KR102624060B1 - Etching-object transfer device under vacuum atmosphere and Etching-object transfer method under vacuum atmosphere - Google Patents

Abstract

A reaction chamber in which an object to be etched is etched by plasma formed from an etching gas, a transfer chamber to which an object etched in the reaction chamber is transferred, and the reaction chamber and the transfer chamber are communicated during etching of the object to be etched, A gate valve providing a transfer path through which the object etched in the reaction chamber is transferred to the transfer chamber, and the object being etched in the reaction chamber by sequentially passing through the transfer chamber, the gate valve, and the reaction chamber. A vacuum atmosphere including a transfer unit in which a capture part is formed to hold one side of the object being etched so that it is transferred to the transfer chamber through the gate valve, and the same vacuum atmosphere is formed in the reaction chamber and the transfer chamber. A holding object transport device is provided.

Description

Etching-object transfer device under vacuum atmosphere and Etching-object transfer method under vacuum atmosphere}

The present invention relates to a vacuum atmosphere maintained etched body transfer device and a vacuum atmosphere maintained etched body transfer method. More specifically, a vacuum atmosphere maintained etched body transfer device and a vacuum atmosphere maintained etched body transfer method capable of transporting the etched body during etching. It is related to.

The plasma process accounts for approximately 30% of all processes in the IT field related to semiconductors and displays, which are globally competitive in Korea.

Meanwhile, in the semiconductor process, the deposition process and etching process are core parts of semiconductor device manufacturing technology consisting of nano-scale three-dimensional structures, and countries around the world are competing to secure the source technology for these deposition and etching processes.

In particular, the multi-contact hole etching process is a technology that requires a high level of difficulty among semiconductor plasma process technologies and requires a high level of process technology.

Accordingly, a broad understanding of plasma processes, including plasma and surface reactions, is required.

However, it is recognized that the plasma formed through gases used in the etching process, such as C4F8, CH2F2, and CHF3, is an area where theoretical analysis is impossible due to the complexity of the constituent materials.

Meanwhile, in the case of the multi-contact hole etching process that requires the above-mentioned high level of difficulty, control of plasma variables such as ion current density and electron temperature has emerged as an important task.

Accordingly, studies are being conducted to improve the prediction ability of the contact hole etching process profile by controlling the plasma variable control as described above.

Meanwhile, according to this, a method for verifying the reliability between the computerized simulation of the contact hole etching process profile and the actual etching process results is also required.

Meanwhile, in the actual process of etching multiple contact holes that requires the above-mentioned high level of difficulty, it may be essential to secure sampling and/or plasma characteristic data for the high aspect ratio etching process in order to secure high-precision plasma etching conditions.

However, to date, there is a lack of an etch profile sampling system to secure such high-precision plasma etching conditions.

Therefore, there is a need for a method that can evaluate the etching process of an etched object, such as a pattern wafer, by securing the etching profile of the etched object according to the etching time.

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Republic of Korea Patent Publication No. 10-1697839 (2017.01.12.)

The technical problem to be solved by the present invention is to provide a device for transporting an etched object while maintaining a vacuum atmosphere and a method for transporting an etched object while maintaining a vacuum atmosphere, which can be transported during etching of the etched object.

Another technical problem to be solved by the present invention is to provide a vacuum atmosphere maintained etched body transfer device and a vacuum atmosphere maintained etched body transfer method for sampling an etching profile to secure high-precision plasma etching conditions.

Another technical problem to be solved by the present invention is a vacuum atmosphere maintaining etching object transfer device and a vacuum atmosphere maintaining etching object transfer method applicable to coupon wafer units smaller than the full wafer unit. is to provide.

The technical problems to be solved by the present invention are not limited to those described above.

In order to solve the above technical problem, the present invention provides a device for transporting an object to be etched while maintaining a vacuum atmosphere.

According to one embodiment, the apparatus for transporting an object to be etched while maintaining a vacuum atmosphere includes a reaction chamber in which the object to be etched is etched by plasma formed from an etching gas, a transfer chamber to which the object to be etched in the reaction chamber is transferred, and the object to be etched. During etching, a gate valve that communicates the reaction chamber and the transfer chamber and provides a transfer path through which the object etched in the reaction chamber is transferred to the transfer chamber, and the transfer chamber, the gate valve, and the It sequentially passes through the reaction chamber, and includes a transfer part formed with a capture part that catches one side of the object being etched so that the object being etched in the reaction chamber is transferred to the transfer chamber through the gate valve, wherein the reaction The same vacuum atmosphere may be formed in the chamber and the transfer chamber.

According to one embodiment, the object to be etched may be a coupon wafer.

According to one embodiment, a mounting portion on which the object to be etched is disposed is provided inside the reaction chamber, and the transfer portion is provided with the capture part at one end, directing the capture part from the transfer chamber to the reaction chamber. A moving part that moves laterally, and is provided between one end of the moving part and the capture part, wherein the capture part is moved laterally by the moving part to be located above the object disposed on the mounting unit. , may further include a vertical moving part that moves in the vertical direction toward the mounting unit or away from the mounting unit.

According to one embodiment, the device for transporting the object to be etched while maintaining the vacuum atmosphere further includes a control unit, wherein the control unit controls the moving part so that the capture part is located on the upper side of the object to be etched during etching of the object to be etched. The horizontal movement can be controlled, and the vertical movement of the vertical moving part can be controlled so that the capture part located on the upper side of the etched body holds the upper side of the etched body.

According to one embodiment, the capture part may have adhesiveness.

According to one embodiment, the device for transporting the etched object while maintaining the vacuum atmosphere may be provided to establish data according to the etching time for controlling at least one of the etching depth and the etching cross-sectional profile of the etched object.

According to one embodiment, the capture part may hold one side of the body to be etched, and may hold a non-etched area of the body to be etched.

According to one embodiment, the vacuum atmosphere maintaining etched object transfer device further includes a control unit, wherein the control unit specifies a specific etched object to be transferred to the transfer chamber among at least one etched object being etched in the reaction chamber. Transport can be controlled.

In order to solve the above technical problem, the present invention provides a method for transporting an object to be etched while maintaining a vacuum atmosphere.

According to one embodiment, the method of transporting the object to be etched while maintaining the vacuum atmosphere includes the steps of placing the object to be etched inside a reaction chamber for etching the object to be etched by plasma formed from an etching gas, and etching the object to be etched in the reaction chamber. , forming the same vacuum atmosphere of the transfer chamber and the reaction chamber where the object to be etched in the reaction chamber is to be transferred, so that the reaction chamber and the transfer chamber communicate during etching of the object, the reaction chamber Opening the gate valve provided between the transfer chamber and sequentially passing the transfer unit through the transfer chamber, the gate valve, and the reaction chamber, and holding one side of the object being etched through the capture part formed in the transfer unit. , and may include the step of transferring the caught object to the transfer chamber.

