KR102691905B1 - Methods of operating the spatial deposition tool - Google Patents

Abstract

Apparatus and methods for processing one or more wafers are described. A spatial deposition tool includes a plurality of substrate support surfaces on a substrate support assembly, and a plurality of spatially separated and isolated processing stations. Spatially separated and isolated processing stations have independently controlled temperatures, process gas types, and gas flows. In some embodiments, process gases for one or multiple process stations are activated using plasma sources. Operation of the spatial tool includes rotating the substrate assembly in a first direction, and rotating the substrate assembly in a second direction, and rotating the substrate assembly in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s). It involves repeating rotations in two directions.

Description

Methods of operating the spatial deposition tool

This disclosure relates generally to apparatus for depositing thin films and methods for processing wafers. In particular, the present disclosure relates to a processing chamber having a plurality of movable heated wafer supports and spatially separated processing stations, and spatially separated isolated processing stations.

There are a number of potential problems and difficulties with current atomic layer deposition (ALD) processes. Many ALD chemicals (eg, precursors and reactants) are “incompatible,” meaning that they cannot be mixed together. When incompatible chemicals are mixed, a chemical vapor deposition (CVD) process may occur instead of an ALD process. CVD processes generally have less thickness control than ALD processes and/or can result in the generation of gaseous particles that can cause defects in the resulting device. For a typical time-domain ALD process where a single reactive gas is flowed into the processing chamber at a time, long purge/pump discharge times occur to prevent chemicals from mixing into the gas phase. A spatial ALD chamber can move one or more wafer(s) from one environment to a second environment faster than a time-domain ALD chamber can pump/purge, resulting in higher throughput.

The semiconductor industry requires high quality films that can be deposited at lower temperatures (eg, below 350° C.). To deposit high quality films at temperatures below those at which films would be deposited in a heat-only process, alternative energy sources are needed. Plasma solutions can be used to provide additional energy to the ALD film in the form of ions and radicals. Obtaining sufficient energy on vertical sidewall ALD films is a challenge. Ions are typically accelerated through a sheath above the wafer in a direction perpendicular to the wafer surface. Therefore, due to the ions moving parallel to the vertical surfaces, the ions provide energy to the horizontal ALD film surfaces but an insufficient amount of energy to the vertical surfaces.

Some process chambers include capacitively coupled plasma (CCP). CCP is generated between the top electrode and the wafer, commonly known as CCP parallel plate plasma. CCP parallel plate plasma produces very high ion energies across the two sheaths and therefore performs very poorly on vertical sidewall surfaces. By spatially moving the wafer into an environment optimized to produce a wider angular distribution and ion flux with lower energies and higher radical flux to the wafer surface, better vertical ALD film properties can be achieved. Such plasma sources include microwaves, inductively coupled plasma (ICP), or higher frequency CCP solutions with third electrodes (i.e., the plasma is generated between two electrodes on the wafer without using the wafer as the main electrode). ) includes.

Current spatial ALD processing chambers rotate multiple wafers at a constant speed on heated circular platens that move the wafers from one processing environment to an adjacent environment. Different processing environments create separation of incompatible gases. However, current spatial ALD processing chambers are unable to optimize the plasma environment for plasma exposure, resulting in non-uniformity, plasma damage, and/or processing flexibility issues.

For example, process gases flow across the wafer surface. Because the wafer rotates about an offset axis, the leading and trailing edges of the wafer have different flow streamlines. Additionally, there is also a flow difference between the inner and outer diameter edges of the wafer, caused by faster velocities at the outer edge and slower at the inner edge. These flow irregularities can be optimized but not eliminated. Plasma damage can occur when a wafer is exposed to non-uniform plasma. The constant speed rotation of these spatial processing chambers requires the wafers to move in and out of the plasma, so that while some portions of the wafer are exposed to the plasma, other areas are outside the plasma. Additionally, it may be difficult to vary exposure times in the spatial processing chamber due to the constant rotation rate. As an example, the process uses a 0.5 second exposure to gas A followed by a 1.5 second plasma treatment. Since the tool runs at a constant rotational speed, the only way to do this is to make the plasma environment three times larger than the gas A input environment. If another process with identical gas A and plasma times is to be performed, changes to the hardware will be required. Current spatial ALD chambers can only slow down or accelerate rotation speed and cannot adjust time differences between steps without changing the chamber hardware to smaller or larger regions.

In current spatial ALD deposition tools (or other spatial processing chambers) where the main deposition steps occur while the wafer is at rest in a processing station simulating a single wafer chamber, the method of operation is often to process the wafer with more than one of the same station type. This involves moving the wafer, resulting in leading and trailing edge differences on the wafers due to different parts of the wafer being exposed to different environments. Accordingly, a need exists in the art for improved deposition apparatus and methods.

One or more embodiments of the present disclosure relate to a method of operating a processing chamber. In one or more embodiments, the method includes providing a processing chamber comprising x spatially separated and isolated processing stations, wherein the processing chambers have a processing chamber temperature, and each processing station independently has a processing station temperature. , the processing chamber temperature is different from the processing station temperatures; A substrate support assembly having a plurality of substrate support surfaces aligned with x spatially separated isolated processing stations, such that each substrate support surface rotates (360/x) degrees in a first direction relative to the adjacent substrate support surface. Step of rotating rx-1) times - r is an integer of 1 or more -; and rotating the substrate support assembly (rx-1) times such that each substrate support surface rotates (360/x) degrees in the second direction with respect to the adjacent substrate support surface.

In one or more embodiments, the method includes a processing chamber having at least two different processing stations and a substrate support assembly including a first substrate support surface, a second substrate support surface, a third substrate support surface, and a fourth substrate support surface. providing: each substrate support surface aligned with the processing station in an initial position; exposing a first wafer on a first substrate support surface to first process conditions; rotating the substrate support assembly in a first direction to move the first wafer to an initial position on the second substrate support surface; exposing the first wafer to second process conditions; rotating the substrate support assembly in a first direction to move the first wafer to an initial position on the third substrate support surface; exposing the first wafer to third process conditions; rotating the substrate support assembly in a first direction to move the first wafer to an initial position on the fourth substrate support surface; exposing the first wafer to fourth process conditions; rotating the substrate support assembly in a second direction to move the first wafer to an initial position on the third substrate support surface; exposing the first wafer to third process conditions; rotating the substrate support assembly in a second direction to move the first wafer to an initial position on the second substrate support surface; exposing the first wafer to second process conditions; rotating the substrate support assembly in a second direction to move the first wafer to an initial position on the first substrate support surface; and exposing the first wafer to first process conditions.

Additional embodiments of the present disclosure relate to methods of forming films. In one or more embodiments, a method of forming a film includes loading at least one wafer onto x substrate support surfaces of a substrate support assembly, each of the substrate support surfaces aligned with x spatially separated isolated processing stations. became -; rotating the substrate support assembly (rx-1) times in a first direction such that each substrate support surface rotates (360/x) degrees relative to the adjacent substrate support surface, where r is an integer greater than or equal to 1; rotating the substrate support assembly (rx-1) times in a second direction such that each substrate support surface rotates (360/x) degrees relative to the adjacent substrate support surface; and at each processing station, exposing the top surface of at least one wafer to process conditions to form a film having a substantially uniform thickness.

One or more embodiments of the present disclosure relate to a method of operating a processing chamber. In one or more embodiments, the method includes providing a processing chamber comprising x spatially separated and isolated processing stations, wherein the processing chambers have a processing chamber temperature, and each processing station independently has a processing station temperature. , the processing chamber temperature is different from the processing station temperatures; A substrate support assembly having a plurality of substrate support surfaces aligned with x spatially separated isolated processing stations, each substrate support surface being rotated (360/x) degrees in a first direction relative to the adjacent substrate support surface. Step of rotating times - r is an integer greater than or equal to 1; and rotating the substrate support assembly rx times such that each substrate support surface rotates (360/x) degrees in the second direction with respect to the adjacent substrate support surface.

Additional embodiments of the present disclosure relate to methods of operating a processing chamber. In one or more embodiments, the method includes providing a processing chamber comprising x spatially separated and isolated processing stations, wherein the processing chambers have a processing chamber temperature, and each processing station independently has a processing station temperature. , the processing chamber temperature is different from the processing station temperatures; rotating a substrate support assembly having a plurality of substrate support surfaces aligned with x spatially separated isolated processing stations in a first direction (360/x) degrees relative to adjacent substrate support surfaces; rotating the substrate support assembly (360/x) degrees in a second direction relative to the adjacent substrate surface, the rotations in the first and second directions being repeated n times, n being an integer greater than or equal to 1; rotating the substrate support assembly two times (360/x) degrees in a first direction; rotating the substrate support assembly (360/x) degrees in a first direction and then rotating the substrate support assembly (360/x) degrees in a second direction—the rotations in the first and second directions are repeated m times; , m is an integer greater than or equal to 1 -; and rotating the substrate support assembly (360/x) degrees in the second direction.

