KR102654974B1 - Temperature controlling apparatus for semiconductor manufacturing apparatus - Google Patents

Abstract

The temperature control device for semiconductor manufacturing equipment forms a cryogenic cooling zone through a second cryogenic refrigerator, a cryogenic tank that maintains the liquefied gas in which the refrigerant gas is liquefied in the cryogenic cooling zone at a cryogenic temperature, and the cryogenic liquefied gas is stored in the semiconductor manufacturing equipment. It includes a first pipe that supplies the semiconductor manufacturing equipment, a second pipe that returns the liquefied gas from the semiconductor manufacturing equipment to the temperature control device for the semiconductor manufacturing equipment, and a control unit that controls the second cryogenic refrigerator.

Description

Temperature control device for semiconductor manufacturing equipment {TEMPERATURE CONTROLLING APPARATUS FOR SEMICONDUCTOR MANUFACTURING APPARATUS}

The present invention relates to a temperature control device for semiconductor manufacturing equipment.

Semiconductor manufacturing processes include photo processes, etching processes, and cleaning processes. Among these, the etching process is a step that removes the lower film portion without photo resist (PR) after the photo process, leaving only the necessary pattern, and is a core process in the semiconductor manufacturing process.

Regarding the etching process in this semiconductor manufacturing process, Korean Patent No. 10-1251072, a prior art, discloses a method of etching a semiconductor device.

Recently, as semiconductor etching processes require technologies for finer line widths (less than 10 nm) and high aspect ratios (more than 100), existing methods are used to solve problems such as the bowing phenomenon where the middle part of the etched surface becomes convex. It became difficult.

In other words, the conventional etching process was difficult to perform at temperatures below -100°C due to the limitations (freezing point) of the R-series refrigerant, which is a mixed liquid refrigerant in the existing chiller method.

However, recently, it has become possible to control polymer, which is a by-product generated during etching at temperatures below -100℃. For this reason, cryogenic etching is required, and technology to maintain the electrostatic chuck (ESC), a key component in the dry etching process, at -100℃ or below (maximum 150℃) is also required.

Using the pre-cooling tank, the refrigerant gas is pre-cooled through the first cryogenic refrigerator, and using the cryogenic tank, a cryogenic cooling zone is formed through the second cryogenic refrigerator, and the liquefied refrigerant gas is maintained at a cryogenic temperature in the cryogenic cooling zone. The object is to provide a temperature control device that

The present invention seeks to provide a temperature control device that supplies extremely low temperature liquefied gas to semiconductor manufacturing equipment using a first pipe, and supplies liquefied gas recovered from the semiconductor manufacturing equipment to a precooling tank using a second pipe.

However, the technical challenges that this embodiment aims to achieve are not limited to the technical challenges described above, and other technical challenges may exist.

As a means to achieve the above-described technical problem, an embodiment of the present invention is a cryogenic cooling zone that forms a cryogenic cooling zone through a second cryogenic refrigerator, and maintains the liquefied gas in the cryogenic cooling zone at a cryogenic temperature. A tank, a first pipe for supplying the cryogenic liquefied gas to the semiconductor manufacturing equipment, a second pipe for recovering the liquefied gas from the semiconductor manufacturing equipment to a temperature control device for the semiconductor manufacturing equipment, and controlling the second cryogenic refrigerator. A temperature control device for semiconductor manufacturing equipment including a control unit can be provided.

According to one embodiment, the cryogenic tank may include a first cryogenic tank that performs a one-step liquefaction of the refrigerant gas and a second cryogenic tank that performs a two-step liquefaction of the refrigerant gas.

According to one embodiment, the first pipe may supply the cryogenic liquefied gas to a refrigerant passage formed in an electrostatic chuck of the semiconductor manufacturing equipment.

According to one embodiment, in the process of lowering the temperature of the electrostatic chuck of the semiconductor manufacturing equipment or the substrate on the electrostatic chuck from a first temperature below room temperature to a second temperature below the first temperature, the control unit controls the temperature of the cryogenic chuck. Liquefied gas can be supplied to the semiconductor manufacturing equipment.

According to one embodiment, a pre-cooling tank for pre-cooling the refrigerant gas through a first cryogenic refrigerator may be further included.

