KR102660655B1 - Mask-support assembly and producing method thereof - Google Patents

Abstract

The present invention relates to a connection between a mask and a support portion and a method of manufacturing the same. A method of manufacturing a connection between a mask and a support according to the present invention is a method of manufacturing a connection between a mask and a support used in a process of forming an OLED pixel on a semiconductor wafer, comprising the steps of: (a) preparing a conductive substrate; (b) forming a mask including a mask pattern on the first side of the conductive substrate; (c) reducing the thickness of the conductive substrate on a second side opposite the first side of the conductive substrate; (d) etching the conductive substrate on the second side of the conductive substrate to form a support portion including the edge portion and the grid portion.

Description

Connector of mask and support part and method of manufacturing the same {MASK-SUPPORT ASSEMBLY AND PRODUCING METHOD THEREOF}

The present invention relates to a connection between a mask and a support portion and a method of manufacturing the same. More specifically, it relates to a connecting body of a mask and a support part that can be used when forming pixels on a semiconductor wafer and to precisely form a mask pattern with ultra-high resolution, and a method of manufacturing the same.

As a technology to form pixels in the OLED manufacturing process, the FMM (Fine Metal Mask) method is mainly used, which deposits organic materials at a desired location by attaching a thin metal mask (shadow mask) to the substrate.

In the existing OLED manufacturing process, after manufacturing the mask thin film, the mask is welded and fixed to the OLED pixel deposition frame, but there was a problem in that the large-area mask was not aligned well during the fixing process. Additionally, during the process of welding and fixing the mask to the frame, there was a problem in that the mask was sagging or distorted due to load because the mask film was too thin and had a large area.

In the ultra-high-definition OLED manufacturing process, even minute alignment errors of 1 ㎛ or less can lead to failure of pixel deposition, so it is necessary to develop technologies that can prevent deformation such as sagging or twisting of the mask and make alignment clear. This is the situation.

Meanwhile, micro displays applied to virtual reality (VR) devices have recently been attracting attention. In order to display an image right in front of the user's eyes in a VR device, a micro display must have a smaller screen size than existing displays while delivering high definition within a small screen. Therefore, a mask pattern that is smaller than the mask used in the existing ultra-high definition OLED manufacturing process and more fine alignment of the mask before the pixel deposition process are required.

Therefore, the present invention was conceived to solve all the problems of the prior art as described above, and provides a connection between a mask and a support part that can implement ultra-high definition pixels of a micro display, and a method of manufacturing the same. The purpose.

Additionally, the purpose of the present invention is to provide a connection between a mask and a support portion and a manufacturing method thereof that can improve the stability of pixel deposition by clearly aligning the mask.

In addition, the purpose of the present invention is to provide a connection between a mask and a support part and a method of manufacturing the same, which ensures a uniform stress level in all parts of the mask.

In addition, the purpose of the present invention is to provide a connection between a mask and a support portion and a method of manufacturing the same, which allows the mask and frame to be in close contact with the target substrate without being sagging by load during the OLED pixel formation process.

However, these tasks are illustrative and do not limit the scope of the present invention.

The above object of the present invention is a method of manufacturing a connection between a mask and a support part used in a process of forming an OLED pixel on a semiconductor wafer, comprising the steps of: (a) preparing a conductive substrate; (b) forming a mask including a mask pattern on the first side of the conductive substrate; (c) reducing the thickness of the conductive substrate on a second side opposite the first side of the conductive substrate; (d) etching the conductive substrate on the second surface of the conductive substrate to form a support portion including the edge portion and the grid portion.

The conductive substrate may be a silicon wafer.

In step (b), the mask made of Invar or Super Invar may be formed on the conductive substrate by electroforming.

Between steps (b) and (c), a template may be attached to the mask.

The template and the mask may be bonded to each other via a temporary adhesive part.

The template is made of any one of wafer, glass, silica, quartz, alumina (Al ₂ O ₃ ), borosilicate glass, and zirconia, and the temporary adhesive part is It may be a liquid wax, adhesive, or adhesive sheet that can be separated by any one of heat application, chemical treatment, UV application, and ultrasonic application.

In step (c), the thickness of the conductive substrate can be reduced to 50㎛ to 200㎛.

Between steps (c) and (d), (c2) on a second side opposite to the first side of the conductive substrate, Cu, Au, Ag, Al, Sn, In, Bi, Zn, It may further include forming an adhesive portion including at least one of Sb, Ge, and Cd, and in step (d), the conductive substrate and the adhesive portion may be etched.

After step (d), (d2) Cu, Au, Ag, Al, Sn, In, Bi, Zn on the second side opposite to the first side of the support including the edge portion and the grid portion. , forming an adhesive portion containing at least one of Sb, Ge, and Cd materials.

Between step (b) and step (c), between step (c) and step (d), or after step (d), the mask and the support are heat treated to form Fe between the mask and the support. It may further include forming a connection portion including at least one material selected from , Ni, and Si.

The heat treatment can be performed at 300°C to 800°C.

In step (b), slit lines may be formed between each cell portion of the mask to space the cell portions apart.

In step (b), the mask may be formed on the upper and side surfaces of the support portion using the electroplating method.

The grid portion includes a plurality of first grid portions extending in a first direction and having both ends connected to the edge portion; It may include a plurality of second grid parts extending in a second direction perpendicular to the first direction and intersecting the first grid part, and having both ends connected to the edge part.

In addition, the above object of the present invention is a connecting body of a mask and a support part used in a process of forming an OLED pixel on a semiconductor wafer, including a support part including an edge and a grid part; A mask connected to the first surface of the support part and including a mask pattern, wherein the grid part includes a plurality of first grid parts extending in a first direction and having both ends connected to the edge part. a plurality of second grid parts extending in a second direction perpendicular to the first direction to intersect the first grid part, and having both ends connected to the edge part; wherein the support part has a thickness of 50㎛ to 50㎛. It may be 200㎛.

The support part may include a single crystal silicon material, and the mask may include an Invar or Super Invar material.

On the second side opposite to the first side of the support, an adhesive portion containing at least one of Cu, Au, Ag, Al, Sn, In, Bi, Zn, Sb, Ge, and Cd will be formed. You can.

A connection portion containing at least one material selected from Fe, Ni, and Si may be formed between the mask and the support portion.

The template may be attached to the mask via a temporary adhesive part.

According to the present invention configured as described above, it is possible to implement ultra-high definition pixels of a micro display.

Additionally, according to the present invention, the stability of pixel deposition can be improved by clearly aligning the mask.

Additionally, according to the present invention, there is an effect of having a uniform stress level in all parts of the mask.

In addition, according to the present invention, the mask and frame can be brought into close contact with the target substrate without sagging due to load during the OLED pixel formation process.

Of course, the scope of the present invention is not limited by this effect.

1 is a schematic diagram showing a connection between a mask and a frame according to an embodiment of the present invention.
Figure 2 is a schematic side cross-sectional view taken along line AA' of Figure 1.
Figure 3 is a schematic plan view and a schematic side cross-sectional view E-E'/FF' showing a mask according to an embodiment of the present invention.
Figure 4 is a schematic plan view showing a support portion according to an embodiment of the present invention.
Figure 5 is a schematic plan view and a schematic side cross-sectional view GG' showing a mask according to another embodiment of the present invention.
Figure 6 is a schematic side cross-sectional view showing a connection between a mask and a frame according to another embodiment of the present invention.
7 to 14 are schematic diagrams showing the manufacturing process of the connection between the mask and the support portion according to an embodiment of the present invention.
Figures 15 and 16 are schematic diagrams showing the manufacturing process of a connection body between a mask and a frame according to an embodiment of the present invention.
Figures 17 to 19 are schematic diagrams specifically showing the process of connecting the support part and the close support part in the manufacturing process of the connection body between the mask and the frame according to an embodiment of the present invention.
Figures 20 to 25 are schematic diagrams showing the process of manufacturing a close contact support portion according to an embodiment of the present invention.
Figure 26 is a schematic diagram showing an OLED pixel deposition device using a connection body of a mask and a support portion according to an embodiment of the present invention.

The detailed description of the present invention described below refers to the accompanying drawings, which show by way of example specific embodiments in which the present invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different from one another but are not necessarily mutually exclusive. For example, specific shapes, structures and characteristics described herein with respect to one embodiment may be implemented in other embodiments without departing from the spirit and scope of the invention. Additionally, it should be understood that the location or arrangement of individual components within each disclosed embodiment may be changed without departing from the spirit and scope of the invention. Accordingly, the detailed description that follows is not intended to be taken in a limiting sense, and the scope of the invention is limited only by the appended claims, together with all equivalents to what those claims assert, if properly described. Similar reference numbers in the drawings refer to identical or similar functions across various aspects, and the length, area, thickness, etc. may be exaggerated for convenience.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings in order to enable those skilled in the art to easily practice the present invention.

Figure 1 is a schematic diagram showing a connection body (10: 10-1) of a mask and a frame according to an embodiment of the present invention. Figure 2 is a schematic side cross-sectional view taken along line A-A' of Figure 1. Figure 3 is a schematic plan view and a schematic side cross-sectional view E-E'/F-F' showing the mask 20 according to an embodiment of the present invention. Figure 4 is a schematic plan view showing the support part 30 according to an embodiment of the present invention.

