KR102539518B1 - Light emitting device and lighting apparatus - Google Patents

Abstract

Embodiments relate to a light emitting device, a method for manufacturing a light emitting device, a light emitting device package, and a lighting device. A light emitting device according to an embodiment may include a common electrode 210 providing first conductivity type power and a plurality of light emitting structures disposed on the common electrode 210 . The plurality of light emitting structures may include a first light emitting structure 110A and a second light emitting structure 110B disposed adjacent to each other in a first axis direction of the first light emitting structure 110A. The first and second light emitting structures 110A and 110B each include first conductivity type semiconductor layers 112a and 112b, active layers 114a and 114b, and second conductivity type semiconductor layers 116a and 116b, The common electrode 210 electrically passes through the first conductive semiconductor layers 112a and 112b of the first and second light emitting structures 110A and 110B and the first and second via electrodes 216a and 216b, respectively. can be connected
The second conductivity type semiconductor layer 116a of the first light emitting structure 110A includes a first pad 240A disposed adjacently in an opposite direction to the first axis of the first light emitting structure 110A and the common electrode ( 210 may be electrically connected through the first connection electrode 220A penetrating the first insulating layer 310 disposed on the surface. The second conductivity-type semiconductor layer 116b of the second light emitting structure 110B includes a second pad 240B disposed adjacently in an opposite direction to the first axis of the first light emitting structure 110A and the first insulation. They may be electrically connected through the second connection electrode 220B penetrating the layer 310 .

Description

Light emitting device and lighting device {LIGHT EMITTING DEVICE AND LIGHTING APPARATUS}

Embodiments relate to a light emitting device, a method for manufacturing a light emitting device, a light emitting device package, and a lighting device.

Semiconductor devices including compounds such as GaN and AlGaN have many advantages, such as having a wide and easily adjustable band gap energy, and can be used in various ways such as light emitting devices, light receiving devices, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials of semiconductors are developed in thin film growth technology and device materials to produce red, green, Various colors such as blue and ultraviolet can be realized, and white light with high efficiency can be realized by using fluorescent materials or combining colors. It has the advantages of speed, safety, and environmental friendliness. In addition, when light-receiving devices such as photodetectors or solar cells are manufactured using group 3-5 or group 2-6 compound semiconductor materials, photocurrent is generated by absorbing light in various wavelength ranges through the development of device materials. By doing so, it is possible to use light in a wide range of wavelengths from gamma rays to radio wavelengths. In addition, it has the advantages of fast response speed, safety, environmental friendliness, and easy control of element materials, so that it can be easily used in power control or ultra-high frequency circuits or communication modules.

Therefore, a light emitting diode backlight that replaces a cold cathode fluorescence lamp (CCFL) constituting a backlight of a transmission module of an optical communication means, a backlight of a liquid crystal display (LCD) display device, and a white light emission that can replace a fluorescent lamp or an incandescent bulb. Applications are expanding to diode lighting devices, automobile headlamps and traffic lights, and sensors that detect gas or fire. In addition, applications can be extended to high-frequency application circuits, other power control devices, and communication modules.

For example, in relation to a light emitting element used as a car headlamp, advanced driver assistance (ADAS) technology is developing according to the recent development of smart car technology, and one of the ADSA technologies is an adaptive front lighting apparatus (adaptive front lighting apparatus: AFLS) technology.

Adaptive headlamp technology (AFLS) of the prior art is a system that changes the width and length of light emitted from headlamps according to vehicle driving conditions, road conditions, environmental conditions, etc. The angle changes depending on the surrounding situation.

Meanwhile, among the adaptive headlamp technologies, adaptive driving beam (ADB) technology is attracting attention. It is a technique to investigate part by part.

For example, the adaptive driving beam (ADB) technology is constantly irradiated with high beam, and when an oncoming vehicle appears, the driver's field of vision of the oncoming vehicle blocks the light irradiation to prevent the other vehicle from being dazzled, thereby promoting safe driving. It is a skill.

On the other hand, in order to implement the adaptive driving beam (ADB) technology in the prior art, by mounting and manufacturing a plurality of light emitting device packages (PKG), a dark area occurs due to a difference in distance between the light emitting device packages. Therefore, there is a problem in that there is a limit to accurate light irradiation or control.

In addition, in the prior art, a light emitting device provided in a vehicle headlamp has a problem in that electrical reliability is lowered due to a difference in operating voltage between light emitting device packages.

One of the problems of the embodiment is to provide a light emitting device capable of minimizing occurrence of a dark area in a light emitting device used in a lighting device and a lighting device including the same.

In addition, one of the problems of the embodiment is a light emitting device capable of securing a plurality of light emitting regions even in a small size by effectively controlling the distribution of pads and the arrangement of electrodes while having a plurality of light emitting regions in one light emitting device chip, including the same It is intended to provide a lighting device that

Another object of the present invention is to provide a light emitting device having excellent electrical reliability and a lighting device including the same by minimizing the difference in operating voltage between various light emitting regions.

The problems to be solved in the embodiments are not limited to the contents described in this section, and objective technical problems to be solved based on the contents described in the entire description of the invention may be described.

A light emitting device according to an embodiment may include a common electrode 210 providing first conductivity type power and a plurality of light emitting structures disposed on the common electrode 210 .

The plurality of light emitting structures may include a first light emitting structure 110A and a second light emitting structure 110B disposed adjacent to each other in a first axis direction of the first light emitting structure 110A.

The first and second light emitting structures 110A and 110B each include first conductivity type semiconductor layers 112a and 112b, active layers 114a and 114b, and second conductivity type semiconductor layers 116a and 116b, The common electrode 210 electrically passes through the first conductive semiconductor layers 112a and 112b of the first and second light emitting structures 110A and 110B and the first and second via electrodes 216a and 216b, respectively. can be connected

The second conductivity type semiconductor layer 116a of the first light emitting structure 110A includes a first pad 240A disposed adjacently in an opposite direction to the first axis of the first light emitting structure 110A and the common electrode ( 210 may be electrically connected through the first connection electrode 220A penetrating the first insulating layer 310 disposed on the surface.

The second conductivity-type semiconductor layer 116b of the second light emitting structure 110B includes a second pad 240B disposed adjacently in an opposite direction to the first axis of the first light emitting structure 110A and the first insulation. They may be electrically connected through the second connection electrode 220B penetrating the layer 310 .

The first and second connection electrodes 220A and 220B are formed through the first and second electrodes 230A and 230B penetrating the second insulating layer 320 disposed on the first insulating layer 310 . It may be electrically connected to the second conductivity-type semiconductor layers 2016a and 216b of the first and second light emitting structures, respectively.

The second connection electrode 220B and the first electrode 230A may overlap each other vertically.

A lighting device according to an embodiment may include a light emitting unit having the light emitting element.

Embodiments can provide a light emitting element with technical effects capable of accurate and precise lighting control by minimizing the occurrence of dark areas in the light emitting element used in the lighting device, and a lighting device including the same.

In addition, according to the embodiment, a light emitting device capable of securing a plurality of light emitting areas and precisely controlling the light emitting area even in a small size by effectively controlling the distribution of pads and the arrangement of electrodes while having a plurality of light emitting areas in one light emitting device chip, and the same It is possible to provide a lighting device that includes.

In addition, the embodiment can provide a light emitting device having excellent electrical reliability and a technical effect by minimizing the difference in operating voltage between various light emitting regions and a lighting device including the same.

The technical effects of the embodiments are not limited to the contents described in this section, and technical effects through solving technical problems may be described based on the contents of the entire description of the invention.

