KR102773259B1 - 플라즈마 처리 장치, 온도 제어 방법, 및 온도 제어 프로그램 - Google Patents

플라즈마 처리 장치, 온도 제어 방법, 및 온도 제어 프로그램 Download PDF

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Publication number
KR102773259B1
KR102773259B1 KR1020200053860A KR20200053860A KR102773259B1 KR 102773259 B1 KR102773259 B1 KR 102773259B1 KR 1020200053860 A KR1020200053860 A KR 1020200053860A KR 20200053860 A KR20200053860 A KR 20200053860A KR 102773259 B1 KR102773259 B1 KR 102773259B1
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South Korea
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heater
temperature
plasma
steady state
wafer
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Korean (ko)
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KR20200131168A (ko
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신스케 오카
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도쿄엘렉트론가부시키가이샤
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0202—Switches
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020200053860A 2019-05-13 2020-05-06 플라즈마 처리 장치, 온도 제어 방법, 및 온도 제어 프로그램 Active KR102773259B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2019-090851 2019-05-13
JP2019090851A JP7244348B2 (ja) 2019-05-13 2019-05-13 プラズマ処理装置、温度制御方法および温度制御プログラム

Publications (2)

Publication Number Publication Date
KR20200131168A KR20200131168A (ko) 2020-11-23
KR102773259B1 true KR102773259B1 (ko) 2025-02-25

Family

ID=73221900

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KR1020200053860A Active KR102773259B1 (ko) 2019-05-13 2020-05-06 플라즈마 처리 장치, 온도 제어 방법, 및 온도 제어 프로그램

Country Status (5)

Country Link
US (2) US11546970B2 (https=)
JP (2) JP7244348B2 (https=)
KR (1) KR102773259B1 (https=)
CN (1) CN111933508B (https=)
TW (1) TWI842882B (https=)

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WO2020081235A1 (en) * 2018-10-16 2020-04-23 Lam Research Corporation Plasma enhanced wafer soak for thin film deposition
US11488808B2 (en) * 2018-11-30 2022-11-01 Tokyo Electron Limited Plasma processing apparatus, calculation method, and calculation program
JP7244348B2 (ja) * 2019-05-13 2023-03-22 東京エレクトロン株式会社 プラズマ処理装置、温度制御方法および温度制御プログラム
JP7426915B2 (ja) * 2020-09-14 2024-02-02 東京エレクトロン株式会社 プラズマ処理装置、熱抵抗導出方法及び熱抵抗導出プログラム
JP7601511B2 (ja) * 2021-06-25 2024-12-17 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN119522475A (zh) * 2022-07-22 2025-02-25 东京毅力科创株式会社 监视方法和等离子体处理装置
TWI839989B (zh) * 2022-12-02 2024-04-21 緯創資通股份有限公司 包括監測警示模組之液冷系統、用於液冷系統之監測警示方法以及包括其之電子裝置
TW202509701A (zh) * 2023-04-17 2025-03-01 日商東京威力科創股份有限公司 電腦程式、資訊處理裝置、及資訊處理方法
KR102867331B1 (ko) * 2023-06-21 2025-10-01 주식회사 뉴파워 프라즈마 정전척에 전달되는 고주파 전력 조절을 이용한 공정 균일도 향상 장치
WO2025142536A1 (ja) * 2023-12-27 2025-07-03 東京エレクトロン株式会社 プラズマ処理装置、予測方法、予測プログラム、及び情報処理装置
CN121237701B (zh) * 2025-12-02 2026-03-06 北京航空航天大学 温度控制方法、装置、计算机设备和可读存储介质

Citations (5)

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US20070084847A1 (en) 2005-09-30 2007-04-19 Tokyo Electron Limited Stage, substrate processing apparatus, plasma processing apparatus, control method for stage, control method for plasma processing apparatus, and storage media
JP2009302390A (ja) 2008-06-16 2009-12-24 Hitachi High-Technologies Corp 試料温度の制御方法
JP2017011169A (ja) 2015-06-24 2017-01-12 東京エレクトロン株式会社 温度制御方法
JP2017228230A (ja) 2016-06-24 2017-12-28 東京エレクトロン株式会社 基板処理システムおよび温度制御方法
US20190362991A1 (en) 2018-05-24 2019-11-28 Applied Materials, Inc. Virtual sensor for spatially resolved wafer temperature control

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FR2680231B1 (fr) * 1991-08-07 1993-11-19 Nitruvid Four de type puits a chauffage par resistance pour le traitement de pieces metalliques.
US6023038A (en) * 1997-09-16 2000-02-08 Applied Materials, Inc. Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
TWI281833B (en) * 2004-10-28 2007-05-21 Kyocera Corp Heater, wafer heating apparatus and method for manufacturing heater
JP4486135B2 (ja) * 2008-01-22 2010-06-23 東京エレクトロン株式会社 温度制御機構およびそれを用いた処理装置
JP4515509B2 (ja) * 2008-03-03 2010-08-04 キヤノンアネルバ株式会社 基板表面温度計測方法、及び、これを用いた基板処理装置
JP2010050178A (ja) * 2008-08-20 2010-03-04 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP2014158009A (ja) * 2012-07-03 2014-08-28 Hitachi High-Technologies Corp 熱処理装置
JP6313983B2 (ja) * 2014-01-29 2018-04-18 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6378942B2 (ja) 2014-06-12 2018-08-22 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6479713B2 (ja) * 2016-07-11 2019-03-06 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、プログラムおよび基板処理装置
JP2018063974A (ja) * 2016-10-11 2018-04-19 東京エレクトロン株式会社 温度制御装置、温度制御方法、および載置台
JP7068971B2 (ja) * 2017-11-16 2022-05-17 東京エレクトロン株式会社 プラズマ処理装置、温度制御方法および温度制御プログラム
KR102306371B1 (ko) * 2018-11-27 2021-09-30 주식회사 히타치하이테크 플라스마 처리 장치 및 그것을 이용한 시료의 처리 방법
JP7244348B2 (ja) * 2019-05-13 2023-03-22 東京エレクトロン株式会社 プラズマ処理装置、温度制御方法および温度制御プログラム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070084847A1 (en) 2005-09-30 2007-04-19 Tokyo Electron Limited Stage, substrate processing apparatus, plasma processing apparatus, control method for stage, control method for plasma processing apparatus, and storage media
JP2009302390A (ja) 2008-06-16 2009-12-24 Hitachi High-Technologies Corp 試料温度の制御方法
JP2017011169A (ja) 2015-06-24 2017-01-12 東京エレクトロン株式会社 温度制御方法
JP2017228230A (ja) 2016-06-24 2017-12-28 東京エレクトロン株式会社 基板処理システムおよび温度制御方法
US20190362991A1 (en) 2018-05-24 2019-11-28 Applied Materials, Inc. Virtual sensor for spatially resolved wafer temperature control

Also Published As

Publication number Publication date
CN111933508A (zh) 2020-11-13
JP7507914B2 (ja) 2024-06-28
JP7244348B2 (ja) 2023-03-22
TWI842882B (zh) 2024-05-21
KR20200131168A (ko) 2020-11-23
US11546970B2 (en) 2023-01-03
TW202107610A (zh) 2021-02-16
JP2020188098A (ja) 2020-11-19
US12063717B2 (en) 2024-08-13
CN111933508B (zh) 2024-07-02
US20230105165A1 (en) 2023-04-06
US20200367320A1 (en) 2020-11-19
JP2023067998A (ja) 2023-05-16

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