KR102618411B1 - Electroluminescent device - Google Patents

Abstract

According to embodiments, the electroluminescent device includes a lower structure and an encapsulation structure, and is characterized by including a light transmitting area having a non-through hole shape. Additionally, depending on the embodiment, the shape of the light transmitting area may have various shapes, and depending on the embodiment, a glass substrate or a flexible substrate may be used. Additionally, depending on the embodiment, the light transmission area may include a structure that prevents light emitted from the pixel or external light from being transmitted to the light transmission area.

Description

Electroluminescent device {ELECTROLUMINESCENT DEVICE}

The present disclosure relates to an electroluminescent device, and more specifically to an electroluminescent device having a light transmission area.

Recently, as various portable electronic devices include camera functions, the number of cases of carrying only an electronic device with a built-in camera function is rapidly increasing, rather than carrying a separate camera.

In the past, there was a tendency for cameras to exist outside the image display area of electronic devices, thereby reducing the space in which electronic devices could display images.

To counter this trend, a structure with a camera inside the display is being disclosed in US2016-0337570, etc.

In embodiments, when an electroluminescent device has a light transmission area, a problem occurs in which light emitted from a pixel or external light enters the light transmission area. Additionally, when a laser is irradiated to form a light transmission area, a problem occurs in which pixels in the display area are damaged. In addition, when the common layer and the upper electrode are stacked and then removed to form a light-transmitting area, they must be electrically disconnected, but there is a problem in that the disconnection is difficult. The present embodiments are intended to eliminate at least one of these problems.

The electroluminescent device according to this embodiment includes a lower structure; and an encapsulation structure positioned on the lower structure, wherein the lower structure includes: an inorganic multilayer film; a transparent planarization film located on the inorganic multilayer film; a reflective electrode located on the planarization film and being an individual film; a transparent pixel defining layer positioned on the planarization layer, including a pixel defining portion covering a side of the reflecting electrode, and a first spacer that is not positioned below the reflecting electrode and has a height greater than the pixel defining portion; an intermediate multilayer film located on the reflective electrode and having at least one intermediate common film; and a translucent electrode located on the intermediate multilayer film and being a common layer, wherein the lower structure has a light transmission area and a display area surrounding at least a portion of the light transmission area, and is located below the first spacer and the first spacer. A portion of the planarization film is included in a light transmission area, an electroluminescent unit including the reflective electrode, the intermediate multilayer film, and the translucent electrode is included in the display area, and at least one of the intermediate common film and the translucent electrode is It does not cover the first spacer.

The pixel defining layer further includes a second spacer having the same height as the first spacer and a smaller area than the first spacer, and the middle multilayer layer further includes at least one middle individual layer, wherein the middle individual layer is Instead of covering the first and second spacers, the intermediate common layer and the translucent electrode may cover the second spacer.

The lower structure further includes a substrate positioned below the inorganic multilayer film, and the inorganic multilayer film is positioned below the first spacer and may have at least one recess or at least one hole filled with the planarization film. .

The lower structure is located on the translucent electrode and further includes a protective layer that is a semiconductor or conductive common layer, and the protective layer may not cover the first spacer.

The lower structure has a buffer area between the display area and the light transmissive area and has at least a portion extending along the outer edge of the light transmissive area to separate the display area from the light transmissive area. It has an inorganic surface portion completely surrounding a display area and the light transmission area, the encapsulation structure has an inorganic lower surface, and the inorganic lower surface of the encapsulation structure is in contact with the inorganic surface portion of the lower structure to form the display area and the It is possible to form an inorganic-inorganic encapsulation junction area that completely surrounds the light transmission area.

The electroluminescent device according to this embodiment includes a lower structure; and an encapsulation structure positioned on the lower structure, wherein the lower structure includes: a display area; a light transmitting area in the form of a non-through hole that is at least partially surrounded by the display area; and a buffer area between the display area and the light transmissive area and having at least a portion extending along an outer edge of the light transmissive area to separate the display area from the light transmissive area, wherein the lower structure is a portion of the buffer area. and a light blocking structure extending at least in part along the outer edge of the light transmitting area.

The substructure includes: an inorganic multilayer film; a transparent planarization film located on the inorganic multilayer film; a reflective electrode located on the planarization film and being an individual film; a transparent pixel defining layer covering a side of the reflective electrode and positioned on the planarization layer; an intermediate multilayer film located on the reflective electrode; and a translucent electrode located on the intermediate multilayer layer and being a common layer, wherein the pixel defining layer has a sidewall extending along the outer edge of the light transmitting area in the at least part of the buffer area, and the light blocking structure defines the pixel. It may include a translucent member that extends on the film to cover the sidewall of the pixel defining film and is integrated with the translucent electrode.

The substructure includes: an inorganic multilayer film; a transparent planarization film located on the inorganic multilayer film; a reflective electrode located on the planarization film and being an individual film; a transparent pixel defining layer covering a side of the reflective electrode and positioned on the planarization layer; an intermediate multilayer film located on the reflective electrode; and a translucent electrode located on the intermediate multilayer layer and being a common layer, wherein the planarization layer and the pixel defining layer have sidewalls extending along the outer edge of the light transmitting area in the at least part of the buffer area, and the light blocking structure. may include a translucent member that extends on the planarization layer and the pixel defining layer to cover the sidewall and is integrated with the translucent electrode.

The light blocking structure further includes a reflective member positioned on the inorganic multilayer film, and the side wall may contact the upper surface of the reflective member so that the translucent member contacts the upper surface of the reflective member.

The middle multilayer film may have at least one middle common layer, and a side of the translucent member may be closer to the light transmission area than a side of the middle common layer.

The substructure includes: an inorganic multilayer film; and a transparent planarization film positioned on the inorganic multilayer film, and the light blocking structure may include a first reflective member positioned on the planarization film.

The lower structure includes: a reflective electrode located on the planarization film and being an individual film; a transparent pixel defining layer covering a side of the reflective electrode and positioned on the planarization layer; an intermediate multilayer film located on the reflective electrode; and a translucent electrode positioned on the intermediate multilayer film and being a common layer, wherein the planarization film has a first sidewall extending along the outer edge of the light transmitting area in the at least part of the buffer area, and the first reflective member includes: It may extend on the planarization film to cover the first sidewall.

The light blocking structure further includes a second reflective member positioned on the inorganic multilayer film, and the first side wall is in contact with the upper surface of the second reflective member so that the first reflective member is in contact with the upper surface of the second reflective member. You can access it.

The pixel defining layer has a second sidewall extending along the outer edge of the light transmitting area in the at least part of the buffer area, and the light blocking structure extends on the pixel defining layer to cover the second sidewall and the translucent It may further include a translucent member integral with the electrode, and the second side wall may be in contact with the upper surface of the first reflective member so that the translucent member is in contact with the upper surface of the first reflective film.

The middle multilayer film includes at least one middle common layer, and a side of the translucent member may be closer to the light transmission area than a side of the middle common layer.

The first reflective member may have at least one hole.

The substructure includes: an inorganic multilayer structure; a transparent planarization film positioned on the inorganic multilayer film structure; a reflective electrode located on the planarization film and being an individual film; a transparent pixel defining layer covering a side of the reflective electrode and positioned on the planarization layer; an intermediate multilayer film located on the reflective electrode; and a translucent electrode located on the intermediate multilayer film and being a common film, wherein at least one recess corresponding to the light transmission area and filled with the planarization film may be formed in the inorganic multilayer film structure.