1 is a plane projection view of a light emitting device according to an embodiment.
2 is a plan view of a first part (P) of a light emitting device according to an embodiment.
3 is a partial enlarged view of a first region G of a first part of a light emitting device according to an embodiment.
4A is a conceptual view of a light emitting structure area of a first area G of a light emitting device according to an embodiment;
Figure 4b is a conceptual view of the pad and electrode of the light emitting device according to the embodiment.
5A is a bottom projection view of a first region G in a light emitting device according to an embodiment.
5B is a cross-sectional view of a light emitting device according to an embodiment taken along line A1-A1′ of FIG. 5A;
5C is a cross-sectional view of a light emitting device according to an embodiment taken along line B1-B1′ of FIG. 5A;
6A is a bottom projection view of a first region G in a light emitting device according to an embodiment.
Figure 6b is a cross-sectional view of the light emitting device according to the embodiment, taken along line C1-C1' of Figure 6a.
Figure 6c is a cross-sectional view taken along the line C2-C2' of Figure 6a in the light emitting device according to the embodiment.
7A is a bottom projection view of a first region G in a light emitting device according to an embodiment;
Figure 7b is a cross-sectional view taken along the line D1-D1' of Figure 7a in the light emitting device according to the embodiment.
7C is a cross-sectional view of a light emitting device according to an embodiment taken along line D2-D2′ of FIG. 7A;
8A is a bottom projection view of a first region G in a light emitting device according to an embodiment.
8B is a cross-sectional view of a light emitting device according to an embodiment taken along line E1-E1′ of FIG. 8A;
8C is a cross-sectional view of a light emitting device according to an embodiment taken along line E2-E2′ of FIG. 8A;
9 is a cross-sectional view of a light emitting device package according to an embodiment;
10 is a perspective view of a vehicle headlamp equipped with a light emitting device according to an embodiment.
11 is a cross-sectional view of the vehicle headlamp in FIG. 10;

Hereinafter, an embodiment will be described with reference to the accompanying drawings. In the description of the embodiment, each layer (film), region, pattern or structure is "on/over" or "under" the substrate, each layer (film), region, pad or pattern. In the case where it is described as being formed in, "on/over" and "under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criterion for the top/top or bottom of each layer is described based on the drawings, but the embodiment is not limited thereto.

Embodiments are described centering on via-hole type vertical light emitting devices, but the embodiments are not limited thereto. The light emitting device of the embodiment may be applied to a horizontal light emitting device and a vertical light emitting device.

(Example)

1 is a plane projection view of a light emitting device 100 according to an embodiment, FIG. 2 is a plan view of a first part (P) of the light emitting device according to the embodiment shown in FIG. 1, and FIG. 3 is an embodiment shown in FIG. This is a partially enlarged view of the first region G of the first portion P of the light emitting device according to the example, and the first region G may include a pad region GP and a light emitting structure region GE.

Referring to FIG. 3 , a light emitting device according to an embodiment may include a plurality of light emitting structures. For example, the light emitting device according to the embodiment may include the first to fifth light emitting structures 110A, 110B, 110C, 110D, and 110E. The first to fifth light emitting structures 110A, 110B, 110C, 110D, and 110E may be electrically connected to the first to fifth pads 240A, 240B, 240C, 240D, and 240E, respectively.

One of the technical problems to be solved by the embodiments is a light emitting device capable of securing a plurality of light emitting regions even in a small size by effectively controlling the distribution of pads and the arrangement of electrodes while having a plurality of light emitting regions in one light emitting device chip, and It is intended to provide a lighting device including this.

The light emitting device 100 shown in FIG. 1 may have a size of about 4 mm in each of the horizontal and vertical directions, and the light emitting structure, which is a light emitting area of 10 light emitting areas, is distributed in each of the horizontal and vertical directions, and a light emitting area of 10X10, for a total of 100 light emitting areas. It is possible to provide a light emitting device equipped with this.

In the prior art, a plurality of light emitting regions in one light emitting element chip has stayed at a level capable of providing a total of less than 10 light emitting regions, such as four light emitting regions of about 2X2 or about nine of about 3X3. In addition to the difficulty in securing the pad distribution area, it was difficult to secure a large number of light emitting areas in order to secure the area of the connection electrodes respectively connected to the light emitting structure.

On the other hand, according to the embodiment, while having a plurality of light emitting areas in one light emitting device chip, it is possible to secure a plurality of light emitting areas capable of accurate and precise lighting control even in a small size by effectively controlling the distribution of pads and the arrangement of electrodes. It is possible to provide an element and a lighting device including the same.

Details of these unique technical effects will be described in detail below.

First, FIG. 4A is a conceptual diagram of a light emitting structure region GE in a first region G of a light emitting device according to an embodiment, and FIG. 4B is a conceptual diagram of pads and electrodes of a light emitting device according to an embodiment. First, the characteristics of the arrangement relationship between the light emitting structure, the pad, and the connection electrode according to the embodiment will be conceptually described.

Referring to FIG. 4B , the light emitting device according to the embodiment may include first to fifth pads 240A, 240B, 240C, 240D, and 240E, and first to fifth connection electrodes electrically connected thereto, respectively. (220A, 220B, 220C, 220D, 220E).

Referring to FIG. 4A, the first to fifth connection electrodes 220A, 220B, 220C, 220D, and 220E are disposed at positions corresponding to regions of the first to fifth light emitting structures 110A, 110B, 110C, 110D, and 110E, respectively. The first to fifth open areas 310A, 310B, 310C, 310D, and 310E, which are open areas of the first insulating layer 310 (see FIG. 5B ), may be electrically connected thereto.

Based on the above information, technical features of the light emitting device according to the embodiment will be described in detail with reference to FIGS. 5A to 5C. Meanwhile, in the following description, an example of five light emitting structures will be described, but the embodiment is not limited thereto.

5A is a bottom projection view of a first region G in a light emitting device according to an embodiment, and FIG. 5B is a cross-sectional view taken along line A1-A1′ of FIG. 5A in a light emitting device according to an embodiment, and FIG. 5C is an exemplary embodiment. A cross-sectional view of the light emitting device according to the example taken along line B1-B1' of FIG. 5A.

Referring to FIG. 5A , a light emitting device according to an embodiment may include a plurality of light emitting structures. For example, the light emitting device according to the embodiment may include the first to fifth light emitting structures 110A, 110B, 110C, 110D, and 110E, and the first to fifth light emitting structures 110A, 110B, 110C, 110D and 110E may be electrically connected to the first to fifth pads 240A, 240B, 240C, 240D, and 240E and the first to fifth connection electrodes 220A, 220B, 220C, 220D, and 220E, respectively.

In the first to fifth open regions 310A, 310B, 310C, 310D, and 310E, which are open regions of the first insulating layer 310 shown in FIG. 4A, the first to fifth connection electrodes 220A, 220B, 220C, 220D and 220E), and the first to fifth connection electrodes 220A, 220B, 220C, 220D, and 220E are surrounded by a first insulating layer 310 to prevent an electrical short. It can be prevented.

Through this, according to the embodiment, while having a plurality of light emitting regions in one light emitting device chip, the bonding area of the connection electrode widens as the distance from the individual pad increases, minimizing the Vf deviation, thereby effectively controlling the distribution of pads and the arrangement of electrodes By doing so, it is possible to provide a light emitting device capable of securing a plurality of light emitting regions capable of accurate and precise lighting control even in a small size and a lighting device including the same.

In addition, according to the embodiment, in a lighting device having a plurality of light emitting areas in a light emitting device chip, by minimizing the distance between light emitting structures, which are light emitting areas, the occurrence of dark areas between light emitting areas is minimized, thereby enabling accurate and precise lighting control. It is possible to provide an effective light emitting device and a lighting device including the same.

