KR102629621B1 - Cleaning solution composition for photoresist nozzle - Google Patents
Cleaning solution composition for photoresist nozzle Download PDFInfo
- Publication number
- KR102629621B1 KR102629621B1 KR1020180169018A KR20180169018A KR102629621B1 KR 102629621 B1 KR102629621 B1 KR 102629621B1 KR 1020180169018 A KR1020180169018 A KR 1020180169018A KR 20180169018 A KR20180169018 A KR 20180169018A KR 102629621 B1 KR102629621 B1 KR 102629621B1
- Authority
- KR
- South Korea
- Prior art keywords
- carbonate
- photoresist
- liquid composition
- cleaning liquid
- group
- Prior art date
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- 238000004140 cleaning Methods 0.000 title claims abstract description 45
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 36
- 239000000203 mixture Substances 0.000 title claims abstract description 29
- 239000003660 carbonate based solvent Substances 0.000 claims abstract description 23
- 239000007788 liquid Substances 0.000 claims abstract description 22
- 239000003945 anionic surfactant Substances 0.000 claims abstract description 17
- 239000010954 inorganic particle Substances 0.000 claims abstract description 15
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 13
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 13
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 8
- CQDGTJPVBWZJAZ-UHFFFAOYSA-N monoethyl carbonate Chemical compound CCOC(O)=O CQDGTJPVBWZJAZ-UHFFFAOYSA-N 0.000 claims description 8
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims description 5
- ZZXUZKXVROWEIF-UHFFFAOYSA-N 1,2-butylene carbonate Chemical compound CCC1COC(=O)O1 ZZXUZKXVROWEIF-UHFFFAOYSA-N 0.000 claims description 4
- JFMGYULNQJPJCY-UHFFFAOYSA-N 4-(hydroxymethyl)-1,3-dioxolan-2-one Chemical compound OCC1COC(=O)O1 JFMGYULNQJPJCY-UHFFFAOYSA-N 0.000 claims description 4
- FFYPMLJYZAEMQB-UHFFFAOYSA-N diethyl pyrocarbonate Chemical compound CCOC(=O)OC(=O)OCC FFYPMLJYZAEMQB-UHFFFAOYSA-N 0.000 claims description 4
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 claims description 4
- SDROQGXGPRQQON-UHFFFAOYSA-N 4-butyl-1,3-dioxolan-2-one Chemical compound CCCCC1COC(=O)O1 SDROQGXGPRQQON-UHFFFAOYSA-N 0.000 claims description 2
- SBLRHMKNNHXPHG-UHFFFAOYSA-N 4-fluoro-1,3-dioxolan-2-one Chemical compound FC1COC(=O)O1 SBLRHMKNNHXPHG-UHFFFAOYSA-N 0.000 claims description 2
- ZKOGUIGAVNCCKH-UHFFFAOYSA-N 4-phenyl-1,3-dioxolan-2-one Chemical compound O1C(=O)OCC1C1=CC=CC=C1 ZKOGUIGAVNCCKH-UHFFFAOYSA-N 0.000 claims description 2
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 claims description 2
- 125000005002 aryl methyl group Chemical group 0.000 claims description 2
- BPFOYPDHLJUICH-UHFFFAOYSA-N ethenyl ethyl carbonate Chemical compound CCOC(=O)OC=C BPFOYPDHLJUICH-UHFFFAOYSA-N 0.000 claims description 2
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 claims description 2
- DYHSDKLCOJIUFX-UHFFFAOYSA-N tert-butoxycarbonyl anhydride Chemical compound CC(C)(C)OC(=O)OC(=O)OC(C)(C)C DYHSDKLCOJIUFX-UHFFFAOYSA-N 0.000 claims description 2
- VUPKGFBOKBGHFZ-UHFFFAOYSA-N dipropyl carbonate Chemical compound CCCOC(=O)OCCC VUPKGFBOKBGHFZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 12
- 239000007921 spray Substances 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 4
- -1 trimethylammonium hydride Chemical compound 0.000 description 39
- 230000000052 comparative effect Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000002096 quantum dot Substances 0.000 description 5
- 229910019142 PO4 Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 125000005843 halogen group Chemical group 0.000 description 4
- 235000021317 phosphate Nutrition 0.000 description 4
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 description 3
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000004210 ether based solvent Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 125000003342 alkenyl group Chemical group 0.000 description 2
- 150000008051 alkyl sulfates Chemical class 0.000 description 2
- 125000000129 anionic group Chemical group 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229940124530 sulfonamide Drugs 0.000 description 2
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 description 1
- DQHCJQDPISNGEP-UHFFFAOYSA-N 4,5-bis(ethenyl)-1,3-dioxolan-2-one Chemical compound C=CC1OC(=O)OC1C=C DQHCJQDPISNGEP-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 101000652160 Homo sapiens Mothers against decapentaplegic homolog 5 Proteins 0.000 description 1
- 102100030610 Mothers against decapentaplegic homolog 5 Human genes 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000008055 alkyl aryl sulfonates Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 1
- 229940063953 ammonium lauryl sulfate Drugs 0.000 description 1
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- MYWGVEGHKGKUMM-UHFFFAOYSA-N carbonic acid;ethene Chemical compound C=C.C=C.OC(O)=O MYWGVEGHKGKUMM-UHFFFAOYSA-N 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 description 1
