KR102652120B1 - Substrate cleaning equipment, substrate treatment system including the same, and method for fabricating semiconductor device using the same - Google Patents

Abstract

By changing the design of the nozzle that sprays the cleaning liquid, we provide substrate cleaning equipment that can improve particle removal on the substrate after chemical mechanical planarization (CMP). The substrate cleaning equipment includes a substrate holder configured to support a substrate, a swing body that moves along a sweep line on the main surface of the substrate, and a pad attachment surface coupled to the swing body and facing the substrate holder. The pad attachment surface includes a head portion to which a buffing pad is attached, a first cleaning liquid supply structure that is coupled to the swing body and sprays a first cleaning liquid on the main surface of the substrate, and a first cleaning liquid supply structure that sprays the first cleaning liquid on the main surface of the substrate. 2 It includes a second cleaning liquid supply structure that sprays cleaning liquid, and the first cleaning liquid supply structure includes a first nozzle arm movably coupled to the swing body and a first cleaning liquid supply nozzle coupled to the first nozzle arm.

Description

Substrate cleaning equipment, substrate treatment system including the same, and method for fabricating semiconductor device using the same}

The present invention relates to substrate cleaning equipment, a substrate processing system including the same, and a semiconductor device manufacturing method using the same. More specifically, the present invention relates to substrate cleaning equipment for cleaning a substrate after chemical mechanical planarization (CMP), and a system including the same. and methods.

After a chemical mechanical planarization (CMP) process is performed on the substrate, the substrate is typically cleaned to remove unwanted debris and particles from the substrate. For example, slurry, polished substrate material, or other residue may adhere to the substrate, including the edge bezels of the substrate.

After CMP, the substrates may be rinsed to remove unwanted material on the substrate. Additionally, the substrate after CMP can be transferred to a cleaning module such as a scrubber brush box, megasonic tank, etc. However, some particles and residues remaining after CMP may be difficult to remove using cleaning methods such as brush box scrubbing and megasonic tank immersion.

The problem to be solved by the present invention is to provide substrate cleaning equipment that can improve particle removal on a substrate after chemical mechanical planarization (CMP) by changing the design of a nozzle that sprays a cleaning liquid.

Another problem that the present invention seeks to solve is to provide a substrate processing system that can improve particle removal on a substrate after chemical mechanical planarization (CMP) by changing the design of a nozzle that sprays a cleaning liquid.

Another problem that the present invention aims to solve is to provide a semiconductor device manufacturing method that can improve yield and reliability by using substrate cleaning equipment with a changed design of a nozzle that sprays a cleaning liquid.

The problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

One aspect of the substrate cleaning equipment of the present invention for solving the above problem includes a substrate holder configured to support a substrate, a swing body that moves along a sweep line on the main surface of the substrate, and a swing. A head part that is coupled to the main body and includes a pad attachment surface facing the substrate holder, the pad attachment surface is coupled to the head part and the swing body to which the buffing pad is attached, and applies a first cleaning liquid to the main surface of the substrate. It includes a first cleaning liquid supply structure for spraying a first cleaning liquid, and a second cleaning liquid supply structure for spraying a second cleaning liquid on the main surface of the substrate, wherein the first cleaning liquid supply structure includes a first nozzle arm movably coupled to the swing body, 1 Includes a first cleaning liquid supply nozzle coupled with the nozzle arm.

Another aspect of the substrate cleaning equipment of the present invention for solving the above problems includes a substrate holder configured to support a substrate, a swing body moving along a sweep line on the main surface of the substrate, and a swing body coupled to the swing body and facing the substrate holder. A head portion including a pad attachment surface, the pad attachment surface being coupled to a head portion to which a buffing pad is attached, a swing body, a first cleaning liquid supply structure for spraying the first cleaning liquid on the main surface of the substrate, and a swing body; , and a second cleaning liquid supply structure that sprays the second cleaning liquid on the main surface of the substrate.

One aspect of the substrate processing system of the present invention for solving the above other problems is a substrate processing system for processing a substrate, comprising a chemical mechanical planarization (CMP) equipment, and receiving the substrate after the major surface of the substrate has been planarized in the CMP equipment. A substrate cleaning equipment comprising: a substrate cleaning equipment configured to support a substrate; a swing body moving along a sweep line on a major surface of the substrate; a pad coupled to the swing body and opposing the substrate holder; A head portion including an attachment surface, wherein the pad attachment surface is a head portion to which a buffing pad is attached, a first cleaning liquid supply structure coupled to the swing body and spraying the first cleaning liquid on the main surface of the substrate, and a first cleaning liquid supply structure on the main surface of the substrate. 2 It includes a second cleaning liquid supply structure that sprays cleaning liquid, and the first cleaning liquid supply structure includes a first nozzle arm movably coupled to the swing body and a first cleaning liquid supply nozzle coupled to the first nozzle arm.

One aspect of the semiconductor device manufacturing method of the present invention to solve the above another problem is to planarize the main surface of the substrate through a chemical mechanical planarization (CMP) process, and after the CMP process, use substrate cleaning equipment to flatten the substrate. Cleaning a major surface of a substrate, wherein the substrate cleaning equipment includes a substrate holder configured to support the substrate, a swing body that moves along a sweep line on the major surface of the substrate, the swing body coupled to the swing body, and the substrate cleaning equipment disposed opposite to the substrate holder. A head portion including a pad attachment surface, the pad attachment surface being coupled to a head portion to which a buffing pad is attached, a swing body, a first cleaning liquid supply structure for spraying the first cleaning liquid on the main surface of the substrate, and the main surface of the substrate. It includes a second cleaning liquid supply structure that sprays a second cleaning liquid on a surface, and the first cleaning liquid supply structure includes a first nozzle arm movably coupled to the swing body and a first cleaning liquid supply nozzle coupled to the first nozzle arm. Includes.

Other specific details of the invention are included in the detailed description and drawings.

