KR102939423B1 - 개선된 패턴 프로파일 및 초점 심도(dof)를 갖는 포지티브 작용 포토레지스트 조성물 - Google Patents

개선된 패턴 프로파일 및 초점 심도(dof)를 갖는 포지티브 작용 포토레지스트 조성물

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Publication number
KR102939423B1
KR102939423B1 KR1020237026880A KR20237026880A KR102939423B1 KR 102939423 B1 KR102939423 B1 KR 102939423B1 KR 1020237026880 A KR1020237026880 A KR 1020237026880A KR 20237026880 A KR20237026880 A KR 20237026880A KR 102939423 B1 KR102939423 B1 KR 102939423B1
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South Korea
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structural formula
range
mole
component
composition
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KR1020237026880A
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English (en)
Korean (ko)
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KR20230129496A (ko
Inventor
훙-양 첸
쿤 시
춘웨이 첸
종 리
헹펭 우
Original Assignee
메르크 파텐트 게엠베하
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020237026880A 2021-01-07 2022-01-05 개선된 패턴 프로파일 및 초점 심도(dof)를 갖는 포지티브 작용 포토레지스트 조성물 Active KR102939423B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202163134608P 2021-01-07 2021-01-07
US63/134,608 2021-01-07
US202163280310P 2021-11-17 2021-11-17
US63/280,310 2021-11-17
PCT/EP2022/050108 WO2022148759A1 (en) 2021-01-07 2022-01-05 Positive-working photoresist composition with improved pattern profile and depth of focus (dof)

Publications (2)

Publication Number Publication Date
KR20230129496A KR20230129496A (ko) 2023-09-08
KR102939423B1 true KR102939423B1 (ko) 2026-03-13

Family

ID=80001573

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237026880A Active KR102939423B1 (ko) 2021-01-07 2022-01-05 개선된 패턴 프로파일 및 초점 심도(dof)를 갖는 포지티브 작용 포토레지스트 조성물

Country Status (6)

Country Link
US (1) US20240045333A1 (https=)
EP (1) EP4275093A1 (https=)
JP (1) JP7763254B2 (https=)
KR (1) KR102939423B1 (https=)
TW (1) TW202236015A (https=)
WO (1) WO2022148759A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118284852A (zh) * 2021-11-17 2024-07-02 默克专利股份有限公司 通过湿式化学蚀刻以改善金属结构制造的组合物和方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030207195A1 (en) * 2002-04-11 2003-11-06 Eilbeck J. Neville Novolak resin mixtures and photosensitive compositions comprising the same
US20100167476A1 (en) * 2008-12-29 2010-07-01 Samsung Electronics Co., Ltd. Photoresist composition and method of fabricating thin film transistor substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3434340B2 (ja) * 1994-03-29 2003-08-04 東京応化工業株式会社 高感度ポジ型ホトレジスト組成物
US5853954A (en) * 1996-12-18 1998-12-29 Clariant Finance (Bvi) Limited Fractionated novolak resin and photoresist composition therefrom
JP2002090991A (ja) * 2000-09-13 2002-03-27 Fuji Photo Film Co Ltd ポジ型レジスト組成物
WO2002031011A2 (en) * 2000-10-13 2002-04-18 Clariant International Ltd Fractionation of resins using a static mixer and a liquid-liquid centrifuge
JP3738420B2 (ja) 2001-11-16 2006-01-25 東京応化工業株式会社 ポジ型ホトレジスト組成物および傾斜インプランテーションプロセス用薄膜レジストパターンの形成方法
CN103329042B (zh) 2011-02-25 2015-12-23 住友电木株式会社 光致抗蚀剂用树脂组合物
KR102012830B1 (ko) * 2013-05-21 2019-11-05 동우 화인켐 주식회사 포지티브 포토레지스트 조성물

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030207195A1 (en) * 2002-04-11 2003-11-06 Eilbeck J. Neville Novolak resin mixtures and photosensitive compositions comprising the same
US20100167476A1 (en) * 2008-12-29 2010-07-01 Samsung Electronics Co., Ltd. Photoresist composition and method of fabricating thin film transistor substrate

Also Published As

Publication number Publication date
EP4275093A1 (en) 2023-11-15
KR20230129496A (ko) 2023-09-08
JP2024502353A (ja) 2024-01-18
US20240045333A1 (en) 2024-02-08
JP7763254B2 (ja) 2025-10-31
TW202236015A (zh) 2022-09-16
WO2022148759A1 (en) 2022-07-14

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