- QGVQVNIIRBPOAM-UHFFFAOYSA-N dodecyl naphthalene-1-sulfonate;sodium Chemical compound [Na].C1=CC=C2C(S(=O)(=O)OCCCCCCCCCCCC)=CC=CC2=C1 QGVQVNIIRBPOAM-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 125000003827 glycol group Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000003261 o-tolyl group Chemical group [H]C1=C([H])C(*)=C(C([H])=C1[H])C([H])([H])[H] 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- FOWDZVNRQHPXDO-UHFFFAOYSA-N propyl hydrogen carbonate Chemical compound CCCOC(O)=O FOWDZVNRQHPXDO-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- XDFGPVSVSMWVQE-UHFFFAOYSA-M sodium;dodecanoic acid;hydrogen sulfate Chemical compound [Na+].OS([O-])(=O)=O.CCCCCCCCCCCC(O)=O XDFGPVSVSMWVQE-UHFFFAOYSA-M 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Classifications
-
- C11D2111/22—
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
Abstract
본 발명은 카보네이트계 용제 및 음이온성 계면활성제를 포함하고, pH가 1 내지 7인 것을 특징으로 함으로써, 무기입자나 금속 산화물을 포함하는 포토레지스트에 대한 세정력이 우수하여, 분사 노즐 내에 침전된 포토레지스트의 잔여물을 남김 없이 효과적으로 세정할 수 있어, 분사 노즐이 막히는 현상을 방지할 수 있고, 이로 인해 상기 잔여물이 기판으로 낙하함으로써 발생할 수 있는 기판의 불량을 방지할 수 있으며, pH를 조절함으로써 경시 안정성이 우수한 포토레지스트 세정액 조성물에 관한 것이다.The present invention contains a carbonate-based solvent and an anionic surfactant and has a pH of 1 to 7, so that it has excellent cleaning power for photoresist containing inorganic particles or metal oxides, and removes photoresist deposited in the spray nozzle. It can be effectively cleaned without leaving any residue, preventing the spray nozzle from clogging, thereby preventing defects in the substrate that may occur when the residue falls on the substrate, and controlling the pH over time. It relates to a photoresist cleaning liquid composition with excellent stability.
Description
본 발명은 포토레지스트 노즐 세정액 조성물에 관한 것이다. The present invention relates to a photoresist nozzle cleaning liquid composition.
디스플레이장치의 제조공정에서는 전자회로 또는 색상을 구현하기 위한 화소 등을 제작하기 위하여 리소그래피 기술을 이용하고 있다. 리소그래피 공정은 기판 상에 미세한 패턴을 생성하는데 사용되는 방법으로 감광성 물질(포토 레지스트라고도 함)이 도포되어 있는 기판에 원하는 패턴이 인쇄되어 있는 마스크를 통해 빛을 조사함으로써 마스크의 회로 패턴을 기판으로 전사하는 공정이다. In the manufacturing process of display devices, lithography technology is used to produce electronic circuits or pixels for implementing colors. The lithography process is a method used to create fine patterns on a substrate. By irradiating light through a mask with a desired pattern printed on a substrate coated with a photosensitive material (also called photoresist), the circuit pattern of the mask is transferred to the substrate. It is a process.
상기 도포된 감광성 물질은 현상공정에서 감광제의 종류에 따라 빛을 받은 부분 또는 빛을 받지 않은 부분이 선택적으로 현상액과 상호작용을 하여 기판으로부터 제거됨으로써 목적으로 하는 회로패턴과 같은 감광제 패턴이 얻어지게 된다. During the development process, the applied photosensitive material selectively interacts with the developing solution in parts that receive light or do not receive light, depending on the type of photosensitive agent, and are removed from the substrate, thereby obtaining a photosensitive agent pattern similar to the desired circuit pattern. .
이와 같이, 감광성 물질을 기판에 도포하는 방법으로는 도포 장치 예를 들면, 노즐 등을 사용하게 되는데 이러한 과정이 반복적으로 수행됨에 따라 도포 장치 내에 감광성 물질의 잔여물이 일부 남아있게 되고, 심할 경우 노즐이 막히는 현상이 발생하기도 한다. In this way, the method of applying the photosensitive material to the substrate uses a coating device, such as a nozzle. As this process is performed repeatedly, some residue of the photosensitive material remains in the coating device, and in severe cases, the nozzle This clogging phenomenon may occur.
특히, 최근에는 컬러필터의 고색재현을 위한 연구가 활발하게 이루어지고 있으며, 이와 관련하여 각종 양자점과 함께 산란입자로서 금속산화물이나 무기입자를 사용하는 경우가 증가하고 있다. 구체적으로, 상기 양자점은 나노미터 크기의 반도체 나노결정으로, 크기와 모양에 따라 에너지 밴드 갭(Bandgap, Eg)이 변하는 특징을 가지고 있으며, 양자 구속(quantum confinement)효과에 의하여 양자점의 크기 조절만으로 발광 파장을 조절할 수 있고, 우수한 색순도 및 높은 PL(photoluminescence)효율을 나타낼 수 있어 최근 다양한 분야에서 관심을 받고 있으며, 상기 양자점은 균질한 단일 구조를 갖는 것일 수도 있지만, 코어-쉘 구조나 그래디언트 구조 등과 같은 이중 구조를 갖는 경우도 있다. 특히, 상기 양자점의 코어 및 쉘의 경우 CdSe, CdS 등과 같은 금속원자를 포함하는 물질을 함유하고 있다In particular, research on high color reproduction of color filters has been actively conducted in recent years, and in relation to this, the use of metal oxides or inorganic particles as scattering particles along with various quantum dots is increasing. Specifically, the quantum dot is a nanometer-sized semiconductor nanocrystal, and has the characteristic of changing energy band gap (Bandgap, Eg) depending on size and shape, and emits light only by adjusting the size of the quantum dot due to the quantum confinement effect. Since the wavelength can be adjusted, excellent color purity, and high PL (photoluminescence) efficiency can be achieved, it has recently been receiving attention in various fields. The quantum dots may have a single homogeneous structure, but may also have a core-shell structure, a gradient structure, etc. In some cases, it has a dual structure. In particular, the core and shell of the quantum dots contain materials containing metal atoms such as CdSe, CdS, etc.
