KR102550449B1 - Semiconductor manufacturing device having embedded fluid conduits and method of forming the conduit - Google Patents

Abstract

Various embodiments are provided herein with approaches for forming a conduit that is embedded within a component of a semiconductor manufacturing device (eg, an ion implanter) using an additive manufacturing process (eg, 3-D printing); The conduit is configured to convey fluid throughout the component to provide heating, cooling, and gas distribution thereof. In one approach, the conduit includes a set of raised surface features formed on the inner surface of the conduit to change fluid flow characteristics within the conduit. In another approach, the conduit may be formed in a helical configuration. In another approach, the conduit is formed to have a polygonal cross section. In another approach, the components of the ion implanter include at least one of an ion source, a plasma flood gun, a cold plate, a platen, and an arc chamber base.

Description

Semiconductor manufacturing device having embedded fluid conduits and method of forming the conduit

[0002] This disclosure relates generally to the field of semiconductor device fabrication, and more particularly to semiconductor fabrication devices having complex embedded fluid channels formed therein.

In semiconductor manufacturing, ion implantation is a common technique for altering the properties of semiconductor wafers during the production of various semiconductor-based products. Ion implantation is used to modify crystalline surfaces (eg, pre-amorphization), to introduce conductivity-altering impurities (eg, dopant implants), and to remove buried layers (eg, dopant implants). eg, halo implants), to create gettering sites for contaminants, and diffusion barriers (eg, fluorine and carbon co-implantation). implant))). Ion implantation can also be used in non-transistor applications, such as for alloy metal contact areas in flat panel display fabrication, and in other surface treatments. All of these ion implantation applications can be categorized as forming an area of material property change as a whole.

In many doping processes, the desired impurity material is ionized, the resulting ions are accelerated to form an ion beam of predefined energy, and the ion beam is directed to the surface of a target substrate, such as a semiconductor-based wafer. is sent to Active ions of the ion beam penetrate into the bulk semiconductor material of the wafer and are embedded in the crystalline lattice of the semiconductor material to form regions of desired conductivity.

An ion implanter usually includes an ion source to generate ions. Ion sources generate a significant amount of heat during operation. Heat is a product of ionization of the working gas, resulting in a hot plasma in the ion source. To ionize the working gas, the magnetic circuit is configured to produce a magnetic field in the ionization region of the ion source. The magnetic field interacts with the strong magnetic field in the ionized region where the working gas is present. An electric field is established between a cathode and a positively charged anode, where the cathode emits electrons. A magnetic circuit is established using magnets and pole pieces made of magnetically permeable material. The sides and base of the ion source are other components of the magnetic circuit. In operation, ions of the plasma are created in the ionization region and then accelerated away from the ionization region by the induced electric field.

In particular, a magnet is a thermally sensitive component, especially in the operating temperature ranges of many ion sources. For example, in many end-Hall ion sources that are cooled only by the radiation of heat, the discharge power can be limited to approximately 1000 Watts, and the ion current is particularly susceptible to thermal damage to the magnet. may be limited to approximately 1.0 Amps to prevent To manage higher discharge powers and thus higher ion currents, direct anode cooling systems have been developed to reduce the amount of heat reaching the magnet and other components of the ion source.

One such anode cooling system includes coolant lines flowing into a hollow anode and pumping coolant through the hollow anode. Specifically, material from the ion source is removed (eg, using a subtractive fabrication process) to form two axial conduits along the length of a sidewall of the ion source, can be spaced 180 degrees apart. Unfortunately, this axial conduit configuration limits the ability to provide uniform cooling throughout the ion source.

An exemplary method according to the present invention may include forming a conduit that is embedded within a component of a semiconductor manufacturing device using an additive manufacturing process, the conduit being raised on an interior surface of the conduit. ) contains a set of features.

An exemplary method according to the present invention may include forming a conduit embedded within a component of an ion implanter using an additive manufacturing process, the conduit comprising a set of raised surface features formed on an interior surface of the conduit. include The set of raised surface features may extend into an interior region of the conduit.