Recently, micro displays applied to VR (virtual reality) devices can perform a pixel deposition process on a target substrate 900 (see FIG. 26) such as a semiconductor wafer or silicon wafer, rather than a large-area substrate. You can. Since the screen of a micro display is located directly in front of the user's eyes, it has a small screen of about 1 to 2 inches rather than a large screen. In addition, since it is located close to the user's eyes, the resolution needs to be implemented even higher.

Therefore, rather than using the present invention in the pixel formation process for a large-area target substrate with a side length exceeding 1,000 mm, the pixel formation process is performed on a 200 mm, 300 mm, and 450 mm class semiconductor wafer target substrate 900, but the second The purpose is to provide a connecting body 10 of a mask and a frame capable of forming pixels with high image quality, and a method of manufacturing the same.

For example, in the case of current QHD quality, the pixel size is 500 to 600 PPI (pixel per inch), which is about 30 to 50㎛, and in the case of 4K UHD and 8K UHD high definition, it is higher than this, ~860 PPI, ~1600 PPI. It has a resolution of, etc. Microdisplays applied directly to VR devices, or used by inserting them into VR devices, aim for ultra-high definition of about 2,000 PPI or higher, and the pixel size is about 5 to 10㎛. In the case of semiconductor wafers and silicon wafers, they can be used as substrates for high-resolution micro displays because they can be processed more finely and precisely than glass substrates using technologies developed in semiconductor processing. The present invention is characterized by a connection body 10 of a mask and a frame capable of forming pixels on such a semiconductor wafer.

Referring to FIGS. 1 and 2, in the present invention, in order to perform a pixel deposition process using a semiconductor wafer as the target substrate 900 (see FIG. 26), the mask 20 corresponds to the semiconductor wafer (or silicon wafer). It is characterized by having a shape that That the shape of the mask 20 corresponds to the semiconductor wafer means that the mask 20 has the same size and shape as the semiconductor wafer, or is different in size and shape from the semiconductor wafer, but is at least coaxial and the mask pattern P is It should be noted that this includes the state of being placed within the shape of a semiconductor wafer. In addition, the mask 20, which has a shape corresponding to a semiconductor wafer, is connected to a support portion 30 that serves as a frame to clearly align the mask.

The connection body 10:10-1 of the mask and the frame may be provided by connecting the connection body 100 and the close support portion 200 of the mask 20 and the support portion 30 [see FIG. 15]. The connecting body 100 of the mask and the support part may include the mask 20 and the support part 30. The close support portion 200 may include a close contact sheet portion 60 and a close contact frame 70. The adhesive sheet portion 60 may be connected to the adhesive frame 70, the support portion 30 may be connected to one side of the adhesive sheet portion 60, and the mask 20 may be connected to one surface of the support portion 30. there is. The support portion 30 and the close support portion 200 may serve as a frame that supports the mask 20. Accordingly, in this specification, the close support part 200 is connected to the connection body 100 of the mask 20 and the support part 30, and the mask 20 is connected to the support part 30 and the close support part ( The configuration supported by 200 is proposed as a connection body 10 of the mask 20 and the frames 30 and 200.

Referring to FIGS. 1 to 3 , the mask 20 may include a cell portion (C), a partition portion (SR), and a dummy portion (DM). The part of the mask 20 that is not in contact with the support part 30 and on which the mask pattern P is formed is attached to the cell part C, and the part disposed between the cell parts C is attached to the partition part SR and the support part 30. The part is indicated as a dummy part (DM). The cell part (C), partition part (SR), and circular dummy part (DM) are given different names and symbols depending on where they are formed, but the cell part (C), partition part (SR), and dummy part (DM) are separate areas. This is not a structure that is made of the same material and connected as one piece. In other words, the cell portion C, the partition portion SR, and the circular dummy portion DM are each part of the mask 20 formed simultaneously in an electroforming process. In the following description, the cell portion (C), partition portion (SR), and dummy portion (DM) may be used interchangeably with the mask 20.

The mask 20 preferably includes invar or super invar material. Alternatively, the mask 20 can be electroplated with nickel (Ni), cobalt (Co), titanium (Ti), chromium (Cr), tungsten (W), molybdenum (Mo), and the silicon component of the support portion 30. It may also contain a metal material that can form silicide. Alternatively, the mask 20 may include a super invar material containing ternary or higher Co. The mask 20 may have a circular shape to correspond to a circular semiconductor wafer. The mask 20 may have a size corresponding to or larger than that of a semiconductor wafer, such as 200 mm, 300 mm, or 450 mm.

Conventional masks have shapes such as squares and polygons to correspond to large-area substrates. In addition, the frame also has a shape such as a square or polygon to correspond to this mask, and since the mask includes angled corners, a problem may occur where stress is concentrated at the corners. When stress is concentrated, different forces act on only part of the mask, which can cause the mask to become warped or distorted, which can lead to failure in pixel alignment. In particular, in ultra-high definition over 2,000 PPI, it is important to avoid stress concentrating on the corners of the mask.

Accordingly, the mask 20 of the present invention has a circular shape and is characterized by not including corners. That is, the dummy portion DM of the mask 20 may have a circular shape and may not include corners. Since there are no corners, the problem of different forces acting on specific parts of the mask 20 can be solved, and stress can be uniformly distributed along the circular edge. Accordingly, the mask 20 is not distorted or distorted, contributing to clear pixel alignment, and has the advantage of being able to implement a mask pattern (P) of 2,000 PPI or more. The edge of the mask 20 may be inside the edge of the support part 30, the edges of the mask 20 and the support part 30 may coincide, or the mask 20 may be formed to surround the side edge of the support part 30. there is. The present invention performs a pixel deposition process by matching a circular semiconductor wafer (or silicon wafer) with a low thermal expansion coefficient and a circular mask 20 in which stress is uniformly distributed along the edge, so that the pixel deposition process is approximately 5 to 10 μm. It becomes possible to deposit pixels up to this level.

A plurality of mask patterns P may be formed in the cell portion C. The mask pattern (P) is a plurality of pixel patterns (P) corresponding to R, G, and B. The mask patterns P may have inclined sides, a tapered shape, or a shape in which the pattern width increases from the top to the bottom. Numerous mask patterns (P) can be grouped to form one display cell portion (C). The display cell portion C has a diagonal length of approximately 1 to 2 inches and is an area corresponding to one display. Alternatively, the display cell portion C may be an area corresponding to a plurality of displays.

The mask pattern P may have a substantially tapered shape, and the pattern width may be several to dozens of ㎛, preferably about 5 to 10 ㎛ (resolution of 2,000 PPI or more).

The mask 20 may include a plurality of cell portions C. The plurality of cell units C may be arranged at predetermined intervals from each other in a first direction (x-axis direction) and a second direction perpendicular to the first direction (y-axis direction). In Figure 1, 21 cell units C are shown arranged along the first and second directions, but the present invention is not limited thereto. A partition portion (SR) may be disposed between the cell portions (C). The cell portion C and the partition portion SR are portions of the mask 20 disposed at a center of the mask 20, rather than the dummy portion DM.

Referring to FIGS. 1, 2, and 4, the support portion 30 may include an edge portion 31, a plurality of first grid portions 33, and a plurality of second grid portions 35. Although the border portion 31 and the first and second grid portions 33 and 35 have different names and symbols, the border portion 31 and the first and second grid portions 33 and 35 are not separate areas. It is made of the same material and is connected as one piece. In the following description, the edge portion 31 and the first and second grid portions 33 and 35 may be used interchangeably with the support portion 30.

The support part 30 is preferably made of silicon, and more preferably, the support part 30 is formed from a silicon wafer and may be made of a single crystal silicon material. The support portion 30 may have an edge portion 31 of a circular shape to correspond to the circular semiconductor wafer that is the target substrate 900 (see FIG. 26). To enable the mask 20 to be connected to the upper portion, the support portion 30 may have the same shape as the mask 20 or at least a larger shape.

The edge portion 31 may define the outer shape of the support portion 30 with an edge corresponding to the shape of the mask 20 . The edge portion 31 may have a circular shape.

The plurality of first grid portions 33 may extend in the first direction and both ends may be connected to the edge portion 31 . Additionally, the plurality of second grid parts 35 may extend in a second direction perpendicular to the first direction, intersect the first grid part 33, and have both ends connected to the edge part 31. The first grid parts 33 are arranged in parallel with each other at intervals, and the second grid parts 35 are arranged in parallel with each other at intervals. Additionally, since the first and second grid portions 33 and 35 intersect each other, empty spaces CR may appear in the form of a matrix at the intersected portions. This empty space (CR) is a space where the cell portion (C) of the mask 20 is placed and is referred to as a cell region (CR) (see FIG. 4).

The thickness of the support portion 30 may be thicker than the thickness of the mask 20 . In order to implement a resolution of the mask pattern P higher than 2,000 pixels per inch (PPI), the thickness of the mask 20 may be about 2㎛ to 12㎛. If the thickness of the mask 20 is thicker than this, it may be difficult to form the width of the mask patterns P, which have an overall tapered shape, or the spacing between the mask patterns P to meet the above resolution. The support part 30 has the rigidity to support the mask 20 and can be formed to have a thickness of about 50㎛ to 200㎛ so that it can be stretched on a cell unit C basis (see FIGS. 17 to 19).

