KR102560436B1 - Silicon wafer evaluation method and silicon wafer manufacturing method - Google Patents

Abstract

The present invention is a method for evaluating a silicon wafer, comprising a total surface defect measurement step of measuring surface defects in advance on the silicon wafer, a cleaning step of alternately repeating oxidation treatment with ozone water and oxide film removal treatment with hydrofluoric acid under conditions in which the oxide film formed on the surface of the silicon wafer is not completely removed, surface defect measurement of the silicon wafer after the cleaning step, and measuring the increased defects with respect to the defects measured in the total surface defect measurement step. A silicon wafer evaluation method characterized by having a defect measuring step, repeating the cleaning step and the increasing defect measuring step alternately a plurality of times, and evaluating the silicon wafer based on the measurement result of the increasing defect after each cleaning step. Accordingly, there is provided a silicon wafer evaluation method capable of evaluating only defects caused by processing such as polishing, excluding defects caused by crystals and particles generated by cleaning.

Description

Silicon wafer evaluation method and silicon wafer manufacturing method

The present invention relates to a silicon wafer evaluation method and a silicon wafer manufacturing method.

Wafer quality after polishing is improving day by day, and in checking the quality of wafers after polishing and cleaning, it is becoming difficult to discriminate whether the confirmed abnormality is a polisher, a cleaner, or a crystallizer.

Currently, in order to evaluate the quality of the polished state, there is no method other than following the trend of quality by polishing a large number of wafers, and evaluation is difficult because the difference in quality depends on various external factors. Further, in the prior art, it was very difficult to detect an abnormality in polishing quality even if the polished wafer was only measured once, and a conventional extraction inspection was performed during manufacturing of a vast amount of wafers. In addition, in many cases, the time was already missed at the stage where the outlier was clearly known.

As a conventional surface quality evaluation method, there is the SC1-RT method, which is a method for evaluating defects and metal contamination caused by silicon crystals, and is not a method for evaluating defects (processing defects) caused by processing such as polishing (Patent Document 1).

In addition, since the SC1-RT method uses an aqueous alkali solution, in principle, since both Si and SiO ₂ are etched, the wafer surface roughness is significantly deteriorated.

In addition, the conventional wafer quality evaluation method using ozone water and HF treatment includes a step of removing (exfoliating) all of the native oxide film (Patent Document 2), and when the oxide film is completely removed in this way, defects caused by crystals become visible, and processing defects such as polishing cannot be evaluated.

Japanese Unexamined Patent Publication No. 2002-353281 Japanese Unexamined Patent Publication No. 2013-004760

The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for evaluating a silicon wafer capable of evaluating only defects caused by processing such as polishing, excluding defects caused by crystals and particles generated by cleaning.

In order to solve the above problems, the present invention is a silicon wafer evaluation method,

For the silicon wafer, a front surface defect measurement step of measuring surface defects in advance;

With respect to the silicon wafer, a cleaning step of alternately repeating an oxidation treatment with ozone water and an oxide film removal treatment with hydrofluoric acid under the condition that the oxide film formed on the surface of the silicon wafer is not completely removed;

An increased defect measurement step of measuring surface defects on the silicon wafer after the cleaning step and measuring increased defects with respect to the defects measured in the surface defect measurement step,

A silicon wafer evaluation method is provided, wherein the cleaning step and the increasing defect measuring step are alternately repeated a plurality of times, and the silicon wafer is evaluated based on the measurement result of the increasing defect after each cleaning step.

With such a silicon wafer evaluation method, only processing defects can be made visible without realizing defects caused by crystallization in the cleaning process, and by looking at the trend of increasing defects measured after each cleaning process, it is possible to evaluate only processing defects excluding defects caused by crystals or particles generated by cleaning, etc., and the quality of processing such as polishing can be evaluated.

