KR102572763B1 - Transparent display device and method for manufacturing the same - Google Patents

Abstract

The present invention relates to a transparent display device capable of maximizing both the area of light emitting units and the area of openings, and a manufacturing method thereof. A transparent display device according to an embodiment of the present invention includes pixels provided in an area defined by data lines, gate lines, and a cross structure of the data lines and the gate lines. Each of the pixels includes a light emitting part that emits light, and a transmission part that overlaps the light emitting part and transmits incident light as it is. A width of the light emitting portion in one direction is wider than a width of the transmission portion in one direction.

Description

Transparent display device and its manufacturing method {TRANSPARENT DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME}

The present invention relates to a transparent display device and a manufacturing method thereof.

BACKGROUND OF THE INVENTION [0002] As we enter the information age, the display field for processing and displaying a large amount of information has developed rapidly, and in response to this, various display devices have been developed and are in the spotlight. Specific examples of such a display device include a liquid crystal display device (LCD), a plasma display panel (PDP), a field emission display device (FED), and an organic light emitting display device (Organic Display). Light Emitting Diodes: OLED) and the like.

Recently, due to its characteristics, research into a transparent display device that allows a user to see an object or background located on the rear side of the display device has been actively conducted. A transparent display device has advantages in space utilization, interior and design, and can have various application fields. The transparent display device can solve the spatial and visual limitations of existing electronic devices by implementing functions of information recognition, information processing, and information display with transparent electronic devices. For example, the transparent display device may be applied to a window of a building or a vehicle to be implemented as a smart window that shows a background or displays an image.

The transparent display device may be implemented as an organic light emitting display device. In this case, the transparent display device includes transmission parts that transmit incident light as it is and light emitting parts that emit light. When the light emitting parts do not emit light, the user can see the background of the transparent display device through the transparent parts, and when the light emitting parts emit light, the user can see an image displayed by the light emitting parts.

As shown in FIG. 1 , each of the pixels of the transparent display device may be divided into a transmissive portion TA, a light emitting portion EA, and a wiring portion LA in which a plurality of wires are formed. Therefore, in the transparent display device, the area of the transmissive parts TA and the area of the light emitting parts EA have a trade-off relationship. That is, when the area of the transmission parts TA is increased, the area of the light emitting parts EA needs to be reduced, and when the area of the light emitting parts EA is increased, the area of the transmission parts TA needs to be reduced.

In order to increase the transparency of the transparent display device, the area of the transmission parts should be increased to increase the aperture ratio of the transmission parts. However, in this case, since the area of the light emitting units EA is reduced, the luminance of an image displayed by the light emitting units EA may be lowered.

The present invention provides a transparent display device capable of maximizing both the area of light emitting units and the area of openings and a manufacturing method thereof.

A transparent display device according to an embodiment of the present invention includes pixels provided in an area defined by data lines, gate lines, and a cross structure of the data lines and the gate lines. Each of the pixels includes a light emitting part that emits light, and a transmission part that overlaps the light emitting part and transmits incident light as it is. A width of the light emitting portion in one direction is wider than a width of the transmission portion in one direction.

A method of manufacturing a transparent display device according to an embodiment of the present invention includes forming a thin film transistor on a first substrate, forming a light absorbing film on the thin film transistor to cover the thin film transistor, and flattening a step due to the thin film transistor. forming a planarization film on the light absorption film, forming a contact hole through the light absorption film and the planarization film, and forming an anode electrode connected to the source or drain electrode of the thin film transistor through the contact hole on the planarization film. Include steps.

In an embodiment of the present invention, an anode electrode and a cathode electrode of an organic light emitting device of each of a plurality of light emitting units are formed of a transparent metal material. Accordingly, in an embodiment of the present invention, each of the plurality of light emitting units may serve as a transmission unit. That is, in the embodiment of the present invention, there is no trade-off relationship between the area of the transmission parts and the area of the light emitting parts. Therefore, in the embodiment of the present invention, it is not necessary to reduce the area of the light emitting parts to increase the area of the transmission parts, and thus both the area of the light emitting parts and the area of the openings can be maximized.

In addition, an embodiment of the present invention outputs the light emitted from each of the plurality of light emitting units to the first substrate and the second substrate by forming the anode electrode and the cathode electrode of the organic light emitting device of each of the plurality of light emitting units with a transparent metal material. can do. That is, an embodiment of the present invention can be implemented as a double-sided display device in which a user can view images on both the front and rear surfaces.

In addition, in an embodiment of the present invention, a light absorbing film is disposed between the thin film transistor and the planarization film. In particular, in an embodiment of the present invention, the width of the bank is narrower than that of the light absorbing layer. Accordingly, in an embodiment of the present invention, the anode electrode may be disposed to overlap the light absorption layer. That is, in an embodiment of the present invention, the area of each of the light emitting units may be expanded by extending the anode electrode to the driving unit. Accordingly, the lifespan of each of the light emitting units may be increased according to an embodiment of the present invention.