According to one embodiment, the object to be etched in the step of disposing the object to be etched may be a coupon wafer.

According to one embodiment, inside the reaction chamber in the step of arranging the object to be etched, a mounting portion in which the object to be etched is disposed is provided, and a transfer unit in the step of holding one side of the object being etched has the capture device at one end. A part is provided, a moving part that moves the capture part laterally from the transfer chamber toward the reaction chamber, and is provided between one end of the moving part and the capture part, by the moving part, to the mounting unit. It further includes a vertical moving part that vertically moves the capture part moved in the horizontal direction to be located on the upper side of the disposed object to be etched, toward the mounting part or away from the mounting part, wherein one side of the object being etched is The grasping step is a step of moving the moving part in the lateral direction so that the capture part is located on the upper side of the etched body during etching of the etched body, and the capture part located on the upper side of the etched body is positioned on the upper side of the etched body. It may include moving the vertical moving part in the vertical direction to hold the upper side of.

According to one embodiment, the capture part in the step of holding one side of the object being etched may include one having adhesiveness.

According to one embodiment, the method of transporting the etched object while maintaining the vacuum atmosphere may further include establishing data according to the etching time for controlling at least one of the etching depth and the etching cross-sectional profile of the etched object. .

According to an embodiment of the present invention, a reaction chamber in which an object to be etched is etched by plasma formed from an etching gas, a transfer chamber to which an object etched in the reaction chamber is transferred, and during etching of the object to be etched, the reaction chamber and A gate valve that communicates with the transfer chamber and provides a transfer path through which the object etched in the reaction chamber is transferred to the transfer chamber, and sequentially passes through the transfer chamber, the gate valve, and the reaction chamber, It includes a transfer part formed with a capture part that holds one side of the object being etched so that the object being etched in the reaction chamber is transferred to the transfer chamber through the gate valve, wherein the reaction chamber and the transfer chamber have the same A vacuum atmosphere maintaining object transfer device in which a vacuum atmosphere is formed may be provided.

Accordingly, according to the present invention, the same etching environment is maintained inside the reaction chamber without creating an etching environment for etching at least one or more objects, that is, a plurality of objects, and the plurality of objects are etched according to the etching time. It can be etched and transferred to the transfer chamber.

Accordingly, according to the present invention, it is unnecessary to create a plurality of etching environments as in the prior art in order to etch the plurality of objects to be etched, so it can be efficient in terms of time and cost.

Furthermore, there is a technical effect of establishing data according to the etching time of the object to be etched in the same etching environment.

1 is a diagram for explaining a device for transporting an object to be etched while maintaining a vacuum atmosphere according to an embodiment of the present invention.
2 to 8 are diagrams for explaining a method of transporting an object to be etched while maintaining a vacuum atmosphere according to an embodiment of the present invention.
9 to 19 are diagrams for explaining experimental examples of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. However, the technical idea of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosed content will be thorough and complete and so that the spirit of the invention can be sufficiently conveyed to those skilled in the art.

In this specification, when an element is referred to as being on another element, it means that it may be formed directly on the other element or that a third element may be interposed between them. Additionally, in the drawings, the shapes and thicknesses of regions are exaggerated for effective explanation of technical content.

Additionally, in various embodiments of the present specification, terms such as first, second, and third are used to describe various components, but these components should not be limited by these terms. These terms are merely used to distinguish one component from another. Accordingly, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment. Each embodiment described and illustrated herein also includes its complementary embodiment. Additionally, in this specification, 'and/or' is used to mean including at least one of the components listed before and after.

In the specification, singular expressions include plural expressions unless the context clearly dictates otherwise. In addition, terms such as "include" or "have" are intended to designate the presence of features, numbers, steps, components, or a combination thereof described in the specification, but are not intended to indicate the presence of one or more other features, numbers, steps, or components. It should not be understood as excluding the possibility of the presence or addition of elements or combinations thereof. In addition, in this specification, “connection” is used to include both indirectly connecting a plurality of components and directly connecting them.

In addition, terms such as "... unit", "... unit", and "module" used in the specification refer to a unit that processes at least one function or operation, which may be implemented as hardware or software or a combination of hardware and software. there is.

Additionally, in the following description of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

Hereinafter, a device for transporting an object to be etched while maintaining a vacuum atmosphere according to an embodiment of the present invention will be described with reference to the drawings.

1 is a diagram for explaining a device for transporting an object to be etched while maintaining a vacuum atmosphere according to an embodiment of the present invention.

Referring to FIG. 1, the vacuum atmosphere maintaining object transfer device 1000 includes at least one of a reaction chamber 100, a transfer chamber 200, a gate valve 300, a transfer unit 400, and a control unit 500. It can contain one.

Below, each configuration is explained.

Reaction chamber (100)

Referring to FIG. 1, in the reaction chamber 100, the object to be etched (cp) may be etched.

To this end, the reaction chamber 100 includes a mounting part 110, a gas source supply part (not shown), an upper coil part (cl), a dielectric plate (qz), a lower electrode part (el), and a first pressure regulator ( At least one of pm1) can be provided.

According to one embodiment, the object to be etched (cp) may be disposed on the mounting unit 110.

To this end, the mounting unit 110 may be provided below the inner space of the reaction chamber 100, as shown in FIG. 1.

Meanwhile, here, the object to be etched (cp: cp1, cp2, cp3, cp4) refers to the object to be etched, but in the present invention, the object to be etched (cp) may be a coupon wafer. Here, the coupon wafer may mean a wafer of a smaller size than a full wafer generally used in a semiconductor process. For example, here, the coupon wafer may mean a piece cut from the entire wafer into microscopic units. Meanwhile, here, micro units may mean several millimeters or less.

Meanwhile, the object to be etched (cp) may be, for example, a dielectric thin film or a porous thin film made of SiO2, SiOC, or SiO2. Meanwhile, when the etching target (cp) is SiO2, the masking material may be, for example, poly-Si and an ACL mask (Amorphous carbon layer) (see FIG. 18).

According to one embodiment, the gas source supply unit (not shown) may supply a gas source for etching the object cp disposed on the mounting unit 110.

To this end, the reaction chamber 100 includes the gas source supply unit (not shown), wherein the gas source supply unit (not shown) supplies the gas source so that the gas source flows into the gas source supply unit. Of course, it can be connected to a gas source supply (not shown) and a gas source inlet line (not shown).