An exemplary semiconductor manufacturing device in accordance with the present invention may include a conduit embedded within a component of the semiconductor manufacturing device, wherein the conduit is formed with a plurality of undulations. The ion implanter may further include a set of raised surface features formed on an inner surface of the conduit, the set of raised surface features extending into an inner region of the conduit.

1A is an isometric semi-transparent diagram illustrating components of a semiconductor manufacturing device in accordance with the present invention.
FIG. 1B is a side view illustrating components of the ion implanter shown in FIG. 1A.
FIG. 2A is a cross-sectional view illustrating a conduit within a component of the ion implanter shown in FIG. 1A.
FIG. 2B is a side view illustrating conduits within the components of the ion implanter shown in FIG. 1A.
Figures 3A-3D are isometric views illustrating various raised surface features formed along the surface of a conduit within a component of the ion implanter shown in Figure 1A.
4A is an isometric view illustrating other components of a semiconductor manufacturing device in accordance with the present invention.
FIG. 4B is an isometric semi-transparency diagram illustrating components of the ion implanter shown in FIG. 4A.
5A is an isometric view illustrating other components of a semiconductor manufacturing device in accordance with the present invention.
FIG. 5B is an isometric semi-transparency diagram illustrating components of the ion implanter shown in FIG. 5A.
5C is a side view illustrating components of the ion implanter shown in FIG. 5B.
6A is an isometric view illustrating other components of a semiconductor manufacturing device in accordance with the present invention.
6B is an isometric semi-transparency diagram illustrating components of the ion implanter shown in FIG. 6A.
7A is an equiaxial semi-transparency diagram illustrating another component of a semiconductor manufacturing device in accordance with the present invention.
FIG. 7B is a side view illustrating components of the ion implanter shown in FIG. 7A.
8A is an isometric view illustrating other components of a semiconductor manufacturing device in accordance with the present invention.
8B is an isometric semi-transparency diagram illustrating components of the ion implanter shown in FIG. 8A.
9 is a flow chart illustrating a representative method according to the present disclosure.
The drawings are not necessarily to scale. The drawings are representations only and are not intended to represent specific parameters of the present disclosure. The drawings are intended to depict representative embodiments of the present disclosure and are therefore not to be considered limiting in scope. In the drawings, like numbering indicates like elements.

DEVICES AND METHODS ACCORDING TO THE PRESENT DISCLOSURE WILL BE MORE COMPLETELY DESCRIBED WITH REFERENCE NUMBERS IN THE DRAWINGS INVOLVING EMBODIMENTS OF THE DEVICE AND METHOD. Devices and methods may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. These embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the system and method to those skilled in the art.

For convenience and clarity purposes, terms such as “top,” “bottom,” “upper,” “lower,” “vertical,” “horizontal )," "lateral," and "longitudinal" describe the orientation and relative arrangement of these components and their component parts with respect to the orientation and geometry of the components of the semiconductor manufacturing device appearing in the figures. will be used in this application for The term shall include the specifically mentioned words, their derivatives, and words of like import.

As used in this application, an element or operation proceeding with the word “a” or “an” and listed in the singular is to be understood as not excluding plural elements or operations, except where the exclusion is not expressly stated. Moreover, references to “one embodiment” of the present invention are not intended to be construed as excluding the existence of additional embodiments that also incorporate the recited features.

In the foregoing figures, various embodiments presented in the present application are conduits that are embedded within a component (eg, ion implanter) of a semiconductor manufacturing device using an additive manufacturing process (eg, 3-D printing). wherein the conduit is configured to convey fluid throughout the component to provide heating, cooling, or gas distribution thereof. In one approach, the conduit includes a set of raised surface features formed on the inner surface of the conduit to change fluid flow characteristics within the conduit.

The ion implanter disclosed herein may include one or more components formed using an additive manufacturing process such as 3-D printing. In particular, the present invention provides a digital representation of a 3-D component (e.g., an additive manufacturing file format (AMF) and a stereolithography (STL) file format) using one or more additive manufacturing techniques. A system and process for printing 3-D features in a layer-by-layer manner from Examples of additive manufacturing techniques include extrusion-based techniques, jetting, selective laser sintering, powder/binder jetting, electron-beam melting, and stereolithography processes. For these techniques, a digital representation of a 3-D part is initially sliced into multiple horizontal layers. For a given sliced layer, a tool path is then created providing commands for the specific additive manufacturing system to print the given layer.

