KR102642469B1 - Metal thin film deposition method using organometallic precursor - Google Patents

Abstract

The present invention relates to a method for depositing a metal thin film using an organometallic precursor, and specifically, a cyclic chemical vapor deposition (cyclic CVD) method including a thin film forming step using a precursor containing an organic metal, and a thin film deposition post-treatment step. ) relates to a method of depositing a metal thin film using an organometallic precursor.

Description

Metal thin film deposition method using organometallic precursor}

The present invention relates to a method for depositing a metal thin film using an organometallic precursor, and specifically, a cyclic chemical vapor deposition (cyclic CVD) method including a thin film forming step using a precursor containing an organic metal, and a thin film deposition post-treatment step. ) relates to a method of depositing a metal thin film using an organometallic precursor.

As semiconductor memory devices become more highly integrated, the size of memory cells is being reduced, and precious metals such as ruthenium, iridium, and platinum are being considered as electrode materials for memory devices.

As a method of manufacturing a metal-containing thin film having the above characteristics, the CVD (Chemical Vapor Deposition) method or the ALD method is widely used.

In particular, in the case of ruthenium as a metal, ruthenium thin films formed from precursors and deposition processes such as CVD can be used as an adhesion layer for a copper diffusion barrier (TiN/TaN) layer, a diffusion barrier layer, and Cu electrochemical plating (ECP). It is desirable as a seed layer for.

However, it is not easy to control the thickness and film quality of metal thin films such as ruthenium in the CVD method compared to the ALD method. That is, deposition of metals such as ruthenium by CVD may include limitations such as low deposition rate, poor step coverage, large resistivity, and poor adhesion to barrier layers.

Accordingly, the CVD method uses oxygen gas as a reaction gas along with a metal-containing precursor such as ruthenium to form an oxidizing compound necessary for successful deposition of metals such as ruthenium on a substrate (Patent Document 1). However, these oxidizing agents are causative agents that can cause oxidative damage to the underlying nitride film.

In addition, in recognition of the problems of the oxidizing agent as described above, Patent Document 2 uses a reducing agent such as hydrogen and ammonia along with a ruthenium precursor instead of the oxidizing agent to form a ruthenium thin film by a CVD method. However, in Patent Document 2, oxygen is used after forming the ruthenium thin film to increase the deposition rate of the ruthenium thin film.

However, the use of oxygen inevitably results in the incorporation of ruthenium oxide, which has a higher resistivity than metallic ruthenium, and thus may increase the resistivity of the formed ruthenium thin film. In addition, the production of oxygen atoms due to the use of oxygen may cause oxidation damage to the underlying nitride film, which is a disadvantage of using the oxidizing agent in Patent Document 1.

Therefore, there is a greater need for the development of a new metal thin film manufacturing technology, such as ruthenium, that can solve the above problems in the manufacturing of metal-containing thin films, such as ruthenium, which exhibit various advantages in manufacturing semiconductor memory devices.

KR10-0982109 (2010.09.14. Notice) KR10-2021-0058986 (published on May 24, 2021)

Therefore, the purpose of the present invention is to solve such conventional problems, and in the CVD deposition process using an organometallic precursor that has many variables in the deposition process, the thickness and resistivity of the film are improved by controlling impurities such as carbon, oxygen, and nitrogen. The goal is to provide a metal thin film deposition method that can form a metal thin film with significant reduction and excellent film quality.

The problem to be solved by the present invention is not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

For the above purpose, the metal thin film deposition method using the organometallic compound precursor of the present invention includes a substrate preparation step; Substrate input step; substrate stabilization step; Thin film deposition step using an organometallic compound precursor; and a thin film deposition post-processing step.

The substrate preparation step is a step in which necessary preparation processes are performed before the substrate is placed in the reaction vessel. It may be a process of cleaning the substrate or preparing the surface of the substrate to a desired state. This process includes removing organic substances on the substrate. It may include wet or dry cleaning processes, and wet and dry etching processes to remove oxides on the surface of the substrate.

