KR102566392B1 - Resin structure for imprint - Google Patents

Resin structure for imprint Download PDF

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KR102566392B1
KR102566392B1 KR1020200023582A KR20200023582A KR102566392B1 KR 102566392 B1 KR102566392 B1 KR 102566392B1 KR 1020200023582 A KR1020200023582 A KR 1020200023582A KR 20200023582 A KR20200023582 A KR 20200023582A KR 102566392 B1 KR102566392 B1 KR 102566392B1
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mass
imprint
compound
present
resin
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KR20210108681A (en
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박상신
김태완
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주식회사 미뉴타텍
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/32—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/32—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
    • C03C17/328—Polyolefins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/06—Polymers provided for in subclass C08G
    • C08F290/067—Polyurethanes; Polyureas
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D151/00—Coating compositions based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
    • C09D151/003—Coating compositions based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers grafted on to macromolecular compounds obtained by reactions only involving unsaturated carbon-to-carbon bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

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Abstract

본 발명의 일실시예에 따른 임프린트용 레진 구조체는 유리 기판과 레진 코팅층을 포함하는 임프린트용 레진 구조체로서, 상기 레진 코팅층은 상기 유리 기판 상에 형성되고, 상기 레진 코팅은 배합 비율이, 우레탄 아크릴레이트 올리고머(Urethane acrylate oligomer) 화합물 24.3902질량%, 인산 메타크릴레이트(Phosphate methacrylate) 화합물 3.0488질량%, N,N-디메아크릴아미드(Dimethylacrylamide) 화합물 18.2927질량%, 이소보르닐 아크릴레이트(Isobornyl acrylate) 화합물 36.5854질량%, 트리메틸올프로판 트리메타크릴레이트(Trimethylolpropane trimethacrylate) 화합물 3.0488질량%, 플루오로아크릴레이트(Fluoro Acrylate) 화합물 12.1951질량%, 2-하이드록시(Hydroxy)-2-메탈프로피오페논(methylpropiophenone) 화합물 2.4390질량%,로 구성된다.A resin structure for imprint according to an embodiment of the present invention is a resin structure for imprint including a glass substrate and a resin coating layer, wherein the resin coating layer is formed on the glass substrate, and the resin coating has a mixing ratio of urethane acrylate Oligomer (Urethane acrylate oligomer) compound 24.3902 mass%, Phosphate methacrylate compound 3.0488 mass%, N,N-Dimethylacrylamide compound 18.2927 mass%, Isobornyl acrylate compound 36.5854 Mass %, Trimethylolpropane trimethacrylate compound 3.0488 mass %, Fluoro Acrylate compound 12.1951 mass %, 2-hydroxy-2-methylpropiophenone compound 2.4390% by mass, and is composed of

Description

임프린트용 레진 구조체{RESIN STRUCTURE FOR IMPRINT}Resin structure for imprint {RESIN STRUCTURE FOR IMPRINT}

본 발명은 임프린트용 레진 구조체에 관한 것으로, 보다 상세하게는 웨이퍼 상의 패턴 형성에 사용되는 에칭 레지스트 패턴을 형성하기 위한 임프린트용 레진 구조체에 관한 것이다.The present invention relates to a resin structure for imprinting, and more particularly, to a resin structure for imprinting for forming an etching resist pattern used for pattern formation on a wafer.

LED 제품의 고성능화로 인한 PSS 기판의 1㎛ 급 미세패턴화의 진행이 가속화 되고 제조 원가를 낮 추기 위한 사파이어기판의 대형화가 추진되고 있다. 이에 따라 기존 공정인 i-line 포토 장비를 이용하 여 구현 할 수 있는 패턴의 사이즈에 한계가 있고(1㎛ 급 이하 불가능), 기판의 대형화(기존 4인치 내지 6인치)에 따라 포토장비에서 생산해 낼 수 있는 제품 생산량이 기판 면적에 반비례하여 감소하게 된다.Due to the high performance of LED products, the progress of 1㎛ level fine patterning of PSS substrates is accelerating, and the size of sapphire substrates is being promoted to lower manufacturing costs. Accordingly, there is a limit to the size of the pattern that can be implemented using the existing process, i-line photo equipment (1㎛ level or less is impossible), and the size of the substrate (existing 4 to 6 inches) The product yield that can be produced decreases in inverse proportion to the substrate area.