In such a way that the above-mentioned features of the present disclosure can be understood in detail, a more specific description of the present disclosure briefly summarized above may be made with reference to the embodiments, some of which are shown in the accompanying drawings. It is exemplified in the fields. However, it should be noted that the accompanying drawings illustrate only exemplary embodiments of the present disclosure and should not be considered to limit the scope of the present disclosure, as the present disclosure may permit other equally effective embodiments. Because you can.
1 depicts a cross-sectional isometric view of a processing chamber according to one or more embodiments of the present disclosure.
2 shows a cross-sectional view of a processing chamber according to one or more embodiments of the present disclosure.
3 shows a bottom parallel projection of a support assembly according to one or more embodiments of the present disclosure.
4 shows a top parallel projection view of a support assembly according to one or more embodiments of the present disclosure.
5 shows a top parallel projection view of a support assembly according to one or more embodiments of the present disclosure.
Figure 6 shows a side cross-sectional view of a support assembly according to one or more embodiments of the present disclosure.
7 shows a partial side cross-sectional view of a support assembly according to one or more embodiments of the present disclosure.
8 shows a partial side cross-sectional view of a support assembly according to one or more embodiments of the present disclosure.
9 shows a partial side cross-sectional view of a support assembly according to one or more embodiments of the present disclosure.
Figure 10A is a top isometric view of a support plate according to one or more embodiments of the present disclosure.
Figure 10B is a side cross-sectional view of the support plate of Figure 10A taken along line 10B-10B'.
Figure 11A is a bottom isometric view of a support plate according to one or more embodiments of the present disclosure.
Figure 11B is a side cross-sectional view of the support plate of Figure 11A taken along line 11B-11B'.
Figure 12A is a bottom isometric view of a support plate according to one or more embodiments of the present disclosure.
Figure 12B is a side cross-sectional view of the support plate of Figure 12A taken along line 12B-12B'.
Figure 13 is a cross-sectional isometric view of a top plate of a processing chamber according to one or more embodiments of the present disclosure.
14 is an exploded cross-sectional view of a process station according to one or more embodiments of the present disclosure.
15 is a schematic cross-sectional side view of a top plate for a processing chamber according to one or more embodiments of the present disclosure.
Figure 16 is a partial side cross-sectional view of a process station in a processing chamber according to one or more embodiments of the present disclosure.
17 is a schematic representation of a processing platform according to one or more embodiments of the present disclosure.
18A-18I show schematic diagrams of process station configurations of a processing chamber according to one or more embodiments of the present disclosure.
19A and 19B show schematic representations of a process according to one or more embodiments of the present disclosure.
Figure 20 shows a schematic representation of a cross-section of a support assembly according to one or more embodiments of the present disclosure.
Figure 21 shows a process flow diagram of one embodiment of a method of forming a thin film, according to embodiments described herein.
Figure 22 shows a schematic representation of a process chamber and process flow, according to one or more embodiments of the present disclosure.
Figure 23 shows a process flow diagram of one embodiment of a method of forming a thin film, according to embodiments described herein.
Figure 24 shows a schematic representation of a process chamber and process flow, according to one or more embodiments of the present disclosure.
Figure 25 shows a process flow diagram of one embodiment of a method of forming a thin film, according to embodiments described herein.
Figure 26 shows a schematic representation of a process chamber and process flow, according to one or more embodiments of the present disclosure.

Before describing some example embodiments of the present disclosure, it should be understood that the disclosure is not limited to the details of construction or process steps described in the description below. The present disclosure is capable of other embodiments and of being practiced or carried out in various ways.

As used herein, “substrate” refers to any substrate or material surface formed on a substrate on which a film treatment is performed during the manufacturing process. For example, substrate surfaces on which processing can be performed include, depending on the application, silicon, silicon oxide, strained silicon, silicon on insulator (SOI), carbon doped silicon oxides, amorphous silicon, Doped materials such as silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials. Substrates include, but are not limited to, semiconductor wafers. Substrates may be exposed to a pretreatment process to polish, etch, reduce, oxidize, hydroxylate, anneal, and/or bake the substrate surface. In the present disclosure, in addition to film processing directly on the surface of the substrate itself, any of the film processing steps disclosed may also include an underlying layer formed on the substrate, as disclosed in more detail below. The term “substrate surface” is intended to include such underlying layers as the context indicates. Thus, for example, when a film/layer or partial film/layer is deposited on a substrate surface, the exposed surface of the newly deposited film/layer becomes the substrate surface.

As used in this specification and the appended claims, the terms “precursor,” “reactant,” “reactive gas,” and the like refer to any gaseous species capable of reacting with a substrate surface or a film formed on the substrate surface. are used interchangeably.

One or more embodiments of the present disclosure utilize spatial separation between two or more processing environments. Some embodiments advantageously provide devices and methods for maintaining separation of incompatible gases. Some embodiments advantageously provide apparatus and methods including optimizable plasma processing. Some embodiments advantageously provide devices and methods that allow for differentiated heat input environments, differentiated plasma processing environments, and other environments.

One or more embodiments of the present disclosure relate to processing chambers having four spatially separated processing environments, also referred to as processing stations. Some embodiments have more than 4, and some embodiments have less than 4. The processing environments may be mounted on the same plane with the wafer(s) moving in a horizontal plane. Process environments are arranged in a circular arrangement. A rotatable structure with one to four (or more) individual wafer heaters mounted on top moves the wafers in a circular path with a diameter similar to the process environments. Each heater may be temperature controlled and may have one or multiple concentric zones. For wafer loading, the rotatable structure can be lowered to allow the vacuum robot to pick the finished wafers and place the unprocessed wafers (at the lower Z position) on lift pins positioned above each wafer heater. there is. In operation, each wafer can be in an independent environment until the end of the process, and then the rotatable structure is rotated (90° for 4 stations, 120° for 3 stations) to accommodate the heaters. The wafers on the wafers can be moved to the next environment for processing.

Some embodiments of the present disclosure advantageously provide spatial separation for ALD using incompatible gases. Some embodiments allow for higher throughput and tool resource utilization than traditional time-domain or spatial process chambers. Each process environment may operate at different pressures. As the heaters rotate, each heater has Z-direction movement so that it can be sealed in the chamber.

Some embodiments advantageously provide plasma environments that may include one or more of microwaves, ICP, parallel plate CCP, or three-electrode CCP. The entire wafer can be immersed in the plasma, eliminating plasma damage from uneven plasma across the wafer.

In some embodiments, a small gap between the showerhead and the wafer may be used to increase input gas utilization and cycle time rates. Precise showerhead temperature control and high operating range (up to 230 °C). Without being bound by theory, it is believed that the closer the showerhead temperature is to the wafer temperature, the better the wafer temperature uniformity.

Showerheads include small gas holes (<200 μm), a large number of gas holes (thousands to over 10 million), and a cyclically supplied gas distribution inside the showerhead that uses a small distribution volume to increase velocity. can do. Small size and large numbers of gas holes can be created by laser drilling or dry etching. When the wafer is close to the showerhead, there is turbulence experienced by the gas moving toward the wafer through the vertical holes. Some embodiments use a large number of holes spaced closely together to allow slower velocity gases through the showerhead to achieve uniform distribution over the wafer surface.

Some embodiments relate to integrated processing platforms using multiple spatially separated processing stations (chambers) on a single tool. A processing platform may have various chambers capable of performing different processes.

Some embodiments of the present disclosure relate to apparatus and methods for moving wafer(s) attached to wafer heater(s) from one environment to another. Rapid movement may be made possible by electrostatically chucking (or clamping) the wafer(s) to heater(s). Movement of the wafers may be a linear or circular motion.

Some embodiments of the present disclosure relate to methods of processing one or more substrates. Examples include running one wafer on one heater over multiple different sequential environments that are spatially separated; Running two wafers on two wafer heaters in three environments (two identical environments and one different environment between two similar environments); wafer 1 undergoes environment A followed by B and repeat, while wafer 2 undergoes environment B followed by A and repeat; One environment is left idle (without wafers); Running two wafers in two first environments and two second environments - both wafers experiencing the same environments at the same time (i.e. both wafers are in A, then both move to B) ) ―; 4 wafers for 2 A and 2 B environments; and two wafers being processed in A's while another two wafers are being processed in B's. In some embodiments, wafers are repeatedly exposed to environment A and environment B, and then exposed to a third environment located in the same chamber.

In some embodiments, wafers move through a plurality of chambers for processing, where at least one of the chambers performs sequential processing using a plurality of spatially separated environments within the same chamber.

Some embodiments relate to a device having spatially separated processing environments within the same chamber, where the environments are at significantly different pressures (e.g., one at <100 mT and the other at >3T). In some embodiments, the heater rotation robot moves in the z-axis to seal each wafer/heater to spatially separate environments.

Some embodiments include a structure built over the chamber with a vertical structural member that exerts an upward force on the center of the chamber lid to eliminate deflection caused by atmospheric pressure on the top side and vacuum on the other side. The magnitude of the force in the above structure can be mechanically adjusted based on the deflection of the top plate. Force adjustment can be done automatically, using feedback circuits and force transducers, or manually, for example using screws that can be turned by the operator.

One or more embodiments of the present disclosure relate to processing chambers having at least two spatially separated processing environments, also referred to as processing stations. Some embodiments have more than two processing stations, and some embodiments have more than four processing stations. The processing environments may be mounted on the same plane with the wafer(s) moving in a horizontal plane. Process environments are arranged in a circular arrangement. A rotatable structure with one to four (or more) individual wafer heaters mounted on top moves the wafers in a circular path with a diameter similar to the process environments. Each heater may be temperature controlled and may have one or multiple concentric zones. For wafer loading, the rotatable structure can be lowered to allow the vacuum robot to pick the finished wafers and place the unprocessed wafers (at the lower Z position) on lift pins positioned above each wafer heater. there is. In operation, each wafer can be in an independent environment until the end of the process, and then the rotatable structure is rotated (90° for 4 stations, 120° for 3 stations) to accommodate the heaters. The wafers on the wafers can be moved to the next environment for processing. In one or more embodiments, the main deposition steps occur when the wafer is at rest in a processing station simulating a single wafer chamber.