Meanwhile, here, the gas source is, for example, an eco-friendly etching source that exists as a liquid source (L-PFC (Liquid-Perfluorocarbon)) in a liquid state at room temperature, but is converted to a gas source by heating, for example, decafluoropentane (C5H2F10). ), tetrafluoropropene (C3H2F4), hexafluorobenzene (C6F6), and perfluoro-2-methyl-3-pentanone (C6F12O). Or, for another example, the gas source may be a gas source in a gaseous state at room temperature. For example, the gas source may be a PFC (Perfluorocarbon) gas that has been previously used.

According to one embodiment, the upper coil part (cl) is provided on the upper side of the inner space of the reaction chamber 100, and the reaction chamber (100) allows plasma to be formed from a gas source supplied from the gas source supply unit (not shown). 100) Electric fields can be induced in the internal space.

To this end, the upper coil unit (cl) is electrically connected to a power source (pw1), for example, a high-frequency power source, and can receive high-frequency power.

Accordingly, the object to be etched (cp) disposed on the mounting part 110 can be etched through the plasma formed by the upper coil part (cl) from the gas source provided by the gas source supply part (not shown). .

According to one embodiment, the dielectric plate (qz) blocks the internal space of the reaction chamber 100 from the outside and transmits the electric field induced by the upper coil part (cl) to the gas source. can be maximized.

This is a state in which the electric field induced by the upper coil part cl is transmitted to the gas source according to the dielectric constant of the dielectric material forming the dielectric plate qz, that is, a state in which frequency power is transmitted to the gas source. This takes into account the change.

In other words, the dielectric plate qz can help form plasma in an optimal state by transmitting the frequency power to the gas source in the inner space of the reaction chamber 100.

Meanwhile, here, the dielectric plate qz may be made of, for example, quartz.

According to one embodiment, the lower electrode portion el guides at least one of the ions and neutral active species forming the plasma formed from the gas source toward the object cp disposed on the mounting portion 110. can do.

At this time, the ions and the neutral active species may be involved in etching the object to be etched (cp). More specifically, the ions, specifically positive ions, in the plasma may be involved in the etching of the object cp, where the positive ions are generated by a bias applied to the lower electrode portion el. , it can be induced to accelerate in the direction of the object to be etched (cp) disposed on the upper mounting part 110 of the lower electrode part (el).

For this purpose, of course, the lower electrode portion el can be provided on the lower side of the mounting portion 110, as shown in FIG. 1.

Accordingly, the object to be etched (cp) can be etched by the positive ions.

Meanwhile, the neutral active species in the plasma are guided in the direction of the object to be etched (cp), combine with atoms on the surface of the object to be etched (cp) to form molecules, and are highly volatile, and the object to be etched (cp) cp) can be separated from the surface.

Accordingly, the object to be etched (cp) can be etched by the neutral active species.

According to one embodiment, the first pressure regulator pm1 may control the pressure of the internal space of the reaction chamber 100.

More specifically, the first pressure regulator (pm1) can adjust the internal space of the reaction chamber 100 to a vacuum state.

Accordingly, the plasma may be easily formed from the gas source in the internal space of the reaction chamber 100.

Meanwhile, here, the first pressure regulator pm1 may be provided as, for example, a vacuum pump (turbo pump, etc.).

Meanwhile, according to an embodiment of the present invention, the same vacuum atmosphere may be formed in the reaction chamber 100 and the transfer chamber 200, which will be described later.

According to the embodiment of the present invention, the object to be etched (cp) being etched inside the reaction chamber 100 is considered to be transferred to the transfer chamber 200.

Meanwhile, here, in forming the same vacuum atmosphere as described above, the vacuum atmosphere in the reaction chamber 100 may be used as a standard. Of course, this is because, as described above, etching of the object cp must be performed in the reaction chamber 100.

Accordingly, according to an embodiment of the present invention, the etching profile of the object cp being etched as described above can be secured.

Meanwhile, in this embodiment of the present invention, when etching at least one object (cp) in the same reaction chamber 100, a specific object among the at least one object (cp) being etched is transferred to the transfer chamber ( 200) can be applied to transfer.

Accordingly, according to an embodiment of the present invention, it may be possible to establish data according to etching time in the same etching environment.

Here, the same etching environment refers to an etching atmosphere formed for etching at least one object cp disposed on the mounting portion 110 inside the reaction chamber 100, more specifically, as described above. , may mean an environment in which plasma is formed in a vacuum atmosphere as described above.

More specifically, as shown in FIG. 1, it is assumed that four etched bodies disposed on the internal mounting portion 110 of the reaction chamber 100, that is, the first to fourth etched bodies cp1 to cp4, are etched. Let's take a look.

As shown in FIG. 1, the first to fourth etched bodies (cp1 to cp4) are disposed on the internal mounting portion 110 of the reaction chamber 100, and the first to fourth etched bodies (cp1 to cp4) ) For etching, plasma may be formed in a vacuum atmosphere as described above (hereinafter referred to as an etching environment).

In this etching environment, data according to the etching time, for example, the etching depth of the object according to the etching time (see FIG. 18), the etching object according to the etching time Data on the etch cross-sectional profile (profile angle, see FIG. 19) can be established.

Meanwhile, in establishing data according to etching time, an etching environment was conventionally created for each sample. In other words, assuming the first to fourth objects to be etched (cp1 to cp4) as described above, in the related art, an etching environment is created for each object to be etched, that is, for etching the first object to be etched (cp1). A first etching environment, a second etching environment for etching the second object cp2, a third etching environment for etching the third object cp3, a fourth etching environment for etching the fourth object cp4. Each etching environment was created.

In the case of this conventional method, in order to etch the first to fourth etching objects (cp1 to cp4) as described above, an etching environment must be created four times, which has the disadvantage of being time- and cost-inefficient.

In addition, even if the same etching environment is created for the first to fourth etching objects (cp1 to cp4), this etching environment is substantially determined by external conditions as described above, such as gas source injection amount, etching time, etc. Since this is the level of resetting by repeating four times in accordance with a preset standard, substantially, after completion of etching of the first etched body (cp1), a second etching environment for the second etched body (cp2) is created, and the second etched body (cp1) is etched. In the case of creating a third etching environment for the third etching body (cp3) after completion of etching of (cp2), and creating a fourth etching environment for the fourth etching body (cp4) after completing etching of the third etching body (cp3) , it is obvious that the first to fourth etching environments created on the first to fourth etching objects (cp1 to cp4) cannot be considered to be completely the same.

Accordingly, the present invention provides a method for etching a plurality of etching objects at different etching times while maintaining the same etching environment without creating an etching environment for at least one or more objects, that is, a plurality of etching objects.

Meanwhile, according to one embodiment, it goes without saying that the reaction chamber 100 may have the same configuration as a plasma etching chamber for conventional plasma etching. For the conventional plasma etching chamber, the conventional technology will be referred to.

Transfer chamber (200)

Referring to FIG. 8, the object cp etched in the reaction chamber 100 may be transferred to the transfer chamber 200.