An electroluminescent device according to this embodiment includes a substrate including glass or an organic polymer and a lower structure including an inorganic multilayer film positioned on the substrate; and an encapsulation structure positioned on the lower structure, wherein the lower structure includes: a display area defined inside the outer edge of the inorganic multilayer film when viewed in plan; and a light transmitting area in the form of a non-penetrating hole, which is defined inside the outer edge of the inorganic multilayer film in plan view and is at least partially surrounded by the display area, and an upper part of the inorganic multilayer film corresponds to the light transmitting area. At least one recess is formed, and the display area is opaque.

The inorganic multilayer film includes an oxide film and a nitride film, and the oxide film may be partially removed in the first portion, but the nitride film may not be partially removed.

The electroluminescent device according to this embodiment includes a lower structure including a glass substrate and an inorganic multilayer film positioned on the substrate; and an encapsulation structure positioned on the lower structure, wherein the lower structure includes: a display area defined inside the outer edge of the inorganic multilayer film when viewed in plan; and a light transmitting area in the form of a non-penetrating hole, which is defined inside the outer edge of the inorganic multilayer film in plan view and is at least partially surrounded by the display area, wherein the inorganic multilayer film has at least one light transmitting area corresponding to the light transmitting area. A hole is formed, and the display area is opaque.

According to embodiments, the light-transmitting area is formed in the form of a non-through hole to prevent light from entering the light-transmitting area. In addition, since the light transmission area is formed in the form of a non-through hole, damage due to laser irradiation does not occur. In addition, the structure of the light transmission area is formed in Ω shape to ensure good electrical disconnection.

1 is a plan view of a panel according to one embodiment.
FIG. 2 is a cross-sectional view taken along line II-II' of FIG. 1.
FIG. 3 is a diagram illustrating the shape of an open mask for an evaporation deposition process used when forming the common layer HTL, the common layer ETL, the common layer upper electrode, and the common layer organic protective layer of FIG. 2.
FIG. 4 is a diagram illustrating another shape of an open mask for an evaporation deposition process used when forming the common layer HTL, the common layer ETL, the common layer upper electrode, and the common layer organic protective layer of FIG. 2. .
5 to 9 are diagrams showing the shape of a hole that can be formed in area B of FIG. 4.
10 and 11 are plan views showing the relationship between the display area, the first spacer, the third spacer, the fourth spacer, and the inorganic-inorganic encapsulation joint area.
FIG. 12 shows the shape of an individual mask for an evaporation deposition process used when forming the individual film emitting layer of FIG. 2.
FIG. 13 is a diagram illustrating an embodiment of portion Y of FIG. 2.
FIG. 14 is a cross-sectional view showing a modification of FIG. 13.
Figure 15 is a cross-sectional view of a panel according to one embodiment.
Figure 16 is a panel plan view according to one embodiment.
Figure 17 is a panel plan view according to one embodiment.
FIG. 18 is a cross-sectional view taken along line XVII-XVII' of FIG. 17.
FIG. 19 is a diagram illustrating the shape of an open mask for an evaporation deposition process used when forming the common layer HTL, the common layer ETL, the common layer upper electrode, and the common layer organic protective layer of FIG. 18.
FIG. 20 is a diagram illustrating the shape of an open mask for an evaporation deposition process used when forming the common layer HTL, the common layer ETL, the common layer upper electrode, and the common layer organic protective layer of FIG. 18 .
FIG. 21 is a diagram illustrating another shape of an open mask for an evaporation deposition process used when forming the common layer HTL, the common layer ETL, the common layer upper electrode, and the common layer organic protective layer of FIG. 18 .
FIGS. 22 and 23 are plan views showing the relationship between the display area, the first spacer, the fourth spacer, and the inorganic-inorganic encapsulation joint area when using the open mask of FIGS. 19, 20, and 21.
FIG. 24 is a diagram illustrating another shape of an open mask for an evaporation deposition process used when forming the common layer HTL, the common layer ETL, the common layer upper electrode, and the common layer organic protective layer of FIG. 18.
Figure 25 is a cross-sectional view of a panel according to one embodiment.

Hereinafter, with reference to the attached drawings, various embodiments of the present invention will be described in detail so that those skilled in the art can easily implement the present invention. The invention may be implemented in many different forms and is not limited to the embodiments described herein.

In order to clearly explain the present invention, parts that are not relevant to the description are omitted, and identical or similar components are assigned the same reference numerals throughout the specification.

In addition, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, so the present invention is not necessarily limited to what is shown. In the drawing, the thickness is enlarged to clearly express various layers and areas. And in the drawings, for convenience of explanation, the thicknesses of some layers and regions are exaggerated.

Additionally, when a part of a layer, membrane, region, plate, etc. is said to be “on” or “on” another part, this includes not only cases where it is “directly above” another part, but also cases where there is another part in between. . Conversely, when a part is said to be “right on top” of another part, it means that there is no other part in between. In addition, being “on” or “on” a reference part means being located above or below the reference part, and does not necessarily mean being located “above” or “on” the direction opposite to gravity. .

In addition, throughout the specification, when a part is said to "include" a certain component, this means that it may further include other components rather than excluding other components, unless specifically stated to the contrary.

In addition, throughout the specification, when referring to “on a plane,” this means when the target portion is viewed from above, and when referring to “in cross section,” this means when a cross section of the target portion is cut vertically and viewed from the side.

Hereinafter, the planar structure of the panel constituting the electroluminescent device according to an embodiment will be looked at through FIG. 1.

1 is a plan view of a panel according to one embodiment.

The panel constituting the electroluminescence device according to this embodiment may include an external buffer area 201, a display area 100, a light transmission area 210, and an inorganic-inorganic encapsulation junction area 251.

The display area 100 is an area where a plurality of pixels are arranged to display an image.

The light transmitting area 210 has a relatively higher light transmittance than the display area 100 or the external buffer area 201, and light enters the at least one optical member 10 located below or enters the optical member 10. This is the area from which light comes out. The optical member 10 may be a camera, flash, sensor, etc.

In this embodiment, the light transmitting area 210 has a non-hole structure. The size of the light-transmitting area 210 is larger than the pixel circuit area (PCZ; shown in FIG. 13) and is therefore different from the light-transmitting zone within the pixel for implementing a transparent display.

The external buffer area 201 is an area that completely surrounds the display area 100 and the light transmission area 210.

The inorganic-inorganic encapsulation junction region 251 has a structure that completely surrounds the external buffer region 201.

A portion of the external buffer area 201 extends between the display area 100 and the light transmission area 210 to have a structure that separates the display area 100 and the light transmission area 210 from each other.

The display area 100 has a structure that partially surrounds the light transmission area 210 .

Below, we will look at the cross-sectional structure of II-II' in FIG. 1.

FIG. 2 is a cross-sectional view taken along line II-II' of FIG. 1.

Referring to FIG. 2, the light transmitting area 210 includes a lower glass substrate 140, a planarization film 19, a lower extension of the planarization film 19a extending downward from the planarization film 19, and a pixel defining film ( 21), it may include a first spacer 21a extending upward from the pixel defining layer 21 and an upper glass substrate 150. The light-transmitting area 210 with this structure has no separate part that blocks light, so it has high transparency. The space between the upper glass substrate 150 and the first spacer 21a may be empty or may be filled with a filler having excellent light transmittance.

The portion corresponding to the light transmitting area 210 of the touch sensor structure 160 located on the upper glass substrate 150 is removed, and the light transmitting area 210 of the polarizing film 39 located on the touch sensor structure 160 is removed. ) can be removed. A transparent film may be formed on the upper glass substrate 150 to correspond to the light transmission area 210.

