KR102728362B9 - 산화은/β-산화갈륨 이종접합 기반 태양광 블라인드 광검출기 및 그 제조 방법 - Google Patents
산화은/β-산화갈륨 이종접합 기반 태양광 블라인드 광검출기 및 그 제조 방법Info
- Publication number
- KR102728362B9 KR102728362B9 KR1020220120023A KR20220120023A KR102728362B9 KR 102728362 B9 KR102728362 B9 KR 102728362B9 KR 1020220120023 A KR1020220120023 A KR 1020220120023A KR 20220120023 A KR20220120023 A KR 20220120023A KR 102728362 B9 KR102728362 B9 KR 102728362B9
- Authority
- KR
- South Korea
- Prior art keywords
- ag2o
- ga2o3
- fabricating
- same
- based solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202380023471.1A CN118749137A (zh) | 2022-02-23 | 2023-02-23 | 基于氧化银/β-氧化镓异质结的日盲光电探测器及制造其的方法 |
| US18/840,801 US20250194266A1 (en) | 2022-02-23 | 2023-02-23 | Silver oxide/b-gallium oxide heterojunction-based solar blind photodetector and method manufacturing same |
| PCT/KR2023/002577 WO2023163517A1 (ko) | 2022-02-23 | 2023-02-23 | 산화은/β-산화갈륨 이종접합 기반 태양광 블라인드 광검출기 및 그 제조 방법 |
| EP23760391.5A EP4485551A1 (en) | 2022-02-23 | 2023-02-23 | Silver oxide/b-gallium oxide heterojunction-based solar blind photodetector and method for manufacturing same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20220023598 | 2022-02-23 | ||
| KR1020220023598 | 2022-02-23 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| KR20230127127A KR20230127127A (ko) | 2023-08-31 |
| KR102728362B1 KR102728362B1 (ko) | 2024-11-12 |
| KR102728362B9 true KR102728362B9 (ko) | 2025-05-12 |
Family
ID=87847727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020220120023A Active KR102728362B1 (ko) | 2022-02-23 | 2022-09-22 | 산화은/β-산화갈륨 이종접합 기반 태양광 블라인드 광검출기 및 그 제조 방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR102728362B1 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102726367B1 (ko) * | 2023-12-15 | 2024-11-04 | 한국세라믹기술원 | 도핑 산화갈륨 펠릿, 이의 제조 방법 및 이를 이용하여 제조된 도핑 단결정 |
| KR102909668B1 (ko) | 2024-12-19 | 2026-01-09 | 파워큐브세미(주) | 산화갈륨 이종접합 기반 duv 센서 및 그 제조 방법 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018103647A1 (zh) * | 2016-12-08 | 2018-06-14 | 西安电子科技大学 | 基于Ga2O3材料的紫外光电探测器的制备方法 |
| KR101946205B1 (ko) | 2018-07-16 | 2019-04-17 | 아주대학교산학협력단 | 태양광-블라인드 uv-c 광센서 및 이의 제조 방법 |
-
2022
- 2022-09-22 KR KR1020220120023A patent/KR102728362B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20230127127A (ko) | 2023-08-31 |
| KR102728362B1 (ko) | 2024-11-12 |
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Legal Events
| Date | Code | Title | Description |
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| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20220922 |
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| PA0201 | Request for examination | ||
| PN2301 | Change of applicant |
Patent event date: 20230522 Comment text: Notification of Change of Applicant Patent event code: PN23011R01D |
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| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20240121 Patent event code: PE09021S01D |
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| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20240926 |
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| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20241106 Patent event code: PR07011E01D |
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| PR1002 | Payment of registration fee |
Payment date: 20241106 End annual number: 3 Start annual number: 1 |
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