1 is a schematic top view of a substrate processing system including substrate cleaning equipment according to some embodiments.
2 is a schematic diagram illustrating a CMP post-processing unit including substrate cleaning equipment according to some embodiments.
3 is a cross-sectional view of substrate cleaning equipment according to some embodiments.
FIG. 4 is a diagram illustrating the substrate, head portion, swing body, and first and second cleaning liquid supply structures of FIG. 3.
FIG. 5 is a diagram for explaining the structures of the head portion, swing body, and first and second cleaning liquid supply structures of FIG. 3.
6 and 7 are diagrams for explaining the operation of the substrate cleaning equipment when the substrate rotates counterclockwise.
Figure 8 is a diagram for explaining the operation of the substrate cleaning equipment when the substrate rotates clockwise.
9 is a diagram for explaining substrate cleaning equipment according to some embodiments.
10 is a diagram for explaining substrate cleaning equipment according to some embodiments.
11 is a cross-sectional view of substrate cleaning equipment according to some embodiments.
FIG. 12 is a diagram illustrating the substrate, head portion, swing body, and first and third cleaning liquid supply structures of FIG. 11.
13 is a diagram for explaining substrate cleaning equipment according to some embodiments.
Figure 14 is a cross-sectional view of a substrate cleaning equipment according to some embodiments.
FIG. 15 is a diagram illustrating the substrate, head portion, swing body, and first to third cleaning liquid supply structures of FIG. 14.
16 to 18 are diagrams for explaining substrate cleaning equipment according to some embodiments.
19 to 22 are diagrams for explaining substrate cleaning equipment according to some embodiments.
23 and 24 are diagrams for explaining substrate cleaning equipment according to some embodiments.
25 is a flowchart illustrating a method of manufacturing a semiconductor device using substrate cleaning equipment according to some embodiments.

1 is a schematic top view of a substrate processing system including substrate cleaning equipment according to some embodiments.

1, the substrate cleaning equipment according to some embodiments is provided as an included example configuration of a substrate processing system; however, according to some embodiments the substrate cleaning equipment may be used alone or in a substrate processing system with alternative configurations. Of course, it can be used together with .

Referring to FIG. 1 , the substrate processing system may include a chemical mechanical planarization equipment 110 and a factory interface 120.

The chemical mechanical planarization equipment 110 may include an enclosure 111, a carousel 112, a controller 113, and at least one CMP station 115.

The enclosure 111 may be an environmentally controlled space in which a chemical mechanical planarization process (hereinafter referred to as a CMP process) occurs. A carousel 112 and at least one CMP station 115 may be placed inside the enclosure 111.

The carousel 112 may be placed in the center of the enclosure 111, for example. The carousel 112 may include a plurality of support arms 114 each supporting the polishing head 117. A substrate 100 requiring a CMP process is loaded onto the polishing head 117.

The carousel 112 can rotate the plurality of support arms 114 to move the polishing head 117 onto the CMP station 115. The polishing head 117 loaded with the substrate 100 may be moved over the polishing pad 116.

The controller 113 may facilitate control and integration of the chemical mechanical planarization equipment 110 and the factory interface 120 included in the substrate processing system. Controller 113 may be coupled to various components of a substrate processing system to facilitate control of, for example, planarization, cleaning and transfer processes.

The CMP station 115 can planarize the substrate 100 loaded on the polishing head 117. When there are a plurality of CMP stations 115, each CMP station 115 may flatten different materials, but is not limited thereto.

In FIG. 1, there are three CMP stations 115 and four support arms 114, but the number is not limited thereto.

The factory interface 120 includes a substrate cassette 121, a first transfer unit 122, a second transfer unit 126, an input module 123, a CMP post-processing unit 125, and an output module ( 124) may be included.

The substrate cassette 121 may store the substrate 100 before or after the CMP process.

The first transfer unit 122 may move the substrate 100 before the CMP process from the substrate cassette 121 to the input module 123. Alternatively, the first transfer unit 122 may move the substrate 100 after the CMP process from the input module 123 to the CMP post-processing unit 125. Alternatively, the first transfer unit 122 may move the substrate 100 within the CMP post-processing unit 125 or move the substrate 100 from the CMP post-processing unit 125 to the output module 124. there is. Alternatively, the first transfer unit 122 may move the CMP post-processed substrate 100 from the output module 124 to the substrate cassette 121.

The input module 123 can store the substrate 100 before being input into the chemical mechanical planarization equipment 100. Alternatively, the input module 123 may store the substrate 100 before it comes out of the chemical mechanical planarization equipment 100 and is input into the CMP post-processing unit 125.

The second transfer unit 124 may move the substrate 100 between the input module 123 and the chemical mechanical planarization equipment 100. The second transfer unit 124 is shown as being external to the chemical mechanical planarization equipment 110, but this is only for convenience of explanation and is not limited thereto. A portion of the second transfer unit 124 may be disposed within the enclosure 111 of the chemical mechanical planarization equipment 110.

The CMP post-processing unit 125 may remove residues or particles that may remain on the substrate 100 after the CMP process. A detailed description of the CMP post-processing unit will be provided later.

The output module 124 may store the CMP post-processed substrate 100.

Of course, unlike what is shown, one or more components included in the factory interface 120 of FIG. 1 may be configured as one component. Conversely, it goes without saying that one component included in the factory interface 120 of FIG. 1 can be divided into a plurality of components.

Operation of the substrate processing system may be as follows. The substrate 100 may be transferred from one of the substrate cassettes 121 to the input module 123 by the first transfer unit 122 . Next, the second transfer unit 126 can load the polishing head 117 of the chemical mechanical planarization equipment 110 from the input module 123. The substrate 100 loaded on the polishing head 117 may be horizontally oriented (direction parallel to the ground). The substrate 100 loaded on the polishing head 117 may be moved onto the polishing pad 116 of the CMP station 115 and polished. After the substrate 100 is polished, the polished substrate 100 may be transferred to the input module 123 by the second transfer unit 126. Afterwards, the first transfer unit 122 recovers the polished substrate 100 and transfers it to the CMP post-processing unit 125. While cleaning the substrate 100, the substrate 100 may be vertically oriented within each cleaning equipment included in the CMP post-processing unit 125. The CMP post-processed substrate 100 is transferred to the output module 124. The first transfer unit 122 may transfer the CMP post-processed substrate 100 to the substrate cassette 121 while returning it to a horizontal orientation.