The planarization film 19 corresponding to the light transmission area 210 has a lower extension portion 19a of the planarization film. The planarization film lower extension portion 19a is formed by etching the lower inorganic multilayer film 26b to form at least one hole, and then filling the hole with the planarization film 19 to form the planarization film lower extension portion 19a. According to FIG. 2, the inorganic multilayer film 26b may be composed of a first inorganic layer 13, a second inorganic layer 15, and a third inorganic layer 17. Additionally, the inorganic multilayer film 26b and the lower glass substrate 140 are collectively referred to as the inorganic multilayer film structure 26a.

The first spacer 21a is located on the pixel defining layer 21 corresponding to the light transmission area 210. The first spacer 21a corresponds to the light transmission area 210, and the intermediate multilayer film 22, the common film upper electrode 23, and the common film organic protective film 24 are not formed on the first spacer 21a. Here, the intermediate multilayer film 22 includes a common film hole transport layer 22a, an individual film light emitting layer 22b, and a common film electron transport layer 22c. Depending on the embodiment, the layer with high transparency among the common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24 is located on the first spacer 21a. can do. Hereinafter, at least one of the common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24 may be referred to as a common film.

A plurality of pixels are formed in the display area 100, and one pixel includes a pixel circuit and a light emitting unit that receives current from the pixel circuit and emits light. The light emitting unit is divided based on the pixel defining layer 21, and the pixel defining layer 21 within the display area 100 may include a second spacer 21b extending upward.

The inorganic frit 250 and the upper glass substrate 150 serve as an upper encapsulation structure and prevent moisture from entering the organic light emitting layer from the outside. The joint area between the inorganic frit 250 and the third inorganic layer 17 corresponds to the inorganic-inorganic encapsulation joint area 251. In FIG. 2, the portion P of the upper surface of the third inorganic layer 17 in contact with the inorganic frit 250 is the inorganic surface of the inorganic multilayer film structure 26a including the lower glass substrate 140 and the inorganic multilayer film 26b. Corresponds to wealth (P). The inorganic multilayer structure 26a includes at least one lower inorganic encapsulation film extending over its entire lower surface. The lower glass substrate 140 may correspond to the lower inorganic encapsulation film. Only the inorganic layer exists between the inorganic surface portion P and the lower inorganic encapsulation film.

In the present invention, the display area 100 may be opaque. That is, the light transmission area 210 is larger than the pixel circuit area (PCZ) (shown in FIG. 13), which is the area occupied by the pixel circuit for driving each pixel, and is therefore formed within each pixel circuit area to implement a transparent display. It is different from the light-transmitting zone. For example, the pixel circuit area (PCZ) may have a rectangular shape of 25 μm (width) x 50 μm (length), but the light transmission area 210 may have a circular structure with a diameter of 3 mm. The first spacer 21a may have an area larger than the pixel circuit area PCZ, but the second spacer 21b may have an area smaller than the pixel circuit area PCZ.

In one embodiment, the light transmitting area 210 may have an area larger than one color unit composed of pixels of different colors to implement white color. For example, a color unit may include red pixels, green pixels, and blue pixels. In the light transmitting area 210 such as the “L” shape, “U” shape, or Ω shape shown in FIG. 1, the area of the light transmitting area 210 refers to the area substantially surrounded by the display area 100. It refers to the area. The fact that the display area 100 is opaque means that the display area 100 has insufficient light transmittance to be used as a transparent display, but does not mean that the light transmittance of the display area 100 is 0%. Additionally, the opaque display area 100 may be composed of an opaque sub-display area having a first area and a transparent sub-display area having a second area smaller than the first area and being completely or partially surrounded by the opaque sub-display area. there is. Additionally, a plurality of transparent display pixels may be formed in the light-transmitting area 210 separately from the opaque display area 100.

The through hole type refers to a case where through holes are formed in both the lower substrate and the lower structure, and the non-through hole type refers to a case where no through hole is formed in at least one of the lower substrate and the lower structure. .

The common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24 are present on the second spacer 21b, but are present on the first spacer 21a. You may not.

The lower electrode 20, which is an individual film, does not overlap the light transmission area 210. The lower electrode 20 may be formed of a low light transparency material or a reflective material.

The touch electrode structure 60 of the touch sensor structure 160 also does not overlap the light transmission area 210. The touch electrode structure 60 may be formed of a low light transparency material.

The polarizing film 39 also does not overlap the light transmitting area 210, and the polarizing film 39 has a low light transmitting characteristic. A color filter (C/F) may be employed instead of the polarizing film 39, in which case the light filtering areas (R, G, B) of the color filter and the light blocking member (B/M) located between each color. does not overlap with the light transmission area 210.

In FIG. 2 , the touch insulating structure 65 of the touch sensor structure 160 is shown to overlap the light transmission area 210. However, the touch insulating structure 65 may be partially removed to form a non-overlapping structure.

In FIG. 2, the upper glass substrate 150 and the first spacer 21a are shown to be spaced apart, but they may be in contact with each other or a filler having excellent light transmittance may be inserted between them.

In FIG. 2, the common organic protective layer 24 is shown not to cover the first spacer 21a, and in this case, light transmittance can be secured. Here, the common organic protective layer 24 is in contact with the upper electrode 23 and may be formed of a semiconductor or conductive organic material with a refractive index exceeding 1.8. The common organic protective layer 24 may have a light extraction enhancement function and an upper electrode physical protection function. The common organic protective film 24 may be formed through an evaporation deposition process rather than the PE-CVD method to prevent damage to the upper electrode 23.

Depending on the embodiment, the common organic protective layer 24 may be formed to cover the first spacer 21a. In this case, the common organic protective layer 24 can more firmly protect the upper electrode 23.

When the common layer organic protective layer 24 is formed not to cover the first spacer 21a, the mask of FIGS. 3 and 4 will be used when forming the common layer organic protective layer 24, and when it covers the first spacer 21a, the mask shown in FIGS. 3 and 4 will be used. When forming the common organic protective film 24, an open mask without part A in FIG. 3 can be used.

In FIG. 2, the first inorganic layer 13, the second inorganic layer 15, and the third inorganic layer 17 constituting the inorganic multilayer film 26b all have at least one recess in the inorganic multilayer film structure 26a. However, depending on the embodiment, only the second inorganic layer 15 and the third inorganic layer 17 may be etched, only the third inorganic layer 17 may be etched, or none of the inorganic layers may be etched. However, in the case where only the second inorganic layer 15 and the third inorganic layer 17 are etched, only the third inorganic layer 17 is etched, or neither inorganic layer is etched, the bottom of the first spacer 21a Structures that lower the light transmittance of the light transmission area 210, such as reflective wiring, thin film transistors (TFTs), capacitors, etc., are located directly on or inside the portion of the inorganic multilayer film 26b corresponding to the light transmission area 210. It is advantageous from the viewpoint of improving light transmittance to not position it.

The pixel defining portion of the pixel defining layer 21 has a height of h1, and the first spacer 21a and the second spacer 21b have a height of h2 that is higher than h1. Here, having h1 height means that the top surface is located at h1 height.

At least one of the pixel defining layer 21 and the planarization layer 19 may include an organic material having a thickness of about 0.025 mm and a transmittance of about 70% or more for light with a wavelength of about 550 nm and a yellow index of about 95 or less. . For example, the material is preferably an organic material that has a light transmittance of about 80% or more at a wavelength of about 550 nm at a thickness of about 0.025 mm and a yellowness index of about 20 or less.

Depending on the embodiment, the pixel defining layer 21 may use colored PI or transparent PI, and the planarization layer 19 may use acrylic resin. Colored PI includes PI with yellowish characteristics.

Depending on the embodiment, both the pixel defining layer 21 and the planarization layer 19 may use colored PI or transparent PI.

Depending on the embodiment, the pixel defining layer 21 and the planarization layer 19 may both use acrylic resin.