Furthermore, since the embodiment of the present invention can prevent reflection of external light due to the light absorbing film, deterioration of image visibility can be prevented.

In addition to the effects of the present invention mentioned above, other features and advantages of the present invention will be described below, or will be clearly understood by those skilled in the art from such description and description.

1 is an exemplary view showing a transmissive part and a light emitting part of a pixel of a conventional transparent display device.
2 is a perspective view showing a transparent display device according to an exemplary embodiment of the present invention.
FIG. 3 is a plan view illustrating a first substrate, a gate driver, a source drive IC, a flexible film, a circuit board, and a timing controller of FIG. 2 .
FIG. 4 is a plan view illustrating light emitting parts and an opening of one pixel of the display area of FIG. 3 .
5 is a cross-sectional view showing an example of line A-A' of FIG. 4 .
6 is a cross-sectional view showing another example of line A-A' of FIG. 4 .
7 is a flowchart illustrating a method of manufacturing a transparent display device according to an exemplary embodiment of the present invention.
8A to 8F are cross-sectional views taken along line A-A' for explaining a method of manufacturing a transparent display device.

Advantages and features of the present invention, and methods for achieving them, will become clear with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, only the present embodiments make the disclosure of the present invention complete, and those skilled in the art in the art to which the present invention belongs It is provided to fully inform the person of the scope of the invention, and the invention is only defined by the scope of the claims.

Since the shape, size, ratio, angle, number, etc. disclosed in the drawings for explaining the embodiment of the present invention are exemplary, the present invention is not limited to the matters shown. Like reference numbers designate like elements throughout the specification. In addition, in describing the present invention, if it is determined that a detailed description of related known technologies may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted.

When 'includes', 'has', 'consists', etc. mentioned in this specification is used, other parts may be added unless 'only' is used. In the case where a component is expressed in the singular, the case including the plural is included unless otherwise explicitly stated.

In interpreting the components, even if there is no separate explicit description, it is interpreted as including the error range.

In the case of a description of a positional relationship, for example, 'on top of', 'on top of', 'at the bottom of', 'next to', etc. Or, unless 'directly' is used, one or more other parts may be located between the two parts.

In the case of a description of a temporal relationship, for example, 'immediately' or 'directly' when a temporal precedence relationship is described in terms of 'after', 'following', 'next to', 'before', etc. It can also include non-continuous cases unless is used.

Although first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, the first component mentioned below may also be the second component within the technical spirit of the present invention.

"X-axis direction", "Y-axis direction", and "Z-axis direction" should not be interpreted only as a geometric relationship in which the relationship between each other is made upright, and may be broader within the range in which the configuration of the present invention can function functionally. It can mean having a direction.

The term “at least one” should be understood to include all possible combinations from one or more related items. For example, "at least one of the first item, the second item, and the third item" means not only the first item, the second item, or the third item, respectively, but also two of the first item, the second item, and the third item. It may mean a combination of all items that can be presented from one or more.

Each feature of the various embodiments of the present invention can be partially or entirely combined or combined with each other, technically various interlocking and driving are possible, and each embodiment can be implemented independently of each other or can be implemented together in an association relationship. may be

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a perspective view showing a transparent display device according to an exemplary embodiment of the present invention. FIG. 3 is a plan view illustrating a first substrate, a gate driver, a source drive IC, a flexible film, a circuit board, and a timing controller of FIG. 2 .

Referring to FIGS. 2 and 3 , a transparent display device 100 according to an embodiment of the present invention includes a display panel 110, a gate driver 120, and a source drive integrated circuit (hereinafter referred to as “IC”). 130, a flexible film 140, a circuit board 150, and a timing controller 160.

The display panel 110 includes a first substrate 111 and a second substrate 112 . The second substrate 112 may be an encapsulation substrate. The first substrate 111 and the second substrate 112 may be plastic or glass.

Gate lines, data lines, and pixels are formed on one surface of the first substrate 111 facing the second substrate 112 . Pixels are provided in an area defined by a cross structure of gate lines and data lines.

Each of the pixels may include a driving unit in which thin film transistors are formed and light emitting units in which organic light emitting devices are formed. The light emitting units may include a red light emitting unit, a green light emitting unit, and a blue light emitting unit, but are not limited thereto.

The driver uses a thin film transistor to supply a predetermined current to the organic light emitting device according to the data voltage of the data line when a gate signal is input from the gate line. The organic light emitting device emits light with a predetermined brightness according to a predetermined current.

