KR102634948B1 - Substrate processing system and substrate processing apparatus - Google Patents

Abstract

A substrate processing system according to the technical idea of the present invention includes manufacturing process equipment having a plurality of process chambers and a control server that controls the manufacturing process equipment, when transmitting a transfer order of a semiconductor substrate from the control server to the manufacturing process equipment, When a semiconductor substrate is defined as one process cycle from being introduced into the process chamber, performing a predetermined process, and being withdrawn, the control server performs the Nth process cycle (where N is a natural number) according to the first transfer order. When the ban is lifted for one or more of the at least one process chamber in which the entry of semiconductor substrates into the manufacturing process facility was prohibited, a change to the second transfer sequence from the N+1th process cycle is commanded immediately.

Description

Substrate processing system and substrate processing apparatus {SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING APPARATUS}

The technical field of the present invention relates to substrate processing systems and substrate processing devices, and more specifically, to substrate processing systems and substrate processing devices that control the transfer order of semiconductor substrates in a plurality of process chambers.

In a general semiconductor device manufacturing process, various processes, such as forming a material layer or etching a material layer on a semiconductor substrate, may be performed repeatedly. A substrate processing system that controls a plurality of process chambers is used in a substrate processing device that performs this process. Accordingly, in such a substrate processing system, it is required to efficiently control the transfer order for transferring semiconductor substrates between a plurality of process chambers and between load ports.

The problem to be solved by the technical idea of the present invention is to logically control the transfer order in the control server when a process chamber in which entry of a semiconductor substrate is prohibited is immediately used in a single wafer type facility having a plurality of process chambers, The goal is to improve the efficiency of the substrate processing system.

The problem to be solved by the technical idea of the present invention is to logically control the transfer order in the control server when a process chamber in which entry of a semiconductor substrate is prohibited is immediately used in a single wafer type facility having a plurality of process chambers, The goal is to improve the productivity of substrate processing equipment.

The problem to be solved by the technical idea of the present invention is not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

A substrate processing system according to the technical idea of the present invention includes manufacturing process equipment having a plurality of process chambers and a control server that controls the manufacturing process equipment, and transmits a transfer order of a semiconductor substrate from the control server to the manufacturing process equipment. In this case, when the period from when the semiconductor substrate is introduced into the process chamber, a predetermined process is performed, and it is withdrawn is defined as one process cycle, the control server operates at the Nth time in the first transfer order (where N is a natural number). ), starting from the N+1th process cycle, immediately upon the lifting of the ban on one or more of the at least one process chamber in which the entry of the semiconductor substrate was prohibited into the manufacturing process equipment performing the process cycle. Commands transition to the second transfer sequence.

A substrate processing apparatus according to the technical idea of the present invention includes a load port; Manufacturing process equipment having a plurality of process chambers; and a control server for controlling the manufacturing process equipment, wherein when a semiconductor substrate is introduced into the process chamber from the load port, a semiconductor process is performed, and the time until it returns to the load port is defined as one process cycle, the first Immediately when the ban on one or more of the at least one process chamber that was in a prohibited state from entering the semiconductor substrate into the manufacturing process equipment that performs the process cycle according to the transfer order is lifted, a new process cycle is started. Converts to transfer order.

A substrate processing apparatus according to the technical idea of the present invention includes a load port; A robot arm that transfers semiconductor substrates; Manufacturing process equipment having a plurality of process chambers; and a control server that controls the manufacturing process equipment, wherein the semiconductor substrate is introduced into the process chamber from the load port through the robot arm, the semiconductor process is performed, and the semiconductor substrate is returned to the load port. When defined as a process cycle, the control server divides the plurality of process chambers into a usable process chamber into which the entry of the semiconductor substrate is permitted and an unusable process chamber into which the entry of the semiconductor substrate is prohibited, and the The robot arm performs the Nth process cycle (where N is a natural number) according to the first transfer sequence, and immediately at the first time when the prohibition on one or more of the unused process chambers is lifted, the unused process chamber is By switching to an available process chamber, the robot arm provides operation information to the manufacturing process equipment starting from the N+1th process cycle according to the second transfer sequence.

A substrate processing system and a substrate processing device according to the technical idea of the present invention provide a logical transfer order in the control server when a process chamber in which entry of a semiconductor substrate is prohibited is immediately used in a single wafer type facility having a plurality of process chambers. By controlling , there is an effect of improving the efficiency of the substrate processing system and improving the productivity of the substrate processing device.