Meanwhile, the cell portion C of the mask 20 has a rectangular shape, and when only the cell portion C is formed on the mask 20, stress occurs in each region of the cell portion C and the dummy portion DM, which has a circular edge. Problems with uneven levels may occur. In addition, when only the shell portion C is formed, there is no separate opening in the dummy portion DM, so the dummy portion DM experiences less deformation in response to stress, and the shell portion C undergoes significant deformation even in response to the same stress. It has no choice but to appear. The connection body 10 of the mask and the frame must have a clear border of the cell portion C and its position must not change so that an ultra-high-definition OLED pixel can be configured. Therefore, it is necessary to uniformly adjust the stress levels acting on the cell portion C and the dummy portion DM. This can be equally applied to the cell area CR and the dummy cell area DCR of the support part 30.

Referring again to FIGS. 1 to 3, a plurality of dummy cell portions DC may be formed in the mask 20 of the present invention. The dummy cell unit DC may be arranged at predetermined intervals in the first direction (x-axis direction) of the cell unit C and in the second direction (y-axis direction) perpendicular to the first direction. A predetermined interval between the dummy cell unit DC and the cell unit C may correspond to a predetermined gap between the cell units C and the cell unit C. A partition unit (SR) may also be placed between the dummy cell unit DC and the cell unit C.

The length of at least one side (DC1, DC2) of the dummy cell portion (DC) may correspond to the length of one side (C1, C2) of the cell portion (C). The cell portion C is provided in a rectangular shape, and the edge sides C1 and C2 of the cell portion C may be composed of mutually perpendicular straight lines. The dummy cell portion DC is arranged along the first and second directions along the extension of the cell portion C, but is difficult to be provided in a square shape due to the nature of being disposed at the edge of the mask 20. The dummy cell portion DC may have a shape in which at least some of the sides DC3 have a curvature. From another perspective, two to four sides of the edge of the dummy cell portion DC may be provided as straight lines, and some sides may be provided as curves. For example, in FIG. 3, the dummy cell portion located on the upper left side has two sides (DC1, DC2) provided as straight lines with the same length as the border edges (C1, C2) of the cell portion (C), and the remaining side (DC3) is provided as a straight line of the cell portion (C). It is provided as two straight lines and one curve shorter than the edge of (C). For another example, the dummy cell unit (DC) located on the far right/left and the dummy cell unit (DC) located on the upper/bottom are roughly in a 'ㄷ' shape, with three sides being straight and one side being curved. provided.

Additionally, a plurality of dummy patterns DP may be formed in the dummy cell portion DC. As shown in FIGS. 2 and 3 , the dummy pattern DP may be formed to have the same shape as the mask pattern P. For example, the sides may have an inclined shape, a tapered shape, or a shape in which the pattern width becomes wider from the top to the bottom. A plurality of dummy patterns (DP) may be grouped to form one dummy cell unit (DC). The dummy pattern DP may have a substantially tapered shape, and the pattern width may be several to dozens of micrometers, preferably about 5 to 10 micrometers (resolution of 2,000 PPI or more).

Meanwhile, the dummy pattern DP may be formed to a predetermined depth even if it does not penetrate the mask 20 in the thickness direction, as long as it is within the intended range of maintaining stress uniformity in the entire area of the mask 20. In addition, the dummy pattern DP does not necessarily have the same shape and size as the mask pattern P, but is larger and larger than the mask pattern P, as long as it is within the range of the purpose of maintaining stress uniformity in the entire area of the mask 20. , it may have a shape other than a tapered shape. However, the uniformity of the stress level can increase as the mask pattern P has the same shape.

Referring to FIG. 4, a plurality of dummy cell regions (DCR) may be formed in the support portion 30. The dummy cell region DCR may be arranged at predetermined intervals in the first direction (x-axis direction) of the cell region CR and in the second direction (y-axis direction) perpendicular to the first direction. A predetermined gap between the dummy cell area DCR and the cell area CR may correspond to a predetermined gap between the cell area CR and the cell area CR. The first and second grid units 33 and 35 may also be disposed between the dummy cell area DCR and the cell area CR. Since the dummy cell region DCR has the same function as the dummy cell portion DC described above, it is replaced with the description of the dummy cell portion DC described above.

Meanwhile, a connection portion 40 may be interposed between the mask 20 and the support portion 30. The mask 20 may be connected to the support part 30 via the connection part 40. The edge portion 31 of the support portion 30 is connected to the dummy portion DM of the mask 20, and the first and second grid portions 33 and 35 of the support portion 30 are connected to the partition portion (DM) of the mask 20. SR) can be connected. That is, the partition portion SR may be supported on the first and second grid portions 33 and 35.

The connection part 40 may be formed through heat treatment (H) (see FIG. 9) in the state of a laminate in which the mask 20 is formed on the support part 30. The connection portion 40 may be provided as an intermetallic compound that combines the components of the mask 20 and the components of the support portion 30. As the Fe and Ni components of the mask 20 and the Si components of the support portion 30 are combined, the connection portion 40 includes Ni and Si, Fe, Ni and Si, or Fe and Ni. It may be provided as a silicide containing. The mask 20 and the support part 30 may be attached to each other via the connection part 40 by the bonding force of the intermetallic compound.

Referring to FIGS. 1 and 2 , the close support portion 200 may include a close contact sheet portion 60 and a close contact frame 70 .

The close contact sheet portion 60 may include an edge sheet portion 61, a plurality of first grid sheet portions 63, and a plurality of second grid sheet portions 65. The border sheet portion 61 and the first and second grid sheet portions 63 and 65 have different names and symbols, but the border sheet portion 61 and the first and second grid sheet portions 63 and 65 are separated. It is not an area, but a composition made of the same material and connected as one. In the following description, the border sheet portion 61 and the first and second grid sheet portions 63 and 65 may be used interchangeably with the close contact sheet portion 60.

The contact sheet portion 60 preferably includes a magnetic material. On the other hand, the support part 30 is a silicon wafer and may not include a magnetic material. As an example, the close contact sheet portion 60 may include any one of Fe and Ni. Additionally, as an example, the close contact sheet portion 60 may be made of invar or super invar material. As the adhesive sheet portion 60 includes a magnetic material, the adhesive sheet portion 60 is pulled toward the target substrate 1900 by applying a magnetic field of the magnet 1310 in FIG. 26, which will be described later, and the adhesive sheet portion ( The mask 20 and the support portion 30 on the upper part of 60 can also be in close contact with the target substrate 1900. Accordingly, it is possible to prevent the mask 20 and the support portion 30 from being twisted or sagging due to load or tension.

The close contact sheet portion 60 may have a shape corresponding to the support portion 30. The close contact sheet portion 60 may have the same shape as the support portion 30 shown in FIG. 3 . Alternatively, as shown in FIGS. 1 and 2, the upper surface of the close sheet portion 60 supports the support portion 30 as a whole and the lower surface (border sheet portion 61) is connected to the close contact frame 70, It may have a shape with a larger diameter than the support portion 30. However, the adhesive sheet portion 60 is connected to the lower part of the support portion 30, and can transmit the adhesive force to the upper mask 20 and the support portion 30 by applying a magnetic field of the magnet 1310 (see Figure 26). As long as it is a shape, it does not necessarily have to be the same. Even in this case, the cell portion C of the mask 20 and the cell region CR of the support portion 30 must be open and not obscured by the contact sheet portion 60.

The edge sheet portion 61 may have a circular ring shape corresponding to the edge portion 31 of the support portion 30.

The plurality of first grid sheet parts 63 may extend in the first direction and be connected to the edge sheet part 61 at both ends. Additionally, the plurality of second grid sheet portions 65 may extend in a second direction perpendicular to the first direction, intersect the first grid sheet portion 63, and be connected to the edge sheet portion 61 at both ends. The first grid sheet portions 63 are arranged in parallel with each other at intervals, and the second grid sheet portions 65 are arranged in parallel with each other at intervals.

Since the first and second grid sheet portions 63 and 65 intersect each other, an empty space appears in the form of a matrix at the intersected portions, which may communicate with the cell region CR of the support portion 30. An empty space also appears between the edge sheet portion 61 and the first and second grid sheet portions 63 and 65, and this may be in communication with the dummy cell region DCR of the support portion 30.

The close contact frame 70 may be connected to the lower part of the close contact sheet portion 60. The close contact frame 70 and the close contact sheet portion 60 may be connected to each other via a weld bead WB created through welding. The lower surface of the edge sheet portion 61 and the upper surface of the close contact frame 70 may be connected. The close contact sheet portion 60 and the close contact frame 70 may be bonded to each other using an adhesive rather than welding or a metal of the same material as the adhesive portion 50, which will be described later.

The close contact frame 70 may be provided in a ring shape with a hollow area. The close contact frame 70 may have a shape corresponding to the close contact sheet portion 60. The close contact frame 70 may have the same edge shape as the close contact sheet portion 60. Alternatively, as shown in FIGS. 1 and 2, the close contact frame 70 has a larger diameter than the close contact sheet portion 60 so that the upper surface can support the edge seat portion 61 of the close contact seat portion 60 as a whole. It can have a shape. However, the adhesion frame 70 is connected to the lower part of the adhesion sheet part 60, and the adhesion force can be transmitted to the upper mask 20 and the support part 30 by applying a magnetic field of the magnet 1310 (see FIG. 26). If there is a shape, it does not necessarily have to be a corresponding shape. Even in this case, the cell portion C of the mask 20 and the cell region CR of the support portion 30 must be open and not obscured by the close contact frame 70 .

