KR102759032B1 - 하이-사이드 드라이버를 위한 역방향 전류 보호를 제공하는 회로 - Google Patents

하이-사이드 드라이버를 위한 역방향 전류 보호를 제공하는 회로 Download PDF

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Publication number
KR102759032B1
KR102759032B1 KR1020207025253A KR20207025253A KR102759032B1 KR 102759032 B1 KR102759032 B1 KR 102759032B1 KR 1020207025253 A KR1020207025253 A KR 1020207025253A KR 20207025253 A KR20207025253 A KR 20207025253A KR 102759032 B1 KR102759032 B1 KR 102759032B1
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South Korea
Prior art keywords
coupled
current
transistor
circuit
voltage rail
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Korean (ko)
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KR20200125617A (ko
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스리 나바니다크리시나 이스와란
티모시 폴 두리예
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텍사스 인스트루먼츠 인코포레이티드
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3022—CMOS common source output SEPP amplifiers
    • H03F3/3028—CMOS common source output SEPP amplifiers with symmetrical driving of the end stage
    • H03F3/303—CMOS common source output SEPP amplifiers with symmetrical driving of the end stage using opamps as driving stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B15/00—Suppression or limitation of noise or interference
    • H04B15/005—Reducing noise, e.g. humm, from the supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Protection Of Static Devices (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020207025253A 2018-03-06 2019-03-05 하이-사이드 드라이버를 위한 역방향 전류 보호를 제공하는 회로 Active KR102759032B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/913,465 2018-03-06
US15/913,465 US10804691B2 (en) 2018-03-06 2018-03-06 Circuit providing reverse current protection for high-side driver
PCT/US2019/020662 WO2019173275A1 (en) 2018-03-06 2019-03-05 Circuit providing reverse current protection for high-side driver

Publications (2)

Publication Number Publication Date
KR20200125617A KR20200125617A (ko) 2020-11-04
KR102759032B1 true KR102759032B1 (ko) 2025-01-23

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Family Applications (1)

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KR1020207025253A Active KR102759032B1 (ko) 2018-03-06 2019-03-05 하이-사이드 드라이버를 위한 역방향 전류 보호를 제공하는 회로

Country Status (6)

Country Link
US (2) US10804691B2 (https=)
EP (1) EP3763010B1 (https=)
JP (1) JP7251015B2 (https=)
KR (1) KR102759032B1 (https=)
CN (1) CN111788750B (https=)
WO (1) WO2019173275A1 (https=)

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* Cited by examiner, † Cited by third party
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US10784917B2 (en) * 2018-11-27 2020-09-22 Texas Instruments Incorporated PSI5 base current sampling in synchronous mode
US11598794B2 (en) * 2020-07-22 2023-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Power detection circuit
CN114552954B (zh) * 2020-11-20 2025-07-01 力智电子股份有限公司 具有电流感测的电源开关电路
KR20240029643A (ko) 2022-08-26 2024-03-06 (주) 번영 자기베어링용 전류드라이버의 파손 방지를 위한 보호로직
CN118174260B (zh) * 2024-04-19 2024-08-09 希荻微电子集团股份有限公司 接地系统及其控制方法、芯片与芯片封装件
CN118713651B (zh) * 2024-08-27 2024-11-08 成都芯翼科技有限公司 一种can总线温度抑制和防倒灌的电路

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US5627460A (en) * 1994-12-28 1997-05-06 Unitrode Corporation DC/DC converter having a bootstrapped high side driver
US5789951A (en) * 1997-01-31 1998-08-04 Motorola, Inc. Monolithic clamping circuit and method of preventing transistor avalanche breakdown
JP4546320B2 (ja) * 2005-04-19 2010-09-15 株式会社リコー 定電圧電源回路及び定電圧電源回路の制御方法
US7616464B2 (en) * 2005-08-16 2009-11-10 Astec International Limited Reverse current control system for a power converter
US8068319B1 (en) * 2006-09-14 2011-11-29 Marvell International Ltd. Circuits, systems, algorithms and methods for ESD protection
US7619864B1 (en) * 2007-04-04 2009-11-17 National Semiconductor Corporation Regulator short-circuit protection circuit and method
DE102008005687A1 (de) * 2008-01-23 2009-08-06 Siemens Aktiengesellschaft Steuereinrichtung zum sicheren Wiedereinschalten eines Fehlerstromschutzschalters
JP2009295556A (ja) * 2008-06-09 2009-12-17 Ushio Inc 放電ランプ装置
US8830644B2 (en) 2009-04-28 2014-09-09 Semiconductor Components Industries, Llc Method for providing over current protection and circuit
US9154126B2 (en) * 2010-10-14 2015-10-06 Nxp B.V. High voltage output driver
US8421540B1 (en) * 2011-06-07 2013-04-16 Cirrus Logic, Inc. Method and apparatus for run-time short circuit protection for amplifiers
US9192014B2 (en) * 2011-07-19 2015-11-17 Nxp B.V. LED short circuit protection
US9007951B2 (en) * 2011-10-14 2015-04-14 Infineon Technologies Ag Self synchronizing data communication method and device
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US9054695B2 (en) * 2013-10-01 2015-06-09 Texas Instruments Incorporated Technique to realize high voltage IO driver in a low voltage BiCMOS process
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KR102275497B1 (ko) 2014-10-20 2021-07-09 삼성전자주식회사 전원 경로 제어기를 포함하는 시스템 온 칩 및 전자 기기
DE102014222479A1 (de) * 2014-11-04 2016-05-04 Robert Bosch Gmbh Überprüfungsvorrichtung für Datenaufbereitungseinrichtung
KR102492494B1 (ko) * 2014-12-09 2023-01-30 인피니언 테크놀로지스 오스트리아 아게 전력 트랜지스터들을 위한 조절된 하이 사이드 게이트 드라이버 회로
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Also Published As

Publication number Publication date
CN111788750B (zh) 2022-05-06
US20190280472A1 (en) 2019-09-12
WO2019173275A1 (en) 2019-09-12
KR20200125617A (ko) 2020-11-04
JP2021516525A (ja) 2021-07-01
US20200412121A1 (en) 2020-12-31
EP3763010A4 (en) 2021-04-28
JP7251015B2 (ja) 2023-04-04
US10804691B2 (en) 2020-10-13
CN111788750A (zh) 2020-10-16
US11368009B2 (en) 2022-06-21
EP3763010B1 (en) 2023-07-26
EP3763010A1 (en) 2021-01-13

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