2 is a schematic diagram illustrating a CMP post-processing unit including substrate cleaning equipment according to some embodiments.

2, the CMP post-processing unit 125 includes, for example, a megasonic equipment 125A, a substrate cleaning equipment 125B, a first brush equipment 125C, a second brush equipment 125D, and a substrate drying equipment ( 125E) may be included.

The substrate cleaning equipment 125B can remove residues or particles that may remain on the polished substrate after the CMP process using chemical and physical methods. Substrate cleaning equipment 125B may be particle cleaning equipment.

The substrate stored in the input module 123 sequentially passes through the megasonic equipment (125A), substrate cleaning equipment (125B), first brush equipment (125C), second brush equipment (125D), and substrate drying equipment (125E). It may be moved to output module 124.

The megasonic equipment 125A, substrate cleaning equipment 125B, first brush equipment 125C, second brush equipment 125D, and substrate drying equipment 125E each have a vertically oriented substrate, i.e., a polished surface substantially It can be loaded and processed in a vertical direction (e.g., gravity direction).

In FIG. 2, the CMP post-processing unit 125 is shown as having four types of post-processing equipment excluding the substrate cleaning equipment 125B, but is not limited thereto.

3 is a cross-sectional view of substrate cleaning equipment according to some embodiments. FIG. 4 is a diagram illustrating the substrate, head portion, swing body, and first and second cleaning liquid supply structures of FIG. 3. FIG. 5 is a diagram for explaining the structures of the head portion, swing body, and first and second cleaning liquid supply structures of FIG. 3. 6 and 7 are diagrams for explaining the operation of the substrate cleaning equipment when the substrate rotates counterclockwise. Figure 8 is a diagram for explaining the operation of the substrate cleaning equipment when the substrate rotates clockwise.

For reference, Figure 4 may be a top view viewed from above the main surface 100a of the substrate.

3 to 5, the substrate cleaning equipment 125B according to some embodiments includes a housing 301, a substrate holder 310, a swing body 320, a head portion 330, and a first cleaning liquid supply structure. It may include 340 and a second cleaning liquid supply structure 350.

The housing 301 may provide an internal space for cleaning the substrate 100. The housing 301 may include, but is not limited to, a cover 302 that can be opened and closed to allow the substrate 100 to enter and exit the housing 301. Although not shown, the housing 301 may include a drain formed in the lower portion of the housing 301. Through the drain, the fluid used to clean the substrate 100 can be removed.

The substrate holder 310 may be accommodated within the housing 301 . The substrate 100 may be loaded on the substrate holder 310 . The substrate holder 310 may be configured to support the substrate 100 . The substrate holder 310 may be coupled to the first rotation device 303. The first rotation device 303 may rotate the substrate holder 310 . While the substrate holder 310 rotates, the substrate 100 loaded on the substrate holder 310 also rotates.

Substrate holder 310 may be one of an electrostatic chuck, a vacuum chuck, or a mechanical gripper. Alternatively, substrate holder 310 may be any suitable mechanism for securely holding substrate 100 while cleaning substrate 100 in substrate cleaning equipment 125B.

The substrate 100 may include a main surface 100a and a bottom surface 100b that face each other. The main surface 100a of the substrate may be a surface on which a CMP process has been performed. The main surface 100a of the substrate may be a surface planarized by chemical mechanical planarization equipment (110 in FIG. 1). For example, the main surface 100a of the substrate may be a surface on which semiconductor devices, etc. are formed.

The substrate 100 may be loaded into the substrate holder 310 such that the major surface 100a of the substrate faces the swing body 320. The substrate holder 310 may support the loaded substrate 100 to be oriented and maintained in the second direction Y (gravity direction or vertical direction). While cleaning the major surface 100a of the substrate using the buff pad 335, the substrate holder 310 may be configured to maintain the substrate 100 in a vertical orientation.

The swing body 320 may be arranged to be spaced apart from the substrate holder 310 in the third direction (Z). The swing body 320 may be disposed on the main surface 100a of the substrate loaded in the substrate holder 310.

When the substrate cleaning equipment 125B operates, the swing body 320 may move linearly along the first direction (X) on the main surface 100a of the substrate. The swing body 320 can move along a sweep line (SWEEP LINE) on the main surface 100a of the substrate.

The first direction (X) may be parallel to the sweep line (SWEEP LINE). The sweep line (SWEEP LINE) may pass through the center of the substrate 100 and the substrate center line (WCL) parallel to the second direction (Y).

Swing body 320 may be combined with linear motion device 307. The linear motion device 307 may move the swing body 320 along the first direction (X). For example, the swing body 320 may reciprocate along a sweep line.

The head portion 330 may be disposed within the housing 301. The head portion 330 may be coupled to the swing body 320. The head portion 330 may include a pad attachment surface 330s to which the buffing pad 335 is attached. The pad attachment surface 330s of the head portion may face the substrate holder 310. The pad attachment surface 330s of the head portion may face the main surface 100a of the substrate.

The head portion 330 may be coupled to the second rotation device 304. The second rotation device 304 can rotate the head portion 330. While the head portion 330 rotates, the buffing pad 335 attached to the pad attachment surface 330s may rotate.

While the swing body 320 moves along the first direction (X), the head portion 330 coupled to the swing body 320 may also move along the first direction (X). When the substrate cleaning equipment 125B operates, the head portion 330 may rotate and move linearly along the first direction (X). That is, the head portion 330 can also move linearly along the sweep line (SWEEP LINE). Here, the “sweep line” may be a line connecting the area through which the center of the pad attachment surface 330s of the head portion 330 passes.

The substrate holder 310 may rotate in the first rotation direction RD1. Since the substrate holder 310 rotates in the first rotation direction RD1, the substrate 100 may also rotate in the first rotation direction RD1. The head portion 330 disposed on the main surface 100a of the substrate may rotate in the second rotation direction RD2.

In the substrate cleaning equipment 125B according to some embodiments, the first rotational direction RD1 in which the substrate 100 rotates may be the same as the second rotational direction RD2 in which the head 330 rotates. .