에칭 레지스트(Etch resist) 패턴을 형성하기 위해서는 일반적으로 고가의 노광 장비를 이용한 공정이 활용되고 있으나, 패턴의 고정세화, 복잡화 됨에 따라 고가 노광장비의 활용 가능성이 낮아 지고 제조 비용 또한 상승하는 단점이 있었다.In order to form an etch resist pattern, a process using expensive exposure equipment is generally used, but as the pattern is highly detailed and complex, the possibility of using expensive exposure equipment is reduced and the manufacturing cost is also increased. .

이를 극복하고자 미세패턴 구현에 아무런 제약이 없고 기판 대형화에 따른 장비 처리량(throughput)의 감소가 없는 임프린트 공정이 대안공정으로 주목 받게 되었고, 품질 및 생산성에서 기존 포토 공정과 비교 시 비교우위를 점하게 되었다. 이에 따라 임프린트 공정에 투입되어 소모성으로 사용되는 임프린트용 레진 및 몰드의 개발 및 양산 대응능력이 중요해지고 있다.To overcome this, the imprint process, which has no restrictions on the implementation of fine patterns and does not reduce equipment throughput due to the enlargement of the substrate, has attracted attention as an alternative process, and has a comparative advantage compared to the existing photo process in terms of quality and productivity. . Accordingly, the ability to develop and mass-produce imprint resins and molds that are used as consumables in the imprint process is becoming more important.

종래 기술에 따른 공정에서는 Si(실리콘) 기반의 비구면 광학렌즈를 제조하기 위하여 포지티브 방식의 포토 레지스트를 일정 형태의 원기둥 형태로 패턴을 구현한 서멀 리플로우(thermal reflow)라는 열공정을 통해 포토레지스트의 유리전이 온도 이상으로 가열하여 원기둥 패턴이 녹아 흘러내리는 현상을 이용하여 비구면 렌즈의 형상을 제조하였다.In the process according to the prior art, in order to manufacture a Si (silicon)-based aspherical optical lens, the positive photoresist is patterned in a cylindrical shape through a thermal process called thermal reflow, which implements a pattern of the photoresist. The shape of the aspherical lens was manufactured by using the phenomenon in which the cylindrical pattern melted and flowed down by heating above the glass transition temperature.

이후 녹아내린 렌즈 형태의 포토레지스트를 이용하여 건식 식각 방식으로 Si wafer(실리콘 웨이퍼)로 렌즈 형상을 에칭해 내는 방식으로 Si(실리콘) 렌즈를 제조하였다. 하지만 이러한 서멀 리플로우(thermal reflow) 공정을 이용하여 렌즈를 제작할 경우 웨이퍼(wafer) 마다의 포토레지스트의 흘러내린 형상의 정확한 재현 및 웨이퍼 내 마이크로 미터 수준의 렌즈 형상 균일도가 확보되지 않아 제품 수율 및 생산성에 심각한 문제를 내포하고 있게 된다.Afterwards, a Si (silicon) lens was manufactured by etching the lens shape with a Si wafer (silicon wafer) in a dry etching method using the melted lens-shaped photoresist. However, when manufacturing lenses using this thermal reflow process, accurate reproduction of the flowed shape of the photoresist per wafer and uniformity of the lens shape at the micrometer level within the wafer are not secured, resulting in product yield and productivity is fraught with serious problems.

이를 극복하기 위해 일정 비구면 형상의 렌즈 모양을 본뜬 몰드를 이용하여 Si 웨이퍼(wafer)상에 임프린트 공정을 통해 렌즈 형상을 구현하게 되면 복잡하고 재현성 없는 서멀 리플로우(thermal reflow) 공정을 거치지 않고 대량으로 균일한 품질의 렌즈를 손쉽게 제작할 수 있는 장점이 있다. In order to overcome this, if the lens shape is implemented through an imprint process on a Si wafer using a mold that imitates a lens shape of a certain aspherical shape, a large amount can be produced without going through a complicated and non-reproducible thermal reflow process. It has the advantage of being able to easily manufacture lenses of uniform quality.