1 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the technical idea of the present invention.
Figure 2 is a cross-sectional view schematically showing a part of a substrate processing apparatus according to an embodiment of the technical idea of the present invention.
Figure 3 is a diagram schematically showing the operation sequence of a substrate processing system according to an embodiment of the technical idea of the present invention.
Figure 4 is a diagram schematically showing a process in which a substrate processing system according to an embodiment of the technical idea of the present invention is operated in a substrate processing apparatus.
Figure 5 is a diagram linearly showing the process of operating each process cycle in a substrate processing system according to an embodiment of the technical idea of the present invention.
Figure 6 is a flowchart showing a method of processing a substrate using a substrate processing system according to an embodiment of the technical idea of the present invention.
7 is a flowchart showing a method of processing a substrate using a substrate processing system according to another embodiment of the technical idea of the present invention.
Figure 8 is a flowchart showing a method of processing a substrate using a substrate processing system according to another embodiment of the technical idea of the present invention.
9 and 10 are cross-sectional views showing a process for manufacturing a semiconductor device using a substrate processing apparatus according to an embodiment of the technical idea of the present invention.

Hereinafter, embodiments of the technical idea of the present invention will be described in detail with reference to the attached drawings.

1 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the technical idea of the present invention.

Referring to FIG. 1, the substrate processing apparatus 1000 may include a front end module 100, a transfer module 200, a load lock chamber 300, a manufacturing process equipment 400, and a control server 500. there is.

The front end module 100 has a load port 110 that provides an internal space 111 in which the substrate container 10 can be accommodated, and the internal space 111 of the load port 110 is applied by vacuum pressure or It can be adjusted to atmospheric pressure.

The front end module 100 pressurizes the inner space 111 of the load port 110 and the inside of the substrate container 10 from vacuum pressure to atmospheric pressure. Can be filled with nitrogen gas, inert gas, or clean dry air.

The front end module 100 may maintain the internal space 111 at a vacuum pressure while a manufacturing process for the semiconductor substrate 600 is performed. Additionally, the front end module 100 may forcibly exhaust gas in the internal space 111 of the load port 110 in order to depressurize the internal space 111 from atmospheric pressure to vacuum pressure.

In some embodiments, the front end module 100 maintains the pressure in the internal space 111 during a semiconductor manufacturing process on the semiconductor substrate 600 at a pressure higher than the vacuum atmosphere within the manufacturing process equipment 400, but outside the semiconductor substrate 600. It can be maintained at a vacuum pressure lower than pressure (for example, atmospheric pressure). Accordingly, gas or moisture remaining in the substrate container 10 waiting in the front end module 100 and the plurality of semiconductor substrates 600 stored in the substrate container 10 can be removed.

Even if the pressure of the internal space 111 of the front end module 100 is not reduced to the vacuum atmosphere of the manufacturing process equipment 400, the substrate container 10 does not lower the productivity of the substrate processing apparatus 1000 depending on process conditions. ) and contamination of the semiconductor substrate 600 can be sufficiently removed.

The transfer module 200 may be placed at the rear end of the front end module 100. The transfer module 200 may be provided with a transfer robot 210 that is freely rotatable for loading or unloading a plurality of semiconductor substrates 600 stored in the substrate container 10 waiting at the front end module 100. You can. The transfer robot 210 of the transfer module 200 transfers the unprocessed semiconductor substrate 600 in the substrate container 10 to the load lock chamber 300, and the manufacturing process is completed in the manufacturing process equipment 400. The semiconductor substrate 600 waiting in the load lock chamber 300 can be transferred to the substrate container 10.

In some embodiments, in order to prevent the semiconductor substrate 600 from being exposed to external air and being contaminated while the transfer robot 210 of the transfer module 200 transfers the semiconductor substrate 600, the transfer module 200 can maintain its interior in a vacuum state. For example, the transfer module 200 may maintain the pressure of an internal sealable space at a vacuum pressure.

Here, the front end module 100 is provided with a load port 110 to prevent the air pressure state of the transfer module 200 from changing when the first door 141 is opened to transfer the semiconductor substrate 600. ) can be adjusted to be the same as the air pressure state of the transfer module 200.

The load lock chamber 300 may be disposed between the transfer module 200 and the manufacturing process equipment 400. The load lock chamber 300 may adjust its internal pressure using vacuum pressure to prevent the air pressure state of the transfer module 200 and the transfer chamber 410 of the manufacturing process equipment 400 from changing. A buffer stage (not shown) on which the semiconductor substrate 600 temporarily stands may be installed inside the load lock chamber 300, and the semiconductor substrate 600 transferred from the transfer robot 210 of the transfer module 200 stands by in the buffer stage while the pressure of the load lock chamber 300 is adjusted.