Next, referring to FIGS. 5B and 5C, the light emitting device according to the embodiment may include at least one of a plurality of light emitting structures, a common electrode 210, a pad, a connecting electrode, an electrode, a via electrode, and an insulating layer. there is.

For example, the light emitting device according to the embodiment includes first to fifth light emitting structures 110A, 110B, 110C, 110D, and 110E, a common electrode 210 providing a first conductivity type power supply, and first to fifth pads. (240A, 240B, 240C, 240D, 240E), first to fifth connection electrodes (220A, 220B, 220C, 220D, 220E), first to fifth electrodes (230A, 230B, 230C, 230D, 230E), At least one of the first to fifth via electrodes 216a, 216b, 216c, 216d, and 216e and the first and second insulating layers 310 and 320 may be included.

Hereinafter, the technical characteristics of each component of the embodiment will be described in detail.

<Plural Light-Emitting Structures>

An embodiment may include a plurality of light emitting structures. The plurality of light emitting structures may include a first light emitting structure 110A and a second light emitting structure 110B disposed adjacent to each other in the first axis X1 direction of the first light emitting structure 110A. In addition, the light emitting structure includes a third light emitting structure 110C, a fourth light emitting structure 110D, and a fifth light emitting structure 110E continuously disposed in the direction of the first axis X1 of the second light emitting structure 110B. can include more. A plurality of pads may be disposed up and down in the direction of the second axis X2, which is perpendicular to the direction of the first axis X1.

Accordingly, the embodiment may include the first to fifth light emitting structures 110A, 110B, 110C, 110D, and 110E, but is not limited thereto.

The light emitting structure according to the embodiment may be electrically connected to the common electrode 210 in common and disposed in one light emitting device chip, and 36, 64, or 100 light emitting devices, such as 6X6, 8X8, 10X10, etc., are also one light emitting device chip. can be placed within.

For example, when the light emitting device 100 shown in FIG. 1 has a size of about 4 mm in the horizontal and vertical directions, 10 light emitting areas are distributed in each of the horizontal and vertical directions, and a total of 100 light emitting areas or provided light emitting devices are provided. can do.

Through this, according to the embodiment, it is possible to secure a plurality of light emitting areas capable of accurate and precise lighting control even in a small size by effectively controlling the distribution of pads and the arrangement of connection electrodes while having a plurality of light emitting areas in one light emitting device chip. It is possible to provide a light emitting device and a lighting device including the same.

The light emitting structure of the embodiment may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. For example, the first to fifth light emitting structures 110A, 110B, 110C, 110D, and 110E of the embodiment include the first conductivity-type semiconductor layers 112a, 112b, 112c, 112d, and 112e, an active layer for each light emitting structure. (114a, 114b, 114c, 114d, 114e) and second conductive semiconductor layers 116a, 116b, 116c, 116d, and 116e.

Light extraction patterns R are formed on the first to fifth light emitting structures 110A, 110B, 110C, 110D, and 110E of the embodiment, respectively, to improve light extraction efficiency.

In an embodiment, the first conductivity-type semiconductor layers 112a, 112b, 112c, 112d, and 112e are n-type semiconductor layers, and the second conductivity-type semiconductor layers 116a, 116b, 116c, 116d, and 116e are p-type semiconductor layers. may, but is not limited thereto. In addition, a semiconductor having a polarity opposite to that of the first conductivity type, for example, a p-type semiconductor layer (not shown) may be formed on the first conductivity-type semiconductor layers 112a, 112b, 112c, 112d, and 112e. Accordingly, the light emitting structure of the embodiment may be implemented with any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

In an embodiment, the first conductivity-type semiconductor layers 112a, 112b, 112c, 112d, and 112e may be implemented with a semiconductor compound, for example, a compound semiconductor of group 3-5 or group 2-6. A conductive dopant may be doped. For example, when the first conductivity-type semiconductor layers 112a, 112b, 112c, 112d, and 112e are n-type semiconductor layers, they may contain Si, Ge, Sn, Se, or Te as an n-type dopant. Not limited.

The first conductivity-type semiconductor layers 112a, 112b, 112c, 112d, and 112e have In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1 ) may include a semiconductor material having a composition formula. For example, the first conductivity-type semiconductor layers 112a, 112b, 112c, 112d, and 112e may include GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, and AlInGaP. , InP may be formed of any one or more.

Next, in the embodiment, the active layers 114a, 114b, 114c, 114d, and 114e may include a single quantum well structure, a multi quantum well (MQW) structure, a quantum wire structure, or a quantum dot structure. Dot) may be formed of at least one of the structures.

The active layers 114a, 114b, 114c, 114d, and 114e may include a quantum well/quantum wall structure. For example, the active layers 114a, 114b, 114c, 114d, and 114e may include one or more pairs of InGaN/GaN, InGaN/InGaN, GaN/AlGaN, InAlGaN/GaN, GaAs/AlGaAs, InGaP/AlGaP, and GaP/AlGaP. It may be formed into a structure, but is not limited thereto.

Next, the second conductivity-type semiconductor layers 116a, 116b, 116c, 116d, and 116e may be formed of a semiconductor compound. For example, the second conductivity-type semiconductor layers 116a, 116b, 116c, 116d, and 116e may be implemented with compound semiconductors of group 3-5, group 2-6, etc., and the second conductivity-type dopant can be doped.

The second conductivity-type semiconductor layers 116a, 116b, 116c, 116d, and 116e may include a group 3-group 5 compound semiconductor doped with a second conductivity-type dopant, for example, In _x Al _y Ga _{1 -x- y} N (0 ≤x≤1, 0≤y≤1, 0≤x+y≤1) may include a semiconductor material having a composition formula. When the second conductivity-type semiconductor layers 116a, 116b, 116c, 116d, and 116e are p-type semiconductor layers, the second conductivity-type dopant is a p-type dopant and includes Mg, Zn, Ca, Sr, Ba, and the like. can do.

The light emitting structure according to the embodiment may be disposed in one light emitting device chip, and 36, 64, or 100 light emitting structures such as 6X6, 8X8, 10X10, etc. may also be disposed in one light emitting device chip.

Through this, the embodiment effectively controls the distribution of pads and the arrangement of connection electrodes while providing a plurality of light emitting regions in a single light emitting device chip, thereby minimizing the distance between light emitting structures and controlling the size of the light emitting structures to a very small size. By doing so, it is possible to provide a light emitting device capable of securing a plurality of light emitting regions capable of accurate and precise lighting control even in a small size and a lighting device including the same.

<Common electrode>

In the embodiment, a common electrode 210 capable of providing power of a first conductivity type is provided under the light emitting structure, and the first to fifth light emitting structures are provided through via electrodes 216a, 216b, 216c, 216d, and 216e. It may be electrically connected to the first conductivity-type semiconductor layers 112a, 112b, 112c, 112d, and 112e, respectively. The first conductivity type may be n-type, but is not limited thereto.

The common electrode 210 may include at least one of a conductive support member 212, a bonding layer 214, and a metal layer (not shown).

In an embodiment, the metal layer (not shown) may include at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials. The metal layer may also function as a diffusion barrier layer. A bonding layer 214 and a conductive support member 212 may be disposed under the metal layer. The metal layer may perform a function of preventing a material included in the bonding layer 214 from being diffused toward the light emitting structure in the process of providing the bonding layer 214 .

The bonding layer 214 includes a barrier metal or a bonding metal, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta. can include The bonding layer 214 may be implemented as a seed layer.