In this case, it is preferable to carry out the oxide film removal treatment with hydrofluoric acid under the conditions of not completely removing the oxide film, with a hydrofluoric acid concentration of 0.1 to 1.0% and a treatment time of 2 to 20 seconds.

Since the natural oxide film thickness can be controlled by such an oxide film removal treatment using hydrofluoric acid, the oxide film can be removed more reliably without completely removing the oxide film.

In this case, it is preferable to alternately (alternately) repeat the oxidation treatment with the ozone water and the oxide film removal treatment with the hydrofluoric acid five or more times in the cleaning step.

In this way, by repeating the oxidation treatment with ozone water and the oxide film removal treatment with hydrofluoric acid five or more times, processing defects can be reliably made visible, and thus processing quality can be evaluated more accurately.

In this case, it is preferable to use a silicon wafer after mirror polishing as the silicon wafer.

In the silicon wafer evaluation method of the present invention, polishing quality can be evaluated by using a silicon wafer after mirror polishing.

Further, in the silicon wafer evaluation method of the present invention, based on the measurement results of the increased defects after each of the cleaning steps, it is possible to evaluate defects that are processing machines of the silicon wafer.

In the silicon wafer evaluation method of the present invention, only processing defects such as polishing can be made visible in the cleaning process, and only defects caused by the processing machine can be evaluated by looking at the increasing trend of increased defects measured after each cleaning process. Therefore, it is possible to evaluate the processing quality.

In addition, the present invention is a method for manufacturing a silicon wafer to be a product by performing mirror polishing on a silicon wafer before mirror polishing,

A step of preparing a silicon wafer for experiments before mirror polishing;

a step of performing mirror polishing on the experimental silicon wafer before the mirror polishing under predetermined mirror polishing conditions;

A total surface defect measurement step of measuring surface defects in advance on the experimental silicon wafer;

A cleaning step of alternately repeating an oxidation treatment with ozone water and an oxide film removal treatment with hydrofluoric acid under the condition that the oxide film formed on the surface of the experimental silicon wafer is not completely removed, with respect to the experimental silicon wafer;

An incremental defect measurement step of measuring surface defects on the experimental silicon wafer after the cleaning step and measuring increased defects with respect to the defects measured in the total surface defect measurement step,

The cleaning process and the increasing defect measurement process are alternately repeated a plurality of times, and the experimental silicon wafer is evaluated based on the measurement result of the increasing defect after each cleaning process;

Based on the evaluation of the experimental silicon wafer, specify the mirror polishing conditions in the mirror polishing such that the polishing quality after mirror polishing of the silicon wafer before mirror polishing becomes a desired polishing quality,

Provided is a silicon wafer manufacturing method characterized by manufacturing a silicon wafer to be the product by performing mirror polishing on the silicon wafer before the mirror polishing under the specific mirror polishing conditions.

With this silicon wafer manufacturing method, it is possible to present only processing defects without realizing defects caused by crystallization in the cleaning process for experimental silicon wafers, and by observing the increasing trend of defects measured after each cleaning process, it is possible to evaluate only processing defects excluding defects caused by crystals or particles generated by cleaning. By this experiment, with respect to the silicon wafer before mirror polishing, under what mirror polishing conditions it is possible to specify whether a desired polishing quality is obtained. By manufacturing a silicon wafer under such specific mirror polishing conditions, a mirror polished silicon wafer having a desired polishing quality can be manufactured.

In the silicon wafer evaluation method of the present invention, only processing defects can be made visible without realizing defects caused by crystallization in the cleaning process, and by looking at the increasing trend of defects measured after each cleaning step, only processing defects due to polishing can be evaluated, excluding defects caused by crystals and particles generated by cleaning. In addition, in the present invention, cleaning can be performed without deteriorating the surface roughness of the wafer, and measurement with a very small particle diameter is possible. Further, in the silicon wafer manufacturing method of the present invention, a mirror polished silicon wafer having a desired polishing quality can be manufactured by specifying mirror polishing conditions based on evaluation of experimental silicon wafers in which only processing defects are evaluated.