The load lock chamber 300 forms a vacuum atmosphere close to the transfer module 200 when the transfer robot 210 of the transfer module 200 loads or unloads the semiconductor substrate 600, so that the transfer module 200 ) can receive an unprocessed semiconductor substrate 600 from the transfer robot 210. In addition, when the robot arm 420 in the transfer chamber 410 of the manufacturing process equipment 400 is loading or unloading the semiconductor substrate 600, a vacuum atmosphere close to the transfer chamber 410 is formed, so that the robot arm ( The semiconductor substrate 600 on which the manufacturing process has been completed can be supplied from 420).

The manufacturing process equipment 400 is disposed at the rear end of the load lock chamber 300 and may include a transfer chamber 410 and a plurality of process chambers 430. The manufacturing process equipment 400 may be a dry etch equipment, a chemical vapor deposition equipment, a thermal diffusion furnace, a developing equipment, or a cleaning equipment. It is not limited to this.

The transfer chamber 410 may be disposed between the load lock chamber 300 and the process chamber 430. The transfer chamber 410 is provided with a robot arm 420 that can rotate freely, and can be responsible for transferring the semiconductor substrate 600 waiting in the process chamber 430 and the load lock chamber 300.

The process chamber 430 may perform a semiconductor manufacturing process on the semiconductor substrate 600 . An entrance gate (not shown) through which the semiconductor substrate 600 is brought in or out may be installed between the process chamber 430 and the transfer chamber 410. A plurality of process chambers 430 may be installed along each side of the transfer chamber 410. The process chamber 430 may be composed of first to sixth process chambers CH1 to CH6 along a clockwise direction. In the drawing, the number of process chambers 430 is shown as six, but the number is not limited thereto.

The semiconductor substrate 600 on which the semiconductor manufacturing process has been completed in the process chamber 430 may be transferred to the waiting substrate container 10 within the front end module 100 by the robot arm 420 of the transfer chamber 410. . While the semiconductor substrate 600 is stored in the substrate container 10, the interior of the front end module 100 may be maintained in a vacuum state. Until the substrate container 10 is unloaded, the semiconductor substrate 600 for which the semiconductor manufacturing process has been completed waits in the front end module 100 in a vacuum state, so gas or moisture remaining on the semiconductor substrate 600 cannot be removed. You can.

In addition, contaminants remaining on the semiconductor substrate 600 on which the semiconductor manufacturing process has been completed can be removed while waiting in the front end module 100, so that the corrosive gas emitted from the semiconductor substrate 600 on which the manufacturing process has been completed can cause the substrate to It is possible to prevent the unprocessed semiconductor substrate 600 stored in the container 10 from being contaminated.

The control server 500 may include a device controller, a module controller, and a switching hub that connects the device controller and the module controller. In the drawing, the control server 500 is shown as being placed on the side of the load lock chamber 300, but the arrangement of the control server 500 is not limited to this.

The control server 500 operates each of the substrate processing devices 1000 based on a process recipe in which control programs and process processing condition data for realizing various processes on the semiconductor substrate 600 on which the semiconductor manufacturing process is performed are recorded. By sending control signals to the components of , it is possible to participate in the overall operation of the substrate processing system 1000S (see FIG. 4). Details about the substrate processing system 1000S (see FIG. 4) will be described later.

Meanwhile, the semiconductor substrate 600 processed in the substrate processing apparatus 1000 may typically be a wafer for manufacturing semiconductor devices. In addition to the illustrated configuration of the substrate processing apparatus 1000, multiple systems may be required to perform manufacturing processes required for complete manufacturing of a semiconductor integrated circuit or semiconductor chip. Here, for clear description of the present invention, typical configurations or configurations that can be understood at the level of those skilled in the art will be omitted.

Figure 2 is a cross-sectional view schematically showing a part of a substrate processing apparatus according to an embodiment of the technical idea of the present invention.

Referring to FIG. 2, the substrate processing apparatus 1000 includes a front end module 100, a transfer module 200 and a load lock chamber 300 disposed on the rear side of the front end module 100, as described above. can do.

The front end module 100 may include a load port 110, a first door 141, a second door 143, a vacuum pump 120, and a gas supply unit 130.

The first door 141 may be installed between the load port 110 and the transfer module 200 and may open and close the opening of the load port 110. The first door 141 transports the unprocessed semiconductor substrate 600 loaded in the substrate container 10 to the manufacturing process facility (400, see FIG. 1) or manufactures it in the manufacturing process facility (400, see FIG. 1). It may be opened to load the semiconductor substrate 600 on which the process has been completed into the substrate container 10 . Additionally, the first door 141 may be closed to prevent the air pressure state of the transfer module 200 from changing due to the air pressure state of the internal space 111 of the load port 110.