The substrate in the substrate preparation step may be a substrate commonly used in the industry, such as a sapphire substrate, a silicon substrate, a gallium arsenide substrate, a quartz substrate, or a glass substrate.

In the substrate loading step, when the substrate is introduced into the reaction vessel, the substrate is loaded into the loading vessel to minimize changes in the pressure environment of the reaction vessel, a pressure environment similar to that of the reaction vessel is created in the loading vessel, and then the substrate is transferred from the loading vessel to the reaction vessel. This is the input stage.

The substrate stabilization step is a step for raising the temperature of the substrate to the process temperature by heat diffusion after the substrate is input from the loading container to the reaction container.

The thin film deposition step is a step in which a metal thin film is formed using an organometallic compound precursor on the substrate on which the substrate stabilization step has been performed.

The thin film deposition step includes a precursor compound injection step and a reaction gas injection step, and the injection of the precursor compound and the reaction gas may be performed simultaneously or in the above order.

The precursor compound is an organometallic compound precursor and may be a cyclopentadienyl (Cp, Cyclopentadienyl) ligand-based compound.

In the precursor injection step, a carrier gas may also be used along with the precursor injection, if necessary. The carrier gas may be an inert gas such as argon, helium, etc., or a mixture thereof.

The reaction gas may be a material containing nitrogen atoms, including N2; NH3; alkyl or amino compounds; alkyl or aryl imino compounds; hydrazine; cyclic alkyl; Aryl amino compounds; Or it may be a mixture thereof.

The thin film deposition post-treatment step is a step for removing impurities such as carbon, oxygen, and nitrogen in the thin film formed in the thin film deposition step, and is a step of exposing the thin film to a material containing nitrogen atoms. The material containing the nitrogen atom is N2; NH3; alkyl or amino compounds; alkyl or aryl imino compounds; hydrazine; cyclic alkyl; Aryl amino compounds; Or it may be a mixture thereof.

The thickness and resistivity of the thin film can be adjusted by the thin film deposition post-processing step.

The thin film deposition step; and the thin film deposition post-processing step; the processing time ratio may be greater than 1:1 and 1:20.

The thin film deposition step; and the thin film deposition post-processing step; is referred to as one thin film deposition unit, and the thin film deposition unit may be performed one or more times.

As seen above, the thickness of the metal thin film formed by the metal thin film deposition method of the present invention is 100 Å or less, and the resistivity of the thin film may be 25 μΩ*cm or less.

The present invention further includes a thin film deposition post-treatment step after the formation of the thin film deposition in the thin film formation process using an organometallic compound precursor, thereby controlling the thin film thickness in the deposition process while using an organometallic compound precursor that has many variables in deposition. , which has the advantage of lowering the resistivity of the thin film.

1 is a process flow diagram of a thin film deposition method using an organometallic compound precursor according to the present invention.
Figure 2 is a TEM photo of a thin film formed in Example 1 of the present invention (thin film deposition step: processing time ratio of the thin film deposition post-treatment step 1:4).
Figure 3 is a TEM photo of a thin film formed in Example 2 of the present invention (thin film deposition step: processing time ratio of the thin film deposition post-treatment step 1:8).
Figure 4 is a TEM photograph of the thin film formed in Comparative Example 1.
Figure 5 is a TEM photo of the thin film formed in Comparative Example 2.
Figure 6 is a schematic diagram showing the process sequence of cyclic CVD of the present invention and thermal CVD of Comparative Example 1.
Figure 7 is a graph showing the contents of ruthenium, carbon, oxygen, and nitrogen components contained in thin films according to Comparative Examples 1 and 2 and Example 2 of the present invention.
Figure 8 is a graph showing the crystallinity of thin films formed by Comparative Examples 1 and 2, and Example 2 of the present invention.
Figure 9 is a TEM showing a thin film formed in the opening pattern in the substrate formed by Comparative Examples 1 and 2, and Example 2 of the present invention.