In one example, the components of the present invention are extrusion-based additive manufacturing in which the 3-D component can be printed from a digital representation of the 3-D component in a layer-by-layer fashion by extruding a flowable part material. It can be formed using the system. Part material is extruded through an extrusion tip carried by the system's print head and deposited as a set of roads on a platen in planar layers. The extruded component material fuses with the previously deposited component material and solidifies upon a drop in temperature. The position of the printer head relative to the substrate is then incremented, and the process is repeated to form a 3-D part resembling a digital representation.

In another example, the components of the present invention may be formed through fused deposition modeling (FDM), a technique that places material into layers. A plastic filament or metal wire may be unwound from the coil and placed to create a component. FDM further involves computer processing the STL file for components. During operation, FDM uses a nozzle to extrude beads of material. The nozzle may be heated to melt the material or otherwise make the material more pliable. An extrusion head may be coupled to the nozzle for depositing the beads. The nozzle may be movable in horizontal and vertical directions. The nozzle may be controlled by a robotic mechanism, eg a robotic mechanism, with a rectilinear design or a delta robot. The extrusion head may be moved by stepper motors, servo motors, or other types of motors. The nozzle and extrusion head may be computer controllable, where the computer may issue control instructions to, for example, robotic mechanisms and motors.

In another example, the components of the present invention are formed using a selective laser sintering (SLS) process. SLS may involve the use of a laser, such as a carbon dioxide laser, to fuse particles of material into a desired three-dimensional shape. Example materials may include plastics, metals, and ceramics. SLS can be applied using several materials, for example using layers of different materials or by mixing different materials together. Materials include polymers such as nylon (neat, glass-filled, or with other fillers) or polystyrene, metals including steel, titanium, alloy mixtures, and composites and green It may contain green sand. The ingredients may be in the form of a powder.

SLS may include using a laser to selectively fuse material by scanning cross sections created from a 3-D digital description of a component (eg, from a CAD file) on the surface of a powder bed. . After the cross section is scanned, the powder bed is lowered based on a predetermined layer thickness, a new layer of material can be applied on top, and the process repeated. This may continue until the component is completely manufactured.

When manufacturing 3-D parts by depositing layers of part material, support layers or structures can be built under overhanging portions or in cavities of the 3-D parts being built; It may not be supported by the material itself. The support structure can be dried using the same deposition techniques for depositing the component material. The host computer creates additional geometry that spans over the 3-D part being formed or acts as a support structure for free-space segments. A support material is then deposited according to the geometry created during the printing process. The support material is attached to the part material during manufacturing and is removable from the finished 3-D part when the printing process is complete.

Referring now to FIGS. 1A-1B, one representative embodiment illustrating a portion of a semiconductor manufacturing device (eg, ion implanter 10) in accordance with the present invention is shown. The ion implanter 10 includes a conduit 14 embedded within a component 18 (eg, an ion source) of the ion implanter 10, the conduit 14 for heating, cooling, or gas distribution thereof. It is described herein as being used for liquid and/or gas distribution throughout component 18 to provide

As shown, conduit 14 is located between inner surface 22 and outer surface 26 of sidewall 30 of component 18 and represents embedded cooling channels, for example for an ion source. . A conduit 14 may extend along the sidewall 30 and takes a gas or liquid from an inlet 40 located within the base section 42 and delivers the gas or liquid to a distal end 44 of the component 18. do. Conduit 14 may then withdraw gas or liquid to an outlet 48 located at the proximal end 52 of component 18 . As shown, conduit 14 may be formed in a helical configuration and may extend 360° around component 18 . Forming the conduit 14 in a helix allows the fluid to be distributed more evenly through the component 18 reducing the occurrence of divergent temperature variations. In other embodiments, conduit 14 may be formed into a plurality of undulations, curves, etc., or virtually any other conceivable configuration. In various embodiments, a gas or liquid may be used as the coolant, where examples include xenon (Xe), argon (Ar), oil, or water.