The second door 143 may be disposed for loading or unloading the substrate container 10. For example, the second door 143 may be disposed above the load port 110 to open and close the opening of the load port 110. The second door 143 may be open while the substrate container 10 is being loaded into the front end module 100 or the substrate container 10 is being unloaded from the front end module 100 . Additionally, the second door 143 may be closed to isolate the internal space 111 of the load port 110 from the outside.

The internal space 111 of the load port 110 where the substrate container 10 is accommodated may be sealed by closing the first door 141 and the second door 143. The first door 141 and the second door 143 may each be provided with a slit valve to maintain the internal space 111 in a sealed state.

The first door 141 can open or close the container door 11 of the substrate container 10, which opens or closes the front of the substrate container 10. For example, the first door 141 may include a door holder 141a and a support bar 141b. The door holder 141a may have a size and shape corresponding to the container door 11 of the substrate container 10, and is used to lock or unlock the container door 11 of the substrate container 10. An opening and closing device may be provided.

The support 141b is fixedly coupled to the rear of the door holder 141a and can move the door holder 141a. When the substrate container 10 is in close contact with the first door 141 while the first door 141 closes the opening of the load port 110, the door holder 141a is attached to the container door of the substrate container 10. After releasing the lock (11), the container door 11 is fixed by suction, and the container door 11 of the substrate container 10 can be separated from the main body of the substrate container 10 by moving backwards.

The vacuum pump 120 may exhaust gas from the sealed internal space 111 by closing the first door 141 and the second door 143. The vacuum pump 120 may exhaust gas from the internal space 111 through the exhaust port 121 provided in the load port 110.

The vacuum pump 120 is connected to the exhaust port 121 through an exhaust line, and a pressure control valve and a flow control valve may be installed in the exhaust line. As the vacuum pump 120 exhausts the gas in the internal space 111, the internal space 111 and the inside of the substrate container 10 may be in a vacuum state.

The gas supply unit 130 may inject purge gas into the internal space 111 sealed by the closing operation of the first door 141 and the second door 143. For example, the purge gas can be nitrogen gas, inert gas, or clean dry air. The gas supply unit 130 supplies purge gas to the internal space 111 through the injection port 131 provided in the load port 110.

The gas supply unit 130 may be equipped with a gas supply valve for controlling the flow of purge gas by an electrical signal and various filters for removing foreign substances contained in the purge gas supplied to the internal space 111. As the gas supply unit 130 injects the purge gas into the internal space 111, the internal space 111 and the inside of the substrate container 10 are filled with the purge gas and can be brought to atmospheric pressure.

A plurality of semiconductor substrates 600 stored in the substrate container 10 waiting in the front end module 100 are set to the manufacturing process equipment 400 (see FIG. 1), which is a single wafer type equipment, by the transfer module 200. They can be exported one by one according to the transport order.

In the substrate processing system 1000S (see FIG. 4) according to the present invention, the transfer order may vary in real time depending on the availability of the manufacturing process equipment 400 (see FIG. 1), and details about this will be described later.

FIG. 3 is a diagram schematically showing the operation sequence of a substrate processing system according to an embodiment of the technical idea of the present invention, and FIG. 4 is a diagram showing a process in which the substrate processing system according to an embodiment of the technical idea of the present invention is operated in a substrate processing apparatus. This is a drawing schematically showing.

Referring to FIGS. 3 and 4 together, they illustrate a substrate processing system 1000S and a substrate processing apparatus 1000 that performs the substrate processing system 1000S.

The substrate processing system 1000S according to the present invention includes a manufacturing process equipment 400 having a plurality of process chambers 430 and a control server 500 that controls the manufacturing process equipment 400, the control server ( It serves to provide operation information about the transfer order of the semiconductor substrate 600 from the manufacturing process equipment 400 (500).

For a clear explanation of the present invention, the period from when the semiconductor substrate 600 is introduced into the process chamber 430, a predetermined semiconductor manufacturing process is performed, and the semiconductor substrate 600 is withdrawn from the process chamber 430 is defined as one process cycle. Additionally, the process chamber 430 may include first to sixth process chambers CH1 to CH6 along a clockwise direction. In the drawing, the number of process chambers 430 is shown as six, but the number is not limited thereto.

The substrate processing system 1000S provides a semiconductor substrate to the manufacturing process equipment 400 that performs the Nth process cycle (where N is a natural number) according to the first transfer sequence (ST1) from the control server 500. Immediately when the prohibition is lifted for one or more of the at least one process chamber 430 that was in a prohibited state, the transition from the N+1th process cycle to the second transfer sequence (ST2) is performed. Can provide commanding operation information.