Hereinafter, the present invention will be described with reference to preferred embodiments and drawings so that those skilled in the art can easily implement it. Additionally, in describing the present invention, if it is determined that a detailed description of a related known function or known configuration may unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

Since the present invention can be modified in various ways and can have various embodiments, specific embodiments will be exemplified and explained in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, and should be understood to include all transformations, equivalents, and substitutes included in the spirit and technical scope of the present invention. Additionally, throughout the specification, when a part is said to “include” a certain element, this means that, unless specifically stated to the contrary, it does not exclude other elements but may further include other elements.

The terms used in the present invention are only used to describe specific embodiments and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In the present invention, terms such as include or have are intended to designate the presence of features, numbers, steps, operations, components, parts, or a combination thereof described in the specification, but are intended to indicate the presence of one or more other features, numbers, or steps. , it should be understood that it does not exclude in advance the possibility of the presence or addition of operations, components, parts, or combinations thereof.

In the following, the present invention is described in detail with reference to the drawings.

1 is a process flow diagram of a thin film deposition method using an organometallic compound precursor according to the present invention.

As shown in the process flow diagram of FIG. 1, the thin film deposition method using the organometallic compound precursor of the present invention includes a substrate preparation step; Substrate input step; substrate stabilization step; It includes a thin film deposition step using an organometallic compound precursor: and a thin film deposition post-treatment step, and each of the above steps is performed sequentially as follows.

Looking at each of the above steps in detail,

The substrate preparation step is a step in which necessary preparation processes are performed before the substrate is input into the reaction vessel, and may include cleaning the substrate or preparing the substrate surface to a desired state. In particular, this process may include a wet or dry organic cleaning process to remove organic substances on the substrate, and a wet and dry etching process to remove oxides on the surface of the substrate. The wet and dry cleaning to remove organic substances and the wet and dry etching to remove oxides may be methods known in the art.

The substrate in the substrate preparation step may be a substrate commonly used in the industry, such as a sapphire substrate, a silicon substrate, a gallium arsenide substrate, a quartz substrate, or a glass substrate.

The substrate input step is a step in which the substrate is loaded into the loading container to minimize changes in the pressure environment of the reaction container, a pressure environment similar to that of the reaction container is created in the loading container, and then the substrate is introduced.

The pressure of the reaction vessel may be 10 Torr or less, and is preferably 8 Torr or less.

The substrate stabilization step is a step for increasing the substrate temperature to the process temperature through heat diffusion after the substrate is introduced from the loading container into the reaction container.

The process temperature is 350°C to 500°C, preferably 400°C to 450°C. If the temperature is outside the above range, the reaction between the precursor compound and the substrate may be insufficient, or the precursor compound itself may be deformed due to the high temperature in the high-pressure reaction vessel, making thin film formation difficult.

In the substrate stabilization step, an inert gas may be used, and the inert gas may be provided at about 100 to about 1000 sccm, preferably about 300 to about 700 sccm.

The thin film deposition step is a step in which a metal thin film is formed using an organometallic compound precursor on the substrate on which the substrate stabilization step has been performed.

Specifically, the thin film deposition step includes: an organometallic compound precursor on the pretreated substrate; and reaction gas; is added to form a metal thin film.

The organometallic compound precursor is a cyclopentadienyl (Cp, Cyclopentadienyl) ligand-based compound, and the metals in the compounds are Ru, Ti, Zr, Hf, Nb, Ta, Mo, W, Cr, Co, Ni, and Pd. , Pt, Cu, Al, Ga, In, Si, Ge, Sn, P, As, or Sb. Preferably it may be Ru.

Specifically, the organometallic compound precursor may be a compound represented by the following formula (1). In the following formula (1), R1 to R5 are each a straight or branched alkyl group having 1 to 4 carbon atoms or hydrogen, and R6 and R7 are each a straight or branched alkyl group having 1 to 4 carbon atoms.