As previously mentioned, component 18 is an additive material that makes it possible to embed conduit geometries into solid components without being feasible using traditional subtractive manufacturing techniques, such as drilling. It can be formed using an additive manufacturing process (eg, 3-D printing). 3-D printing allows for circular channels, not just simple straight lines. 3-D printing additionally allows complex paths and profiles in any material and allows ideal geometries to be fabricated.

In the embodiment shown in Figures 1a-b, a complex profiled helical configuration of conduit 14 may be inlayed into component 18 during formation of the component using an additive manufacturing process. Conduit 14 may have a unique cross-sectional profile suitable for specific applications including, but not limited to, heating, cooling, and gas distribution.

One such non-limiting application is an inlaid water-cooling channel with a pentagonal cross-section as shown in Figures 1b and 2a-b. In this embodiment, the pentagonal cross section of conduit 14 is defined by a bottom surface 56 , a set of sidewalls 60 , 64 , and an overall triangular-shaped top portion 68 . Conduit 14 further defines an interior zone 72 through which fluid flows. The pentagonal cross sectioned conduit of conduit 14 is the flat, thin cross section geometry of the sidewalls 60, 64 of the conduit 14 is the plasma in the component 18 and the fluid flowing through the conduit 14. It maximizes performance compared to, for example, circular cross-section conduits because it provides greater heat transfer between the conduits. Conduit 14 in this embodiment is shown as a pentagon for illustrative purposes. In particular, virtually any conceivable cross section is possible for conduit 14 . This includes, but is not limited to, any regular or irregular polygon, such as a triangle, star, crescent moon, trapezoid, crown, rectangle, hexagon, etc.

In another non-limiting embodiment, as further shown in Figures 1b-2a, component 18 may include a plurality of conduits. In other words, in addition to conduit 14, component 18 may further include a circular cross-section channel 76 formed within sidewall 30 for delivering gas to the ion source. As shown, channel 76 extends along and follows a portion of conduit 14 . In representative embodiments, channel 76 is similarly formed using one or more additive manufacturing processes.

Referring now to FIG. 2B , a set of surface features formed along conduit 14 using an additive manufacturing process is shown. In representative embodiments, surface features, such as raised surface features 80A-N, may be selected to control the flow characteristics of the fluid through conduit 14, such that the cooled or heated fluid of thermal performance. As shown, conduit 14 includes a set of relief surface features 80A-N formed on an interior surface of conduit 14 (e.g., sidewalls 60, 64), including relief surface features 80A-N. The set of N extends into the inner region 72 of the conduit 14 and affects the flow characteristics of the fluid flowing inside the conduit. Embossed surface features 80A-N may be formed along sidewalls 60 and 64 and/or along bottom surface 56 in other embodiments, as shown.

In representative embodiments, raised surface features 80A-N may be formed during manufacture of component 18 using, for example, an additive manufacturing process. As such, relief surface features 80A-N can be any number of surface feature geometry and complexity to create the desired fluid flow (eg, turbulent flow or smooth, laminar flow). ), where such surface feature geometries and complex structures may not feasibly be made using subtractive fabrication techniques. In another embodiment, plating may be applied to one or more surfaces of conduit 14 after fabrication to change surface roughness and thus alter flow.

In one non-limiting embodiment, as shown in FIGS. 2B and 3A, the relief surface features 80A-N correspond to a plurality of uniformly patterned ridges formed on the inner sidewall 60 and conduit. oriented generally parallel to the flow of fluid through (14). In this embodiment, a plurality of ridges extend into the inner region 72 of the conduit 14 and have a generally rectangular cross-section. Ridges can be parallel or perpendicular to the flow direction and can be used to guide the flow, change the flow/direction, and change the effective surface roughness. Changing the surface roughness can form eddies and create more turbulence.

