KR20240121354A - Methods of operating a spatial deposition tool - Google Patents

Abstract

Apparatus and methods for processing one or more wafers are described. A spatial deposition tool includes a plurality of substrate support surfaces on a substrate support assembly, and a plurality of spatially separated and isolated processing stations. The spatially separated and isolated processing stations have independently controlled temperatures, processing gas types, and gas flows. In some embodiments, the processing gases for one or more processing stations are activated using plasma sources. Operation of the spatial tool includes rotating the substrate assembly in a first direction, rotating the substrate assembly in a second direction, and repeating the rotations in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s).

Description

METHODS OF OPERATING A SPATIAL DEPOSITION TOOL

The present disclosure generally relates to apparatus for depositing thin films and methods for processing wafers. In particular, the present disclosure relates to a processing chamber having a plurality of movable heated wafer supports and spatially separated processing stations, and spatially separated isolated processing stations.

There are a number of potential problems and difficulties with current atomic layer deposition (ALD) processes. Many ALD chemistries (e.g., precursors and reactants) are "incompatible," meaning that the chemistries cannot be mixed together. When incompatible chemistries are mixed, a chemical vapor deposition (CVD) process may occur instead of an ALD process. CVD processes generally have less thickness control than ALD processes and/or can result in the generation of gas phase particles that can cause defects in the resulting device. In a conventional time-domain ALD process where a single reactive gas is flowed into the process chamber at a time, long purge/pump exhaust times are required to prevent the chemistries from mixing in the gas phase. A spatial ALD chamber can move one or more wafer(s) from one environment to a second environment faster than a time-domain ALD chamber can pump/purge, resulting in higher throughput.

The semiconductor industry demands high quality films that can be deposited at lower temperatures (e.g., below 350°C). To deposit high quality films at temperatures below the temperatures at which the films would be deposited by thermal-only processes, alternative energy sources are needed. Plasma solutions can be used to provide additional energy to the ALD film in the form of ions and radicals. Obtaining sufficient energy on the vertical sidewall ALD film is a challenge. The ions are typically accelerated through a sheath above the wafer in a direction perpendicular to the wafer surface. Therefore, since the ions travel parallel to the vertical surfaces, they provide energy to the horizontal ALD film surfaces but insufficient energy to the vertical surfaces.

Some process chambers include a capacitively coupled plasma (CCP). The CCP is generated between the top electrode and the wafer and is commonly known as a CCP parallel plate plasma. A CCP parallel plate plasma generates very high ion energies across the two sheaths and therefore performs very poorly on vertical sidewall surfaces. Better vertical ALD film properties can be achieved by spatially moving the wafer to an environment optimized to generate high radical flux and lower energies of ions and a wider angular distribution across the wafer surface. Such plasma sources include microwave, inductively coupled plasma (ICP), or higher frequency CCP solutions with third electrodes (i.e., the plasma is generated between two electrodes above the wafer without using the wafer as the primary electrode).

Current spatial ALD processing chambers rotate multiple wafers at a constant speed on a heated circular platen that moves the wafers from one processing environment to an adjacent environment. The different processing environments create a separation of non-compatible gases. However, current spatial ALD processing chambers are unable to optimize the plasma environment for plasma exposure, resulting in non-uniformity, plasma damage, and/or processing flexibility issues.

For example, process gases flow across the wafer surface. Since the wafer rotates about the offset axis, the leading and trailing edges of the wafer have different flow streamlines. Additionally, there is also a flow difference between the inner and outer edges of the wafer, caused by faster velocities at the outer edge and slower velocities at the inner edge. These flow non-uniformities can be optimized, but not eliminated. Plasma damage can occur when exposing the wafer to non-uniform plasma. The constant rotation speed of these spatial processing chambers requires that the wafers move in and out of the plasma, so that some areas of the wafer are exposed to the plasma while other areas are outside the plasma. Additionally, the constant rotation speed can make it difficult to vary the exposure times in the spatial processing chamber. As an example, the process uses a 0.5 second exposure to gas A followed by a 1.5 second plasma treatment. Since the tool runs at a constant rotation speed, the only way to do this is to make the plasma environment three times larger than the gas A injection environment. If other processes with the same gas A and plasma times are to be performed, hardware changes will be required. Current spatial ALD chambers can only slow down or speed up the rotation speed and cannot adjust for time differences between steps without changing the chamber hardware to smaller or larger areas.

In current spatial ALD deposition tools (or other spatial processing chambers) where the main deposition steps occur while the wafer is stationary in a processing station simulating a single wafer chamber, the method of operation often involves moving the wafer to more than one of the same station types, which results in leading and trailing edge differences on the wafers due to different portions of the wafer being exposed to different environments. Accordingly, there is a need in the art for improved deposition apparatus and methods.

One or more embodiments of the present disclosure relate to a method of operating a processing chamber. In one or more embodiments, the method comprises: providing a processing chamber comprising x spatially separated isolated processing stations, wherein the processing chamber has a processing chamber temperature, each of the processing stations independently having a processing station temperature, the processing chamber temperature being different from the processing station temperatures; rotating a substrate support assembly having a plurality of substrate support surfaces aligned with the x spatially separated isolated processing stations, each of the substrate support surfaces rotating (rx-1) times in a first direction such that each of the substrate support surfaces rotates (360/x) degrees relative to an adjacent substrate support surface, wherein r is an integer greater than or equal to 1; and rotating the substrate support assembly (rx-1) times such that each of the substrate support surfaces rotates (360/x) degrees relative to the adjacent substrate support surface in a second direction.

In one or more embodiments, the method comprises: providing a processing chamber having a substrate support assembly including at least two different processing stations and a first substrate support surface, a second substrate support surface, a third substrate support surface, and a fourth substrate support surface, each of the substrate support surfaces being aligned with the processing stations in an initial position; exposing a first wafer on the first substrate support surface to a first process condition; rotating the substrate support assembly in a first direction to move the first wafer to an initial position on the second substrate support surface; exposing the first wafer to a second process condition; rotating the substrate support assembly in the first direction to move the first wafer to an initial position on the third substrate support surface; exposing the first wafer to the third process condition; rotating the substrate support assembly in the first direction to move the first wafer to an initial position on the fourth substrate support surface; exposing the first wafer to the fourth process condition; rotating the substrate support assembly in the second direction to move the first wafer to an initial position on the third substrate support surface; exposing the first wafer to the third process condition; The method comprises: rotating the substrate support assembly in a second direction to move the first wafer to an initial position on the second substrate support surface; exposing the first wafer to second process conditions; rotating the substrate support assembly in the second direction to move the first wafer to an initial position on the first substrate support surface; and exposing the first wafer to the first process conditions.

Additional embodiments of the present disclosure relate to methods of forming a film. In one or more embodiments, a method of forming a film comprises: loading at least one wafer on x substrate support surfaces of a substrate support assembly, each of the substrate support surfaces being aligned with x spatially separated isolated processing stations; rotating the substrate support assembly in a first direction (rx-1) times such that each substrate support surface rotates (360/x) degrees relative to an adjacent substrate support surface, wherein r is an integer greater than or equal to 1; rotating the substrate support assembly in a second direction (rx-1) times such that each substrate support surface rotates (360/x) degrees relative to the adjacent substrate support surface; and, at each processing station, exposing a top surface of the at least one wafer to process conditions such that a film having a substantially uniform thickness is formed.

One or more embodiments of the present disclosure relate to a method of operating a processing chamber. In one or more embodiments, the method comprises: providing a processing chamber comprising x spatially separated isolated processing stations, wherein the processing chamber has a processing chamber temperature, each of the processing stations independently having a processing station temperature, the processing chamber temperature being different from the processing station temperatures; rotating a substrate support assembly having a plurality of substrate support surfaces aligned with the x spatially separated isolated processing stations, each of the substrate support surfaces rotating rx times in a first direction such that each of the substrate support surfaces rotates (360/x) degrees relative to an adjacent substrate support surface, wherein r is an integer greater than or equal to 1; and rotating the substrate support assembly rx times such that each of the substrate support surfaces rotates (360/x) degrees relative to the adjacent substrate support surface in a second direction.

Additional embodiments of the present disclosure relate to methods of operating a processing chamber. In one or more embodiments, the method comprises: providing a processing chamber comprising x spatially separated isolated processing stations, wherein the processing chamber has a processing chamber temperature, each of the processing stations independently having a processing station temperature, the processing chamber temperatures being different from the processing station temperatures; rotating a substrate support assembly having a plurality of substrate support surfaces aligned with the x spatially separated isolated processing stations in a first direction (360/x) degrees relative to an adjacent substrate support surface; rotating the substrate support assembly in a second direction (360/x) degrees relative to the adjacent substrate surface, wherein the rotations in the first direction and the second direction are repeated n times, where n is an integer greater than or equal to 1; rotating the substrate support assembly twice (360/x) degrees in the first direction; A method comprising: rotating a substrate support assembly by (360/x) degrees in a first direction and then rotating the substrate support assembly by (360/x) degrees in a second direction, wherein the rotations in the first direction and the second direction are repeated m times, where m is an integer greater than or equal to 1; and rotating the substrate support assembly by (360/x) degrees in the second direction.