1 is a process flow diagram showing one embodiment of a silicon wafer evaluation method of the present invention.
Fig. 2 is a graph showing the relationship between the total number of repetitions of treatment with ozone water → treatment with hydrofluoric acid and the number of increasing defects in Examples.
Fig. 3 shows (A) an SEM image of the wafer surface observed after cleaning in Example, and (B) a SEM image of defects detected in Comparative Example.

As described above, in the conventional silicon wafer evaluation method, there was a problem that defects caused by crystallization occurred and processing defects such as polishing could not be evaluated.

And, as a result of repeated intensive studies to solve the above problem, the inventors of the present invention alternately repeat a cleaning process in which oxidation treatment with ozone water and oxide film removal treatment with hydrofluoric acid are alternately repeated under the condition that the oxide film formed on the surface of the silicon wafer is not completely removed, and the increase defect measurement step of measuring surface defects of the silicon wafer after the cleaning step and measuring the increased defects with respect to the defects measured in the total surface defect measurement step is alternately repeated a plurality of times, and the increased defects after each cleaning step When evaluating a silicon wafer based on the measurement results, it was found that only defects caused by processing factors such as polishing could be evaluated without realizing defects caused by crystallization in the cleaning process, and only defects caused by processing factors could be evaluated, and the present invention was reached.

That is, the present invention is a silicon wafer evaluation method,

With respect to the silicon wafer, a total surface defect measurement step of measuring surface defects in advance;

With respect to the silicon wafer, a cleaning step of alternately repeating an oxidation treatment with ozone water and an oxide film removal treatment with hydrofluoric acid under the condition that the oxide film formed on the surface of the silicon wafer is not completely removed;

An increased defect measurement step of measuring surface defects on the silicon wafer after the cleaning step and measuring increased defects with respect to the defects measured in the total surface defect measurement step,

A silicon wafer evaluation method is provided, wherein the cleaning step and the increasing defect measuring step are alternately repeated a plurality of times, and the silicon wafer is evaluated based on the measurement result of the increasing defect after each cleaning step.

Hereinafter, the evaluation method of the silicon wafer of this invention is demonstrated. 1 is a process flow diagram showing one embodiment of the silicon wafer evaluation method of the present invention.

The silicon wafer to be evaluated is not particularly limited, but a silicon wafer after mirror polishing is preferable. If a silicon wafer after mirror polishing is used, polishing machine defects such as PID (Polishing Induced Defect) can be evaluated, and polishing quality can be evaluated.

First, a total surface defect measurement step is performed in which surface defects are measured in advance for a silicon wafer to be evaluated (Fig. 1(a)). For example, it can be performed using Surfscan SP5 manufactured by KLA-Tencor. Since processing defects rarely have a particle size larger than 40 nm, a measured particle size of 40 nm or less is sufficient.

Subsequently, a cleaning process is performed in which oxidation treatment with ozone water and oxide film removal treatment with hydrofluoric acid are alternately repeated under the condition that the oxide film formed on the surface of the silicon wafer is not completely removed (FIG. 1(b)). It is preferable to perform this cleaning step with a single wafer type cleaning device.

The cleaning step (b) is a step of making machining defects such as polishing visible. By removing the oxide film with hydrofluoric acid and re-oxidizing the wafer surface with ozone water without completely removing the oxide film, only processing defects such as polishing can be made visible without making crystal defects visible.

In the conventional SC1-RT method (e.g., Japanese Unexamined Patent Publication No. 2000-208578) or in the conventional wafer quality evaluation method using ozone water and HF treatment, processing defects such as polishing cannot be evaluated. However, in the present invention, by repeatedly cleaning with ozone water and hydrofluoric acid without completely removing the oxide film, it is possible to visualize and evaluate only defects caused by processing without making defects due to crystallization. In addition, cleaning can be performed without deteriorating the surface roughness of the wafer, and measurement with a very small particle diameter is possible.