More specifically, according to an embodiment of the present invention, at least one object (cp) being etched in the reaction chamber 100, for example, the first to fourth objects (cp1 to cp4) shown in FIG. 1 Among them, a specific object to be etched, for example, the fourth object to be etched (cp4) shown in FIG. 8 can be transferred to the transfer chamber 200.

To this end, according to an embodiment of the present invention, as described above, the same vacuum atmosphere may be formed in the transfer chamber 200 and the reaction chamber 100.

To this end, the transfer chamber 200 may be connected to a second pressure regulator pm2 that adjusts the pressure of the internal space of the transfer chamber 200, as shown in FIG. 1.

Accordingly, according to an embodiment of the present invention, the same vacuum atmosphere is formed in the reaction chamber 100 and the transfer chamber 200, so that the object cp being etched in the reaction chamber 100 is transferred to the transfer chamber. It can be transferred to (200).

Meanwhile, here, the second pressure regulator (pm2), like the first pressure regulator (pm1) described above, can of course be provided with, for example, a vacuum pump (turbo pump, etc.).

In addition, according to one embodiment, inside the transfer chamber 200, a seating portion ( 210) can be provided.

Accordingly, the object cp transferred from the reaction chamber 100 to the transfer chamber 200 may be seated on the seating portion 210.

Gate valve(300)

Referring to FIG. 5, the gate valve 300 may provide a transfer path through which the object cp etched in the reaction chamber 100 is transferred to the transfer chamber 200.

To this end, the gate valve 300 connects the reaction chamber 100 and the transfer chamber 200 to communicate with the reaction chamber 100 and the transfer chamber 200, as shown in FIG. 5. It is provided in between and can be opened and closed.

More specifically, as described above, when an etching environment for etching the object cp, more specifically, a vacuum atmosphere for etching is formed in the reaction chamber 100, the gate valve ( 300) may be in a closed state.

On the other hand, when a vacuum atmosphere for etching the object cp is formed in the reaction chamber 100 and the same vacuum atmosphere as that of the reaction chamber 100 is formed in the transfer chamber 200, the gate valve ( 300) can be opened.

This is because the gate valve 300 is opened after the same vacuum atmosphere is formed in the reaction chamber 100 and the transfer chamber 200, so that the food being etched in the reaction chamber 100 is This is to transfer each body (cp) to the transfer chamber 200.

Alternatively, according to one embodiment, the gate valve 300 may be closed after the object to be etched (cp) is transferred from the reaction chamber 100 to the transfer chamber 200.

In other words, when the same vacuum atmosphere is formed in the reaction chamber 100 and the transfer chamber 200 as described above, the gate valve 300 can be opened and closed at the user's convenience.

On the other hand, this gate valve 300 may be controlled to open and close through the control unit 500, which will be described later, or may be opened and closed manually by the user, but hereinafter, it is assumed that the gate valve 300 is controlled to open and close through the control unit 500. Do this.

Transfer unit (400)

Referring to FIG. 5, the transfer unit 400 holds one side of the object cp being etched in the reaction chamber 100 and transfers the object cp through the gate valve 300. It can be transferred to the transfer chamber 200.

To this end, the transfer unit 400 may include at least one of a moving part 410, a capture part 430, and a vertical movement unit 450.

According to one embodiment, the moving part 410, as shown in FIG. 5, moves the capture part 430 in a lateral direction (f, from the transfer chamber 200 toward the reaction chamber 100). (see FIG. 5) or can be moved in the transverse direction (b, see FIG. 5) from the reaction chamber 100 toward the transfer chamber 200.

According to one embodiment, the capture part 430 is provided at one end of the moving part 410, as shown in FIG. 5, and may have adhesive properties. Here, one end may mean an end of the moving part 410 facing the reaction chamber 100.

According to one embodiment, the vertical moving part 450 is provided between one end of the moving part 410 and the capture part 430, as shown in Figure 5, and the capture part 430 It can be moved vertically toward the mounting unit 110 (d, see FIG. 5) or away from the mounting unit 110 (u, see FIG. 5).

Accordingly, the transfer unit 400 transfers the capture part 430 through the moving part 410 to the transfer chamber 200, the gate valve 300, and the reaction chamber shown in FIG. 5. By moving in the transverse direction (f, see FIG. 5) sequentially passing through 100, the capture part 430 is etched in the reaction chamber 100 (cp, the fourth object to be etched in FIG. 5). (cp4) can be located above (assumed).

In addition, the transfer unit 400 moves the capture part 430 in the vertical direction (d, see FIG. 5) toward the mounting unit 110 through the vertical movement unit 450, as shown in FIG. As can be seen, through the capture part 430, it is possible to hold the upper side of the object to be etched (cp, assuming the fourth object to be etched (cp4) in FIG. 5) placed on the mounting unit 110 and being etched.

In addition, as shown in FIG. 5, the transfer unit 400 holds the upper side of the etched body (cp, assuming the fourth etched body (cp4) in FIG. 5) through the vertical moving unit 450. The capture part 430 can be moved in the vertical direction (u, see FIG. 5) away from the mounting unit 110.

In addition, the transfer unit 400, through the moving part 410, captures the upper side of the object to be etched (cp, assuming the fourth object to be etched (cp4) in FIG. 5) as shown in FIG. The part 430 may be moved in the lateral direction (b, see FIG. 5) sequentially passing through the reaction chamber 100, the gate valve 300, and the transfer chamber 200.

Accordingly, as shown in FIG. 8, the etched body (cp, assuming the fourth etched body (cp4) in FIG. 5) can be transferred to the transfer chamber 200.

Meanwhile, according to one embodiment, the capture part 430 is the etched body (cp, for example, the first (cp1) shown in FIG. 3) disposed on the mounting portion 110 of the reaction chamber 100. , numbers corresponding to the numbers of the second (cp2), third (cp3), and fourth objects to be etched (cp4) (for example, the first (430a), second (430b), and third shown in FIG. 3 (430c), fourth capture part (430d)) and/or may be provided in a position (in FIGS. 3 and 4, the first (430a) and second capture parts (430b) are not shown, but It is assumed that the first capture part 430a is disposed on the right side of the third capture part 430c, and the second capture part 430b is disposed on the right side of the fourth capture part 430d).

Or from a contrary perspective, the etched body (cp, for example, the first to fourth etched bodies (cp1 to cp4)) is a number corresponding to the capture part 430 (e.g., shown in FIG. 3 The first (430a), second (430b), third (430c), and fourth capture parts (430d) and/or positions may be disposed on the mounting portion 110 of the reaction chamber 100.