하지만, 이와 같이 금속산화물이나 무기입자 등을 포함하는 감광성 물질을 도포 장치를 통해 도포하는 경우, 노즐 내부에 금속산화물 또는 무기입자 등이 침전되어 도포 장치가 막히는 현상이 발생하며, 침전물이 공정 중 기판 상에 낙하하여 불량을 유발한다. 따라서, 이와 같은 감광성 물질의 도포 장치 내부에 침전된 감광성 물질을 제거하는 세정 공정이 반드시 필요한 실정이다.However, when photosensitive materials containing metal oxides or inorganic particles are applied through a coating device, metal oxides or inorganic particles are deposited inside the nozzle, clogging the coating device, and the deposits are deposited on the substrate during the process. It falls on the table and causes defects. Therefore, a cleaning process to remove the photosensitive material deposited inside the photosensitive material application device is absolutely necessary.
이와 관련하여, 대한민국 등록특허 제10-0954639호에는 pH8 내지 pH12의 TMAH(트리메틸암모늄하이드라이드) 용액에 TMAH(트리메틸암모늄하이드라이드) 탄산염이 첨가된 노즐 플레이트 세정액 조성물에 대하여 기재되어 있으나, 이는 강한 염기를 사용하기 때문에 노즐이 부식되어 노즐의 내구성이 저하되는 문제가 있다. In this regard, Republic of Korea Patent No. 10-0954639 describes a nozzle plate cleaning liquid composition in which TMAH (trimethylammonium hydride) carbonate is added to a TMAH (trimethylammonium hydride) solution of pH 8 to pH 12, but it is a strong base. There is a problem that the nozzle is corroded and the durability of the nozzle is reduced due to the use of .
또한, 대한민국 등록특허 제10-1820310호에는 전체 조성물 100중량부에 대해, 글리콜 에테르류 55-70중량부; 에틸 3-에톡시프로피오네이트 25-35중량부; 메틸 3-메톡시프로피오네이트 3-7 중량부; 및 글리세린 1-5중량부;로 이루어지며, 상기 글리콜 에테르류는 프로필렌 글리콜 모노메틸에테르 1종 단독화합물로 구성되거나 프로필렌 글리콜 모노메틸에테르와 프로필셀로솔브로 이루어진 혼합물인 것을 특징으로 하는 포토레지스트 도포 장비 세정용 조성물에 대하여 기재되어 있으나, 이는 금속 산화물이나 무기입자에 대한 세정력이 좋지 않은 문제가 있다.In addition, Republic of Korea Patent No. 10-1820310 includes 55-70 parts by weight of glycol ethers, based on 100 parts by weight of the total composition; 25-35 parts by weight of ethyl 3-ethoxypropionate; 3-7 parts by weight of methyl 3-methoxypropionate; and 1-5 parts by weight of glycerin; wherein the glycol ethers are composed of a single compound of propylene glycol monomethyl ether or a mixture of propylene glycol monomethyl ether and propyl cellosolve. Although a composition for cleaning equipment is described, it has the problem of poor cleaning power against metal oxides or inorganic particles.
본 발명은 상기와 같은 문제를 해결하기 위한 것으로서, 무기입자와 금속 산화물을 포함하는 포토레지스트에 대한 세정력이 우수한 세정액 조성물을 제공하는 것을 그 목적으로 한다. The present invention is intended to solve the above problems, and its purpose is to provide a cleaning liquid composition with excellent cleaning power for photoresist containing inorganic particles and metal oxides.
상기 목적을 달성하기 위한 본 발명의 세정액 조성물은 카보네이트계 용제 및 음이온성 계면활성제를 포함하고, pH가 1 내지 7인 것을 특징으로 한다.The cleaning liquid composition of the present invention for achieving the above object includes a carbonate-based solvent and an anionic surfactant, and has a pH of 1 to 7.
본 발명의 세정액 조성물은 무기입자나 금속 산화물을 포함하는 포토레지스트에 대한 세정력이 우수하여, 분사 노즐 내에 침전된 포토레지스트의 잔여물을 남김 없이 효과적으로 세정할 수 있어, 분사 노즐이 막히는 현상을 방지할 수 있고, 이로 인해 나타날 수 있는 공정상의 불량을 해소할 수 있는 이점이 있다. 또한, pH를 조절함으로써 경시 안정성이 향상되는 이점이 있다. The cleaning liquid composition of the present invention has excellent cleaning power for photoresist containing inorganic particles or metal oxides, and can effectively clean without leaving residues of photoresist deposited in the spray nozzle, preventing clogging of the spray nozzle. This has the advantage of being able to eliminate process defects that may arise as a result. Additionally, there is an advantage that stability over time is improved by adjusting the pH.
본 발명에서 어떤 부분이 어떤 구성요소를 "포함"한다고 할 때, 이는 특별히 반대되는 기재가 없는 한 다른 구성요소를 제외하는 것이 아니라 다른 구성요소를 더 포함할 수 있는 것을 의미한다. In the present invention, when a part "includes" a certain component, this means that it may further include other components rather than excluding other components, unless specifically stated to the contrary.