한편, WGP와 같은 가시광 및 UV광 편광의 효과를 내는 편광 유닛(unit)의 제조를 위해서는 100nm 이하의 메탈 배선이 유리(glass) 혹은 Qz(Quartz: 석영) 기판상에 일정하게 배열이 되어야 한다.On the other hand, in order to manufacture a polarization unit that produces visible light and UV light polarization effects such as WGP, metal wires of 100 nm or less must be regularly arranged on a glass or Qz (Quartz) substrate.

종래 기술에 따른 공정에서는 값비싼 ArF(불화아르곤) 노광장비를 이용하여 메탈 막 위에 포토 레지스트 패턴을 구현한 이후 건식 식각 공정을 통해 메탈 배선을 제조하는 방식으로 제품을 생산하였으나, 고가의 ArF(불화아르곤) 노광 장비를 이용하기 위해서는 수백억의 기초 투자 금액이 소요되어 제품의 양산 적용시 본 제품이 가지는 성능 가치에 비해 지나친 제조 원가 상승으로 경쟁력을 확보할 수 없었다.In the process according to the prior art, a product was produced by implementing a photoresist pattern on a metal film using expensive ArF (Argon Fluoride) exposure equipment and then manufacturing a metal wire through a dry etching process, but expensive ArF (Fluoride Argon) exposure equipment required a basic investment of tens of billions of won, so it was not possible to secure competitiveness due to an excessive increase in manufacturing cost compared to the performance value of this product when applied to mass production.

최근에는 이를 극복하기 위해 고가의 ArF(불화아르곤) 노광 장비를 사용하는 대신 대면적의 기판상에 높은 생산성 및 낮은 공정 비용으로 대량 패턴을 제작할 수 있는 임프린트 기술에 대한 요구가 높아지고 있다.Recently, there is a growing demand for imprint technology capable of producing large-scale patterns with high productivity and low process cost on a large-area substrate instead of using expensive argon fluoride (ArF) exposure equipment to overcome this problem.

본 발명은 상기와 같은 문제점을 해결하기 위한 것으로서, 본 발명은PSS(Patterned Sapphire Substrate)용 임프린트 레진 및 몰드 개발을 통해, 기존 포토 공정용 PR(포토 레지스트) 대비 높은 에칭 선택비를 보유한 임프린트 레진의 개발과, 임프린트 레진의 공정 적용시 발생할 수 있는 불량의 최소화 및 품질 안정성 확보를 위해 코팅 안정성, 이형성, 경화성, 기재 부착성 등을 확보한 재료를 적용한 임프린트용 레진 및 몰드를 제공하여, 상위버전 제품 개발시 우선 개발 대응을 통한 LED 산업의 국가 경쟁력 제고하고자 한다.The present invention is intended to solve the above problems, and the present invention is to develop an imprint resin and mold for PSS (Patterned Sapphire Substrate), to develop an imprint resin having a high etching selectivity compared to conventional PR (photoresist) for a photo process. In order to minimize defects that may occur during development and application of the imprint resin process and to secure quality stability, we provide resin and mold for imprint using materials that have secured coating stability, releasability, curability, and adhesion to substrates, and provide higher-end products. At the time of development, we aim to improve the national competitiveness of the LED industry by responding to development first.

또한, 본 발명은 Si(실리콘) 렌즈용 임프린트 레진 및 몰드 개발을 통해, 현재 낮은 수율로 생산되고 있는 Si(실리콘) 렌즈의 생산 공정을 임프린트 공정으로 대체하여 생산 수율 및 품질을 향상시키고, 임프린트용 레진의 적용시 렌즈 형상의 전사 균일도 및 패턴 균일도 확보를 위해 재료의 수축 안정성, 에칭 선택비의 안정적 구현을 통해, 임프린트를 활용한 경쟁력 확보가 가능하도록 하고자 한다.In addition, the present invention improves the production yield and quality by replacing the production process of Si (silicon) lenses, which are currently produced at low yield, with an imprint process through the development of imprint resin and mold for Si (silicon) lenses, and for imprint In order to secure the transfer uniformity and pattern uniformity of the lens shape when applying resin, it is intended to secure competitiveness using imprinting through stable implementation of material shrinkage stability and etching selectivity.