As shown in FIG. 3 , the display panel 110 may be divided into a display area DA in which pixels are formed to display an image and a non-display area NDA in which an image is not displayed. Gate lines, data lines, and pixels may be formed in the display area DA. The gate driver 120 and pads may be formed in the non-display area NDA.

The gate driver 120 supplies gate signals to the gate lines according to the gate control signal input from the timing controller 160 . The gate driver 120 may be formed in the non-display area NDA outside one or both sides of the display area DA of the display panel 110 in a gate driver in panel (GIP) method. Alternatively, the gate driver 120 is manufactured as a driving chip and mounted on a flexible film, and the non-display area NDA on one side or both sides of the display area DA of the display panel 110 is formed by a tape automated bonding (TAB) method. may be attached to

The source drive IC 130 receives digital video data and a source control signal from the timing controller 160 . The source driver IC 130 converts digital video data into analog data voltages according to a source control signal and supplies them to data lines. When the source drive IC 130 is manufactured as a driving chip, it may be mounted on the flexible film 140 in a chip on film (COF) or chip on plastic (COP) method.

Pads such as data pads may be formed in the non-display area NDA of the display panel 110 . Wires connecting pads and the source drive IC 130 and wires connecting pads and wires of the circuit board 150 may be formed on the flexible film 140 . The flexible film 140 is attached to the pads using an anisotropic conducting film, and thereby the pads and the wires of the flexible film 140 can be connected.

The circuit board 150 may be attached to the flexible films 140 . A plurality of circuits implemented as driving chips may be mounted on the circuit board 150 . For example, the timing controller 160 may be mounted on the circuit board 150 . The circuit board 150 may be a printed circuit board or a flexible printed circuit board.

The timing controller 160 receives digital video data and timing signals from an external system board through a cable of the circuit board 150 . The timing controller 60 generates a gate control signal for controlling the operation timing of the gate driver 120 and a source control signal for controlling the source drive ICs 130 based on the timing signal. The timing controller 160 supplies gate control signals to the gate driver 120 and supplies source control signals to the source drive ICs 130 .

FIG. 4 is a plan view illustrating light emitting units, a driving unit, and a transmitting unit of any one pixel of the display area of FIG. 3 .

Referring to FIG. 4 , the pixel P includes a plurality of light emitting units RE, BE, GE1 and GE2 and a driving unit DA. 4 illustrates that the plurality of light emitting units include a red light emitting unit RE, a blue light emitting unit BE, and green light emitting units GE1 and GE2, but is not limited thereto. That is, the number of light emitting units and the color combination of the light emitting units may be changed according to the characteristics of the display panel 110 .

The red light emitting part RE emits red light, the green light emitting parts GE1 and GE2 emit green light, and the blue light emitting part BE emits blue light. Each of the red light emitting unit RE, the blue light emitting unit BE, and the green light emitting units GE1 and GE2 includes an organic light emitting device, and may emit light with a predetermined brightness by emitting the organic light emitting device.

When the organic light emitting elements of the red light emitting part RE, the blue light emitting part BE, and the green light emitting parts GE1 and GE2 emit white light, the red light emitting part RE, the blue light emitting part BE, And each of the green light emitting units GE1 and GE2 may include a color filter. Red light emitting unit RE, blue light emitting unit BE, and green light emitting units GE1 and GE2 When each organic light emitting element emits red light, blue light, and green light, respectively, red light emitting unit RE , each of the blue light emitting unit BE and the green light emitting units GE1 and GE2 may not include a color filter.

The driving unit DA may include at least three groups of thin film transistors to drive the red light emitting unit RE, the blue light emitting unit BE, and the green light emitting units GE1 and GE2. When a gate signal is input from the gate line, the thin film transistors of the first group supply a predetermined current to the organic light emitting device of the red light emitting region RE according to the data voltage of the data line. When a gate signal is input from the gate line, the thin film transistors of the second group supply a predetermined current to the organic light emitting diodes of the green light emitting units GE1 and GE2 according to the data voltage of the data line. The thin film transistors of the third group supply a predetermined current to the organic light emitting device of the blue light emitting unit BE according to the data voltage of the data line when a gate signal is input from the gate line.

An anode electrode and a cathode electrode of the plurality of light emitting units RE, BE, GE1, and GE2 are made of a transparent metal material. For this reason, the plurality of light emitting units RE, BE, GE1, and GE2 may serve as a transmission unit TA that transmits incident light as it is. That is, the transmissive portion TA of the pixel P may overlap the light emitting portion.