The close support part 200 must sufficiently transmit an adhesive force to the upper part by applying the magnetic field of the magnet 1310, and at the same time, it is necessary to well support the mask 20 and the support part 30 to prevent deformation. Accordingly, the thickness of the close support part 200 is preferably thicker than the thickness of the support part 30 so that the close support part 200 generates a large magnetic force and has strong rigidity. For example, the thickness of the support part 30 may be about 50㎛ to 200㎛, and the thickness of the close support part 200 may be thicker than the thickness of the support part 30 on a scale of several millimeters.

If the thickness of the close contact support part 200 is too thin, the rigidity may be weak and it may not be able to generate much magnetic force. Conversely, if the thickness of the close contact support part 200 is too thick, such as greater than 5 mm, the manufacturing cost will be high and processing may not be easy. There is a problem. Additionally, the thickness of the first and second grid sheet parts 63 and 65 in the close support portion 200 may be thinner than the thickness of the close contact frame 70. Since the first and second grid sheet portions 63 and 65 must have a cell region CR through which the organic material 1600 passes, it is preferable that the first and second grid sheet portions 63 and 65 have a thin thickness to prevent a shadow effect. Considering this, for example, the thickness of the close contact sheet portion 60 of the close support portion 200 may be about 100 μm, and the thickness of the close contact frame 70 may be about 1 mm to 5 mm.

Meanwhile, an adhesive portion 50 may be interposed between the support portion 30 and the close support portion 200. The support part 30 and the close contact support part 200 may be connected to each other via the adhesive part 50. The adhesive portion 50 may include at least one metal. As an example, the adhesive portion 50 may be made of at least one material selected from Cu, Au, Ag, Al, Sn, In, Bi, Zn, Sb, Ge, and Cd. Specific details of the adhesive portion 50 will be described later.

Figure 5 is (a) a schematic plan view and (b) a schematic side cross-sectional view G-G' showing a mask according to another embodiment of the present invention. Figure 6 is a schematic side cross-sectional view showing a connection body (10: 10-2) of a mask and a frame according to another embodiment of the present invention.

Referring to FIGS. 5 and 6 , the mask 20 according to another embodiment may include a plurality of cell portions (C) including a plurality of mask patterns (P). Additionally, a slit line (SL) may be formed between each cell portion (C). The cell portions (C) may be spaced apart by the slit line (SL). In addition, one pair of neighboring cell units C may each be supported on one side on the same grid unit 35. Referring to (b) of FIG. 5, it can be seen that the right side and left side of the two neighboring cell parts C are supported on the second grid part 35 indicated by a dotted line, respectively.

Unlike the mask 20 of FIG. 2 in which the cell portions C are connected to each other through the partition portion SR, the cell portions C of the mask 20 of FIG. 5 may be spaced apart from each other by the slit line SL. The surface of the lower support part 30 (the border part 31 and the first and second grid parts 33 and 35) may be exposed between the cell parts C by the slit line SL. As will be described later, as each cell portion C is not connected by the slit line SL and exists independently, each cell portion C is sequentially attached to the close support portion 200 as described later in FIGS. 17 to 19. It can be connected to the top. In addition, residual stress exists only in each cell portion (C) and can be prevented from affecting other cell portions (C).

Hereinafter, the description will be made assuming that the cell portions C of the mask 20 are spaced apart from each other by the slit line SL.

7 to 14 are schematic diagrams showing the manufacturing process of the connection body 100 between the mask and the support portion according to an embodiment of the present invention.

Referring to FIG. 7, a support portion 30', which is a conductive substrate 30', is prepared. To enable electroforming, the support portion 30' may be made of a conductive material. In order to have conductivity and low resistance at the same time, high concentration doping of 10 ¹⁹ cm ^-3 or more may be performed on the support portion 30'. Doping may be performed on the entire support 30' or only on the surface portion of the support 30'. According to one embodiment, the surface resistance of the support portion 30' may be 5 X 10 ^-4 to 1 X 10 ^-2 ohm·cm. The support portion 30' can be used as a cathode electrode in electroplating.

Unlike metal with metal oxide on the surface and polycrystalline silicon with grain boundaries, doped single crystal silicon has no defects, so a uniform plating film is formed due to the formation of a uniform electric field on the entire surface during electroplating. Alternatively, there is an advantage that a mask 20 can be created. The mask 20 manufactured through a uniform plating film can further improve the image quality level of OLED pixels. In addition, since there is no need to perform additional processes to remove and solve defects, there is an advantage in that process costs are reduced and productivity is improved.

Next, a patterned insulating portion M1 may be formed on one surface of the conductive substrate 30' (or support portion 30'). The insulating portion M1 is a portion formed to protrude (embossed) on one surface of the support portion 30' and may have insulating properties to prevent the formation of a plating film (or mask 20). Accordingly, the insulating portion M1 may be formed of any one of photoresist, silicon oxide, and silicon nitride. The insulating part M1 can be formed of silicon oxide or silicon nitride on the support part 30' by a method such as deposition, and can be formed by thermal oxidation or thermal nitridation using the support part 30' as a base. You can also use this method. Photoresist can also be formed using a printing method or the like. It is preferable that the insulating portion M1 is formed thicker than the plating film to be created.

The insulating portion M1 preferably has a tapered shape. When forming a tapered pattern using photoresist, multiple exposure methods and methods of varying exposure intensity for each area can be used.

In addition to the insulating part M1, a patterned insulating part MC (or dummy insulating part MC) may be further formed on one surface of the support part 30'. The insulating portion M1 may be formed in an area corresponding to the cell portion C, and may be formed in an area corresponding to the dummy cell portion DC of the insulating portion MC. The shape of the insulating part MC may be the same as that of the insulating part M1. The insulating portion MC and the insulating portion M1 may be formed together in the same process.

Next, electroplating may be performed on the support portion 30' to form the mask 20. The support portion 30' is used as a cathode body, and an anode body (not shown) opposing it is prepared. The anode body (not shown) may be immersed in a plating solution (not shown), and the support portion 30' may be fully or partially immersed in a plating solution (not shown). Since the insulating portion M1 has insulating properties, a plating film is not formed in a portion corresponding to the insulating portion M1, and thus the mask pattern P of the mask 20 can be formed. The mask pattern P (or insulating part M1) may be formed in an area corresponding to the cell part C. Additionally, a slit line (SL) may be formed between the cell portions (C) by the insulating portion (M1) during the electroplating process.

Additionally, since the insulating portion MC has insulating properties, a plating film is not formed in a portion corresponding to the insulating portion MC, and thus the dummy pattern DP of the mask 20 can be formed. The dummy pattern DP (or insulating portion MC) may be formed in an area corresponding to the dummy cell portion DC.

Meanwhile, the composition of the mask 20 can be controlled so that it has a coefficient of thermal expansion (CTE) similar to that of the silicon material of the support portion 30'. The mask 20 must have a similar coefficient of thermal expansion to the support part 30 so that the mask 20 does not sag on the support part 30, which is a frame. Additionally, changes in pixel position accuracy (PPA), which is an alignment error of the cell portion C and the mask pattern P on the support portion 30, can be minimized.

In consideration of this, the composition of the mask 20 is controlled so that the thermal expansion coefficient of the mask 20 after the support portion 30 made of silicone and the heat treatment (H) to be described later is about ( ^3.5 ± 1) can do. Even if the mask 20 is made of Invar material, the thermal expansion coefficient can be controlled to the same level as that of the support portion 30 made of silicon by electroplating with different composition ratios of Fe and Ni. Alternatively, the thermal expansion coefficient of the mask 20 may be controlled to be smaller or larger than that of the support portion 30 so that the mask 20 can be tightly connected on the support portion 30 depending on process temperature conditions.

Additionally, the mask 20 may be composed of a laminate of two or more plating layers so that the mask 20 has a thermal expansion coefficient similar to that of the silicon material of the support portion 30'. At this time, the first mask layer may be formed of a metal material capable of forming silicide with the support portion 30'. The first mask layer may be formed of a material such as Ni, Co, Ti, Cr, W, Mo, etc., which has high adhesion to the support portion 30 when created by electroplating. The second mask layer may be formed of a material such as Invar or Super Invar, which has a small coefficient of thermal expansion when created by electroplating. Since the first and second mask layers each have different thermal expansion coefficients, the thermal expansion coefficient of the mask 20 can be controlled by adjusting the thickness ratio of the first and second mask layers. The thickness ratio of the first and second mask layers can be controlled by adjusting the electroplating time.

Meanwhile, referring to FIG. 8 , the mask 20 may not be electroplated so that it is formed only on the top surface of the support portion 30', but electroplating may be performed so that it is plated on the top surface and the side surfaces. When performing heat treatment (H), which will be described later, if the mask 20 is formed only on the upper surface of the support portion 30', there is a risk that the edge portion of the mask 20 may be peeled off during the heat treatment (H) process. The plating film 22 can also be formed on the side of the support part 30. Accordingly, as the plating film 22 on the side reinforces the adhesion with the support part 30' on the side of the support part 30', the entire mask 20 is not peeled off during the heat treatment (H) process, and the support part 30 is not peeled off. It has the advantage of being well fixed and attached. The plating film on the side can be removed later by etching or laser cutting.

In addition, when performing heat treatment (H), which will be described later, the mask 20 created by electroplating needs to be well adhered to the support portion 30' without peeling off. To this end, other methods may be considered in addition to plating on the top and side surfaces of the support portion 30'.