In another non-limiting embodiment, as shown in Figures 3B, the relief surface features 80A-N correspond to a plurality of uniformly patterned ridges formed on the interior surface 60 and are sloped ( angled) or V-shaped patterns. In this embodiment, a plurality of ridges extend into the inner region 72 (FIG. 2B) of conduit 14 and have a generally rectangular cross-section.

In other non-limiting embodiments, as shown in FIGS. 3C-D, the set of raised surface features 80A-N may be formed on the inner surface of the conduit 14, eg, the sidewall 60. Corresponds to protrusions. The protrusions may have a semi-circular profile (eg, shown in FIG. 3C) or a hexagonal profile (eg, shown in FIG. 3D). In these embodiments, a plurality of protrusions extend into the inner region 72 ( FIG. 2B ) of the conduit 14 and are provided to create turbulence in the fluid within the conduit 14 . Protrusions can be used to direct flow, change flow/direction, and change the effective surface roughness. Changing the surface roughness can form vortices and create more turbulence. Additionally, a given protrusion may be an activating site for a chemical reaction, or a sensing site for sensing one or more states of a fluid.

Referring now to FIGS. 4a-4b, one representative embodiment illustrating a portion of an ion implanter 100 according to another aspect of the present invention is shown. The ion implanter 100 includes a conduit 114 embedded within a component 118, which in this non-limiting embodiment corresponds to a plasma flood gun (PFG).

PFG can be used in the ion implanter 100 to provide negative electrons to neutralize the positive ions in the beam. Specifically, the PFG may be placed near the platen in close proximity to the incoming ion beam just prior to impingement of the ion beam on the wafer or target substrate. The PFG includes a plasma chamber 120, where plasma is created through ionization of atoms of a noble gas such as argon (Ar), xenon (Xe) or krypton (Kr). Low energy electrons from the plasma are introduced into the ion beam and attracted toward the target wafer to neutralize the excessively positively charged wafer.

As shown in FIG. 4B , embedded conduit 114 passes through component 118 to provide heat control and gas distribution. In representative embodiments, embedded conduit 114 provides more uniform thermal performance throughout component 118, more ideal gas distribution, a smaller envelope (i.e., less volumetric requirements, less geometrical structure, less occupied volume/space), and a reduced number of parts to reduce cost and ease of manufacture. Embedded conduit 114 can also reduce potential contamination resulting from having multiple parts assembled together. Similar to the embodiments described above, component 118 and conduit are formed using additive manufacturing processes. In various embodiments, conduit 114 may include any number of cross-sectional profiles and/or raised surface features, including any of those shown in FIGS. 3A-3D and described above.

Referring now to Figures 5a-c, one representative embodiment illustrating a portion of an ion implanter 200 in accordance with another aspect of the present invention is shown. Ion implanter 200 includes a plurality of conduits 214 embedded within a component 218, which in this non-limiting embodiment is a cooling plate for use with a magnet. do.

As discussed above, a magnet may be used within the ion implanter 200 to produce a magnetic field in the ionization region of the ion source. Since the magnet is a thermally sensitive component, especially in the operating temperature ranges of known ion sources, a cooling plate may be attached to the magnet to reduce the temperature affecting the magnet.

As shown in Figures 5b-c, the cooling plate (ie, component 218) includes a plurality of intricate conduits 214 embedded therein to provide increased cooling to the magnet. As shown, one or more conduits 214 surround an inner opening 226 of the cooling plate and extend to an outer perimeter 230 . In this embodiment, multiple parallel paths provide the desired cooling, while also limiting the net temperature increase and pressure drop of the coolant. Because the cold plate can be formed in one piece using additive manufacturing processes, sub-optimal thermal performance caused by the interface between the components of the cold plate is eliminated. Moreover, the profile of conduit 214 is not constrained by cooling tubes manufacture and lay and techniques that limit many viable conduit configurations.

Referring now to FIGS. 6A-B, one representative embodiment illustrating a portion of an ion implanter 300 in accordance with another aspect of the present invention is shown. The ion implanter 300 includes a plurality of conduits 314 embedded within a component 318, which in this non-limiting embodiment corresponds to an arc chamber base.