So that the above-mentioned features of the present disclosure may be understood in detail, a more particular description of the present disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of the present disclosure and are therefore not to be considered limiting the scope of the present disclosure, for the disclosure may admit to other equally effective embodiments.
FIG. 1 illustrates a cross-sectional isometric view of a processing chamber according to one or more embodiments of the present disclosure.
FIG. 2 illustrates a cross-sectional view of a processing chamber according to one or more embodiments of the present disclosure.
FIG. 3 illustrates a bottom parallel projection view of a support assembly according to one or more embodiments of the present disclosure.
FIG. 4 illustrates a top parallel projection view of a support assembly according to one or more embodiments of the present disclosure.
FIG. 5 illustrates a top parallel projection view of a support assembly according to one or more embodiments of the present disclosure.
FIG. 6 illustrates a cross-sectional side view of a support assembly according to one or more embodiments of the present disclosure.
FIG. 7 illustrates a partial cross-sectional side view of a support assembly according to one or more embodiments of the present disclosure.
FIG. 8 illustrates a partial cross-sectional side view of a support assembly according to one or more embodiments of the present disclosure.
FIG. 9 illustrates a partial cross-sectional side view of a support assembly according to one or more embodiments of the present disclosure.
FIG. 10A is a top isometric view of a support plate according to one or more embodiments of the present disclosure.
Figure 10b is a side cross-sectional view of the support plate of Figure 10a taken along line (10B-10B').
FIG. 11A is a bottom isometric view of a support plate according to one or more embodiments of the present disclosure.
Figure 11b is a side cross-sectional view of the support plate of Figure 11a taken along line (11B-11B').
FIG. 12A is a bottom isometric view of a support plate according to one or more embodiments of the present disclosure.
Figure 12b is a side cross-sectional view of the support plate of Figure 12a taken along line (12B-12B').
FIG. 13 is a cross-sectional isometric view of a top plate of a processing chamber according to one or more embodiments of the present disclosure.
FIG. 14 is an exploded cross-sectional view of a process station according to one or more embodiments of the present disclosure.
FIG. 15 is a schematic cross-sectional side view of a top plate for a processing chamber according to one or more embodiments of the present disclosure.
FIG. 16 is a partial cross-sectional side view of a process station of a processing chamber according to one or more embodiments of the present disclosure.
FIG. 17 is a schematic representation of a processing platform according to one or more embodiments of the present disclosure.
FIGS. 18A through 18I illustrate schematic diagrams of process station configurations of a processing chamber according to one or more embodiments of the present disclosure.
FIGS. 19A and 19B illustrate schematic representations of a process according to one or more embodiments of the present disclosure.
FIG. 20 illustrates a schematic representation of a cross-section of a support assembly according to one or more embodiments of the present disclosure.
FIG. 21 illustrates a process flow diagram of one embodiment of a method for forming a thin film according to embodiments described herein.
FIG. 22 illustrates a schematic representation of a process chamber and process flow according to one or more embodiments of the present disclosure.
FIG. 23 illustrates a process flow diagram of one embodiment of a method for forming a thin film according to embodiments described herein.
FIG. 24 illustrates a schematic representation of a process chamber and process flow according to one or more embodiments of the present disclosure.
FIG. 25 illustrates a process flow diagram of one embodiment of a method for forming a thin film according to embodiments described herein.
FIG. 26 illustrates a schematic representation of a process chamber and process flow according to one or more embodiments of the present disclosure.

Before describing some exemplary embodiments of the present disclosure, it is to be understood that the present disclosure is not limited to the details of the configurations or process steps set forth in the following description. The present disclosure is capable of other embodiments and of being practiced or carried out in various ways.

As used herein, "substrate" refers to any substrate or material surface formed on a substrate upon which a film treatment is performed during a manufacturing process. For example, substrate surfaces on which the treatment may be performed include, depending on the application, materials such as silicon, silicon oxide, strained silicon, silicon on insulator (SOI), carbon doped silicon oxides, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials, such as metals, metal nitrides, metal alloys, and other conductive materials. Substrates include, but are not limited to, semiconductor wafers. Substrates may be exposed to a pretreatment process to polish, etch, reduce, oxidize, hydroxylate, anneal, and/or bake the substrate surface. In the present disclosure, in addition to performing a film treatment directly on the surface of the substrate itself, any of the film treatment steps disclosed may also be performed on an underlying layer formed on the substrate, as described in more detail below, and the term "substrate surface" is intended to include such underlying layer, as the context indicates. Thus, for example, when a film/layer or partial film/layer is deposited on a substrate surface, the exposed surface of the newly deposited film/layer becomes the substrate surface.

As used in this specification and the appended claims, the terms “precursor,” “reactant,” “reactive gas,” and the like, are used interchangeably to refer to any gaseous species capable of reacting with a substrate surface or a film formed on a substrate surface.

One or more embodiments of the present disclosure utilize spatial separation between two or more processing environments. Some embodiments advantageously provide apparatus and methods for maintaining separation of non-compatible gases. Some embodiments advantageously provide apparatus and methods that include optimizable plasma processing. Some embodiments advantageously provide apparatus and methods that allow for differentiated heat input environments, differentiated plasma processing environments, and other environments.

One or more embodiments of the present disclosure relate to processing chambers having four spatially separated processing environments, also referred to as processing stations. Some embodiments have more than four, and some embodiments have less than four. The processing environments can be coplanar with respect to the wafer(s) moving in a horizontal plane. The process environments are arranged in a circular array. A rotatable structure having one to four (or more) individual wafer heaters mounted thereon moves the wafers in a circular path having a diameter similar to the process environments. Each heater can be temperature controlled and can have one or more concentric zones. For wafer loading, the rotatable structure can be lowered so that a vacuum robot can pick finished wafers and place unprocessed wafers on lift pins positioned above each wafer heater (at a lower Z position). In operation, each wafer can be in an independent environment until the process is complete, after which the rotatable structure can rotate (90° for four stations, 120° for three stations) to move the wafers on the heaters to the next environment for processing.

Some embodiments of the present disclosure advantageously provide spatial separation for ALD using non-compatible gases. Some embodiments allow for higher throughput and tool resource utilization than conventional time-domain or spatial process chambers. Each process environment can operate at different pressures. The heater rotation has a Z-direction motion such that each heater can be sealed to the chamber.

Some embodiments advantageously provide plasma environments that can include one or more of a microwave, an ICP, a parallel plate CCP, or a three-electrode CCP. The entire wafer can be immersed in the plasma, thereby eliminating plasma damage from non-uniform plasma across the wafer.

In some embodiments, a small gap between the showerhead and the wafer may be used to increase the input gas utilization and cycle time speed. Precise showerhead temperature control and high operating range (up to 230° C). Without being bound by theory, it is believed that the closer the showerhead temperature is to the wafer temperature, the better the wafer temperature uniformity.

The showerheads may include a cyclic feed gas distribution within the showerhead that uses small gas holes (<200 μm), a large number of gas holes (thousands to more than ten million), and a small distribution volume to increase velocity. The small size and large number of gas holes may be created by laser drilling or dry etching. When the wafer is close to the showerhead, there is turbulence experienced by the gas as it moves through the vertical holes toward the wafer. Some embodiments use a large number of holes that are closely spaced apart to allow a slower velocity gas through the showerhead to achieve a uniform distribution across the wafer surface.

Some embodiments relate to integrated processing platforms that utilize multiple spatially separated processing stations (chambers) on a single tool. The processing platform may have various chambers capable of performing different processes.

Some embodiments of the present disclosure relate to devices and methods for moving wafers attached to wafer heater(s) from one environment to another. Rapid movement can be achieved by electrostatically chucking (or clamping) the wafer(s) to the heater(s). The movement of the wafers can be linear or circular.

Some embodiments of the present disclosure relate to methods for processing one or more substrates. Examples include, but are not limited to, running one wafer on one heater through a plurality of spatially separated, different sequential environments; running two wafers on two wafer heaters through three environments (two identical environments, and one different environment between two similar environments); wafer 1 undergoing environment A and then B, and so on; while wafer 2 undergoes B and then A, and so on; one environment is left idle (without wafers); running two wafers in two first environments and two second environments, where both wafers undergo the same environments simultaneously (i.e., both wafers are in A, and then both move to B); four wafers for two A and two B environments; and two wafers being processed in the A environments while the other two wafers are being processed in the B environments. In some embodiments, the wafers are repeatedly exposed to Environment A and Environment B, and then to a third environment located in the same chamber.

In some embodiments, wafers are moved through a plurality of chambers for processing, wherein at least one of the chambers performs sequential processing using multiple spatially separated environments within the same chamber.

Some embodiments relate to a device having spatially separated processing environments within the same chamber, wherein the environments are at significantly different pressures (e.g., one is at <100 mT and the other is at >3T). In some embodiments, the heater rotation robot moves in the z-axis to seal each wafer/heater into the spatially separated environments.

Some embodiments include a structure built over the chamber having a vertical structural member that applies an upward force to the center of the chamber lid to counteract the deflection caused by the pressure of the atmosphere on the upper side and the vacuum on the other side. The magnitude of the force of the above structure can be mechanically adjusted based on the deflection of the top plate. The force adjustment can be done automatically using a feedback circuit and a force transducer, or manually, for example, using a screw that can be turned by an operator.

One or more embodiments of the present disclosure relate to processing chambers having at least two spatially separated processing environments, also referred to as processing stations. Some embodiments have more than two processing stations, and some embodiments have more than four processing stations. The processing environments can be coplanar with respect to the wafer(s) moving in a horizontal plane. The process environments are arranged in a circular arrangement. A rotatable structure having one to four (or more) individual wafer heaters mounted thereon moves the wafers in a circular path having a diameter similar to the process environments. Each heater can be temperature controlled and can have one or more concentric zones. For wafer loading, the rotatable structure can be lowered so that a vacuum robot can pick up finished wafers and place unprocessed wafers on lift pins positioned above each wafer heater (at a lower Z position). In operation, each wafer can be in an independent environment until the process is complete, after which the rotatable structure can rotate (90° for four stations, 120° for three stations) to move the wafers on the heaters to the next environment for processing. In one or more embodiments, the main deposition steps occur when the wafer is stationary in a processing station simulating a single wafer chamber.