As one method, first, the native oxide of the support portion 30' on which electroplating is performed can be controlled. Oxide may be formed on the surface of the support portion 30' made of a silicon wafer. Since a uniform electric field is not generated on the surface with such oxide, the plating film (mask 20) may not be generated uniformly, and the adhesion between the generated plating film (mask 20) and the support portion 30' is low. It can be. Therefore, it is desirable to perform the electroplating process after performing the process to remove native oxide.

Alternatively, another film that mediates adhesion between the plating film (mask 20) and the support part 30' may be further formed. In addition to the barrier film described later, a film or combination of films that provides adhesion to both sides of the film can be used.

As another method, the surface of the support portion 30' can be pretreated before electroplating. Through physical or chemical treatment, the plating film (mask 20) generated in the electroplating process can be created with stronger adhesion on the support part 30'. In addition, the plating method can be controlled in the electroforming process so that the plating film (mask 20) is created with strong adhesion on the support portion 30'.

Next, referring to FIG. 9, the mask 20 and the support portion 30' can be heat treated (H). Heat treatment can be performed at a temperature of 300°C to 800°C. Meanwhile, in addition to the step in FIG. 9, heat treatment may be performed after the thickness reduction process (TN) of the support portion 30' in FIG. 11 or after the etching (EC) process of the support portion 30' in FIG. 13. .

In general, compared to Invar sheet produced by rolling, Invar sheet produced by electroplating has a higher coefficient of thermal expansion. Therefore, the thermal expansion coefficient can be lowered by performing heat treatment on the Invar sheet, but during this heat treatment process, slight deformation may occur in the Invar sheet. If heat treatment is performed only on the mask 20 that exists separately, the entire mask 20 may be bent or some deformation may occur in the mask pattern P. Therefore, there is an advantage in that such deformation can be prevented by performing heat treatment while the support portion 30' and the mask 20 are fixed by adhesive.

In addition, Invar thin plates and silicon wafers produced by electroplating have almost the same thermal expansion coefficient of about 3 to 4 ppi. Therefore, even if heat treatment (H) is performed, the mask 20 and the support portion 30' have the same degree of thermal expansion, so that misalignment due to thermal expansion does not occur, and minute deformation of the mask pattern P can be prevented.

In addition, the present invention is characterized in that the mask 20 and the support portion 30' are attached by heat treatment (H). During the heat treatment (H) process, a connection portion 40 may be formed between the mask 20 and the support portion 30'. The connection portion 40 may be provided as an intermetallic compound that combines the components of the mask 20 and the components of the support portion 30. As components such as Fe and Ni of the mask 20 and Si components of the support portion 30 are combined, the connection portion 40 includes Ni and Si, Fe, Ni and Si, or Fe, It may be provided as a silicide containing Ni or the like. The mask 20 and the support part 30' may be attached to each other via the connection part 40 by the bonding force of the intermetallic compound.

According to one embodiment, the following electroplating pretreatment/electroplating conditions are required as conditions for forming the connection portion 40 provided with silicide. First, high concentration doping of 10 ¹⁹ cm ^-3 or more is performed ^so that the mask 20 can be electroplated on the support portion 30' with ^a surface resistance of about 5 Second, before electroplating of the mask 20, the surface of the support portion 30' made of a silicon wafer can be HF treated to form a Si surface with controlled SiO. Third, Ni-silicide can be promoted by initially forming Ni-rich Fe-Ni and controlling the composition so that the Ni content is 35 to 45%. Alternatively, before electroplating of the Fe-Ni mask 20, the formation of silicide can be promoted by adding a first mask layer such as Ni, Co, Ti, etc. as a glue layer.

Additionally, according to one embodiment, the heat treatment (H) is performed at a temperature of 300°C to 800°C, but the heat treatment (H) process may be performed in several steps. As a two-step heat treatment, Ni ₂ Si is formed in a low temperature region (about 250 to 350°C) and the mask 20 is adhered to the support portion 30', and then gradually raised to a high temperature region (about 450 to 650°C). Heat treatment can be performed. In the case of the Invar mask formed by electroplating, since it has a microcrystal and/or amorphous structure, if the temperature is rapidly raised during heat treatment, the Invar mask may be detached or separated from the silicon wafer support due to volumetric shrinkage. . Therefore, it is desirable to attach the Invar mask to the silicon wafer support at low temperature and then gradually raise the temperature to high temperature to perform heat treatment.

Additionally, according to one embodiment, a reducing atmosphere must be maintained during heat treatment (H). The reducing atmosphere can be H ₂ , Ar, or N ₂ atmosphere. Preferably, dry N ₂ gas can be used to prevent oxidation of the Invar mask. To prevent oxidation of the Invar mask, the O ₂ concentration needs to be managed below 100ppm. Alternatively, a vacuum atmosphere of <10 ^-2 torr may be formed. It can last from 30 minutes to 2 hours.

As a connection portion 40 (adhesive layer) such as Ni silicide or (Ni, Fe)Si silicide is formed at the Ni, Fe-Ni interface of the mask 20 electroplated on the silicon wafer support 30', the mask (20) and the support portion (30') may be attached to each other via the connecting portion (40).

Meanwhile, in order to control the reaction between Ni, Fe-Ni and Si during heat treatment (H), a barrier film (not shown) is formed on the support part 30' before electroplating the mask 20 on the support part 30'. can do. The barrier film can prevent components of the plating film of the mask 20 (eg, Ni, Fe-Ni) from penetrating uncontrolled into the silicon support portion 30'. At the same time, it is desirable for the barrier film to be conductive so that electroplating can be performed on the surface. Considering this, the barrier film may include materials such as titanium nitride (TiN), titanium/titanium nitride (Ti/TiN), tungsten carbide (WC), titanium tungsten (WTi), and graphene. Thin film formation processes such as barrier film deposition can be used without limitation. The barrier film can control the reaction of Fe, Ni, and Si to form uniform silicide, and can ensure that the mask 20 and the connection portion 40 are attached with appropriate adhesion. In addition, the barrier film is a film or combination of films that can provide a predetermined adhesive force or adhesion force to prevent the mask 20 from being separated from the support portion 30' when the mask 20 is electroplated on the support portion 30'. It may be composed of .

By controlling the temperature and time, the thickness (silicide thickness) of the connection part 40 can be controlled from 10 to 300 nm to form an attachment between the support part 30' and the mask 20.

Meanwhile, the cell portions C of the mask 20 may be spaced apart from each other by the slit line SL. Accordingly, during the heat treatment (H) of the mask 20, residual stress exists independently in each cell portion (C). If the plurality of cell portions (C) are integrally connected to each other, residual stress due to the heat treatment (H) occurs in the entire portion of the mask (20), and the edge portion of the shell portion (C) becomes the support portion (30) during the heat treatment (H) process. ), there is a higher possibility of tearing or bending deformation occurring. Accordingly, by forming a slit line (SL) between the cell portions (C) to separate each cell portion (C), the residual stress caused by the heat treatment (H) can be reduced.

Next, referring to FIG. 10 , after removing the insulating portions M1 and MC, a template 80 can be attached to the mask 20 . The template 80 is a medium that can move the mask 20 in a supported state by attaching it to one surface. In order to support the mask 20 as a whole, the size of the template 80 may be a flat plate shape with the same or larger area as the mask 20, and is preferably circular in shape corresponding to the shape of the mask 20.

The template 80 may be made of materials such as wafer, glass, silica, quartz, alumina (Al ₂ O ₃ ), borosilicate glass, and zirconia.

The template 80 may be attached to the mask 20 via a temporary adhesive portion 85. The temporary adhesive portion 85 may be formed on one surface of the template 80 or the mask 20. The temporary adhesive portion 85 reduces the thickness of the support portion 30' (see FIG. 11), and the mask 20/support portion 30' is temporarily used until an etching (EC) process (see FIG. 13) is performed. It may be adhered to one surface of the template 80 and supported on the template 80.

The temporary adhesive portion 85 may use liquid wax, an adhesive, or an adhesive sheet that can be separated by any one of heat application, chemical treatment, UV application, and ultrasonic application.

As an example, the temporary adhesive portion 85 may use liquid wax. The liquid wax can be the same as the wax used in the polishing step of a semiconductor wafer, and the type is not particularly limited. Liquid wax is mainly a resin component for controlling adhesion, impact resistance, etc. regarding holding power, and may include substances such as acrylic, vinyl acetate, nylon, and various polymers, and solvents. As an example, the temporary adhesive portion 85 may use SKYLIQUID ABR-4016, which contains acrylonitrile butadiene rubber (ABR) as a resin component and n-propyl alcohol as a solvent component. Liquid wax can be formed using spin coating.

The temporary adhesive part 85, which is a liquid wax, has lower viscosity at temperatures higher than 85°C to 100°C, and its viscosity increases at temperatures lower than 85°C and can partially harden like a solid, thereby fixing the mask 20 and template 80. It can be glued.

The temporary adhesive portion 85 may fill at least a portion of the space between the mask patterns P of the mask 20 . Accordingly, the mask 20/support part 30' can be more strongly supported by adhesive to the template 80, and deformation can be effectively prevented in the thickness reduction process (TN) of the support part 30', which will be described later.