The conductive support member 212 may support the light emitting structure according to the embodiment and perform a heat dissipation function. The conductive support member 212 may be, for example, Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W or a semiconductor substrate implanted with impurities (eg Si, Ge, GaN, GaAs). , ZnO, SiC, SiGe, etc.).

A plurality of light emitting structures according to the embodiment may be disposed in a single light emitting device chip, and the plurality of light emitting structures may have via electrodes 216a, 216b, 216c, By being electrically connected through 216d and 216e), the distance between the light emitting structures can be controlled to a minimum, and the size of the light emitting element can be implemented in a small size, thereby providing a plurality of light emitting areas capable of accurate and precise lighting control even in a small size. It is possible to provide a light emitting device that can be secured and a lighting device including the same.

<First and second insulating layers>

The embodiment may include first and second insulating layers 310 and 320 between the common electrode 210 and the light emitting structure. The first and second insulating layers 310 and 320 may function to prevent an electrical short between the via electrode and the contact electrode.

In an embodiment, reflectance of the first and second insulating layers 310 and 320 may exceed 50%. For example, the first and second insulating layers 310 320 may be formed of one or more materials selected from SiO _x , SiO ₂ , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ It may be formed in a form in which a reflective material is mixed with such an insulating material.

For example, the first and second insulating layers 310 320 may include any one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, or Hf on one or more of the insulating materials. One or more materials may be formed in a mixed form, and may be formed in a single layer or multiple layers, but is not limited thereto.

According to the embodiment, on the side surfaces of the first to fifth electrodes 230A, 230B, 230C, 230D, and 230E and the first to fifth via electrodes 216a, 216b, 216c, 216d, and 216e serving as electrical contact layers. By disposing the first and second insulating layers 310 and 320 containing a reflective material, unlike the prior art, light absorption by the electrode layers is prevented, thereby providing a plurality of light emitting regions even in a small size and improving light extraction efficiency. can improve the luminous flux.

<Via electrode, first conductivity type contact electrode>

In the embodiment, the common electrode and the first conductivity-type semiconductor layer of the light emitting structure may be electrically connected through the via electrode and the first electrode.

For example, in the embodiment, the first to fifth via electrodes 216a, 216b, 216c, 216d, and 216e pass through the first insulating layer 310 and the second insulating layer 320 to form a common first conductive type. The electrode 210 and the first conductivity-type semiconductor layers 112a, 112b, 112c, 112d, and 112e of the first to fifth light emitting structures may be electrically connected.

The first to fifth via electrodes 216a, 216b, 216c, 216d, and 216e may employ a metal material having excellent electrical conductivity, for example, Ti, Au, Sn, Ni, Cr, Ga, In, It may include at least one of Bi, Cu, Ag, Nb, Pd, or Ta, and may be formed as a single layer or a plurality of layers.

In addition, in the embodiment, the first to fifth via electrodes 216a, 216b, 216c, 216d, and 216e and the first conductive semiconductor layers 112a, 112b, 112c, 112d, and 112e of the first to fifth light emitting structures are respectively It may include first to fifth first conductivity type contact electrodes 218a, 218b, 218c, 218d, and 218e between The first to fifth first conductivity type contact electrodes 218a, 218b, 218c, 218d, and 218e may include a material having excellent ohmic characteristics, such as Cr, V, W, Ti, or Zn. , Ni, Cu, Al, Au, and Mo may include at least one, and may be formed as a single layer or a plurality of layers.

In the embodiment, the third insulating layers 217a, 217b, 217c, 217d, and 217e are provided on one side of the first to fifth first conductivity type contact electrodes 218a, 218b, 218c, 218d, and 218e, and on the other side. The first to fifth via electrodes 216a, 216b, 216c, 216d, 216e and the first to fifth active layers 114a, 114b, 114c, An electrical short between 114d and 114e) can be prevented. The third insulating layers 217a, 217b, 217c, 217d, and 217e or the fourth insulating layers 219a, 219b, 219c, 219d, and 219e are formed of an insulating material such as SiO _x , SiO ₂ , SiO _x N _y , Si Any one or more of ₃ N ₄ may be formed as a single layer or multiple layers.

The embodiment is to provide a light emitting device having a technical effect capable of accurate and precise lighting control by minimizing the occurrence of dark areas between light emitting areas while having a plurality of light emitting areas in one light emitting device chip, and a lighting device including the same. In addition, it is possible to provide a light emitting device capable of securing a plurality of light emitting regions even in a small size by effectively controlling the distribution of pads and the arrangement of via electrodes, and a lighting device including the same.

<electrode>

The embodiment may include an electrode to supply power supplied from a pad to the second conductivity-type semiconductor layer of the light emitting structure. The electrode may include a capping layer, a reflective layer, and a contact electrode.

For example, the light emitting device of the embodiment may include first to fifth electrodes 230A, 230B, 230C, 230D, and 230E. The first to fifth electrodes 230A, 230B, 230C, 230D, and 230E include first to fifth capping layers 231a, 231b, 231c, 231d, and 231e, first to fifth reflective layers 232a, 232b, 232c, 232d, 232e) and first to fifth contact electrodes 233a, 233b, 233c, 233d, and 233e.

The first to fifth contact electrodes 233a, 233b, 233c, 233d, and 233e may be electrically connected to the second conductive semiconductor layers 116a, 116b, 116c, 116d, and 116e of the first to fifth light emitting structures. It may include at least one conductive material, and may be composed of a single layer or multiple layers. The first to fifth contact electrodes 233a, 233b, 233c, 233d, and 233e may make ohmic contact with the second conductive semiconductor layers 116a, 116b, 116c, 116d, and 116e of the first to fifth light emitting structures. It can, but is not limited thereto.

For example, the first to fifth contact electrodes 233a, 233b, 233c, 233d, and 233e may include at least one of metal, metal oxide, and metal nitride materials. The first to fifth contact electrodes 233a, 233b, 233c, 233d, and 233e may include a light-transmitting material. For example, the first to fifth contact electrodes 233a, 233b, 233c, 233d, and 233e may be made of indium tin oxide (ITO), indium zinc oxide (IZO), IZO nitride (IZON), or indium zinc tin oxide (IZTO). , indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, It may include at least one of RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO, Pt, Ni, Au, Rh, or Pd.

The first to fifth reflective layers 232a, 232b, 232c, 232d, and 232e are disposed below the first to fifth ohmic electrodes 233a, 233b, 233c, 233d, and 233e, and Light incident through the contact electrodes 233a, 233b, 233c, 233d, and 233e may be reflected. The first to fifth reflective layers 232a, 232b, 232c, 232d, and 232e include metal, for example, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and It may be formed of one layer or a plurality of layers of materials composed of alloys of two or more of these.

The first to fifth capping layers 231a, 231b, 231c, 231d, and 231e are disposed under the first to fifth reflective layers 232a, 232b, 232c, 232d, and 232e and receive power supplied from pads. It may be supplied to the first to fifth reflective layers 232a, 232b, 232c, 232d, and 232e. The first to fifth capping layers 231a, 231b, 231c, 231d, and 231e may function as current diffusion layers. The first to fifth capping layers 231a, 231b, 231c, 231d, and 231e include metal and are materials having high electrical conductivity, such as Sn, Ga, In, Bi, Cu, Ni, Ag, Mo, It may include at least one of Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Si and optional alloys thereof.

On the other hand, one of the technical problems to be solved by the embodiment is to provide a light emitting device having excellent electrical reliability and a lighting device including the same by minimizing the occurrence of a difference in operating voltage (Vf3) between various light emitting regions.