Meanwhile, the vertical moving part 450, which moves the capture part 430 in the vertical direction (d, u, see FIG. 5), also corresponds to the capture part 430 (for example, 430a to 430d). Of course, it can be provided in a number (for example, the first (450a), second (450b), third (450c), and fourth vertical moving parts (450d) shown in FIG. 3 and/or positions. (In FIGS. 3 and 4, the first (450a) and second vertical moving parts (450b) are not shown, but the first vertical moving part (450a) is the third vertical moving part (450c). On the right side, the second vertical movement part 450b is assumed to be disposed on the right side of the fourth vertical movement part 450d).

Accordingly, according to an embodiment of the present invention, as shown in FIG. 7, at least one object (cp) being etched in the reaction chamber 100, for example, the first to fourth objects (cp1) to cp4)), the capture part ( 430, the fourth capture part 430d in FIG. 7) and the vertical moving part 450 (the fourth vertical moving part 450d in FIG. 7) are the specific object (e.g., the fourth capture part in FIG. 7) Each body (cp4) can be individually controlled to hold. This will be described in more detail later.

Meanwhile, for such individual control, the vertical moving part 450 may be provided as a solenoid type.

Meanwhile, according to a modified example of the present invention, the capture part 430 is provided to hold one side of the etched body (cp) and a non-etched area (not shown) of the etched body (cp). You can.

More specifically, when the center of the object cp is etched and an etched area (not shown) is formed in the center, the capture part 430 is configured to capture the surrounding area, which is a non-etched area, excluding the center. It can be provided.

According to the present invention, in order to accurately analyze the etched area of the object cp as described above, the etched area is considered to be non-contact.

The control unit 500

The control unit 500 (see FIG. 11) includes each of the previously described parts, namely, the reaction chamber 100, in order to transfer the object cp being etched in the reaction chamber 100 to the transfer chamber 200. At least one of the transfer chamber 200, the gate valve 300, and the transfer unit 400 can be controlled.

To this end, according to one embodiment, the control unit 500 may be provided with buttons (bt) for controlling each of the above-described parts, as shown in FIG. 11.

Hereinafter, the transfer control of the object to be etched (cp) of the control unit 500 according to an embodiment of the present invention will be described.

The transfer control of the etched body (cp) described below assumes that the vacuum atmosphere of the reaction chamber 100 and the transfer chamber 200 is the same, as described above, and the etched body (cp) is It is assumed that etching is in progress within the reaction chamber 100.

Referring to FIG. 5, the control unit 500 controls the moving part 410 so that the capture part 430 is positioned above the etching object (cp) during etching of the etching object (cp). Lateral movement (f, see Figure 5) can be controlled.

Accordingly, the moving part 410 sequentially passes through the transfer chamber 200, the gate valve 300, and the reaction chamber 100 shown in FIG. 5 to produce the capture part 430. It can be positioned above the object to be etched (cp, assuming the fourth object to be etched (cp4) in FIG. 5) being etched in the reaction chamber 100.

Meanwhile, referring to FIG. 5, the control unit 500 controls the capture part 430 located on the upper side of the etched body (cp, assuming the fourth etched body (cp4) in FIG. 5) to be etched (cp, In FIG. 5, the movement of the vertical moving part 450 in the vertical direction (d, see FIG. 5) can be controlled to hold the upper side of the fourth object to be etched (cp4).

Accordingly, the capture part 430 located on the upper side of the object to be etched (cp, assuming the fourth object to be etched (cp4) in FIG. 5) being etched in the reaction chamber 100 is disposed on the mounting portion 110. It is possible to hold the upper side of the object being etched (cp, assuming the fourth object to be etched (cp4) in FIG. 5). Meanwhile, as previously explained, this assumes that the capture part 430 has adhesiveness.

Meanwhile, referring to FIG. 5, when the capture part 430 holds the upper side of the object being etched (cp, assuming the fourth object to be etched (cp4) in FIG. 5), the control unit 500 The movement of the capture part 430 in the vertical direction (u, see FIG. 5) can be controlled so that it moves away from the mounting unit 110.

Accordingly, the capture part 430 holding the upper side of the object being etched (cp, assuming the fourth object to be etched (cp4) in FIG. 5) may be moved away from the mounting portion 110.

Meanwhile, referring to FIG. 8, the control unit 500 controls the capture part 430 holding the upper side of the etched body (cp, assuming the fourth etched body (cp4) in FIG. 8) to the transfer chamber 200. The lateral movement (b, see FIG. 5) of the moving part 410 can be controlled so that it moves.

Accordingly, the moving part 410 sequentially passes through the reaction chamber 100, the gate valve 300, and the transfer chamber 200 shown in FIG. 8, and the etchant (cp, FIG. In Fig. 8, the fourth object to be etched (cp4) can be transferred to the transfer chamber 200.

Meanwhile, the transfer during etching of the object cp is possible because, as described above, the reaction chamber 100 and the transfer chamber 200 are formed in the same vacuum atmosphere.

Meanwhile, let us assume a case where there are multiple objects cp being etched in the reaction chamber 100. For example, as previously described with reference to FIG. 1, four etched bodies disposed on the internal mounting portion 110 of the reaction chamber 100, that is, first to fourth etched bodies cp1 to cp4, are etched. Let's assume that.

As such, when there are a plurality of objects cp1 to cp4 being etched in the reaction chamber 100, the control unit 500 controls at least one object cp being etched in the reaction chamber 100, that is, Among the first to fourth etched bodies (cp1 to cp4), a specific transport may be controlled so that a specific etched body, for example, the fourth etched body (cp4) shown in FIGS. 5 and 8 is transferred to the transfer chamber 200. You can.

More specifically, when the capture parts (430a to 430d) and the vertical moving parts (450a to 450d) are provided in numbers and/or positions corresponding to the etched bodies (cp1 to cp4), as described above, For the specific transfer control, the controller 500 moves the moving part 410 in the lateral direction (f, see FIG. 5) as shown in FIG. 6 to capture the first to fourth capture parts, respectively. (430a to 430d) can be controlled to be located on the corresponding upper sides of the first to fourth etched bodies (cp1 to cp4), respectively.

Thereafter, for the specific transfer control, the control unit 500 selects a specific vertical moving part among the first to fourth vertical moving parts 450a to 450d, for example, the fourth vertical moving part shown in FIG. 7. The movement of (450d) in the vertical direction (d, see FIG. 5) toward the mounting unit 110 can be controlled.

Accordingly, as described above, the first to fourth capture parts 430a to 430d are located above the first to fourth etched bodies cp1 to cp4, respectively, but among them, the control unit 500 For example, by controlling the movement of the specific vertical moving part 450 in the vertical direction (d, see Figure 5) of the fourth vertical moving part 450d, only the fourth object to be etched (cp4) is the fourth capture part. It can be caught by (430d).