또한, 본 발명은 WGP(Wire Grid Polarizer)용 임프린트 레진 및 몰드 개발 임프린트를 이용해, WGP 관련 산업의 개화 추진 및 신규 제품 수요 창출 고부가가치 제품에 개발 및 생산 역량을 집중하여 기업 이윤을 극대화할 수 있도록 하고자 한다.In addition, the present invention uses imprint resin and mold development imprint for WGP (Wire Grid Polarizer) to promote the blooming of WGP-related industries and create new product demand. To maximize corporate profits by concentrating development and production capabilities on high value-added products want to do

본 발명의 일실시예에 따른 임프린트용 레진 구조체는 유리 기판과 레진 코팅층을 포함하는 임프린트용 레진 구조체로서, 상기 레진 코팅층은 상기 유리 기판 상에 형성되고, 상기 레진 코팅층의 배합 비율이, 우레탄 아크릴레이트 올리고머(Urethane acrylate oligomer) 화합물 24.3902질량%, 인산 메타크릴레이트(Phosphate methacrylate) 화합물 3.0488질량%, N,N-디메아크릴아미드(Dimethylacrylamide) 화합물 18.2927질량%, 이소보르닐 아크릴레이트(Isobornyl acrylate) 화합물 36.5854질량%, 트리메틸올프로판 트리메타크릴레이트(Trimethylolpropane trimethacrylate) 화합물 3.0488질량%, 플루오로아크릴레이트(Fluoro Acrylate) 화합물 12.1951질량%, 2-하이드록시(Hydroxy)-2-메탈프로피오페논(methylpropiophenone) 화합물 2.4390질량%로 구성된다.A resin structure for imprint according to an embodiment of the present invention is a resin structure for imprint including a glass substrate and a resin coating layer, wherein the resin coating layer is formed on the glass substrate, and the mixing ratio of the resin coating layer is urethane acrylate Oligomer (Urethane acrylate oligomer) compound 24.3902 mass%, Phosphate methacrylate compound 3.0488 mass%, N,N-Dimethylacrylamide compound 18.2927 mass%, Isobornyl acrylate compound 36.5854 Mass %, Trimethylolpropane trimethacrylate compound 3.0488 mass %, Fluoro Acrylate compound 12.1951 mass %, 2-hydroxy-2-methylpropiophenone compound It is composed of 2.4390% by mass.

본 발명에 따르면 PSS(Patterned Sapphire Substrate) 제조 공정에서 양산 단계에서 코팅 안정성, 에칭 선택비, 임프린트 공정 편의성의 최적화를 위한 재료 개선이 가능하다.According to the present invention, in the PSS (Patterned Sapphire Substrate) manufacturing process, it is possible to improve materials for optimizing coating stability, etching selectivity, and convenience of the imprint process in the mass production stage.

또한, 본 발명에 따르면 PSS용 임프린트 공정에 투입되는 임프린트용 몰드의 수명 확보 및 제품의 품질 확보를 위한 몰드용 재료의 개선과 양산 공정의 검증을 제공할 수 있다.In addition, according to the present invention, it is possible to improve the material for the mold and verify the mass production process in order to secure the life of the imprint mold introduced into the imprint process for PSS and to secure product quality.

또한, 본 발명에 따르면 WGP(Wire Grid Polarizer)용 임프린트 공정에 사용되는 임프린트 장비에서 향상된 코팅성 및 임프린트 공정을 제공할 수 있다.In addition, according to the present invention, it is possible to provide improved coating properties and an imprint process in the imprint equipment used in the imprint process for WGP (Wire Grid Polarizer).

또한, 본 발명에 따르면 Si(실리콘) 렌즈용 임프린트 공정에서 에칭 진행시 Si 렌즈의 보다 형성 향상된 특성과 임프린트 코팅성 및 선택비 조정을 제공할 수 있다.In addition, according to the present invention, in the imprint process for Si (silicon) lenses, it is possible to provide improved properties, imprint coating properties, and selectivity adjustment of Si lenses during etching.