이하, 본 발명에 대하여 더욱 상세히 설명한다.Hereinafter, the present invention will be described in more detail.
본 발명의 한 양태에 따른 포토레지스트 세정액 조성물은 카보네이트계 용제 및 음이온성 계면활성제를 포함하고, pH가 1 내지 7인 것을 특징으로 함으로써, 무기입자나 금속 산화물을 포함하는 포토레지스트에 대한 세정력이 우수하여, 분사 노즐 내에 침전된 포토레지스트의 잔여물을 남김 없이 효과적으로 세정할 수 있어, 분사 노즐이 막히는 현상을 방지할 수 있고, 이로 인해 상기 잔여물이 기판으로 낙하함으로써 발생할 수 있는 기판의 불량을 방지할 수 있는 이점이 있다. 또한, pH를 조절함으로써 경시 안정성이 우수한 이점이 있다. 상기 pH 범위를 벗어나는 경우 경시 안정성이 저하되는데, 특히 아민 및 알칼리 화합물을 함께 포함하는 경우 경시 안정성이 보다 저하되는 문제가 발생한다.The photoresist cleaning liquid composition according to one aspect of the present invention includes a carbonate-based solvent and an anionic surfactant and has a pH of 1 to 7, thereby providing excellent cleaning power for photoresist containing inorganic particles or metal oxides. As a result, photoresist residues deposited in the spray nozzle can be effectively cleaned without leaving any residue, preventing the spray nozzle from clogging, thereby preventing substrate defects that may occur when the residue falls onto the substrate. There are benefits to doing this. In addition, there is an advantage of excellent stability over time by adjusting the pH. When the pH range is outside the above range, stability over time is reduced. In particular, when amines and alkaline compounds are included together, stability over time is further reduced.
카보네이트계Carbonate type 용제 solvent
본 발명의 한 양태에 따른 포토레지스트 세정액 조성물은 전술한 바와 같이, 카보네이트계 용제를 포함함으로써 무기입자나 금속 산화물을 포함하는 포토레지스트에 대한 세정력이 우수한 이점이 있다. As described above, the photoresist cleaning liquid composition according to one aspect of the present invention has the advantage of excellent cleaning power for photoresist containing inorganic particles or metal oxides by including a carbonate-based solvent.
본 발명의 일 실시형태에 따르면, 상기 카보네이트계 용제는 하기 화학식 1로 표시되는 화합물을 포함할 수 있으며, 이 경우 하기 화학식 1로 표시되는 화합물이 무기입자 또는 금속 산화물을 포함하는 포토레지스트 내로 침투하여 상기 포토레지스트를 녹여내고, 분사 노즐로부터 탈착시킬 수 있다.According to one embodiment of the present invention, the carbonate-based solvent may include a compound represented by the following formula (1). In this case, the compound represented by the following formula (1) penetrates into the photoresist containing inorganic particles or metal oxides. The photoresist can be melted and detached from the injection nozzle.
[화학식 1][Formula 1]
(상기 화학식 1에서, (In Formula 1 above,
R1 및 R2는 각각 독립적으로 수소, 할로겐기로 치환 또는 비치환된 C6 내지 C20의 방향족 탄화수소기, 할로겐기로 치환 또는 비치환된 C1 내지 C8의 알킬기, 할로겐기로 치환 또는 비치환된 C2 내지 C8의 알케닐기, -COOR3, 금속 이온 또는 암모늄 이온이거나,R 1 and R 2 are each independently hydrogen, a C6 to C20 aromatic hydrocarbon group substituted or unsubstituted with a halogen group, a C1 to C8 alkyl group substituted or unsubstituted with a halogen group, or a C2 to C8 group substituted or unsubstituted with a halogen group. An alkenyl group, -COOR 3 , a metal ion, or an ammonium ion, or
상기 R1 및 R2는 서로 결합되어 히드록시기로 치환 또는 비치환된 C1 내지 C8의 알킬기; C6 내지 C20의 방향족 탄화수소기; 또는 할로겐기;로 치환 또는 비치환된 탄소원자로 이루어진 포화 또는 불포화 고리를 형성하고,R 1 and R 2 are bonded to each other and represent a C1 to C8 alkyl group substituted or unsubstituted with a hydroxy group; C6 to C20 aromatic hydrocarbon group; or a halogen group; forming a saturated or unsaturated ring consisting of a carbon atom substituted or unsubstituted,
상기 R3는 C1 내지 C8의 알킬기이다).R 3 is a C1 to C8 alkyl group).
본 발명에서 방향족 탄화수소기는 예를 들면, 페닐기, o-톨릴기, m-톨릴기, p-톨릴기, 자일릴기, 4-n-부틸페닐기, 4-tert-부틸페닐기, 나프틸기, 안트릴기, 페난트릴기, 비페닐기, 터페닐기 등을 들 수 있다. In the present invention, aromatic hydrocarbon groups include, for example, phenyl group, o-tolyl group, m-tolyl group, p-tolyl group, xylyl group, 4-n-butylphenyl group, 4-tert-butylphenyl group, naphthyl group, and anthryl group. , phenanthryl group, biphenyl group, terphenyl group, etc.
본 발명에서 알킬기는 직쇄 또는 분지쇄일 수 있으며, 예를 들면, 메틸기, 에틸기, n-프로필기, n-부틸기, n-펜틸기, n-헥실기, n-헵틸기, n-옥틸기, n-노닐기, n-데실기, n-도데실기, n-헥사데실기, n-이코실기, 이소프로필기, 이소부틸기, 이소펜틸기, 네오펜틸기, 2-에틸헥실기 등을 들 수 있다. In the present invention, the alkyl group may be straight chain or branched, for example, methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group, n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, n-dodecyl group, n-hexadecyl group, n-icosyl group, isopropyl group, isobutyl group, isopentyl group, neopentyl group, 2-ethylhexyl group, etc. You can.