Preferably, among R1 to R5 in the following formula (1), R1 and R3 are straight-chain or branched alkyl groups having 1 to 4 carbon atoms, the remaining R2, R4, and R5 are hydrogen, and R6 and R7 are each straight-chain alkyl groups having 1 to 4 carbon atoms. Or it is a branched alkyl group.

A more preferred compound of Formula 1 is a compound in which R1 and R3 are ethyl groups, R2, R4, and R5 are hydrogen, and R6 and R7 are methyl groups, as shown in Formula 2 below.

Formula 1 Formula 2

In Formulas 1 and 2, the metal (M) is Ru, Ti, Zr, Hf, Nb, Ta, Mo, W, Cr, Co, Ni, Pd, Pt, Cu, Al, Ga, In, Si, Ge, Sn. , P, As, or Sb. Preferably it may be Ru.

Each of the above precursors may be in liquid form or may be used in gaseous form.

The precursor is injected in vapor form as the precursor container is heated.

The amount of precursor injected from the precursor container may be determined depending on the thickness of the required thin film and the thin film deposition unit.

For injection of the precursor compound, a carrier gas may be used as needed. The carrier gas may be an inert gas such as argon, helium, etc., or a mixture thereof.

The amount of carrier gas used is 100 to 50,000 times (by volume) the amount of precursor used.

The carrier gas may be provided at about 10 to about 1000 sccm, preferably at 10 to 500 sccm.

The precursor may be delivered to the chamber at about 0.0001 to about 50 sccm.

The reaction gas is a compound containing a nitrogen functional group.

Compounds containing the nitrogen functional group include N ₂ ; NH ₃ ; hydrazine; alkylamino compounds; Alkylimino compounds; cyclic alkylamino compounds; Aryl amino compounds; Aryl imino compounds; Or it may be a mixture thereof.

For example, the alkyl or aryl amino compounds include N(CH ₃ ) ₂ , N(C ₂ H ₅ ) ₂ , N(C ₃ H ₇ ) ₂ , N(C4H9) ₂ , N(CH ₃ )(C ₂ H ₅ ), isomers thereof, derivatives thereof, or combinations thereof. The above alkylimino compounds; cyclic alkylamino compounds; Aryl amino compounds; And the aryl imino compound may be a known compound known in the art.

The reaction gas may be delivered to the chamber at 100 to 10,000 sccm.

The substrate temperature in the thin film deposition step is about 300 to about 500°C, preferably about 400°C to 450°C. The pressure within the chamber may range from about 1 to about 10 Torr, preferably from about 1 to about 8 Torr.

The thin film deposition post-treatment step is a step for removing impurities such as carbon, oxygen, and nitrogen in the thin film formed in the thin film deposition step, and is a step of exposing the thin film to a material containing nitrogen atoms.

The material containing the nitrogen atom is N2; NH3; alkyl or amino compounds; alkyl or aryl imino compounds; hydrazine; cyclic alkyl; Aryl amino compounds; Or it may be a mixture thereof.

In the thin film deposition post-processing step, the amount of material containing nitrogen atoms may be delivered to the chamber at 100 to 10,000 sccm. Preferably, the amount of the material containing nitrogen atoms used in the thin film deposition post-processing step may be used in the same amount as the amount of reaction gas used in the thin film deposition step.

The thin film deposition step; and the thin film deposition post-processing step; the processing time ratio may be greater than 1:1 and 1:20.

The thickness, resistivity, and crystallinity of the thin film formed in the thin film deposition step can be adjusted by the thin film deposition post-processing step.

The thin film deposition step; and the thin film deposition post-processing step; is referred to as one thin film deposition unit, and the thin film deposition unit may be performed one or more times.

As seen above, the thickness of the metal thin film formed by the metal thin film deposition method of the present invention is 100 Å or less, and the resistivity of the thin film may be 25 μΩ*cm or less.