Depending on the embodiment, at least one of the pixel defining layer 21 and the planarization layer 19 may use a siloxane organic material and/or a silazane organic material.

Depending on the embodiment, a portion (indicated by Can be filled with filler. In this case, the resin must be filled to have the same height as the previous first spacer 21a so that the resin can function as a spacer, which was performed by the first spacer 21a.

When the inorganic multilayer film 26b is present in the light transmission area 210, a recess or a hole penetrating the lower glass substrate 140 is formed in the lower part of the lower glass substrate 140 to insert an optical member. can do.

If a hole is formed in the lower glass substrate 140 even though the inorganic multilayer film 26b is not present in the light transmission area 210, it is impossible to prevent penetration of moisture or the like. Therefore, if the inorganic multilayer film 26b does not exist in the light transmission area 210, a recess can be formed in the lower surface of the lower glass substrate 140 to form an insertion structure for the optical member.

The first inorganic layer 13 and the third inorganic layer 17 may include silicon nitride, and the second inorganic layer 15 may include silicon oxide. Here, silicon nitride is a concept that includes silicon oxynitride. Examples of silicon nitride include SiNx and SiON, and examples of silicon oxide include SiO ₂ .

Below, we will look at the mask used in this embodiment through FIGS. 3 and 4.

First, let's look at the mask structure in FIG. 3.

Figure 3 shows an evaporation deposition process used to form the common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24 of Figure 2. This is a diagram showing the shape of an open mask for process.

During the evaporation deposition process to form the common film electromagnetic transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24, area A of the open mask of FIG. 3 is shown. 2 adjacent to the first spacer 21a, and on the first spacer 21a, a common film hole transport layer 22a, a common film electron transport layer 22c, a common film upper electrode 23, and a common film organic protective film 24. ) is not formed.

Therefore, the light transmission that may occur when the common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24 are formed on the first spacer 21a A decrease in light transmittance of the area 210 can be prevented.

Below, we will look at the mask structure of FIG. 4.

Figure 4 shows an evaporation deposition process used to form the common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24 of Figure 2. This is a diagram showing another shape of an open mask for process.

During the evaporation deposition process to form the common film electromagnetic transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24, area A of the open mask of FIG. 4 is shown. 2 adjacent to the first spacer 21a, and on the first spacer 21a, a common film hole transport layer 22a, a common film electron transport layer 22c, a common film upper electrode 23, and a common film organic protective film 24. ) is not formed.

Therefore, the light transmission that may occur when the common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24 are formed on the first spacer 21a A decrease in light transmittance of the area 210 can be prevented.

A common layer is not formed on the portion of the second spacer 21b that overlaps the B region. A common film is formed on the portion of the second spacer 21b that overlaps the hole H. A common film is formed on the portion of the second spacer 21b that overlaps the C region. The second spacer 21b overlapping the B region may not be formed. The second spacer 21b overlapping the hole H may not be formed. The second spacer 21b overlapping the B area and the second spacer 21b overlapping the hole H may not be formed.

Area B having multiple holes (H) may be extended to occupy all of area C.

If area A is circular near area A, an auxiliary hole (H1) may be additionally formed so that area A may have a circular shape.

Hereinafter, the shape of the hole H according to various embodiments will be examined through FIGS. 5 to 9.

5 to 9 are diagrams showing the shape of a hole that can be formed in area B of FIG. 4.

The hole structure that can be used in the open mask shown in FIG. 4 may have various shapes as shown in FIGS. 5 to 9.

First, Figure 5 shows an embodiment in which each hole H has a hexagonal structure and an overall honeycomb shape.

In FIG. 6, the shape of each hole (H) has a square structure, and in FIG. 7, the shape of each hole (H) has a rectangular structure. In FIG. 6, the square holes H are arranged in rows and columns, but in FIG. 7, the rectangular holes H are arranged in rows but are misaligned in the columns.

In the embodiment of FIG. 8, each hole H has a triangular shape, and in the embodiment of FIG. 9, each hole H has a circular shape, and an auxiliary hole H2 is additionally formed.

As shown in the embodiments of FIGS. 5 to 8, the holes H may have various shapes such as hexagons, squares, or triangles so that the spacing between the holes H is constant.

When the shape of the hole H is circular as shown in FIG. 9, a non-circular auxiliary hole H2 such as a triangle can be additionally formed in the space between the circular shapes.

The hole H may be formed to vertically correspond to the light emitting area of each pixel.

In addition, the size of the hole (H) is determined by using the shadow effect that occurs during evaporation and deposition of organic materials using a shadow mask, that is, the phenomenon in which organic materials are deposited to a certain portion around the hole, and the common film electron transport layer 22a, the common film electrons. It is sufficient if the transport layer 22c and the common film upper electrode 23 can be formed in a common film structure.

However, when determining the size of the hole (H), in the case of the common film hole transport layer 22a or the common film electron transport layer 22c, the size of the hole (H) may be determined so that it is formed as an individual film without necessarily forming a common film. However, in the case of the common film upper electrode 23, it is desirable to determine the size of the hole H so that it is formed as a common film.

Hereinafter, the planar structure of a panel constituting an electroluminescent device according to another embodiment will be looked at through FIGS. 10 and 11.

10 and 11 are plan views showing the relationship between the display area 100, the first spacer 21a, the third spacer 21c, the fourth spacer 21d, and the inorganic-inorganic bag joint area 251.

First, referring to FIG. 10, the third spacer 21c is connected between the first spacer 21a and the fourth spacer 21d. The first spacer 21a is formed to correspond to the light transmission area 210. Additionally, the fourth spacer 21d is located inside the inorganic-inorganic bag joint area 251 and is formed along the outer edge of the display area 100. That is, the fourth spacer 21d has a shape that surrounds the display area 100. And the fourth spacer 21d is surrounded by the inorganic-inorganic encapsulation joint area 251. Meanwhile, the third spacer 21c has a structure that extends from the fourth spacer 21d toward the light transmission area 210 and is connected to the first spacer 21a.

The third spacer 21c and the fourth spacer 21d may have the same height as the first spacer 21a. The first spacer 21a, the third spacer 21c, and the fourth spacer 21d are formed integrally.

10 and 3, the A region of FIG. 3 corresponds to or is adjacent to the first spacer 21a, the P region corresponds to or adjacent to the fourth spacer 21d, and the A region and The area located between the P areas corresponds to or is adjacent to the third spacer 21c.

Meanwhile, referring to FIG. 11, the first spacer 21a and the third spacer 21c are connected. The inorganic-inorganic encapsulation joint area 251 surrounds the display area 100 while passing between the third spacer 21c and the fourth spacer 21d. The third spacer 21c and the fourth spacer 21d may have the same height as the first spacer 21a. The first spacer 21a and the third spacer 21c are formed integrally. The fourth spacer 21d has a shape surrounding the inorganic-inorganic joint encapsulation area 251.

11 and 3, the A region of FIG. 3 corresponds to or is adjacent to the first spacer 21a, the P region corresponds to or adjacent to the fourth spacer 21d, and the A region and The area located between the P areas corresponds to or is adjacent to the third spacer 21c.

Below, we will look at the mask according to one embodiment through FIG. 12.

FIG. 12 shows the shape of an individual mask for an evaporation deposition process used when forming the individual film emitting layer 22b of FIG. 2.

According to the individual mask according to the embodiment of FIG. 12, during the evaporation deposition process to form the individual film light emitting layer 22b, area A of the open mask is adjacent to the first spacer 21a of FIG. 2, so that the first spacer 21a ) The individual film light emitting layer 22b is not formed on it.