Next, referring to FIG. 11, after adhering the mask 20/support portion 30' on the template 80, a thickness reduction process (TN) of the support portion 30' (or conductive substrate 30') is performed. ) can be performed. The thickness reduction process (TN) may be performed on the lower surface (second surface), which is opposite to the upper surface (first surface) of the support portion 30' that contacts the mask 20. The thickness reduction process (TN) can be performed using methods such as lapping, polishing, and buffing.

In order for the close contact support part 200 to sufficiently transmit the adhesion force to the upper mask 20 and the support part 30 by applying the magnetic field of the magnet 1310 (see Figure 26), the thickness of the mask 20/support part 30 must be It must be thin. Since the thickness of the mask 20 is sufficiently thin, approximately 2㎛ to 12㎛, it is necessary to further reduce the thickness of the support portion 30'. For example, the support portion 30' (or the conductive substrate 30'), which is a silicon wafer, has a thickness of about 725 ㎛, so it is necessary to reduce the thickness. In addition, it is necessary to appropriately reduce the thickness so that it has the rigidity to support the mask 20 and can also be stretched on a cell unit C basis (see FIGS. 17 to 19). Considering this, the thickness of the support portion 30' after the thickness reduction process (TN) may be about 50 μm to 200 μm.

If the thickness reduction process (TN) of the support portion 30' is performed immediately, the support portion 30' becomes thinner and its rigidity decreases, which may cause distortion or bending problems. However, in the present invention, since the template 80 adhesively supports the mask 20/support portion 30', deformation of the support portion 30' can be prevented during the thickness reduction process (TN).

On the other hand, the mask 20/support portion 30' is not adhesively supported by the template 80 having a plate shape such as a wafer or glass, but a holder (not shown) or a gripper (not shown) is used. A thickness reduction process (TN) may be performed after fixing the mask 20/support 30' to the back.

Next, referring to FIG. 12, the lower surface of the reduced thickness support portion 30' (or conductive substrate 30'), that is, the upper surface (first surface) in contact with the mask 20, is opposite to the lower surface. An adhesive portion 50' may be formed on the lower surface (second surface). The adhesive portion 50' may include at least one material selected from Cu, Au, Ag, Al, Sn, In, Bi, Zn, Sb, Ge, and Cd. The adhesive portion 50 is preferably formed using a sputtering method or a brazing method that can easily form a thin film without material limitations, but is not limited thereto.

Next, in order to provide etching resistance, an insulating portion M2 may be formed on the lower surface of the adhesive portion 50' except for portions corresponding to the cell portion C and the dummy cell portion DC. The insulating portion (M2) may be formed of photoresist using a printing method, etc., or may be formed of oxide or nitride that serves as a hard mask using methods such as thermal oxidation or thermal nitridation. It may be possible. Meanwhile, metal can also be used as a mask for etching.

Next, referring to FIG. 13, the support portion 30' (or the conductive substrate 30') may be etched (EC). Etching (EC) may be performed on the second surface (lower surface), which is opposite to the first surface (upper surface) of the support part 30' to which the mask 20 is attached. The exposed portion of the lower surface of the support portion 30' and the adhesive portion 50' that is not covered by the insulating portion M2 may be etched (EC). Etching (EC) may be performed on a portion of the support portion 30' corresponding to the cell portion C of the mask 20. The portion corresponding to the partition SR of the mask 20 is not etched. Additionally, etching (EC) can also be performed on a portion of the support portion 30' corresponding to the dummy cell portion DC of the mask 20. Additionally, etching (EC) may be performed on the adhesive portion 50', and etching (EC) of the adhesive portion 50' and the support portion 30' may be performed in one process or in separate processes.

The support portion 30 on which etching (EC) has been completed may have a shape including an edge portion 31 and grid portions 33 and 35. An adhesive portion 50' may be formed on the lower surfaces of the edge portion 31 and the grid portions 33 and 35. The remaining shape of the adhesive portion 50' may correspond to the shape of the edge portion 31 and the grid portions 33 and 35.

The template 80 is formed during the etching (EC) process, or after the etching (EC) process, the support portion 30 is formed into a cell region (CR)/dummy cell region ( When the empty area increases as in DCR (see FIG. 4), there is an advantage in that the mask 20/support portion 30 can be adhesively supported to prevent the support portion 30 from being deformed. Additionally, there is an advantage of protecting the surface of the mask 20 during the etching (EC) process.

It is preferable to use a dry etching method with anisotropic etching characteristics for etching (EC) so that the edge portion 31 and the grid portions 33 and 35 are clearly visible in the support portion 30. Since the support portion 30' (or conductive substrate 30') is a silicon wafer, there is an advantage in that etching (EC) can be performed using existing semiconductor-related technology and MEMS (Micro Electro Mechanical Systems)-related technology. .

Meanwhile, the etching (EC) process of FIG. 13 may perform wet etching rather than dry etching. Since wet etching has isotropic etching characteristics, an undercut may occur with respect to the insulating portion M2 on the second surface (lower surface) of the support portion 30'. In addition, since it has isotropic etching characteristics, the side surfaces of the edge portion 31 and the first and second grid portions 33 and 35 can be formed to be tapered. In this case, since the organic material source 1600 can move at an inclined angle along the tapered side, the shadow effect can be prevented primarily in the support part 30 and secondarily in the tapered mask pattern (P). There are benefits to this.

According to one embodiment, etching (EC) may be performed by immersing the laminate of the mask 20/support 30'/adhesive portion 50' in an etchant for Si wet etching. The Si etchant can be selected from a solution containing 1 to 25% of KOH or NaOH in ultrapure water. Alternatively, a solution containing 1 to 25% TMAH in ultrapure water can be selected. The temperature at which the etching process is performed may be room temperature to 80°C.

Si may be etched only in areas opened by a hard mask such as PR, SiN, or SiO, and an end point of etching may be formed at the mask 20/support 30' interface. That is, only the silicon wafer may be etched (EC) and the mask 20 may not be etched.

In addition, if Si etching is performed by selecting the orientation of the silicon wafer, anisotropic etching is possible, so the taper inclination angle of the side surfaces of the above-described edge portion 31 and the first and second grid portions 33 and 35 can also be adjusted. there is.

On the other hand, according to one embodiment, when an OH base etchant is used in Si wet etching, it is difficult to use the insulating part M2 made of a general PR material. Therefore, when using an OH base etchant, the insulating part (M2) can use an epoxy-based PR or a nitride- or oxide-based hard mask such as SiN or SiO.

In addition, wet etching may have very different etching rates depending on the crystal direction of the Si support 30'. For example, (100) and (110) planes have high etch rates for wet etching, while (111) planes have low etch rates. Accordingly, the present invention can alternately use wet etching and dry etching to etch (EC) the exposed portion of the lower surface of the support portion 30'.

Wet etching has the characteristics of low cost and high productivity, but has a low etch rate in certain aspects. Dry etching has the advantage of showing the same etch rate in all aspects, but has the characteristics of high cost and low productivity, and etching is performed only through dry etching. In this case, there is a risk of exceeding the operating limits of the etching equipment. Accordingly, first, wet etching can be performed when the (100) and (110) surfaces are exposed on the lower surface of the support portion 30'. If the (111) surface is exposed during wet etching, the (111) surface can be removed by dry etching and then wet etching can be performed again.

Meanwhile, according to another embodiment, the insulating part M2 may be formed directly on the lower surface (second surface) of the support part 30' without forming the adhesive part 50' in the step of FIG. 12. Then, etching (EC) of the support portion 30' (or conductive substrate 30') may be performed. Afterwards, adhesive portions 50' may be formed on the edge portion 31 of the support portion 30 and the lower surfaces of the first and second grid portions 33 and 35.

According to another embodiment, the adhesive portion 50' is not formed on the lower surface of the support portion 30, but is formed on the upper surface of the close contact support portion 200 (or close contact sheet portion 60) in FIG. 50') may be formed.

Next, referring to FIG. 14, the insulating portion M2 can be removed. Then, when subsequent processing processes such as cleaning are completed, the connection body 100 of the mask 20 and the support portion 30 can be provided. A connection part 40 may be formed between the mask 20 and the support part 30, and an adhesive part 50' may be formed in the lower part of the support part 30.

Figures 15 and 16 are schematic diagrams showing the manufacturing process of the connection body 10 of the mask and the frame according to an embodiment of the present invention. The support portion 30 and the close support portion 200 may serve as a frame that supports the mask 20.

Referring to FIG. 15, a close support portion 200 may be provided. The close support portion 200 may be provided in a state in which a close contact frame 70 and a close contact sheet portion 60 including an edge sheet portion 61 and a plurality of first and second grid sheet portions 63 and 65 are connected. . As an example, the close contact sheet portion 60 and the close contact frame 70 may be provided in a state in which they are interconnected via a weld bead WB created through welding. Alternatively, etching, processing, etc. may be performed on a disc-shaped material to provide a close contact support portion 200 that includes the close contact sheet portion 60 and the close contact frame 70 as one body.

Next, referring to FIG. 16, the upper part of the close support part 200 can be brought into contact with the lower part of the support part 30. The close contact support parts 200 may be in contact with each other through the adhesive part 50' of the support part 30.