In a spatial ALD deposition tool (or other spatial processing chamber), a wafer is moved into a first processing station and then subsequently into a second processing station. In some cases, the first and second processing stations are identical (i.e., co-located), which results in lack of uniformity in film thickness and lack of uniformity in deposition characteristics of the films (e.g., refractive index, wet etch rate, in-plane displacement, etc.). Additionally, the sequence of moving from one processing station to the next results in leading and trailing edge differences on the wafers due to different portions of the wafer being exposed to different processing environments at the stations.

The most obvious way to operate a spatial deposition tool is to simply move it back and forth between two separate processing stations. However, moving it between more than two processing stations presents challenges, such as rotating the connections for electrical, water, and gases, and alignment of each processing station with each wafer/substrate support surface (the tolerances for aligning them at any location are more difficult than simply aligning each pedestal with two processing stations).

Additionally, during conventional operation, as the wafer is loaded onto the substrate support and moved from a first processing station to a second processing station and then back to the first processing station, it has been observed that not all portions of the wafer on the substrate support will be in the same environment at the same time, resulting in leading and trailing edge differences.

In one or more embodiments, the wafers are loaded onto a substrate support and moved in a first direction from a first processing station to a second processing station, to the first processing station, and then back to the second processing station in a second direction, and then back to the first processing station, so as to average the time spent between the two types of processing stations. During such movements, it was observed that the averages for two of the wafers were different than for the other two wafers (e.g., if there was a hot/cold temperature, two of the wafers would be high at the edges and low in the center, whereas the other two wafers would be low at the edges and high in the center). In one or more embodiments, it has surprisingly been found that only averaging between (at least) four processing stations achieves a reasonable average with similar profiles across all the wafers. Accordingly, in one or more embodiments, the sequence of movements between processing stations is advantageously optimized to minimize the effects of not all portions of the wafer being in the same environment (e.g., temperature, pressure, reactive gases, etc.) simultaneously during movements between processing stations.

FIGS. 1 and 2 illustrate a processing chamber (100) according to one or more embodiments of the present disclosure. FIG. 1 illustrates a processing chamber (100) illustrated as a cross-sectional isometric view according to one or more embodiments of the present disclosure. FIG. 2 illustrates a cross-section of a processing chamber (100) according to one or more embodiments of the present disclosure. Accordingly, some embodiments of the present disclosure relate to processing chambers (100) that include a support assembly (200) and a top plate (300).

The processing chamber (100) has a housing (102) having walls (104) and a bottom (106). The housing (102), together with the top plate (300), defines an internal volume (109), also referred to as a processing volume.

The processing chamber (100) includes a plurality of processing stations (110). The processing stations (110) are positioned within the interior volume (109) of the housing (102) and are positioned in a circular arrangement around the rotational axis (211) of the support assembly (200). Each processing station (110) includes a gas injector (112) having a front surface (114). In some embodiments, the front surfaces (114) of each of the gas injectors (112) are substantially coplanar. The processing stations (110) are defined as areas within which processing can occur. For example, a processing station (110) may be defined by a substrate support surface (231) of heaters (230), as described below, and the front surfaces (114) of the gas injectors (112).

The processing stations (110) may be configured to perform any suitable process and provide any suitable process conditions. The type of gas injector (112) utilized will depend, for example, on the type of process being performed and the type of showerhead or gas injector. For example, a processing station (110) configured to operate as an atomic layer deposition device may have a showerhead or vortex type gas injector. In contrast, a processing station (110) configured to operate as a plasma station may have one or more electrode and/or ground plate configurations for generating plasma while allowing plasma gas to flow toward the wafer. The embodiment illustrated in FIG. 2 has a different type of processing station (110) on the left side of the drawing (processing station (110a)) than on the right side of the drawing (processing station (110b)). Suitable processing stations (110) include, but are not limited to, heat treatment stations, microwave plasma, three-electrode CCP, ICP, parallel plate CCP, UV exposure, laser treatment, pumping chambers, annealing stations, and metrology stations.

Figures 3-6 illustrate support assemblies (200) according to one or more embodiments of the present disclosure. The support assembly (200) includes a rotatable central base (210). The rotatable central base (210) may have a symmetrical or asymmetrical shape and defines an axis of rotation (211). The axis of rotation (211) extends in a first direction, as seen in Figure 6. While the first direction may be referred to as along the vertical direction or the z-axis, it will be appreciated that the use of the term “vertical” in this manner is not limited to a direction perpendicular to the pull of gravity.

The support assembly (200) includes at least two support arms (220) connected to and extending from a central base (210). The support arms (220) have an inner end (221) and an outer end (222). The inner end (221) contacts the central base (210) such that when the central base (210) rotates about the rotational axis (211), the support arms (220) also rotate. The support arms (220) may be connected to the central base (210) at the inner end (221) by fasteners (e.g., bolts) or by being formed integrally with the central base (210).

In some embodiments, the support arms (220) extend orthogonally to the axis of rotation (211) such that one of the inner ends (221) or the outer ends (222) is further from the axis of rotation (211) than the other of the inner ends (221) and the outer ends (222) of the same support arm (220). In some embodiments, the inner end (221) of the support arm (220) is closer to the axis of rotation (211) than the outer end (222) of the same support arm (220).

The number of support arms (220) of the support assembly (200) can vary. In some embodiments, there are at least two support arms (220), at least three support arms (220), at least four support arms (220), or at least five support arms (220). In some embodiments, there are three support arms (220). In some embodiments, there are four support arms (220). In some embodiments, there are five support arms (220). In some embodiments, there are six support arms (220).

The support arms (220) may be arranged symmetrically around the central base (210). For example, in a support assembly (200) having four support arms (220), each of the support arms (220) are positioned at 90° intervals around the central base (210). In a support assembly (200) having three support arms (220), the support arms (220) are positioned at 120° intervals around the central base (210). In other words, in embodiments having four support arms (220), the support arms are arranged to provide four-fold symmetry about the axis of rotation (211). In some embodiments, the support assembly (200) has n support arms (220), and the n support arms (220) are arranged to provide n-fold symmetry about the axis of rotation (211).

The heaters (230) are positioned at the outer ends (222) of the support arms (220). In some embodiments, each support arm (220) has a heater (230). The centers of the heaters (230) are positioned at a distance from the rotation axis (211) such that the heaters (230) move in a circular path when the central base (210) rotates.

The heaters (230) have support surfaces (231) capable of supporting a wafer. In some embodiments, the heater (230) support surfaces (231) are substantially coplanar. As used in this manner, “substantially coplanar” means that planes formed by individual support surfaces (231) are within ±5°, ±4°, ±3°, ±2°, or ±1° of planes formed by the other support surfaces (231).

In some embodiments, the heaters (230) are positioned directly on the outer ends (222) of the support arms (220). In some embodiments, as illustrated in the drawings, the heaters (230) are elevated above the outer ends (222) of the support arms (220) by heater standoffs (234). The heater standoffs (234) can be any size and length to increase the height of the heaters (230).

In some embodiments, a channel (236) is formed in one or more of the central base (210), the support arms (220), and/or the heater standoffs (234). The channel (236) may be used to route electrical connections or provide gas flow.

The heaters may be any suitable type of heater known to those skilled in the art. In some embodiments, the heaters are resistive heaters having one or more heating elements within the heater body.

The heaters (230) of some embodiments include additional components. For example, the heaters may include an electrostatic chuck. The electrostatic chuck may include various wires and electrodes to allow a wafer positioned on the heater support surface (231) to be held in place while the heater is moved. This allows the wafer to be chucked on the heater at the beginning of the process and held in the same position on that same heater while being moved to different process zones. In some embodiments, the wires and electrodes are routed through channels (236) of the support arms (220). FIG. 7 illustrates an enlarged view of a portion of the support assembly (200) in which the channel (236) is depicted. The channel (236) extends along the support arm (220) and the heater standoff (234). The first electrode (251a) and the second electrode (251b) are in electrical communication with the heater (230) or with a component (e.g., a resistive wire) within the heater (230). A first wire (253a) is connected from a first connector (252a) to a first electrode (251a). A second wire (253b) is connected from a second connector (252b) to a second electrode (251b).

In some embodiments, a temperature measurement device (e.g., a pyrometer, a thermistor, a thermocouple) is positioned within the channel (236) to measure one or more of the temperature of the heater (230) or the temperature of the substrate above the heater (230). In some embodiments, control and/or measurement wires for the temperature measurement device are routed through the channel (236). In some embodiments, one or more temperature measurement devices are positioned within the process chamber (100) to measure the temperature of the heaters (230) and/or the wafer above the heaters (230). Suitable temperature measurement devices are known to those of ordinary skill in the art and include, but are not limited to, optical pyrometers and contact thermocouples.

The wires can be routed through the support arms (220) and the support assembly (200) to be connected to a power source (not shown). In some embodiments, the connection to the power source allows continuous rotation of the support assembly (200) without tangling or breaking the wires (253a, 253b). In some embodiments, as shown in FIG. 7, the first wire (253a) and the second wire (253b) extend along a channel (236) of the support arm (220) to the central base (210). At the central base (210), the first wire (253a) is connected to a central first connector (254a) and the second wire (253b) is connected to a central second connector (254b). The central connectors (254a, 254b) may be part of the connection plate (258), such that power or electronic signals may pass through the central connectors (254a, 254b). In the illustrated embodiment, the support assembly (200) can rotate continuously without twisting or breaking the wires, because the wires are terminated at the central base (210). The second connector is on the opposite side of the connection plate (258) (outside the processing chamber).

In some embodiments, the wires are directly connected to a power source or electrical component outside the processing chamber through the channel (236). In these types of embodiments, the wires have sufficient slack to allow the support assembly (200) to rotate a limited amount without kinking or breaking the wires. In some embodiments, the support assembly (200) is rotated less than about 1080°, 990°, 720°, 630°, 360°, or 270° before the direction of rotation is reversed. This allows the heaters to be rotated through each of the stations without breaking the wires.