도 1은 본 발명의 일실시예에 따른 PSS(Patterned Sapphire Substrate) 제조를 위한 임프린트 패턴을 도시한 도면이다.
도 2는 본 발명의 일실시예에 따른 임프린트 패턴을 이용한 PSS 에칭 제품을 도시한 도면이다.
도 3은 본 발명의 일실시예에 따른 WGP(Wire Grid Polarizer) 제품 제조를 위한 임프린트 패턴을 도시한 도면이다.
도 4는 본 발명의 일실시예에 따른 IR(적외선) 렌즈로 사용되는 Si(실리콘) 렌즈를 도시한 도면이다.
도 5는 본 발명의 일실시예에 따른 임프린트용 레진 구조체를 설명하기 위한 도면이다.
도 6은 본 발명의 일실시예에 따른 임프린트용 레진 구조체의 레진 코팅의 배합 비율을 설명하기 위한 표를 도시한 도면이다.
도 7 내지 도 12는 본 발명의 일실시예에 따른 임프린트용 레진 구조체를 구성하는 화합물을 도시한 도면이다.
도 13은 종래 기술과 본 발명에 따른 임프린트용 레진 구조체의 수축 현상을 비교한 도면이다.
도 14는 종래 기술과 본 발명에 따른 임프린트용 레진 구조체의 팽창 속도를 비교한 도면이다.
도 15 내지 도 17은 본 발명에 따른 임프린트용 레진 구조체의 공정 조건 설정에 따른 특성을 설명하기 위한 도면이다.1 is a diagram illustrating an imprint pattern for manufacturing a Patterned Sapphire Substrate (PSS) according to an embodiment of the present invention.
2 is a diagram showing a PSS etching product using an imprint pattern according to an embodiment of the present invention.
3 is a diagram showing an imprint pattern for manufacturing a WGP (Wire Grid Polarizer) product according to an embodiment of the present invention.
4 is a diagram showing a Si (silicon) lens used as an IR (infrared ray) lens according to an embodiment of the present invention.
5 is a view for explaining a resin structure for imprinting according to an embodiment of the present invention.
6 is a diagram showing a table for explaining a mixing ratio of a resin coating of a resin structure for imprint according to an embodiment of the present invention.
7 to 12 are diagrams illustrating compounds constituting a resin structure for imprinting according to an embodiment of the present invention.
13 is a view comparing shrinkage of the resin structure for imprinting according to the prior art and the present invention.
14 is a diagram comparing the expansion rate of the resin structure for imprint according to the prior art and the present invention.
15 to 17 are diagrams for explaining characteristics according to process condition settings of a resin structure for imprinting according to the present invention.

본 발명은 다양한 변환을 가할 수 있고 여러 가지 실시예를 가질 수 있는 바, 특정 실시예들을 도면에 예시하고 상세한 설명에 상세하게 설명하고자 한다. 그러나, 이는 본 발명을 특정한 실시 형태에 대해 한정하려는 것이 아니며, 본 발명의 사상 및 기술 범위에 포함되는 모든 변환, 균등물 내지 대체물을 포함하는 것으로 이해되어야 한다.Since the present invention can apply various transformations and have various embodiments, specific embodiments will be illustrated in the drawings and described in detail in the detailed description. However, it should be understood that this is not intended to limit the present invention to specific embodiments, and includes all transformations, equivalents, and substitutes included in the spirit and scope of the present invention.

본 발명을 설명함에 있어서, 관련된 공지 기술에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우 그 상세한 설명을 생략한다. 또한, 본 명세서의 설명 과정에서 이용되는 숫자(예를 들어, 제1, 제2 등)는 하나의 구성요소를 다른 구성요소와 구분하기 위한 식별기호에 불과하다.In describing the present invention, if it is determined that a detailed description of related known technologies may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. In addition, numbers (eg, first, second, etc.) used in the description process of this specification are only identifiers for distinguishing one component from another component.