Here, the “rotation direction” may be the direction in which the substrate 100 rotates based on the direction (-Z direction) in which the swing body 320 views the substrate 100. For example, the first rotation direction RD1 and the second rotation direction RD2 in FIG. 4 may be counterclockwise.

The first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 may each be coupled to the swing body 320. The first cleaning liquid supply structure 340 may spray the first cleaning liquid (340L in FIG. 6) on the main surface 100a of the substrate. The second cleaning liquid supply structure 350 may spray the second cleaning liquid (350L in FIG. 6) on the main surface 100a of the substrate.

When the substrate cleaning equipment 125B operates, the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 are supplied with the first cleaning liquid and the second cleaning liquid supply structure 350 at the boundary of the buffing pad 335 that meets the main surface 100a of the substrate. 2 Cleaning liquid can be sprayed. Depending on the operating conditions of the substrate cleaning equipment 125B, the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 may adjust the flow rate of the sprayed cleaning liquid.

The first cleaning solution and the second cleaning solution may each include a chemical solution. The chemical solution may, for example, chemically separate residues or particles attached to the main surface 100a of the substrate from the main surface 100a of the substrate.

While the swing body 320 moves along the first direction (X), the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 may also move along the first direction (X). The first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 may spray cleaning liquid on the main surface 100a of the substrate while moving along the first direction (X).

The first cleaning liquid supply structure 340 may include a first nozzle arm 341 and a first cleaning liquid supply nozzle 342. The first nozzle arm 341 may be coupled to the swing body 320. The first cleaning liquid supply nozzle 342 may be coupled to the first nozzle arm 341.

The second cleaning liquid supply structure 350 may include a second nozzle arm 351 and a second cleaning liquid supply nozzle 352. The second nozzle arm 351 may be coupled to the swing body 320. The second cleaning liquid supply nozzle 352 may be combined with the second nozzle arm 351.

The first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 may be connected to flow transfer sources that supply the first cleaning liquid and the second cleaning liquid, respectively.

The positions of the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 may vary depending on the rotation direction of the substrate 100 . This will be explained in detail below using FIGS. 6 and 7 .

The rinsing liquid supply structure 306 may be disposed inside the housing 301. Rinse fluid supply structure 306 may provide deionized water or any suitable fluid to substrate 100. The rinsing liquid supply structure 306 may be connected to a flow rate delivery source.

Using FIGS. 4, 6, and 7, the operation of the substrate cleaning equipment 125B when the substrate 100 rotates counterclockwise will be described.

The swing body 320 may pass through the first point (P1) and the second point (P2) of the sweep line (SWEEP LINE). That is, the first point (P1) and the second point (P2) are included in the sweep line (SWEEP LINE). The center of the head portion 330 also passes through the first point (P1) and the second point (P2). The first point P1 is closer to the first substrate edge line WEL1 than the second point P2.

The first substrate edge line WEL1 is parallel to the substrate center line WCL and meets the substrate 100 . Additionally, the first substrate edge line WEL1 is the line furthest from the substrate center line WCL in the first direction (X). The second substrate edge line WEL2 may correspond to the first substrate edge line WEL1 about the substrate center line WCL.

When the substrate cleaning equipment 125B operates and the buffing pad 335 moves along the sweep line, the center of the buffing pad 335, that is, the center of the head portion 330, is aligned with the substrate center line (WCL). You can pass. While the buffing pad 335 moves along the sweep line (SWEEP LINE), the buffing pad 335 may pass through the first substrate edge line (WEL1) and the substrate center line (WCL), but may pass through the second substrate edge line (WCL). WEL2) does not pass. For example, the sweep line (SWEEP LINE) may move approximately half of the main surface 100a of the substrate. The movement of the swing body 320 moving along the sweep line (SWEEP LINE) may proceed from one side approximately based on the center of the substrate 100, that is, the center line (WCL) of the substrate.

The direction from the first point (P1) to the second point (P2) is the positive first direction (+X), and the direction from the second point (P2) to the first point (P1) is the negative first direction. It may be (-X). The direction from the substrate 100 toward the buffing pad 335 is the positive third direction (+Z), and the direction toward the substrate 100 from the buffing pad 335 is the negative third direction (-Z). It can be. The positive second direction (+Y) and negative second direction (-Y) can be explained using FIG. 3. The positive second direction (+Y) is the direction in which the substrate 100 flows out of the housing 301, and the negative second direction (-Y) is the direction in which the substrate 100 is input into the housing 301. It can be.

An XX-YY plane may be defined on the swing body 320 that overlaps the buffing pad 335 in the third direction (Z). The origin of the XX-YY plane may be the center of the buffing pad 335. The center of the buffing pad 335 may be the center of the pad attachment surface 330s of the head portion.

In the XX-YY plane, the XX axis may be a sweep line. The YY axis is perpendicular to the XX axis. The positive direction of the YY axis may be a positive second direction (+Y), and the negative direction of the YY axis may be a negative second direction (-Y).

In the XX-YY plane, the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 may each be located in an area where the YY axis value of the XX-YY plane has a positive value. Alternatively, the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 may be located in an area having a positive value on the XX axis.

In FIG. 7 , the first cleaning liquid supply structure 340 may be located in an area with a positive value on the XX axis. The second cleaning liquid supply structure 350 may be disposed in an area in the XX-YY plane where the YY axis has a positive value. For example, the second cleaning liquid supply structure 350 may be located in an area with positive values of the YY axis. The line (XX axis) passing through the center of the buffing pad 335 and the first cleaning liquid supply structure 340 is perpendicular to the line (YY axis) passing through the center of the buffing pad 335 and the second cleaning liquid supply structure 350. You can.

The positions of the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 shown in FIG. 7 are merely exemplary and are not limited thereto. That is, of course, the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 may be disposed in positions corresponding to the first or second quadrant of the XX-YY plane, respectively.

The first cleaning liquid supply structure 340 may spray the first cleaning liquid 340L near the boundary where the buffing pad 335 and the main surface 100a of the substrate meet. Since the substrate 100 rotates counterclockwise and the first cleaning liquid 340L is affected by centrifugal force, most of the first cleaning liquid 340L sprayed on the main surface 100a of the substrate is on the substrate 100. It moves in the direction of the first cleaning liquid flow (340LF) toward the edge. The first cleaning liquid 340L moving in the first cleaning liquid flow direction 340LF does not gather at the center of the substrate 100, but flows out of the substrate 100 through the edge of the substrate 100.