In this way, by making only machining defects such as polishing visible, it becomes possible to evaluate only machining defects.

On the other hand, in the cleaning step (b) in the present invention, the reason why only processing defects such as polishing can be made visible without making the defects that are crystal groups visible is as follows. The processing defect is an altered layer caused by deformation of the wafer during processing such as polishing. Although the oxide film on the wafer is removed by hydrofluoric acid, the oxide film in the affected layer portion has an etching rate different from that of the surrounding oxide film, and it becomes visible by alternately repeating the treatment with ozone water and the treatment with hydrofluoric acid. This is because, by performing an etching treatment using hydrofluoric acid to leave an oxide film, a difference occurs in the thickness of the oxide film between the affected layer and the surrounding area (the oxide film in the affected layer portion is thick), and the difference becomes more remarkable by repeating the process of reforming the oxide film with ozone water (returning the oxide film thickness to uniformity). When the oxide film is completely removed, since the oxide film portion of the damaged layer is also removed, there is no oxide film even after repeated ozone water treatment and hydrofluoric acid treatment, so no difference in oxide film thickness and no visible appearance occurs, making it impossible to evaluate defects caused by processing.

In addition, by repeating ozonated water and hydrofluoric acid treatment without completely removing the oxide film as in the present invention, the amount of etching is reduced and the oxide film is always left so that crystal defects such as oxygen precipitates and defects such as pits due to metal contamination do not appear.

On the other hand, in the conventional SC1-RT method, not only processing defects but also crystal defects such as oxygen precipitates are made visible by performing etching in a large amount.

In addition, the conventional wafer quality evaluation method using ozone water and HF treatment includes a step of removing (exfoliating) all of the native oxide film, and it is possible to evaluate the surface roughness without deteriorating the surface roughness by completely removing the oxide film using ozone water and hydrofluoric acid. However, in this method, when the native oxide film is removed by HF, crystal defects are also present.

The ozone concentration of ozonated water in the present invention is not particularly limited, but is preferably 5 ppm to 30 ppm. In order to form a native oxide film, it is preferable to set it to 5 ppm or more, and from the viewpoint of a practical working concentration, it is preferable to set it to 30 ppm or less. In addition, the treatment time with ozone water per one time is preferably 10 seconds or more in order to form a native oxide film.

The hydrofluoric acid concentration is not particularly limited, but is preferably 0.1 to 1.0%. If it is 0.1% or more, since concentration control can be performed accurately, it is preferable. Further, in order to control the film thickness of the native oxide film, it is preferable to set it to 1.0% or less. In addition, the hydrofluoric acid treatment time per one time is preferably about 2 seconds to 20 seconds. If it is 2 seconds or more, the hydrofluoric acid supplied to the wafer is evenly spread, and if it is 20 seconds or less, the oxide film removal process can be performed without leaving the oxide film, which is preferable.

The number of repetitions of the oxidation treatment with ozone water and the oxide film removal treatment with hydrofluoric acid is preferably about 5 to 50 times. If the number of iterations is 5 or more, it is possible to reliably make machining defects visible. Moreover, if it is 50 times or less, since the cleaning process time can be suppressed and throughput goes up, it is preferable. Furthermore, if it is 50 times or less, since it can evaluate without deteriorating the surface roughness of a silicon wafer, it is preferable. In addition, it is sufficient because the process quality trend of the wafer can be grasped without repeating more than 50 times.

Subsequently, surface defects are measured for the silicon wafer after the cleaning step (b), and an increased defect measurement step (c) is performed to measure the increased defects with respect to the defects measured in the total surface defect measurement step (a).

In this incremental defect measuring step (c), the number of only increased defects is measured for the defects measured in the total surface defect measuring step (a). The measurement can measure, for example, the number of increased defects only by performing dynamic coordinate measurement using Surfscan SP5 manufactured by KLA-Tencor, similarly to the total surface defect measurement step.