본 발명에서 알케닐기는 하나 이상의 탄소-탄소 이중결합을 갖으며 직쇄 또는 분지쇄일 수 있다. 예를 들면, 에텐일, 프로펜일, 부텐일, 펜텐일 등을 들 수 있다.In the present invention, an alkenyl group has one or more carbon-carbon double bonds and may be straight chain or branched. For example, ethenyl, propenyl, butenyl, pentenyl, etc. can be mentioned.
본 발명에서 금속 원자는 Na, Ca, K, Al, Li, Mg 등을 들 수 있다. In the present invention, metal atoms include Na, Ca, K, Al, Li, Mg, etc.
상기 화학식 1로 표시되는 화합물은 보다 구체적으로, 모노에틸카보네이트, 디에틸카보네이트, 디메틸카보네이트, 바이닐에틸카보네이트, 프로필렌카보네이트, 디터트부틸디카보네이트, 디에틸디카보네이트, 에틸메틸카보네이트, 아릴메틸카보네이트, 디프로필카보네이트, 1,2-디바이닐에틸렌카르보네이트, 4-플로로-1,3-디옥솔란-2-온, 4-페닐-1,3-디옥솔란-2-온, 4-하이드록시메틸-1,3-디옥솔란-2-온, 4-부틸-1,3-디옥솔란-2-온, 1,2-부틸렌카보네이트 등을 들 수 있으나, 이에 한정되는 것은 아니고, 이들은 각각 단독으로 또는 2종 이상을 혼합하여 사용할 수 있다.More specifically, the compound represented by Formula 1 is monoethyl carbonate, diethyl carbonate, dimethyl carbonate, vinyl ethyl carbonate, propylene carbonate, ditertbutyl dicarbonate, diethyl dicarbonate, ethyl methyl carbonate, aryl methyl carbonate, Propyl carbonate, 1,2-divinylethylene carbonate, 4-fluoro-1,3-dioxolan-2-one, 4-phenyl-1,3-dioxolan-2-one, 4-hydroxymethyl -1,3-dioxolane-2-one, 4-butyl-1,3-dioxolane-2-one, 1,2-butylene carbonate, etc. are mentioned, but are not limited to these, and each of them alone Alternatively, two or more types can be mixed and used.
상기 예시된 화합물 중에서도, 바람직하게는 모노에틸카보네이트, 디메틸카보네이트, 프로필렌카보네이트, 디에틸디카보네이트, 4-하이드록시메틸-1,3-디옥솔란-2-온, 1,2-부틸렌카보네이트를 사용하는 경우, 포토레지스트에 대한 세정력이 보다 향상될 수 있어 바람직할 수 있다. Among the compounds exemplified above, monoethyl carbonate, dimethyl carbonate, propylene carbonate, diethyl dicarbonate, 4-hydroxymethyl-1,3-dioxolan-2-one, and 1,2-butylene carbonate are preferably used. In this case, it may be desirable because the cleaning power of the photoresist may be further improved.
본 발명의 포토레지스트 세정액 조성물은 전술한 카보네이트계 용제와 카보네이트계가 아닌 용제를 혼합하여 사용할 수도 있으나, 카보네이트계 용제를 단독으로 사용하는 경우 무기입자나 금속 산화물을 포함하는 포토레지스트에 대한 세정력이 보다 향상될 뿐만 아니라, 시간이 지나도 세정액 조성물의 세정 효과가 오랜기간 유지될 수 있어 바람직하다. The photoresist cleaning liquid composition of the present invention can be used by mixing the carbonate-based solvent and the non-carbonate-based solvent, but when the carbonate-based solvent is used alone, the cleaning power for photoresist containing inorganic particles or metal oxides is improved. In addition, it is desirable because the cleaning effect of the cleaning liquid composition can be maintained for a long period of time even over time.
이 때, 상기 카보네이트계가 아닌 용제는 당 업계에서 포토레지스트 세정을 위해 사용되는 용제라면 특별한 제한 없이 사용될 수 있는데, 예를 들면, 글리콜에테르계 용제 등의 수용성 유기 용제 등을 들 수 있다.At this time, the non-carbonate-based solvent may be used without particular limitation as long as it is a solvent used for photoresist cleaning in the art, and examples include water-soluble organic solvents such as glycol ether-based solvents.
상기 글리콜에테르계 용제는 글리콜이 갖는 2개의 수산기 중 적어도 1개가 에테르를 형성하고 있는 용제를 의미하는 것으로, 상기 글리콜이란 지방족 탄화수소의 2개의 탄소 원자에 1개씩 하이드록시기가 치환되어 이루어지는 화합물을 의미한다. 상기 지방족 탄화수소란, 사슬형 지방족 탄화수소 또는 고리형 지방족 탄화수소일 수 있다. 상기 글리콜에테르계 용제는 예를 들면, 3-메톡시-3-메틸-1-부탄올(MMB), 디이소프로필렌글리콜모노메틸에테르(DPM), 메틸디글리콜(MDG), 에틸디글리콜(EDG), 및 부틸디글리콜(BDG), 에틸렌글리콜모노부틸에테르(EGBE) 등을 들 수 있으나, 이에 한정되는 것은 아니다. The glycol ether-based solvent refers to a solvent in which at least one of the two hydroxyl groups of glycol forms an ether. The glycol refers to a compound in which one hydroxy group is substituted for each two carbon atoms of an aliphatic hydrocarbon. . The aliphatic hydrocarbon may be a chain-type aliphatic hydrocarbon or a cyclic aliphatic hydrocarbon. The glycol ether-based solvent is, for example, 3-methoxy-3-methyl-1-butanol (MMB), diisopropylene glycol monomethyl ether (DPM), methyl diglycol (MDG), and ethyl diglycol (EDG). , and butyl diglycol (BDG), ethylene glycol monobutyl ether (EGBE), etc., but are not limited thereto.