Referring again to FIGS. 3-6, the heater (230) and the support surface (231) may include one or more gas exhaust ports for providing a flow of backside gas. This may assist in removal of the wafer from the support surface (231). As illustrated in FIGS. 4 and 5, the support surface (231) includes a plurality of apertures (237) and gas channels (238). The apertures (237) and/or the gas channels (238) may be in fluid communication with one or more of a vacuum source or a gas source (e.g., a purge gas). In these types of embodiments, a hollow tube may be included to allow fluid communication between the apertures (237) and/or the gas channels (238) and the gas source.

In some embodiments, the heater (230) and/or the support surface (231) are configured as an electrostatic chuck. In these types of embodiments, the electrodes (251a, 251b) (see FIG. 7) may include control lines for the electrostatic chuck.

Some embodiments of the support assembly (200) include a sealing platform (240). The sealing platform has a top surface (241), a bottom surface, and a thickness. The sealing platform (240) can be positioned around the heaters (230) to help provide a seal or barrier to minimize gas flow into the area beneath the support assembly (200).

In some embodiments, as illustrated in FIG. 4, the sealing platforms (240) are ring-shaped and positioned around each heater (230). In the illustrated embodiment, the sealing platforms (240) are positioned beneath the heater (230) such that the top surface (241) of the sealing platforms (240) is beneath the support surface (231) of the heater.

The sealing platforms (240) may have a number of purposes. For example, the sealing platforms (240) may be used to increase the temperature uniformity of the heater (230) by increasing the thermal mass. In some embodiments, the sealing platforms (240) may be formed integrally with the heater (230) (e.g., see FIG. 6 ). In some embodiments, the sealing platforms (240) are separate from the heater (230). For example, the embodiment illustrated in FIG. 8 has the sealing platforms (240) as a separate component connected to the heater standoffs (234), such that the top surface (241) of the sealing platforms (240) is below the level of the support surface (231) of the heater (230).

In some embodiments, the sealing platforms (240) act as a holder for the support plate (245). In some embodiments, as illustrated in FIG. 5, the support plate (245) is a single component that surrounds all of the heaters (230) with a plurality of openings (242) to allow access to the support surface (231) of the heaters (230). The openings (242) may allow the heaters (230) to pass through the support plate (245). In some embodiments, the support plate (245) is secured such that the support plate (245) rotates and moves vertically with the heaters (230).

In one or more embodiments, the support assembly (200) is a drum-shaped component, such as a cylindrical body having a top surface (246) configured to support a plurality of wafers, as illustrated in FIG. 20 . The top surface (246) of the support assembly (200) has a plurality of recessed portions (pockets (257)) sized to support one or more wafers during processing. In some embodiments, the pockets (257) have a depth that is approximately the same as the thickness of the wafers to be processed, such that the top surface of the wafers is substantially coplanar with the top surface (246) of the cylindrical body. An example of such a support assembly (200) can be envisioned as a modification of FIG. 5 , excluding the support arms (220). FIG. 20 illustrates a cross-sectional view of an embodiment of a support assembly (200) utilizing a cylindrical body. The support assembly (200) includes a plurality of pockets (257) sized to support wafers for processing. In the illustrated embodiment, the lowermost portion of the pockets (257) is a support surface (231) of a heater (230). Power connections to the heaters (230) can be routed through the support posts (227) and the support plate (245). The heaters (230) can be independently powered to control the temperature of individual pockets (257) and wafers.

Referring to FIG. 9, in some embodiments, the support plate (245) has a top surface (246) forming a major plane (248) that is substantially parallel to a major plane (247) formed by the support surface (231) of the heater (230). In some embodiments, the support plate (245) has a top surface (246) forming a major plane (248) that is a distance (D) above the major plane (247) of the support surface (231). In some embodiments, the distance (D) is substantially equal to a thickness of the wafer (260) to be processed, such that the wafer (260) surface (261) is coplanar with the top surface (246) of the support plate (245), as illustrated in FIG. 6. As used in this manner, the term “substantially coplanar” means that the major planes formed by the surfaces (261) of the wafers (260) are within ±1 mm, ±0.5 mm, ±0.4 mm, ±0.3 mm, ±0.2 mm, or ±0.1 mm of coplanarity.

Referring to FIG. 9 , some embodiments of the present disclosure have separate components that constitute the support surfaces for processing. Here, the sealing platform (240) is a separate component from the heater (230) and is positioned such that the top surface (241) of the sealing platform (240) is below the support surface (231) of the heater (230). The distance between the top surface (241) of the sealing platform (240) and the support surface (231) of the heater (230) is sufficient to allow the support plate (245) to be positioned on the sealing platforms (240). The thickness of the support plate (245) and/or the position of the sealing platform (240) can be controlled such that the distance (D) between the top surface (261) of the wafer (260) (see FIG. 6 ) and the top surface (246) of the support plate (245) is sufficient so that the top surface (261) of the wafer (260) is substantially flush with the top surface (246) of the support plate (245).

In some embodiments, as illustrated in FIG. 9, the support plate (245) is supported by the support posts (227). The support posts (227) may be useful in preventing sagging of the center of the support plate (245) when a single component platform is used. In some embodiments, the sealing platforms (240) are not present, and the support posts (227) are the primary supports for the support plate (245).

The support plate (245) may have a variety of configurations for interacting with the various configurations of the heaters (230) and the sealing platforms (240). FIG. 10A illustrates a top isometric view of the support plate (245) according to one or more embodiments of the present disclosure. FIG. 10B illustrates a cross-sectional view of the support plate (245) of FIG. 10A taken along line (10B-10B'). In this embodiment, the support plate (245) is a planar component, wherein the top surface (246) and the bottom surface (249) are substantially flat and/or substantially coplanar. The illustrated embodiment may be particularly useful when the sealing platform (240) is used to support the support plate (245), as illustrated in FIG. 9.

FIG. 11A illustrates a bottom isometric view of another embodiment of a support plate (245) according to one or more embodiments of the present disclosure. FIG. 11B illustrates a cross-sectional view of the support plate (245) of FIG. 11A taken along line (11B-11B'). In this embodiment, each of the openings (242) has a protruding ring (270) around an outer perimeter of the opening (242) on a lowermost surface (249) of the support plate (245).

FIG. 12A illustrates a bottom-up isometric view of another embodiment of a support plate (245) according to one or more embodiments of the present disclosure. FIG. 12B illustrates a cross-sectional view of the support plate (245) of FIG. 12A taken along line (12B-12B'). In this embodiment, each of the openings (242) has a sunken ring (272) of a lowermost surface (249) of the support plate (245) around the outer perimeter of the opening (242). The sunken ring (272) creates a sunken lowermost surface (273). This type of embodiment may be useful where the sealing platforms (240) are absent or are coplanar with the support surfaces (231) of the heaters (230). The sunken lower surface (273) can be positioned on the support surface (231) of the heater (230) such that the lower portion of the support plate (245) extends below the support surface (231) of the heater (230) around the sides of the heater (230).

Some embodiments of the present disclosure relate to top plates (300) for multi-station processing chambers. Referring to FIGS. 1 and 13, the top plate (300) has a top surface (301) and a bottom surface (302) defining a thickness of a cover, and one or more edges (303). The top plate (300) includes at least one opening (310) extending through its thickness. The openings (310) are sized to allow for the addition of a gas injector (112) that can form a process station (110).

FIG. 14 illustrates an exploded view of a processing station (110) according to one or more embodiments of the present disclosure. The illustrated processing station (110) includes three main components: a top plate (300) (also referred to as a cover), a pump/purge insert (330), and a gas injector (112). The gas injector (112) illustrated in FIG. 14 is a showerhead type gas injector. In some embodiments, the insert is connected to or in fluid communication with a vacuum portion (exhaust portion). In some embodiments, the insert is connected to or in fluid communication with a purge gas source.

The openings (310) of the top plate (300) may be uniformly sized or may have different sizes. Differently sized/shaped gas injectors (112) may be used with a pump/purge insert (330) suitably shaped to transition from the opening (310) to the gas injector (112). For example, as illustrated, the pump/purge insert (330) includes a top portion (331) and a bottom portion (333) with side walls (335). When inserted into the opening (310) of the top plate (300), a ledge (334) adjacent the bottom portion (333) may be positioned on a shelf (315) formed in the opening (310). In some embodiments, the shelf (315) is not present in the opening, and the flange portion (337) of the pump/purge insert (330) is positioned on the top of the top plate (300). In the illustrated embodiment, the ledge (334) is positioned on the shelf (315) with an o-ring (314) positioned therebetween to help form a hermetic seal.

In some embodiments, there is one or more purge rings (309) (see FIG. 13) on the top plate (300). The purge rings (309) may be in fluid communication with a purge gas plenum (not shown) or a purge gas source (not shown) to provide a positive purge gas flow to prevent leakage of process gases from the process chamber.

The pump/purge insert (330) of some embodiments includes a gas plenum (336) having at least one opening (338) in the bottom (333) of the pump/purge insert (330). The gas plenum (336) typically has an inlet (not shown) near the top (331) or sidewall (335) of the pump/purge insert (330).

In some embodiments, the plenum (336) may be filled with a purge or inert gas that can pass through an opening (338) in the lowermost portion (333) of the pump/purge insert (330). The gas flow through the opening (338) may help create a gas curtain type barrier to prevent leakage of process gases from the interior of the processing chamber.

In some embodiments, the plenum (336) is connected to or in fluid communication with a vacuum source. In such embodiments, gases flow into the plenum (336) through an opening (338) in the lowermost portion (333) of the pump/purge insert (330). The gases can be evacuated from the plenum to an exhaust. Such an arrangement can be used to evacuate gases from a process station (110) during use.