Specifically, the substrate processing system 1000S operates immediately when the substrate container 10 containing at least one semiconductor substrate 600 is loaded into the load port 110 in the control server 500, All operation information about the plurality of process chambers 430 may be commanded to be transmitted to the manufacturing process equipment 400 . To this end, the control server 500 may operate to logically control the operation information of the plurality of process chambers 430 by a program. That is, the substrate processing system 1000S does not physically control the operation of the process chamber 430, but can logically control the operation of the process chamber 430 according to information that has already been programmed.

Accordingly, for all of the semiconductor substrates 600 stored in the substrate container 10, the semiconductor process is not performed only in the process chamber 430 that is allowed to operate in the initial transfer state (ST0). That is, at least a portion of the semiconductor substrate 600 stored in the substrate container 10 undergoes a semiconductor manufacturing process according to the first transfer sequence (ST1), and the semiconductor substrate 600 stored in the substrate container 10 For the remaining part, the semiconductor manufacturing process may proceed according to the second transfer sequence (ST2).

For example, in the initial transfer state (ST0), a program for the operation order of the first to sixth process chambers (CH1 to CH6), which are all process chambers 430, is sent from the control server 500 to the manufacturing process equipment 400. is transmitted. Among these, the movable fourth and sixth process chambers CH4 and CH6 are included in the first transfer sequence (ST1). Accordingly, the semiconductor substrate 600 can be introduced only into the fourth and sixth process chambers CH4 and CH6. Afterwards, when the initial transfer state (ST0) changes from an inoperable second process chamber (CH2) to an operable state, the second, fourth, and sixth process chambers (CH2, CH4, CH6) is included in the second transfer sequence (ST2). Accordingly, the semiconductor substrate 600 can be introduced only into the second, fourth, and sixth process chambers CH2, CH4, and CH6.

In this way, the semiconductor manufacturing process is carried out for all semiconductor substrates 600 stored in one substrate container 10 in the fourth and sixth process chambers CH4 and CH6 set according to the initial transfer state (ST0). In addition, a semiconductor manufacturing process may be performed in the second process chamber (CH2).

The operation information of the substrate processing system 1000S includes the process chamber in which entry of the semiconductor substrate 600 is allowed among the plurality of process chambers 430 as the available process chamber 431, and the plurality of process chambers 430 A process chamber in which entry of the heavy semiconductor substrate 600 is prohibited may be classified as an inactive process chamber 432. For example, as shown in the figure, the first, second, third, and fifth process chambers CH1, CH2, CH3, and CH5 may be insoluble process chambers 432, and the fourth and sixth process chambers 432 may be inactive. The process chambers CH4 and CH6 may be available process chambers 431 .

Here, the inactive process chamber 432 refers to a process chamber 430 that exists in a state in which processing of the semiconductor substrate 600 is prohibited due to a predetermined cause. For example, the inactive process chamber 432 refers to the process chamber 430 in a state in which it is impossible to proceed with a normal semiconductor manufacturing process, such as when performing regular maintenance or when an abnormality occurs in the process.

However, the unusable process chamber 432 may be converted into a usable process chamber 431 at any time when regular maintenance is completed or the cause of the abnormality is resolved. Accordingly, the control server 500 can newly set the transfer order each time each semiconductor substrate 600 is input into the process chamber 430.

According to the operation information of the substrate processing system 1000S, the manufacturing process equipment 400 changes the unusable process chamber 432 to the available process chamber 431 at the time when the prohibition on entering the unusable process chamber 432 is lifted. Conversion, and the second transfer sequence (ST2) can be performed including the converted usable process chamber 431. For example, as shown in the drawing, the second process chamber CH2 may be an example of the process chamber 430 that is converted from the inactive process chamber 432 to the usable process chamber 431.

The substrate processing system 1000S may transmit a control signal to each component of the substrate processing apparatus 1000 based on a process recipe in which process processing condition data, etc. are recorded. In some embodiments, at least some of the available process chambers 431 may be capable of performing a process recipe according to the semiconductor manufacturing process sequence of the semiconductor substrate 600.

Accordingly, the substrate processing system 1000S may include only the available process chamber 431 capable of performing the process recipe in the first transfer sequence ST1. Additionally, the substrate processing system 1000S may include only the available process chamber 431 capable of performing the process recipe in the second transfer sequence (ST2). Here, the second transfer sequence (ST2) may include more process chambers 430 than the first transfer sequence (ST1) to perform the process cycle.

Ultimately, the substrate processing system 1000S and the substrate processing apparatus 1000 according to the technical idea of the present invention prohibit the entry of the semiconductor substrate 600 into the manufacturing process equipment 400 having a plurality of process chambers 430. When a chamber in a closed state is immediately used, the control server 500 logically controls the transfer order, thereby improving the efficiency of the substrate processing system 1000S and improving the productivity of the substrate processing apparatus 1000. there is.