Since the driving unit DA includes an opaque metal material, it is not included in the transmission unit TA. Also, since each of the light emitting units RE, BE, GE1, and GE2 may be formed on the driving unit DA, the driving unit DA may partially overlap the light emitting units RE, BE, GE1, and GE2. Therefore, when the driving unit DA is disposed between adjacent light emitting units in the Y-axis direction as shown in FIG. 4 , the width w1 of each of the light emitting units RE, BE, GE1 and GE2 in the Y-axis direction is equal to that of the transmission unit TA It is wider than the Y-axis direction width (w2) of The Y-axis direction may be a direction parallel to the data lines.

In addition, when the driving unit DA is disposed between light emitting units adjacent to each other in the Y-axis direction as shown in FIG. 4 , the driving unit DA and opaque metal wires may not be formed between the light emitting units adjacent to each other in the X-axis direction. . Therefore, the width w3 of the transmission part TA in the X-axis direction is wider than the width w4 of each of the light emitting parts RE, BE, GE1, and GE2 in the X-axis direction. The X-axis direction may be a direction parallel to the gate lines.

As described above, in the embodiment of the present invention, an anode electrode and a cathode electrode of each organic light emitting device of the plurality of light emitting units RE, BE, GE1, and GE2 are formed of a transparent metal material. Accordingly, in the embodiment of the present invention, each of the plurality of light emitting units RE, BE, GE1, and GE2 may serve as a transmission unit TA. That is, in the embodiment of the present invention, there is no trade-off relationship between the areas of the transmitting portions TA and the areas of the light emitting portions RE, BE, GE1, and GE2. Therefore, in the embodiment of the present invention, since there is no need to reduce the area of the light emitting units RE, BE, GE1, and GE2 to increase the area of the transmission units TA, both the area of the light emitting units and the area of the openings can be maximized. .

In addition, an embodiment of the present invention forms an anode electrode and a cathode electrode of each organic light emitting element of the plurality of light emitting units RE, BE, GE1, and GE2 with a transparent metal material, so that the plurality of light emitting units RE, BE, GE1 , GE2 ) may output light emitted from each of the first substrate 111 and the second substrate 112 . That is, an embodiment of the present invention can be implemented as a double-sided display device in which a user can view images on both the front and rear surfaces.

Furthermore, in the embodiment of the present invention, the Y-axis direction width w1 of each of the light emitting units RE, BE, GE1, and GE2 is formed to be wider than the Y-axis direction width w2 of the transmission unit TA. Accordingly, in an exemplary embodiment of the present disclosure, an area of each of the light emitting units RE, BE, GE1 and GE2 may be expanded so that each of the light emitting units RE, BE, GE1 and GE2 overlaps the driving unit DA. Accordingly, the lifespan of each of the light emitting units RE, BE, GE1, and GE2 may be increased according to an embodiment of the present invention.

Hereinafter, a pixel P of a transparent display device according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 5 and 6 .

5 is a cross-sectional view showing an example of line A-A' of FIG. 4 .

Referring to FIG. 5 , a buffer layer 210 is formed on one surface of the first substrate 111 facing the second substrate 112 . The buffer film 210 is formed on one surface of the first substrate 111 to protect the thin film transistors 220 and the organic light emitting diodes 280 from moisture penetrating through the first substrate 111, which is vulnerable to moisture permeation. . The buffer layer 210 may include a plurality of inorganic layers alternately stacked. For example, the buffer layer 210 may be formed of a multilayer in which one or more inorganic layers of a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), and SiON are alternately stacked.

Thin film transistors 220 are formed on the buffer layer 210 . Each of the thin film transistors 220 includes an active layer 221 , a gate electrode 222 , a source electrode 223 and a drain electrode 224 . 5 illustrates that the thin film transistors 220 are formed in a top gate (top gate) method in which the gate electrode 222 is located above the active layer 221, it should be noted that the present invention is not limited thereto. That is, the thin film transistor 220 is a bottom gate (bottom gate) method in which the gate electrode 222 is located below the active layer 221 or the gate electrode 222 is located above and below the active layer 221. It may be formed in a double gate method located in both.

An active layer 221 is formed on the buffer layer 210 . The active layer 221 may be formed of a silicon-based semiconductor material or an oxide-based semiconductor material. A light blocking layer may be formed between the buffer layer 210 and the active layer 221 to block external light incident on the active layer 221 .

A gate insulating layer 230 may be formed on the active layer 221 . The gate insulating layer 230 may be formed of an inorganic layer, for example, a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof.

A gate electrode 222 and a gate line may be formed on the gate insulating layer 230 . The gate electrode 222 and the gate line are made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be formed as a single layer or multiple layers made of one or an alloy thereof.

An interlayer insulating layer 240 may be formed on the gate electrode 222 and the gate line. The interlayer insulating layer 240 may be formed of an inorganic layer, for example, a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof.