Accordingly, it is possible to prevent a decrease in the light transmittance of the light transmitting area 210 that may occur when the individual film light emitting layer 22b is formed on the first spacer 21a. The individual film emitting layer 22b has a color, and when it contains a transition metal, transmittance is excessively reduced, so it is better not to form the individual film emitting layer 22b in the light transmitting area 210.

Additionally, during the evaporation deposition process to form the individual light emitting layer 22b, area B of the open mask is located adjacent to the second spacer 21b of FIG. 2. Accordingly, the developed film emission layer 22b is not formed even on the second spacer 21b.

Hereinafter, we will look at a method of preventing the problem of light interference from the individual light emitting layer 22b to the optical member through FIG. 13.

FIG. 13 is a diagram illustrating an embodiment of portion Y of FIG. 2.

In Figure 13, the structure of the thin film transistor is shown in the pixel circuit region (PCZ). The thin film transistor according to one embodiment includes a semiconductor layer 12, a gate electrode 14, a source electrode 18s, and a drain electrode 18d located on the first inorganic layer 13. The semiconductor layer 12 includes a channel 12c, a source region 12s, and a drain region 12d, and the source region 12s and the drain region 12d are located on both sides of the channel 12c. The semiconductor layer 12 is covered with a second inorganic layer 15, and a gate electrode 14 is located on the second inorganic layer 15. The gate electrode 14 may be located only on top of the channel 12c of the semiconductor layer 12. The gate electrode 14 is covered by the third inorganic layer 17. The third inorganic layer 17 and the second inorganic layer 15 have openings that expose the source region 12s and drain region 12d of the semiconductor layer 12. Through the opening, the source region 12s is electrically connected to the source electrode 18s, and the drain region 12d is electrically connected to the drain electrode 18d. One pixel may include a plurality of thin film transistors, and one of the thin film transistors may be electrically connected to the pixel electrode 20. The pixel electrode 20 may be connected to the drain electrode 18d of the thin film transistor. An organic light emitting layer is located on the pixel electrode 20, and the organic light emitting layer may include a hole transport layer 22a, a light emitting layer 22b, and an electron transport layer 22c. An upper electrode 23 is located on the organic light emitting layer. Due to the current flowing between the pixel electrode 20 and the upper electrode 23, the light emitting layer 22b of the organic light emitting layers emits light and displays luminance.

The first reflective member 18r is formed in a triple-layer structure using a reflective material such as Ti/Al/Ti and is formed on the same layer as the source electrode 18s and the drain electrode 18d through the same process. In addition, the second reflective member 20r is formed through the same process on the same layer as the lower electrode 20, which contains a reflective material such as ITO/Ag/ITO and is formed in a triple layer structure.

The first reflective member 18r and the second reflective member 20r contact each other and form the light blocking structure 170. The light blocking structure 170 may block light from the light emitting layer 22b or external light that may enter the optical member 10 through the planarization film 19.

The second reflective member 20r may have a plurality of holes, which serve as passages for outgassing that occurs when the organic material is cured when the planarization film 19 is formed of an organic material.

The first reflective member 18r may be omitted depending on the embodiment, and in this case, the second reflective member 20r is connected to the inorganic multilayer film 26b.

The common membrane upper electrode 23 contains magnesium (Mg) and silver (Ag) and may have a thin semi-transmissive structure. Since the common film upper electrode 23 has semi-transmissive characteristics, it has a light blocking effect compared to a single transparent electrode, but has a less light blocking effect than a reflective electrode, so the upper electrode 23 is formed on the pixel defining film 21 above the planarization film 19. 1 At least one groove 24a is formed, or at least one second groove 24b is formed on the second reflective member 20r to more effectively block light that can enter the optical member through the pixel defining film 21. You can.

This kind of light blocking is achieved by forming a common upper electrode 23 on the top and inside (including the sidewalls) of the first groove 24a and the second groove 24b, so that each groove 24a and 24b has two sidewalls. This is because light blocking occurs twice due to the common layer upper electrode 23 formed by using . That is, even though the common layer upper electrode 23 has semi-transmissive characteristics, light is reduced twice for each groove 24a and 24b, and light is almost blocked after passing through all grooves 24a and 24b.

The first reflective member 18r, the second reflective member 20r, the first groove 24a, and the second groove 24b are formed between the display area 100 and the light transparent area 210. ) It is formed in a structure that extends flatly along the periphery to block light transmitted to the light transmission area 210.

When the common layer upper electrode 23 contacts the second reflective member 20r, the second reflective member 20r may also serve as an auxiliary wiring that supplies power to the common layer upper electrode 23. Alternatively, the second reflective member 20r may be electrically disconnected.

In order for the common film upper electrode 23 to contact the second reflective member 20r, the shape of the mask forming the common film upper electrode 23 forms a common film electron transport layer 22c and a common film hole transport layer 22a. The area A shown in FIG. 3 can be formed smaller than in the case of doing so.

Although the common layer organic protective layer 24 is omitted in FIG. 13, it may be formed on the common layer upper electrode 23. Additionally, depending on the embodiment, a common inorganic protective layer (not shown) may be additionally formed on the common organic protective layer 24.

At least one light blocking structure 170 may be formed on the entire panel to enhance light blocking.

In another embodiment, in order to reduce light interference caused by light directed from the individual film light-emitting layer 22b to the optical member 10, the distance between the individual film light-emitting layer 22b and the light transmission area 210 is made relatively large. It is also possible to reduce light inflow into the optical member.

In another embodiment, the pixels near the spacer 21a for the common film may be formed as normally black, or may be displayed black when the optical member 10 is used, thereby reducing light influx.

In FIG. 13, the position of the first groove 24a is shown farther from the light transmission area 210 than the second groove 24b. However, unlike FIG. 13, the positions of the first groove 24a and the second groove 24b are can be interchanged Additionally, the first groove 24a may be formed both inside and outside the second groove 24b.

Hereinafter, a modified embodiment of FIG. 13 will be examined through FIG. 14.

FIG. 14 is a cross-sectional view showing a modification of FIG. 13, and FIG. 14 is not an embodiment exclusively related to FIG. 13, but is a supplementary embodiment.

The first groove 24a extends to the planarization film 19 to block light that can be transmitted to the optical member 10 through the planarization film 19, but there is a void inside the first groove 24a. This formation has the effect of blocking light twice by the common layer upper electrode 23.

Although not shown in FIG. 14 , the second reflective member 20r is exposed on the bottom surface of the first groove 24a, and the second reflective member 20r may be connected to the common layer upper electrode 23. The power delivered to the second reflective member 20r is provided to the common layer upper electrode 23, so that the second reflective member 20r experiences a voltage drop phenomenon (IR (=V) drop) of the common layer upper electrode 23. It can also serve as an auxiliary electrode to reduce .

An empty space (void) is formed inside the second reflective member 20r, and the empty space (void) is filled with the pixel defining film 21, so light is transmitted twice by the second reflective member 20r. It is blocked and light is not transmitted to the light transmission area 210.

Like the second reflective member 20r shown in FIG. 14, the second reflective member 20r shown in FIG. 13 may also have a void formed on the inside. In this case, the light is transmitted from the planarization film 19 to the optical member ( 10) Light cannot enter and is blocked.

Below, we will look at a panel according to an embodiment through FIG. 15.

Figure 15 is a cross-sectional view of a panel according to one embodiment.

In FIG. 15, a multilayer encapsulation film 31 is used instead of the “inorganic frit 250 and the upper glass substrate 150” of FIG. 2, and a lower transparent organic polymer substrate 140a is used instead of the lower glass substrate 140. Unlike the upper glass substrate 150 and the lower glass substrate 140 in FIG. 2, the lower transparent organic polymer substrate 140a in FIG. 15 uses a substrate made of polyimide (PI) or plastic material with flexible characteristics. . Here, the multilayer encapsulation film 31 includes two inorganic layers (a first inorganic encapsulation layer 31a and a second inorganic encapsulation layer 31c) and one organic layer 31b. One organic layer 31b is located between two inorganic layers (the first inorganic encapsulation layer 31a and the second inorganic encapsulation layer 31c).