In a spatial ALD deposition tool (or other spatial processing chamber), a wafer is moved into a first processing station and then subsequently to a second processing station. In some cases, the first and second processing stations are identical (i.e., equal), resulting in lack of uniformity in film thickness and deposition characteristics of the films (e.g., refractive index, wet etch rate, in-plane displacement, etc.) leads to lack of uniformity. Additionally, the sequence of moving from one processing station to the next results in leading and trailing edge differences on the wafers due to different portions of the wafer being exposed to different processing environments at the station.

The most obvious way to operate a spatial deposition tool is to simply move it back and forth between two separate processing stations. However, moving between more than two processing stations involves rotating the connections for electricity, water, and gases, and aligning each processing station with each wafer/substrate support surface (aligning them at any position). These tolerances pose challenges such as being more difficult than simply aligning each pedestal to two processing stations.

Additionally, during conventional operation, when a wafer is loaded on a substrate support and moved from a first processing station to a second processing station and then back to the first processing station, all portions of the wafer on the substrate support are simultaneously in the same environment. It has been observed that this will not be the case, resulting in differences between the leading and trailing edges.

In one or more embodiments, a wafer is loaded on a substrate support and moved in a first direction from a first processing station to a second processing station, back to the first processing station, and then between the two types of processing stations. To average the time, it is moved in the second direction back to the second processing station and then to the first processing station. During such movements, it was observed that the average for two of the wafers was different than that for the other two wafers (e.g., if hot/cold temperatures were present, two wafers would have high edges and low centers, whereas , the other two wafers would have had low edges and high centers). In one or more examples, it was surprisingly found that only averaging across (at least) four processing stations was found to achieve a reasonable average with similar profiles on all wafers. Accordingly, in one or more embodiments, the sequence of movements between processing stations is advantageously such that all parts of the wafer are simultaneously exposed to the same environment (e.g., temperature, pressure, reactive gases, etc.) during movements between the processing stations. Optimized to minimize the effects of not being in.

1 and 2 illustrate a processing chamber 100 according to one or more embodiments of the present disclosure. 1 shows a processing chamber 100 illustrated as a cross-sectional isometric view, according to one or more embodiments of the present disclosure. 2 shows a cross-section of a processing chamber 100 according to one or more embodiments of the present disclosure. Accordingly, some embodiments of the present disclosure relate to processing chambers 100 including a support assembly 200 and a top plate 300 .

Processing chamber 100 has a housing 102 having walls 104 and a bottom 106 . Housing 102, together with top plate 300, defines an interior volume 109, also referred to as the processing volume.

Processing chamber 100 includes a plurality of processing stations 110 . Processing stations 110 are located within the interior volume 109 of the housing 102 and are positioned in a circular arrangement around the axis of rotation 211 of the support assembly 200. Each processing station 110 includes a gas injector 112 having a front face 114 . In some embodiments, the front surfaces 114 of each of the gas injectors 112 are substantially coplanar. Processing stations 110 are defined as areas where processing can occur. For example, processing station 110 may be defined by a substrate support surface 231 of heaters 230, and a front surface 114 of gas injectors 112, as described below.

Processing stations 110 may be configured to perform any suitable process and provide any suitable process conditions. The type of gas injector 112 used will depend, for example, on the type of process being performed and the type of showerhead or gas injector. For example, processing station 110 configured to operate as an atomic layer deposition apparatus may have a showerhead or vortex type gas injector. On the other hand, processing station 110 configured to operate as a plasma station may have one or more electrode and/or ground plate configurations for generating a plasma while causing plasma gas to flow toward the wafer. The embodiment illustrated in FIG. 2 has a different type of processing station 110 on the left side of the figure (processing station 110a) than on the right side of the figure (processing station 110b). Suitable processing stations 110 include, but are not limited to, heat treatment stations, microwave plasma, three-electrode CCP, ICP, parallel plate CCP, UV exposure, laser processing, pumping chambers, annealing stations, and metrology stations. No.

3-6 illustrate support assemblies 200 according to one or more embodiments of the present disclosure. Support assembly 200 includes a rotatable central base 210. Rotatable central base 210 may have a symmetrical or non-symmetrical shape and defines an axis of rotation 211 . The rotation axis 211 extends in a first direction, as can be seen in FIG. 6 . The first direction may be referred to as a vertical direction or along the z-axis, although it will be understood that use of the term “vertical” in this manner is not limited to a direction perpendicular to the pull of gravity.

Support assembly 200 includes at least two support arms 220 connected to and extending from a central base 210 . The support arms 220 have an inner end 221 and an outer end 222. The inner end 221 contacts the central base 210 so that the support arms 220 also rotate when the central base 210 rotates about the axis of rotation 211 . Support arms 220 may be connected to central base 210 at inner end 221 by fasteners (eg, bolts) or by being formed integrally with central base 210 .

In some embodiments, the support arms 220 have one of the inner ends 221 and the outer ends 222 on the same support arm 220. It extends orthogonally to the axis of rotation 211 so that one is farther from the axis of rotation 211 than the other. In some embodiments, the inner end 221 of the support arm 220 is closer to the axis of rotation 211 than the outer end 222 of the same support arm 220.

The number of support arms 220 of support assembly 200 can vary. In some embodiments, there are at least two support arms 220, at least three support arms 220, at least four support arms 220, or at least five support arms 220. In some embodiments, there are three support arms 220. In some embodiments, there are four support arms 220. In some embodiments, there are five support arms 220. In some embodiments, there are six support arms 220.

Support arms 220 may be arranged symmetrically around central base 210 . For example, in a support assembly 200 having four support arms 220, each of the support arms 220 is positioned at 90° intervals around the central base 210. In the support assembly 200 with three support arms 220, the support arms 220 are positioned at 120° intervals around the central base 210. Stated differently, in embodiments where there are four support arms 220 , the support arms are arranged to provide four-fold symmetry about the axis of rotation 211 . In some embodiments, support assembly 200 has n support arms 220 , where n support arms 220 are arranged to provide n-fold symmetry about axis of rotation 211 .

Heater 230 is located at the outer end 222 of the support arms 220. In some embodiments, each support arm 220 has a heater 230. The centers of the heaters 230 are located at a certain distance from the rotation axis 211 so that the heaters 230 move in a circular path when the central base 210 rotates.

Heaters 230 have a support surface 231 capable of supporting a wafer. In some embodiments, heater 230 support surfaces 231 are substantially coplanar. As used in this way, “substantially coplanar” means that the planes formed by individual support surfaces 231 are ±5°, ±4° relative to the planes formed by other support surfaces 231. , means within ±3°, ±2°, or ±1°.

In some embodiments, heaters 230 are located directly on the outer end 222 of the support arms 220. In some embodiments, as illustrated in the figures, heaters 230 are raised above the outer end 222 of support arms 220 by heater standoffs 234. Heater standoffs 234 can be of any size and length to increase the height of heaters 230 .

In some embodiments, a channel 236 is formed in one or more of the central base 210, support arms 220, and/or heater standoffs 234. Channel 236 may be used to route electrical connections or provide gas flow.

The heaters may be of any suitable type known to those skilled in the art. In some embodiments, the heater is a resistive heater having one or more heating elements within the heater body.

Heaters 230 in some embodiments include additional components. For example, the heaters may include an electrostatic chuck. The electrostatic chuck may include various wires and electrodes so that the wafer positioned on the heater support surface 231 can be held in place while the heater is moved. This allows the wafer to be chucked on a heater at the beginning of the process and remain in the same position on the same heater while being moved to different process zones. In some embodiments, wires and electrodes are routed through channels 236 of support arms 220. Figure 7 shows an enlarged view of the portion of support assembly 200 where channels 236 are shown. Channels 236 extend along support arms 220 and heater standoffs 234. The first electrode 251a and the second electrode 251b are in electrical communication with the heater 230 or with a component (eg, a resistive wire) inside the heater 230. The first wire 253a is connected to the first electrode 251a at the first connector 252a. The second wire 253b is connected to the second electrode 251b in the second connector 252b.

In some embodiments, a temperature measurement device (e.g., a pyrometer, thermistor, thermocouple) is positioned within channel 236 to measure one or more of the heater 230 temperature or the temperature of the substrate on heater 230. In some embodiments, control and/or measurement wires for the temperature measurement device are routed through channel 236. In some embodiments, one or more temperature measurement devices are positioned within processing chamber 100 to measure the temperature of heaters 230 and/or the wafer on heaters 230 . Suitable temperature measurement devices are known to those skilled in the art and include, but are not limited to, optical pyrometers and contact thermocouples.

Wires may be routed through support arms 220 and support assembly 200 to connect to a power source (not shown). In some embodiments, connection to a power source allows continuous rotation of support assembly 200 without tangling or breaking wires 253a, 253b. In some embodiments, as shown in FIG. 7 , first wire 253a and second wire 253b extend along channel 236 of support arm 220 to central base 210 . At the central base 210, the first wire 253a is connected to the central first connector 254a, and the second wire 253b is connected to the central second connector 254b. Central connectors 254a, 254b may be part of connection plate 258, such that power or electronic signals may pass through central connectors 254a, 254b. In the illustrated embodiment, support assembly 200 can rotate continuously without twisting or breaking the wires because they terminate at the central base 210. The second connection is on the opposite side of the connection plate 258 (outside the processing chamber).

In some embodiments, the wires are connected directly to a power source or electrical component external to the processing chamber through channel 236. In these types of embodiments, the wires have sufficient slack to allow the support assembly 200 to be rotated a limited amount without kinking or breaking the wires. In some embodiments, support assembly 200 is rotated no more than about 1080°, 990°, 720°, 630°, 360°, or 270° before the direction of rotation is reversed. This allows the heaters to be rotated through each of the stations without breaking the wires.

