KR102811141B1 - 레지스트 조성물 및 레지스트 패턴 형성 방법 - Google Patents

레지스트 조성물 및 레지스트 패턴 형성 방법 Download PDF

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KR102811141B1
KR102811141B1 KR1020237019927A KR20237019927A KR102811141B1 KR 102811141 B1 KR102811141 B1 KR 102811141B1 KR 1020237019927 A KR1020237019927 A KR 1020237019927A KR 20237019927 A KR20237019927 A KR 20237019927A KR 102811141 B1 KR102811141 B1 KR 102811141B1
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KR20230098899A (ko
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도모유키 히라노
고지 요네무라
유스케 나카가와
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도오꾜오까고오교 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020237019927A 2020-12-21 2021-12-21 레지스트 조성물 및 레지스트 패턴 형성 방법 Active KR102811141B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020211619 2020-12-21
JPJP-P-2020-211619 2020-12-21
PCT/JP2021/047337 WO2022138648A1 (ja) 2020-12-21 2021-12-21 レジスト組成物及びレジストパターン形成方法

Publications (2)

Publication Number Publication Date
KR20230098899A KR20230098899A (ko) 2023-07-04
KR102811141B1 true KR102811141B1 (ko) 2025-05-21

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KR1020237019927A Active KR102811141B1 (ko) 2020-12-21 2021-12-21 레지스트 조성물 및 레지스트 패턴 형성 방법

Country Status (5)

Country Link
US (1) US20240302743A1 (https=)
JP (1) JP7542653B2 (https=)
KR (1) KR102811141B1 (https=)
CN (1) CN116583784A (https=)
WO (1) WO2022138648A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020137921A1 (ja) * 2018-12-28 2020-07-02 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び、電子デバイスの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3655030B2 (ja) 1996-12-10 2005-06-02 東京応化工業株式会社 ネガ型化学増幅型レジスト組成物
JP4152810B2 (ja) * 2003-06-13 2008-09-17 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP6159701B2 (ja) * 2013-11-29 2017-07-05 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、及び、パターン形成方法
KR102125252B1 (ko) * 2015-12-25 2020-06-22 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
JP2019070676A (ja) * 2016-03-02 2019-05-09 富士フイルム株式会社 平坦化膜の製造方法、感活性光線性または感放射線性の平坦化膜形成用組成物、平坦化膜、および、電子デバイスの製造方法
JP7111031B2 (ja) * 2018-03-23 2022-08-02 信越化学工業株式会社 感光性樹脂組成物、感光性樹脂積層体、及びパターン形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020137921A1 (ja) * 2018-12-28 2020-07-02 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び、電子デバイスの製造方法

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Publication number Publication date
CN116583784A (zh) 2023-08-11
JP7542653B2 (ja) 2024-08-30
JPWO2022138648A1 (https=) 2022-06-30
US20240302743A1 (en) 2024-09-12
WO2022138648A1 (ja) 2022-06-30
KR20230098899A (ko) 2023-07-04

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