Referring to the line II' of FIG. 5C, in the embodiment, the first to fifth capping layers 231a, 231b, 231c, 231d, and 231e are the first to fifth light emitting structures 110A, 110B, 110C, 110D, 110E), it is possible to provide a light emitting element having excellent electrical reliability and a lighting device including the same by minimizing the occurrence of a difference in operating voltage Vf3 between a plurality of light emitting regions.

<pad>

The embodiment may include a pad and supply power to the second conductivity type semiconductor layer of the light emitting structure through the connection electrode.

In the embodiment, pads and connection electrodes may be provided to correspond to the number of light emitting structures, and for example, the first to fifth pads 240E and the first to fifth connection electrodes 220A, 220B, 220C, and 220E , 220E).

The first to fifth pads 240E include at least one of metal materials having excellent electrical conductivity, for example, Au, Ag, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo. It can, but is not limited to this.

First, referring to FIG. 5B , the second conductivity-type semiconductor layer 116a of the first light emitting structure 110A is disposed adjacent to each other in the direction opposite to the first axis X1 of the first light emitting structure 110A. may be electrically connected through the first pad 240A and the first connection electrode 220A penetrating the first insulating layer 310 disposed on the common electrode 210 .

Referring to FIG. 5C , the second conductivity-type semiconductor layer 116b of the second light emitting structure 110B is disposed adjacent to the first axis X1 of the first light emitting structure 110A in the opposite direction. The second pad 240B and the second connection electrode 220B penetrating the first insulating layer 310 may be electrically connected to each other.

In the embodiment, the first pad 240A and the second pad 240B are spaced apart from each other, up and down in the direction of the second axis X2 perpendicular to the first axis X1 of the first light emitting structure 110A. It can be arranged so as to overlap between them. Despite the small pad area, the third pad 240C is disposed between the first connection electrode 220A and the second connection electrode 220B connected to the first pad 240A and the second pad 240B, respectively. A plurality of pads may be uniformly disposed.

For example, the third pad 240C is spatially disposed between the first pad 240A and the second pad 240B, and the first pad 240A and the second pad 240B and may not overlap top and bottom.

In addition, the third pad 240C is disposed between the first connection electrode 220A and the second connection electrode 220B respectively connected to the first pad 240A and the second pad 240B, , The first connection electrode 220A and the second connection electrode 220B may be overlapped and disposed between upper and lower sides.

Accordingly, according to the embodiment, it is possible to provide a light emitting device capable of securing a plurality of light emitting regions even in a small size by effectively controlling the distribution of pads while having a plurality of light emitting regions in one light emitting device chip, and a lighting device including the same. there is.

Also, the first pad 240A and the second pad 240B may be disposed so as not to overlap each other vertically with the fourth and fifth pads 240D and 240E in the second axial direction. The fourth pad 240D and the fifth pad 240E are disposed outside the first pad 240A and the fifth pad 240E outside the second pad 240B, so that a plurality of pads are uniformly distributed despite the small pad area. can be placed appropriately.

The fourth pad 240D and the fifth pad 240E do not overlap the first pad 240A and the second pad 240B vertically, but the first connection electrode 220A and the second connection electrode 220A do not overlap each other. The upper and lower electrodes 220B may be disposed overlapping each other.

<Connection electrode>

In the embodiment, power transmitted through the pad may be supplied to the second conductivity-type semiconductor layer of the light emitting structure through the connection electrode.

In the embodiment, the connection electrodes may be provided to correspond to the number of the plurality of light emitting structures, and may include, for example, first to fifth connection electrodes 220A, 220B, 220C, 220E, and 220E.

The connection electrode may be formed in a single layer or multiple layers. For example, the connection electrode may be formed of a metal layer, a connection wire, or a contact layer.

For example, the first to fifth connection electrodes 220A, 220B, 220C, 220E, and 220E may include the first to fifth metal layers 221a, 221b, 221c, 221d, and 221e, and the first to fifth connection wires 222a. , 222b, 222c, 222d, 222e), and the first to fifth contact layers 223a, 223b, 223c, 223d, and 223e.

The first to fifth metal layers 221a, 221b, 221c, 221d, and 221e may include at least one of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo. there is. The first to fifth connection wires 222a, 222b, 222c, 222d, and 222e may include at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo, , it may also perform the function of a diffusion barrier layer. The first to fifth contact layers 223a, 223b, 223c, 223d, and 223e may include at least one of Ni, Ti, Pt, V, Fe, Mo, Ti-W, Cr, and W materials.

First, referring to FIG. 5B , the second conductivity-type semiconductor layer 116a of the first light emitting structure 110A is disposed adjacent to each other in the direction opposite to the first axis X1 of the first light emitting structure 110A. may be electrically connected through the first pad 240A and the first connection electrode 220A penetrating the first insulating layer 310 disposed on the common electrode 210 .

For example, the first connection electrode 220A includes a first metal layer 221a, a first connection wire 222a, and a first contact layer 223a, and the first metal layer 221a is a first pad. 240A, the first connection wire 222a penetrates the first insulating layer 310 and is disposed between the first metal layer 221a and the first contact layer 223a, and the first contact layer 222a (223a) may contact the bottom surface of the first electrode (230A).

Meanwhile, referring to FIGS. 5A and 5B , the fifth connection electrode 220E of the embodiment may include a fifth connection wire 222e and a fifth contact layer 223e, and the fifth via electrode 216e may include 5 Penetrates through the connection electrode 220E and is electrically connected to the fifth contact electrode 218e, so that even a small-sized light emitting element has a plurality of light emitting regions, and pads and connection electrodes electrically connected to each light emitting structure, By optimizing the arrangement of the via electrodes in a three-dimensional space, it is possible to provide a light emitting device capable of securing a plurality of light emitting areas and precisely controlling the light emitting areas even in a small size, and a lighting device including the same.

Referring to FIGS. 5A and 5C , the cross-sectional area of the second connection electrode 220B may be larger than that of the first connection electrode 220A. In particular, the second connection electrode 220B may be disposed to overlap the first electrode 230A vertically in the area of the first light emitting structure 110A, and the first via electrode 216a is the second connection electrode ( 220B) to electrically connect the common electrode 210 and the first electrode 230A. Accordingly, the second connection electrode 220B may surround the first via electrode 216a and the first insulating layer 310 may be interposed therebetween.

In the embodiment, the second connection electrode 220B has a side extension in an area overlapping the first light emitting structure area so that the first via electrode 216a can pass through the second connection electrode 220B. By doing so, unlike the prior art, a three-dimensional space arrangement in which the first via electrode 216a penetrates the second connection electrode 220B is possible, thereby securing a plurality of light emitting areas even in a small size and enabling precise control of the light emitting area. And it can provide a lighting device including this.

Referring to FIG. 5A again, the cross-sectional area of the third connection electrode 220C is formed larger than that of the second connection electrode 220B, thereby preventing the operating voltage from increasing as the distance from the pad increases, thereby providing uniformity. Since a single operating voltage can be implemented, a light emitting device having excellent electrical reliability can be implemented. In addition, the cross-sectional area of the fourth connection electrode 220D may be larger than that of the third connection electrode 220C, and the cross-sectional area of the fifth connection electrode 220E may also be that of the fourth connection electrode 220D. Since it is formed larger than the cross-sectional area, a uniform operating voltage can be realized, and electrical reliability can be improved.

Through this, according to the embodiment, while having a plurality of light emitting regions in one light emitting device chip, the bonding area of the connection electrode widens as the distance from the individual pad increases, minimizing the Vf deviation, thereby effectively controlling the distribution of pads and the arrangement of electrodes By doing so, it is possible to provide a light emitting device capable of securing a plurality of light emitting regions capable of accurate and precise lighting control even in a small size and a lighting device including the same.