Referring again to Figures 3-6, heater 230 and support surface 231 may include one or more gas outlets to provide a flow of backside gas. This may aid removal of the wafer from support surface 231. As shown in FIGS. 4 and 5 , support surface 231 includes a plurality of openings 237 and gas channels 238 . Openings 237 and/or gas channel 238 may be in fluid communication with one or more of a vacuum source or a gas source (eg, purge gas). In these types of embodiments, a hollow tube may be included to allow fluid communication of the openings 237 and/or the gas channel 238 with the gas source.

In some embodiments, heater 230 and/or support surface 231 are configured as an electrostatic chuck. In these types of embodiments, electrodes 251a, 251b (see Figure 7) may include control lines for the electrostatic chuck.

Some embodiments of support assembly 200 include sealing platform 240 . The sealing platform has a top surface 241, a bottom surface, and a thickness. Sealing platform 240 may be positioned around heaters 230 to help provide a seal or barrier to minimize gas flow into the area beneath support assembly 200.

In some embodiments, as shown in FIG. 4 , sealing platforms 240 are ring-shaped and positioned around each heater 230 . In the illustrated embodiment, the sealing platforms 240 are positioned below the heater 230 such that the top surface 241 of the sealing platform 240 is below the support surface 231 of the heater.

Sealing platforms 240 may have multiple purposes. For example, sealing platforms 240 can be used to increase the temperature uniformity of heater 230 by increasing thermal mass. In some embodiments, sealing platforms 240 may be formed integrally with heater 230 (see, eg, Figure 6). In some embodiments, sealing platforms 240 are separate from heater 230 . For example, the embodiment illustrated in FIG. 8 has sealing platform 240 as a separate component connected to heater standoffs 234 such that top surface 241 of sealing platform 240 is connected to heater 230. is below the level of the support surface 231.

In some embodiments, sealing platforms 240 act as a holder for support plate 245 . In some embodiments, as shown in Figure 5, the support plate 245 is configured to accommodate the heaters 230 with a plurality of openings 242 to allow access to the support surface 231 of the heaters 230. (230) It is a single component that surrounds the whole. Openings 242 may allow heaters 230 to pass through support plate 245 . In some embodiments, support plate 245 is fixed such that support plate 245 rotates with heaters 230 and moves vertically.

In one or more embodiments, support assembly 200 is a drum-shaped component, such as a cylindrical body with a top surface 246 configured to support a plurality of wafers, as shown in FIG. 20. The top surface 246 of the support assembly 200 has a plurality of depressions (pockets 257) sized to support one or more wafers during processing. In some embodiments, the pockets 257 have a depth approximately equal to the thickness of the wafers to be processed, such that the top surface of the wafers is substantially flush with the top surface 246 of the cylindrical body. An example of such a support assembly 200 can be envisioned as a modification of FIG. 5 without support arms 220 . Figure 20 illustrates a cross-sectional view of an embodiment of a support assembly 200 using a cylindrical body. Support assembly 200 includes a plurality of pockets 257 sized to support the wafer for processing. In the illustrated embodiment, the lowermost portion of pockets 257 is the support surface 231 of heater 230. Power connections for heaters 230 may be routed through support pillar 227 and support plate 245. Heaters 230 may be independently powered to control the temperature of individual pockets 257 and wafers.

9 , in some embodiments, the support plate 245 defines a major plane 248 that is substantially parallel to the major plane 247 defined by the support surface 231 of the heater 230. It has a top surface 246 that is. In some embodiments, the support plate 245 has a top surface 246 that defines a major plane 248 at a distance D above the major plane 247 of the support surface 231 . In some embodiments, the distance D is substantially equal to the thickness of the wafer 260 to be processed, such that the wafer 260 surface 261 is connected to the support plate 245, as shown in Figure 6. It is coplanar with the top surface 246 of . As used in this manner, the term “substantially coplanar” means that the major plane defined by the surface 261 of the wafer 260 is coplanar, ±1 mm, ±0.5 mm, ±0.4 mm, means within ±0.3 mm, ±0.2 mm, or ±0.1 mm.

9, some embodiments of the present disclosure have separate components that make up support surfaces for processing. Here, the sealing platform 240 is a separate component from the heater 230 and is positioned such that the top surface 241 of the sealing platform 240 is below the support surface 231 of the heater 230 . The distance between the top surface 241 of the sealing platform 240 and the support surface 231 of the heater 230 is sufficient to allow the support plate 245 to be positioned on the sealing platforms 240 . The thickness of the support plate 245 and/or the position of the sealing platform 240 is such that the top surface 261 of the wafer 260 (see FIG. 6) is substantially the same as the top surface 246 of the support plate 245. The distance D between the top surface 246 of the support plate 245 can be controlled to be sufficient to be in a plane.

In some embodiments, as shown in Figure 9, support plate 245 is supported by support pillars 227. Support pillars 227 may be useful in preventing sagging of the center of support plate 245 when a single component platform is used. In some embodiments, sealing platforms 240 are not present and support pillar 227 is the main support for support plate 245 .

Support plate 245 can have various configurations for interacting with various configurations of heaters 230 and sealing platforms 240 . FIG. 10A shows a top isometric view of support plate 245 according to one or more embodiments of the present disclosure. Figure 10B shows a cross-sectional view of the support plate 245 of Figure 10A taken along line 10B-10B'. In this embodiment, support plate 245 is a planar component, where top surface 246 and bottom surface 249 are substantially flat and/or substantially coplanar. The illustrated embodiment may be particularly useful when sealing platform 240 is used to support support plate 245, as shown in FIG. 9.

11A shows a bottom isometric view of another embodiment of a support plate 245 according to one or more embodiments of the present disclosure. FIG. 11B shows a cross-sectional view of the support plate 245 of FIG. 11A taken along line 11B-11B'. In this embodiment, each of the openings 242 has a protruding ring 270 around the outer perimeter of the opening 242, on the bottom surface 249 of the support plate 245.

12A shows a bottom isometric view of another embodiment of a support plate 245 according to one or more embodiments of the present disclosure. Figure 12B shows a cross-sectional view of the support plate 245 of Figure 12A taken along line 12B-12B'. In this embodiment, each of the openings 242 has a recessed ring 272 in the lowermost surface 249 of the support plate 245, around the outer perimeter of the opening 242. The depressed ring 272 creates a depressed bottom surface 273. This kind of embodiment may be useful when sealing platforms 240 are not present or are coplanar with the support surface 231 of heaters 230 . The recessed lowermost surface 273 is positioned on the support surface 231 of the heater 230 such that the lowermost portion of the support plate 245 extends below the support surface 231 of the heater 230 around the sides of the heater 230. ) can be located on.

Some embodiments of the present disclosure relate to top plates 300 for multi-station processing chambers. 1 and 13, top plate 300 has a top surface 301 and a bottom surface 302 that define the thickness of the cover, and one or more edges 303. Top plate 300 includes at least one opening 310 extending through its thickness. The openings 310 are sized to allow the addition of a gas injector 112 that can form a process station 110 .

Figure 14 illustrates an exploded view of processing station 110 according to one or more embodiments of the present disclosure. The illustrated processing station 110 includes three main components: top plate 300 (also referred to as a shroud), pump/purge insert 330, and gas injector 112. The gas injector 112 shown in FIG. 14 is a showerhead type gas injector. In some embodiments, the insert is connected to or in fluid communication with a vacuum (vent). In some embodiments, the insert is connected to or in fluid communication with a purge gas source.

The openings 310 of the top plate 300 may be uniformly sized or may have different sizes. Different size/shape gas injectors 112 may be used with a suitably shaped pump/purge insert 330 to transition from the opening 310 to the gas injector 112 . For example, as illustrated, pump/purge insert 330 includes a top 331 and a bottom 333 along with side walls 335. When inserted within the opening 310 of the top plate 300, the ledge 334 adjacent the bottom 333 may be positioned on the shelf 315 formed in the opening 310. In some embodiments, there is no shelf 315 in the opening, and the flange portion 337 of the pump/purge insert 330 rests on top of the top plate 300. In the illustrated embodiment, ledge 334 rests on shelf 315 with o-ring 314 positioned therebetween to help form an airtight seal.

In some embodiments, there are one or more purge rings 309 (see FIG. 13) on top plate 300. The purge rings 309 may be in fluid communication with a purge gas plenum (not shown) or a purge gas source (not shown) to provide positive purge gas flow to prevent leakage of process gases from the processing chamber. .

The pump/purge insert 330 of some embodiments includes a gas plenum 336 having at least one opening 338 at the lowermost portion 333 of the pump/purge insert 330. The gas plenum 336 typically has an inlet (not shown) near the top 331 or side wall 335 of the pump/purge insert 330.

In some embodiments, plenum 336 may be filled with a purge or inert gas that may pass through an opening 338 in the lowermost portion 333 of pump/purge insert 330. Gas flow through opening 338 can help create a gas curtain type barrier to prevent leakage of process gases from the interior of the processing chamber.

In some embodiments, plenum 336 is connected to or in fluid communication with a vacuum source. In such an embodiment, gases flow into the plenum 336 through an opening 338 in the lowermost portion 333 of the pump/purge insert 330. Gases can be evacuated from the plenum to the exhaust. Such an arrangement may be used to evacuate gases from the process station 110 during use.