According to one embodiment, the first cryogenic refrigerator may have a smaller capacity than the second cryogenic refrigerator or may be operated at a higher temperature than the second cryogenic refrigerator.

According to one embodiment, a third pipe is connected to the pre-cooling tank and supplies the refrigerant gas stored in the pre-cooling tank to a refrigerant passage formed in an electrostatic chuck of the semiconductor manufacturing equipment and connected to the pre-cooling tank, and the pre-cooling It may further include a fifth pipe that directly supplies the refrigerant gas stored in the tank to the substrate in the chamber.

According to one embodiment, the control unit further controls the first cryogenic refrigerator, and in the process of lowering the temperature of the electrostatic chuck of the semiconductor manufacturing equipment or the substrate on the electrostatic chuck from a temperature above room temperature to the first temperature, the control unit The refrigerant gas stored in the pre-cooling tank may be supplied to the semiconductor manufacturing equipment.

According to one embodiment, the control unit further controls the first cryogenic refrigerator, and adjusts the temperature of the electrostatic chuck of the semiconductor manufacturing equipment or the substrate on the electrostatic chuck from a second temperature below room temperature to a first temperature above the second temperature. During the rising process, the control unit may supply the refrigerant gas stored in the pre-cooling tank to the semiconductor manufacturing equipment.

According to one embodiment, it may further include a gas supply unit that supplies room temperature gas to the semiconductor manufacturing equipment, and a fourth pipe that supplies the room temperature gas from the gas supply unit to the semiconductor manufacturing equipment.

According to one embodiment, the fourth pipe may be connected to the chamber of the semiconductor manufacturing equipment from the gas supply unit.

According to one embodiment, the control unit further controls the gas supply unit, and in the process of increasing the temperature of the electrostatic chuck of the semiconductor manufacturing equipment or the substrate on the electrostatic chuck from room temperature, the control unit controls the gas supply unit to the room temperature. of gas can be supplied to the semiconductor manufacturing equipment.

According to one embodiment, the control unit further controls the gas supply unit, and during a process of increasing the temperature of the electrostatic chuck of the semiconductor manufacturing equipment or the substrate on the electrostatic chuck from a first temperature below room temperature to above room temperature, the control unit may supply the room temperature gas to the semiconductor manufacturing equipment through the gas supply unit.

The above-described means for solving the problem are merely illustrative and should not be construed as limiting the present invention. In addition to the exemplary embodiments described above, there may be additional embodiments described in the drawings and detailed description of the invention.

According to one of the means for solving the problems of the present invention described above, a semiconductor manufacturing equipment that improves the performance of the semiconductor process and process equipment by controlling the temperature of the cryogenic substrate to a cryogenic temperature of -100 ℃ or less, thereby enabling the manufacture of high-specification semiconductors. Cost temperature control device can be provided.

A semiconductor manufacturing facility that uses a temperature control device for semiconductor manufacturing equipment to replace existing chillers in semiconductor etching equipment, probe stations for cryogenic measurement/evaluation, and other process equipment that require a cryogenic range. Cost temperature control device can be provided.

The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description below.

1 is a configuration diagram of a temperature control device for semiconductor manufacturing equipment according to an embodiment of the present invention.
Figure 2 is an exemplary diagram illustrating a process of supplying room temperature gas to semiconductor manufacturing equipment according to an embodiment of the present invention.
Figure 3 is an exemplary diagram illustrating a process of supplying refrigerant gas stored in a pre-cooling tank to semiconductor manufacturing equipment according to an embodiment of the present invention.
Figure 4 is an exemplary diagram illustrating a process of supplying cryogenic liquefied gas to semiconductor manufacturing equipment according to an embodiment of the present invention.
FIG. 5 is an exemplary diagram showing the temperature of an electrostatic chuck or a substrate on an electrostatic chuck of semiconductor manufacturing equipment according to an embodiment of the present invention.
6A and 6B are exemplary diagrams illustrating a process of supplying refrigerant gas and liquefied gas to semiconductor manufacturing equipment in a temperature control device for semiconductor manufacturing equipment consisting of at least two cryogenic tanks according to an embodiment of the present invention.

Below, with reference to the attached drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily implement the present invention. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein. In order to clearly explain the present invention in the drawings, parts that are not related to the description are omitted, and similar parts are given similar reference numerals throughout the specification.