또한, 명세서 전체에서, 일 구성요소가 다른 구성요소와 "연결된다" 거나 "접속된다" 등으로 언급된 때에는, 상기 일 구성요소가 상기 다른 구성요소와 직접 연결되거나 또는 직접 접속될 수도 있지만, 특별히 반대되는 기재가 존재하지 않는 이상, 중간에 또 다른 구성요소를 매개하여 연결되거나 또는 접속될 수도 있다고 이해되어야 할 것이다. 또한, 명세서 전체에서, 어떤 부분이 어떤 구성요소를 "포함"한다고 할 때, 이는 특별히 반대되는 기재가 없는 한 다른 구성요소를 제외하는 것이 아니라 다른 구성요소를 더 포함할 수 있는 것을 의미한다.In addition, throughout the specification, when one component is referred to as “connected” or “connected” to another component, the one component may be directly connected or directly connected to the other component, but in particular Unless otherwise described, it should be understood that they may be connected or connected via another component in the middle. In addition, throughout the specification, when a certain component is said to "include", it means that it may further include other components without excluding other components unless otherwise stated.

본 발명에 따르면 각 응용 분야의 요구 조건에 맞는 특성을 지닌 임프린트용 레진의 개발을 위한 것이다.According to the present invention, it is for the development of imprint resins having characteristics that meet the requirements of each application field.

이하, 첨부된 도면들을 참조하여 본 발명의 실시예를 상세히 설명한다. Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명의 일실시예에 따른 PSS(Patterned Sapphire Substrate) 제조를 위한 임프린트 패턴을 도시한 도면이고, 도 2는 본 발명의 일실시예에 따른 임프린트 패턴을 이용한 PSS 에칭 제품을 도시한 도면이고, 도 3은 본 발명의 일실시예에 따른 WGP(Wire Grid Polarizer) 제품 제조를 위한 임프린트 패턴을 도시한 도면이고, 도 4는 본 발명의 일실시예에 따른 IR(적외선) 렌즈로 사용되는 Si(실리콘) 렌즈를 도시한 도면이다.1 is a view showing an imprint pattern for manufacturing PSS (Patterned Sapphire Substrate) according to an embodiment of the present invention, and FIG. 2 is a view showing a PSS etching product using an imprint pattern according to an embodiment of the present invention. 3 is a view showing an imprint pattern for manufacturing a WGP (Wire Grid Polarizer) product according to an embodiment of the present invention, and FIG. 4 is used as an IR (infrared) lens according to an embodiment of the present invention. It is a drawing showing a Si (silicon) lens.

본 발명에 따르면 PSS(Patterned Sapphire Substrate) 제조 공정에서 양산 단계에서 코팅 안정성, 에칭 선택비, 임프린트 공정 편의성의 최적화를 위한 재료 개선이 가능하며, PSS용 임프린트 공정에 투입되는 임프린트용 몰드의 수명 확보 및 제품의 품질 확보를 위한 몰드용 재료의 개선과 양산 공정의 검증을 제공할 수 있다.According to the present invention, in the PSS (Patterned Sapphire Substrate) manufacturing process, it is possible to improve materials for optimizing coating stability, etching selectivity, and convenience of the imprint process in the mass production stage, securing the lifespan of the imprint mold used in the imprint process for PSS, and We can provide improvement of mold materials and verification of mass production process to secure product quality.

또한, 본 발명에 따르면 WGP(Wire Grid Polarizer)용 임프린트 공정에 사용되는 임프린트 장비에서 향상된 코팅성 및 임프린트 공정을 제공할 수 있으며, Si(실리콘) 렌즈용 임프린트 공정에서 에칭 진행시 Si 렌즈의 보다 형성 향상된 특성과 임프린트 코팅성 및 선택비 조정을 제공할 수 있다.In addition, according to the present invention, the imprint equipment used in the imprint process for WGP (Wire Grid Polarizer) can provide improved coating properties and an imprint process, and in the imprint process for Si (silicon) lenses, more formation of Si lenses occurs during etching. Improved properties, imprint coating properties and selectivity adjustment can be provided.

도 5는 본 발명의 일실시예에 따른 임프린트용 레진 구조체를 설명하기 위한 도면이고, 도 6은 본 발명의 일실시예에 따른 임프린트용 레진 구조체의 레진 코팅의 배합 비율을 설명하기 위한 표를 도시한 도면이고, 도 7 내지 도 12는 본 발명의 일실시예에 따른 임프린트용 레진 구조체를 구성하는 화합물을 도시한 도면이다.5 is a view for explaining a resin structure for imprint according to an embodiment of the present invention, and FIG. 6 is a table for explaining the mixing ratio of the resin coating of the resin structure for imprint according to an embodiment of the present invention. 7 to 12 are diagrams illustrating compounds constituting a resin structure for imprinting according to an embodiment of the present invention.