It can be manufactured by placing a glass sacrificial substrate (not shown) under the lower transparent organic polymer substrate 140a during the manufacturing process, but it is removed in the final step so that the lower transparent organic polymer substrate 140a is located at the bottom.

The light transmitting area 210 according to FIG. 15 includes a lower transparent organic polymer substrate 140a, a lower extension of the planarization film 19a, a planarization film 19, a pixel defining film 21, a first spacer 21a, and It contains a multilayer encapsulation film 31, and as a result has the characteristic of increased transparency.

In Figure 15, the inorganic upper surface of the third inorganic layer 17 located at the uppermost part of the inorganic multilayer film 26b and the inorganic lower surface of the first encapsulating inorganic layer 31a located at the lowermost part of the multilayer encapsulating film 31 are in contact with the area ( K) corresponds to an inorganic-inorganic encapsulation joint area 251 such as the inorganic frit 250 shown in FIG. 2. Here, the inorganic upper surface of the third inorganic layer 17 may be positioned no higher than the plane where the lower surface of the lower extension part 19a of the planarization film is located.

In Figure 15, when the first inorganic layer 13, the second inorganic layer 15, and the third inorganic layer 17 are all etched in the light transmission area 210, the organic polymer substrate 140a, which is an organic material rather than an inorganic material, is formed. exposed. Accordingly, moisture and oxygen are supplied directly into the device through the organic polymer substrate 140a. Therefore, the first inorganic layer 13, the second inorganic layer 15, and the third inorganic layer 17 must not all be etched. Accordingly, only the third inorganic layer 17 is etched, or only the second inorganic layer 15 and the third inorganic layer 17 are etched, or the first inorganic layer 13, the second inorganic layer 15, and the third inorganic layer 13 are etched. All of the inorganic layer 17 may not be etched.

Depending on the embodiment, when at least one recess is formed in the inorganic multilayer film 26b including the first inorganic layer 13, the second inorganic layer 15, and the third inorganic layer 17, the recess is The thickness T2 of the unformed inorganic multilayer film 26b may be thicker than the thickness T1 of the inorganic multilayer film 26b with the recess formed.

Depending on the embodiment, the optical member 10 may be inserted by forming a recess or hole in the lower transparent organic polymer substrate 140a.

The first inorganic layer 13 and the third inorganic layer 17 may include silicon nitride, and the second inorganic layer 15 may include silicon oxide. In this case, the recess portion can be formed so that only the inorganic layer containing silicon nitride remains. Alternatively, if only the inorganic layer containing silicon oxide remains in the recess portion, silicon oxide may not be desirable because its role in preventing moisture infiltration is weaker than that of silicon nitride. In particular, when an organic polymer substrate 140a with poor moisture permeation prevention properties is used under the inorganic multilayer film 26b as shown in FIG. 15, it is advantageous to leave an inorganic film containing silicon nitride in the recess portion.

Although not shown in FIG. 15, the second inorganic layer 15 containing silicon oxide is removed from the recess portion, and the first inorganic layer 13 and third inorganic layer 17 containing silicon nitride are removed from the recessed portion. It may not be removed from the vicinity of Seth. In this case, the first inorganic layer 13 and the third inorganic layer 17 come into direct contact near the recess, thereby improving the sealing function. Additionally, it has the advantage of reducing the Bragg mirror phenomenon that occurs when several films with different refractive indices are stacked.

Hereinafter, the planar structure of the panel with different shapes of the light transmitting area 210 will be examined through FIG. 16.

Figure 16 is a panel plan view according to one embodiment.

The display panel shown in FIG. 16 is substantially the same as the display panel shown in FIG. 1 except that it has a light transmitting area 210 of a size where a plurality of optical members 10 shown in FIG. 2 can be disposed. .

When at least two optical members 10 are located on the back of the light transmission area 210 of FIG. 16, it may further include a light blocking structure (not shown) disposed in the area between the two optical members 10. You can. In this case, the light blocking structure may have substantially the same structure as the light blocking structure 170 shown in FIG. 13 or 14.

Hereinafter, the planar structure of the panel with different positions of the light transmission area 210 will be examined through FIG. 17.

Figure 17 is a panel plan view according to one embodiment.

The embodiment of FIG. 17 further includes an internal buffer area 202. That is, the internal buffer area 202 completely surrounds the light transmission area 210, and the internal buffer area 202 has a structure that is completely surrounded by the display area 100. Additionally, the external buffer area 201 completely surrounds the display area 100, and the inorganic-inorganic encapsulation junction area 251 completely surrounds the external buffer area 201.

Hereinafter, an embodiment will be looked at in more detail through a cross-sectional structure cut along the cross-section line XVII-XVII' of FIG. 17.

FIG. 18 is a cross-sectional view taken along line XVII-XVII' of FIG. 17.

In FIG. 18 , some descriptions of portions that are substantially the same as those described in FIG. 2 are omitted.

At least one hole corresponding to the light transmitting area 210 may be formed in the inorganic multilayer film 26b. This is because the lower glass substrate 140 is an inorganic material such as glass and thus has excellent encapsulation properties, unlike organic materials.

Meanwhile, in another embodiment, when the first inorganic layer 13 is not removed from the light transmission area 210 and only the second inorganic layer 15 and the third inorganic layer 17 are removed, the inorganic multilayer film 26b may have a shape having at least one recess in the light transmitting area 210. Specifically, the inorganic multilayer film 26b may have a first thickness in the light transmission area 210 and a second thickness thicker than the first thickness in areas other than the light transmission area 210.

Below, we will look at the open mask that can be used in the embodiment of FIG. 18 through FIGS. 19 to 21.

Figure 19 shows an open mask for the evaporation deposition process used when forming the common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24 of Figure 18. This is a drawing showing the shape of.

During the evaporation deposition process for forming the common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24, area A of the open mask is the first area of FIG. 18. Adjacent to the spacer 21a, a common film hole transport layer 22a, a common film electron transport layer 22c, a common film upper electrode 23, and a common film organic protective film 24 are not formed on the first spacer 21a. It won't happen. Therefore, the light that can be generated when the common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24 are formed on the first spacer 21a A decrease in light transmittance of the transmission area 210 can be prevented.

In the embodiment of Figure 19, a connection bar 180 is shown. A plurality of holes (H) are formed in the connection bar 180. Even in the area covered by the connecting bar 180 through the hole (H), the deposition material that has entered through the hole (H) spreads to some extent due to the shadow effect, forming the common film electron transport layer 22a, the common film electron transport layer 22c, A common layer upper electrode 23 and a common layer organic protective layer 24 may be deposited.

A common film hole transport layer 22a, a common film electron transport layer 22c, a common film upper electrode 23, and a common film organic protective film 24 are formed on the part of the second spacer 21b that overlaps the connecting bar 180. It does not, and on the part of the second spacer 21b that overlaps the hole H, a common film hole transport layer 22a, a common film electron transport layer 22c, a common film upper electrode 23, and a common film organic protective film 24 are formed. This is formed. A common film hole transport layer 22a, a common film electron transport layer 22c, a common film upper electrode 23, and a common film organic protective film 24 are formed on the second spacer 21b that overlaps the C region.

In FIG. 19, the connecting bar is connected in the

Below, we will look at an open mask of another embodiment through FIG. 20.

Figure 20 shows an open mask for the evaporation deposition process used when forming the common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24 of Figure 18. This is a drawing showing the shape of.