The pump/purge insert 330 includes an opening 339 through which the gas injector 112 can be inserted. The illustrated gas injector 112 has a flange 342 that can contact a ledge 332 adjacent the top 331 of the pump/purge insert 330. The diameter or width of the gas injector 112 may be of any suitable size that can fit within the opening 339 of the pump/purge insert 330. This allows various types of gas injectors 112 to be used within the same opening 310 of top plate 300.

2 and 15 , some embodiments of top plate 300 include a bar 360 passing over a central portion of top plate 300. Bar 360 may be connected to top plate 300 near the center using connector 367. Connector 367 is perpendicular to the top 331 or bottom 333 of top plate 300 to compensate for deflection of top plate 300 as a result of pressure differences or due to the weight of top plate 300. It can be used to apply force. In some embodiments, bar 360 and connector 367 have a deflection of at most about 1.5 mm or equal at the center of the top plate having a width of about 1.5 m and a thickness of up to about 100 mm or equal. Compensation is possible. In some embodiments, a motor 365 or actuator may be connected to connector 367 and cause a change in the directional force applied to top plate 300. Motor 365 or actuator may be supported on bar 360. The illustrated bar 360 contacts the edges of the top plate 300 in two locations. However, a person skilled in the art will recognize that there may be one connection position or more than two connection positions.

In some embodiments, as illustrated in FIG. 2 , support assembly 200 includes at least one motor 250 . At least one motor 250 is connected to the central base 210 and is configured to rotate the support assembly 200 about the rotation axis 211 . In some embodiments, the at least one motor is configured to move central base 210 in a direction along rotation axis 211 . For example, in Figure 2, motor 255 is connected to motor 250 and can move support assembly 200 along rotation axis 211. Stated differently, the illustrated motor 255 may move the support assembly 200 along the z-axis, vertically, or orthogonal to the movement caused by the motor 250. In some embodiments, a first motor 250 to rotate support assembly 200 about rotation axis 211, and along rotation axis 211 (i.e., along the z-axis), as illustrated. There is a second motor 255 for moving the support assembly 200 (or vertically).

2 and 16, one or more vacuum streams and/or purge gas streams may be used to help isolate one or more process stations 110a from adjacent process stations 110b. A purge gas plenum 370 may be in fluid communication with a purge gas port 371 at the outer boundary of process station 110 . In the embodiment illustrated in FIG. 16 , purge gas plenum 370 and purge gas port 371 are located in top plate 300 . Plenum 336, shown as part of pump/purge insert 330, is in fluid communication with opening 338, which acts as a pump/purge gas port. Purge gas port 371 and purge gas plenum 370 as shown in FIG. 13 and vacuum port (opening 338) may extend around the perimeter of process station 110 to form a gas curtain. . The gas curtain can help minimize or eliminate leakage of process gases into the interior volume 109 of the processing chamber.

In the embodiment illustrated in Figure 16, differential pumping may be used to help isolate process stations 110. Pump/purge insert 330 is shown in contact with heater 230 and support plate 245 with o-rings 329. O-rings 329 are located on both sides of opening 338 in fluid communication with plenum 336. One o-ring 329 is located within the perimeter of the opening 338 and the other o-ring 329 is located outside the perimeter of the opening 338. The combination of o-rings 329 and pump/purge plenum 336 with opening 338 maintains an airtight seal of process station 110 from the interior volume 109 of process chamber 100. It can provide sufficient pressure difference for In some embodiments, there is one o-ring 329 located inside or outside the perimeter of opening 338. In some embodiments, there are two o-rings 329, one internal and one external, located around the purge gas port 371 in fluid communication with the plenum 370. . In some embodiments, there is one o-ring 329 located inside or outside the perimeter of purge gas port 371 in fluid communication with plenum 370.

The boundary of the process station 110 can be considered an area where the process gas is isolated by the pump/purge insert 330. In some embodiments, the outer boundary of the process station 110 has an opening 338 in fluid communication with the plenum 336 of the pump/purge insert 330, as shown in FIGS. 14 and 16. This is the outermost edge (381).

The number of process stations 110 may vary depending on the number of heaters 230 and support arms 220 . In some embodiments, there are equal numbers of heaters 230, support arms 220, and process stations 110. In some embodiments, the heaters 230 , support arms 220 , and process stations 110 are configured such that each of the support surfaces 231 of the heaters 230 is simultaneously connected to a different process station 110 . It is configured to be positioned adjacent to the front surfaces 214. Stated another way, each of the heaters is simultaneously positioned in the process station.

The spacing of processing stations 110 around processing chamber 100 may vary. In some embodiments, the processing stations 110 are sufficiently close together to minimize space between the stations, such that the substrate is processed while consuming a minimum amount of time and transport distance outside of one of the stations. Can be moved quickly between stations 110. In some embodiments, the process stations 110 are positioned close enough so that a wafer carried on the support surface 231 of the heater 230 is always within one of the process stations 110 .

17 illustrates a processing platform 400 according to one or more embodiments of the present disclosure. The embodiment shown in Figure 17 represents only one possible configuration and should not be considered limiting the scope of the present disclosure. For example, in some embodiments, processing platform 400 may include one or more of a different number of processing chambers 100, buffer stations 420, and/or robot 430 configurations than the illustrated embodiment. have

The exemplary processing platform 400 includes a central transfer station 410 having a plurality of sides 411 , 412 , 413 , 414 . The illustrated transfer station 410 has a first side 411 , a second side 412 , a third side 413 , and a fourth side 414 . Although four sides are shown, those skilled in the art will understand that there may be any suitable number of sides to the transfer station 410, for example, depending on the overall configuration of the processing platform 400. In some embodiments, transfer station 410 has 3 sides, 4 sides, 5 sides, 6 sides, 7 sides, or 8 sides.

The transfer station 410 has a robot 430 located therein. Robot 430 may be any suitable robot capable of moving a wafer during processing. In some embodiments, robot 430 has a first arm 431 and a second arm 432. The first arm 431 and the second arm 432 can be moved independently of the other arms. First arm 431 and second arm 432 may move in the x-y plane and/or along the z-axis. In some embodiments, robot 430 includes a third arm (not shown) or a fourth arm (not shown). Each of the arms can move independently of the other arms.

The illustrated embodiment includes six processing chambers 100, two connected to each of the second side 412, third side 413, and fourth side 414 of the central transfer station 410. Each of the processing chambers 100 may be configured to perform different processes.

Processing platform 400 may also include one or more buffer stations 420 connected to the first side 411 of central transfer station 410. Buffer stations 420 may perform the same or different functions. For example, the buffer stations may hold a cassette of wafers that are processed and returned to their original cassette, or one of the buffer stations may hold unprocessed wafers that are moved to another buffer station after processing. In some embodiments, one or more of the buffer stations are configured to preprocess, preheat, or clean wafers before and/or after processing.

Processing platform 400 may also include one or more slit valves 418 between central transfer station 410 and any of the processing chambers 100 . Slit valves 418 can be opened and closed to isolate the internal volume within processing chamber 100 from the environment within central transfer station 410. For example, if the processing chamber will generate plasma during processing, it may be helpful to close the slit valve for that processing chamber to prevent stray plasma from damaging the robots at the transfer station.

Processing platform 400 may be connected to factory interface 450 to allow wafers or cassettes of wafers to be loaded into processing platform 400 . Robot 455 within factory interface 450 may be used to move wafers or cassettes in and out of buffer stations. Wafers or cassettes may be moved within the processing platform 400 by a robot 430 at a central transfer station 410 . In some embodiments, factory interface 450 is a transfer station for another cluster tool (i.e., another multi-chamber processing platform).

A controller 495 may be provided for and coupled to the various components of processing platform 400 to control their operation. Controller 495 may be a single controller controlling the entire processing platform 400, or multiple controllers controlling individual portions of the processing platform 400. For example, processing platform 400 may include separate controllers for each of the individual processing chambers 100, central transfer station 410, factory interface 450, and robot 430.

In some embodiments, controller 495 includes a central processing unit (CPU) 496, memory 497, and support circuits 498. Controller 495 may control processing platform 400 directly or through computers (or controllers) associated with a particular process chamber and/or support system components.

Controller 495 may be any type of general purpose computer processor that may be used in an industrial setting to control various chambers and sub-processors. Memory 497 or computer-readable media of controller 495 may include random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, optical storage media (e.g., compact disk or digital video disk), flash. It may be one or more of readily available memory, such as a drive, or any other form of digital storage, local or remote. Memory 497 may hold a set of instructions operable by a processor (CPU 496) to control parameters and components of processing platform 400.

Support circuits 498 are coupled to CPU 496 to support the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuits and subsystems, etc. One or more processes may be stored in memory 498 as software routines that, when executed or invoked by a processor, cause the processor to control the operation of processing platform 400 or individual processing chambers in the manner described herein. Software routines may also be stored and/or executed by a second CPU (not shown) located remotely from the hardware controlled by CPU 496.

Some or all of the processes and methods of this disclosure can also be performed in hardware. Therefore, a process may be implemented in software, executed in hardware using a computer system, such as an application-specific integrated circuit or other type of hardware implementation, or as a combination of software and hardware. Software routines, when executed by a processor, transform a general-purpose computer into a special-purpose computer (controller) that controls chamber operation such that processes are performed.

In some embodiments, controller 495 has one or more configurations for executing individual processes or sub-processes to perform a method. Controller 495 may be configured to couple to intermediate components and operate them to perform the functions of the methods. For example, controller 495 may be configured to connect to and control one or more of gas valves, actuators, motors, slit valves, vacuum controls or other components.

18A-18I illustrate various configurations of processing chambers 100 with different process stations 110 . Lettered circles represent different process stations 110 and process conditions. For example, in Figure 18A, there are four process stations 110, each with a different letter. This represents four process stations 110 where each station has different conditions than the other stations. As indicated by the arrows, the process can occur by moving the heaters with the wafers to stations A through D. After exposure to D, the cycle may continue or be reversed.