도 5에 도시된 바와 같이 본 발명의 일실시예에 따른 임프린트용 레진 구조체는 유리 기판과 레진 코팅층을 포함하는 임프린트용 레진 구조체로서, 상기 레진 코팅층이 상기 유리 기판 상에 형성된다.As shown in FIG. 5 , a resin structure for imprint according to an embodiment of the present invention is a resin structure for imprint including a glass substrate and a resin coating layer, and the resin coating layer is formed on the glass substrate.

본 발명의 일실시예에 따른 임프린트용 레진 구조체는 코팅 엣지(Coating Edge) 부분인 A 영역은 수축 현상의 감소가 필요하고, 코팅 내부 부분인 B 영역은 팽창 속도의 증가가 필요하며, 잉크젯 토출 문턱전압이 낮은 레진을 통해 공정 설정(set up)이 용이하다.In the resin structure for imprint according to an embodiment of the present invention, area A, which is a coating edge portion, needs to reduce shrinkage, and area B, which is an inner portion of the coating, needs an increase in expansion speed, and an inkjet discharge threshold. It is easy to set up the process through the low voltage resin.

보다 구체적으로, 도 6에 도시된 바와 같이 상기 레진 코팅은 배합 비율이, 우레탄 아크릴레이트 올리고머(Urethane acrylate oligomer) 화합물 12.1951질량%(도 6의 CHTU-1300 참조), 인산 메타크릴레이트(Phosphate methacrylate) 화합물 3.0488질량%, N,N-디메아크릴아미드(Dimethylacrylamide) 화합물 18.2927질량%, 이소보르닐 아크릴레이트(Isobornyl acrylate) 화합물 36.5854질량%, 우레탄 아크릴레이트 올리고머(Urethane acrylate oligomer) 화합물 12.1951질량%(도 6의 MU9800 참조), 트리메틸올프로판 트리메타크릴레이트(Trimethylolpropane trimethacrylate) 화합물 3.0488질량%, 플루오로아크릴레이트(Fluoro Acrylate) 화합물 12.1951질량%, 2-하이드록시(Hydroxy)-2-메탈프로피오페논(methylpropiophenone) 화합물 2.4390질량%,로 구성된다.More specifically, as shown in FIG. 6, the resin coating has a blending ratio of 12.1951% by mass of a urethane acrylate oligomer compound (see CHTU-1300 in FIG. 6), phosphate methacrylate Compound 3.0488% by mass, N,N-Dimethylacrylamide compound 18.2927% by mass, Isobornyl acrylate compound 36.5854% by mass, Urethane acrylate oligomer compound 12.1951% by mass (FIG. 6 MU9800 reference), Trimethylolpropane trimethacrylate compound 3.0488% by mass, Fluoro Acrylate compound 12.1951% by mass, 2-hydroxy-2-methylpropiophenone ) 2.4390% by mass of the compound.

이때, 도 7은 아크릴레이트 올리고머(Urethane acrylate oligomer) 화합물과 우레탄 아크릴레이트 올리고머(Urethane acrylate oligomer) 화합물, 도 8은 인산 메타크릴레이트(Phosphate methacrylate) 화합물, 도 9는 N,N-디메아크릴아미드(Dimethylacrylamide) 화합물, 도 10은 이소보르닐 아크릴레이트(Isobornyl acrylate) 화합물, 도 11은 트리메틸올프로판 트리메타크릴레이트(Trimethylolpropane trimethacrylate) 화합물, 도 12는 2-하이드록시(Hydroxy)-2-메탈프로피오페논(methylpropiophenone) 화합물의 화학식을 도시한 도면이다.At this time, Figure 7 is an acrylate oligomer compound and a urethane acrylate oligomer compound, Figure 8 is a phosphoric acid methacrylate (Phosphate methacrylate) compound, Figure 9 is N, N-dimethacrylamide ( Dimethylacrylamide compound, Figure 10 is an isobornyl acrylate compound, Figure 11 is a trimethylolpropane trimethacrylate compound, Figure 12 is a 2-hydroxy-2-metalpropiope It is a diagram showing the chemical formula of the non (methylpropiophenone) compound.