Throughout the specification, when a part is said to be "connected" to another part, this includes not only the case where it is "directly connected," but also the case where it is "electrically connected" with another element in between. . In addition, when a part is said to "include" a certain component, this does not mean excluding other components unless specifically stated to the contrary, but may further include other components, and one or more other features. It should be understood that it does not exclude in advance the presence or addition of numbers, steps, operations, components, parts, or combinations thereof.

In this specification, 'part' includes a unit realized by hardware, a unit realized by software, and a unit realized using both. Additionally, one unit may be realized using two or more pieces of hardware, and two or more units may be realized using one piece of hardware.

In this specification, some of the operations or functions described as being performed by a terminal or device may instead be performed on a server connected to the terminal or device. Likewise, some of the operations or functions described as being performed by the server may also be performed on a terminal or device connected to the server.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the attached drawings.

1 is a configuration diagram of a temperature control device for semiconductor manufacturing equipment according to an embodiment of the present invention. Referring to FIG. 1, the temperature control device 100 includes a first cryogenic refrigerator 110, a pre-cooling tank 120, a second cryogenic refrigerator 130, a cryogenic tank 140, a gas supply unit 150, and a first pipe. It may include (160), a second pipe 161, a third pipe 162, and a control unit 170.

The temperature control device 100 of the present invention is intended to quickly cool the high temperature heat transferred to the substrate during the etching process. Here, the etching process refers to the process of creating a circuit pattern that forms the structure of the semiconductor, requiring a process of removing the remaining parts except the necessary circuit pattern after the photo process of drawing the semiconductor circuit on the substrate is completed. do.

The etching process can form a circuit pattern by removing the remaining part using an etching solution while leaving the photoresist part formed in the photo process. When the etching process is completed, the photoresist can also be removed. The etching process can be repeated to form a desired circuit pattern on the thin films of several layers that make up the semiconductor.

These etching processes are classified into wet and dry depending on the state of the material causing the etching reaction. Recently, as the circuit line width has become finer due to changes in semiconductor technology that is highly integrated at the nanoscale, the pressure is higher than normal atmospheric pressure. The use of the dry etching process, which generates plasma by supplying electrical energy after injecting low-pressure gas into a vacuum chamber, is expanding. Below, a process for quickly cooling the high-temperature heat transferred to the substrate through each part of the temperature control device 100 during the etching process will be described.

The first cryogenic refrigerator 110 and the second cryogenic refrigerator 130 may be capable of cooling to several to tens of K. Accordingly, in the present invention, it is possible to supply liquefied gas at extremely low temperatures such as -70°C, -100°C, and -150°C to semiconductor manufacturing equipment. Accordingly, during the etching process in the semiconductor manufacturing process, the temperature of the substrate or electrostatic chuck can be maintained below -100°C, thereby providing the required process environment.

The pre-cooling tank 120 can pre-cool the refrigerant gas through the first cryogenic refrigerator 110. Here, the pre-cooling tank 120 is used to ensure the continuity of the temperature of the refrigerant gas and to supply the refrigerant gas to the semiconductor manufacturing equipment in real time together with the cryogenic tank 140, which will be described later, and has the same or similar structure as the cryogenic tank 140. and may have functions.

For example, the internal temperature of the pre-cooling tank 120 may be higher than the temperature of the cryogenic tank 140. That is, the first cryogenic refrigerator 110 may have a smaller capacity than the second cryogenic refrigerator 130 or may be controlled by the control unit 170 to operate at a higher temperature than the second cryogenic refrigerator 130.

Here, the refrigerant gas may be, for example, helium gas (He). Helium gas does not become solid at an absolute temperature of 0K at 1 atm, so it is suitable for use as a refrigerant. It is the closest gas to an ideal gas, and is environmentally friendly. , It is a non-reactive inert gas and has the characteristics of safety, non-toxicity, and non-flammability, and has the advantage of not generating by-products during the cooling process.

The cryogenic tank 140 can form a cryogenic cooling zone through the second cryogenic refrigerator 130. Here, the cryogenic tank may be comprised of a plurality of cryogenic tanks, and each of the plurality of cryogenic tanks may perform step-by-step liquefaction (e.g., first-stage liquefaction, second-stage liquefaction, etc.) through each second cryogenic refrigerator.