본 발명의 한 양태에 따르면, 상기 카보네이트계 용제는 이를 포함하는 세정액 조성물 전체 100중량%에 대하여, 90 내지 99.995중량%로 포함될 수 있고, 바람직하게는 90 내지 99.990중량%, 보다 바람직하게는 95 내지 99.990중량%로 포함될 수 있다. 상기 카보네이트계 용제의 함량이 상기 범위 내로 포함되는 경우 포토레지스트에 대한 세정력을 보다 향상시킬 수 있으며, 상기 범위 미만으로 포함되는 경우 세정력이 저하될 수 있고, 상기 범위를 초과하는 경우 음이온계 계면활성제를 포함할 수 없기 때문에 그로 인한 세정력의 상승 효과를 기대하기 힘들 수 있다.According to one aspect of the present invention, the carbonate-based solvent may be included in an amount of 90 to 99.995% by weight, preferably 90 to 99.990% by weight, more preferably 95 to 95% by weight, based on the total 100% by weight of the cleaning liquid composition containing the carbonate solvent. It may be contained at 99.990% by weight. If the content of the carbonate-based solvent is contained within the above range, the cleaning power of the photoresist can be further improved. If the content of the carbonate-based solvent is contained below the above range, the cleaning power may be reduced. If the content exceeds the above range, an anionic surfactant may be used. Since it cannot be included, it may be difficult to expect an increase in cleaning power.
음이온계anion meter 계면활성제 Surfactants
본 발명의 한 양태에 따른 포토레지스트 세정액 조성물은 음이온계 계면활성제를 포함함으로써, 제거의 대상이 되는 포토레지스트에 대한 카보네이트계 용제의 침투성을 보다 향상시키며 이로 인해, 무기입자나 금속 산화물을 포함하는 포토레지스트에 대한 카보네이트계 용제의 세정력을 보다 향상시키며, 상기 무기입자나 금속 산화물 등이 분사 노즐 내에 재부착되는 것을 방지하는 효과가 있다.The photoresist cleaning liquid composition according to one aspect of the present invention includes an anionic surfactant, thereby improving the permeability of the carbonate-based solvent into the photoresist to be removed, thereby improving the penetration of the carbonate-based solvent into the photoresist to be removed. It has the effect of further improving the cleaning power of the carbonate-based solvent on the resist and preventing the inorganic particles, metal oxides, etc. from re-adhering within the spray nozzle.
상기 음이온계 계면활성제는 분자 구조 내에 음이온계 관능기를 갖는 것을 의미할 수 있으며, 이 때 상기 음이온계 관능기란 물 속에서 음이온을 생성하는 기를 의미할 수 있다. The anionic surfactant may mean having an anionic functional group in the molecular structure, and in this case, the anionic functional group may mean a group that generates anions in water.
상기 음이온계 계면활성제는 당 업계에서 음이온계 계면활성제로 분류되는 것이라면 특별한 제한 없이 사용될 수 있으나, 예를 들면, 카르복실산염 계열의 알킬에테르 탄산염, 지방산 알칼리염, 아크릴아미노산염 등; 술폰산염 또는 황산에스테르 계열로서 소듐 라우레이트 설페이트 등의 알킬 설페이트 나트륨, 알킬 사코시네이트염, 알킬황산에스테르염, 폴리옥시에틸렌알킬황산에스테르염, 알킬아릴황산에스테르염, 알킬벤젠술폰산염, 알킬나프탈렌술폰산염, 라우릴알콜 황산 에스테르 나트륨이나 올레일알콜 황산 에스테르 나트륨 등의 고급 알콜 황산 에스테르염류, 라우릴 황산 나트륨이나 라우릴 황산 암모늄 등의 알킬 황산염류, 도데실 벤젠술폰산 나트륨이나 도데실나프탈렌술폰산 나트륨 등의 알킬아릴 술폰산염류 등; 인산 에스테르염 또는 인산염 계열로서 알킬인산염, 폴리옥시에틸렌알킬인산에스테르, 알킬아릴에테르인산염, 알킬인산스테르염, 암모늄플루오로알킬술폰아마이드 등을 들 수 있으나, 이에 한정되는 것은 아니다. The anionic surfactant may be used without particular limitation as long as it is classified as an anionic surfactant in the art. For example, carboxylate-based alkyl ether carbonate, fatty acid alkali salt, acrylic amino acid, etc.; Sulfonate or sulfate ester series, alkyl sulfate sodium such as sodium laurate sulfate, alkyl sarcosinate salt, alkyl sulfate ester salt, polyoxyethylene alkyl sulfate ester salt, alkylaryl sulfate ester salt, alkylbenzene sulfonate, alkyl naphthalene sulfonic acid. Salts, higher alcohol sulfate ester salts such as sodium lauryl alcohol sulfate ester and sodium oleyl alcohol sulfate ester, alkyl sulfates such as sodium lauryl sulfate and ammonium lauryl sulfate, sodium dodecyl benzenesulfonate and sodium dodecylnaphthalenesulfonate, etc. alkylaryl sulfonates, etc.; Phosphoric acid ester salts or phosphate series include, but are not limited to, alkyl phosphates, polyoxyethylene alkyl phosphoric acid esters, alkylaryl ether phosphates, alkyl phosphoric acid ester salts, and ammonium fluoroalkyl sulfonamides.