Compared to the open mask described in FIG. 19, the open mask in FIG. 20 is substantially the same except for having a single connection bar 180. The single connection bar 180 is located between the P area and the A area.

The width of the connecting bar 180 shown in FIG. 20 is shown to be larger than the diameter of area A, but is not limited thereto and may be the same or smaller.

The connection bar 180 is preferably connected to the peripheral portion closest to area A.

Depending on the embodiment, the hole H may not be formed in area D of FIG. 20. In this case, the Ω-shaped display area 100 shown in FIG. 1 can be implemented.

Below, we will look at an open mask of another embodiment through FIG. 21.

Figure 21 shows an open mask for the evaporation deposition process used when forming the common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24 of Figure 18. This is a drawing showing another shape.

During the evaporation deposition process for forming the common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24, area A of the open mask is the first area of FIG. 18. It is adjacent to the spacer 21a so that the common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24 are not formed on the first spacer 21a. do. Therefore, the light transmission that may occur when the common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24 are formed on the first spacer 21a A decrease in light transmittance of the area 210 can be prevented.

In the area surrounding area A, a B portion (rigid portion) having a plurality of holes (H) is formed, and through the holes (H), a common membrane electron transport layer (22a), a common membrane electron transport layer (22c), and a common membrane upper electrode ( 23) and a common organic protective layer 24 may be deposited.

The common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24 are not formed on the part B of the second spacer 21b that overlaps. A common film hole transport layer 22a, a common film electron transport layer 22c, a common film upper electrode 23, and a common film organic protective film 24 are formed on the second spacer 21b that overlaps the hole H.

Hereinafter, the top view of the panel when using the mask of FIGS. 19 to 21 will be looked at through FIGS. 22 and 23.

22 and 23 show the display area 100, the first spacer 21a, the fourth spacer 21d, and the inorganic-inorganic bag joint area 251 when using the open mask of FIGS. 19, 20, and 21. It is a floor plan showing the relationship between .

First, referring to FIG. 22, the first spacer 21a is surrounded by the display area 100. The inorganic-inorganic encapsulation junction area 251 surrounds the display area 100. The fourth spacer 21d surrounds the weapon-inorganic bag joint area 251. The first spacer 21a and the fourth spacer 21d have substantially the same height. Area A of FIGS. 19 to 21 corresponds to or is adjacent to the first spacer 21a, and area P corresponds to or adjacent to the fourth spacer 21d.

Meanwhile, referring to FIG. 23, the first spacer 21a is surrounded by the display area 100. The display area 100 is surrounded by the fourth spacer 21d. The fourth spacer 21d has substantially the same height as the first spacer 21a. The fourth spacer 21d is surrounded by an inorganic-inorganic encapsulation joint area 251. The fourth spacer 21d surrounds the weapon-inorganic bag joint area 251. The first spacer 21a and the fourth spacer 21d have substantially the same height. 19 to 21, area A corresponds to or is adjacent to the first spacer 21a, and area P corresponds to or adjacent to the fourth spacer 21d.

Below, we will look at the open mask for FIG. 18 according to an embodiment through FIG. 24.

Figure 24 shows an open mask for the evaporation deposition process used when forming the common film hole transport layer 22a, the common film electron transport layer 22c, the common film upper electrode 23, and the common film organic protective film 24 of Figure 18. This is a drawing showing another shape.

When using the open mask shown in FIG. 24, a common film hole transport layer 22a, a common film electron transport layer 22c, a common film upper electrode 23, and a common film organic protective film 24 are formed on the common film spacer 21a of Figure 18. ) is located, but if the common film electron transport layer 22a, the common film electron transport layer 22c, and the common film organic protective film 24 are organic films, and the common film upper electrode 23 is also a semi-transmissive electrode for top emission, , the light transmittance of the light transmission area 210 may not be excessively reduced. Here, since the individual film light emitting layer 22b uses an individual mask similar to the individual mask shown in FIG. 12 except that the location of area A is different, the individual film light emitting layer 22b is not formed on the first spacer 21a. Therefore, an open mask as shown in Figure 24 can be used.

Hereinafter, another embodiment corresponding to FIG. 18 will be looked at through FIG. 25.

Figure 25 is a cross-sectional view of a panel according to one embodiment.

FIG. 25 shows an implementation in which a multilayer encapsulation film 31 is adopted instead of the “inorganic frit 250 and the upper glass substrate 150” of FIG. 18, and a lower transparent organic polymer substrate 140a is adopted instead of the lower glass substrate 140. Yes. Except for this, FIG. 25 is substantially the same as FIG. 18, and description of the same parts will be omitted.

In the embodiment of FIG. 25, the thickness T2 of the first inorganic layer 13, the second inorganic layer 15, and the third inorganic layer 17 in the inorganic multilayer film 26b is the inorganic multilayer film 26b in which the recess is formed. ) may be thicker than the thickness (T1).

Although an inorganic protective layer is not shown on the common organic protective layer 24 in FIG. 25 , an inorganic protective layer may be formed on the common organic protective layer 24. The inorganic protective film may be formed of a semiconductor or conductive film such as LiF. Since this is a material capable of evaporation deposition, when an inorganic protective film is formed through an evaporation deposition process and the subsequent first encapsulation inorganic layer 31a is formed through a PE-CVD process, plasma is formed on the common film upper electrode 23. It is possible to prevent the work function of the common layer upper electrode 23 from changing by causing damage to it. Also, in this case, the inorganic protective film is in contact with the common organic protective film 24. The inorganic protective film has a common film structure and has a structure that covers the spacer 21a for the common film, so it can firmly protect the upper electrode 23. Alternatively, it may have a structure that does not cover the spacer 21a for the common layer, and in this case, the light transmittance of the light transmitting area 210 is improved. When covering the common film spacer 21a, the mask shown in FIG. 24 can be used, and when not covering the common film spacer 21a, it can be formed by using the mask illustrated in FIGS. 19 to 21.

According to an embodiment of the present invention, the electroluminescent device includes each light transmission area 210 among the light transmission area 210 of FIG. 1, the light transmission area 210 of FIG. 16, and the light transmission area 210 of FIG. 17. Two or more can be formed. Additionally, differently from this, the electroluminescent device may include at least two different types of the light transmission area 210 of FIG. 1, the light transmission area 210 of FIG. 16, and the light transmission area 210 of FIG. 17. It can also be formed.

Although the embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concept of the present invention defined in the following claims are also possible. It falls within the scope of rights.

10: optical member 100: display area
201: external buffer area 202: internal buffer area
210: light transmission area 250: frit
251: Weapon-weapon bag junction area
140: lower substrate 140a: organic polymer substrate
150: upper substrate 160: touch sensor structure
170: Light blocking structure 60: Touch electrode structure
65: touch insulation structure 180: connection bar
H: Hole H1, H2: Auxiliary hole
P: Inorganic surface area PCZ: Pixel circuit area
13: first inorganic layer 15: second inorganic layer
17: third inorganic layer 26a: inorganic multilayer film structure
26b: Inorganic multilayer film 18d: Drain electrode
18s: source electrode 18r: first reflection member
20r: second reflection member 19: planarization film
19a: flattening film lower extension 20: lower electrode
21: Pixel definition film 21a. 21b, 21c, 21d: spacers
22a: common film electroporation transport layer 22b: individual film light emitting layer
22c: common membrane electron transport layer 23: common membrane upper electrode
24: common film organic protective film 24a: first groove
24b: second groove 31: multilayer encapsulation film
31a: first bag inorganic layer 31b: organic layer
31c: second inorganic encapsulation layer 39: polarizing film