Therefore, as previously described with reference to FIG. 8, the control unit 500 controls the moving part 410 to operate the reaction chamber 100, the gate valve 300, and the transfer chamber 200. Controlled to move in the lateral direction (b, see FIG. 5) passing sequentially, only the fourth object cp4 captured by the fourth capture part 430d is transferred from the reaction chamber 100 to the transfer chamber ( 200), the specific transfer can be controlled so that the specific transfer is carried out.

Meanwhile, as described above, this can be implemented by providing the vertical moving part 450 in a solenoid type so that it can be individually controlled as described above.

Meanwhile, according to an embodiment of the present invention, data according to the etching time of the object cp, for example, the etching depth of the object cp according to the etching time (FIG. 18) Reference), was taken into consideration in order to establish data on the etched cross-sectional profile (profile angle, see FIG. 19) of the object to be etched according to the etching time.

More specifically, for etching the object cp, an etching environment is created inside one of the reaction chambers 100, and a vacuum atmosphere in the transfer chamber 200 is formed in the same vacuum atmosphere as the etching environment. , Let us assume that the first to fourth objects to be etched (cp1 to cp4) are being etched by the internal etching environment of the one reaction chamber 100.

At this time, according to an embodiment of the present invention, different etching times are applied to the plurality of etched bodies (cp) inside the reaction chamber 100, for example, the first etched body (cp1) , applying a short etching time to the second etched body (cp2), the third etched body (cp3), and the fourth etched body (cp4) in that order, and transferring them to the transfer chamber 200, Data according to the etching time of the object to be etched (cp) can be established.

According to an embodiment of the present invention, for the first to fourth objects cp1 to cp4 being etched inside one reaction chamber 100 as described above, the etching time is completed (for example, after 3 minutes) ) The first etched body (cp1) is transferred from the one reaction chamber 100 to the transfer chamber 200, and then, in the same manner, the second to fourth etched bodies (cp2 to cp4) for which the etching time is completed are transferred. This is possible by sequentially (for example, sequentially after 6 minutes, 9 minutes, and 12 minutes) from the reaction chamber 100 to the transfer chamber 200.

Accordingly, according to an embodiment of the present invention, data according to the etching time of the object to be etched (cp) can be established under the same etching environment.

Meanwhile, according to the embodiment of the present invention, as described above, this is possible because the reaction chamber 100 and the transfer chamber 200 are formed in the same vacuum atmosphere.

Accordingly, according to the present invention, in order to secure high-precision plasma etching conditions, even when etching a plurality of objects cp, that is, without creating an etching environment for each of the plurality of objects cp, that is, the same The plurality of objects cp can be etched while maintaining the etching environment.

Therefore, according to the present invention, in order to secure sampling and/or plasma characteristic data for a high aspect ratio etching process, four etching environments are created to etch the first to fourth etching objects (cp1 to cp4) as in the prior art. Since it is unnecessary, it can be time- and cost-efficient.

Above, a device for transporting an object to be etched while maintaining a vacuum atmosphere according to an embodiment of the present invention has been described.

Hereinafter, a method for transporting an object to be etched while maintaining a vacuum atmosphere according to an embodiment of the present invention will be described.

2 to 8 are diagrams for explaining a method of transporting an object to be etched while maintaining a vacuum atmosphere according to an embodiment of the present invention.

Referring to FIG. 2, the method of transporting the object to be etched while maintaining the vacuum atmosphere includes the step of placing the object to be etched inside a reaction chamber in which the object to be etched is etched by plasma formed from an etching gas (S110), and placing the object to be etched in the reaction chamber. Etching step (S120), forming the same vacuum atmosphere of the transfer chamber and the reaction chamber to which the object etched in the reaction chamber is to be transferred (S130), during the etching of the object, the reaction chamber and the Open the gate valve provided between the reaction chamber and the transfer chamber so that the transfer chamber communicates, sequentially pass the transfer unit through the transfer chamber, the gate valve, and the reaction chamber, and etch the transfer unit through the capture part formed in the transfer unit. A step of holding one side of the object to be etched (S140), a step of transferring the caught object to the transfer chamber (S150), and etching for controlling at least one of the etching depth and the etching cross-sectional profile of the object to be etched. It may include at least one of the steps of establishing data over time (S160).

Below, each step is explained.

In each step described below, each component of the vacuum atmosphere maintaining object transfer device 1000 according to the previously described embodiment, that is, the reaction chamber 100, the transfer chamber 200, and the gate valve 300 , the transfer unit 400, and the control unit 500 may be omitted. However, of course, just because overlapping descriptions are omitted below does not mean that they are excluded.

Step S110

Referring to FIG. 3, in step S110, objects to be etched (cp: cp1 to cp4) may be placed inside the reaction chamber 100. Hereinafter, as previously described, it will be assumed that the first to fourth etched bodies cp1 to cp4 are disposed inside the reaction chamber 100.

More specifically, in this step, the object to be etched (cp) may be placed on the mounting unit 110.

Regarding the reaction chamber 100, since it overlaps with the description of the previous embodiment, the description of the previous embodiment will be referred to.

Meanwhile, here, the object to be etched (cp) refers to an object to be etched, and in the present invention, the object to be etched (cp) may be a coupon wafer.

Regarding the object to be etched (cp), since it overlaps with the description of the previous embodiment, the description of the previous embodiment will be referred to.

Step S120

Referring to FIG. 3, in step S120, the object cp may be etched in the reaction chamber 100.

To this end, the reaction chamber 100 may be provided with an etching environment as described above, that is, plasma may be formed in a vacuum atmosphere.

Regarding this, as it overlaps with the description of the previous embodiment, the description of the previous embodiment will be referred to.

Meanwhile, in this step, after the etching of the object cp is completed, it goes without saying that the etching environment as described above can be released (i.e., the plasma is turned off).

Meanwhile, at this stage, the gate valve 300 may still be in a closed state.

Step S130

Referring to FIG. 3, in step S130, the vacuum atmosphere of the transfer chamber 200 and the reaction chamber 100, where the object cp etched in the reaction chamber 100 is scheduled to be transferred, may be formed to be the same. .

To this end, through the first pressure regulator (pm1) provided in the reaction chamber 100 and the second pressure regulator (pm2) connected to the transfer chamber 200, the reaction chamber 100 and the transfer chamber ( 200) can be formed in the same vacuum atmosphere.

Meanwhile, in forming the same vacuum atmosphere as described above in this step, of course, the vacuum atmosphere in the reaction chamber 100 can be used as a standard.

Additionally, at this stage, the gate valve 300 may be in a closed state.

Regarding this, since it overlaps with the description of the previous embodiment, the description of the previous embodiment will be referred to.

Step S140

4 and 5, in step S140, during etching of the object cp, the reaction chamber 100 and the transfer chamber 200 are in communication so that the reaction chamber 100 and the transfer chamber 200 are in communication. The gate valve 300 provided between 200 may be opened.