본 발명의 일 실시형태에 따르면, 상기 음이온계 계면활성제는 이를 포함하는 포토레지스트 세정액 조성물 전체 100중량%에 대하여, 0.005 내지 10중량%, 바람직하게는 0.010 내지 10중량%, 보다 바람직하게는 0.010 내지 5중량%로 포함될 수 있다. 상기 음이온계 계면활성제의 함량이 상기 범위 미만일 경우 무기 안료 등의 무기 입자나 금속 입자의 재부착 방지 효과가 저하되어 세정력이 저하될 수 있고, 상기 범위를 초과하는 경우 조성물의 점도가 향상되어 자가 원료 및 녹아나오는 원료와 포토레지스트 내의 무기 입자, 금속 입자들과의 응집이 발생할 수 있다.According to one embodiment of the present invention, the anionic surfactant is contained in an amount of 0.005 to 10% by weight, preferably 0.010 to 10% by weight, more preferably 0.010 to 0.010% by weight, based on 100% by weight of the photoresist cleaning liquid composition containing the anionic surfactant. It may be included at 5% by weight. If the content of the anionic surfactant is less than the above range, the effect of preventing re-adhesion of inorganic particles such as inorganic pigments or metal particles may be reduced, thereby reducing the cleaning power, and if it exceeds the above range, the viscosity of the composition may improve, making it a self-raw material. And agglomeration may occur between the melted raw materials and inorganic particles and metal particles in the photoresist.
본 발명의 포토레지스트 세정액 조성물은 본 발명의 효과가 저하되지 않는 범위 내에서 사용자의 필요에 따라 각종 첨가제가 더 포함될 수도 있다.The photoresist cleaning liquid composition of the present invention may further contain various additives depending on the user's needs within the range that does not deteriorate the effect of the present invention.
이하, 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시하나, 하기 실시예는 본 발명을 예시하는 것일 뿐 본 발명의 범주 및 기술사상 범위 내에서 다양한 변경 및 수정이 가능함은 당 업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속하는 것도 당연한 것이다. 이하의 실시예 및 비교예에서 함량을 나타내는 "%" 및 "부"는 특별히 언급하지 않는 한 중량 기준이다. Hereinafter, preferred embodiments are presented to aid understanding of the present invention. However, the following examples are merely illustrative of the present invention, and it is obvious to those skilled in the art that various changes and modifications are possible within the scope and technical spirit of the present invention. , it is natural that such variations and modifications fall within the scope of the attached patent claims. In the following examples and comparative examples, “%” and “part” indicating content are based on weight, unless otherwise specified.
제조예Manufacturing example : 세정액 조성물의 제조: Preparation of cleaning liquid composition
하기 표 1에 기재된 구성 및 함량으로 세정액 조성물을 제조하였다.A cleaning liquid composition was prepared with the composition and content shown in Table 1 below.
A-2: 프로필렌카보네이트
A-3: 비스페닐카보네이트
A-4: 프로필렌글리콜메틸에테르아세테이트
A-5: 테트라메틸암모늄하이드록시드(농도 2.38중량%의 수용액)
A-6: 디에탄올아민
B-1: 인산에스테르 (BYK-106, @BYK chemical 社)
B-2: 인산에스테르 (BYK-110, @BYK chemical 社)
B-3: 암모늄플루오로알킬술폰아마이드(Novec 4200, @3M 社)
B-4: 폴리에스터실리콘오일 (SH-8400 @Dowcorning 社)A-1: Diethylene carbonate
A-2: Propylene carbonate
A-3: Bisphenyl carbonate
A-4: Propylene glycol methyl ether acetate
A-5: Tetramethylammonium hydroxide (aqueous solution with concentration of 2.38% by weight)
A-6: Diethanolamine
B-1: Phosphate ester (BYK-106, @BYK chemical company)
B-2: Phosphate ester (BYK-110, @BYK chemical company)
B-3: Ammonium fluoroalkyl sulfonamide (Novec 4200, @3M)
B-4: Polyester silicone oil (SH-8400 @Dowcorning)
실험예Experiment example : : 포토레지스트photoresist 세정력 평가 Cleansing power evaluation
타이타늄옥사이드가 함유된 포토레지스트(SIJ_W1400, DWFC사 제)를 5 × 5cm의 글라스 상에 스핀 코터를 이용하여, 막두께 5㎛로 균일하게 코팅한 뒤, 30분간 상온에서 자연건조하여 기판을 준비하였다. 그 후, 상기 실시예 및 비교예에서 제조된 세정액 조성물에 상기 기판을 상온에서 1분간 침지시킨 후, 포토레지스트의 박리정도를 육안과 Haze미터로 측정하여 그 결과를 하기 표 2에 기재하였다. 육안으로 관찰했을 때의 평가 기준은 하기와 같다.A photoresist containing titanium oxide (SIJ_W1400, manufactured by DWFC) was uniformly coated with a film thickness of 5㎛ on a 5 × 5cm glass using a spin coater, and then naturally dried at room temperature for 30 minutes to prepare a substrate. . Thereafter, the substrate was immersed in the cleaning solution composition prepared in the examples and comparative examples for 1 minute at room temperature, and then the degree of peeling of the photoresist was measured with the naked eye and a Haze meter, and the results are listed in Table 2 below. The evaluation criteria when observed with the naked eye are as follows.
