KR102616536B1 - 확률적 레티클 결함 처리 - Google Patents

확률적 레티클 결함 처리 Download PDF

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KR102616536B1
KR102616536B1 KR1020217036240A KR20217036240A KR102616536B1 KR 102616536 B1 KR102616536 B1 KR 102616536B1 KR 1020217036240 A KR1020217036240 A KR 1020217036240A KR 20217036240 A KR20217036240 A KR 20217036240A KR 102616536 B1 KR102616536 B1 KR 102616536B1
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product
reticle
simulated
samples
elements
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KR20210138122A (ko
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모쉬 이. 프레일
존 제이. 비아포어
프렛 알렉스 바글리오
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케이엘에이 코포레이션
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Measuring Or Testing Involving Enzymes Or Micro-Organisms (AREA)
KR1020217036240A 2019-04-09 2020-04-07 확률적 레티클 결함 처리 Active KR102616536B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962831524P 2019-04-09 2019-04-09
US62/831,524 2019-04-09
US16/824,327 2020-03-19
US16/824,327 US10990019B2 (en) 2019-04-09 2020-03-19 Stochastic reticle defect dispositioning
PCT/US2020/026971 WO2020210177A1 (en) 2019-04-09 2020-04-07 Stochastic reticle defect dispositioning

Publications (2)

Publication Number Publication Date
KR20210138122A KR20210138122A (ko) 2021-11-18
KR102616536B1 true KR102616536B1 (ko) 2023-12-20

Family

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KR1020217036240A Active KR102616536B1 (ko) 2019-04-09 2020-04-07 확률적 레티클 결함 처리

Country Status (5)

Country Link
US (1) US10990019B2 (https=)
JP (1) JP7369788B2 (https=)
KR (1) KR102616536B1 (https=)
TW (1) TWI818169B (https=)
WO (1) WO2020210177A1 (https=)

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US10176966B1 (en) 2017-04-13 2019-01-08 Fractilia, Llc Edge detection system
US12142454B2 (en) 2017-04-13 2024-11-12 Fractilla, LLC Detection of probabilistic process windows
US10522322B2 (en) 2017-04-13 2019-12-31 Fractilia, Llc System and method for generating and analyzing roughness measurements
US11380516B2 (en) 2017-04-13 2022-07-05 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
CA3226512A1 (en) * 2021-08-11 2023-02-16 Fuming Wang Mask defect detection
US12306531B2 (en) * 2021-08-20 2025-05-20 Samsung Electronics Co., Ltd. Lithography and method of fabricating semiconductor device using the same
US11966156B2 (en) * 2022-08-16 2024-04-23 Kla Corporation Lithography mask repair by simulation of photoresist thickness evolution

Citations (6)

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JP2004296592A (ja) 2003-03-26 2004-10-21 Dainippon Screen Mfg Co Ltd 欠陥分類装置、欠陥分類方法およびプログラム
US20140199791A1 (en) 2012-11-20 2014-07-17 Kla-Tencor Corporation Method and System for Universal Target Based Inspection and Metrology
US20170082921A1 (en) 2015-09-22 2017-03-23 Samsung Electronics Co., Ltd. Method of correcting mask pattern and method of manufacturing reticle
WO2018099742A1 (en) 2016-12-02 2018-06-07 Asml Netherlands B.V. Model for estimating stochastic variation
US20180275523A1 (en) 2017-03-22 2018-09-27 Kla-Tencor Corporation Stochastically-Aware Metrology and Fabrication
WO2019011604A1 (en) 2017-07-12 2019-01-17 Asml Netherlands B.V. PREDICTION OF DEFECTS

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US6699627B2 (en) * 2000-12-08 2004-03-02 Adlai Smith Reference wafer and process for manufacturing same
US6734971B2 (en) * 2000-12-08 2004-05-11 Lael Instruments Method and apparatus for self-referenced wafer stage positional error mapping
JP2005258080A (ja) * 2004-03-11 2005-09-22 Matsushita Electric Ind Co Ltd レイアウトデータ検証方法、マスクパターン検証方法および回路動作検証方法
US7729529B2 (en) * 2004-12-07 2010-06-01 Kla-Tencor Technologies Corp. Computer-implemented methods for detecting and/or sorting defects in a design pattern of a reticle
CN102662309B (zh) * 2005-09-09 2014-10-01 Asml荷兰有限公司 采用独立掩模误差模型的掩模验证系统和方法
US8555210B2 (en) * 2011-04-29 2013-10-08 Micron Technology, Inc. Systems and methods for stochastic models of mask process variability
NL2009982A (en) 2012-01-10 2013-07-15 Asml Netherlands Bv Source mask optimization to reduce stochastic effects.
US8718353B2 (en) * 2012-03-08 2014-05-06 Kla-Tencor Corporation Reticle defect inspection with systematic defect filter
US10101670B2 (en) * 2013-03-27 2018-10-16 Kla-Tencor Corporation Statistical model-based metrology
US8910092B1 (en) * 2013-11-13 2014-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Model based simulation method with fast bias contour for lithography process check
US9087176B1 (en) * 2014-03-06 2015-07-21 Kla-Tencor Corporation Statistical overlay error prediction for feed forward and feedback correction of overlay errors, root cause analysis and process control
KR102735948B1 (ko) * 2015-08-10 2024-11-28 케이엘에이 코포레이션 웨이퍼-레벨 결함 인쇄성을 예측하기 위한 장치 및 방법들
US10901325B2 (en) * 2017-02-28 2021-01-26 Kla-Tencor Corporation Determining the impacts of stochastic behavior on overlay metrology data
US10656532B2 (en) * 2017-04-13 2020-05-19 Fractilia, Llc Edge detection system and its use for optical proximity correction
DE102018202637B4 (de) * 2018-02-21 2021-09-23 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung einer Fokuslage einer Lithographie-Maske und Metrologiesystem zur Durchführung eines derartigen Verfahrens

Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
JP2004296592A (ja) 2003-03-26 2004-10-21 Dainippon Screen Mfg Co Ltd 欠陥分類装置、欠陥分類方法およびプログラム
US20140199791A1 (en) 2012-11-20 2014-07-17 Kla-Tencor Corporation Method and System for Universal Target Based Inspection and Metrology
US20170082921A1 (en) 2015-09-22 2017-03-23 Samsung Electronics Co., Ltd. Method of correcting mask pattern and method of manufacturing reticle
WO2018099742A1 (en) 2016-12-02 2018-06-07 Asml Netherlands B.V. Model for estimating stochastic variation
US20180275523A1 (en) 2017-03-22 2018-09-27 Kla-Tencor Corporation Stochastically-Aware Metrology and Fabrication
WO2019011604A1 (en) 2017-07-12 2019-01-17 Asml Netherlands B.V. PREDICTION OF DEFECTS

Also Published As

Publication number Publication date
TWI818169B (zh) 2023-10-11
US10990019B2 (en) 2021-04-27
JP2022526625A (ja) 2022-05-25
JP7369788B2 (ja) 2023-10-26
US20200326634A1 (en) 2020-10-15
KR20210138122A (ko) 2021-11-18
TW202105056A (zh) 2021-02-01
WO2020210177A1 (en) 2020-10-15

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