Optionally, a process of separating the template 80 from the mask 20 (or the connection body 100 of the mask 20 and the support portion 30) may be further performed. The separation of the mask 20 (or the connector 100 of the mask 20 and the support portion 30) and the template 80 is achieved by applying heat, chemical treatment, ultrasonic waves, or UV to the temporary adhesive portion 85. It can be done through either one. For example, when heat at a temperature higher than 85°C to 100°C is applied, the viscosity of the temporary adhesive portion 85 is lowered, the adhesive strength between the template 80 and the mask 20 is weakened, and the template 80 is separated. It can be. As another example, the template 80 may be separated by dissolving or removing the temporary adhesive portion 85 by immersing the temporary adhesive portion 85 in a chemical substance such as IPA, acetone, or ethanol. As another example, when ultrasonic waves or UV light is applied, the adhesive force between the template 80 and the mask 20 may weaken and the template 80 may be separated.

Optionally, the template 80 may not be separated. In this case, in the process of connecting the mask 20 and the support part 30 through the adhesive part 50' and the close contact support part 200 in the subsequent process, the template 80 is uniformly distributed at the top. There is an advantage in being able to apply pressure. FIG. 16 shows a state in which the template 80 is not separated, and FIGS. 17 to 19 show a state in which the template 80 is separated.

Subsequently, at least one of heat (ET) and pressure (EP) may be applied to the support portion 30, the adhesive portion 50', and the close contact support portion 200. Heat treatment may be performed by applying heat (ET) to the support portion 30, the adhesive portion 50', and the close contact support portion 200. Alternatively, heat treatment may be performed by applying less heat ET by applying pressure EP at the same time as applying heat ET to the support part 30, the adhesive part 50', and the close support part 200.

Heat treatment by applying heat (ET) and pressure (EP) may be performed within a range where the adhesive portion 50' can connect the support portion 30 and the close contact support portion 200. For example, as the metals of the adhesive portion 50' are melted through heat treatment and then solidified again, the support portion 30 and the close support portion 200 may be connected. As another example, the metal components of the adhesive portion 50' diffuse into the support portion 30 and the close support portion 200, or conversely, the components of the support portion 30 and the close contact support portion 200 diffuse into the adhesive portion 50', or mutually Connection may be performed by changing the interface state of the support portion 30 and the close support portion 200 in such a way that the components diffuse.

Heat treatment may be performed at a temperature of about 200°C to 800°C, and more preferably at a temperature of about 200°C to 400°C, which is the low temperature range.

Next, subsequent processes such as heat treatment and cleaning can be performed to complete the manufacture of the connection body 10 of the mask and frame as shown in FIGS. 2 and 6. The support part 30 and the close support part 200 are connected via an adhesive part 50, and the support part 30 includes an edge part 31 and first and second grid parts 33 and 35, and the support part 30 ) may be provided in a form in which the mask 20 is connected to the top. The cell portion C of the mask 20 is not supported by the support portion 30/close support portion 200 and is provided as an open area at the bottom to serve as a movement path for the organic source 1600 in the OLED pixel deposition process. You can.

17 to 19 are (a) schematic side views specifically showing the process of connecting the support portion 30 and the close support portion 200 in the manufacturing process of the mask-frame connector 10 according to an embodiment of the present invention. Cross-sectional view, (b) schematic plan view.

As described above in FIG. 16, heat (ET) and pressure (EP) are applied to the surrounding areas of all cell portions C to form a close contact with the support portion 30 and the support portion 200 via the adhesive portion 50' [or, Adhesion sheet portion 60] can be connected. Alternatively, as shown in FIGS. 17 to 19, the support portion 30 and the close contact support portion 200 (or the close contact sheet portion 60) may be connected sequentially on the peripheral area of each cell portion C.

First, referring to FIG. 17, heat ET and pressure EP can be applied only to the surrounding area of the cell portion C1 located at the center of the mask 20 among the cell portions C. The adhesive portion 50' on the peripheral area of the cell portion C1 may mediate the connection between the support portion 30 (grid portions 33 and 35) and the close contact support portion 200 (grid sheet portions 63 and 65). . The portion of the adhesive portion 50' connecting the support portion 30 and the close support portion 200 in the area around the shell portion C1 is indicated with square shading in (b) of FIG. 17.

Next, referring to FIG. 18, heat (ET) and pressure (EP) can be applied only to the surrounding areas of the cell portion (C1) and the eight neighboring cell portions (C2 to C9). The adhesive portion 50' on the peripheral area of the cell portions C2 to C9 mediates the connection between the support portion 30 (grid portions 33, 35) and the close support portion 200 (grid sheet portions 63, 65). You can.

Since the adhesive portion 50 has already been formed in the surrounding area of the cell portion C1 and the support portion 30 and the support portion 200 are connected and fixed, a tensile force F2 is applied to the edges of the mask 20 and the support portion 30 in the radial direction. ~F9) can be authorized. Since the template 80 is in a separated state, the alignment of each cell portion (C2 to C9) can be further controlled by adjusting the tension force (F2 to F9) with respect to the connection body 100 of the mask and the support portion. Heat (ET) and pressure (EP) can be applied simultaneously to the surrounding areas of eight cell parts (C2 to C9). Since the thickness of the support portion 30 is relatively thin, approximately 50 μm to 200 μm, there is an advantage in that the position of the cell portions C2 to C9 can be aligned by applying the tensile force (F2 to F9).

Alternatively, the tensile force (F2 to F9) is sequentially applied in a radial or 360° direction from the cell portion (C2) to the cell portion (C9) among the eight cell portions (C2 to C9), and the tensile force (F2 to F9) is sequentially applied to the cell portions (C2 to C9). Heat (ET) and pressure (EP) can be applied to the surrounding area to connect the support part 30 and the support part 200 in close contact with the adhesive part 50. As an example, first, while applying a tensile force F2 to the mask and the support part 30 in the upward direction, heat (ET) and pressure (EP) are applied to the surrounding area of the cell part C2 to The support part 30/close support part 200 can be connected to the surrounding adhesive part 50. In the following order, heat (ET) and pressure (EP) are applied to the surrounding area of the cell portion (C3) while applying a tensile force (F3) to the mask 20 and the support portion (30) in the upper right direction. The support part 30/close support part 200 can be connected to the periphery of C3) using an adhesive part 50. In the following order, heat (ET) and pressure (EP) are applied to the surrounding area of the cell portion (C4) while applying a tensile force (F4) to the mask 20 and the support portion (30) in the right direction. ) can be connected to the support portion 30/close support portion 200 with an adhesive portion 50 around the periphery. By repeating the above process, the support portion 30 and the close support portion 200 can be connected with the surrounding areas of the cell portion C2 to C9 aligned in order.

Next, referring to FIG. 19, heat ET and pressure EP may be applied to the surrounding areas of the cell parts C neighboring the eight cell parts C2 to C9 of FIG. 18. The support parts 30/close support parts 200 in the surrounding areas of the cell parts C neighboring the eight cell parts C2 to C9 can be connected simultaneously or sequentially along the radial direction. The support part 30/close support part 200 can be connected to the dummy part DM of the mask 20 via the adhesive part 50. In the process of attaching the neighboring cell parts C to the eight cell parts C2 to C9, a tensile force (F10 to...) may be applied to the edges of the mask 20 and the support part 30 in a radial direction. By repeating this, the support portion 30 and the close support portion 200 can be connected on the surrounding areas of all cell portions C.

As described above, the present invention first connects the support portion 30/close support portion 200 around the central cell portion C1, and sequentially aligns the positions of the outer cell portion C, while simultaneously aligning the outer shell portion C1. Since the support portion 30/close support portion 200 can be connected, there is an effect of clarifying the positions of each cell portion C and the mask pattern P of the corresponding cell portion C. Accordingly, the amount of variation in pixel position accuracy (PPA) between each cell portion C can be minimized.

Figures 20 to 25 are schematic diagrams showing the process of manufacturing the close contact support portion 200 according to an embodiment of the present invention.

Referring to FIG. 20, a second template 90 can be prepared. The second template 90 is a medium that allows the contact sheet portion 60' to be moved in a supported state by being adhered to one surface. In order to support the close contact sheet portion 60' as a whole, the size of the second template 90 may be a flat plate shape with an area equal to or larger than that of the close contact sheet portion 60'.

The second template 90 may be made of the same material as the template 80 described above in FIG. 10 . Additionally, the second template 90 may be adhered to the close contact sheet portion 60' via the second temporary adhesive portion 95. The second temporary adhesive portion 95 may be made of the same material as the temporary adhesive portion 85 described above in FIG. 10 . The method described above in FIG. 10 can be applied in the same manner as the method of bonding the second template 90 and the contact sheet portion 60' via the second temporary adhesive portion 95.

The close contact sheet portion 60' may be provided with a thickness of approximately 100㎛. For example, a close contact sheet portion 60' that is reduced to about 100 ㎛ by performing a thickness reduction process on a metal sheet made of Invar material can be used.

Next, referring to FIG. 21, a patterned insulating portion MA may be formed on the contact sheet portion 60'. The insulating portion M3 may be formed of a photoresist material using a printing method or the like.

Subsequently, etching (EC) of the contact sheet portion 60' may be performed. Methods such as dry etching and wet etching can be used without limitation, and as a result of etching, the portion of the contact sheet portion 60' exposed through the empty space between the insulating portions M3 may be etched (EC). The etched portion of the contact sheet portion 60' is sized to correspond to a micro display of approximately 1 to 2 inches, and this portion is connected to the cell region (CR)/dummy cell region (DCR) of the support portion 30. can be provided. After etching (EC), the contact sheet portion 60' may be a close contact sheet portion 60 in which an edge sheet portion 61 and first and second grid sheet portions 63 and 65 are formed.