[평가 기준][Evaluation standard]
◎: 매우 양호(얼룩 및 잔여물 99%이상 제거)◎: Very good (more than 99% of stains and residues removed)
○: 양호(얼룩 및 잔여물 90% 이상 99% 미만 제거)○: Good (more than 90% but less than 99% of stains and residues removed)
△: 보통(얼룩 및 잔여물 80% 이상 90% 미만 제거)△: Normal (removes more than 80% but less than 90% of stains and residues)
×: 불량(포토레지스트 80% 미만 제거)×: Poor (less than 80% of photoresist removed)
상기 표 2를 참고하면, 본 발명에서 제시한 바와 같이 카보네이트계 용제와 음이온성 계면활성제를 함께 포함하는 실시예 1 내지 5의 경우, 음이온성 계면활성제를 포함하지 않고 카보네이트계 용제만을 포함하는 경우(비교예 1, 3, 4, 5) 및 카보네이트계 용제를 포함하지 않는 경우(비교예 2)보다 세정력이 우수한 것을 확인할 수 있었다. Referring to Table 2 above, in the case of Examples 1 to 5 containing both a carbonate-based solvent and an anionic surfactant as presented in the present invention, and containing only a carbonate-based solvent without an anionic surfactant ( It was confirmed that the cleaning power was superior to Comparative Examples 1, 3, 4, and 5) and the case without carbonate solvent (Comparative Example 2).
또한, 카보네이트계 이외의 용제를 함께 포함하는 경우(실시예 4, 5)보다는 카보네이트계 용제만을 포함하는 경우(실시예 1 내지 3)에 세정액의 효과가 오랜기간 유지되는 것을 확인할 수 있었으며, 특히 본 발명에서 제시하는 pH범위를 벗어나는 경우(비교예 3 및 4), 경시 안정성이 보다 좋지 못한 것을 확인할 수 있었다.In addition, it was confirmed that the effect of the cleaning solution was maintained for a long period of time when it contained only carbonate-based solvents (Examples 1 to 3) rather than when solvents other than carbonate-based were included (Examples 4 and 5). In particular, this When the pH range was outside the range suggested by the invention (Comparative Examples 3 and 4), it was confirmed that the stability over time was worse.
Claims (6)
상기 카보네이트계 용제는 모노에틸카보네이트, 디에틸카보네이트, 디메틸카보네이트, 바이닐에틸카보네이트, 프로필렌카보네이트, 디터트부틸디카보네이트, 디에틸디카보네이트, 에틸메틸카보네이트, 아릴메틸카보네이트, 디프로필카보네이트, 1,2-디바이닐에틸렌카르보네이트, 4-플로로-1,3-디옥솔란-2-온, 4-페닐-1,3-디옥솔란-2-온, 4-하이드록시메틸-1,3-디옥솔란-2-온, 4-부틸-1,3-디옥솔란-2-온, 비스페닐카보네이트 및 1,2-부틸렌카보네이트로 이루어지는 군으로부터 선택되는 하나 이상을 포함하며,
상기 카보네이트계 용제는 이를 포함하는 세정액 조성물 전체 100중량%에 대하여, 90 내지 99.995중량%로 포함되며,
상기 포토레지스트는 금속산화물 또는 무기입자를 포함하는 것을 특징으로 하는 포토레지스트 세정액 조성물.A photoresist cleaning liquid composition containing a carbonate-based solvent and an anionic surfactant and having a pH of 1 to 7,
The carbonate-based solvents include monoethyl carbonate, diethyl carbonate, dimethyl carbonate, vinyl ethyl carbonate, propylene carbonate, ditertbutyl dicarbonate, diethyl dicarbonate, ethyl methyl carbonate, aryl methyl carbonate, dipropyl carbonate, 1,2- Divinylethylenecarbonate, 4-fluoro-1,3-dioxolane-2-one, 4-phenyl-1,3-dioxolane-2-one, 4-hydroxymethyl-1,3-dioxolane -2-one, 4-butyl-1,3-dioxolane-2-one, bisphenyl carbonate, and 1,2-butylene carbonate;
The carbonate-based solvent is contained in an amount of 90 to 99.995% by weight, based on 100% by weight of the entire cleaning liquid composition containing it,
A photoresist cleaning liquid composition, wherein the photoresist contains metal oxide or inorganic particles.
상기 음이온계 계면활성제는 이를 포함하는 세정액 조성물 전체 100중량%에 대하여, 0.005 내지 10중량%로 포함되는 것을 특징으로 하는 포토레지스트 세정액 조성물.According to paragraph 1,
A photoresist cleaning liquid composition characterized in that the anionic surfactant is contained in an amount of 0.005 to 10% by weight based on 100% by weight of the total cleaning liquid composition containing the anionic surfactant.
상기 카보네이트계 용제는 모노에틸카보네이트, 디메틸카보네이트, 프로필렌카보네이트, 디에틸디카보네이트, 4-하이드록시메틸-1,3-디옥솔란-2-온 및 1,2-부틸렌카보네이트로 이루어지는 군으로부터 선택되는 하나 이상을 포함하는 것을 특징으로 하는 포토레지스트 세정액 조성물.According to paragraph 1,
The carbonate-based solvent is selected from the group consisting of monoethyl carbonate, dimethyl carbonate, propylene carbonate, diethyl dicarbonate, 4-hydroxymethyl-1,3-dioxolan-2-one, and 1,2-butylene carbonate. A photoresist cleaning liquid composition comprising at least one.
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