The pump/purge insert (330) includes an opening (339) into which a gas injector (112) can be inserted. The illustrated gas injector (112) has a flange (342) that can contact a ledge (332) adjacent the top (331) of the pump/purge insert (330). The diameter or width of the gas injector (112) can be any suitable size that can fit within the opening (339) of the pump/purge insert (330). This allows different types of gas injectors (112) to be used within the same opening (310) of the top plate (300).

Referring to FIGS. 2 and 15, some embodiments of the top plate (300) include a bar (360) passing over a central portion of the top plate (300). The bar (360) can be connected to the top plate (300) near the center using a connector (367). The connector (367) can be used to apply a force orthogonal to the top portion (331) or the bottom portion (333) of the top plate (300) to compensate for bowing of the top plate (300) as a result of pressure differences or due to the weight of the top plate (300). In some embodiments, the bar (360) and the connector (367) are capable of compensating for a deflection of up to about 1.5 mm or equal to about 1.5 m at the center of the top plate having a width of about 1.5 m and a thickness of up to about 100 mm or equal to about 1.5 mm. In some embodiments, a motor (365) or actuator may be connected to a connector (367) and cause a change in directional force applied to the top plate (300). The motor (365) or actuator may be supported on the bar (360). The illustrated bar (360) contacts the edges of the top plate (300) at two locations. However, one of ordinary skill in the art will recognize that there may be one connection location or more than two connection locations.

In some embodiments, as illustrated in FIG. 2, the support assembly (200) includes at least one motor (250). The at least one motor (250) is coupled to the central base (210) and configured to rotate the support assembly (200) about the rotational axis (211). In some embodiments, the at least one motor is configured to move the central base (210) in a direction along the rotational axis (211). For example, in FIG. 2, the motor (255) is coupled to the motor (250) and can move the support assembly (200) along the rotational axis (211). In other words, the illustrated motor (255) can move the support assembly (200) along the z-axis, vertically, or orthogonally to the movement caused by the motor (250). In some embodiments, as illustrated, there is a first motor (250) for rotating the support assembly (200) about the rotation axis (211), and a second motor (255) for moving the support assembly (200) along the rotation axis (211) (i.e., along the z-axis or vertically).

Referring to FIGS. 2 and 16, one or more vacuum streams and/or purge gas streams may be used to help isolate one or more process stations (110a) from adjacent process stations (110b). A purge gas plenum (370) may be in fluid communication with a purge gas port (371) at the outer perimeter of the process station (110). In the embodiment illustrated in FIG. 16, the purge gas plenum (370) and the purge gas port (371) are located in the top plate (300). A plenum (336), illustrated as part of the pump/purge insert (330), is in fluid communication with an aperture (338) that operates as a pump/purge gas port. The purge gas port (371) and the purge gas plenum (370), as illustrated in FIG. 13, and the vacuum port (aperture (338)) may extend around the perimeter of the process station (110) to form a gas curtain. A gas curtain can help minimize or eliminate leakage of process gases into the interior volume (109) of the processing chamber.

In the embodiment illustrated in FIG. 16, differential pumping may be used to help isolate the process station (110). A pump/purge insert (330) is shown in contact with a heater (230) and a support plate (245) having o-rings (329). The o-rings (329) are positioned on either side of an opening (338) in fluid communication with a plenum (336). One o-ring (329) is positioned within the perimeter of the opening (338) and the other o-ring (329) is positioned outside the perimeter of the opening (338). The combination of the o-rings (329) and the pump/purge plenum (336) with the opening (338) can provide a sufficient pressure differential to maintain a hermetic seal of the process station (110) from the interior volume (109) of the processing chamber (100). In some embodiments, there is an o-ring (329) positioned either internally or externally around the perimeter of the opening (338). In some embodiments, there are two o-rings (329) positioned around the perimeter of a purge gas port (371) in fluid communication with the plenum (370), one internally and one externally. In some embodiments, there is an o-ring (329) positioned either internally or externally around the perimeter of a purge gas port (371) in fluid communication with the plenum (370).

The boundary of the process station (110) may be considered the area where the process gas is isolated by the pump/purge insert (330). In some embodiments, the outer boundary of the process station (110) is the outermost edge (381) of the opening (338) in fluid communication with the plenum (336) of the pump/purge insert (330), as illustrated in FIGS. 14 and 16.

The number of process stations (110) can vary depending on the number of heaters (230) and support arms (220). In some embodiments, there are an equal number of heaters (230), support arms (220), and process stations (110). In some embodiments, the heaters (230), support arms (220), and process stations (110) are configured such that each of the support surfaces (231) of the heaters (230) can be positioned adjacent to the front surfaces (214) of different process stations (110) simultaneously. In other words, each of the heaters is positioned at a process station simultaneously.

The spacing of the processing stations (110) around the processing chamber (100) can vary. In some embodiments, the processing stations (110) are sufficiently close to each other to minimize the space between the stations, so that the substrate can be moved quickly between the process stations (110) while spending minimal time and transport distance outside of one of the stations. In some embodiments, the process stations (110) are positioned sufficiently close together such that a wafer being transported on the support surface (231) of the heater (230) is always within one of the process stations (110).

FIG. 17 illustrates a processing platform (400) according to one or more embodiments of the present disclosure. The embodiment illustrated in FIG. 17 is merely representative of one possible configuration and should not be considered limiting the scope of the present disclosure. For example, in some embodiments, the processing platform (400) has one or more of a different number of processing chambers (100), buffer stations (420), and/or robot (430) configurations than the illustrated embodiment.

An exemplary processing platform (400) includes a central transfer station (410) having a plurality of sides (411, 412, 413, 414). The illustrated transfer station (410) has a first side (411), a second side (412), a third side (413), and a fourth side (414). While four sides are illustrated, those skilled in the art will appreciate that any suitable number of sides may be present for the transfer station (410), depending on the overall configuration of the processing platform (400), for example. In some embodiments, the transfer station (410) has three sides, four sides, five sides, six sides, seven sides, or eight sides.

The transfer station (410) has a robot (430) positioned therein. The robot (430) may be any suitable robot capable of moving a wafer during processing. In some embodiments, the robot (430) has a first arm (431) and a second arm (432). The first arm (431) and the second arm (432) may be moved independently of the other arms. The first arm (431) and the second arm (432) may be moved in the x-y plane and/or along the z-axis. In some embodiments, the robot (430) includes a third arm (not shown) or a fourth arm (not shown). Each of the arms may be moved independently of the other arms.

The illustrated embodiment includes six processing chambers (100), two connected to each of the second side (412), third side (413) and fourth side (414) of the central transfer station (410). Each of the processing chambers (100) can be configured to perform different processes.

The processing platform (400) may also include one or more buffer stations (420) connected to the first side (411) of the central transfer station (410). The buffer stations (420) may perform the same or different functions. For example, the buffer stations may hold cassettes of wafers that are processed and returned to their original cassettes, or one of the buffer stations may hold unprocessed wafers that are transferred to another buffer station after processing. In some embodiments, one or more of the buffer stations are configured to preprocess, preheat, or clean the wafers before and/or after processing.

The processing platform (400) may also include one or more slit valves (418) between the central transfer station (410) and any of the processing chambers (100). The slit valves (418) may be opened and closed to isolate the internal volume within the processing chamber (100) from the environment within the central transfer station (410). For example, if a processing chamber is to generate plasma during processing, it may be helpful to close the slit valve for that processing chamber to prevent stray plasma from damaging the robot in the transfer station.

The processing platform (400) may be connected to a factory interface (450) to allow wafers or cassettes of wafers to be loaded into the processing platform (400). A robot (455) within the factory interface (450) may be used to move the wafers or cassettes into and out of the buffer stations. The wafers or cassettes may be moved by a robot (430) of a central transfer station (410) within the processing platform (400). In some embodiments, the factory interface (450) is a transfer station of another cluster tool (i.e., another multi-chamber processing platform).

A controller (495) may be provided and coupled to various components of the processing platform (400) to control their operation. The controller (495) may be a single controller that controls the entire processing platform (400), or multiple controllers that control individual portions of the processing platform (400). For example, the processing platform (400) may include separate controllers for each of the individual processing chambers (100), the central transfer station (410), the factory interface (450), and the robot (430).

In some embodiments, the controller (495) includes a central processing unit (CPU) (496), memory (497), and support circuits (498). The controller (495) may control the processing platform (400) directly, or through computers (or controllers) associated with particular process chambers and/or support system components.

The controller (495) may be any form of general purpose computer processor that can be used in an industrial setting to control the various chambers and sub-processors. The memory (497) or computer readable medium of the controller (495) may be one or more of readily available memory, such as random access memory (RAM), read only memory (ROM), a floppy disk, a hard disk, an optical storage medium (e.g., a compact disc or a digital video disc), a flash drive, or any other form of digital storage, either local or remote. The memory (497) may contain a set of instructions operable by the processor (CPU (496)) to control parameters and components of the processing platform (400).

Support circuits (498) are coupled to the CPU (496) to support the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry, and subsystems. One or more processes may be stored in memory (498) as software routines that, when executed or invoked by the processor, cause the processor to control the operation of the processing platform (400) or individual processing chambers in the manner described herein. The software routines may also be stored and/or executed by a second CPU (not shown) remotely located from the hardware controlled by the CPU (496).

Some or all of the processes and methods of the present disclosure may also be implemented in hardware. Thus, the processes may be implemented in software, and may be executed in hardware using a computer system, such as as an application-specific integrated circuit or other type of hardware implementation, or as a combination of software and hardware. The software routines, when executed by the processor, transform a general-purpose computer into a special-purpose computer (a controller) that controls the chamber operations so that the processes are performed.

In some embodiments, the controller (495) has one or more configurations for executing individual processes or sub-processes to perform the method. The controller (495) can be configured to be coupled to intermediate components and to operate them to perform the functions of the methods. For example, the controller (495) can be configured to be coupled to and control one or more of gas valves, actuators, motors, slit valves, vacuum controllers, or other components.