Thereafter, the cleaning step (b) and the incremental defect measuring step (c) are performed again. This is performed a plurality of times, and the silicon wafer is evaluated based on the measurement result of the growth defects after each cleaning step, for example, the increasing tendency (slope) of the growth defects or the increase amount of the growth defects.

In this way, the cleaning step (b) and the increasing defect measuring step (c) are alternately performed a plurality of times, and the silicon wafer is evaluated based on the measurement result of the increasing defect (the slope of the increasing defect or the number of increasing defects). It is possible to evaluate only processing defects such as polishing, excluding defects caused by crystals and particles generated by cleaning.

When processing conditions such as polishing are good, defects caused by processing machines do not occur (since there are few), so even if the cleaning step (b) and the incremental defect measurement step (c) are repeated, the slope of the incremental defect increase is small and the number of incremental defects is small. On the other hand, if the polishing quality is poor, defects caused by the processing machine occur, so if cleaning and surface defect measurement are repeated, the slope of the increase in defects increases and the number of defects increases. By evaluating the quality of polishing based on this gradient or the number of incremental defects, it is possible to confirm the state of processing at that point in time.

That is, when the linear approximation of the increasing defect is taken, the larger the slope or the larger the increasing defect number, the more latent processing defects are included, and the processing quality deteriorates.

As described above, in the present invention, by repeatedly performing cleaning without completely removing the oxide film using ozone water and hydrofluoric acid, not only deterioration of the surface roughness of the wafer and adhesion of particles, etc. In addition, by looking at the increasing trend of defects measured after each cleaning step, only defects caused by processing devices such as polishing can be evaluated, excluding defects caused by crystals and particles generated by cleaning. In addition, it is possible to evaluate defects in a microscopic area, which has never been possible before.

In addition, the silicon wafer evaluation method described above can be applied to a method for producing a silicon wafer as a product by performing mirror polishing on a silicon wafer before mirror polishing. In this silicon wafer manufacturing method, prior to manufacturing a silicon wafer to be a product, an experiment according to the silicon wafer evaluation method is performed on an experimental silicon wafer, the mirror polishing conditions in the mirror polishing are specified in advance, and the mirror polishing is performed under the specified mirror polishing conditions to manufacture the silicon wafer to be the product. Specifically, a silicon wafer is manufactured as follows.

First, a silicon wafer for experiments before mirror polishing is prepared. Next, mirror polishing is performed on the experimental silicon wafer before mirror polishing under predetermined mirror polishing conditions. With respect to the experimental silicon wafer subjected to mirror polishing in this way, the entire surface defect measurement step, the cleaning step, and the incremental defect measurement step are performed in the same manner as in the silicon wafer evaluation method described above (see Figs. 1(a) to (c)). Specifically, each process is performed as follows. First, a total surface defect measurement step of measuring surface defects in advance is performed on an experimental silicon wafer subjected to mirror polishing. Next, the silicon wafer for experimentation is subjected to a cleaning process in which oxidation treatment with ozone water and oxide film removal treatment with hydrofluoric acid are alternately repeated under the condition that the oxide film formed on the surface of the silicon wafer for experimentation is not completely removed. Next, a surface defect measurement is performed on the experimental silicon wafer after the cleaning process, and an incremental defect measurement process is performed to measure the incremental defects with respect to the defects measured in the total surface defect measurement process.

The cleaning process and the increasing defect measurement process are alternately repeated a plurality of times, and the experimental silicon wafer is evaluated based on the measurement result of the increasing defect after each cleaning process. Additionally, based on the evaluation of the experimental silicon wafer, the mirror polishing conditions for the silicon wafer before mirror polishing are specified so that the polishing quality after mirror polishing becomes a desired polishing quality. Here, under specific mirror polishing conditions, a silicon wafer to be a product is manufactured by performing mirror polishing on a silicon wafer before mirror polishing.

