the protruding end. Since the process proceeds in a spaced apart state, heat is uniformly transferred over the entire surface of the wafer 1, and the whole heat is heated through development to the thermal conduction of the wafer itself. It is to effectively prevent the temperature gradient of the locking jaw (130b) portion and other parts.

The present invention has the advantage that it is possible to effectively control the temperature gradient phenomenon generated in the corresponding portion of the lift pin in a general semiconductor manufacturing process by providing a projecting end projecting on the upper surface of the lift pin.

Although the present invention can be implemented by applying a simple deformation to a general lift pin, the effect can be very large, that is, the heating and processing proceeds while the wafer is slightly floating on the upper surface of the susceptor, so that the heat of the heater This is evenly transferred to the wafer, and the heat conduction of the wafer itself enables more uniform heating, and in particular, it is possible to maintain a uniform heating state irrespective of deformation of the wafer generated in the heating and processing of the wafer.

Therefore, when a semiconductor device is implemented through a chamber employing a lift pin according to the present invention, the manufacturing yield is increased, as well as excellent uniformity, critical dimension, profile, and repeatability of the finished device. It has the advantage that it can give a characteristic such as).

1 is a schematic structural diagram showing the structure of a chamber type process module for a general semiconductor manufacturing

FIG. 2 is a perspective view illustrating a susceptor installed in a general semiconductor manufacturing chamber and a lift pin penetrating the susceptor.

3 is a cross-sectional view taken along the line II-II of FIG. 2.

4 illustrates a wafer processed through a chamber employing a typical lift pin.

5 is a schematic structural diagram showing a structure of a chamber type process module employing a lift pin according to the present invention;

FIG. 6 is a perspective view illustrating a susceptor installed in a chamber for manufacturing a semiconductor and a lift pin penetrating the susceptor. FIG.

7 is a cross-sectional view taken along the line VI-VI of FIG. 6.

<Description of the symbols for the main parts of the drawings>

1: wafer 130: susceptor

130a: lift pin hole 130b: locking jaw

134: lift pin 134a: locking end

134b: protrusion

Claims (2)

A chamber; A susceptor mounted on the wafer with the wafer spaced apart from each other, vertically moving in the chamber, and having a plurality of lift pin holes penetrating up and down; A plurality of lift pins are installed to be movable vertically in the state of penetrating the plurality of lift pin holes, respectively, the hemispherical protrusions are formed on the upper surface, respectively. Semiconductor manufacturing apparatus comprising a The method according to claim 1, A locking end of an upper end of the lift pin; A semiconductor manufacturing apparatus further comprising a locking jaw at an upper end of the lift pin hole through which the locking end can be inserted, wherein the hemispherical protrusion is formed on an upper surface of the locking end.