A source electrode 223 , a drain electrode 224 , and a data line may be formed on the interlayer insulating layer 240 . Each of the source electrode 223 and the drain electrode 224 may be connected to the active layer 221 through a contact hole CT1 passing through the gate insulating layer 230 and the interlayer insulating layer 240 . The source electrode 223, the drain electrode 224, and the data line may be formed of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), or neodymium (Nd). And copper (Cu) may be formed of a single layer or multiple layers made of any one or an alloy thereof.

A protective layer 250 may be formed on the source electrode 223 , the drain electrode 224 , and the data line to insulate the thin film transistor 220 . The protective layer 250 may be formed of an inorganic layer, for example, a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof.

A light absorption layer 260 may be formed on the passivation layer 250 to cover the thin film transistor 220 . The light absorbing layer 260 includes a material capable of absorbing light. For example, the light absorbing layer 260 may be an organic layer having a predetermined color or a black organic layer. For this reason, the transmission portion TA may be defined by the light absorbing layer 260 .

As shown in FIG. 5 , the light absorbing layer 260 may be disposed between the red light emitting part RE and the blue light emitting part BE adjacent in the Y-axis direction. In particular, the width w6 of the light absorption layer 260 may be wider than the width of the bank w5. Accordingly, the Y-axis direction width w1 of each of the light emitting units RE, BE, GE1, and GE2 may be formed to be wider than the Y-axis direction width w2 of the transmission unit TA. Accordingly, in an embodiment of the present invention, the anode electrode 281 may be disposed to overlap the light absorbing layer 260 . That is, in the embodiment of the present invention, the area of each of the light emitting units RE, BE, GE1, and GE2 may be expanded by extending the anode electrode 281 to the driving unit DA. Accordingly, the lifespan of each of the light emitting units RE, BE, GE1, and GE2 may be increased according to an embodiment of the present invention.

Since the driving unit DA in which the thin film transistor 220 is formed is formed of an opaque metal material, it is not included in the transmission unit TA. The light absorbing film 260 prevents light incident from the second substrate 112 to the thin film transistor 220 from being reflected by the opaque metal material of the thin film transistor 220 and emitted to the second substrate 112. , absorbs light incident from the second substrate 112 to the thin film transistor 220 . In the embodiment of the present invention, since both the anode electrode and the cathode electrode are formed of a transparent metal material in order to be implemented as a transparent display device, if the light absorbing film 260 is not formed, the image displayed by the light emitting units due to reflection of external light Visibility may deteriorate. That is, according to an exemplary embodiment of the present invention, reflection of external light due to the light absorbing layer 260 is prevented, and thus visibility of an image may be prevented from deteriorating.

A planarization layer 270 may be formed on the passivation layer 250 and the light absorbing layer 260 to flatten a level difference caused by the thin film transistor 220 . The planarization layer 270 may be formed of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. there is.

Light emitting units RE, BE, and GE1 including organic light emitting diodes 280 are formed on the planarization layer 270 . Each of the organic light emitting devices 280 includes an anode electrode 281 , an organic light emitting layer 282 , and a cathode electrode 283 . The light emitting units RE, BE, and GE1 are partitioned by a bank 284 .

An anode electrode 281 is formed on the planarization layer 270 . The anode electrode 281 may be connected to the drain electrode 224 of the thin film transistor 220 through a contact hole (CNT) passing through the passivation layer 250, the light absorbing layer 260, and the planarization layer 270. . 5 illustrates that the anode electrode 281 is connected to the drain electrode 224 of the thin film transistor 220, it may be connected to the source electrode 223 of the thin film transistor 220.

The anode electrode 281 is formed of a transparent conductive material (TCO, Transparent Conductive Material) such as ITO or IZO capable of transmitting light, or magnesium (Mg), silver (Ag), or magnesium (Mg) and silver (Ag). It may be formed of a semi-transmissive conductive material such as an alloy.

The bank 284 may be formed to cover the edge of the anode electrode 281 on the planarization layer 270 to partition the light emitting units RE, BE, and GE1.

An organic emission layer 282 is formed on the anode electrode 281 and the bank 284 . The organic light emitting layer 282 may include a hole transporting layer, a light emitting layer, and an electron transporting layer. In this case, when a voltage is applied to the anode electrode 281 and the cathode electrode 283, holes and electrons move to the light emitting layer through the hole transport layer and the electron transport layer, respectively, and combine with each other in the light emitting layer to emit light.

The organic light emitting layer 282 may include only a white light emitting layer emitting white light. When the organic light emitting layer 282 is a white light emitting layer, it may be formed to cover the anode electrodes 281 and the bank 284 as shown in FIG. 5 .

Alternatively, the organic light emitting layer 282 may include a red light emitting layer emitting red light, a green light emitting layer emitting green light, and a blue light emitting layer emitting blue light. In this case, the red light emitting layer is formed on the anode electrode 281 of the red light emitting part RE, the green light emitting layer is formed on the anode electrode 281 of the green light emitting part GE1, and the blue light emitting layer is formed on the blue light emitting part ( BE) may be formed on the anode electrode 281.