In Figure 18B, two or four wafers can be processed simultaneously, with the wafers moved back and forth between positions A and B on the heaters. Two wafers can start at position A and two wafers can start at position B. The independent process stations 110 allow two of the stations to be turned off during the first cycle so that each wafer starts with an A exposure. The heaters and wafers can be rotated continuously clockwise or counterclockwise. In some embodiments, the heaters and wafers are rotated 90° in a first direction (eg, from A to B) and then rotated 90° in a second direction (eg, from B back to A). This repeated rotation results in four wafers/heaters being processed without rotating the support assembly beyond about 90°.

The embodiment illustrated in FIG. 18B may also be useful for processing two wafers in four process stations 110. This can be particularly useful if one of the processes is at a very different pressure or the A and B process times are very different.

In Figure 18C, three wafers can be processed in an ABC process in a single processing chamber 100. One station may be turned off or perform a different function (eg, preheating).

In Figure 18D, two wafers can be processed in the AB-processing process. For example, wafers may be placed only on B heaters. A quarter turn clockwise will place one wafer in the A station and the second wafer in the T station. Reversing this will move both wafers to the B stations, and another quarter turn counterclockwise will place the second wafer in A station and the first wafer in B station.

In Figure 18E, up to four wafers can be processed simultaneously. For example, if station A is configured to perform a CVD or ALD process, four wafers can be processed simultaneously.

18F-18I show similar types of configurations for processing chamber 100 with three process stations 110. Briefly, in Figure 18F, a single wafer (or more than one wafer) may undergo an ABC process. In Figure 18G, two wafers may undergo the AB process by placing one in the A location and the other in one of the B locations. The wafers can then be moved back and forth again, such that the wafer starting at position B moves to position A on the first move and then moves back to the same B position. 18H, the wafer may undergo an AB-processing process. In Figure 18I, three wafers can be processed simultaneously.

19A and 19B illustrate another embodiment of the present disclosure. FIG. 19A shows a partial view of the heater 230 and support plate 245 rotated to a position below the process station 110 so that the wafer 101 is adjacent the gas injector 112 . O-ring 329 on support plate 245 or on the outer portion of heater 230 is in a relaxed state.

19B shows a support plate ( 245) and heater 230 are shown. In this position, O-ring 329 is compressed to form a seal around the outer edge of support plate 245 or the outer portion of heater 230. This minimizes the volume of reaction zone 219 by allowing wafer 101 to be moved as close to gas injector 112 as possible, so that reaction zone 219 can be purged quickly.

Gases that can flow out of reaction zone 219 are evacuated through openings 338 into plenum 336 and to an exhaust or foreline (not shown). A purge gas curtain outside the opening 338 may be created by the purge gas plenum 370 and the purge gas port 371. Additionally, the gap 137 between the heater 230 and the support plate 245 further curtain-likely isolates the reaction zone 219 and allows reactive gases into the interior volume 109 of the processing chamber 100. It can help prevent them from flowing.

Referring again to FIG. 17 , the controller 495 in some embodiments may be configured to move a substrate on a robot between a plurality of processing chambers; Configurations for loading and/or unloading substrates in the system; Configuration for opening/closing slit valves; Configuration for providing power to one or more of the heaters; Configuration for measuring the temperature of heaters; Arrangement for measuring the temperature of wafers on heaters; Arrangements for loading or unloading wafers in heaters; Configuration to provide feedback between temperature measurement and heater power control; Configuration for rotating the support assembly about the axis of rotation; Configuration for moving the support assembly along an axis of rotation (i.e., along the z-axis); Configuration for setting or changing the rotational speed of the support assembly; Configuration for providing a flow of gas to the gas injector; Configuration for providing power to one or more electrodes to generate a plasma in a gas injector; Configuration for controlling the power supply to the plasma source; Configuration for controlling the frequency and/or power of the plasma source power supply; and/or a configuration for providing control over a thermal annealing process station.

One or more embodiments relate to a method of operating the processing chamber 100. In one or more embodiments, the method includes providing a processing chamber (100) comprising x spatially separated and isolated processing stations (110). In one or more embodiments, x is an integer ranging from 2 to 10. In one or more embodiments, x refers to the number of substrate support surfaces. In other embodiments, x refers to one or more of the number of substrate surfaces or the number of processing stations. In some embodiments, the number of substrate support surfaces and the number of processing stations are equal and equal to x. In one or more embodiments, x is an integer ranging from 2 to 6. In one or more embodiments, x is selected from 2, 3, 4, 5, 6, 7, 8, 9, or 10. In other embodiments, x is selected from 2, 3, 4, 5, or 6. In one or more embodiments, x is 4.

In some embodiments, x' refers to the number of different spatially separated isolated processing stations. Different spatially separated isolated processing stations refer to different process conditions at the processing stations. For example, in a system where there are four processing stations containing two different process conditions, x' is equal to 2. Embodiments of this kind have the same number of stations with each type of process condition. In one or more embodiments, the processing chamber is configured such that first processing stations have a first process condition, second processing stations have a second process condition, and a wafer rotated around all of the processing stations has two processing conditions at each process condition. It includes four processing stations, separated into alternating first processing stations and second processing stations, so that the processing stations will be exposed multiple times. For example, Figure 7 illustrates an embodiment where there are two different types of process conditions (A and B) at four process stations. In this example, x = 4 and x' = 2.

In one or more embodiments, processing chamber 100 has a processing chamber temperature and each processing station 110 independently has a processing station temperature, with the processing chamber temperatures being different from the processing station temperatures. In one or more embodiments, a substrate support assembly (200) having a plurality of substrate support surfaces (231) aligned with x spatially separated isolated processing stations (110), each substrate support surface (231) It is rotated (rx-1) times to rotate (360/x) degrees in the first direction with respect to the adjacent substrate support surface 231. As used herein, the term “(rx-1)” refers to the number (i.e., number of rotations) of the substrate support assembly. In one or more embodiments, r represents the number of processing cycles (i.e., ALD cycles) and is an integer greater than or equal to 1. In some embodiments, r is greater than 10, greater than 50, or greater than 100. In one or more embodiments, r ranges from 1 to 10, or ranges from 1 to 8, or ranges from 1 to 6, or ranges from 1 to 4, or is selected from 1, 2, 3, or 4. In other embodiments, r is 1. In still further embodiments, r is 2, 3, or 4.

In one or more embodiments, the substrate support assembly 200 then rotates (rx-1) such that each substrate support surface 231 rotates (360/x) degrees in the second direction relative to the adjacent substrate support surface 231. It rotates several times.

In one or more embodiments, the first direction and the second direction are opposite each other. In one or more embodiments, the first direction is selected from counterclockwise or clockwise. In one or more embodiments, the second direction is one of counterclockwise or clockwise.

In one or more embodiments, the plurality of substrate support surfaces 231 are substantially coplanar. As used in this way, “substantially coplanar” means that the planes formed by individual support surfaces 231 are ±5°, ±4° relative to the planes formed by other support surfaces 231. , means within ±3°, ±2°, or ±1°. In some embodiments, the term “substantially coplanar” refers to the planes formed by the individual support surfaces being within ±50 μm, ±40 μm, ±30 μm, ±20 μm, or ±10 μm. it means.

In one or more embodiments, the substrate support surfaces include heaters 230 that can support a wafer. In some embodiments, the substrate support surfaces or heaters 230 include electrostatic chucks.

In one or more embodiments, the method further includes controlling one or more of a processing chamber temperature or a processing station temperature.

In one or more embodiments, the method further includes controlling the rate of rotation (rx-1) of the plurality of substrate support assemblies 200.

One or more embodiments of the present disclosure relate to a method of operating processing chamber 100. In one or more embodiments, the method includes at least two different processing stations 110 and a first substrate support surface 231, a second substrate support surface 231, a third substrate support surface 231, and a fourth substrate. and providing a processing chamber (100) having a substrate support assembly (200) including support surfaces (231), each substrate support surface (231) aligned with a processing station (110) in an initial position. A first wafer on first substrate support surface 231 is exposed to first process conditions. The substrate support assembly 200 is rotated in a first direction to move the first wafer to an initial position on the second substrate support surface 231 . The first wafer is exposed to second process conditions. The substrate support assembly 200 is rotated in a first direction to move the first wafer to an initial position on the third substrate support surface 231 . The first wafer is exposed to third process conditions. The substrate support assembly 200 is rotated in a first direction to move the first wafer to an initial position on the fourth substrate support surface 231 . The first wafer is exposed to fourth process conditions. The substrate support assembly 200 is rotated in the second direction to move the first wafer to an initial position on the third substrate support surface 231 . The first wafer is exposed to third process conditions. The substrate support assembly 200 is rotated in a second direction to move the first wafer to an initial position on the second substrate support surface 231 . The first wafer is exposed to second process conditions. The substrate support assembly 200 is rotated in a second direction to move the first wafer to an initial position on the first substrate support surface 231 and the first wafer is exposed to first process conditions. In one or more embodiments, process conditions include one or more of temperature, pressure, reactive gases, etc.