The arc chamber base has a set of electrically conductive (e.g., tungsten) chamber walls 334 and an indirectly heated material defining an ionization zone in which a dopant feed gas is added to create energy related ions. May come into contact with the indirectly heated cathode (IHC) arc chamber. Different feed gases are supplied to the ion source chamber through a plurality of conduits 314 to obtain a plasma with specific dopant characteristics that is used to form the ion beams. For example, the introduction of H ₂ , BF ₃ , GeF ₄ , PH ₃ and AsH ₃ as dopant gases at a relatively high chamber temperature is divided into mono-atoms with low, medium and high implantation energies. . These ions are formed into a beam, and the beam then passes through a source filter (not shown).

As shown in FIG. 6B, conduits 314 may be embedded within the arc chamber base (ie, component 318) to provide thermal control and gas distribution therein. Conduits 314 provide more uniform thermal performance due to more ideal gas distribution, especially for materials that are difficult to machine using subtractive manufacturing techniques. Conduits 314 also provide a smaller envelope and involve fewer overall parts, reducing cost and making them easier to manufacture. Similar to the embodiments described above, component 318 including conduit 314 may be formed using additive manufacturing processes. In some embodiments, conduit 314 can include any number of cross-sectional profiles and/or raised surface features, including any of those shown in FIGS. 3A-3D and described above.

Referring now to Figures 7a-b, one representative embodiment illustrating a portion of an ion implanter 400 in accordance with another aspect of the present invention is shown. Ion implanter 400 includes a plurality of conduits 414 embedded within a component 418, which in this non-limiting embodiment corresponds to a platen used to hold a wafer. do.

As shown, conduit 414 can be formed on interior surface 438 of component 418 and represents, for example, an embedded cooling channel. Conduit 414 can take gas or liquid from inlet 440 and conveys the liquid or gas through component 418 to outlet 448 . As shown, in this non-limiting embodiment, conduit 414 may be formed generally from a coil. Forming conduit 414 in this configuration allows the fluid to be more evenly distributed throughout component 418 providing enhanced thermal management.

Similar to the embodiments described above, component 418 may be formed using additive manufacturing processes. In the embodiment shown in FIGS. 7a-b, the complex coil configuration of conduit 414 may be formed simultaneously with component 418, for example as one piece. In some embodiments, conduit 414 can include any number of cross-sectional profiles and/or raised surface features, including any of those shown in FIGS. 3A-3D and described above.

Referring now to FIGS. 8A-8B , one representative embodiment illustrating a portion of an ion implanter 500 according to another aspect of the present invention is shown. The ion implanter 500 includes a plurality of conduits 514A-D embedded within a component 518, which in this non-limiting example corresponds to an arm or connecting element.

As shown, complex profiled conduits 514A-D can be embedded as parts or pieces of a mechanism to allow for its thermal management, gas distribution, or cable management within moving components, while adding additional plumbing. Avoid the demands of operation. In this example, conduit 514A can represent a cable conduit extending from proximal end 546 to distal end 552 of component 518 . Conduit 514B may represent a gas or thermal management conduit that also extends from the proximal end 546 to the distal end 552 of component 518 . Conduits 514C-514D, on the other hand, may represent gas or thermal management conduits that extend partially along component 518 from distal end 552 to individual outlets through sidewall 558 . Similar to the embodiments described above, component 518 comprising conduits 514 A-D may be formed using an additive manufacturing process. In some embodiments, conduits 514A-D may include any number of cross-sectional profiles and/or raised surface features, including any of those shown in FIGS. 3A-3D and described above.

Referring now to FIG. 9, a flow diagram illustrating a representative method 600 for forming a conduit embedded within a component of a semiconductor manufacturing device in accordance with the present invention is shown. The method 600 will be described with representations shown in Figures 1a-8b.