The second cleaning liquid supply structure 350 may spray the second cleaning liquid 350L near the boundary where the buffing pad 335 and the main surface 100a of the substrate meet. Since the substrate 100 rotates counterclockwise and the second cleaning liquid 350L is affected by centrifugal force, most of the second cleaning liquid 350L sprayed on the main surface 100a of the substrate is on the substrate 100. It moves in the direction of the second cleaning liquid flow (350LF) toward the edge. The second cleaning liquid 350L moving in the second cleaning liquid flow direction 350LF does not gather at the center of the substrate 100, but flows out of the substrate 100 through the edge of the substrate 100.

Particles attached to the main surface 100a of the substrate may be chemically separated from the main surface 100a of the substrate by the first cleaning liquid 340L and the second cleaning liquid 350L. Additionally, particles attached to the main surface 100a of the substrate may be physically separated from the main surface 100a of the substrate by the buffing pad 335. In this way, particles chemically and physically separated from the main surface 100a of the substrate may be moved together with the first cleaning liquid 340L and the second cleaning liquid 350L. That is, particles separated from the main surface 100a of the substrate are moved to the edge of the substrate 100 along the first cleaning liquid flow direction 340LF and the second cleaning liquid flow direction 350LF, and can exit the substrate 100. there is.

On the other hand, when the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 are located in an area in the XX-YY plane where the YY axis has a negative value, or an area where the XX axis has a negative value, , most of the first cleaning liquid (340L) and most of the second cleaning liquid (350L) may be collected near the center of the substrate 100. In this case, particles separated from the main surface 100a of the substrate may be adsorbed again near the center of the main surface 100a of the substrate.

Using FIGS. 4, 7, and 8, the operation of the substrate cleaning equipment 125B when the substrate 100 rotates clockwise will be described. The explanation will focus on differences from what was explained using FIG. 6.

When the substrate 100 rotates clockwise, the second cleaning liquid supply structure 350 that sprays the second cleaning liquid 350L may be disposed in an area where the YY axis value has a negative value in the XX-YY plane. .

Unlike what is shown in FIG. 8, the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 may be disposed in positions corresponding to the third or fourth quadrant of the XX-YY plane, respectively. am.

9 is a diagram for explaining substrate cleaning equipment according to some embodiments. For convenience of explanation, the description will focus on differences from those described using FIGS. 3 to 8.

For reference, Figure 9 is a diagram for explaining the coupling relationship between the nozzle arm and the cleaning liquid supply nozzle.

Referring to FIGS. 5 and 9 , in substrate cleaning equipment according to some embodiments, the first cleaning liquid supply nozzle 342 may be rotatably coupled to the first nozzle arm 341.

The first cleaning liquid supply nozzle 342 may be coupled to the first nozzle arm 341 so that it can rotate in various directions.

By rotating the first cleaning liquid supply nozzle 342 with respect to the first nozzle arm 341, the first cleaning liquid can be sprayed at a location where more spraying of the first cleaning liquid is needed during the substrate cleaning process.

Likewise, the second cleaning liquid supply nozzle 352 may be rotatably coupled to the second nozzle arm 351.

In at least one of the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350, a cleaning liquid supply nozzle may be rotatably coupled to the nozzle arm.

10 is a diagram for explaining substrate cleaning equipment according to some embodiments. For convenience of explanation, the description will focus on differences from those described using FIGS. 3 to 8.

For reference, FIG. 10 is a diagram for explaining the coupling relationship between the cleaning liquid supply structure and the swing body.

Referring to FIG. 10 , in the substrate cleaning equipment according to some embodiments, the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 may each be movably coupled to the swing body 320.

For example, the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 may each be coupled to the swing body 320 so as to be movable in a straight line.

The swing body 320 may include a first guide rail 340GL and a second guide rail 350GL extending long in the first direction (X) and the second direction (Y).

The first cleaning liquid supply structure 340 may be movably coupled to the swing body 320 using the first guide rail 340GL. The first nozzle arm 341 may be moved in the second direction (Y) along the first guide rail 340GL. The first nozzle arm 341 may be movably coupled to the swing body 320.

The second cleaning liquid supply structure 350 may be movably coupled to the swing body 320 using the second guide rail 350GL. The second nozzle arm 351 may be moved in the first direction (X) along the second guide rail 350GL. The second nozzle arm 351 may be movably coupled to the swing body 320.

Unlike shown, only one of the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 may be movably coupled to the swing body 320.

11 is a cross-sectional view of substrate cleaning equipment according to some embodiments. FIG. 12 is a diagram illustrating the substrate, head portion, swing body, and first and third cleaning liquid supply structures of FIG. 11. For convenience of explanation, the description will focus on differences from those described using FIGS. 3 to 8.

Referring to FIGS. 11 and 12 , the substrate cleaning equipment 125B according to some embodiments includes a first cleaning liquid supply structure 340 coupled to the swing body 320, and a first cleaning liquid supply structure 340 fixed to the inner wall of the housing 301. 3 It may include a cleaning liquid supply structure 360.

The third cleaning liquid supply structure 360 may spray the third cleaning liquid onto the main surface 100a of the substrate. The third cleaning liquid may include a chemical solution. The third cleaning liquid supply structure 360 may be connected to a flow transfer source that supplies the third cleaning liquid.

13 is a diagram for explaining substrate cleaning equipment according to some embodiments. For convenience of explanation, the description will focus on differences from those described using FIGS. 3 to 8.

For reference, FIG. 13 is a diagram for explaining the coupling relationship between the cleaning liquid supply structure and the swing body.

Referring to FIG. 13 , in the substrate cleaning equipment according to some embodiments, the first nozzle arm 341 may rotate based on the point where the first nozzle arm 341 and the swing body 320 are coupled.

The second nozzle arm 351 may rotate based on the point where the second nozzle arm 351 and the swing body 320 are coupled.