The thin film deposition method using the organometallic compound precursor of the present invention as described above includes a thin film forming step; and a thin film formation post-treatment step; by including this, the thickness, resistivity, and crystallinity of the formed thin film can be adjusted.

The sequence (deposition process) of cyclic CVD, a thin film deposition method using the organometallic compound precursor of the present invention as described above, and the sequence (deposition process) of thermal CVD, a conventional technology, are schematically shown in FIG. 6.

The metal thin film formed by the thin film deposition method of the present invention can be deposited with superior advantages in resistivity, adhesion, deposition rate, or step coverage compared to the thin film formed by the conventional thermal CVD method. There will be.

The metal thin film formed according to the present invention may be formed on interconnect structures such as vias, trenches, etc., and the metal thin film may be formed on interconnect structures such as dynamic random access memory (DRAM), or capacitor electrodes, etc. However, it is not limited thereto) and may be part of a larger device.

Specifically, the thin film deposition method of the present invention can be applied on a substrate having an opening as shown in FIG. 9. The opening may be any opening such as a via, trench, or dual damascene structure, etc. The filling material for the opening may be a conductive material, and deposition may be accomplished by a conventional method.

Before forming the metal thin film in the opening, the side walls and bottom surface where the metal thin film is formed may be covered with one or two or more layers. The layers may be conventional material layers in the art, and the thickness of the layers may also have a thickness according to the needs of the art.

In the following, the present invention will be described using specific examples.

Example 1

The organic metal precursor used for thin film deposition was (2,4-dimethyloxopentadienyl) (diethylcyclopentadienyl)Ru, and ammonia was used as a reaction gas. The precursor canister temperature was maintained at 74 degrees, and Ru thin film deposition was performed at a process pressure of 5 Torr.

For Ru thin film deposition, a piece of Si wafer containing 1000Å SiO ₂ was placed in the equipment and chemical vapor deposition (CVD) was performed.

Stabilize the wafer by supplying 500 sccm of Ar for 1 minute to sufficiently reach the substrate temperature (substrate stabilization step).

Ru thin film deposition was performed by simultaneously injecting the Ru precursor and the reaction gas, ammonia. In the case of Ru precursor, Ar is used as the carrier gas and 60 sccm is injected.

At this time, the amount of Ru precursor injected is 0.048 sccm, and the amount of ammonia, which is a reaction gas, is injected at 500 sccm. The deposition temperature of the substrate was 450°C (thin film deposition step).

After depositing the Ru thin film, ammonia gas was injected to remove impurities in the deposited Ru thin film. The ammonia gas was used at 500 sccm, and the process pressure at this time was 5 Torr.

The thin film deposition step and the thin film deposition post-processing step were performed repeatedly, and the ratio of the time of the thin film deposition step and the time of the thin film deposition post-processing step was 1:4. The execution time of the thin film deposition post-treatment step was 2.25 minutes (based on 1 cycle).

The thickness of the Ru thin film deposited in Example 1 was 86 Å, the specific resistance was 22 μΩ*cm, and the TEM of the thin film is shown in FIG. 2. The thin film thickness of Example 1 is the result of 210 cycles (see Figure 2).

Example 2

Example 2 was conducted in the same manner as Example 1, except that the ratio of the time of the thin film deposition step and the time of the thin film deposition post-processing step was 1:8. The execution time of the thin film deposition post-treatment step was 1.25 minutes (based on 1 cycle).

The thickness of the Ru thin film deposited in Example 2 was 82 Å, the specific resistance was 23 μΩ*cm, and the TEM of the thin film is shown in FIG. 3. The thin film thickness of Example 2 is the result of 210 cycles (see Figure 3).

Comparative Example 1

Comparative Example 1 was conducted in the same manner as Example 1, except that the ‘thin film deposition post-processing step’ was not performed.