In a mirror-polished silicon wafer polished under polishing conditions in which processing defects do not occur (less) after mirror-polishing, even if the cleaning step (b) and the incremental defect measurement step (c) are repeated, the slope of the increase in incremental defects is small, and the number of incremental defects is small. On the other hand, if the polishing quality is poor, defects caused by the processing machine occur, so if cleaning and surface defect measurement are repeated, the slope of the increase in defects increases and the number of defects increases. By evaluating the polishing quality of the experimental silicon wafer based on this inclination or the number of incremental defects, it is possible to specify under what mirror polishing conditions the desired polishing quality is obtained for the silicon wafer before mirror polishing.

More specifically, when a linear approximation of the increasing defect is taken, a mirror polishing condition such that there is no or a small slope can be selected. For example, in the flow shown in Fig. 1, mirror polishing conditions can be set such that the number of increased defects per 10 repetitions of hydrofluoric acid → ozone water is, on average, 10 or less, 5 or less, or 1 or less.

Hereinafter, the present invention will be described in more detail by showing examples and comparative examples, but the present invention is not limited to these examples.

(Example)

Total surface defects were measured using silicon wafers that were finally polished and cleaned under different polishing conditions (polishing conditions 1 to 4) (Fig. 1(a)). The wafers subjected to the total surface defect measurement were cleaned by alternately repeating oxidation treatment with ozone water and oxide film removal treatment with hydrofluoric acid (FIG. 1(b)).

As for the cleaning conditions, the ozone water concentration was 10 ppm, the ozonated water treatment time was 20 seconds, the hydrofluoric acid concentration was 0.3%, the hydrofluoric acid treatment time was 5 seconds, and hydrofluoric acid → ozone water was repeated 5 times in the flow shown in FIG. On the other hand, in all hydrofluoric acid treatments, the oxide film was removed leaving a thickness on the wafer surface.

Next, surface defects were measured for the silicon wafer after the cleaning process, and the increased defects were measured for the defects measured in the total surface defect measurement step (a) (FIG. 1(c)). On the other hand, the total surface defect measurement and the growth defect measurement were performed using Surfscan SP5 manufactured by KLA-Tencor at a particle diameter of 19 nm or more, and only the increased defect was measured by performing the same point coordinate measurement.

The washing step and the increasing defect measurement step were repeated until the total number of repetitions of treatment with ozonated water → treatment with hydrofluoric acid reached 50 (i.e., until the number of repetitions of the washing step and the incremental defect measurement step reached 10).

Table 1 summarizes the total number of repetitions and the number of increasing defects of treatment with ozone water → treatment with hydrofluoric acid, with the number of defects only increased as the number of defects for the results of measurement of total surface defects after each cleaning step. In addition, FIG. 2 shows a graph plotting the relationship between the total number of repetitions of treatment with ozone water → treatment with hydrofluoric acid and the number of increasing defects. Based on Table 1 and FIG. 2, the slope of the increase in defects or the amount of increase in defects was evaluated.

In addition, as a result of observing the wafer surface after cleaning with SEM, it was found that no crystal defects were present on the wafer surface, and only processing defects as shown in FIG.

As shown in FIG. 2, in the polishing conditions 1 to 4, the slope of the increase in defects is different for each polishing condition, and in the polishing condition 1, the slope of the increase is almost zero. Further, in the polishing conditions 2 to 4, it was found that the polishing quality deteriorated as the slope of the increase increased, that is, in the order of polishing condition 4, polishing condition 3, and polishing condition 2.