As the nozzle arm rotates, if the distance between the outer periphery of the pad attachment surface 330s and the cleaning liquid supply nozzle is outside the appropriate range, the length of the nozzle arm is extended, so that the outer periphery of the pad attachment surface 330s and the cleaning liquid supply nozzle The distance between them can be kept within an appropriate range.

Unlike what is shown, only one of the first nozzle arm 341 and the second nozzle arm 351 can rotate based on the point where it is coupled to the swing body 320. Alternatively, only one of the first nozzle arm 341 and the second nozzle arm 351 may extend in the longitudinal direction of the nozzle arm.

Figure 14 is a cross-sectional view of a substrate cleaning equipment according to some embodiments. FIG. 15 is a diagram illustrating the substrate, head portion, swing body, and first to third cleaning liquid supply structures of FIG. 14. For convenience of explanation, the description will focus on differences from those described using FIGS. 3 to 8.

Referring to FIGS. 14 and 15 , the substrate cleaning equipment 125B according to some embodiments may further include a third cleaning liquid supply structure 360 fixed to the inner wall of the housing 301.

The third cleaning liquid supply structure 360 may spray the third cleaning liquid onto the main surface 100a of the substrate. In addition to the first cleaning liquid sprayed by the first cleaning liquid supply structure 340 and the second cleaning liquid sprayed by the second cleaning liquid supply structure 350, an additional third cleaning liquid is sprayed on the main surface 100a of the substrate. Removal of particles adsorbed on the surface 100a can be made easier.

16 to 18 are diagrams for explaining substrate cleaning equipment according to some embodiments. For convenience of explanation, the description will focus on differences from those described using FIGS. 3 to 8.

For reference, FIG. 16 is a diagram for explaining the operation of the substrate cleaning equipment when the substrate rotates counterclockwise. Figure 17 is a diagram for explaining the operation of the substrate cleaning equipment when the substrate rotates clockwise. Figure 18 is a diagram for explaining the arrangement of the cleaning liquid supply structure.

Referring to FIGS. 5 and 16 to 18 , the substrate cleaning equipment 125B according to some embodiments may further include a fourth cleaning liquid supply structure 370 coupled to the swing body 320.

The fourth cleaning liquid supply structure 370 that sprays the fourth cleaning liquid 370L may be disposed in an area where the YY axis has a negative value in the XX-YY plane.

The first cleaning liquid supply structure 340 is disposed on a sweep line, and the second cleaning liquid supply structure 350 and the fourth cleaning liquid supply structure 370 face each other with the buffing pad 335 in between. You can. In other words, the second cleaning liquid supply structure 350 and the fourth cleaning liquid supply structure 370 may face each other with the head portion 330 interposed therebetween.

In Figure 16, the substrate 100 can rotate counterclockwise. When the substrate 100 rotates counterclockwise, most of the first cleaning liquid 340L moves in the first cleaning liquid flow direction 340LF toward the edge of the substrate 100. Additionally, most of the second cleaning liquid 350L moves in the second cleaning liquid flow direction 350LF toward the edge of the substrate 100.

Meanwhile, when the fourth cleaning liquid 370L is sprayed onto the main surface 100a of the substrate from the fourth cleaning liquid supply structure 370, the fourth cleaning liquid 370L may be collected at the center of the substrate 100.

Accordingly, when the substrate 100 rotates counterclockwise, the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 are activated, so that the first cleaning liquid 340L and the second cleaning liquid 350L This can be sprayed onto the main surface 100a of the substrate. On the other hand, the fourth cleaning liquid supply structure 370 can be deactivated to prevent the fourth cleaning liquid 370L from being sprayed on the main surface 100a of the substrate.

In FIG. 16 , the first cleaning liquid 340L and the second cleaning liquid 350L are hatched, indicating that the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 are activated.

In Figure 17, the substrate 100 can rotate clockwise. When the substrate 100 rotates clockwise, most of the first cleaning liquid 340L moves in the first cleaning liquid flow direction 340LF toward the edge of the substrate 100. Additionally, most of the fourth cleaning liquid 370L moves in the fourth cleaning liquid flow direction 370LF toward the edge of the substrate 100.

Meanwhile, when the second cleaning liquid 350L is sprayed onto the main surface 100a of the substrate from the second cleaning liquid supply structure 350, the second cleaning liquid 350L may be collected at the center of the substrate 100.

Therefore, when the substrate 100 rotates clockwise, the first cleaning liquid supply structure 340 and the fourth cleaning liquid supply structure 370 are activated, so that the first cleaning liquid 340L and the fourth cleaning liquid 370L are activated. It can be sprayed on the main surface 100a of the substrate. On the other hand, the second cleaning liquid supply structure 350 can be deactivated to prevent the second cleaning liquid 350L from being sprayed on the main surface 100a of the substrate.

In FIG. 17 , the first cleaning liquid 340L and the fourth cleaning liquid 370L are hatched, indicating that the first cleaning liquid supply structure 340 and the fourth cleaning liquid supply structure 370 are activated.

Depending on the rotation direction of the substrate 100, one of the second cleaning liquid supply structure 350 and the fourth cleaning liquid supply structure 370 may spray the cleaning liquid, and the other may not spray the cleaning liquid.

19 to 22 are diagrams for explaining substrate cleaning equipment according to some embodiments. For convenience of explanation, the description will focus on differences from those described using FIGS. 3 to 8.

For reference, FIG. 19 is a diagram for explaining the operation of the substrate cleaning equipment when the swing body 320 moves from one side with respect to the substrate center line (WCL). FIG. 21 is a diagram for explaining the operation of the substrate cleaning equipment when the swing body 320 moves from the other side with respect to the substrate center line (WCL). Figures 20 and 22 are diagrams for explaining the arrangement of the cleaning liquid supply structure, respectively.

5 and 19 to 22, the substrate cleaning equipment 125B according to some embodiments includes a fourth cleaning liquid supply structure 370 and a fifth cleaning liquid supply structure 380 coupled to the swing body 320. It may further include.