Figures 18A through 18I illustrate various configurations of processing chambers (100) having different process stations (110). The lettered circles represent different process stations (110) and process conditions. For example, in Figure 18A, there are four process stations (110), each with a different letter. This represents four process stations (110), each station having different conditions than the other stations. As indicated by the arrows, the process can occur by moving the heaters with wafers to stations A through D. After exposure to D, the cycle can continue or be reversed.

In FIG. 18B, two or four wafers can be processed simultaneously, with the wafers being moved back and forth between positions A and B on the heaters. Two wafers can start at position A and two wafers can start at position B. The independent process stations (110) allow two of the stations to be turned off during the first cycle so that each wafer starts with an exposure of A. The heaters and wafers can be rotated sequentially in a clockwise or counterclockwise direction. In some embodiments, the heaters and wafers are rotated 90° in a first direction (e.g., from A to B) and then rotated 90° in a second direction (e.g., from B back to A). This repeated rotation allows four wafers/heaters to be processed without rotating the support assembly more than about 90°.

The embodiment illustrated in FIG. 18b may also be useful for processing two wafers at four process stations (110). This may be particularly useful when one of the processes is at a very different pressure or when the A and B process times are very different.

In Figure 18c, three wafers can be processed in an ABC process in a single processing chamber (100). One station can be turned off or perform a different function (e.g., preheating).

In Fig. 18d, two wafers can be processed in an AB-processing process. For example, the wafers can be placed only on the B heaters. A quarter rotation clockwise will place one wafer at the A station and the second wafer at the T station. Reversing this will move both wafers to the B stations, and another quarter rotation counterclockwise will place the second wafer at the A station and the first wafer at the B station.

In Fig. 18e, up to four wafers can be processed simultaneously. For example, if station A is configured to perform a CVD or ALD process, four wafers can be processed simultaneously.

FIGS. 18F through 18I illustrate similar types of configurations for a processing chamber (100) having three process stations (110). Briefly, in FIG. 18F, a single wafer (or more than one wafer) can undergo an ABC process. In FIG. 18G, two wafers can undergo an AB process by placing one at location A and the other at one of the B locations. The wafers can then be moved back and forth again, such that the wafer starting at location B moves to location A in the first move and then moves back to the same B location. In FIG. 18H, the wafer can undergo an AB-process. In FIG. 18I, three wafers can be processed simultaneously.

Figures 19a and 19b illustrate another embodiment of the present disclosure. Figure 19a shows a partial view of the heater (230) and the support plate (245) rotated to a position below the process station (110) such that the wafer (101) is adjacent to the gas injector (112). An O-ring (329) on the support plate (245) or on the outer portion of the heater (230) is in a relaxed state.

FIG. 19b illustrates the support plate (245) and the heater (230) after they have been moved toward the process station (110) such that the support surface (231) of the heater (230) contacts or nearly contacts the front surface (114) of the gas injector (112) within the process station (110). In this position, the O-ring (329) is compressed to form a seal around the outer edge of the support plate (245) or the outer portion of the heater (230). This allows the wafer (101) to be moved as close to the gas injector (112) as possible, minimizing the volume of the reaction zone (219), and thus allowing the reaction zone (219) to be purged quickly.

Gases that may flow out of the reaction zone (219) are evacuated through the opening (338) into the plenum (336) and into an exhaust or foreline (not shown). A purge gas curtain outside the opening (338) may be created by the purge gas plenum (370) and the purge gas ports (371). Additionally, the gap (137) between the heater (230) and the support plate (245) may further curtain-like isolate the reaction zone (219) and help prevent reactive gases from flowing into the interior volume (109) of the processing chamber (100).

Referring again to FIG. 17, the controller (495) of some embodiments comprises: a configuration for moving a substrate on the robot between a plurality of processing chambers; a configuration for loading and/or unloading substrates in the system; a configuration for opening/closing slit valves; a configuration for providing power to one or more of the heaters; a configuration for measuring a temperature of the heaters; a configuration for measuring a temperature of wafers on the heaters; a configuration for loading or unloading wafers from the heaters; a configuration for providing feedback between the temperature measurement and the heater power control; a configuration for rotating the support assembly about a rotational axis; a configuration for moving the support assembly along the rotational axis (i.e., along the z-axis); a configuration for setting or changing the rotational speed of the support assembly; a configuration for providing a flow of gas to the gas injector; a configuration for providing power to one or more electrodes to generate a plasma in the gas injector; a configuration for controlling a power supply to a plasma source; a configuration for controlling a frequency and/or power of the plasma source power supply; and/or has one or more configurations selected from the configurations for providing control over the thermal annealing treatment station.

One or more embodiments relate to a method of operating a processing chamber (100). In one or more embodiments, the method comprises providing a processing chamber (100) comprising x spatially separated isolated processing stations (110). In one or more embodiments, x is an integer in the range of 2 to 10. In one or more embodiments, x refers to the number of substrate support surfaces. In other embodiments, x refers to one or more of the number of substrate surfaces or the number of processing stations. In some embodiments, the number of substrate support surfaces and the number of processing stations are equal and equal to x. In one or more embodiments, x is an integer in the range of 2 to 6. In one or more embodiments, x is selected from 2, 3, 4, 5, 6, 7, 8, 9, or 10. In other embodiments, x is selected from 2, 3, 4, 5, or 6. In one or more embodiments, x is 4.

In some embodiments, x' refers to a number of spatially separated isolated processing stations. The spatially separated isolated processing stations refer to different process conditions at the processing stations. For example, in a system where there are four processing stations with two different process conditions, x' is equal to 2. Embodiments of this type have the same number of stations having each type of process condition. In one or more embodiments, the processing chamber includes four processing stations separated into alternating first processing stations and second processing stations such that the first processing stations have a first process condition, the second processing station has a second process condition, and a wafer rotating around all processing stations will be exposed to each process condition twice. For example, FIG. 7 illustrates an embodiment where there are two different types of process conditions (A and B) at the four processing stations. In this example, x = 4 and x' = 2.

In one or more embodiments, the processing chamber (100) has a processing chamber temperature, and each of the processing stations (110) independently has a processing station temperature, wherein the processing chamber temperature is different from the processing station temperatures. In one or more embodiments, a substrate support assembly (200) having a plurality of substrate support surfaces (231) aligned with x spatially separated isolated processing stations (110) is rotated (rx-1) times such that each substrate support surface (231) rotates (360/x) degrees in a first direction relative to an adjacent substrate support surface (231). As used herein, the term "(rx-1)" refers to a number of rotations (i.e., number of rotations) of the substrate support assembly. In one or more embodiments, r represents a number of processing cycles (i.e., ALD cycles) and is an integer greater than or equal to 1. In some embodiments, r is greater than 10, greater than 50, or greater than 100. In one or more embodiments, r is in the range of 1 to 10, or in the range of 1 to 8, or in the range of 1 to 6, or in the range of 1 to 4, or is selected from 1, 2, 3, or 4. In other embodiments, r is 1. In still further embodiments, r is 2, 3, or 4.

In one or more embodiments, the substrate support assembly (200) is then rotated (rx-1) degrees such that each substrate support surface (231) rotates (360/x) degrees in a second direction relative to an adjacent substrate support surface (231).

In one or more embodiments, the first direction and the second direction are opposite to each other. In one or more embodiments, the first direction is selected from the counterclockwise direction or the clockwise direction. In one or more embodiments, the second direction is the other one of the counterclockwise direction or the clockwise direction.

In one or more embodiments, the plurality of substrate support surfaces (231) are substantially coplanar. As used in this manner, “substantially coplanar” means that planes formed by the individual support surfaces (231) are within ±5°, ±4°, ±3°, ±2°, or ±1° of planes formed by the other support surfaces (231). In some embodiments, the term “substantially coplanar” means that planes formed by the individual support surfaces are within ±50 μm, ±40 μm, ±30 μm, ±20 μm, or ±10 μm.

In one or more embodiments, the substrate support surfaces include heaters (230) capable of supporting the wafer. In some embodiments, the substrate support surfaces or heaters (230) include electrostatic chucks.

In one or more embodiments, the method further comprises controlling one or more of the processing chamber temperature or the processing station temperatures.

In one or more embodiments, the method further comprises the step of controlling the speed of rotation (rx-1) of the plurality of substrate support assemblies (200).

One or more embodiments of the present disclosure relate to a method of operating a processing chamber (100). In one or more embodiments, the method comprises providing a processing chamber (100) having at least two different processing stations (110) and a substrate support assembly (200) including a first substrate support surface (231), a second substrate support surface (231), a third substrate support surface (231), and a fourth substrate support surface (231), each of the substrate support surfaces (231) being aligned with the processing station (110) in an initial position. A first wafer on the first substrate support surface (231) is exposed to a first process condition. The substrate support assembly (200) is rotated in a first direction to move the first wafer to an initial position on the second substrate support surface (231). The first wafer is exposed to a second process condition. The substrate support assembly (200) is rotated in the first direction to move the first wafer to an initial position on the third substrate support surface (231). A first wafer is exposed to a third process condition. The substrate support assembly (200) is rotated in a first direction to move the first wafer to an initial position on a fourth substrate support surface (231). The first wafer is exposed to a fourth process condition. The substrate support assembly (200) is rotated in a second direction to move the first wafer to an initial position on a third substrate support surface (231). The first wafer is exposed to the third process condition. The substrate support assembly (200) is rotated in the second direction to move the first wafer to an initial position on a second substrate support surface (231). The first wafer is exposed to a second process condition. The substrate support assembly (200) is rotated in the second direction to move the first wafer to an initial position on the first substrate support surface (231), and the first wafer is exposed to the first process condition. In one or more embodiments, the process condition comprises one or more of temperature, pressure, reactive gas, and the like.