[Table 1]

(Comparative example)

A silicon wafer was evaluated by an evaluation method based on the SC1-RT method described in Japanese Unexamined Patent Publication No. 2000-208578. Specifically, the surface of the silicon wafer was subjected to an etching treatment using a treatment liquid composed of ammonia, hydrogen peroxide, and water to detect defects. However, what was detected in this process was mainly particles and crystal defects as shown in FIG. 3(B). In addition, even if Surfscan SP5 manufactured by KLA-Tencor was used, since the surface roughness deteriorated at a particle diameter of 19 nm or more, measurement was impossible.

On the other hand, this invention is not limited to the said embodiment. The above embodiment is an example, and any one having substantially the same configuration and exhibiting the same operation and effect as the technical idea described in the claims of the present invention is included in the technical scope of the present invention.

Claims (8)

As a method for evaluating silicon wafers,
With respect to the silicon wafer, a total surface defect measurement step of measuring surface defects in advance;
With respect to the silicon wafer, a cleaning step of alternately repeating an oxidation treatment with ozone water and an oxide film removal treatment with hydrofluoric acid under the condition that the oxide film formed on the surface of the silicon wafer is not completely removed;
An increased defect measurement step of measuring surface defects on the silicon wafer after the cleaning step and measuring increased defects with respect to the defects measured in the total surface defect measurement step,
The silicon wafer evaluation method characterized by repeating the cleaning step and the increasing defect measuring step alternately a plurality of times, and evaluating the silicon wafer based on the measurement result of the increasing defect after each cleaning step. According to claim 1,
A silicon wafer evaluation method characterized in that the oxide film removal treatment by hydrofluoric acid is performed under the condition that the oxide film is not completely removed, with a hydrofluoric acid concentration of 0.1 to 1.0% and a treatment time of 2 seconds to 20 seconds. According to claim 1,
The silicon wafer evaluation method according to claim 1 , wherein the cleaning process is repeated five times or more by alternating the oxidation treatment with the ozone water and the oxide film removal treatment with the hydrofluoric acid. According to claim 2,
The silicon wafer evaluation method according to claim 1 , wherein the cleaning step is repeated five times or more by alternating the oxidation treatment with the ozone water and the oxide film removal treatment with the hydrofluoric acid. According to any one of claims 1 to 4,
A silicon wafer evaluation method characterized in that a silicon wafer after mirror polishing is used as the silicon wafer. According to any one of claims 1 to 4,
A silicon wafer evaluation method characterized in that defects that are processing machines of the silicon wafer are evaluated based on the measurement results of the increased defects after each of the cleaning steps. According to claim 5,
A silicon wafer evaluation method characterized in that defects that are processing machines of the silicon wafer are evaluated based on the measurement results of the increased defects after each of the cleaning steps. A method for manufacturing a silicon wafer to be a product by performing mirror polishing on a silicon wafer before mirror polishing, comprising:
A step of preparing a silicon wafer for experiments before mirror polishing;
a step of performing mirror polishing on the experimental silicon wafer before the mirror polishing under predetermined mirror polishing conditions;
A total surface defect measurement step of measuring surface defects in advance on the experimental silicon wafer;
A cleaning step of alternately repeating an oxidation treatment with ozone water and an oxide film removal treatment with hydrofluoric acid under the condition that the oxide film formed on the surface of the experimental silicon wafer is not completely removed, with respect to the experimental silicon wafer;
An increased defect measurement step of measuring surface defects on the experimental silicon wafer after the cleaning step and measuring increased defects with respect to the defects measured in the total surface defect measurement step,
The cleaning process and the increasing defect measurement process are alternately repeated a plurality of times, and the experimental silicon wafer is evaluated based on the measurement result of the increasing defect after each cleaning process;
Based on the evaluation of the experimental silicon wafer, specify mirror polishing conditions in the mirror polishing such that the polishing quality after mirror polishing of the silicon wafer before mirror polishing becomes a desired polishing quality,
A method for producing a silicon wafer characterized by manufacturing a silicon wafer to be the product by performing mirror polishing on the silicon wafer before the mirror polishing under the specific mirror polishing conditions.

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