Figure 5 is a diagram linearly showing the process of operating each process cycle in a substrate processing system according to an embodiment of the technical idea of the present invention.

Referring to FIG. 5 , it shows a manufacturing process equipment 400 (see FIG. 4 ) that performs the Nth process cycle (where N is a natural number) in the substrate processing system 1000S.

In order to clearly explain the substrate processing system 1000S of the present invention, a semiconductor substrate 600 (see FIG. 4) is introduced into the process chamber 430 (see FIG. 4), a predetermined semiconductor manufacturing process is performed, and then returned to the process chamber. The period from (430, see FIG. 4) to withdrawal is defined as one process cycle.

For example, the process cycle may include the first to fifth process cycles (C1 to C5). In the drawing, the number of process cycles is shown as five, but the process cycle is not limited thereto.

As previously described, the process cycle may be possible only in the available process chamber 431 (see FIG. 4) among the manufacturing process equipment 400 (see FIG. 4). Specifically, the first and second process cycles (C1, C2) are performed in the fourth and sixth process chambers (CH4, CH6), and the third to fifth process cycles (C3, C4, C5) are performed in the second, It may be performed in the fourth and sixth process chambers (CH2, CH4, CH6). In other words, the 1st and 2nd process cycles (C1, C2) are performed by the first transfer sequence (ST1), and the 3rd to 5th process cycles (C3, C4, C5) are performed by the second transfer sequence (ST2). It can be performed by .

The process cycles in each available process chamber 431 (see FIG. 4) may be performed simultaneously or may be performed with time differences. This may be due to the process recipe that can be performed in each available process chamber 431 (see FIG. 4), etc.

Figure 6 is a flowchart showing a method of processing a substrate using a substrate processing system according to an embodiment of the technical idea of the present invention.

In the substrate processing method S100 using the substrate processing system 1000S (see FIG. 4) described below, if an embodiment can be implemented differently, specific process steps may be performed differently from the order described. For example, two processes described in succession may be performed substantially at the same time, or may be performed in an order opposite to the order in which they are described.

Referring to FIG. 6, a substrate processing method (S100) using the previously described substrate processing system (1000S, see FIG. 4) is sequentially shown.

First, the substrate processing method (S100) according to the present invention may perform a first step (S110) in which the operation order of all process chambers is transmitted as a program from the control server to the manufacturing process equipment.

Subsequently, the substrate processing method (S100) according to the present invention may perform a second step (S120) of checking whether each process chamber is available. After this, the third step (S130) of setting the first transfer order can be performed using only the available process chambers. After this, the fourth step (S140) can be performed in which the process cycle is performed in the available process chamber according to the first transfer sequence. After this, a fifth step (S150) can be performed to confirm which process chamber has been converted from an inactive process chamber to a usable process chamber. Afterwards, if there is a process chamber that has been converted to an available process chamber in the fifth step (S150), a sixth step (S160) of setting a second transfer order including the new available process chamber can be performed.

Finally, the substrate processing method (S100) according to the present invention can perform the seventh step (S170) of performing a process cycle in an available process chamber according to the second transfer sequence.

7 is a flowchart showing a method of processing a substrate using a substrate processing system according to another embodiment of the technical idea of the present invention.

Referring to FIG. 7, the substrate processing method (S200) using the process of checking the process recipe among the previously described substrate processing system (1000S, see FIG. 4) is sequentially shown.

First, the substrate processing method (S200) according to the present invention may perform a first step (S210) of confirming a process recipe to proceed with the semiconductor manufacturing process according to the manufacturing process sequence of the semiconductor substrate.

Subsequently, the substrate processing method (S200) according to the present invention may perform a second step (S220) in which each process chamber determines whether the process recipe confirmed in the first step (S210) is in progress. Afterwards, a third step (S230) can be performed to classify process chambers that can proceed with the process recipe identified in the first step (S210) into available process chambers. Simultaneously with the third step (S230), a fourth step (S240) may be performed to classify a process chamber in which the process recipe identified in the first step (S210) cannot be processed as an unusable process chamber.

Finally, the substrate processing method (S200) according to the present invention can perform a fifth step (S250) of performing a process cycle in an available process chamber according to the first transfer sequence.

Figure 8 is a flowchart showing a method of processing a substrate using a substrate processing system according to another embodiment of the technical idea of the present invention.

In the substrate processing method (S300) using the substrate processing system (1000S, see FIG. 4) described below, if an embodiment can be implemented differently, specific process steps may be performed differently from the order described. For example, two processes described in succession may be performed substantially at the same time, or may be performed in an order opposite to the order in which they are described.

Referring to FIG. 8, a substrate processing method (S300) using the previously described substrate processing system (1000S, see FIG. 4) is sequentially shown.