Meanwhile, the gate valve 300 may be controlled to open and close through the control unit 500, as described above, or may be opened and closed manually by the user. However, hereinafter, the gate valve 300 may be controlled to open and close through the control unit 500. Let's assume it's controlled.

Meanwhile, referring to FIG. 5, in this step, the control unit 500 controls the moving part so that the capture part 430 is located on the upper side of the etched body (cp) during etching of the etched body (cp). The lateral movement (f, see FIG. 5) of 410 can be controlled.

Accordingly, the transfer unit 400, more specifically, the moving part 410, sequentially moves the transfer chamber 200, the gate valve 300, and the reaction chamber 100 shown in FIG. 5. By passing through, the capture part 430, as shown in FIGS. 5 and 6, passes through the object to be etched (cp, assuming the fourth object to be etched (cp4) in FIG. 5) in the reaction chamber 100. It can be located on the upper side.

In addition, the control unit 500 controls the vertical moving part 450 to move in the vertical direction (d, see FIG. 5), through the capture part 430, as shown in FIG. 5. It is possible to hold the upper side of the object to be etched (cp, assuming the fourth object to be etched (cp4) in FIG. 5) that is being etched and disposed on the mounting unit 110.

In addition, the control unit 500 controls the vertical moving part 450 to move in the vertical direction (u, see FIG. 5), and as shown in FIG. 5, the object to be etched (cp, in FIG. 5) 4 The capture part 430 holding the upper side of the object to be etched (assuming cp4) may be moved away from the mounting portion 110.

Meanwhile, in this step, the control unit 500 moves the vertical axis of the fourth vertical moving part 450d to hold a specific etchant, for example, the fourth etchant cp4, for specific transport control as described above. Directional (d, see FIG. 5) movement can also be controlled.

As described above, this assumes the first to fourth capture parts 430a to 430d and the first to fourth vertical movement parts 450a to 450d.

Regarding the specific transfer control, since it overlaps with the description of the previous embodiment, the description of the previous embodiment will be referred to.

Step S150

Referring to FIG. 8, in step S150, the control unit 500 controls the captured object to be etched (cp, assuming the fourth object to be etched (cp4) in FIG. 8) to be transferred to the transfer chamber 200. .

To this end, the control unit 500 allows the moving part 410 of the transfer unit 400 to sequentially pass through the reaction chamber 100, the gate valve 300, and the transfer chamber 200. The movement of the moving part 410 in the lateral direction (b, see FIG. 5) can be controlled.

Regarding this, since it overlaps with the description of the previous embodiment, the description of the previous embodiment will be referred to.

Meanwhile, in this step, after the caught object to be etched (cp, assuming the fourth object to be etched (cp4) in FIG. 8) is transferred to the transfer chamber 200, the gate valve 300 may be closed.

Step S160

In step S160, data according to the etching time of the object cp may be established.

More specifically, in this step, data according to etching time may be established for controlling at least one of the etching depth and the etching cross-sectional profile of the object cp.

This is by repeatedly performing steps S140 and S150 described above on a plurality of etched bodies (cp), for example, the first to fourth etched bodies (cp 1 to cp4) (e.g., the first to fourth etched bodies (cp) 4 The etching time for the objects to be etched (cp1 to cp4) is sequentially 3 minutes, 6 minutes, 9 minutes, and 12 minutes, respectively, and each is transferred from the reaction chamber 100 to the transfer chamber 200. Of course, this can be established by obtaining data according to the etching time.

Above, a method for transporting an object to be etched while maintaining a vacuum atmosphere according to an embodiment of the present invention has been described.

Below, an experimental example of the present invention is described.

9 to 19 are diagrams for explaining experimental examples of the present invention.

Figures 9 to 16 show a vacuum atmosphere maintaining object transfer device 1000 manufactured according to an experimental example of the present invention.

Referring to FIG. 9, the vacuum atmosphere maintained object transfer device 1000 manufactured according to an experimental example of the present invention includes the reaction chamber 100, the transfer chamber 200, and the gate according to the previously described embodiment. It can be observed that it includes a valve 300.

Meanwhile, according to an experimental example of the present invention, SiO2 is prepared as the first to fourth etched bodies (cp1 to cp4), and the first to fourth etched bodies are placed on the mounting portion 110 inside the reaction chamber 100. (cp1 to cp4) were placed and etched at different times. More specifically, referring to Figure 17 (a), the first object to be etched (cp1) is 3 minutes, referring to Figure 17 (b), the second object to be etched (cp2) is 6 minutes, Figure 17 (c) ), the third etched body (cp3) was etched for 9 minutes, and referring to Figure 17 (d), the fourth etched body (cp4) was etched for 12 minutes.

Meanwhile, referring to FIGS. 9 and 10 , it can be observed that the moving part 410 is disposed inside the transfer chamber 200.

Meanwhile, referring to FIG. 10, the third and fourth vertical moving parts 450c and 450d formed at one end of the moving part 410 can be observed. Meanwhile, although not shown in FIG. 10, the first vertical movement part 450a is on the right side of the third vertical movement part 450c, and the second vertical movement part 450b is on the fourth vertical movement part. It is formed on the right side of (450d).

In the experimental example of the present invention, the first to fourth vertical moving parts 450a to 450d were provided as solenoid types.

Meanwhile, referring to FIG. 11, a control unit 500 is formed to control each part described above.

In an experimental example of the present invention, the control unit 500 includes the first to fourth vertical movement units 450a to 450d to control the vertical movement (d, u, see FIG. 5). First to fourth buttons (bt: bt1, bt2, bt3, bt4) were formed to move the four vertical moving parts (450a to 450d) in the vertical direction (d, u, see FIG. 5), respectively.

Meanwhile, as shown in FIG. 11, for example, after completion of 12 minutes, which is the etching time of the fourth object cp4 in the reaction chamber 100, the fourth button bt4 is operated, as shown in FIG. 12 By moving the illustrated moving part 410 in the lateral direction (f, see FIG. 5) into the reaction chamber 100, the capture part 430 is moved into the reaction chamber 100, as shown in FIG. 13. ) is moved to the upper side of the fourth object to be etched (cp4), and as shown in FIG. 14, the fourth vertical moving part 450d is moved in the vertical direction (d, see FIG. 5), FIG. 15 As shown, only the fourth object to be etched (cp4) is captured through the fourth capture part (430d). As shown in FIG. 16, it was transferred to the transfer chamber 200.

In the same manner, by operating the first to third buttons bt1 to bt3 shown in FIG. 11, after completion of the etching time of the first to third objects cp1 to cp3 (each, 3 minutes) , 6 min, 9 min), it was transferred from the reaction chamber 100 to the transfer chamber 200.