The cryogenic tank 140 forms a cryogenic cooling zone in a pressurized state higher than the normal pressure of 20K to 80K through the second cryogenic refrigerator 130, thereby maintaining the liquefied gas in which the refrigerant gas is liquefied in the cryogenic cooling zone at a cryogenic temperature. there is. In order to maintain this liquefied gas in a cryogenic state, the cryogenic tank 140 may be formed of a highly thermally conductive metal insulation member or other insulation material finish.

The interior of the cryogenic tank 140 is a vacuum insulation structure that may be configured in the form of a square pillar, sphere, or oval. As the internal vacuum insulation structure is formed in a mesh shape, it can function as a catalytic refrigerant.

Cryogenic tank 140 may include a pressure gauge. The remaining amount of gas inside the cryogenic tank 140 can be checked through a pressure gauge included in the cryogenic tank 140.

The first pipe 160 can supply cryogenic liquefied gas to semiconductor manufacturing equipment. For example, the first pipe 160 may supply high-pressure helium liquefied gas to a refrigerant passage formed in an electrostatic chuck of semiconductor manufacturing equipment or directly to a substrate. This first pipe may be composed of an insulated pipe (for example, SUS pipe).

The first pipe 160 may include a fluid control device. Depending on the usage conditions or type of fluid, the fluid control device controls the supply of fluid so that if the fluid is a gas, it is supplied to an MFC (Mass Flow Controller), and if the fluid is a liquid, it is supplied to a cryo liquid pump. can do. Such a fluid control device may include a temperature sensor and a pressure gauge to automatically control the flow rate of the fluid according to a set flow rate transmitted as an electric signal without being affected by changes in pressure.

The second pipe 161 may supply liquefied gas recovered from semiconductor manufacturing equipment to the precooling tank 120. Through this, the liquid refrigerant can circulate through the refrigerant passage formed in the electrostatic chuck and the temperature control device.

The third pipe 162 may supply the refrigerant gas stored in the pre-cooling tank 120 to semiconductor manufacturing equipment.

Here, we will briefly describe the refrigerant flow path formed in the electrostatic chuck. The etching process in the semiconductor manufacturing process uses high-temperature plasma, and the high-temperature heat transferred to the substrate during the etching process is quickly cooled after the process, allowing it to move on to the next process. Quickly and effectively cooling a high-temperature substrate heated by plasma is one of the important matters in the semiconductor manufacturing process. In the present invention, a method of circulating low-temperature refrigerant through a refrigerant passage formed inside an electrostatic chuck is used to cool the high-temperature substrate. The substrate can be cooled. Here, a refrigerant inlet pipe and a refrigerant outlet pipe are connected to the refrigerant passage formed in the electrostatic chuck, and a refrigerant passage through which a cooling fluid (e.g., coolant, etc.) flows is formed, thereby performing the function of a cooling means for cooling the electrostatic chuck. can do.

The gas supply unit 150 can supply gas at room temperature to semiconductor manufacturing equipment. For example, the gas supply unit 150 may supply gas at room temperature to the chamber through a fourth pipe (not shown) connected to the chamber. Here, the chamber has a cylindrical shape and is made of, for example, aluminum, and the inner wall may be anodized. The chamber may be a space where substrate processing is performed using corrosive room temperature gas. The fourth pipe is connected to the chamber and may be a pipe that communicates with the interior of the chamber.

The control unit 170 may control the first cryogenic refrigerator 110, the second cryogenic refrigerator 130, and the gas supply unit 150.

Generally, the etching process is divided into a plurality of processing processes, and each processing process includes a temperature maintenance step, and the temperature of the substrate is maintained at the temperature (predetermined temperature) required for each process through the temperature maintenance step. do. However, since the temperature required for each processing process is different, a temperature raising step to increase the temperature of the substrate or a temperature lowering step to lower the temperature of the substrate is included between two consecutive processing processes.

The temperature of the substrate required for each process can be controlled by the refrigerant gas stored in the pre-cooling tank 120, the cryogenic liquefied gas stored in the cryogenic tank 140, and the room temperature gas from the gas supply unit 150.