In one or more embodiments, the method comprises: exposing a second wafer on a second substrate support surface (231) to a second process condition; rotating the substrate support assembly (200) in a first direction to move the second wafer to an initial position on a third substrate support surface (231); exposing the second wafer to the third process condition; rotating the substrate support assembly (200) in the first direction to move the second wafer to an initial position on a fourth substrate support surface (231); exposing the second wafer to the fourth process condition; rotating the substrate support assembly (200) in the first direction to move the second wafer to an initial position on the first substrate support surface (231); exposing the second wafer to the first process condition; rotating the substrate support assembly (200) in the second direction to move the second wafer to an initial position on the fourth substrate support surface (231); exposing the second wafer to the fourth process condition; The method further comprises: rotating the substrate support assembly (200) in a second direction to move the second wafer to an initial position on the third substrate support surface (231); exposing the second wafer to a third process condition; rotating the substrate support assembly (200) in the second direction to move the second wafer to an initial position on the second substrate support surface (231); and exposing the second wafer to a second process condition.

In one or more embodiments, the method comprises: exposing a third wafer on a third substrate support surface (231) to a third process condition; rotating the substrate support assembly (200) in a first direction to move the third wafer to an initial position on a fourth substrate support surface (231); exposing the third wafer to the fourth process condition; rotating the substrate support assembly (200) in the first direction to move the third wafer to an initial position on a first substrate support surface (231); exposing the third wafer to the first process condition; rotating the substrate support assembly (200) in the first direction to move the third wafer to an initial position on a second substrate support surface (231); exposing the third wafer to a second process condition; rotating the substrate support assembly (200) in the second direction to move the third wafer to an initial position on the first substrate support surface (231); exposing the third wafer to the first process condition; The step of rotating the substrate support assembly (200) in the second direction to move the third wafer to an initial position on the fourth substrate support surface (231); the step of exposing the third wafer to a fourth process condition; the step of rotating the substrate support assembly (200) in the second direction to move the third wafer to an initial position on the third substrate support surface (231); and the step of exposing the third wafer to a third process condition.

In other embodiments, the method comprises: exposing a fourth wafer on a fourth substrate support surface (231) to a fourth process condition; rotating the substrate support assembly (200) in a first direction to move the fourth wafer to an initial position on the first substrate support surface (231); exposing the fourth wafer to the first process condition; rotating the substrate support assembly (200) in the first direction to move the fourth wafer to an initial position on the second substrate support surface (231); exposing the fourth wafer to a second process condition; rotating the substrate support assembly (200) in the first direction to move the fourth wafer to an initial position on the third substrate support surface (231); exposing the fourth wafer to the third process condition; rotating the substrate support assembly (200) in the second direction to move the fourth wafer to an initial position on the second substrate support surface (231); exposing the fourth wafer to the second process condition; The method further comprises: rotating the substrate support assembly (200) in a second direction to move the fourth wafer to an initial position on the first substrate support surface (231); exposing the fourth wafer to a first process condition; rotating the substrate support assembly (200) in the second direction to move the fourth wafer to an initial position on the fourth substrate support surface (231); and exposing the fourth wafer to a fourth process condition.

FIG. 21 depicts a flow diagram of a method (600) of depositing a film, according to one or more embodiments of the present disclosure. FIG. 22 illustrates a processing chamber configuration, according to one or more embodiments of the present disclosure. Referring to FIGS. 21 and 22 , the method (600) begins at operation (620), wherein at least one wafer is loaded onto x substrate support surfaces. In one or more embodiments, x is an integer in the range of 2 to 10. In one or more embodiments, x refers to the number of substrate support surfaces. In other embodiments, x refers to one or more of the number of substrate surfaces or the number of processing stations (110). In some embodiments, the number of substrate support surfaces and the number of wafers and/or processing stations are equal to and equal to x. In one or more embodiments, x is an integer in the range of 2 to 6. In one or more embodiments, x is selected from 2, 3, 4, 5, 6, 7, 8, 9, or 10. In other embodiments, x is selected from 2, 3, 4, 5, or 6. In one or more embodiments, x is 4.

In operation (630), the substrate support assembly is rotated (rx-1) times in a first direction such that each of the substrate support surfaces rotates (360/x) degrees relative to an adjacent processing station (110), where r is an integer greater than or equal to 1. The number r represents a number of process cycles (i.e., ALD cycles). As used herein, the term “(rx-1)” or “(rx'-1)” refers to the number of turns (i.e., rotations) of the substrate support assembly.

In some embodiments, there is more than one process cycle (r) during a complete rotation around the process chamber. For example, FIG. 22 illustrates a process according to method (600), wherein there are four (x = 4) process stations (110) having two (x' = 2) different types of process conditions (A and B). In such an embodiment, the substrate support assembly can be rotated an odd number of times in each direction to provide alternating exposures to both process conditions. In some embodiments, the number of rotations in each direction is equal to (rx'-1) rotations. In the embodiment illustrated in FIG. 7, r = 2 and x' = 2, and thus there are three rotations (117a, 117b, 117c) in the first direction.

In operation (640), at each processing station, at least one top surface of a wafer is exposed to process conditions to form a film. In one or more embodiments, the process conditions include one or more of temperature, pressure, reactive gases, and the like. In one or more embodiments, the formed film has a substantially uniform thickness. As used herein, the term "substantially uniform" refers to film thicknesses that are within ±5 nm, ±4 nm, ±3 nm, ±2 nm, or ±1 nm of the formed films.

In operation (650), the substrate support assembly is rotated (rx-1) or (rx'-1) times in the second direction such that each of the substrate support surfaces rotates (360/x) degrees relative to the adjacent processing station (110). As illustrated in FIG. 22, there are three rotations (118a, 118b, 118c) in the second direction.

At decision point (660), if the predetermined thickness of the film is formed on the substrate, the method is stopped. At decision point (660), if the predetermined thickness of the film is not obtained on the substrate, the process cycle (625) is repeated until the predetermined thickness is obtained.

FIG. 23 illustrates a flow diagram of a method (700) of depositing a film according to one or more embodiments of the present disclosure. FIG. 24 illustrates a processing chamber configuration according to one or more embodiments of the present disclosure. Referring to FIGS. 23 and 24 , the method (700) begins at operation (720), wherein at least one wafer is loaded onto x substrate support surfaces. In one or more embodiments, x is an integer in the range of 2 to 10. In one or more embodiments, x refers to the number of substrate support surfaces. In other embodiments, x refers to one or more of the number of substrate support surfaces or the number of processing stations (110). In some embodiments, the number of substrate support surfaces and the number of wafers and/or processing stations (110) are equal to and equal to x. In one or more embodiments, x is an integer in the range of 2 to 6. In one or more embodiments, x is selected from 2, 3, 4, 5, 6, 7, 8, 9, or 10. In other embodiments, x is selected from 2, 3, 4, 5, or 6. In one or more embodiments, x is 4.

In operation (730), the substrate support assembly is rotated rx times in the first direction such that each of the substrate support surfaces rotates relative to each adjacent processing station (110), where r is an integer greater than or equal to 1. As used herein, the term “(rx)” refers to the number of rotations (i.e., number of rotations) of the substrate support assembly. For example, in the embodiments illustrated in FIGS. 23 and 24, when there are four processing stations (i.e., x = 4), the substrate support rotates at least four times in the first direction and at least four times in the second direction.

In some embodiments, there is more than one process cycle in a complete rotation around the process chamber. For example, FIG. 24 illustrates a process according to method (700), wherein there are four (x = 4) process stations (110) having two (x' = 2) different types of process conditions (A and B). In such an embodiment, the substrate support assembly can be rotated in each direction to provide alternating exposures to both process conditions. In some embodiments, the number of rotations in each direction is equal to rx rotations. In the embodiment illustrated in FIG. 24, four rotations (117a, 117b, 117c, 117d) in the first direction result in two complete ALD cycles, after which the substrates are returned to the initial processing station (110).

In operation (740), at each processing station, at least one top surface of a wafer is exposed to process conditions to form a film. In one or more embodiments, the process conditions include one or more of temperature, pressure, reactive gases, and the like. In one or more embodiments, the formed film has a substantially uniform thickness. As used herein, the term "substantially uniform" refers to film thicknesses that are within ±5 nm, ±4 nm, ±3 nm, ±2 nm, or ±1 nm of the formed films.

In operation (750), the substrate support assembly is rotated (rx) times in the second direction so that each of the substrate support surfaces rotates (360/x) degrees relative to the adjacent processing station (110). As illustrated in FIG. 24, there are four rotations (118a, 118b, 118c, 118d) in the second direction.

At decision point (760), if the predetermined thickness of the film is formed on the substrate, the method is stopped. At decision point (760), if the predetermined thickness of the film is not obtained on the substrate, the cycle (725) is repeated until the predetermined thickness is obtained.

FIG. 25 depicts a flow diagram of a method (800) of depositing a film according to one or more embodiments of the present disclosure. FIG. 26 illustrates a processing chamber configuration according to one or more embodiments of the present disclosure. Referring to FIGS. 25 and 26 , the method (800) begins at operation (820), wherein at least one wafer is loaded onto x substrate support surfaces. In one or more embodiments, x is an integer in the range of 2 to 10. In one or more embodiments, x refers to the number of substrate support surfaces. In other embodiments, x refers to one or more of the number of substrate surfaces or the number of processing stations (110). In some embodiments, the number of substrate support surfaces and the number of wafers and/or processing stations are equal to and equal to x. In one or more embodiments, x is an integer in the range of 2 to 6. In one or more embodiments, x is selected from 2, 3, 4, 5, 6, 7, 8, 9, or 10. In other embodiments, x is selected from 2, 3, 4, 5, or 6. In one or more embodiments, x is 4.