The thickness of the Ru thin film deposited in Comparative Example 1 was 552 Å, the specific resistance was 30,000 μΩ*cm, and the TEM of the thin film is shown in FIG. 4 (see FIG. 4).

Comparative Example 2

Comparative Example 2 was conducted in the same manner as Example 1, except that the ratio of the time of the thin film deposition step and the time of the thin film deposition post-processing step was 1:1.

The thickness of the Ru thin film deposited in Comparative Example 2 was 128 Å, the specific resistance was 78 μΩ*cm, and the TEM of the thin film is shown in FIG. 5 (see FIG. 5).

Figure 1 below shows TEM images of the deposited thin films of Comparative Examples 1 and 2 and Examples 1 and 2.

Comparative Example 1 Comparative Example 2 Example 1 Example 2

<Figure 1>

As shown in Figure 1, Examples 1 and 2 of the thin film deposition method of the present invention have thin film thicknesses of 86 Å and 82 Å, which are less than 100 Å, while Comparative Examples 1 and 2 have thin film thicknesses of 552 Å and 128 Å, which exceed 100 Å. I'm doing it. In addition, in terms of the resistivity of the thin film, Examples 1 and 2 were 22μΩ*cm and 23μΩ*cm, which were less than 25μΩ*cm, while Comparative Examples 1 and 2 were 30,000μΩ*cm and 78μΩ*cm, which exceeded 25μΩ*cm.

Figure 2 below is a graph showing the amounts of carbon, oxygen, and nitrogen contained in the Ru thin film formed by Example 2, which is a metal thin film deposition method of the present invention, and Comparative Examples 1 and 2, which are prior art.

<Figure 2>

As shown in Figure 2, in the case of the Ru thin film according to Example 2 of the present invention, nitrogen is less than 5%, while in the case of Comparative Examples 1 and 2, which are conventional techniques, the nitrogen content is about 8 to 9.5, which is twice that of Example 2. It contains many impurities.

Accordingly, due to the decrease in impurities in the thin film, the grain size of the Ru thin film increases, thereby increasing the crystallinity of the thin film, and the resistivity of the thin film decreases as shown in Figure 1 above (Figure 3).

Comparative Example 1 Comparative Example 2 Example 2

<Figure 3>

In addition, the case of applying the Ru thin film according to Example 2 of the present invention and Comparative Examples 1 and 2 to the opening pattern of the substrate is shown in Figure 4 below.

Comparative Example 1 Comparative Example 2 Example 2

<Figure 4>

As shown in Figure 4, the step coverage of the Top/Middle portion of the pattern is 48% in Comparative Example 1 and 99% in Example 2, and the thin film forming method of the present invention is It shows that a thin film is formed with a uniform thickness throughout. The aspect ratio of the openings in the examples and comparative examples was 17:1.

From the results of these examples and comparative examples, the thin film formed in the thin film deposition step of the present invention is treated with a material containing nitrogen atoms in the thin film deposition post-treatment step to remove impurities in the deposited metal thin film, thereby improving the thickness, resistivity, and It can be seen that control of crystallinity is possible.

The metal thin film manufactured as described above can be used in the manufacture of semiconductor devices.

The scope of the present invention is not limited to the above-described embodiments, but may be implemented in various forms of embodiments within the scope of the appended claims. It is considered to be within the scope of the claims of the present invention to the extent that anyone skilled in the art can make modifications without departing from the gist of the invention as claimed in the claims.