Hereinafter, in order to quickly cool the high temperature heat transferred to the substrate during the etching process through FIGS. 2 to 5 after the process, the first cryogenic refrigerator 110, the second cryogenic refrigerator 130, and the gas supply unit 150 are used. Let me explain the control process.

Figure 2 is an exemplary diagram showing a process of supplying room temperature gas to semiconductor manufacturing equipment according to an embodiment of the present invention, and Figure 5 is an electrostatic chuck or electrostatic chuck of semiconductor manufacturing equipment according to an embodiment of the present invention. This is an exemplary diagram showing the temperature of the upper substrate.

2 and 5, the control unit 170 performs a process of raising the temperature of the electrostatic chuck of semiconductor manufacturing equipment or a substrate on an electrostatic chuck from room temperature (P1 process) and a process of maintaining the temperature of the substrate above room temperature (P2 process). ), gas at room temperature can be supplied to the semiconductor manufacturing equipment through the gas supply unit 150.

Alternatively, the control unit 170 may supply room temperature gas through the gas supply unit 150 during a process (P5 process) of increasing the temperature of the electrostatic chuck of the semiconductor manufacturing equipment or the substrate on the electrostatic chuck from the first temperature below room temperature to above room temperature. can be supplied as semiconductor manufacturing equipment.

Figure 3 is an exemplary diagram illustrating a process of supplying refrigerant gas stored in a pre-cooling tank to semiconductor manufacturing equipment according to an embodiment of the present invention.

3 and 5, the control unit 170 performs a process of lowering the temperature of the electrostatic chuck of the semiconductor manufacturing equipment or the substrate on the electrostatic chuck from a temperature above room temperature to a first temperature (P3 process) and a process of maintaining the temperature at the first temperature. (P4 process), the refrigerant gas stored in the pre-cooling tank 120 can be supplied to semiconductor manufacturing equipment.

Alternatively, the control unit 170 may use the pre-cooling tank 120 during a process (P8 process) of increasing the temperature of the electrostatic chuck of the semiconductor manufacturing equipment or the substrate on the electrostatic chuck from a second temperature below room temperature to a first temperature above the second temperature. The refrigerant gas stored in can be supplied to semiconductor manufacturing equipment.

Figure 4 is an exemplary diagram illustrating a process of supplying cryogenic liquefied gas to semiconductor manufacturing equipment according to an embodiment of the present invention.

Referring to FIGS. 4 and 5, the control unit 170 performs a process (process P6) of lowering the temperature of the electrostatic chuck of the semiconductor manufacturing equipment or the substrate on the electrostatic chuck from a first temperature below room temperature to a second temperature below the first temperature. ) and during the process of maintaining the second temperature (P7 process), the cryogenic liquefied gas stored in the cryogenic tank 140 can be supplied to the semiconductor manufacturing equipment.

Returning to FIG. 1, the control unit 170 performs a process of increasing the temperature of the electrostatic chuck or the substrate from room temperature or a process of increasing the temperature of the electrostatic chuck or the substrate from a first temperature below room temperature to above room temperature (P5 process), The first cryogenic refrigerator 110 and the second cryogenic refrigerator 130 can be operated in a standby state.

6A and 6B are exemplary diagrams illustrating a process of supplying refrigerant gas and liquefied gas to semiconductor manufacturing equipment in a temperature control device for semiconductor manufacturing equipment consisting of at least two cryogenic tanks according to an embodiment of the present invention.

Referring to FIG. 6A, it shows the configuration of a temperature control device for semiconductor manufacturing equipment consisting of at least two cryogenic tanks 140. The cryogenic tank 140 is connected and operated in parallel with the second cryogenic refrigerator 130. It may be composed of at least two or more cryogenic tanks. At least two cryogenic tanks 140 may perform liquefaction through one second cryogenic refrigerator 130. Here, at least two cryogenic tanks 140 may perform step-by-step liquefaction (e.g., first-step liquefaction, second-step liquefaction, etc.) through each second cryogenic refrigerator, but the present invention is not limited thereto.

The present invention can provide the advantage of lowering the temperature of the electrostatic chuck and shortening the time for the vaporized liquefaction to be re-liquefied by connecting at least two cryogenic tanks 140 in parallel with the second cryogenic refrigerator 130. Additionally, when the capacity of the first cryogenic tank 141 becomes insufficient as the process time increases, the second cryogenic tank 142 can be used to prevent problems during the process.