The fourth cleaning liquid supply structure 370 that sprays the fourth cleaning liquid 370L may be disposed in an area where the YY axis has a negative value in the XX-YY plane. The fifth cleaning liquid supply structure 380 that sprays the fifth cleaning liquid 380L may be disposed in an area where the XX axis has a negative value in the XX-YY plane.

The first cleaning liquid supply structure 340 and the fifth cleaning liquid supply structure 380 may be disposed on a sweep line (SWEEP LINE). The first cleaning liquid supply structure 340 and the fifth cleaning liquid supply structure 380 may face each other with the buffing pad 335 interposed therebetween. The second cleaning liquid supply structure 350 and the fourth cleaning liquid supply structure 370 may face each other with the buffing pad 335 interposed therebetween.

In other words, the first cleaning liquid supply structure 340 and the fifth cleaning liquid supply structure 380 face each other with the head portion 330 in between, and the second cleaning liquid supply structure 350 and the fourth cleaning liquid supply structure ( 370) may face each other with the head portion 330 in between.

When the substrate cleaning equipment 125B operates and the buffing pad 335 moves along the sweep line, the center of the buffing pad 335, that is, the center of the head portion 330, is aligned with the substrate center line (WCL). You can pass. While the buffing pad 335 moves along the sweep line (SWEEP LINE), the buffing pad 335 passes through the first substrate edge line (WEL1) and the substrate center line (WCL), and passes through the second substrate edge line (WEL2). can also pass.

For example, the movement of the swing body 320 moving along the sweep line will proceed from one side (R1) to the other side (R2) based on the center of the substrate 100, that is, the center line (WCL) of the substrate. You can.

The substrate 100 can rotate counterclockwise.

19 and 20, when the swing body 320 moves on one side R1 of the substrate 100, most of the first cleaning fluid 340L flows toward the edge of the substrate 100. It moves in the direction (340LF). Additionally, most of the second cleaning liquid 350L moves in the second cleaning liquid flow direction 350LF toward the edge of the substrate 100.

Meanwhile, when the fourth cleaning liquid 370L is sprayed onto the main surface 100a of the substrate from the fourth cleaning liquid supply structure 370, the fourth cleaning liquid 370L may be collected at the center of the substrate 100. Additionally, when the fifth cleaning liquid 380L is sprayed onto the main surface 100a of the substrate from the fifth cleaning liquid supply structure 380, the fifth cleaning liquid 380L may be collected at the center of the substrate 100.

Therefore, when the swing body 320 moves on one side R1 of the substrate 100, the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 are activated, thereby first cleaning liquid 340L. ) and the second cleaning liquid 350L can be sprayed on the main surface 100a of the substrate. On the other hand, the fourth cleaning liquid supply structure 370 and the fifth cleaning liquid supply structure 380 are deactivated to prevent the fourth cleaning liquid 370L and the fifth cleaning liquid 380L from being sprayed on the main surface 100a of the substrate. You can.

In FIG. 19 , the first cleaning liquid 340L and the second cleaning liquid 350L are hatched, indicating that the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 are activated.

21 and 22, when the swing body 320 moves on the other side R2 of the substrate 100, most of the fourth cleaning fluid 370L flows toward the edge of the substrate 100. It moves in the direction (340LF). Additionally, most of the fifth cleaning liquid 380L moves in the fifth cleaning liquid flow direction 380LF toward the edge of the substrate 100.

Meanwhile, when the first cleaning liquid 340L is sprayed onto the main surface 100a of the substrate from the first cleaning liquid supply structure 340, the first cleaning liquid 340L may be collected at the center of the substrate 100. Additionally, when the second cleaning liquid 350L is sprayed onto the main surface 100a of the substrate from the second cleaning liquid supply structure 350, the second cleaning liquid 350L may be collected at the center of the substrate 100.

Therefore, when the swing body 320 moves on the other side R2 of the substrate 100, the fourth cleaning liquid supply structure 370 and the fifth cleaning liquid supply structure 380 are activated, thereby causing the fourth cleaning liquid 370L. ) and the fifth cleaning liquid 380L can be sprayed on the main surface 100a of the substrate. On the other hand, the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 are deactivated to prevent the first cleaning liquid 340L and the second cleaning liquid 350L from being sprayed on the main surface 100a of the substrate. You can.

In FIG. 21 , the fourth cleaning liquid 370L and the fifth cleaning liquid 380L are hatched, indicating that the fourth cleaning liquid supply structure 370 and the fifth cleaning liquid supply structure 380 are activated.

23 and 24 are diagrams for explaining substrate cleaning equipment according to some embodiments. For convenience of explanation, the description will focus on differences from those described using FIGS. 3 to 8.

23 and 24, in the substrate cleaning equipment according to some embodiments, the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 face each other with a sweep line (SWEEP LINE) between them. Can be positioned to view.

A connection line passing through the first cleaning liquid supply structure 340 and the second cleaning liquid supply structure 350 may be defined. The connection line is shown parallel to the substrate center line (WCL), but this is only for convenience of explanation and is not limited thereto.

A sweep line may include an intersection point (CP) that intersects a connection line.

While the swing body 320 moves from the first point P1 toward the second point P2, the distance from the first substrate edge line WEL1 to the intersection point CP is from the first substrate edge line WEL1. It is greater than the distance to the center of the head portion 330.

In other words, the distance from the point where the first substrate edge line (WEL1) meets the substrate 100 to the intersection point (CP) is the head portion 330 from the point where the first substrate edge line (WEL1) meets the substrate 100. is greater than the distance to the center of .

25 is a flowchart illustrating a method of manufacturing a semiconductor device using substrate cleaning equipment according to some embodiments.

Referring to FIG. 25, the main surface of the substrate (100a in FIG. 3) may be planarized through a chemical mechanical planarization (CMP) process (S100).

A chemical mechanical planarization (CMP) process may be performed using chemical mechanical planarization equipment 110 of FIG. 1 .

Next, the main surface 100a of the flattened substrate may be cleaned using substrate cleaning equipment (125B in FIG. 2) (S200).

The substrate cleaning equipment 125B may be one of the substrate cleaning equipment described using FIGS. 3 to 24 .

Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention can be implemented in other specific forms without changing its technical idea or essential features. You will be able to understand it. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive.