도 13은 종래 기술과 본 발명에 따른 임프린트용 레진 구조체의 수축 현상을 비교한 도면이고, 도 14는 종래 기술과 본 발명에 따른 임프린트용 레진 구조체의 팽창 속도를 비교한 도면이며, 도 15 내지 도 17은 본 발명에 따른 임프린트용 레진 구조체의 공정 조건 설정에 따른 특성을 설명하기 위한 도면이다.13 is a view comparing shrinkage of the resin structure for imprint according to the prior art and the present invention, and FIG. 14 is a view comparing the expansion rate of the resin structure for imprint according to the prior art and the present invention, and FIGS. 17 is a diagram for explaining characteristics of the resin structure for imprint according to process condition settings according to the present invention.

도 13을 참조하면, 본 발명에 따른 임프린트용 레진 구조체는 종래 기술과 비교하여 코팅 엣지(Coating Edge) 부분에서의 수축 현상이 감소되는 것을 확인할 수 있으며, 도 14를 참조하면 본 발명에 따른 임프린트용 레진 구조체는 종래 기술과 비교하여 코팅 내부 부분에서의 팽창속도가 증가하는 것을 확인할 수 있으며, 도 15 내지 도 17을 참조하면, 레진의 잉크젯 토출 문턱 전압이 낮아져 가용 전압 범위가 9 내지 17 V로 증가되는 것을 확인할 수 있다.Referring to FIG. 13, it can be confirmed that the resin structure for imprint according to the present invention has reduced shrinkage at the coating edge portion compared to the prior art. Referring to FIG. 14, for imprint according to the present invention It can be seen that the resin structure has an increased expansion rate in the coating inner portion compared to the prior art, and referring to FIGS. 15 to 17, the inkjet discharge threshold voltage of the resin is lowered, increasing the available voltage range to 9 to 17 V can confirm that it is.

이상에서는 본 발명의 실시예를 참조하여 설명하였지만, 해당 기술 분야에서 통상의 지식을 가진 자라면 하기의 특허 청구의 범위에 기재된 본 발명의 사상 및 영역으로부터 벗어나지 않는 범위 내에서 본 발명을 다양하게 수정 및 변경시킬 수 있음을 쉽게 이해할 수 있을 것이다.Although the above has been described with reference to the embodiments of the present invention, those skilled in the art will variously modify the present invention within the scope not departing from the spirit and scope of the present invention described in the claims below. And it will be readily understood that it can be changed.

Claims (1)

유리 기판 및 상기 유리 기판 상에 형성되는 레진 코팅층을 포함하는 임프린트용 레진 구조체로서,
상기 레진 코팅층의 배합 비율이,
우레탄 아크릴레이트 올리고머(Urethane acrylate oligomer) 화합물 24.3902질량%,
인산 메타크릴레이트(Phosphate methacrylate) 화합물 3.0488질량%,
N,N-디메아크릴아미드(Dimethylacrylamide) 화합물 18.2927질량%,
이소보르닐 아크릴레이트(Isobornyl acrylate) 화합물 36.5854질량%,
트리메틸올프로판 트리메타크릴레이트(Trimethylolpropane trimethacrylate) 화합물 3.0488질량%
플루오로아크릴레이트(Fluoro Acrylate) 화합물 12.1951질량%,
2-하이드록시(Hydroxy)-2-메탈프로피오페논(methylpropiophenone) 화합물 2.4390질량%,
인 임프린트용 레진 구조체.
A resin structure for imprint comprising a glass substrate and a resin coating layer formed on the glass substrate,
The blending ratio of the resin coating layer,
Urethane acrylate oligomer compound 24.3902% by mass,
Phosphate methacrylate compound 3.0488% by mass,
N,N-dimethacrylamide compound 18.2927% by mass,
Isobornyl acrylate compound 36.5854% by mass,
Trimethylolpropane trimethacrylate compound 3.0488% by mass
12.1951% by mass of fluoroacrylate compound,
2-hydroxy-2-methylpropiophenone compound 2.4390% by mass,
Resin structure for in-printing.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101427685B1 (en) * 2006-07-10 2014-08-07 후지필름 가부시키가이샤 Photocurable composition and method of pattern-formation using the same

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