Specifically, referring to FIG. 5A , the first to fifth connection electrodes 220A, 220B, 220C, 220D, and 220E are connected to the first to fifth pads 240A, 240B, 240C, 240D, and 240E, respectively. The first to fifth connection electrodes 220A, 220B, 220C, 220D, and 220E electrically contact the first to fifth electrodes 230A, 230B, 230C, 230D, and 230E, respectively, and the first to fifth connection electrodes The electrodes 220A, 220B, 220C, 220D, and 220E have first to fifth contact areas 220AS, 220BS, 220CS, 220DS, contacting the first to fifth electrodes 230A, 230B, 230C, 230D, and 230E, respectively. 220ES) may be included.

At this time, the first to fifth contact areas 220AS, 220BS, 220CS, 220DS, and 220ES are formed wider as they are farther away from the first to fifth pads 240A, 240B, 240C, 240D, and 240E. The first to fifth resistors (R1, R2, It is possible to provide a light emitting device capable of securing a plurality of light emitting regions capable of accurate and precise lighting control even in a small size by uniformly controlling the values of R3, R4, and R5) and minimizing the Vf deviation, and a lighting device including the same. .

In the embodiment, the first to fifth connection electrodes 220A, 220B, 220C, 220D, 220E and the first to fifth electrodes (220AS, 220BS, 220CS, 220DS, 220ES) are controlled through the first to fifth contact areas 230A, 230B), 230C, 230D, 230E), the values of the first to fifth resistors (R1, R2, R3, R4, R5) may be uniformly controlled.

For example, in the embodiment, the first contact area 220AS of the first electrode 230A corresponding to the first to fifth light emitting structures 110A, 110B, 110C, 110D, and 110E that are each light emitting cell is S. In this case, the second contact area 220BS on the second electrode 230B may be about 2S to 3S, and the third contact area 220CS on the third electrode 230C may be about 4S to 5S, The fourth contact area 220DS on the fourth electrode 230D may be about 6S to 7S, and the fifth contact area 220ES on the fifth electrode 230E may be about 8S to 9S.

Through this, as the distance from the first to fifth pads 240A, 240B, 240C, 240D, and 240E increases, the first to fifth contact areas 220AS, 220BS, 220CS, 220DS, and 220ES are formed wider, so that Vf variance can be minimized.

In the embodiment, the horizontal cross-sectional area of the second connection electrode 220B itself is wider than the horizontal cross-sectional area of the first connection electrode 220A, so that the second resistance R2 in the second connection electrode 220B is controlled to be relatively low. Therefore, even if the second contact area 220BS is not formed to be twice or more than the first contact area 220AS, the resistance can be maintained uniformly.

Next, referring to FIGS. 5A and 5C, the fourth connection electrode 220D of the embodiment may include a fourth connection wire 222d and a fourth contact layer 223d, and the fourth via electrode 216d may include By penetrating the four connection electrodes 220D and electrically connected to the fourth contact electrode 218d, even a small-sized light emitting element has a plurality of light emitting regions, and pads and connection electrodes electrically connected to each light emitting structure, By optimizing the arrangement of the via electrodes in a three-dimensional space, it is possible to provide a light emitting device capable of securing a plurality of light emitting areas and precisely controlling the light emitting areas even in a small size, and a lighting device including the same.

Next, FIG. 6A is a bottom projection view of the first region G in the light emitting device according to the embodiment, and FIG. 6B is a cross-sectional view taken along line C1-C1′ of FIG. 6A in the light emitting device according to the embodiment. 6c is a cross-sectional view of the light emitting device according to the embodiment taken along the line C2-C2′ of FIG. 6a.

Referring to FIGS. 6A, 6B, and 6C, the third connection electrode 220C of the embodiment may include a third metal layer 221c, a third connection wire 222c, and a third contact layer 223c. Since the 3-via electrode 216c passes through the third connection electrode 220C and is electrically connected to the third contact electrode 218c, a plurality of light emitting regions are provided even in a small-sized light emitting device, and each light emitting structure is electrically connected. It is possible to provide a light emitting element capable of securing a plurality of light emitting areas and precisely controlling the light emitting area even in a small size and a lighting device including the same by optimally utilizing the arrangement of the connected pads, connecting electrodes, and via electrodes in a three-dimensional space. .

In addition, in the embodiment, the third connection electrode 220C is a connection electrode optimally utilized in a three-dimensional space by enabling electrode arrangement to overlap the first electrode 230A and the second electrode 230B disposed in another light emitting area. By realizing the arrangement, it is possible to provide a light emitting device capable of securing a plurality of light emitting areas and precisely controlling the light emitting areas even in a small size, and a lighting device including the same.

Also, referring to 6a, the cross-sectional area of the third connection electrode 220C is formed larger than the cross-sectional area of the second connection electrode 220B, thereby preventing the operating voltage from increasing as the distance from the pad increases, thereby providing uniform Since an operating voltage can be implemented, a light emitting device having excellent electrical reliability can be implemented.

Next, FIG. 7A is a bottom projection view of the first region G in the light emitting device according to the embodiment, and FIG. 7B is a cross-sectional view taken along line D1-D1′ of FIG. 7A in the light emitting device according to the embodiment. 7c is a cross-sectional view of the light emitting device according to the embodiment taken along the line D2-D2′ of FIG. 7a.

Referring to FIGS. 7A, 7B, and 7C , the fourth connection electrode 220D according to the embodiment may include a fourth metal layer 221d, a fourth connection wire 222d, and a fourth contact layer 223d.

In the embodiment, the fourth via electrode 216d passes through the fourth connection electrode 220D and is electrically connected to the fourth contact electrode 218d, so that even a small-sized light emitting device has a plurality of light emitting areas and each light emitting A light emitting device capable of securing multiple light emitting areas and precisely controlling the light emitting area even in a small size by optimally utilizing the arrangement of pads, connecting electrodes, and via electrodes electrically connected to the structure in a three-dimensional space, and a lighting device including the same can provide

In addition, in the embodiment, the fourth connection electrode 220D can be disposed vertically overlapping the first electrode 230A, the second electrode 230B, and the third electrode 230C disposed in other light emitting areas, thereby providing a three-dimensional effect. By realizing the spatially optimally utilized connection electrode arrangement, it is possible to provide a light emitting device capable of securing a plurality of light emitting areas and precisely controlling the light emitting areas even in a small size, and a lighting device including the same.

Also, referring to FIG. 7a, since the cross-sectional area of the fourth connection electrode 220D is larger than that of the second connection electrode 220B and the third connection electrode 220C, the operating voltage increases as the distance from the pad increases. By preventing this increase, a uniform operating voltage can be implemented, and thus a light emitting device having excellent electrical reliability can be implemented.

Next, FIG. 8A is a bottom projection view of the first region G in the light emitting device according to the embodiment, and FIG. 8B is a cross-sectional view taken along line E1-E1′ of FIG. 8A in the light emitting device according to the embodiment. 8c is a cross-sectional view of the light emitting device according to the embodiment taken along the line E2-E2′ of FIG. 8a.

Referring to FIGS. 8A, 8B, and 8C, the fifth connection electrode 220E of the embodiment may include a fifth metal layer 221e, a fifth connection wire 222e, and a fifth contact layer 223e.

In the embodiment, the fifth connection electrode 220E is an electrode that is vertically overlapped with the first electrode 230A, the second electrode 230B, the third electrode 230C, and the fourth electrode 230D disposed in other light emitting areas. It is possible to provide a light emitting element capable of securing a plurality of light emitting areas and precisely controlling the light emitting area even in a small size by realizing an arrangement of connection electrodes optimally utilized in a three-dimensional space and a lighting device including the same.