The first pipe 160 can supply cryogenic liquefied gas to semiconductor manufacturing equipment.

The second pipe 161 may supply liquefied gas recovered from semiconductor manufacturing equipment to the precooling tank 120.

The third pipe 162 may supply the refrigerant gas stored in the pre-cooling tank 120 to the refrigerant flow path formed in the electrostatic chuck of the semiconductor manufacturing equipment.

The fourth pipe 163 can supply room temperature gas from the gas supply unit 150 to the semiconductor manufacturing equipment. Here, the fourth pipe 163 is connected to the chamber and may be a pipe that communicates from the gas supply unit 150 to the inside of the chamber. For example, the fourth pipe 163 can supply room temperature gas from the gas supply unit 150 to the semiconductor manufacturing equipment, allowing the substrate to be processed at room temperature.

The fifth pipe 164 may supply the refrigerant gas stored in the pre-cooling tank 120 to the chamber of the semiconductor manufacturing equipment. To this end, the fifth pipe 164 may be connected to the fourth pipe 163, and by connecting the fifth pipe 164 to the fourth pipe 164, the refrigerant gas stored in the pre-cooling tank 120 may be connected to the fifth pipe 163. It can be supplied directly to the substrate of the semiconductor manufacturing equipment through the fourth pipe 163 through the pipe 164.

That is, the pre-cooling tank 120 is connected to the third pipe 162 and the fifth pipe 164, but the refrigerant gas can be supplied to the refrigerant flow path formed in the electrostatic chuck of the semiconductor manufacturing equipment through the third pipe 162. In addition, by supplying the refrigerant gas from the pre-cooling tank 120 through the fifth pipe 164 to the chamber of the semiconductor manufacturing equipment through the fourth pipe 163 connected to the fifth pipe 164, the refrigerant is supplied to the substrate in the chamber. Gas can be supplied directly.

Referring to FIG. 6B, the process of supplying the refrigerant gas and the extremely low temperature liquefied gas stored in the pre-cooling tank 120 to the semiconductor manufacturing equipment is shown. The temperature of the electrostatic chuck of the semiconductor manufacturing equipment or the substrate on the electrostatic chuck is kept below room temperature. During the process of lowering the first temperature to the second temperature below the first temperature, the control unit 170 may supply cryogenic liquefied gas to the semiconductor manufacturing equipment through the first pipe 160. At this time, the control unit 170 may supply refrigerant gas from the precooling tank 120 to the chamber of the semiconductor manufacturing equipment through the fifth pipe 164.

Through this, the control unit 170 can directly supply the refrigerant gas from the pre-cooling tank 120 to the substrate in the chamber of the semiconductor manufacturing equipment through the fourth pipe 163 connected to the fifth pipe 164.

The description of the present invention described above is for illustrative purposes, and those skilled in the art will understand that the present invention can be easily modified into other specific forms without changing the technical idea or essential features of the present invention. will be. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive. For example, each component described as unitary may be implemented in a distributed manner, and similarly, components described as distributed may also be implemented in a combined form.

The scope of the present invention is indicated by the claims described below rather than the detailed description above, and all changes or modified forms derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention. do.

100: thermostat
110: First cryogenic freezer
120: Precooling tank
130: Second cryogenic freezer
140: cryogenic tank
150: gas supply unit
160: 1st pipe
161: 2nd pipe
162: Third pipe
163: 4th pipe
164: Fifth pipe
170: control unit

Claims (13)