Next, referring to FIG. 22, manufacturing of the second template 90 supporting the close contact sheet portion 60 can be completed by removing the insulating portion M3.

Next, referring to FIG. 23 , the second template 90 on which the close contact sheet portion 60 is adhesively supported can be loaded onto the close contact frame 70 . The second template 90 can be moved by the chuck 97. For example, the surface opposite to the surface of the second template 90 to which the contact sheet portion 60 is attached may be adsorbed and transferred by the vacuum chuck 97.

The close contact sheet portion 60 may be in contact with the close contact frame 70 . That is, the edge sheet portion 61 of the close contact sheet portion 60 may be in contact with the upper surface of the close contact frame 70. By loading the second template 90 onto the contact frame 70, the contact sheet portion 60 can be made to correspond to the contact frame 70. Since the second template 90 compresses the close contact sheet portion 60, the close contact sheet portion 60 and the close contact frame 70 may be in close contact with each other.

Next, the close contact sheet portion 60 can be attached to the close contact frame 70 by laser welding by irradiating a laser L between the close contact sheet portion 60 and the close contact frame 70. A weld bead (WB) is created between the laser-welded edge sheet portion 61 and the close contact frame 70, and the close contact sheet portion 60 can be connected to the close contact frame 70 through the weld bead (WB). . Weld beads WB may be created at predetermined intervals along the formation direction of the edge sheet portion 61.

Next, referring to FIG. 24, after connecting the close contact sheet portion 60 and the close contact frame 70, the second template 90 can be debonded from the close contact sheet portion 60. The process of separating the template 80 described above in FIG. 16 from the mask 20 can be applied as is. Separation of the close contact sheet portion 60 and the second template 90 is achieved by applying at least one of heat application (ET), chemical treatment (CM), ultrasound application (US), and UV application (UV) to the second temporary adhesive portion 95. It can be done through one.

Accordingly, as shown in FIGS. 24 and 25, the form in which the close contact sheet portion 60 is connected to the close contact frame 70 is completed. This can be provided as a close support 200.

Figure 26 is a schematic diagram showing an OLED pixel deposition apparatus 1000 using a connection body 10 of a mask and a support part according to an embodiment of the present invention.

Referring to FIG. 26, the OLED pixel deposition apparatus 1000 includes a magnet plate 1300 on which a magnet 1310 is accommodated and a coolant line 1350 is disposed, and an organic material source 1600 from the bottom of the magnet plate 1300. ) includes a deposition source supply unit 1500 that supplies.

A target substrate 1900 such as glass on which the organic material source 1600 is deposited may be interposed between the magnet plate 1300 and the source deposition unit 1500. On the target substrate 1900, the connection body 10 of the mask and frame, which allows the organic material source 1600 to be deposited for each pixel, may be placed in close contact or very close to it. The magnet 1310 generates a magnetic field, and the connecting body 10 of the mask and the frame can be brought into close contact with the target substrate 1900 due to the attractive force caused by the magnetic field. At this time, since the close contact support portions 200 (60, 70) containing a magnetic material are pulled toward the target substrate 1900 from the bottom, the mask 20 and the support portion 30 are also pushed upward toward the target. It can be brought into close contact with the substrate 1900. In addition, in the process of the close support part 200 pushing the mask 20 and the support part 30 onto the target substrate 1900, the mask 20 and the support part 30 may be lowered by their own weight or twisted by tension. Problems with uneven flatness, such as falling, can also be solved.

The deposition source supply unit 1500 can supply the organic material source 1600 by reciprocating the left and right path, and the organic material sources 1600 supplied from the deposition source supply unit 1500 are connected to the mask pattern formed on the connector 10 of the mask and the frame. It may pass through (P) and be deposited on one side of the target substrate 1900. The deposited organic material source 1600 that passes through the mask pattern P of the mask-frame connector 10 may function as a pixel 1700 of the OLED.

Since the mask pattern P is formed with an inclined side (formed in a tapered shape), the deposition of the OLED pixel 700 is uneven due to a shadow effect caused by the organic material sources 1600 passing along the inclined direction. You can prevent it from happening.

As described above, in the present invention, after forming the mask 20 on the support part 30 through electroplating, the support part 30 and the close support part 200 are formed without applying separate physical tension to the mask 20. Because the frame is formed by processing and connecting, there is no risk of the mask being misaligned. Accordingly, the alignment of the mask becomes clear, improving the stability of pixel deposition, and at the same time, it is possible to implement ultra-high definition pixels of 2,000 PPI or more.

Although the present invention has been shown and described with reference to preferred embodiments as described above, it is not limited to the above embodiments and may be modified in various ways by those skilled in the art without departing from the spirit of the invention. Transformation and change are possible. Such modifications and variations should be considered to fall within the scope of the present invention and the appended claims.

10: Connection of mask and frame
20: mask
30: support part
31: border part
33, 35: 1st and 2nd grid parts
40: connection part
50: Adhesive part
60: Close contact sheet portion
61: Border sheet part
63, 65: 1st and 2nd grid sheet parts
70: Close frame
80: Template
90: Second template
100: Connector of mask and support part
200: Close support part
1000: OLED pixel deposition device
C, SR, DM: cell part, compartment part, dummy part
DC: dummy cell part
DP: Dummy pattern
P: mask pattern
SL: slit line
WB: weld bead

Claims (19)

A method of manufacturing a connection between a mask and a support part used in the process of forming an OLED pixel on a semiconductor wafer, comprising:
(a) preparing a conductive substrate;
(b) forming a mask including a mask pattern on the first side of the conductive substrate;
(c) reducing the thickness of the conductive substrate on a second side opposite the first side of the conductive substrate;
(d) etching the conductive substrate on the second side of the conductive substrate to form a support portion including an edge portion and a grid portion;
Including,
Between step (b) and step (c), between step (c) and step (d), or after step (d),
heat-treating the mask and the support to form a connection between the mask and the support including at least one of Fe, Ni, and Si;
A method of manufacturing a connection between a mask and a support portion, further comprising: According to paragraph 1,
A method of manufacturing a connection between a mask and a support portion, wherein the conductive substrate is a silicon wafer. According to paragraph 2,
In step (b), the mask is formed of Invar or Super Invar by electroforming on the conductive substrate. According to paragraph 1,
A method of manufacturing a connection between a mask and a support portion, wherein a template is adhered onto the mask between steps (b) and (c). According to paragraph 4,
A method of manufacturing a connection between a mask and a support part, wherein the template and the mask are bonded to each other via a temporary adhesive part. According to clause 5,
The template is made of any one of wafer, glass, silica, quartz, alumina (Al ₂ O ₃ ), borosilicate glass, and zirconia,
The temporary adhesive part is a liquid wax, adhesive, or adhesive sheet that can be separated by any one of heat application, chemical treatment, UV application, and ultrasonic application. According to paragraph 1,
In step (c), the thickness of the conductive substrate is reduced to 50㎛ to 200㎛. According to paragraph 1,
Between step (c) and step (d),
(c2) on the second side opposite to the first side of the conductive substrate, comprising at least one material selected from the group consisting of Cu, Au, Ag, Al, Sn, In, Bi, Zn, Sb, Ge, and Cd. Forming an adhesive portion;
It further includes,
A method of manufacturing a connection between a mask and a support part, wherein the conductive substrate and the adhesive part are etched in step (d). According to paragraph 1,
After step (d) above,
(d2) on the second surface opposite to the first surface of the support part including the edge portion and the grid portion, among Cu, Au, Ag, Al, Sn, In, Bi, Zn, Sb, Ge, and Cd. Forming an adhesive portion including at least one material;
A method of manufacturing a connection between a mask and a support portion, further comprising: delete According to paragraph 1,
A method of manufacturing a connection between a mask and a support portion, wherein the heat treatment is performed at 300°C to 800°C. According to paragraph 1,
In step (b), a slit line is formed between each cell portion of the mask to space the cell portions apart. According to paragraph 3,
In step (b), the mask is formed on the top and side surfaces of the support using the electroplating method. According to paragraph 1,
The grid part,
a plurality of first grid parts extending in a first direction and having both ends connected to the edge part;
a plurality of second grid parts extending in a second direction perpendicular to the first direction, intersecting the first grid part, and having both ends connected to the edge part;
A method of manufacturing a connection between a mask and a support portion, including a. As a connection between a mask and a support part used in the process of forming OLED pixels on a semiconductor wafer,
A support portion including an edge portion and a grid portion;
a mask connected to the first side of the support portion and including a mask pattern;
Including,
The grid portion includes a plurality of first grid portions extending in a first direction and having both ends connected to the edge portion; a plurality of second grid parts extending in a second direction perpendicular to the first direction to intersect the first grid part, and having both ends connected to the edge part;
The thickness of the support portion is 50㎛ to 200㎛,
A connection body between the mask and the support portion, wherein a connection portion including at least one material selected from Fe, Ni, and Si is formed between the mask and the support portion. According to clause 15,
The support portion includes a single crystal silicon material,
The mask is a connection between the mask and the support portion, including Invar or Super Invar material. According to clause 15,
On the second side opposite to the first side of the support portion, an adhesive portion containing at least one of Cu, Au, Ag, Al, Sn, In, Bi, Zn, Sb, Ge, and Cd is formed, Connector between mask and support. delete According to clause 15,
A connection body between a mask and a support part, wherein a template is attached to the mask via a temporary adhesive part.

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