In addition, in the embodiment, the fifth via electrode 216e passes through the fifth connection electrode 220E and is electrically connected to the fifth contact electrode 218e, so that even a small-sized light emitting device has a plurality of light emitting regions, and each A light emitting device capable of securing multiple light emitting areas and precisely controlling the light emitting area even in a small size by optimally utilizing the arrangement of pads, connection electrodes, and via electrodes electrically connected to the light emitting structure in a three-dimensional space, and a lighting device including the same can provide.

Also, referring to FIG. 8a, the cross-sectional area of the fifth connection electrode 220E is larger than the cross-sectional areas of the second connection electrode 220B, the third connection electrode 220C, and the fourth connection electrode 220D. It is possible to implement a uniform operating voltage by preventing an operating voltage from increasing as the distance increases, thereby implementing a light emitting device having excellent electrical reliability.

Embodiments can provide a light emitting element with technical effects capable of accurate and precise lighting control by minimizing the occurrence of dark areas in the light emitting element used in the lighting device, and a lighting device including the same.

In addition, according to the embodiment, a light emitting device capable of securing a plurality of light emitting areas and precisely controlling the light emitting area even in a small size by effectively controlling the distribution of pads and the arrangement of electrodes while having a plurality of light emitting areas in one light emitting device chip, and the same It is possible to provide a lighting device that includes.

In addition, the embodiment can provide a light emitting device having excellent electrical reliability and a technical effect by minimizing the difference in operating voltage between various light emitting regions and a lighting device including the same.

The technical effects of the embodiments are not limited to the contents described in this section, and technical effects through solving technical problems may be described based on the contents of the entire description of the invention.

<Light emitting device package>

9 is a cross-sectional view illustrating a semiconductor device package including a semiconductor device according to an exemplary embodiment.

The semiconductor device package 400 includes a package body 405, a third electrode layer 413 and a fourth electrode layer 414 disposed on the package body 405, and on the package body 405. A semiconductor element 100 disposed and electrically connected to the third electrode layer 413 and the fourth electrode layer 414 and a molding member 430 surrounding the semiconductor element 100 are included. Here, the semiconductor device may include the light emitting device according to the first embodiment.

The package body 305 may be formed of silicon, synthetic resin, or metal, and an inclined surface may be formed on the main surface of the semiconductor device 100 .

The third electrode layer 413 and the fourth electrode layer 414 are electrically separated from each other and serve to provide power to the semiconductor device 100 . In addition, the third electrode layer 413 and the fourth electrode layer 414 may serve to increase light efficiency by reflecting light generated from the semiconductor device 100, and It can also play a role in dissipating heat to the outside.

The semiconductor device 100 may be disposed on the package body 405 or disposed on the third electrode layer 413 or the fourth electrode layer 414 .

The semiconductor device 100 may be electrically connected to the third electrode layer 413 and/or the fourth electrode layer 414 by any one of a wire method, a flip chip method, and a die bonding method. In the embodiment, it is illustrated that the semiconductor element 100 is electrically connected to the third electrode layer 413 through a wire W, but is not limited thereto.

The molding member 430 may protect the semiconductor device 100 by surrounding the semiconductor device 100 . In addition, the molding member 430 includes a phosphor 432 to change the wavelength of light emitted from the semiconductor device 100 .

The above-described semiconductor device is configured as a semiconductor device package and may be used as a light source of a lighting system, for example, a vehicle lamp including a head lamp or a rear lamp of a vehicle.

<Vehicle headlamp>

FIG. 10 is a perspective view of a vehicle headlamp equipped with a semiconductor device according to an embodiment, and FIG. 11 is a cross-sectional view of the vehicle headlamp of FIG. 10 . Here, a car headlamp is described as an example, but it may also be applied to a car rear lamp.

As shown in FIG. 10, a headlamp for a vehicle basically includes a light housing (H) and a lighting unit 1000 generating a surface light source. The light housing H accommodates the lighting unit 1000 and may be made of a translucent material. The light housing H for a vehicle may include curves depending on a part of the vehicle to be mounted and a design.

As shown in FIG. 11 , the lighting unit 1000 may have a structure in which a semiconductor device package 1300 according to the embodiment is mounted on a substrate 1100 . The substrate 1100 may be a printed circuit board having a circuit pattern formed on one surface. The substrate 1100 may be formed of a rigid or flexible material.

A light guide member 1400 may be disposed on the semiconductor device package 1300 . The light guide member 1400 may be stacked in a structure in which the semiconductor device package 1300 is buried. The light guide member 1400 may be formed to be in close contact with the light guide member 1400 on the outer surface of the semiconductor device package 1300 .

The light guide member 1400 may include a resin layer. The resin layer may be formed of a highly heat-resistant UV-curable resin including an oligomer. Urethane Acrylate may be used as the UV curing resin, but is not limited thereto, and in addition, Epoxy Acrylate, Polyester Acrylate, Polyether Acrylate, Polyether Acrylate At least one of butadiene acrylate and silicon acrylate may be used.

In particular, when urethane acrylate is used as an oligomer, different physical properties can be simultaneously implemented by mixing and using two types of urethane acrylate.

The resin layer may further include at least one of a monomer and a photo initiator. Also, the resin layer may be made of a thermosetting resin having high heat resistance. Specifically, the resin layer may be made of a thermosetting resin containing at least one of a polyester polyol resin, an acrylic polyol resin, a hydrocarbon-based solvent, and/or an ester-based solvent. The thermosetting resin may further include a thermosetting agent to improve the strength of the coating film.

The refractive index of the resin layer may be determined in the range of 1.4 to 1.8, but is not limited thereto.

A reflective member 1200 may be further included between the substrate 1100 and the light guide member 1400 . The reflective member 1200 is formed on the upper surface of the substrate 1100 and has a structure in which the semiconductor device package 1300 is inserted. The reflective member 1200 of this embodiment serves to reduce light loss by reflecting light emitted from the light emitting unit 130 upward by being formed of a material with high reflective efficiency.

The reflective member 1200 may be formed in the form of a film. A reflective pattern may be formed on the surface of the reflective member 1200, and the reflective pattern serves to uniformly transmit light to the upper portion by scattering and scattering incident light. Formation of the reflective pattern may be performed by printing on the surface of the reflective member 1200 using a reflective ink containing any one of TiO 2 , CaCo 3 , BaSo 4 , Al 2 O 3 , Silicon and PS, but is not limited thereto.

When the semiconductor device package 1300 is embedded in the light guide member 1400, the structure is simplified. In addition, the light efficiency of the semiconductor device package 1300 may be improved because the amount of light is increased due to the light guide member 1400 compared to the case where the light is emitted directly into the air.

An optical member 1500 may be disposed above the light guide member 1400 .

The optical member 1500 may use an inner lens type member having an optical pattern on its surface. The optical member 1500 increases the light efficiency due to the increase in the transmittance of the lens itself, and can implement design effects not only when the vehicle lighting is turned on but also when the vehicle lighting is not turned on through the optical pattern 1500b.

The optical member 1500 and the light guide member 1400 may be spaced apart at regular intervals. When light emitted from the semiconductor device package 1300 is induced and diffused through the light guide member 1400 to emit surface light upward, light scattering due to the existence of an air layer in the spaced portion having a refractive index different from that of the light guide member 1400 It is possible to increase the effect, and accordingly, it is possible to increase the uniformity of light. As a result, it has an effect of improving the uniformity of light emitted from the optical member 150 and an effect of realizing uniform light emission.