First, the substrate processing method (S300) according to the present invention can be performed substantially in the same manner as the sixth step (S160) of the substrate processing method (S100) described in FIG. 6. Therefore, detailed description of the first to sixth steps (S110 to S160) will be omitted here.

Next, the substrate processing method (S300) according to the present invention may perform a first step (S310) of performing a process cycle in an available process chamber according to a second transfer sequence. After this, a second step (S320) may be performed to check which process chamber has been converted from an inactive process chamber to a usable process chamber. Afterwards, if there is a process chamber that has been converted to an available process chamber in the second step (S320), a third step (S330) of setting a third transfer order including the new available process chamber can be performed.

Finally, the substrate processing method (S300) according to the present invention can perform a fourth step (S340) of performing a process cycle in an available process chamber according to a third transfer sequence.

9 and 10 are cross-sectional views showing a process for manufacturing a semiconductor device using a substrate processing apparatus according to an embodiment of the technical idea of the present invention.

Referring to FIG. 9, interlayer insulating films 620 and sacrificial films 640 are alternately formed on a semiconductor substrate 600 using a substrate processing apparatus 1000 (see FIG. 1) according to the technical idea of the present invention. can be formed.

The semiconductor substrate 600 may include, for example, silicon (Si). Alternatively, the semiconductor substrate 600 includes a semiconductor element such as germanium (Ge), or a compound semiconductor such as silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs), and indium phosphide (InP). can do. Alternatively, the semiconductor substrate 600 may have a silicon on insulator (SOI) structure. For example, the semiconductor substrate 600 may include a BOX layer (buried oxide layer). Additionally, the semiconductor substrate 600 may include a conductive region, for example, a well doped with impurities or a structure doped with impurities. Additionally, the semiconductor substrate 600 may have various device isolation structures, such as a shallow trench isolation (STI) structure.

Additionally, the semiconductor substrate 600 may have a thickness of about 0.1 mm to about 1 mm. If the thickness of the semiconductor substrate 600 is too thin, the mechanical strength may be insufficient, and if the thickness is too thick, the time required for subsequent grinding may be long, which may reduce the productivity of the semiconductor product.

In some embodiments, a lower structure (not shown) including at least one transistor may be disposed between the semiconductor substrate 600 and the lowermost sacrificial layer 641.

The interlayer insulating films 620 may include a plurality of interlayer insulating films 621 to 626, and the sacrificial films 640 may include a plurality of sacrificial films 641 to 646, and the interlayer insulating films 621 to 626 may include a plurality of interlayer insulating films 621 to 626. ) and a plurality of sacrificial layers 641 to 646 may be alternately stacked on the semiconductor substrate 600, starting with the sacrificial layer 641 as the lowest layer, as shown.

The sacrificial layers 640 may be formed of a material that can be etched with an etch selectivity with respect to the interlayer insulating layers 620 . That is, in the process of etching the sacrificial films 640 using a predetermined etching recipe, the sacrificial films 640 may be formed of a material that can be etched while minimizing etching of the interlayer insulating films 620. This etch selectivity can be expressed quantitatively through the ratio of the etch rate of the sacrificial layers 640 to the etch rate of the interlayer insulating films 620.

In some embodiments, the sacrificial layers 640 may be one of materials having an etch selectivity of about 1:10 to about 1:200 with respect to the interlayer insulating layers 620. For example, the interlayer insulating films 620 may be any one selected from silicon oxide and silicon nitride, and the sacrificial films 640 may be any one selected from silicon, silicon oxide, silicon carbide, and silicon nitride, and the interlayer insulating films 620 may be any one selected from silicon oxide and silicon nitride. It may be a different material from the insulating films 620.

Meanwhile, in some embodiments, the first sacrificial layer 641 and the sixth sacrificial layer 646 may be formed thicker than the second to fifth sacrificial layers 642 to 645. Additionally, the first interlayer insulating film 621 and the fifth interlayer insulating film 625 may be formed to be thicker than the second to fourth interlayer insulating films 622 to 624. However, it is not limited to this, and the thickness of the interlayer insulating films 620 and sacrificial films 640 may be changed in various ways, and the number of layers of the films constituting the interlayer insulating films 620 and sacrificial films 640 may be varied. It can also be modified in various ways.

In carrying out such a manufacturing process, the substrate processing apparatus 1000 (see FIG. 1) according to the technical idea of the present invention includes a manufacturing process equipment 400 (see FIG. 1) having a plurality of process chambers 430 (see FIG. 1). ), when the chamber in which the entry of the semiconductor substrate 600 is prohibited is immediately used, the control server 500 (see FIG. 1) logically controls the transfer order, so that the substrate processing device 1000 (see FIG. 1) It has the effect of improving productivity.