In a temperature control device for semiconductor manufacturing equipment,
A cryogenic tank that forms a cryogenic cooling zone through a second cryogenic refrigerator and maintains the liquefied refrigerant gas liquefied in the cryogenic cooling zone at a cryogenic temperature;
a first pipe supplying the cryogenic liquefied gas to semiconductor manufacturing equipment;
a second pipe that returns liquefied gas from the semiconductor manufacturing equipment to a temperature control device for the semiconductor manufacturing equipment; and
Control unit for controlling the second cryogenic refrigerator
Including,
The cryogenic tank includes a first cryogenic tank that performs one-step liquefaction of the refrigerant gas and a second cryogenic tank that performs two-step liquefaction of the refrigerant gas.
delete According to claim 1,
The first pipe supplies the cryogenic liquefied gas to a refrigerant passage formed in an electrostatic chuck of the semiconductor manufacturing equipment.
According to claim 1,
In the process of lowering the temperature of the electrostatic chuck of the semiconductor manufacturing equipment or the substrate on the electrostatic chuck from a first temperature below room temperature to a second temperature below the first temperature, the control unit controls the cryogenic liquefied gas to be used to manufacture the semiconductor. Temperature control device for semiconductor manufacturing equipment, which is supplied as equipment.
In a temperature control device for semiconductor manufacturing equipment,
A cryogenic tank that forms a cryogenic cooling zone through a second cryogenic refrigerator and maintains the liquefied refrigerant gas liquefied in the cryogenic cooling zone at a cryogenic temperature;
a first pipe supplying the cryogenic liquefied gas to semiconductor manufacturing equipment;
a second pipe that returns liquefied gas from the semiconductor manufacturing equipment to a temperature control device for the semiconductor manufacturing equipment; and
Control unit for controlling the second cryogenic refrigerator
Including,
A pre-cooling tank for pre-cooling the refrigerant gas through a first cryogenic refrigerator.
A temperature control device for semiconductor manufacturing equipment, further comprising:
According to claim 5,
The first cryogenic refrigerator has a smaller capacity than the second cryogenic refrigerator or is operated at a higher temperature than the second cryogenic refrigerator.
According to claim 5,
a third pipe connected to the pre-cooling tank and supplying the refrigerant gas stored in the pre-cooling tank to a refrigerant flow path formed in an electrostatic chuck of the semiconductor manufacturing equipment; and
A fifth pipe connected to the pre-cooling tank and directly supplying the refrigerant gas stored in the pre-cooling tank to the substrate in the chamber.
A temperature control device for semiconductor manufacturing equipment, further comprising:
According to claim 5,
The control unit further controls the first cryogenic refrigerator,
During the process of lowering the temperature of the electrostatic chuck of the semiconductor manufacturing equipment or the substrate on the electrostatic chuck from a temperature above room temperature to a first temperature, the control unit supplies the refrigerant gas stored in the pre-cooling tank to the semiconductor manufacturing equipment. , Temperature control device for semiconductor manufacturing equipment.
According to claim 5,
The control unit further controls the first cryogenic refrigerator,
In the process of increasing the temperature of the electrostatic chuck of the semiconductor manufacturing equipment or the substrate on the electrostatic chuck from a second temperature below room temperature to a first temperature above the second temperature, the control unit controls the refrigerant gas stored in the pre-cooling tank to A temperature control device for semiconductor manufacturing equipment, which is supplied to semiconductor manufacturing equipment.
In a temperature control device for semiconductor manufacturing equipment,
A cryogenic tank that forms a cryogenic cooling zone through a second cryogenic refrigerator and maintains the liquefied refrigerant gas liquefied in the cryogenic cooling zone at a cryogenic temperature;
a first pipe supplying the cryogenic liquefied gas to semiconductor manufacturing equipment;
a second pipe that returns liquefied gas from the semiconductor manufacturing equipment to a temperature control device for the semiconductor manufacturing equipment; and
Control unit for controlling the second cryogenic refrigerator
Including,
a gas supply unit that supplies gas at room temperature to the semiconductor manufacturing equipment; and
A fourth pipe that supplies the room temperature gas from the gas supply unit to the semiconductor manufacturing equipment.
A temperature control device for semiconductor manufacturing equipment, further comprising:
According to claim 10,
The fourth pipe is connected from the gas supply unit to a chamber of the semiconductor manufacturing equipment.
According to claim 10,
The control unit further controls the gas supply unit,
In the process of raising the temperature of the electrostatic chuck of the semiconductor manufacturing equipment or the substrate on the electrostatic chuck from room temperature, the control unit supplies the gas at room temperature to the semiconductor manufacturing equipment through the gas supply unit. thermostat.
According to claim 10,
The control unit further controls the gas supply unit,
During the process of increasing the temperature of the electrostatic chuck of the semiconductor manufacturing equipment or the substrate on the electrostatic chuck from a first temperature below room temperature to above room temperature, the control unit supplies the room temperature gas to the semiconductor manufacturing equipment through the gas supply unit. A temperature control device for semiconductor manufacturing equipment.