In operation (830), the substrate support assembly is rotated (360/x) degrees in a first direction and subsequently rotated (360/x) degrees in a second direction such that each substrate support surface rotates relative to each adjacent processing station (120). The rotations in the first direction and the second direction can be repeated n times, where n is an integer greater than or equal to 1. The number n represents a number of process cycles (i.e., ALD cycles). In other words, each process is one process cycle of rotation in the first direction followed by processing and rotation in the second direction, whereby the substrate is exposed to the first reactive gas and the second reactive gas, respectively, at the first station and the second station.

FIG. 26 illustrates a process according to a method (800), wherein there are four (x = 4) process stations (120) having four (x' = 4) different types of process conditions (A, B, C, and D). In this embodiment, the substrate support assembly (100) is rotated in a first direction (117) such that a substrate positioned on a process station (120a) is rotated (117a) to a process station (120b), and then the substrate support assembly (100) is rotated in a second direction (118) such that the substrate (now positioned on the process station (120b)) is rotated (118a) back to the process station (120a). This rotation can be repeated n times, where n is an integer greater than or equal to 1. The number n represents a number of process cycles (i.e., ALD cycles).

In operation (840), at each processing station, the top surface of at least one wafer is exposed to process conditions to form a film. In one or more embodiments, the process conditions include one or more of temperature, pressure, reactive gases, and the like. In one or more embodiments, the formed film has a substantially uniform thickness. As used herein, the term "substantially uniform" refers to film thicknesses that are within ±5 nm, ±4 nm, ±3 nm, ±2 nm, or ±1 nm of the formed films.

In operation (850), the substrate support assembly is then rotated (360/x) degrees in the first direction (117) followed by another (360/x) degrees in the first direction (117). Referring to FIG. 26, a substrate on process station (120a) is rotated (117a) to process station (120b) and then rotated (117b) to process station (120c). In some embodiments of operation (850), the substrate support is rotated a sufficient number of times to move the substrates to the second set of processing stations. For example, the substrate support is rotated twice to move a substrate initially at station A to station C.

In some embodiments (not illustrated), when the substrate support is rotated from station A to station B, the top surface of at least one wafer is exposed to process conditions for forming a film. In one or more embodiments, the process conditions include one or more of temperature, pressure, reactive gases, and the like. In one or more embodiments, the formed film has a substantially uniform thickness. As used herein, the term "substantially uniform" refers to film thicknesses that are within ±5 nm, ±4 nm, ±3 nm, ±2 nm, or ±1 nm of the formed films.

In some embodiments (not illustrated), when the substrate support is subsequently rotated from station B to station C, the top surface of at least one wafer is exposed to process conditions for forming a film. In one or more embodiments, the process conditions include one or more of temperature, pressure, reactive gases, and the like. In one or more embodiments, the formed film has a substantially uniform thickness. As used herein, the term "substantially uniform" refers to film thicknesses that are within ±5 nm, ±4 nm, ±3 nm, ±2 nm, or ±1 nm of the formed films.

In operation (860), the substrate support assembly (100) is rotated (360/x) degrees in a first direction (117) and subsequently rotated (360/x) degrees in a second direction (118) such that each of the substrate support surfaces rotates relative to each adjacent processing station (120). This rotation can be repeated m times, where m is an integer greater than or equal to 1. The number m represents the number of process cycles (i.e., ALD cycles).

Referring to FIG. 26, the substrate support assembly (100) is rotated in a first direction (117) such that the substrate now positioned on the process station (120c) rotates (117c) toward the process station (120d), and then the substrate support assembly (100) is rotated in a second direction (118) such that the substrate (now positioned on the process station (120d)) rotates (118b) back toward the process station (120c). This rotation can be repeated m times, where m is an integer greater than or equal to 1. The number m represents the number of process cycles (i.e., ALD cycles).

In operation (870), at each processing station, at least one top surface of a wafer is exposed to process conditions to form a film. In one or more embodiments, the process conditions include one or more of temperature, pressure, reactive gases, and the like. In one or more embodiments, the formed film has a substantially uniform thickness. As used herein, the term "substantially uniform" refers to film thicknesses that are within ±5 nm, ±4 nm, ±3 nm, ±2 nm, or ±1 nm of the formed films.

In operation (880), the substrate support assembly is then rotated (360/x) degrees in the second direction (118). Referring to FIG. 26, the substrate on the process station (120c) is rotated (118c) to the process station (120b).

At decision point (890), if the predetermined thickness of the film is formed on the substrate, the method is stopped. At decision point (890), if the predetermined thickness of the film is not obtained on the substrate, the cycle (825) is repeated until the predetermined thickness is obtained.

In one or more embodiments, at least one wafer is stationary when the film is formed.

In one or more embodiments of the method, the substrate support surfaces include heaters. In one or more embodiments, the substrate support surfaces or the heaters include electrostatic chucks.

Reference throughout this specification to “one embodiment,” “certain embodiments,” “one or more embodiments,” or “an embodiment” means that a particular feature, structure, material, or characteristic described in connection with the embodiment is included in at least one embodiment of the disclosure. Thus, the appearances of the phrases “in one or more embodiments,” “in certain embodiments,” “in one embodiment,” or “in an embodiment” in various places throughout this specification are not necessarily all referring to the same embodiment of the disclosure. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.

Although the disclosure herein has been described with reference to specific embodiments, it should be understood that these embodiments are merely illustrative of the principles and applications of the present disclosure. It will be apparent to those skilled in the art that various modifications and variations can be made to the methods and apparatus of the present disclosure without departing from the spirit and scope of the present disclosure. Accordingly, it is intended that the present disclosure cover such modifications and variations as come within the scope of the appended claims and their equivalents.

Claims (14)

As a method,
Providing a processing chamber comprising x spatially separated isolated processing stations, wherein the processing chamber has a processing chamber temperature, each processing station independently having a processing station temperature, the processing chamber temperature being different from the processing station temperatures;
A step of rotating a substrate support assembly having a plurality of substrate support surfaces and a support plate aligned with the x spatially separated isolated processing stations, each substrate support surface rotating rx times in a first direction (360/x) degrees relative to an adjacent substrate support surface, wherein r is an integer greater than or equal to 1, the plurality of substrate support surfaces are substantially coplanar, and each of the plurality of substrate support surfaces includes a respective heater; and
A method comprising the step of rotating the substrate support assembly rx degrees such that each substrate support surface rotates (360/x) degrees in a second direction relative to an adjacent substrate support surface. In the first paragraph,
A method where x is an integer in the range of 2 to 10. In the first paragraph,
method, where r is in the range of 1 to 10. In the first paragraph,
A method wherein the substrate support assembly comprises at least two support arms connected to a central base and extending from the central base, each support arm having an inner end and an outer end, and wherein the heaters are positioned directly on the outer ends of the at least two support arms. In the first paragraph,
A method further comprising the step of controlling one or more of the processing chamber temperature or the processing station temperatures. In the first paragraph,
A method further comprising the step of controlling the rotational speed of the substrate support assembly. As a method,
Providing a processing chamber comprising x spatially separated isolated processing stations, wherein the processing chamber has a processing chamber temperature, each processing station independently having a processing station temperature, the processing chamber temperature being different from the processing station temperatures;
A step of rotating a substrate support assembly having a plurality of substrate support surfaces and a support plate aligned with the x spatially separated isolated processing stations in a first direction (360/x) degrees relative to an adjacent substrate support surface, wherein the plurality of substrate support surfaces are substantially coplanar, and each of the plurality of substrate support surfaces includes a respective heater;
A step of rotating the substrate support assembly in a second direction (360/x) degrees relative to an adjacent substrate support surface, wherein the rotations in the first direction and the rotations in the second direction are repeated n times, where n is an integer greater than or equal to 1;
A step of rotating the above substrate support assembly twice (360/x) degrees in the first direction;
A step of rotating the substrate support assembly by (360/x) degrees in the first direction and then rotating the substrate support assembly by (360/x) degrees in the second direction, wherein the rotations in the first direction and the second direction are repeated m times, wherein m is an integer greater than or equal to 1; and
A method comprising the step of rotating the substrate support assembly (360/x) degrees in the second direction. In Article 7,
A method where x is an integer in the range of 2 to 10. In Article 7,
A method wherein the substrate support assembly comprises at least two support arms connected to a central base and extending from the central base, each support arm having an inner end and an outer end, and wherein the heaters are positioned directly on the outer ends of the at least two support arms. In Article 7,
A method further comprising the step of controlling one or more of the processing chamber temperature or the processing station temperatures. In Article 7,
A method further comprising the step of controlling the rotational speed of the substrate support assembly. As a method of forming a barrier,
A step of loading at least one wafer on x number of substrate support surfaces of a substrate support assembly having a support plate, wherein each of the substrate support surfaces is aligned with x number of spatially separated isolated processing stations, the plurality of substrate support surfaces being substantially coplanar, and each of the substrate support surfaces including a respective heater;
The step of rotating the substrate support assembly rx times, wherein each substrate support surface is rotated (360/x) degrees in a first direction relative to an adjacent substrate support surface, wherein r is an integer greater than or equal to 1;
The step of rotating the substrate support assembly rx times so that each substrate support surface rotates (360/x) degrees in the second direction relative to the adjacent substrate support surface; and
At each processing station, the step of exposing the uppermost surface of at least one wafer to process conditions to form a film having a substantially uniform thickness,
A method of forming a film, wherein all portions of at least one wafer on said x number of substrate support surfaces are simultaneously aligned with said x number of spatially separated isolated processing stations. In Article 12,
A method for forming a film, wherein at least one of the wafers is stationary when the film is formed. In Article 12,
A method of forming a film, wherein x is an integer in the range of 2 to 10, and r is in the range of 1 to 10.

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