The optical member 1500 may be formed in a structure in which an embossed or intaglio optical pattern 1500b having a directivity is implemented on a surface of a transparent lens member 1500a having good light transmittance.

In addition, the above-described semiconductor device is configured as a semiconductor device package and may be used as a light source of an image display device or a light source of a lighting device.

When used as a backlight unit of an image display device, it can be used as an edge-type backlight unit or a direct-type backlight unit, and when used as a light source for a lighting device, it can be used as a lamp or bulb type, and can also be used as a light source for mobile terminals. may be

Semiconductor devices include laser diodes in addition to the light emitting diodes described above.

Like a semiconductor device, a laser diode may include a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer having the above structure. In addition, an electro-luminescence phenomenon in which light is emitted when a current is passed after bonding a p-type first conductivity type semiconductor and an n-type second conductivity type semiconductor is used, but the directionality of the emitted light There is a difference between and phase. That is, a laser diode can emit light having a specific wavelength (monochromatic beam) with the same phase and in the same direction by using a phenomenon called stimulated emission and a constructive interference phenomenon. Due to this, it can be used for optical communication, medical equipment, and semiconductor processing equipment.

A photodetector, which is a type of transducer that detects light and converts its intensity into an electrical signal, may be exemplified as the light receiving element. As such photodetectors, photocells (silicon, selenium), photoconductive devices (cadmium sulfide, cadmium selenide), photodiodes (e.g., PDs having peak wavelengths in the visible blind spectral region or true blind spectral region), phototransistors , photomultiplier tube, photoelectric tube (vacuum, gas filled), IR (Infra-Red) detector, etc., but the embodiment is not limited thereto.

In addition, a semiconductor device such as a photodetector may be fabricated using a direct bandgap semiconductor having excellent light conversion efficiency. Alternatively, photodetectors have various structures, and the most common structures include a pin type photodetector using a p-n junction, a Schottky type photodetector using a Schottky junction, and a Metal Semiconductor Metal (MSM) type photodetector. there is.

Like a light emitting device, a photodiode may include a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer having the above-described structure, and has a pn junction or pin structure. The photodiode operates by applying reverse bias or zero bias, and when light is incident on the photodiode, electrons and holes are generated and current flows. In this case, the size of the current may be substantially proportional to the intensity of light incident on the photodiode.

A photovoltaic cell or solar cell is a type of photodiode and can convert light into electric current. A solar cell, like a light emitting device, may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer having the above structure.

In addition, it can be used as a rectifier of an electronic circuit through the rectification characteristics of a general diode using a p-n junction, and can be applied to an oscillation circuit by being applied to a microwave circuit.

In addition, the above-described semiconductor device is not necessarily implemented as a semiconductor and may further include a metal material in some cases. For example, a semiconductor device such as a light receiving device may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, and may be implemented using a p-type or n-type dopant. It may be implemented using a doped semiconductor material or an intrinsic semiconductor material. Although the above has been described with reference to the embodiments, this is only an example and does not limit the present invention, and those skilled in the art to which the present invention belongs will not deviate from the essential characteristics of the present embodiment. It will be appreciated that various variations and applications are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the present invention as defined in the appended claims.

a common electrode 210;
The first to fifth light emitting structures 110A, 110B, 110C, 110D, and 110E,
first to fifth via electrodes 216a, 216b, 216c, 216d, and 216e;
the first to fifth pads 240A, 240B, 240C, 240D, and 240E, the first and second insulating layers 310 and 320;
First to fifth connection electrodes 220A, 220B, 220C, 220D, 220E

Claims (16)

a common electrode providing a first conductivity-type power source;
A plurality of light emitting structures disposed on the common electrode; includes,
The plurality of light emitting structures include a first light emitting structure and a second light emitting structure disposed adjacent to each other in a first axis direction of the first light emitting structure,
The first and second light emitting structures,
Each includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer,
The common electrode is electrically connected to the first conductive semiconductor layer of the first and second light emitting structures through first and second via electrodes, respectively;
The second conductivity-type semiconductor layer of the first light emitting structure has a first pad passing through a first insulating layer disposed on the common electrode and a first pad disposed adjacently in a direction opposite to the first axis of the first light emitting structure. It is electrically connected through the connecting electrode,
The second conductivity type semiconductor layer of the second light emitting structure is electrically connected through a second pad disposed adjacent to the first axis of the first light emitting structure and a second connection electrode penetrating the first insulating layer. connected,
The first and second connection electrodes connect to the second conductive semiconductor layer of the first and second light emitting structures through the first and second electrodes penetrating the second insulating layer disposed on the first insulating layer. electrically connected to each other,
The second connection electrode and the first electrode overlap each other vertically.
According to claim 1,
The first via electrode,
A light emitting element electrically connected to the common electrode and the first electrode through the second connection electrode.
According to claim 1,
The second connection electrode surrounds the first via electrode and the first insulating layer is interposed therebetween.
According to claim 1,
The cross-sectional area of the second connection electrode is
A large light emitting device compared to the cross-sectional area of the first connection electrode.
According to claim 1,
The light emitting structure
Further comprising a third light emitting structure, a fourth light emitting structure, and a fifth light emitting structure continuously disposed in the first axis direction of the second light emitting structure,
The third light emitting structure is electrically connected to a third pad disposed in a direction opposite to a first axis of the first light emitting structure through a third connection electrode penetrating the first insulating layer,
The fourth light emitting structure is electrically connected to a fourth pad disposed in a direction opposite to a first axis of the first light emitting structure through a fourth connection electrode penetrating the first insulating layer,
The fifth light emitting structure is electrically connected to a fifth pad disposed in a direction opposite to a first axis of the first light emitting structure through a fifth connection electrode penetrating the first insulating layer.
According to claim 5,
The common electrode is
A light emitting device electrically connected to the first conductivity-type semiconductor layer of the third, fourth, and fifth light emitting structures through third, fourth, and fifth via electrodes, respectively.
According to claim 6,
The third, fourth, and fifth via electrodes,
A light emitting device electrically connected to the common electrode and the first conductivity-type semiconductor layer of the third, fourth, and fifth light emitting structures, respectively, through portions of the third, fourth, and fifth connection electrodes, respectively.
According to claim 7,
The cross-sectional area of the third connection electrode is
A light emitting element having a larger cross-sectional area than the second connection electrode.
According to claim 7,
The cross-sectional area of the fourth connection electrode is
A light emitting device having a larger cross-sectional area than the third connection electrode.
According to claim 7,
The cross-sectional area of the fifth connection electrode is
A light emitting device having a larger cross-sectional area than the fourth connection electrode.
According to claim 7,
The first to fifth contact areas of the first to fifth connection electrodes are formed to be wider as the distance from the first to fifth pads increases.
According to claim 5,
The first pad and the second pad are disposed to overlap each other vertically in a second axis direction perpendicular to the first axis of the first light emitting structure.
According to claim 5,
The first pad and the third, fourth, and fifth pads are arranged so as not to overlap each other vertically in a second axis direction perpendicular to the first axis of the first light emitting structure.
According to claim 5,
The third pad is spatially disposed between the first pad and the second pad, and does not overlap the first pad and the second pad vertically,
The third pad is disposed between the first connection electrode and the second connection electrode connected to the first pad and the second pad, respectively, and overlaps the first connection electrode and the second connection electrode vertically. A light emitting element arranged in such a way.
According to claim 5,
The fourth pad and the fifth pad are
The first pad and the second pad do not overlap each other vertically, but the first connection electrode and the second connection electrode are overlapped with each other.
A lighting device comprising a light emitting unit having the light emitting device of any one of claims 1 to 15.

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