Meanwhile, referring to FIGS. 17 (a) to 17 (d), photographs of the first to fourth etched objects (cp1 to cp4) etched through the vacuum atmosphere maintaining etched object transfer device 1000 according to the above experimental example are shown. It can be observed.

Meanwhile, FIGS. 18 and 19 show data according to etching time established from photographs of the first to fourth objects cp1 to cp4 shown in FIG. 17.

Referring to FIG. 18, according to an experimental example of the present invention, as the etching time increases from the first to fourth etched bodies (cp1) to the fourth etched bodies (cp4), the first to fourth etched bodies (cp1 to cp4) It can be seen that the etched etching depth (et1 to et4) becomes deeper.

Additionally, referring to FIG. 19, according to an experimental example of the present invention, it can be seen that as the etching time increases from the first to be etched (cp1) to the fourth to be etched (cp4), the cross-sectional profile is closer to 90°.

As such, according to an embodiment of the present invention, a plurality of objects cp being etched in one reaction chamber 100 are taken out through the transfer unit 400 at different etching times, and the transfer chamber ( 200), it is possible to establish data according to the etching time of the plurality of objects cp under the same etching environment.

Meanwhile, as described above, this is possible because, according to an embodiment of the present invention, the reaction chamber 100 and the transfer chamber 200 are formed in the same vacuum atmosphere.

Therefore, according to the present invention, in order to establish data according to the etching time as described above, even when a plurality of etching objects (cp) are etched, without creating an etching environment for each of the plurality of etching objects (cp), that is, , the plurality of etching objects (cp) can be etched while maintaining the same etching environment, and it is unnecessary to create an etching environment for each of the plurality of etching objects (cp), which can be efficient in terms of time and cost.

Above, the present invention has been described in detail using preferred embodiments, but the scope of the present invention is not limited to the specific embodiments and should be interpreted in accordance with the appended claims. Additionally, those skilled in the art should understand that many modifications and variations are possible without departing from the scope of the present invention.

100: reaction chamber
110: Mounting part
200: transfer chamber
210: Seating part
300: gate valve
400: transfer unit
410: Moving parts
430: Capture part
450: Vertical moving part
500: Control unit
1000: Vacuum atmosphere maintenance object transfer device

Claims (13)

a reaction chamber in which the object to be etched is etched by plasma formed from the etching gas;
a transfer chamber to which the object etched in the reaction chamber is transferred;
During the etching of the object to be etched, the gate valve communicates with the reaction chamber and the transfer chamber and provides a transfer path through which the object etched in the reaction chamber is transferred to the transfer chamber; and
A capture part that sequentially passes through the transfer chamber, the gate valve, and the reaction chamber, and holds one side of the object being etched so that the object being etched in the reaction chamber is transferred to the transfer chamber through the gate valve. It includes a conveying part formed,
The same vacuum atmosphere is formed in the reaction chamber and the transfer chamber,
In the reaction chamber, a plurality of the objects to be etched are etched simultaneously,
The plurality of objects are etched at different etching times,
It further includes a control unit,
In order to control at least one of the etching depth and the etching cross-sectional profile of the etched body, the control unit operates through the transfer unit to establish data according to the etching time, based on each etching completion time of the plurality of etched bodies. A vacuum atmosphere-maintaining object transfer device that controls the objects to be sequentially transferred to the transfer chamber.
According to claim 1,
The etched body is a coupon wafer, a vacuum atmosphere maintaining etched body transfer device.
According to claim 1,
Inside the reaction chamber, a mounting portion on which the object to be etched is disposed is provided,
The transfer unit,
The capture part is provided at one end, and the moving part moves the capture part laterally from the transfer chamber toward the reaction chamber; and
The capture part is provided between one end of the moving part and the capture part, and is moved laterally by the moving part to be positioned above the object to be etched on the mounting unit, toward the mounting unit or from the mounting unit. A vertical moving part that moves the object in the vertical direction away from it; further comprising a vacuum atmosphere maintaining object transfer device.
According to clause 3,
The control unit,
During etching of the object to be etched,
Controlling the lateral movement of the moving part so that the capture part is located above the object,
A vacuum atmosphere maintaining etched body transfer device that controls the vertical movement of the vertical moving part so that the capture part located on the upper side of the etched body holds the upper side of the etched body.
According to claim 1,
The capture part is a vacuum atmosphere-maintaining object transfer device having adhesiveness.
delete According to claim 1,
The capture part holds one side of the etched body, and holds a non-etched area of the etched body. A vacuum atmosphere maintaining etched body transfer device.
delete Placing a plurality of objects to be etched inside a reaction chamber for etching the objects by plasma formed from an etching gas;
Etching the plurality of objects in the reaction chamber at different etching times;
Forming the same vacuum atmosphere in the transfer chamber and the reaction chamber where the plurality of objects etched in the reaction chamber are to be transferred;
During the etching of the plurality of objects, a gate valve provided between the reaction chamber and the transfer chamber is opened so that the reaction chamber and the transfer chamber are in communication, and the transfer unit is connected to the transfer chamber, the gate valve, and the reaction chamber. passing sequentially through the capture part formed in the transfer unit to catch one side of the etched object among the plurality of etched objects being etched;
Transferring the caught object to the transfer chamber; and
Establishing data according to etching time to control at least one of the etching depth and the etching cross-sectional profile of the object to be etched,
In the step of holding one side of the plurality of objects, one side of each of the plurality of objects is sequentially held based on the etching completion time of each of the plurality of objects,
In the step of transferring the etched objects to the transfer chamber, the sequentially captured objects are sequentially transferred to the transfer chamber.
According to clause 9,
The etched body in the step of arranging the etched body is a coupon wafer. A vacuum atmosphere maintaining etched body transfer method.
According to clause 9,
Inside the reaction chamber in the step of arranging the objects to be etched, a mounting portion in which the plurality of objects to be etched is disposed is provided,
The transfer unit in the step of holding one side of the object being etched includes the capture part at one end, a moving part that moves the capture part laterally from the transfer chamber toward the reaction chamber, and the moving part. Provided between one end of and the capture part, the capture part, which is moved laterally by the moving part to be located on the upper side of the object disposed on the mounting part, is vertically directed toward the mounting part or away from the mounting part. It further includes a vertical moving part that moves the direction,
The step of holding one side of the object being etched is,
During etching of the object to be etched, moving the moving part in the lateral direction so that the capture part is located on the upper side of the object to be etched; and
Moving the vertical moving part in the vertical direction so that the capture part located on the upper side of the etched body holds the upper side of the etched body. A vacuum atmosphere maintaining the etched body comprising a step.
According to clause 9,
A method of transporting an object to be etched while maintaining a vacuum atmosphere, wherein the capture part in the step of holding one side of the object being etched has adhesiveness.
delete