Referring to FIG. 10, using a substrate processing apparatus 1000 (see FIG. 1) according to the technical idea of the present invention, a plurality of interlayer insulating films 620 and sacrificial films 640 are alternately stacked. An opening H1 may be formed.

The plurality of openings H1 may define a space in which a semiconductor region will be formed in the semiconductor device. The plurality of openings H1 may be trenches that have a depth in the Z direction and extend in the Y direction. Additionally, the plurality of openings H1 may be repeatedly formed at a predetermined distance apart in the X direction.

Forming the plurality of openings H1 includes forming a mask pattern defining the positions of the plurality of openings H1 on the interlayer insulating films 620 and sacrificial films 640 alternately stacked with each other, and The method may include alternately anisotropically etching the interlayer insulating layers 620 and the sacrificial layers 640 using the mask pattern as an etch mask.

Meanwhile, in some embodiments, when the interlayer insulating films 620 and the sacrificial films 640 are formed directly on the semiconductor substrate 600, the plurality of openings H1 are formed in the semiconductor substrate 600 as shown. It may be formed to expose a portion of the upper surface of. In addition, as a result of excessive etching in the anisotropic dry etching process, the semiconductor substrate 600 below the plurality of openings H1 may be recessed to a predetermined depth, as shown.

In carrying out such a manufacturing process, the substrate processing apparatus 1000 (see FIG. 1) according to the technical idea of the present invention includes a manufacturing process equipment 400 (see FIG. 1) having a plurality of process chambers 430 (see FIG. 1). ), when the chamber in which the entry of the semiconductor substrate 600 is prohibited is immediately used, the control server 500 (see FIG. 1) logically controls the transfer order, so that the substrate processing device 1000 (see FIG. 1) It has the effect of improving productivity.

Above, embodiments of the technical idea of the present invention have been described with reference to the attached drawings, but those skilled in the art will understand that the present invention can be modified into other specific forms without changing the technical idea or essential features. You will understand that it can be done. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive.

100: front end module 110: load port
120: Vacuum pump 130: Gas supply unit
200: Transfer module 300: Load lock chamber
400: Manufacturing process equipment 410: Transfer chamber
420: Robot arm 430: Process chamber
500: Control server 600: Semiconductor substrate
1000: Substrate processing device 1000S: Substrate processing system

Claims (10)

In the manufacturing process equipment having a plurality of process chambers and a control server for controlling the manufacturing process equipment,
When transmitting the transfer order of the semiconductor substrate from the control server to the manufacturing process equipment,
When the period from when the semiconductor substrate is introduced into the process chamber, a predetermined process is performed, and the semiconductor substrate is taken out is defined as one process cycle,
The control server is,
To the manufacturing process equipment that performs the Nth process cycle (where N is a natural number) according to the first transfer sequence,
Immediately when the ban is lifted for one or more of the at least one process chamber in which entry of the semiconductor substrate was prohibited,
Commands a transition from the N+1th process cycle to the second transfer sequence,
Setting the transfer order each time each semiconductor substrate is input into the process chamber so that the process chamber included in the first transfer order and the process chamber included in the second transfer order are configured independently of each other,
Substrate handling system. According to paragraph 1,
The control server is,
Immediately at the time when the substrate container containing at least one semiconductor substrate is loaded,
A substrate processing system, characterized in that all operation information of the plurality of process chambers is transmitted to the manufacturing process equipment. According to paragraph 2,
The control server is,
A substrate processing system, wherein the operation information of the plurality of process chambers is logically controlled by a program. According to paragraph 2,
At least a portion of the semiconductor substrate stored in the substrate container is processed according to the first transfer sequence,
A substrate processing system, characterized in that the remaining part of the semiconductor substrate stored in the substrate container proceeds through the second transfer sequence. According to paragraph 2,
The above operation information is,
Among the plurality of process chambers, a process chamber in which entry of the semiconductor substrate is allowed is an available process chamber,
A substrate processing system, characterized in that, among the plurality of process chambers, process chambers in which entry of the semiconductor substrate is prohibited are classified as disuse process chambers. According to clause 5,
The manufacturing process equipment is,
Converting the unusable process chamber into a usable process chamber at the point when the ban on entering the unusable process chamber is lifted,
A substrate processing system comprising converting the available process chamber to perform the second transfer sequence. According to clause 5,
At least some of the available process chambers are capable of performing a process recipe according to the process progress order of the semiconductor substrate,
A substrate processing system, characterized in that only the available process chambers capable of performing the process recipe are included in the first transfer sequence. In clause 7,
A substrate processing system, characterized in that only the available process chambers capable of performing the process recipe are included in the second transfer sequence. delete delete

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