Claims (20)

substructure; and
It includes an encapsulation structure located on the lower structure,
The substructure:
inorganic multilayer film;
a transparent planarization film located on the inorganic multilayer film;
a reflective electrode located on the planarization film and being an individual film;
a transparent pixel defining layer positioned on the planarization layer, including a pixel defining portion covering a side of the reflecting electrode, and a first spacer that is not positioned below the reflecting electrode and has a height greater than the pixel defining portion;
an intermediate multilayer film located on the reflective electrode and having at least one intermediate common film; and
It is located on the intermediate multilayer film and includes a translucent electrode that is a common film,
The lower structure has a light transmitting area and a display area surrounding at least a portion of the light transmitting area,
The first spacer and a portion of the planarization film located below the first spacer are included in the light transmission area,
An electroluminescent unit including the reflective electrode, the intermediate multilayer film, and the translucent electrode is included in the display area,
At least one of the intermediate common layer and the translucent electrode does not cover the first spacer,
The lower structure is located on the translucent electrode and further includes a protective film that is a semiconductor or conductive common film,
The electroluminescent device wherein the protective film does not cover the first spacer. According to claim 1,
The pixel defining layer further includes a second spacer having the same height as the first spacer and a smaller area than the first spacer,
The intermediate multilayer film further includes at least one intermediate individual film,
The intermediate individual film does not cover the first and second spacers,
The intermediate common layer and the translucent electrode cover the second spacer. According to paragraph 1,
The lower structure further includes a substrate positioned below the inorganic multilayer film,
The inorganic multilayer film is located below the first spacer and has at least one recess or at least one hole filled with the planarization film. delete According to paragraph 1,
The lower structure has a buffer area between the display area and the light transmissive area and has at least a portion extending along an outer edge of the light transmissive area to separate the display area from the light transmissive area,
The lower structure has an inorganic surface portion completely surrounding the display area and the light transmission area,
The encapsulation structure has an inorganic lower surface,
The electroluminescent device wherein the inorganic lower surface of the encapsulation structure is in contact with the inorganic surface portion of the lower structure to form an inorganic-inorganic encapsulation junction area completely surrounding the display area and the light transmission area. substructure; and
It includes an encapsulation structure located on the lower structure,
The substructure:
display area;
a light transmitting area in the form of a non-through hole that is at least partially surrounded by the display area; and
a buffer area extending between the display area and the light transmissive area along an outer edge of the light transmissive area and having at least a portion separating the display area and the light transmissive area;
The lower structure is an electroluminescent device including a light blocking structure extending from the at least part of the buffer area along the outer edge of the light transmission area. According to clause 6,
The substructure:
inorganic multilayer film;
a transparent planarization film located on the inorganic multilayer film;
a reflective electrode located on the planarization film and being an individual film;
a transparent pixel defining layer covering a side of the reflective electrode and positioned on the planarization layer;
an intermediate multilayer film located on the reflective electrode; and
It is located on the intermediate multilayer film and includes a translucent electrode that is a common film,
The pixel defining layer has a sidewall extending along the outer edge of the light transmitting area in the at least part of the buffer area,
The light blocking structure extends on the pixel defining layer to cover the sidewall of the pixel defining layer and includes a translucent member integral with the translucent electrode. According to clause 6,
The substructure:
inorganic multilayer film;
a transparent planarization film located on the inorganic multilayer film;
a reflective electrode located on the planarization film and being an individual film;
a transparent pixel defining layer covering a side of the reflective electrode and positioned on the planarization layer;
an intermediate multilayer film located on the reflective electrode; and
It is located on the intermediate multilayer film and includes a translucent electrode that is a common film,
The planarization film and the pixel defining film have sidewalls extending along the perimeter of the light transmission area in the at least part of the buffer area,
The light blocking structure extends to cover the sidewall on the planarization layer and the pixel defining layer and includes a translucent member integral with the translucent electrode. According to clause 8,
The light blocking structure further includes a reflective member positioned on the inorganic multilayer film,
The electroluminescent device wherein the side wall is in contact with the upper surface of the reflective member so that the translucent member is in contact with the upper surface of the reflective member. According to clause 9,
The intermediate multilayer film has at least one intermediate common film,
An electroluminescent device wherein a side of the translucent member is closer to the light transmission area than a side of the intermediate common layer. According to clause 6,
The substructure:
inorganic multilayer film; and
It is located on the inorganic multilayer film and includes a transparent planarization film,
The light blocking structure is an electroluminescence device including a first reflective member located on the planarization film. According to clause 11,
The substructure:
a reflective electrode located on the planarization film and being an individual film;
a transparent pixel defining layer covering a side of the reflective electrode and positioned on the planarization layer;
an intermediate multilayer film located on the reflective electrode; and
Further comprising a translucent electrode located on the intermediate multilayer film and being a common film,
The planarization film has a first sidewall extending along the outer edge of the light transmission area in the at least part of the buffer area,
The first reflective member extends on the planarization film to cover the first sidewall. According to clause 12,
The light blocking structure further includes a second reflective member positioned on the inorganic multilayer film,
The first side wall is in contact with the upper surface of the second reflective member so that the first reflective member is in contact with the upper surface of the second reflective member. According to clause 12,
The pixel defining layer has a second sidewall extending along the outer edge of the light transmitting area in the at least part of the buffer area,
The light blocking structure further includes a translucent member that extends on the pixel defining layer to cover the second sidewall and is integrated with the translucent electrode;
The electroluminescent device wherein the second side wall is in contact with the upper surface of the first reflective member so that the translucent member is in contact with the upper surface of the first reflective member. According to clause 14,
The intermediate multilayer film includes at least one intermediate common film,
An electroluminescent device wherein a side of the translucent member is closer to the light transmission area than a side of the intermediate common layer. According to clause 11,
The first reflective member has at least one hole. According to clause 6,
The substructure:
Inorganic multilayer film structure;
a transparent planarization film positioned on the inorganic multilayer film structure;
a reflective electrode located on the planarization film and being an individual film;
a transparent pixel defining layer covering a side of the reflective electrode and positioned on the planarization layer;
an intermediate multilayer film located on the reflective electrode; and
It is located on the intermediate multilayer film and includes a translucent electrode that is a common film,
An electroluminescent device wherein at least one recess is formed in the inorganic multilayer structure, corresponding to the light transmission area, and filled with the planarization film. A lower structure including a substrate containing glass or an organic polymer and an inorganic multilayer film positioned on the substrate; and
It includes an encapsulation structure located on the lower structure,
The lower structure includes a display area defined inside the outer edge of the inorganic multilayer film when viewed in plan; and
Having a light transmission area in the form of a non-through hole defined inside the outer perimeter of the inorganic multilayer film when viewed in plan, and at least partially surrounded by the display area,
At least one recess corresponding to the light transmission area is formed on the inorganic multilayer film,
The display area is opaque,
The electroluminescent device wherein the light transmitting area in the form of a non-penetrating hole does not have a hole penetrating the substrate. According to clause 18,
The inorganic multilayer film includes an oxide film and a nitride film,
An electroluminescent device in which the oxide film is partially removed from the upper portion, but the nitride film is not partially removed. a lower structure including a glass substrate and an inorganic multilayer film positioned on the substrate; and
It includes an encapsulation structure located on the lower structure,
The lower structure includes a display area defined inside the outer edge of the inorganic multilayer film when viewed in plan; and
Having a light transmission area in the form of a non-through hole defined inside the outer perimeter of the inorganic multilayer film when viewed in plan, and at least partially surrounded by the display area,
The inorganic multilayer film is formed with at least one hole corresponding to the light transmission area,
The display area is opaque,
The electroluminescent device wherein the light transmitting area in the form of a non-penetrating hole does not have a hole penetrating the substrate.