Claims (15)

A method for depositing a metal thin film using an organometallic compound precursor, the method comprising:
Substrate preparation step; Substrate input step; substrate stabilization step; Thin film deposition step using an organometallic compound precursor; And a thin film deposition post-processing step;
The thin film deposition post-treatment step is a step for removing impurities such as carbon, oxygen, and nitrogen in the thin film formed in the thin film deposition step, and is a step of exposing it to a material containing nitrogen atoms,
A metal thin film deposition method using an organometallic compound precursor, wherein the organometallic compound precursor is a compound represented by the following formula (1):

Formula 1
(In Formula 1, R1 to R5 are each a straight-chain or branched alkyl group having 1 to 4 carbon atoms or hydrogen, R6 and R7 are each a straight-chain or branched alkyl group having 1 to 4 carbon atoms, and the metal (M) is Ru, Ti, Zr, Hf, Nb, Ta, Mo, W, Cr, Co, Ni, Pd, Pt, Cu, Al, Ga, In, Si, Ge, Sn, P, As, or Sb) According to paragraph 1,
The material containing the nitrogen atom is N2; NH3; alkyl or amino compounds; alkyl or aryl imino compounds; hydrazine; cyclic alkyl; Aryl amino compounds; Or a metal thin film deposition method using an organometallic compound precursor, characterized in that it is a mixture thereof. According to paragraph 1,
A metal thin film deposition method using an organometallic compound precursor, characterized in that the amount of material containing nitrogen atoms used in the thin film deposition post-treatment step is 100 to 10,000 sccm. According to paragraph 1,
The thin film deposition step; And the thin film deposition post-treatment step; a processing time ratio of more than 1:1 and 1:20, a metal thin film deposition method using an organometallic compound precursor. According to paragraph 1,
The substrate in the substrate preparation step is a sapphire substrate, a silicon substrate, a gallium arsenide substrate, a quartz substrate, or a glass substrate,
The substrate stabilization step is a step for raising the substrate temperature to the process temperature through heat diffusion using an inert gas after the substrate is introduced from the loading container into the reaction container. The pressure of the reaction container is 10 Torr or less, and the process temperature is 350°C to 500°C, and the inert gas is 100 to 1000 sccm,
The thin film deposition step includes: an organometallic compound precursor on the substrate on which the substrate stabilization step has been performed; A method of depositing a metal thin film using an organometallic compound precursor, characterized in that the metal thin film is formed by adding a reaction gas. According to paragraph 1,
The organometallic compound precursor is a cyclopentadienyl (Cp, Cyclopentadienyl) ligand-based compound, and the metals of the organometallic compound precursor are Ru, Ti, Zr, Hf, Nb, Ta, Mo, W, Cr, Co, and Ni. , Pd, Pt, Cu, Al, Ga, In, Si, Ge, Sn, P, As, or Sb. Metal thin film deposition method using an organometallic compound precursor. According to clause 6,
A metal thin film deposition method using an organometallic compound precursor, wherein the metal is Ru. delete According to paragraph 1,
A method of depositing a metal thin film using an organometallic compound precursor, wherein M in Formula 1 of the organometallic compound precursor is Ru. According to paragraph 1,
A metal thin film deposition method using an organometallic compound precursor, wherein the organometallic compound precursor is a compound represented by the following formula (2):

Formula 2 According to clause 10,
A metal thin film deposition method using an organometallic compound precursor, wherein M in Formula 2 of the organometallic compound precursor is Ru. According to paragraph 1,
A metal thin film deposition method using an organometallic compound precursor, wherein the organometallic compound precursor is in liquid or gas form. According to clause 5,
The reaction gas is a compound containing a nitrogen functional group,
The compound containing the nitrogen functional group is N ₂ ; NH ₃ ; hydrazine; alkylamino compounds; Alkylimino compounds; cyclic alkylamino compounds; Aryl amino compounds; Aryl imino compounds; Or a metal thin film deposition method using an organometallic compound precursor, characterized in that it is a mixture thereof. According to paragraph 1,
A metal thin film deposition method using an organometallic compound precursor, characterized in that the thickness of the metal thin film formed by the metal thin film deposition method is 100Å or less, and the resistivity of the thin film is 25μΩ*cm or less. The metal thin film manufactured by vapor deposition according to any one of claims 1 to 7 and 9 to 14 is a metal thin film characterized in that it is used for manufacturing a semiconductor device.