KR102556555B1 - 다중 터널 접합을 구비한 vcsel 레이저 및 그 제조 방법 - Google Patents

다중 터널 접합을 구비한 vcsel 레이저 및 그 제조 방법 Download PDF

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Publication number
KR102556555B1
KR102556555B1 KR1020210150117A KR20210150117A KR102556555B1 KR 102556555 B1 KR102556555 B1 KR 102556555B1 KR 1020210150117 A KR1020210150117 A KR 1020210150117A KR 20210150117 A KR20210150117 A KR 20210150117A KR 102556555 B1 KR102556555 B1 KR 102556555B1
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South Korea
Prior art keywords
vcsel laser
oxidation
reflector
vcsel
tunnel junction
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KR1020210150117A
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English (en)
Korean (ko)
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KR20220089619A (ko
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리 왕
니엔이 리
밍하오 궈
샨샨 린
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저지앙 레이시스크 테크놀로지 컴퍼니 리미티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
KR1020210150117A 2020-11-18 2021-11-03 다중 터널 접합을 구비한 vcsel 레이저 및 그 제조 방법 KR102556555B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN202011292202 2020-11-18
CN202011519982.7A CN114520461B (zh) 2020-11-18 2020-12-21 具有多隧道结的vcsel激光器及其制备方法
CN202011519982.7 2020-12-21

Publications (2)

Publication Number Publication Date
KR20220089619A KR20220089619A (ko) 2022-06-28
KR102556555B1 true KR102556555B1 (ko) 2023-07-17

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KR1020210150117A KR102556555B1 (ko) 2020-11-18 2021-11-03 다중 터널 접합을 구비한 vcsel 레이저 및 그 제조 방법

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JP (1) JP7391069B2 (zh)
KR (1) KR102556555B1 (zh)
CN (1) CN114520461B (zh)
TW (1) TWI770913B (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115986562B (zh) * 2023-03-20 2023-07-25 苏州长光华芯半导体激光创新研究院有限公司 高功率低发散角垂直腔面发射半导体发光器件及制备方法
CN117424070B (zh) * 2023-12-18 2024-03-01 苏州长光华芯光电技术股份有限公司 一种多结垂直腔面发光结构及其制备方法

Citations (2)

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JP2005044964A (ja) * 2003-07-28 2005-02-17 Ricoh Co Ltd 面発光レーザ素子および面発光レーザアレイおよび面発光レーザモジュールおよび電子写真システムおよび光インターコネクションシステムおよび光通信システムおよび面発光レーザ素子の製造方法
US20170256915A1 (en) * 2016-03-04 2017-09-07 Princeton Optronics, Inc. High-Speed VCSEL Device

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KR100584542B1 (ko) * 2000-02-24 2006-05-30 삼성전자주식회사 표면광 레이저
AU2001271279A1 (en) * 2000-05-31 2001-12-11 Sandia Corporation Long wavelength vertical cavity surface emitting laser
JP4537658B2 (ja) 2002-02-22 2010-09-01 株式会社リコー 面発光レーザ素子、該面発光レーザ素子を用いた面発光レーザアレイ、電子写真システム、面発光レーザモジュール、光通信システム、光インターコネクションシステム、および面発光レーザ素子の製造方法
CN1588717A (zh) * 2004-07-16 2005-03-02 北京工业大学 高效大功率多波长隧道级联多有源区垂直腔面发射激光器
WO2013016676A2 (en) * 2011-07-27 2013-01-31 MYTEK, LLC (doing business as VIXAR) Method and apparatus including improved vertical-cavity surface-emitting lasers
US8731012B2 (en) 2012-01-24 2014-05-20 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser and its manufacturing method, surface emitting semiconductor laser device, optical transmitter, and information processor
CN104577711A (zh) * 2013-10-24 2015-04-29 中国科学院苏州纳米技术与纳米仿生研究所 垂直腔面发射激光器及其制作方法
WO2020033706A1 (en) * 2018-08-09 2020-02-13 Array Photonics, Inc. Hydrogen diffusion barrier for hybrid semiconductor growth
US11563307B2 (en) * 2018-10-01 2023-01-24 Mellanox Technologies, Ltd. High speed high bandwidth vertical-cavity surface-emitting laser
WO2020150060A1 (en) * 2019-01-17 2020-07-23 Array Photonics, Inc. Control of vcsel spatial modes and output beam
CN111478179A (zh) * 2020-05-25 2020-07-31 长春中科长光时空光电技术有限公司 一种垂直腔面发射激光器及其制作方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005044964A (ja) * 2003-07-28 2005-02-17 Ricoh Co Ltd 面発光レーザ素子および面発光レーザアレイおよび面発光レーザモジュールおよび電子写真システムおよび光インターコネクションシステムおよび光通信システムおよび面発光レーザ素子の製造方法
US20170256915A1 (en) * 2016-03-04 2017-09-07 Princeton Optronics, Inc. High-Speed VCSEL Device

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Publication number Publication date
KR20220089619A (ko) 2022-06-28
JP7391069B2 (ja) 2023-12-04
TW202221994A (zh) 2022-06-01
CN114520461A (zh) 2022-05-20
CN114520461B (zh) 2023-03-28
TWI770913B (zh) 2022-07-11
JP2022098436A (ja) 2022-07-01

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