The cathode electrode 283 is formed on the organic light emitting layer 282 . The cathode electrode 283 is made of a transparent conductive material (TCO, TCO) capable of transmitting light, such as ITO or IZO, or magnesium (Mg), silver (Ag), or magnesium (Mg) and silver (Ag). It may be formed of a semi-transmissive conductive material such as an alloy. A capping layer may be formed on the cathode electrode 283 .

An encapsulation film 290 is formed on the cathode electrode 283 . The encapsulation film 290 serves to prevent penetration of oxygen or moisture into the organic light emitting layer 282 and the cathode electrode 283 . To this end, the encapsulation layer 290 may include at least one inorganic layer and at least one organic layer. 5 illustrates that the encapsulation layer 290 includes a first inorganic layer 291, an organic layer 292, and a second inorganic layer 293, but is not limited thereto.

The first inorganic layer 291 is formed on the cathode electrode 283 to cover the cathode electrode 283 . The organic layer 292 is formed on the first inorganic layer 291 to cover the first inorganic layer 291 . The organic layer 292 is preferably formed to a sufficient thickness to prevent particles from penetrating the first inorganic layer 291 and being introduced into the organic light emitting layer 282 and the cathode electrode 283. . The second inorganic layer 293 is formed on the organic layer 292 to cover the organic layer 292 .

Each of the first and second inorganic layers 281 and 283 may be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, or titanium oxide.

The organic layer 282 may be transparent to pass light L emitted from the organic light emitting layer 282 . The organic layer 282 is preferably formed of an organic material capable of passing 99% or more of the light L emitted from the organic light emitting layer 282 .

Color filters 321 , 322 , and 323 and a black matrix 310 may be formed on the second substrate 112 facing the first substrate 111 . When each organic light emitting element of the red light emitting part RE, the blue light emitting part BE, and the green light emitting parts GE1 and GE2 emits white light, a red color filter 323 is formed in the red light emitting part RE. A blue color filter 322 may be formed in the blue light emitting part BE, and a green color filter 321 may be formed in the green light emitting part GE1. The black matrix BM may be disposed between the color filters 321, 322, and 323. When the organic light emitting layer 282 includes a red light emitting layer emitting red light, a green light emitting layer emitting green light, and a blue light emitting layer emitting blue light, the color filters 321, 322, and 323 and the black matrix 310 can be omitted.

The encapsulation layer 290 of the first substrate 111 and the color filters 321 , 322 , and 323 of the second substrate 112 are bonded using an adhesive layer 330 . The second substrate 112 may be bonded. The adhesive layer 330 may be a transparent adhesive resin.

As described above, in the embodiment of the present invention, an anode electrode and a cathode electrode of each organic light emitting device of the plurality of light emitting units RE, BE, GE1, and GE2 are formed of a transparent metal material. Accordingly, in the embodiment of the present invention, each of the plurality of light emitting units RE, BE, GE1, and GE2 may serve as a transmission unit TA. That is, in the embodiment of the present invention, there is no trade-off relationship between the areas of the transmitting portions TA and the areas of the light emitting portions RE, BE, GE1, and GE2. Therefore, in the embodiment of the present invention, since there is no need to reduce the area of the light emitting units RE, BE, GE1, and GE2 to increase the area of the transmission units TA, both the area of the light emitting units and the area of the openings can be maximized. .

In addition, an embodiment of the present invention forms an anode electrode and a cathode electrode of each organic light emitting element of the plurality of light emitting units RE, BE, GE1, and GE2 with a transparent metal material, so that the plurality of light emitting units RE, BE, GE1 , GE2 ) may output light emitted from each of the first substrate 111 and the second substrate 112 . That is, an embodiment of the present invention can be implemented as a double-sided display device in which a user can view images on both the front and rear surfaces.

In addition, in an embodiment of the present invention, the light absorbing film 260 is disposed between the thin film transistor 220 and the planarization film 270 . In particular, in the embodiment of the present invention, the width of the bank w5 is narrower than the width w6 of the light absorbing layer 260 . Accordingly, in an embodiment of the present invention, the anode electrode 281 may be disposed to overlap the light absorbing layer 260 . That is, in the embodiment of the present invention, the area of each of the light emitting units RE, BE, GE1, and GE2 may be expanded by extending the anode electrode 281 to the driving unit DA. Accordingly, the lifespan of each of the light emitting units RE, BE, GE1, and GE2 may be increased according to an embodiment of the present invention.

Furthermore, according to an exemplary embodiment of the present invention, reflection of external light due to the light absorbing film 260 is prevented, thereby preventing deterioration in visibility of an image.