In one or more embodiments, the method includes exposing a second wafer on a second substrate support surface 231 to a second process condition; rotating the substrate support assembly (200) in a first direction to move the second wafer to an initial position on the third substrate support surface (231); exposing the second wafer to third process conditions; rotating the substrate support assembly (200) in a first direction to move the second wafer to an initial position on the fourth substrate support surface (231); exposing the second wafer to fourth process conditions; rotating the substrate support assembly (200) in a first direction to move the second wafer to an initial position on the first substrate support surface (231); exposing the second wafer to first process conditions; rotating the substrate support assembly (200) in a second direction to move the second wafer to an initial position on the fourth substrate support surface (231); exposing the second wafer to fourth process conditions; rotating the substrate support assembly (200) in a second direction to move the second wafer to an initial position on the third substrate support surface (231); exposing the second wafer to third process conditions; rotating the substrate support assembly (200) in a second direction to move the second wafer to an initial position on the second substrate support surface (231); and exposing the second wafer to second process conditions.

In one or more embodiments, the method includes exposing a third wafer on a third substrate support surface 231 to third process conditions; rotating the substrate support assembly (200) in a first direction to move the third wafer to an initial position on the fourth substrate support surface (231); exposing the third wafer to fourth process conditions; rotating the substrate support assembly (200) in a first direction to move the third wafer to an initial position on the first substrate support surface (231); exposing a third wafer to first process conditions; rotating the substrate support assembly (200) in a first direction to move the third wafer to an initial position on the second substrate support surface (231); exposing the third wafer to second process conditions; rotating the substrate support assembly (200) in a second direction to move the third wafer to an initial position on the first substrate support surface (231); exposing a third wafer to first process conditions; rotating the substrate support assembly (200) in a second direction to move the third wafer to an initial position on the fourth substrate support surface (231); exposing the third wafer to fourth process conditions; rotating the substrate support assembly (200) in a second direction to move the third wafer to an initial position on the third substrate support surface (231); and exposing the third wafer to third process conditions.

In other embodiments, the method includes exposing a fourth wafer on a fourth substrate support surface 231 to fourth process conditions; rotating the substrate support assembly (200) in a first direction to move the fourth wafer to an initial position on the first substrate support surface (231); exposing a fourth wafer to first process conditions; rotating the substrate support assembly (200) in a first direction to move the fourth wafer to an initial position on the second substrate support surface (231); exposing the fourth wafer to second process conditions; rotating the substrate support assembly (200) in a first direction to move the fourth wafer to an initial position on the third substrate support surface (231); exposing the fourth wafer to third process conditions; rotating the substrate support assembly (200) in a second direction to move the fourth wafer to an initial position on the second substrate support surface (231); exposing the fourth wafer to second process conditions; rotating the substrate support assembly (200) in a second direction to move the fourth wafer to an initial position on the first substrate support surface (231); exposing a fourth wafer to first process conditions; rotating the substrate support assembly (200) in a second direction to move the fourth wafer to an initial position on the fourth substrate support surface (231); and exposing the fourth wafer to fourth process conditions.

FIG. 21 shows a flow diagram of a method 600 of depositing a film, according to one or more embodiments of the present disclosure. Figure 22 illustrates a processing chamber configuration according to one or more embodiments of the present disclosure. 21 and 22, method 600 begins at operation 620, where at least one wafer is loaded onto x substrate support surfaces. In one or more embodiments, x is an integer ranging from 2 to 10. In one or more embodiments, x refers to the number of substrate support surfaces. In other embodiments, x refers to one or more of the number of substrate surfaces or the number of processing stations 110. In some embodiments, the number of substrate support surfaces, and the number of wafers and/or processing stations are equal and equal to x. In one or more embodiments, x is an integer ranging from 2 to 6. In one or more embodiments, x is selected from 2, 3, 4, 5, 6, 7, 8, 9, or 10. In other embodiments, x is selected from 2, 3, 4, 5, or 6. In one or more embodiments, x is 4.

At operation 630, the substrate support assembly is rotated (rx-1) times in the first direction such that each substrate support surface rotates (360/x) degrees relative to the adjacent processing station 110, where r is one or more It is an integer. The number r represents the number of process cycles (i.e. ALD cycles). As used herein, the term "(rx-1)" or "(rx'-1)" refers to the number (i.e., number of rotations) of the substrate support assembly.

In some embodiments, there is more than one process cycle (r) during a complete rotation around the process chamber. For example, Figure 22 illustrates a process according to method 600, wherein four (x = 4) process stations with two (x' = 2) different types of process conditions (A and B) (110) exists. In this embodiment, the substrate support assembly can be rotated an odd number of times in each direction to provide alternating exposures to both process conditions. In some embodiments, the number of rotations in each direction is equal to (rx'-1) times. In the embodiment illustrated in Figure 7, r = 2 and x' = 2, so there are three rotations 117a, 117b, 117c in the first direction.

In operation 640, at each processing station, the top surface of at least one wafer is exposed to process conditions to form a film. In one or more embodiments, process conditions include one or more of temperature, pressure, reactive gases, etc. In one or more embodiments, the formed film has a substantially uniform thickness. As used herein, the term “substantially uniform” refers to film thicknesses that are within ±5 nm, ±4 nm, ±3 nm, ±2 nm, or ±1 nm of the formed films.

At operation 650, the substrate support assembly rotates (rx-1) times or (rx'-1) times in the second direction such that each substrate support surface rotates (360/x) degrees relative to the adjacent processing station 110. It rotates several times. As shown in FIG. 22, there are three rotations 118a, 118b, and 118c in the second direction.

At decision point 660, when a predetermined thickness of film has been formed on the substrate, the method is stopped. If at decision point 660 the predetermined thickness of the film has not been obtained on the substrate, the process cycle 625 is repeated until the predetermined thickness is obtained.

FIG. 23 shows a flow diagram of a method 700 of depositing a film, according to one or more embodiments of the present disclosure. Figure 24 illustrates a processing chamber configuration according to one or more embodiments of the present disclosure. 23 and 24, method 700 begins at operation 720, where at least one wafer is loaded onto x substrate support surfaces. In one or more embodiments, x is an integer ranging from 2 to 10. In one or more embodiments, x refers to the number of substrate support surfaces. In other embodiments, x refers to one or more of the number of substrate support surfaces or the number of processing stations 110. In some embodiments, the number of substrate support surfaces, and the number of wafers and/or processing stations 110 are equal and equal to x. In one or more embodiments, x is an integer ranging from 2 to 6. In one or more embodiments, x is selected from 2, 3, 4, 5, 6, 7, 8, 9, or 10. In other embodiments, x is selected from 2, 3, 4, 5, or 6. In one or more embodiments, x is 4.

At operation 730, the substrate support assembly is rotated rx times in the first direction such that each substrate support surface rotates relative to each adjacent processing station 110, where r is an integer greater than or equal to 1. As used herein, the term “(rx)” refers to the number (i.e., number of rotations) of the substrate support assembly. For example, in the embodiment illustrated in FIGS. 23 and 24 , when there are four processing stations (i.e., x = 4), the substrate support rotates at least four times in the first direction and at least four times in the second direction.

In some embodiments, there is more than one process cycle in a complete rotation around the process chamber. For example, Figure 24 illustrates a process according to method 700, wherein four (x = 4) process stations with two (x' = 2) different types of process conditions (A and B) (110) exists. In this embodiment, the substrate support assembly can be rotated in each direction to provide alternating exposures to both process conditions. In some embodiments, the number of rotations in each direction is equal to rx times. In the embodiment illustrated in FIG. 24 , four rotations 117a, 117b, 117c, 117d in the first direction result in two complete ALD cycles, and the substrates are returned to the initial processing station 110.

In operation 740, at each processing station, the top surface of at least one wafer is exposed to process conditions to form a film. In one or more embodiments, process conditions include one or more of temperature, pressure, reactive gases, etc. In one or more embodiments, the formed film has a substantially uniform thickness. As used herein, the term “substantially uniform” refers to film thicknesses that are within ±5 nm, ±4 nm, ±3 nm, ±2 nm, or ±1 nm of the formed films.

At operation 750, the substrate support assembly is rotated (rx) times in the second direction such that each substrate support surface rotates (360/x) degrees relative to the adjacent processing station 110. As shown in FIG. 24, there are four rotations 118a, 118b, 118c, and 118d in the second direction.

At decision point 760, when a predetermined thickness of film has been formed on the substrate, the method is stopped. If at decision point 760 the predetermined thickness of the film has not been obtained on the substrate, cycle 725 is repeated until the predetermined thickness is obtained.

Figure 25 shows a flow diagram of a method 800 of depositing a film, according to one or more embodiments of the present disclosure. Figure 26 illustrates a processing chamber configuration according to one or more embodiments of the present disclosure. 25 and 26, method 800 begins at operation 820, where at least one wafer is loaded onto x substrate support surfaces. In one or more embodiments, x is an integer ranging from 2 to 10. In one or more embodiments, x refers to the number of substrate support surfaces. In other embodiments, x refers to one or more of the number of substrate surfaces or the number of processing stations 110. In some embodiments, the number of substrate support surfaces, and the number of wafers and/or processing stations are equal and equal to x. In one or more embodiments, x is an integer ranging from 2 to 6. In one or more embodiments, x is selected from 2, 3, 4, 5, 6, 7, 8, 9, or 10. In other embodiments, x is selected from 2, 3, 4, 5, or 6. In one or more embodiments, x is 4.

At operation 830, the substrate support assembly is rotated (360/x) degrees in a first direction and subsequently in a second direction ( 360/x) is also rotated. Rotations in the first direction and the second direction may be repeated n times, where n is an integer of 1 or more. The number n represents the number of process cycles (i.e. ALD cycles). Stated differently, each process includes rotation in the first direction followed by processing and rotation in the second direction in one process cycle, whereby the substrate is subjected to the first reactive gas at the first and second stations. and a second reactive gas, respectively.