Method 600 includes forming a conduit embedded within a component of a semiconductor manufacturing device (eg, an ion implanter) using an additive manufacturing process as shown at block 601 . In some embodiments, the conduit can be used in molten deposition modeling, extrusion-based processes, jetting, selective laser sintering, powder/binder jetting, e-beam melting, and stereolithography processes. It can be embedded in a component by one of them. In some embodiments, the conduit may be formed in a plurality of undulations, for example in a helical configuration. In some embodiments, the conduit may be formed to have a polygonal cross section. In some embodiments, the conduit may be formed to have a pentagonal cross section. In some embodiments, a plurality of conduits may be formed within the component, and at least one of the plurality of conduits may have a circular cross section. Method 600 further includes forming a set of relief surface features on the interior surface of the conduit using an additive manufacturing process as shown at block 603 . In some embodiments, the set of raised surface features may extend into an interior region of the conduit. In some embodiments, the set of relief features may include at least one of a plurality of protrusions and/or a plurality of ridges.

In view of the above, at least the following advantages are achieved by the embodiments disclosed in this application. First, the conduits disclosed in this application are formed in a solid object using an additive manufacturing process. As such, conduits can be formed with complex shapes, profiles, and cross-sections that cannot be achieved using conventional subtractive fabrication techniques (eg, drilling). As a result, components can be designed that approximate ideal geometries, providing improved thermal performance of fluid systems. Second, the additive fabrication of the conduits disclosed in this application allows greater control over their surface finish and features, thus influencing the flow characteristics of the fluid flowing therein. According to the disclosed embodiments, the inner surface features of the conduits may be formed during manufacture of the component. These surface features can be varied to achieve desired flow characteristics (eg, turbulence) and are not feasible using subtractive fabrication techniques.

Although certain embodiments of the present disclosure have been described herein, the present disclosure is not limited thereto, and thus the present disclosure is subject to wide scope as the art permits and the detailed description is similarly understood. Accordingly, the above detailed description is only illustrative of specific embodiments and should not be construed as limiting. Those skilled in the art will envision other modifications within the scope and spirit of the claims appended hereto.

Claims (15)

in the method,
forming a conduit between an inner surface and an outer surface of a sidewall of a tubular component of an ion source using an additive manufacturing process, the additive manufacturing process comprising a series of layered simultaneously forming the conduit and the component by depositing a horizontal layer of material in a desired configuration of the component, the conduit comprising a set of raised features formed on an inner surface of the conduit. and the conduit has a pentagonal cross-section defined by a bottom surface, a set of side walls, and a triangular-shaped top portion;
connecting an inlet and an outlet located within a base section of the tubular component with the conduit, wherein the inlet, the outlet and the conduit are configured to convey a cooling fluid through the tubular component. operable, how. The method of claim 1 , wherein the set of relief features extends into an interior region of the conduit. The method of claim 1 , wherein the set of relief features includes at least one of a plurality of protrusions, and a plurality of ridges. The method of claim 1 further comprising forming the conduit in a helical configuration around the full circumference of the side wall of the tubular component. The method of claim 1 in one of the extrusion-based techniques, jetting, selective laser sintering, powder/binder jetting, e-beam melting, and a stereolithographic process. forming the conduit to be embedded within the tubular component by in the method,
forming a conduit between an inner surface and an outer surface of a sidewall of a tubular component of an ion implanter using an additive manufacturing process, wherein the additive manufacturing process comprises: and simultaneously forming the conduit and the component by depositing a series of horizontal layers of material in a desired configuration of the component, the conduit having a set of raised features formed on an inner surface of the conduit. wherein the set of raised surface features extends into an inner region of the conduit, the conduit being formed in a helical configuration around the entire circumference of the side wall of the tubular component, the conduit comprising a bottom surface, a side wall A method having a pentagonal cross-section defined by a set of , and a triangular-shaped top portion. 7. The method of claim 6, wherein the set of relief features includes at least one of a plurality of protrusions, and a plurality of ridges. 7. The method of claim 6, wherein the tubular component comprises an ion source. 7. The method of claim 6 in one of the extrusion-based techniques, jetting, selective laser sintering, powder/binder jetting, e-beam melting, and a stereolithographic process. forming the conduit to be embedded within the tubular component by delete delete delete delete delete delete

Images