6 is a cross-sectional view showing another example of line A-A' of FIG. 4 .

In FIG. 6 , the light absorbing film 260 is formed on the thin film transistor 220 to cover the thin film transistor 220 , and the passivation film 250 is formed on the light absorbing film 260 , as described in FIG. 5 . bar is substantially the same. Therefore, a detailed description of FIG. 6 will be omitted.

7 is a flowchart illustrating a method of manufacturing a transparent display device according to an exemplary embodiment of the present invention. 8A to 8F are cross-sectional views taken along line A-A' for explaining a method of manufacturing a transparent display device. Since the cross-sectional views of FIGS. 8A to 8F relate to the manufacturing method of the organic light emitting display device shown in FIG. 5, the same reference numerals refer to the same components. Hereinafter, a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 7 and 8A to 8F.

First, as shown in FIG. 8A , a buffer layer 210 composed of a plurality of inorganic layers alternately stacked on the first substrate 111 is formed. Then, a thin film transistor 220 is formed on the buffer layer 210 .

Specifically, the active layer 221 is formed on the first substrate 100 . The active layer 221 may be formed of a silicon-based semiconductor material or an oxide-based semiconductor material.

Then, a gate insulating layer 230 is formed on the active layer 221 . The gate insulating layer 230 may be formed of an inorganic layer, for example, a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof.

Then, a gate electrode 222 and a gate line are formed on the gate insulating layer 230 . The gate electrode 222 and the gate line are made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be formed as a single layer or multiple layers made of one or an alloy thereof.

Then, an interlayer insulating film 240 is formed on the gate electrode 222 and the gate lines. The interlayer insulating layer 240 may be formed of an inorganic layer, for example, a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof.

Then, contact holes CT1 exposing the active layer 221 are formed through the gate insulating layer 230 and the interlayer insulating layer 240 .

Then, a source electrode 223, a drain electrode 224, and a data line are formed on the interlayer insulating film 240. Each of the source electrode 223 and the drain electrode 224 may be connected to the active layer 221 through a contact hole CT1 passing through the gate insulating layer 230 and the interlayer insulating layer 240 . The source electrode 223, the drain electrode 224, and the data line may be formed of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), or neodymium (Nd). And copper (Cu) may be formed of a single layer or multiple layers made of any one or an alloy thereof. (S101 in Fig. 7)

Second, as shown in FIG. 8B , a passivation layer 250 is formed on the thin film transistor 220 and a light absorption layer 260 is formed on the passivation layer 250 . The light absorbing film 260 is formed to cover the thin film transistor 220 .

Alternatively, as shown in FIG. 6 , a light absorbing film 260 may be formed on the thin film transistor 220 to cover the thin film transistor 220 , and a protective film 250 may be formed on the light absorbing film 260 .

The light absorbing layer 260 includes a material capable of absorbing light. For example, the light absorbing layer 260 may be an organic layer having a predetermined color or a black organic layer. (S102 in Fig. 7)

Thirdly, as shown in FIG. 8C , a planarization film 270 is formed on the passivation film 250 and the light absorbing film 260 to flatten the level difference caused by the thin film transistor 220 . The planarization layer 270 may be formed of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. there is. (S103 in Fig. 7)

Fourth, as shown in FIG. 8D , contact holes (CNT) penetrating the passivation layer 250 , the light absorbing layer 260 , and the planarization layer 270 are formed. (S104 in Fig. 7)

Fifthly, as shown in FIG. 8E, an anode electrode 281, a bank 284, an organic emission layer 282, a cathode electrode 283, and an encapsulation film 290 are sequentially formed.

Specifically, the anode electrode 281 is connected to the drain electrode 224 of the thin film transistor 220 through a contact hole (CNT) penetrating the passivation layer 250, the light absorbing layer 260, and the planarization layer 270. It can be. 5 illustrates that the anode electrode 281 is connected to the drain electrode 224 of the thin film transistor 220, it may be connected to the source electrode 223 of the thin film transistor 220. The anode electrode 281 is formed of a transparent conductive material (TCO, Transparent Conductive Material) such as ITO or IZO capable of transmitting light, or magnesium (Mg), silver (Ag), or magnesium (Mg) and silver (Ag). It may be formed of a semi-transmissive conductive material such as an alloy.

Then, a bank 284 is formed to cover the edge of the anode electrode 281 on the planarization film 270 to partition the light emitting units RE, BE, GE1, and GE2.

Then, an organic emission layer 282 is formed on the anode electrode 281 and the bank 284 . The organic emission layer 282 may be formed through a deposition process or a solution process. When the organic light emitting layer 282 is formed through a deposition process, it may be formed using an evaporation method.