26 illustrates a process according to method 800, wherein four (x' = 4) different types of process conditions (A, B, C, and D) are used. There is a process station 120 of In this embodiment, the substrate support assembly 100 is rotated in a first direction 117 such that a substrate disposed on the process station 120a rotates 117a into the process station 120b, and then the substrate support assembly 100 100 is rotated in a second direction 118 such that the substrate (now positioned on process station 120b) rotates 118a back to process station 120a. This rotation can be repeated n times, where n is an integer greater than or equal to 1. The number n represents the number of process cycles (i.e. ALD cycles).

In operation 840, at each processing station, the top surface of at least one wafer is exposed to process conditions to form a film. In one or more embodiments, process conditions include one or more of temperature, pressure, reactive gases, etc. In one or more embodiments, the formed film has a substantially uniform thickness. As used herein, the term “substantially uniform” refers to film thicknesses that are within ±5 nm, ±4 nm, ±3 nm, ±2 nm, or ±1 nm of the formed films.

In operation 850, the substrate support assembly is then rotated (360/x) degrees in the first direction 117 followed by another rotation (360/x) degrees in the first direction 117. Referring to FIG. 26, the substrate on the process station 120a rotates 117a to the process station 120b and then rotates 117b to the process station 120c. In operation 850 of some embodiments, the substrate support is rotated a sufficient number of times to move the substrates to the second set of processing stations. For example, the substrate support is rotated twice to move the substrate initially at station A to station C.

In some embodiments (not illustrated), when the substrate support is rotated from station A to station B, the top surface of at least one wafer is exposed to process conditions for forming a film. In one or more embodiments, process conditions include one or more of temperature, pressure, reactive gases, etc. In one or more embodiments, the formed film has a substantially uniform thickness. As used herein, the term “substantially uniform” refers to film thicknesses that are within ±5 nm, ±4 nm, ±3 nm, ±2 nm, or ±1 nm of the formed films.

In some embodiments (not illustrated), when the substrate support is then rotated from station B to station C, the top surface of at least one wafer is exposed to process conditions for forming a film. In one or more embodiments, process conditions include one or more of temperature, pressure, reactive gases, etc. In one or more embodiments, the formed film has a substantially uniform thickness. As used herein, the term “substantially uniform” refers to film thicknesses that are within ±5 nm, ±4 nm, ±3 nm, ±2 nm, or ±1 nm of the formed films.

At operation 860, the substrate support assembly 100 is rotated (360/x) degrees in the first direction 117 such that each substrate support surface rotates with respect to each adjacent processing station 120 and then rotates the subsequent substrate support surfaces. Thus, (360/x) is rotated in the second direction 118. This rotation can be repeated m times, where m is an integer greater than or equal to 1. The number m represents the number of process cycles (i.e. ALD cycles).

26, the substrate support assembly 100 is rotated in a first direction 117 such that the substrate now disposed on process station 120c is rotated 117c to process station 120d, and then: The substrate support assembly 100 is rotated in the second direction 118 such that the substrate (now positioned on process station 120d) rotates 118b back to process station 120c. This rotation can be repeated m times, where m is an integer greater than or equal to 1. The number m represents the number of process cycles (i.e. ALD cycles).

In operation 870, at each processing station, the top surface of at least one wafer is exposed to process conditions to form a film. In one or more embodiments, process conditions include one or more of temperature, pressure, reactive gases, etc. In one or more embodiments, the formed film has a substantially uniform thickness. As used herein, the term “substantially uniform” refers to film thicknesses that are within ±5 nm, ±4 nm, ±3 nm, ±2 nm, or ±1 nm of the formed films.

In operation 880, the substrate support assembly is then rotated (360/x) degrees in the second direction 118. Referring to FIG. 26, the substrate on process station 120c rotates 118c to process station 120b.

At decision point 890, when a predetermined thickness of film has been formed on the substrate, the method is stopped. If at decision point 890 the predetermined thickness of the film has not been obtained on the substrate, cycle 825 is repeated until the predetermined thickness is obtained.

In one or more embodiments, at least one wafer is at rest when the film is formed.

In one or more embodiments of the method, the substrate support surface includes heaters. In one or more embodiments, the substrate support surfaces or heaters include electrostatic chucks.

Throughout this specification, reference to “one embodiment,” “specific embodiments,” “one or more embodiments,” or “an embodiment” refers to the specific feature, structure, material, or characteristic described in connection with the embodiment. This means that it is included in at least one embodiment of the present disclosure. Accordingly, the appearances of phrases such as “in one or more embodiments,” “in certain embodiments,” “in one embodiment,” or “in an embodiment” in various places throughout this specification necessarily refer to the present disclosure. It does not refer to the same embodiment. Additionally, specific features, structures, materials, or properties may be combined in any suitable way in one or more embodiments.

Although the disclosure herein has been described with reference to specific embodiments, it should be understood that such embodiments merely illustrate the principles and applications of the disclosure. It will be apparent to those skilled in the art that various modifications and variations may be made to the method and apparatus of the present disclosure without departing from the spirit and scope of the disclosure. Accordingly, this disclosure is intended to cover modifications and variations that come within the scope of the appended claims and their equivalents.

Claims (15)

As a method,
Providing a processing chamber comprising x spatially separated and isolated processing stations, wherein the processing chambers have a processing chamber temperature, each processing station independently having a processing station temperature, the processing chamber temperature being Different from temperatures -;
A substrate support assembly having a plurality of substrate support surfaces and a support plate aligned with the x spatially separated isolated processing stations, each substrate support surface being oriented in a first direction relative to an adjacent substrate support surface (360/x ) rotating rx times to rotate degrees, where r is an integer greater than or equal to 1, each of the plurality of substrate support surfaces includes a heater and a sealing platform connected to the heater in a downward position, and the uppermost surface of the sealing platform is Enclosing the heater so as to be below the top surface of the heater, the sealing platform is configured to provide a seal or barrier to minimize gas flow to the area beneath the substrate support assembly, the sealing platform being configured to cause the support plate to be connected to the heater. configured to operate as a holder for said support plate to rotate and move vertically together; and
and rotating the substrate support assembly rx times such that each substrate support surface rotates (360/x) degrees in a second direction relative to an adjacent substrate support surface. According to paragraph 1,
and x is an integer ranging from 2 to 10. According to paragraph 1,
r ranges from 1 to 10. According to paragraph 1,
The method of claim 1, wherein the plurality of substrate support surfaces are substantially coplanar. delete According to paragraph 1,
The method further comprising controlling one or more of the processing chamber temperature or the processing station temperatures. According to paragraph 1,
The method further comprising controlling the rotational speed of the plurality of substrate support assemblies. As a method,
Providing a processing chamber comprising x spatially separated and isolated processing stations, wherein the processing chambers have a processing chamber temperature, each processing station independently having a processing station temperature, the processing chamber temperature being Different from temperatures -;
rotating a substrate support assembly having a plurality of substrate support surfaces and a support plate aligned with the x spatially separated isolated processing stations in a first direction (360/x) relative to adjacent substrate support surfaces, Each of the plurality of substrate support surfaces includes a heater and a sealing platform connected at a downward position to the heater, surrounding the heater such that a top surface of the sealing platform is below a top surface of the heater, and the sealing platform is configured to support the substrate. configured to provide a seal or barrier to minimize gas flow into the area beneath the support assembly, wherein the sealing platform is configured to operate as a holder for the support plate such that the support plate rotates and moves vertically with the heater - ;
rotating the substrate support assembly (360/x) degrees in a second direction relative to an adjacent substrate support surface, wherein the rotations in the first direction and the rotations in the second direction are repeated n times, where n is 1. It is an integer greater than or equal to -;
rotating the substrate support assembly two times (360/x) degrees in the first direction;
rotating the substrate support assembly (360/x) degrees in the first direction and then rotating the substrate support assembly (360/x) degrees in the second direction, The rotations are repeated m times, where m is an integer greater than or equal to 1; and
and rotating the substrate support assembly through (360/x) degrees in the second direction. According to clause 8,
and x is an integer ranging from 2 to 10. According to clause 8,
The method of claim 1, wherein the plurality of substrate support surfaces are substantially coplanar. According to clause 8,
The method further comprising controlling one or more of the processing chamber temperature or the processing station temperatures. According to clause 8,
The method further comprising controlling the rotational speed of the plurality of substrate support assemblies. As a method of forming a membrane,
Loading at least one wafer on x substrate support surfaces of a substrate support assembly having a support plate, each of the substrate support surfaces being aligned with x spatially separated isolated processing stations, Each includes a heater and a sealing platform connected to the heater in a downward position, surrounding the heater such that a top surface of the seal platform is below a top surface of the heater, and the seal platform extends to an area below the substrate support assembly. configured to provide a seal or barrier to minimize gas flow, wherein the sealing platform is configured to operate as a holder for the support plate such that the support plate rotates and moves vertically with the heater;
rotating the substrate support assembly rx times such that each substrate support surface rotates (360/x) degrees in a first direction relative to the adjacent substrate support surface, where r is an integer greater than or equal to 1;
rotating the substrate support assembly rx times such that each substrate support surface rotates (360/x) degrees in a second direction with respect to the adjacent substrate support surface; and
At each processing station, exposing a top surface of the at least one wafer to process conditions to form a film having a substantially uniform thickness,
wherein all portions of the at least one wafer on the x substrate support surfaces are simultaneously aligned with the x spatially separated isolated processing stations. According to clause 13,
The method of claim 1, wherein the at least one wafer is stationary when the film is formed. According to clause 13,
x is an integer ranging from 2 to 10, and r is an integer ranging from 1 to 10.

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