110: Chemical mechanical planarization equipment 125B: Substrate cleaning equipment
340, 350, 360, 370, 380: Cleaning liquid supply structure

Claims (20)

a substrate holder configured to support a substrate;
a swing body moving along a sweep line on the main surface of the substrate;
A head portion coupled to the swing body and including a pad attachment surface facing the substrate holder, the pad attachment surface to which a buffing pad is attached;
a first cleaning liquid supply structure coupled to the swing body and spraying a first cleaning liquid on the main surface of the substrate; and
and a second cleaning liquid supply structure that sprays a second cleaning liquid on the main surface of the substrate,
The first cleaning liquid supply structure includes a first nozzle arm movably coupled to the swing body, and a first cleaning liquid supply nozzle coupled to the first nozzle arm,
The second cleaning liquid supply structure includes a second nozzle arm movably coupled to the swing body, and a second cleaning liquid supply nozzle coupled with the second nozzle arm,
The first nozzle arm is movable in a first direction on the swing body,
The second nozzle arm is movable in a second direction different from the first direction on the swing body,
Substrate cleaning equipment in which the rotation direction of the substrate is the same as the rotation direction of the buffing pad. According to claim 1,
The swing body further includes a guide rail extending long in one direction,
The first nozzle arm is a substrate cleaning equipment that moves along the guide rail. According to claim 1,
The first cleaning liquid supply nozzle is a substrate cleaning equipment rotatably coupled to the first nozzle arm. delete delete delete According to claim 1,
The substrate rotates counterclockwise, and the swing body passes a first point and a second point on the sweep line,
the sweep line is the X axis, the Y axis is perpendicular to the X axis, and the XY plane is parallel to the major surface of the substrate,
When the direction from the first point to the second point is the positive direction of the ,
The first cleaning liquid supply structure and the second cleaning liquid supply structure are each located in a region where the X-axis has a positive value, or a region where the Y-axis value of the XY plane has a positive value. According to clause 7,
A first line passing through the center of the pad attachment surface and the first cleaning liquid supply structure is perpendicular to a second line passing through the center of the pad attachment surface and the second cleaning liquid supply structure. According to claim 1,
Further comprising a housing for accommodating the substrate holder,
The second cleaning liquid supply structure is a substrate cleaning equipment fixed to the inner wall of the housing. According to claim 1,
A substrate cleaning equipment wherein the center of the head portion passes through the center of the substrate while the buffing pad moves along the sweep line and cleans the main surface of the substrate. a substrate holder configured to support a substrate;
a swing body moving along a sweep line on the main surface of the substrate;
A head portion coupled to the swing body and including a pad attachment surface facing the substrate holder, the pad attachment surface to which a buffing pad is attached;
a first cleaning solution supply structure coupled to the swing body and spraying a first cleaning solution on the main surface of the substrate; and
A second cleaning liquid supply structure coupled to the swing body and spraying a second cleaning liquid on the main surface of the substrate,
The first cleaning liquid supply structure is movable in a first direction on the swing body,
The second cleaning liquid supply structure is a substrate cleaning equipment capable of moving in a second direction different from the first direction on the swing body. According to claim 11,
The first cleaning liquid supply structure is a substrate cleaning equipment including a first nozzle arm movably coupled to the swing body, and a first cleaning liquid supply nozzle coupled with the first nozzle arm. According to claim 12,
The swing body further includes a guide rail extending long in one direction,
The first nozzle arm is a substrate cleaning equipment that moves along the guide rail. According to claim 12,
The second cleaning liquid supply structure is a substrate cleaning equipment including a second nozzle arm movably coupled to the swing body and a second cleaning liquid supply nozzle coupled to the second nozzle arm. According to claim 11,
a third cleaning liquid supply structure coupled to the swing body and spraying a third cleaning liquid on the main surface of the substrate;
It further includes a fourth cleaning liquid supply structure coupled to the swing body and spraying the fourth cleaning liquid on the main surface of the substrate,
The first cleaning liquid supply structure and the third cleaning liquid supply structure are located along the sweep line with the head part interposed between them,
The second cleaning liquid supply structure and the fourth cleaning liquid supply structure are substrate cleaning equipment located on one side and the other side of the sweep line with the head part interposed therebetween. According to claim 15,
When the movement of the swing body along the sweep line proceeds from one side with respect to the center of the substrate,
The first cleaning liquid supply structure and the second cleaning liquid supply structure each spray cleaning liquid, and the third cleaning liquid supply structure and the fourth cleaning liquid supply structure each do not spray cleaning liquid,
When the movement of the swing body moving along the sweep line passes through the center of the substrate and proceeds from the other side based on the center of the substrate,
The third cleaning liquid supply structure and the fourth cleaning liquid supply structure each spray a cleaning liquid, and the first cleaning liquid supply structure and the second cleaning liquid supply structure each do not spray a cleaning liquid. A substrate processing system for processing a substrate, comprising:
Chemical mechanical planarization (CMP) equipment; and
a substrate cleaning equipment adapted to receive the substrate after the major surface of the substrate has been planarized in the CMP equipment;
The substrate cleaning equipment,
a substrate holder configured to support the substrate;
a swing body moving along a sweep line on the main surface of the substrate;
A head portion coupled to the swing body and including a pad attachment surface facing the substrate holder, the pad attachment surface to which a buffing pad is attached;
a first cleaning solution supply structure coupled to the swing body and spraying a first cleaning solution on the main surface of the substrate; and
and a second cleaning liquid supply structure that sprays a second cleaning liquid on the main surface of the substrate,
The first cleaning liquid supply structure includes a first nozzle arm movably coupled to the swing body, and a first cleaning liquid supply nozzle coupled with the first nozzle arm,
The second cleaning liquid supply structure includes a second nozzle arm movably coupled to the swing body, and a second cleaning liquid supply nozzle coupled to the second nozzle arm,
The first nozzle arm is movable in a first direction on the swing body,
The second nozzle arm is capable of moving in a second direction different from the first direction on the swing body. delete delete According to claim 17,
A substrate processing system wherein the center of the head portion passes through the center of the substrate while the buffing pad moves along the sweep line and cleans a major surface of the substrate.

Images