Then, a cathode electrode 283 is formed on the organic light emitting layer 282 . The cathode electrode 283 is made of a transparent conductive material (TCO, TCO) capable of transmitting light, such as ITO or IZO, or magnesium (Mg), silver (Ag), or magnesium (Mg) and silver (Ag). It may be formed of a semi-transmissive conductive material such as an alloy. A capping layer may be formed on the cathode electrode 283 .

Then, an encapsulation film 290 is formed on the cathode electrode 283 . The encapsulation film 290 may include a first inorganic film 291 , an organic film 292 , and a second inorganic film 293 .

Specifically, a first inorganic layer 291 is formed to cover the cathode electrode 283, an organic layer 292 is formed on the first inorganic layer 291, and a second inorganic layer 292 is formed to cover the organic layer 292. An inorganic film 293 is formed. Each of the first and second inorganic layers 291 and 293 may be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, or titanium oxide. The organic layer 292 may be transparent to pass light emitted from the organic light emitting layer 282 . The organic layer 292 is preferably formed of an organic material capable of passing 99% or more of the light emitted from the organic light emitting layer 282 . (S105 in Fig. 7)

Sixthly, as shown in FIG. 8F, the encapsulation film 290 of the first substrate 111 and the color filters 321, 322, and 323 of the second substrate 112 are adhered using the adhesive layer 330, The first substrate 111 and the second substrate 112 are bonded together. The adhesive layer 330 may be a transparent adhesive resin. (S106 in Fig. 7)

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and may be variously modified and implemented without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be construed according to the claims, and all technical ideas within the equivalent range should be construed as being included in the scope of the present invention.

100: transparent display device 110: display panel
111: lower substrate 112: upper substrate
120: gate driver 130: source drive IC
140: flexible film 150: circuit board
160: timing controller 210: buffer film
220: thin film transistor 221: active layer
222: gate electrode 223: source electrode
224: drain electrode 230: gate insulating film
240: interlayer insulating film 250: protective film
260: light absorption film 270: planarization film
280: organic light emitting device 281: anode electrode
282: organic light emitting layer 253: cathode electrode
284: bank 290: encapsulation layer
291: first inorganic layer 292: organic layer
293: second inorganic film 310: black matrix
321: green color filter 322: blue color filter
323: red color filter 330: transparent adhesive layer

Claims (12)

It has pixels provided in a region defined by data lines, gate lines, and a cross structure of the data lines and the gate lines,
Each of the pixels,
a light emitting unit that emits light;
a transmissive portion that overlaps the light emitting portion and transmits incident light as it is; and
A light absorbing film disposed between light emitting units adjacent to each other in one direction;
A width of the light emitting portion in one direction is greater than a width of the transmission portion in one direction;
The one direction is a direction parallel to the data lines, the transparent display device. According to claim 1,
The width of the light emitting part in the other direction is narrower than the width of the transmission part in the other direction,
The other direction is a direction parallel to the gate lines,
The one direction and the other direction are directions that cross each other, the transparent display device. delete delete According to claim 1,
The transparent display device of claim 1 , wherein the transmission portion is defined by the light absorbing layer. According to claim 1,
Each of the pixels,
Further comprising a driving unit for driving the light emitting unit,
The transparent display device of claim 1 , wherein the driving unit overlaps the light emitting unit. According to claim 6,
the driving unit,
a thin film transistor disposed on the first substrate;
a planarization film disposed on the thin film transistor to planarize a level difference caused by the thin film transistor;
an anode electrode disposed on the planarization film;
a bank covering an edge of the anode electrode on the planarization film;
an organic light emitting layer disposed on the anode electrode and the bank; and
A cathode electrode disposed on the organic light emitting layer,
The anode electrode and the cathode electrode are made of a transparent metal material, the transparent display device. According to claim 7,
The transparent display device of claim 1 , wherein the light absorbing layer overlaps the bank, and the light absorbing layer has a wider width than the bank. According to claim 7,
the driving unit,
and a contact hole exposing a source or drain electrode of the thin film transistor through the light absorption layer and the planarization layer. According to claim 7,
the driving unit,
and a protective layer disposed between the thin film transistor and the light absorbing layer or between the light absorbing layer and the planarization layer. According to claim 7,
The transparent display device of claim 1 , wherein a light emitting portion emitting light is partitioned by the bank, and a transmission portion transmitting incident light is partitioned by the light absorbing film. Forming a thin film transistor on a first substrate;
forming a light absorbing film covering the thin film transistor on the thin film transistor;
forming a planarization film on the light absorbing film to planarize a step due to the thin film transistor;
forming a contact hole penetrating the light absorption layer and the planarization layer;
and forming an anode electrode connected to a source or drain electrode of the thin film transistor through the contact hole on the planarization layer.

Images